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Wladek Walukiewicz - Publications

Affiliations: 
Materials Science & Engineering University of California, Berkeley, Berkeley, CA, United States 
Area:
Materials Science Engineering, Condensed Matter Physics
Website:
https://mse.berkeley.edu/2023/01/passing-of-adjunct-professor-wladyslaw-walukiewicz/#:~:text=Wladek%20received%20his%20Ph.,Laboratory%20(LBNL)%20in%201984.
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Year Citation  Score
2020 Patwary AM, Ho CY, Saito K, Guo Q, Yu KM, Walukiewicz W, Tanaka T. Effect of oxygen flow rate on properties of Cu4O3 thin films fabricated by radio frequency magnetron sputtering Journal of Applied Physics. 127: 85302. DOI: 10.1063/1.5144205  0.334
2020 Jang HC, Saito K, Guo Q, Yu KM, Walukiewicz W, Tanaka T. Realization of rocksalt Zn1−xCdxO thin films with an optical band gap above 3.0 eV by molecular beam epitaxy Crystengcomm. 22: 2781-2787. DOI: 10.1039/C9Ce02018G  0.427
2020 Li YJ, Yu KM, Chen GB, Liu CP, Walukiewicz W. Conduction band modifications by d states in vanadium doped CdO Journal of Alloys and Compounds. 822: 153567. DOI: 10.1016/J.Jallcom.2019.153567  0.424
2019 Gao J, Lee Y, Yu K, Mao SS, Walukiewicz W. Electronically controlled chemical stability of compound semiconductor surfaces. Acs Applied Materials & Interfaces. PMID 31407878 DOI: 10.1021/Acsami.9B10739  0.33
2019 Takahashi K, Imamura M, Chang JH, Tanaka T, Saito K, Guo Q, Yu KM, Walukiewicz W. Three-dimensional band structure and surface electron accumulation of rs-CdZnO studied by angle-resolved photoemission spectroscopy. Scientific Reports. 9: 8026. PMID 31142755 DOI: 10.1038/S41598-019-44423-9  0.422
2019 Svensson SP, Sarney WL, Beck WA, Hsu L, Walukiewicz W. On the predictive, quantitative properties of the amphoteric native defect model Semiconductor Science and Technology. 34. DOI: 10.1088/1361-6641/Ab40E7  0.384
2019 Gherasoiu I, Yu KM, Hawkridge M, Reichertz LA, Walukiewicz W. Mg induced compositional change in InGaN alloys Semiconductor Science and Technology. 34: 25014. DOI: 10.1088/1361-6641/Aaf9Ed  0.405
2019 Jaquez M, Specht P, Yu KM, Walukiewicz W, Dubon OD. Amorphous gallium oxide sulfide: A highly mismatched alloy Journal of Applied Physics. 126: 105708. DOI: 10.1063/1.5111985  0.45
2019 Kudrawiec R, Walukiewicz W. Electromodulation spectroscopy of highly mismatched alloys Journal of Applied Physics. 126: 141102. DOI: 10.1063/1.5111965  0.438
2019 Welna M, Janicki Ł, Linhart WM, Tanaka T, Yu KM, Kudrawiec R, Walukiewicz W. Effects of the host conduction band energy on the electronic band structure of ZnCdTeO dilute oxide alloys Journal of Applied Physics. 126: 83106. DOI: 10.1063/1.5111600  0.422
2019 Saddik KB, Braña AF, López N, Walukiewicz W, García BJ. Growth of GaP1 − x − yAsyNx on Si substrates by chemical beam epitaxy Journal of Applied Physics. 126: 105704. DOI: 10.1063/1.5111090  0.376
