Jialing Yang, Ph.D. - Publications

Affiliations: 
2014 Physics Arizona State University, Tempe, AZ, United States 
Area:
Condensed Matter Physics, Optics Physics

7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Pang P, Ashcroft BA, Song W, Zhang P, Biswas S, Qing Q, Yang J, Nemanich RJ, Bai J, Smith JT, Reuter K, Balagurusamy VS, Astier Y, Stolovitzky G, Lindsay S. Fixed-gap tunnel junction for reading DNA nucleotides. Acs Nano. 8: 11994-2003. PMID 25380505 DOI: 10.1021/Nn505356G  0.514
2014 Yang J, Eller BS, Kaur M, Nemanich RJ. Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 32: 021514. DOI: 10.1116/1.4866378  0.554
2014 Zhu C, Caudle SL, Yang J, Smith DJ, Nemanich RJ. Band alignment of a HfO2-VO2-HfO2 confined well structure on silicon Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32: 11203. DOI: 10.1116/1.4832341  0.583
2014 Yang J, Eller BS, Nemanich RJ. Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride Journal of Applied Physics. 116: 123702. DOI: 10.1063/1.4895985  0.594
2014 Eller BS, Yang J, Nemanich RJ. Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States Journal of Electronic Materials. 43: 4560-4568. DOI: 10.1007/S11664-014-3383-Z  0.584
2013 Eller BS, Yang J, Nemanich RJ. Electronic surface and dielectric interface states on GaN and AlGaN Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 31: 050807. DOI: 10.1116/1.4807904  0.544
2012 Yang J, Eller BS, Zhu C, England C, Nemanich RJ. Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride Journal of Applied Physics. 112: 053710. DOI: 10.1063/1.4749268  0.624
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