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Ahmad E. Islam, Ph.D. - Publications

Affiliations: 
2010 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering
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31 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Kim SS, Xing L, Islam AE, Hsiao MS, Ngo YH, Pavlyuk O, Martineau R, Hampton C, Crasto C, Slocik JM, Kadakia MP, Hagen J, Kelley-Loughnane N, Naik RR, Drummy LF. In operando observation of neuropeptide capture and release on graphene FET biosensors with picomolar sensitivity. Acs Applied Materials & Interfaces. PMID 30884221 DOI: 10.1021/Acsami.8B20498  0.302
2019 Islam AE, Mahapatra S, Deora S, Maheta VD, Alam MA. Essential aspects of Negative Bias Temperature Instability (NBTI) Ecs Transactions. 35: 145-174. DOI: 10.1149/1.3572281  0.465
2019 Rao R, Islam AE, Singh S, Berry R, Kawakami RK, Maruyama B, Katoch J. Spectroscopic evaluation of charge-transfer doping and strain in graphene/ MoS2 heterostructures Physical Review B. 99. DOI: 10.1103/Physrevb.99.195401  0.303
2016 Jiang J, Pachter R, Demeritte T, Ray PC, Islam AE, Maruyama B, Boeckl JJ. Modeling Graphene with Nanoholes: Structure and Characterization by Raman Spectroscopy with Consideration for Electron Transport Journal of Physical Chemistry C. 120: 5371-5383. DOI: 10.1021/Acs.Jpcc.5B10225  0.326
2016 Jiang J, Pachter R, Islam AE, Maruyama B, Boeckl JJ. Defect-induced Raman spectroscopy in single-layer graphene with boron and nitrogen substitutional defects by theoretical investigation Chemical Physics Letters. 663: 79-83. DOI: 10.1016/J.Cplett.2016.09.067  0.317
2016 Islam AE, Goel N, Mahapatra S, Alam MA. Reaction-Diffusion model Springer Series in Advanced Microelectronics. 139: 181-207. DOI: 10.1007/978-81-322-2508-9_5  0.397
2015 Islam AE, Rogers JA, Alam MA. Recent Progress in Obtaining Semiconducting Single-Walled Carbon Nanotubes for Transistor Applications. Advanced Materials (Deerfield Beach, Fla.). PMID 26540144 DOI: 10.1002/Adma.201502918  0.527
2015 Xie X, Wahab MA, Li Y, Islam AE, Tomic B, Huang J, Burns B, Seabron E, Dunham SN, Du F, Lin J, Wilson WL, Song J, Huang Y, Alam MA, et al. Direct current injection and thermocapillary flow for purification of aligned arrays of single-walled carbon nanotubes Journal of Applied Physics. 117: 134303. DOI: 10.1063/1.4916537  0.514
2015 Jiang J, Pachter R, Mehmood F, Islam AE, Maruyama B, Boeckl JJ. A Raman spectroscopy signature for characterizing defective single-layer graphene: Defect-induced I(D)/I(D') intensity ratio by theoretical analysis Carbon. 90: 53-62. DOI: 10.1016/J.Carbon.2015.03.049  0.313
2014 Du F, Felts JR, Xie X, Song J, Li Y, Rosenberger MR, Islam AE, Jin SH, Dunham SN, Zhang C, Wilson WL, Huang Y, King WP, Rogers JA. Laser-induced nanoscale thermocapillary flow for purification of aligned arrays of single-walled carbon nanotubes. Acs Nano. 8: 12641-9. PMID 25495504 DOI: 10.1021/Nn505566R  0.341
2014 Xie X, Jin SH, Wahab MA, Islam AE, Zhang C, Du F, Seabron E, Lu T, Dunham SN, Cheong HI, Tu YC, Guo Z, Chung HU, Li Y, Liu Y, et al. Microwave purification of large-area horizontally aligned arrays of single-walled carbon nanotubes. Nature Communications. 5: 5332. PMID 25387684 DOI: 10.1038/Ncomms6332  0.513
2013 Jin SH, Dunham SN, Song J, Xie X, Kim JH, Lu C, Islam A, Du F, Kim J, Felts J, Li Y, Xiong F, Wahab MA, Menon M, Cho E, et al. Using nanoscale thermocapillary flows to create arrays of purely semiconducting single-walled carbon nanotubes. Nature Nanotechnology. 8: 347-55. PMID 23624697 DOI: 10.1038/Nnano.2013.56  0.543
2013 Wahab MA, Jin SH, Islam AE, Kim J, Kim JH, Yeo WH, Lee DJ, Chung HU, Rogers JA, Alam MA. Electrostatic dimension of aligned-array carbon nanotube field-effect transistors. Acs Nano. 7: 1299-308. PMID 23320505 DOI: 10.1021/Nn304794W  0.558
2013 Mahapatra S, Goel N, Desai S, Gupta S, Jose B, Mukhopadhyay S, Joshi K, Jain A, Islam AE, Alam MA. A comparative study of different physics-based NBTI models Ieee Transactions On Electron Devices. 60: 901-916. DOI: 10.1109/Ted.2013.2238237  0.584