2019 Kudrawiec R, Janicki L, Linhart WM, Mayer MA, Sharp ID, Choi S, Bierwagen O, Speck JS, Walukiewicz W. Photoreflectance and photoinduced microwave reflectance studies of surface band bending in Mg-doped InN Journal of Applied Physics. 126: 45712. DOI: 10.1063/1.5096528  0.39
2019 Tanaka T, Matsuo K, Saito K, Guo Q, Tayagaki T, Yu KM, Walukiewicz W. Cl-doping effect in ZnTe1-xOx highly mismatched alloys for intermediate band solar cells Journal of Applied Physics. 125: 243109. DOI: 10.1063/1.5092553  0.443
2019 Choe HS, Li J, Zheng W, Lee J, Suh J, Allen FI, Liu H, Choi H, Walukiewicz W, Zheng H, Wu J. Anomalously high electronic thermal conductivity and Lorenz ratio in Bi2Te3 nanoribbons far from the bipolar condition Applied Physics Letters. 114: 152101. DOI: 10.1063/1.5092221  0.304
2019 Ting M, Yu KM, Jaquez M, Sharp ID, Ye Y, Segercrantz N, Greif R, Mao SS, Liu CP, Walukiewicz W. ZnO1−xTex highly mismatched alloys beyond the dilute alloy limit: Synthesis and electronic band structure Journal of Applied Physics. 125: 155702. DOI: 10.1063/1.5088852  0.441
2018 Walukiewicz W, Rey-Stolle I, Han G, Jaquez M, Broberg D, Xie W, Sherburne M, Mathews N, Asta M. Bistable Amphoteric Native Defect Model of Perovskite Photovoltaics. The Journal of Physical Chemistry Letters. PMID 29938512 DOI: 10.1021/Acs.Jpclett.8B01446  0.375
2018 Liu C, Ho CY, Dos Reis R, Foo Y, Guo P, Zapien JA, Walukiewicz W, Yu K. Room Temperature Synthesized High Mobility Transparent Amorphous CdO-Ga2O3 Alloys with Widely Tunable Electronic Bands. Acs Applied Materials & Interfaces. PMID 29388422 DOI: 10.1021/Acsami.7B18254  0.447
2018 Suh J, Tan TL, Zhao W, Park J, Lin DY, Park TE, Kim J, Jin C, Saigal N, Ghosh S, Wong ZM, Chen Y, Wang F, Walukiewicz W, Eda G, et al. Reconfiguring crystal and electronic structures of MoS2 by substitutional doping. Nature Communications. 9: 199. PMID 29335411 DOI: 10.1038/S41467-017-02631-9  0.451
2018 Heyman JN, Weiss EM, Rollag JR, Yu KM, Dubon OD, Kuang YJ, Tu CW, Walukiewicz W. THz transient photoconductivity of the III–V dilute nitride GaP y As1−y−x N x Semiconductor Science and Technology. 33: 125009. DOI: 10.1088/1361-6641/Aae7C5  0.393
2018 Fonseca JJ, Horton MK, Tom K, Yao J, Walukiewicz W, Dubon OD. Structure–Property Relationship of Low-Dimensional Layered GaSexTe1–x Alloys Chemistry of Materials. 30: 4226-4232. DOI: 10.1021/Acs.Chemmater.8B00130  0.376
2018 Zelazna K, Kudrawiec R, Luce A, Yu K-, (邝彦瑾) YJK, Tu CW, Walukiewicz W. Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers Solar Energy Materials and Solar Cells. 188: 99-104. DOI: 10.1016/J.Solmat.2018.08.024  0.458
2018 Lee Y, Liu CP, Yu KM, Walukiewicz W. Engineering Electronic Band Structure of Indium‐doped Cd1−xMgxO Alloys for Solar Power Conversion Applications Energy Technology. 6: 122-126. DOI: 10.1002/Ente.201700641  0.464
2017 Zelazna K, Gladysiewicz M, Polak MP, Almosni S, Létoublon A, Cornet C, Durand O, Walukiewicz W, Kudrawiec R. Nitrogen-related intermediate band in P-rich GaNxPyAs1-x-y alloys. Scientific Reports. 7: 15703. PMID 29147023 DOI: 10.1038/S41598-017-15933-1  0.472
