Year |
Citation |
Score |
2014 |
Pang P, Ashcroft BA, Song W, Zhang P, Biswas S, Qing Q, Yang J, Nemanich RJ, Bai J, Smith JT, Reuter K, Balagurusamy VS, Astier Y, Stolovitzky G, Lindsay S. Fixed-gap tunnel junction for reading DNA nucleotides. Acs Nano. 8: 11994-2003. PMID 25380505 DOI: 10.1021/Nn505356G |
0.514 |
|
2014 |
Yang J, Eller BS, Kaur M, Nemanich RJ. Characterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 32: 021514. DOI: 10.1116/1.4866378 |
0.554 |
|
2014 |
Zhu C, Caudle SL, Yang J, Smith DJ, Nemanich RJ. Band alignment of a HfO2-VO2-HfO2 confined well structure on silicon Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32: 11203. DOI: 10.1116/1.4832341 |
0.583 |
|
2014 |
Yang J, Eller BS, Nemanich RJ. Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride Journal of Applied Physics. 116: 123702. DOI: 10.1063/1.4895985 |
0.594 |
|
2014 |
Eller BS, Yang J, Nemanich RJ. Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States Journal of Electronic Materials. 43: 4560-4568. DOI: 10.1007/S11664-014-3383-Z |
0.584 |
|
2013 |
Eller BS, Yang J, Nemanich RJ. Electronic surface and dielectric interface states on GaN and AlGaN Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 31: 050807. DOI: 10.1116/1.4807904 |
0.544 |
|
2012 |
Yang J, Eller BS, Zhu C, England C, Nemanich RJ. Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride Journal of Applied Physics. 112: 053710. DOI: 10.1063/1.4749268 |
0.624 |
|
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