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Seongmin Kim, Ph.D. - Publications

Affiliations: 
2013 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Nanoscience, Nanotechnology
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27 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Kim JH, Kim SM, Kim G, Yoon MH. Designing Polymeric Mixed Conductors and Their Application to Electrochemical-Transistor-Based Biosensors. Macromolecular Bioscience. e2000211. PMID 32851795 DOI: 10.1002/Mabi.202000211  0.306
2019 Lim T, Kim Y, Jeong SM, Kim CH, Kim SM, Park SY, Yoon MH, Ju S. Human sweat monitoring using polymer-based fiber. Scientific Reports. 9: 17294. PMID 31754149 DOI: 10.1038/S41598-019-53677-2  0.499
2017 Kim S, Ha J, Kim J. Morphology effect on the transferred charges in triboelectric nanogenerators: Numerical study using a finite element method Integrated Ferroelectrics. 183: 19-25. DOI: 10.1080/10584587.2017.1375820  0.327
2016 Kim S, Ha J, Kim H, Kim JB. Analytical Study on Piezoelectric Effects on Exciton Dissociation Communications in Computational Physics. 20: 179-187. DOI: 10.4208/Cicp.140515.161115A  0.305
2015 Kim S, Kim H, Ha J, Kim JB. A Continuum Model of a Compressed Piezoelectric ZnO Rod: Analytical and Numerical Study Integrated Ferroelectrics. 167: 146-153. DOI: 10.1080/10584587.2015.1107367  0.338
2015 Kim S. Piezoelectric Effects on the Exciton Dissociation Rate in Organic-Inorganic Hybrid Systems Integrated Ferroelectrics. 167: 69-77. DOI: 10.1080/10584587.2015.1106284  0.302
2013 Kim S, Kim H, Janes DB, Ju S. Interface studies of N2 plasma-treated ZnSnO nanowire transistors using low-frequency noise measurements. Nanotechnology. 24: 305201. PMID 23807306 DOI: 10.1088/0957-4484/24/30/305201  0.755
2013 Makowski MS, Kim S, Gaillard M, Janes D, Manfra MJ, Bryan I, Sitar Z, Arellano C, Xie J, Collazo R, Ivanisevic A. Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications. Applied Physics Letters. 102: 74102. PMID 23509411 DOI: 10.1063/1.4791788  0.579
2013 Bong J, Han J, Lee J, Kim S, Ju S. Fabrication of Highly Transparent Nanowire Transistors with One-Step-Processed Graphene Gate–Source–Drain Electrodes Applied Physics Express. 6: 055103. DOI: 10.7567/Apex.6.055103  0.617
2013 Lee S, Kim S, Janes DB, Meyyappan M, Ju S. Red-green-blue light sensitivity of oxide nanowire transistors for transparent display applications Aip Advances. 3. DOI: 10.1063/1.4789405  0.714
2012 Seo K, Kim S, Janes DB, Jung MW, An KS, Ju S. Effect of nitrogen plasma on the surface of indium oxide nanowires. Nanotechnology. 23: 435201. PMID 23060605 DOI: 10.1088/0957-4484/23/43/435201  0.714
2012 Kim S, Carpenter PD, Jean RK, Chen H, Zhou C, Ju S, Janes DB. Role of self-assembled monolayer passivation in electrical transport properties and flicker noise of nanowire transistors. Acs Nano. 6: 7352-61. PMID 22775468 DOI: 10.1021/Nn302484C  0.583
2012 Delker CJ, Kim S, Borg M, Wernersson LE, Janes DB. 1/f noise sources in dual-gated indium arsenide nanowire transistors Ieee Transactions On Electron Devices. 59: 1980-1987. DOI: 10.1109/Ted.2012.2194150  0.792
2012 Min Kim S, Kim H, Nam Y, Kim S. Effects of external surface charges on the enhanced piezoelectric potential of ZnO and AlN nanowires and nanotubes Aip Advances. 2. DOI: 10.1063/1.4770314  0.36