2017 Welna M, Baranowski M, Linhart WM, Kudrawiec R, Yu KM, Mayer M, Walukiewicz W. Multicolor emission from intermediate band semiconductor ZnO1-xSex. Scientific Reports. 7: 44214. PMID 28287140 DOI: 10.1038/Srep44214  0.456
2017 Sarney WL, Svensson SP, Ting M, Segercrantz N, Walukiewicz W, Yu KM, Martin RW, Novikov SV, Foxon CT. Intermixing studies in GaN1-xSbx highly mismatched alloys. Applied Optics. 56: B64-B69. PMID 28157866 DOI: 10.1364/Ao.56.000B64  0.347
2017 Ahsan N, Miyashita N, Yu KM, Walukiewicz W, Okada Y. Multiband modification of III-V dilute nitrides for IBSC application Proceedings of Spie. 10099. DOI: 10.1117/12.2250700  0.413
2017 Tanaka T, Yu KM, Okano Y, Tsutsumi S, Haraguchi S, Saito K, Guo Q, Nishio M, Walukiewicz W. Improved Open-Circuit Voltage and Photovoltaic Properties of ZnTeO-Based Intermediate Band Solar Cells With n-Type ZnS Layers Ieee Journal of Photovoltaics. 7: 1024-1030. DOI: 10.1109/Jphotov.2017.2706419  0.382
2017 Heyman J, Schwartzberg A, Yu K, Luce A, Dubon O, Kuang Y, Tu C, Walukiewicz W. Carrier Lifetimes in aIII−V−NIntermediate-Band Semiconductor Physical Review Applied. 7. DOI: 10.1103/Physrevapplied.7.014016  0.413
2017 Wełna M, Baranowski M, Kudrawiec R, Nabetani Y, Walukiewicz W. Effects of band anticrossing on the temperature dependence of the band gap of ZnSe1-xOx alloys Semiconductor Science and Technology. 32: 15005. DOI: 10.1088/1361-6641/32/1/015005  0.43
2017 Tanaka T, Terasawa T, Okano Y, Tsutsumi S, Saito K, Guo Q, Nishio M, Yu KM, Walukiewicz W. Growth and characterization of Zn1-xCdxTe1-yOy highly mismatched alloys for intermediate band solar cells Solar Energy Materials and Solar Cells. 169: 1-7. DOI: 10.1016/J.Solmat.2017.05.002  0.39
2016 Tanaka T, Mizoguchi K, Terasawa T, Okano Y, Saito K, Guo Q, Nishio M, Yu KM, Walukiewicz W. Compositional dependence of optical transition energies in highly mismatched Zn1-xCdxTe1-yOy alloys Applied Physics Express. 9. DOI: 10.7567/Apex.9.021202  0.436
2016 Liu CP, Foo Y, Kamruzzaman M, Ho CY, Zapien JA, Zhu W, Li YJ, Walukiewicz W, Yu KM. Effects of Free Carriers on the Optical Properties of Doped CdO for Full-Spectrum Photovoltaics Physical Review Applied. 6: 64018. DOI: 10.1103/Physrevapplied.6.064018  0.357
2016 Yu KM, Sarney WL, Novikov SV, Segercrantz N, Ting M, Shaw M, Svensson SP, Martin RW, Walukiewicz W, Foxon CT. Highly mismatched GaN1-xSbx alloys: Synthesis, structure and electronic properties Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/8/083001  0.476
2016 Segercrantz N, Baumgartner Y, Ting M, Yu KM, Mao SS, Sarney WL, Svensson SP, Walukiewicz W. Undoped p-type GaN1-xSbx alloys: Effects of annealing Applied Physics Letters. 109: 252102. DOI: 10.1063/1.4972559  0.43
2016 Yu KM, Detert DM, Chen G, Zhu W, Liu C, Grankowska S, Hsu L, Dubon OD, Walukiewicz W. Defects and properties of cadmium oxide based transparent conductors Journal of Applied Physics. 119. DOI: 10.1063/1.4948236  0.453
2016 Chen Y, Zhang S, Gao W, Ke F, Yan J, Saha B, Ko C, Suh J, Chen B, Ager JW, Walukiewicz W, Jeanloz R, Wu J. Pressure-induced structural transition of CdxZn1-xO alloys Applied Physics Letters. 108. DOI: 10.1063/1.4947022  0.309