2012 Xie X, Grosse KL, Song J, Lu C, Dunham S, Du F, Islam AE, Li Y, Zhang Y, Pop E, Huang Y, King WP, Rogers JA. Quantitative thermal imaging of single-walled carbon nanotube devices by scanning Joule expansion microscopy. Acs Nano. 6: 10267-75. PMID 23061768 DOI: 10.1021/Nn304083A  0.388
2012 Xie X, Islam AE, Wahab MA, Ye L, Ho X, Alam MA, Rogers JA. Electroluminescence in aligned arrays of single-wall carbon nanotubes with asymmetric contacts. Acs Nano. 6: 7981-8. PMID 22866943 DOI: 10.1021/Nn3025496  0.539
2012 Jain A, Islam AE, Alam MA. On the electro-mechanical reliability of NEMFET as an analog/digital switch Ieee International Reliability Physics Symposium Proceedings. DOI: 10.1109/IRPS.2012.6241915  0.302
2012 Islam AE, Du F, Ho X, Hun Jin S, Dunham S, Rogers JA. Effect of variations in diameter and density on the statistics of aligned array carbon-nanotube field effect transistors Journal of Applied Physics. 111. DOI: 10.1063/1.3692048  0.383
2012 Jin SH, Islam AE, Kim T, Kim J, Alam MA, Rogers JA. Sources of Hysteresis in Carbon Nanotube Field-Effect Transistors and Their Elimination Via Methylsiloxane Encapsulants and Optimized Growth Procedures Advanced Functional Materials. 22: 2276-2284. DOI: 10.1002/Adfm.201102814  0.579
2011 Satter MM, Islam AE, Varghese D, Alam MA, Haque A. A self-consistent algorithm to extract interface trap states of MOS devices on alternative high-mobility substrates Solid-State Electronics. 56: 141-147. DOI: 10.1016/J.Sse.2010.10.017  0.69
2011 Islam AE, Alam MA. Analyzing the distribution of threshold voltage degradation in nanoscale transistors by using reaction-diffusion and percolation theory Journal of Computational Electronics. 10: 341-351. DOI: 10.1007/S10825-011-0369-4  0.548
2010 Jain A, Islam AE, Alam MA. A theoretical study of negative bias temperature instability in p-type NEMFET Biennial University/Government/Industry Microelectronics Symposium - Proceedings. DOI: 10.1109/UGIM.2010.5508940  0.525
2010 Islam AE, Alam MA. Mobility enhancement due to charge trapping & defect generation: Physics of self-compensated BTI Ieee International Reliability Physics Symposium Proceedings. 65-72. DOI: 10.1109/IRPS.2010.5488853  0.529
2009 Mahapatra S, Maheta VD, Islam AE, Alam MA. Isolation of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO p-MOSFETs Ieee Transactions On Electron Devices. 56: 236-242. DOI: 10.1109/Ted.2008.2010569  0.591
2009 Deora S, Maheta VD, Islam AE, Alam MA, Mahapatra S. A Common Framework of NBTI Generation and Recovery in Plasma-Nitrided SiON p-MOSFETs Ieee Electron Device Letters. 30: 978-980. DOI: 10.1109/Led.2009.2026436  0.567
2009 Islam AE, Alam MA. Self-compensating the effect of defect generation in advanced CMOS substrates Ieee International Integrated Reliability Workshop Final Report. 97-101. DOI: 10.1109/IRWS.2009.5383024  0.539
2008 Islam AE, Gupta G, Ahmed KZ, Mahapatra S, Alam MA. Optimization of Gate Leakage and NBTI for Plasma-Nitrided Gate Oxides by Numerical and Analytical Models Ieee Transactions On Electron Devices. 55: 1143-1152. DOI: 10.1109/Ted.2008.919545  0.556
2008 Masuduzzaman M, Islam AE, Alam MA. Exploring the capability of multifrequency charge pumping in resolving location and energy levels of traps within dielectric Ieee Transactions On Electron Devices. 55: 3421-3431. DOI: 10.1109/Ted.2008.2006773  0.577
2008 Islam AE, Alam MA. On the possibility of degradation-free field effect transistors Applied Physics Letters. 92. DOI: 10.1063/1.2919798  0.562
2007 Islam AE, Kufluoglu H, Varghese D, Mahapatra S, Alam MA. Recent issues in negative-bias temperature instability: Initial degradation, field dependence of interface trap generation, hole trapping effects, and relaxation Ieee Transactions On Electron Devices. 54: 2143-2154. DOI: 10.1109/Ted.2007.902883  0.686
2007 Islam AE, Kufluoglu H, Varghese D, Alam MA. Critical analysis of short-term negative bias temperature instability measurements: Explaining the effect of time-zero delay for on-the-fly measurements Applied Physics Letters. 90. DOI: 10.1063/1.2695998  0.664
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