2012 Kim S, Janes DB, Choi SY, Ju S. Nanoscale contacts between semiconducting nanowires and metallic graphenes Applied Physics Letters. 101. DOI: 10.1063/1.4745210  0.695
2011 Lee C, Srisungsitthisunti P, Park S, Kim S, Xu X, Roy K, Janes DB, Zhou C, Ju S, Qi M. Control of current saturation and threshold voltage shift in indium oxide nanowire transistors with femtosecond laser annealing. Acs Nano. 5: 1095-101. PMID 21222453 DOI: 10.1021/Nn102723W  0.743
2011 Kim S, Srisungsitthisunti P, Lee C, Xu M, Ye PD, Qi M, Xu X, Zhou C, Ju S, Janes DB. Selective contact anneal effects on indium oxide nanowire transistors using femtosecond laser Journal of Physical Chemistry C. 115: 17147-17153. DOI: 10.1021/Jp203342J  0.761
2010 Kim S, Kim S, Janes DB, Mohammadi S, Back J, Shim M. DC modeling and the source of flicker noise in passivated carbon nanotube transistors. Nanotechnology. 21: 385203. PMID 20798468 DOI: 10.1088/0957-4484/21/38/385203  0.693
2010 Kim S, Kim S, Park J, Ju S, Mohammadi S. Fully transparent pixel circuits driven by random network carbon nanotube transistor circuitry. Acs Nano. 4: 2994-8. PMID 20450163 DOI: 10.1021/Nn1006094  0.635
2010 Kim S, Delker C, Chen P, Zhou C, Ju S, Janes DB. Oxygen plasma exposure effects on indium oxide nanowire transistors. Nanotechnology. 21: 145207. PMID 20234086 DOI: 10.1088/0957-4484/21/14/145207  0.76
2009 Kim S, Ju S, Back JH, Xuan Y, Ye PD, Shim M, Janes DB, Mohammadi S. Fully transparent thin-film transistors based on aligned carbon nanotube arrays and indium tin oxide electrodes. Advanced Materials (Deerfield Beach, Fla.). 21: 564-8. PMID 21161982 DOI: 10.1002/Adma.200801032  0.656
2009 Kim S, Lee C, Srisungsitthisunti P, Chen P, Zhou C, Xu X, Qi M, Mohammadi S, Ju S, Janes DB. Femtosecond laser annealing effects on indium oxide nanowire transistors 2009 International Semiconductor Device Research Symposium, Isdrs '09. DOI: 10.1109/ISDRS.2009.5378138  0.655
2009 Kim S, Xu M, Yu L, Ye PD, Janes DB, Ju S, Mohammadi S. Transparent driving thin-film transistor circuits based on uniformly grown singlewalled carbon nanotubes network Device Research Conference - Conference Digest, Drc. 117-118. DOI: 10.1109/DRC.2009.5354867  0.646
2008 Hong WK, Sohn JI, Hwang DK, Kwon SS, Jo G, Song S, Kim SM, Ko HJ, Park SJ, Welland ME, Lee T. Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors. Nano Letters. 8: 950-6. PMID 18302326 DOI: 10.1021/Nl0731116  0.328
2008 Kim S, Xuan Y, Ye PD, Mohammadi S, Lee SW. Single-walled carbon nanotube transistors fabricated by advanced alignment techniques utilizing CVD growth and dielectrophoresis Solid-State Electronics. 52: 1260-1263. DOI: 10.1016/J.Sse.2008.05.003  0.423
2007 Lin HC, Yang T, Sharifi H, Kim SK, Xuan Y, Shen T, Mohammadi S, Ye PD. Enhancement-mode GaAs metal-oxide-semiconductor high-electron-mobility transistors with atomic layer deposited Al2O3 as gate dielectric Applied Physics Letters. 91: 212101. DOI: 10.1063/1.2814052  0.401
2007 Lin HC, Kim SK, Chang D, Xuan Y, Mohammadi S, Ye PD, Lu G, Facchetti A, Marks TJ. Direct-current and radio-frequency characterizations of GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics Applied Physics Letters. 91: 092103. DOI: 10.1063/1.2776013  0.421
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