2016 Ristova MM, Zhu W, Yu KM, Walukiewicz W. Semiempirical modeling of a three sublayer photoanode for highly efficient photoelectrochemical water splitting: Parameter and electrolyte optimizations Solar Energy Materials and Solar Cells. 157: 190-199. DOI: 10.1016/J.Solmat.2016.05.030  0.389
2016 López N, Yu KM, Tanaka T, Walukiewicz W. Multicolor Electroluminescence from Intermediate Band Solar Cell Structures Advanced Energy Materials. 6. DOI: 10.1002/Aenm.201501820  0.418
2015 Suh J, Yu KM, Fu D, Liu X, Yang F, Fan J, Smith DJ, Zhang YH, Furdyna JK, Dames C, Walukiewicz W, Wu J. Simultaneous Enhancement of Electrical Conductivity and Thermopower of Bi₂Te₃ by Multifunctionality of Native Defects. Advanced Materials (Deerfield Beach, Fla.). 27: 3681-6. PMID 25974062 DOI: 10.1002/Adma.201501350  0.371
2015 Ahsan N, Miyashita N, Yu KM, Walukiewicz W, Okada Y. Electron Barrier Engineering in a Thin-Film Intermediate-Band Solar Cell Ieee Journal of Photovoltaics. 5: 878-884. DOI: 10.1109/Jphotov.2015.2412451  0.431
2015 Wahila MJ, Lebens-Higgins ZW, Quackenbush NF, Nishitani J, Walukiewicz W, Glans PA, Guo JH, Woicik JC, Yu KM, Piper LFJ. Evidence of extreme type-III band offset at buried n -type CdO/p -type SnTe interfaces Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.205307  0.435
2015 Wełna M, Kudrawiec R, Nabetani Y, Tanaka T, Jaquez M, Dubon OD, Yu KM, Walukiewicz W. Effects of a semiconductor matrix on the band anticrossing in dilute group II-VI oxides Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/8/085018  0.401
2015 Yu KM, Ting M, Novikov SV, Collin C, Sarney WL, Svensson SP, Luce AV, Denlinger JD, Walukiewicz W, Foxon CT. Effects of native defects on properties of low temperature grown, non-stoichiomtric gallium nitride Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/38/385101  0.471
2015 Jaquez M, Yu KM, Ting M, Hettick M, Sánchez-Royo JF, Wełna M, Javey A, Dubon OD, Walukiewicz W. Growth and characterization of ZnO1-xSx highly mismatched alloys over the entire composition Journal of Applied Physics. 118. DOI: 10.1063/1.4936551  0.463
2015 García-Hemme E, Yu KM, Wahnon P, González-Díaz G, Walukiewicz W. Effects of the d-donor level of vanadium on the properties of Zn<inf>1-x</inf>V<inf>x</inf>O films Applied Physics Letters. 106. DOI: 10.1063/1.4919791  0.452
2015 Baranowski M, Kudrawiec R, Luce AV, Latkowska M, Yu KM, Kuang YJ, Misiewicz J, Tu CW, Walukiewicz W. Temperature evolution of carrier dynamics in GaNxPyAs1-y-xalloys Journal of Applied Physics. 117. DOI: 10.1063/1.4919751  0.354
2015 Ting M, Dos Reis R, Jaquez M, Dubon OD, Mao SS, Yu KM, Walukiewicz W. Electronic band structure of ZnO-rich highly mismatched ZnO1-xTex alloys Applied Physics Letters. 106. DOI: 10.1063/1.4913840  0.487
2015 Francis CA, Detert DM, Chen G, Dubon OD, Yu KM, Walukiewicz W. NixCd1-xO: Semiconducting alloys with extreme type III band offsets Applied Physics Letters. 106. DOI: 10.1063/1.4906088  0.469
