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Xiuju Zhou, Ph.D. - Publications

Affiliations: 
2012 HKUST Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics, Materials Science Engineering
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5 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Li Q, Zhou X, Tang CW, Lau KM. Material and device characteristics of metamorphic In0.53Ga 0.47As MOSHEMTs grown on GaAs and Si substrates by MOCVD Ieee Transactions On Electron Devices. 60: 4112-4118. DOI: 10.1109/Ted.2013.2283721  0.345
2012 Zhou X, Li Q, Tang CW, Lau KM. Inverted-Type InGaAs Metal–Oxide–Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2 A/mm Applied Physics Express. 5: 104201. DOI: 10.1143/Apex.5.104201  0.363
2012 Zhou X, Li Q, Tang CW, Lau KM. 30-nm Inverted $\hbox{In}_{0.53}\hbox{Ga}_{0.47} \hbox{As}$ MOSHEMTs on Si Substrate Grown by MOCVD With Regrown Source/Drain Ieee Electron Device Letters. 33: 1384-1386. DOI: 10.1109/Led.2012.2210383  0.348
2012 Li Q, Zhou X, Tang CW, Lau KM. High-Performance Inverted $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD Ieee Electron Device Letters. 33: 1246-1248. DOI: 10.1109/Led.2012.2204431  0.331
2012 Zhou X, Tang CW, Li Q, Lau KM. In0.53Ga0.47As MOS-HEMTs on GaAs and Si substrates grown by MOCVD Physica Status Solidi (a). 209: 1380-1383. DOI: 10.1002/Pssa.201127707  0.352
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