2015 Zhu W, Yu KM, Walukiewicz W. Indium doped Cd1-xZnxO alloys as wide window transparent conductors Thin Solid Films. 597: 183-187. DOI: 10.1016/J.Tsf.2015.11.052  0.389
2015 Sarney WL, Svensson SP, Novikov SV, Yu KM, Walukiewicz W, Ting M, Foxon CT. Exploration of the growth parameter space for MBE-grown GaN1-xSbx highly mismatched alloys Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.02.065  0.383
2015 Svensson SP, Sarney WL, Yu KM, Ting M, Calley WL, Novikov SV, Foxon CT, Walukiewicz W. Determination of N-/Ga-rich growth conditions, using in-situ auger electron spectroscopy Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.02.035  0.376
2015 Gherasoiu I, Yu KM, Reichertz L, Walukiewicz W. InGaN pn-junctions grown by PA-MBE: Material characterization and fabrication of nanocolumn electroluminescent devices Journal of Crystal Growth. 425: 393-397. DOI: 10.1016/J.Jcrysgro.2015.02.015  0.375
2014 Nishitani J, Detert D, Beeman J, Yu KM, Walukiewicz W. Surface hole accumulation and Fermi level stabilization energy in SnTe Applied Physics Express. 7. DOI: 10.7567/Apex.7.091201  0.434
2014 Welna M, Kudrawiec R, Nabetani Y, Walukiewicz W. Band anticrossing in ZnOSe highly mismatched alloy Applied Physics Express. 7. DOI: 10.7567/Apex.7.071202  0.44
2014 Tanaka T, Miyabara M, Nagao Y, Saito K, Guo Q, Nishio M, Yu KM, Walukiewicz W. Photogenerated Current By Two-Step Photon Excitation in ZnTeO Intermediate Band Solar Cells with n-ZnO Window Layer Ieee Journal of Photovoltaics. 4: 196-201. DOI: 10.1109/Jphotov.2013.2282738  0.409
2014 Suh J, Fu D, Liu X, Furdyna JK, Yu KM, Walukiewicz W, Wu J. Fermi-level stabilization in the topological insulators Bi 2 Se 3 and Bi 2 Te 3: Origin of the surface electron gas Physical Review B - Condensed Matter and Materials Physics. 89. DOI: 10.1103/Physrevb.89.115307  0.451
2014 Kudrawiec R, Luce AV, Gladysiewicz M, Ting M, Kuang YJ, Tu CW, Dubon OD, Yu KM, Walukiewicz W. Electronic band structure of GaNx PyAs1-x-y highly mismatched alloys: Suitability for intermediate-band solar cells Physical Review Applied. 1. DOI: 10.1103/Physrevapplied.1.034007  0.469
2014 Shaw M, Yu KM, Ting M, Powell REL, Sarney WL, Svensson SP, Kent AJ, Walukiewicz W, Foxon CT, Novikov SV, Martin RW. Composition and optical properties of dilute-Sb GaN1-xSbx highly mismatched alloys grown by MBE Journal of Physics D: Applied Physics. 47. DOI: 10.1088/0022-3727/47/46/465102  0.419
2014 Nishitani J, Yu KM, Walukiewicz W. Charge transfer and mobility enhancement at CdO/SnTe heterointerfaces Applied Physics Letters. 105. DOI: 10.1063/1.4896912  0.403
2014 Yu KM, Novikov SV, Ting M, Sarney WL, Svensson SP, Shaw M, Martin RW, Walukiewicz W, Foxon CT. Growth and characterization of highly mismatched GaN1-xSbx alloys Journal of Applied Physics. 116. DOI: 10.1063/1.4896364  0.44
2014 Detert DM, Tom KB, Battaglia C, Denlinger JD, Lim SHN, Javey A, Anders A, Dubon OD, Yu KM, Walukiewicz W. Fermi level stabilization and band edge energies in CdxZn 1-xO alloys Journal of Applied Physics. 115. DOI: 10.1063/1.4884683  0.48
2014 Kudrawiec R, Sitarek P, Gladysiewicz M, Misiewicz J, He Y, Jin Y, Vardar G, Mintarov AM, Merz JL, Goldman RS, Yu KM, Walukiewicz W. Surface photovoltage and modulation spectroscopy of E- and E+ transitions in GaNAs layers Thin Solid Films. 567: 101-104. DOI: 10.1016/J.Tsf.2014.07.052  0.374
2014 Novikov SV, Ting M, Yu KM, Sarney WL, Martin RW, Svensson SP, Walukiewicz W, Foxon CT. Tellurium n-type doping of highly mismatched amorphous GaN1-xAsxalloys in plasma-assisted molecular beam epitaxy Journal of Crystal Growth. 404: 9-13. DOI: 10.1016/J.Jcrysgro.2014.06.042  0.381
2014 Bakir Kandemir E, Gönül B, Barkema GT, Yu KM, Walukiewicz W, Wang LW. Modeling of the atomic structure and electronic properties of amorphous GaN1-xAsx Computational Materials Science. 82: 100-106. DOI: 10.1016/J.Commatsci.2013.09.039  0.369
2014 Gherasoiu I, Yu KM, Reichertz LA, Walukiewicz W. InGaN doping for high carrier concentration in plasma-assisted molecular beam epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 381-384. DOI: 10.1002/Pssc.201300460  0.392
2013 Tanaka T, Miyabara M, Saito K, Guo QX, Nishio M, Yu KM, Walukiewicz W. Development of ZnTe-Based Solar Cells Materials Science Forum. 750: 80-83. DOI: 10.4028/Www.Scientific.Net/Msf.750.80  0.305
2013 Hoffbauer MA, Williamson TL, Williams JJ, Fordham JL, Yu KM, Walukiewicz W, Reichertz LA. In-rich InGaN thin films: Progress on growth, compositional uniformity, and doping for device applications Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31. DOI: 10.1116/1.4794788  0.398
2013 Latkowska M, Kudrawiec R, Janiak F, Motyka M, Misiewicz J, Zhuang Q, Krier A, Walukiewicz W. Temperature dependence of photoluminescence from InNAsSb layers: The role of localized and free carrier emission in determination of temperature dependence of energy gap Applied Physics Letters. 102: 122109. DOI: 10.1063/1.4798590  0.356
2013 Kuang YJ, Yu KM, Kudrawiec R, Luce AV, Ting M, Walukiewicz W, Tu CW. GaNAsP: An intermediate band semiconductor grown by gas-source molecular beam epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4795782  0.332
2013 Tanaka T, Miyabara M, Nagao Y, Saito K, Guo Q, Nishio M, Yu KM, Walukiewicz W. Photocurrent induced by two-photon excitation in ZnTeO intermediate band solar cells Applied Physics Letters. 102: 52111. DOI: 10.1063/1.4790643  0.436
2013 Sarney WL, Svensson SP, Novikov SV, Yu KM, Walukiewicz W, Foxon CT. GaN1-xSbx highly mismatched alloys grown by low temperature molecular beam epitaxy under Ga-rich conditions Journal of Crystal Growth. 383: 95-99. DOI: 10.1016/J.Jcrysgro.2013.08.030  0.474
2013 Tanaka T, Nagao Y, Mochinaga T, Saito K, Guo Q, Nishio M, Yu KM, Walukiewicz W. Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cells Journal of Crystal Growth. 378: 259-262. DOI: 10.1016/J.Jcrysgro.2012.12.086  0.319
2013 Liliental-Weber Z, Dos Reis R, Levander AX, Yu KM, Walukiewicz W, Novikov SV, Foxon CT. Microstructure of GaN1-x Bi x Journal of Electronic Materials. 42: 26-32. DOI: 10.1007/S11664-012-2323-Z  0.394
2013 Liliental-Weber Z, Reis RD, Novikov SV, Yu KM, Levander AX, Dubon OD, Wu J, Walukiewicz W, Foxon CT. Microstructure of Mg doped GaNAs alloys Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 453-456. DOI: 10.1002/Pssc.201200666  0.357
2012 Dobrowolska M, Tivakornsasithorn K, Liu X, Furdyna JK, Berciu M, Yu KM, Walukiewicz W. Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band. Nature Materials. 11: 444-9. PMID 22344325 DOI: 10.1038/Nmat3250  0.404
2012 Liliental-Weber Z, Dos Reis R, Levander A, Yu KM, Walukiewicz W, Novikov SV, Foxon CT. Wurtzite-to amorphous-to cubic phase transition of GaN1-x Asx alloys with increasing As content Solid State Phenomena. 186: 74-77. DOI: 10.4028/Www.Scientific.Net/Ssp.186.74  0.399
2012 Kudrawiec R, Nair HP, Latkowska M, Misiewicz J, Bank SR, Walukiewicz W. Contactless electroreflectance study of the Fermi level pinning on GaSb surface in n-type and p-type GaSb Van Hoof structures Journal of Applied Physics. 112. DOI: 10.1063/1.4770413  0.372
2012 Kudrawiec R, Kopaczek J, Misiewicz J, Walukiewicz W, Petropoulos JP, Zhong Y, Dongmo PB, Zide JMO. Temperature dependence of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1−x alloys studied by photoreflectance Journal of Applied Physics. 112: 113508. DOI: 10.1063/1.4768262  0.326
2012 Kudrawiec R, Latkowska M, Welna M, Misiewicz J, Shafi M, Mari RH, Henini M, Walukiewicz W. Correlations between the band structure, activation energies of electron traps, and photoluminescence in n-type GaNAs layers Applied Physics Letters. 101. DOI: 10.1063/1.4747504  0.453
2012 Yu KM, Mayer MA, Speaks DT, He H, Zhao R, Hsu L, Mao SS, Haller EE, Walukiewicz W. Ideal transparent conductors for full spectrum photovoltaics Journal of Applied Physics. 111. DOI: 10.1063/1.4729563  0.528
2012 Mayer MA, Yu KM, Haller EE, Walukiewicz W. Tuning structural, electrical, and optical properties of oxide alloys: ZnO 1-xSe x Journal of Applied Physics. 111. DOI: 10.1063/1.4724336  0.559
2012 Ahsan N, Miyashita N, Islam MM, Yu KM, Walukiewicz W, Okada Y. Two-photon excitation in an intermediate band solar cell structure Applied Physics Letters. 100: 172111. DOI: 10.1063/1.4709405  0.419
2012 Millot M, Geballe ZM, Yu KM, Walukiewicz W, Jeanloz R. Red-green luminescence in indium gallium nitride alloys investigated by high pressure optical spectroscopy Applied Physics Letters. 100. DOI: 10.1063/1.4704367  0.385
2012 Tanaka T, Kusaba S, Mochinaga T, Saito K, Guo Q, Nishio M, Yu KM, Walukiewicz W. Molecular beam epitaxial growth and optical properties of highly mismatched ZnTe1−xOx alloys Applied Physics Letters. 100: 11905. DOI: 10.1063/1.3674310  0.414
2012 Mayer MA, Yu KM, Speaks DT, Denlinger JD, Reichertz LA, Beeman JW, Haller EE, Walukiewicz W. Band gap engineering of oxide photoelectrodes: Characterization of ZnO 1-xSe x Journal of Physical Chemistry C. 116: 15281-15289. DOI: 10.1021/Jp304481C  0.574
2012 Liliental-Weber Z, dos Reis R, Levander AX, Yu KM, Walukiewicz W, Novikov SV, Foxon CT. Structural studies of GaN 1-x As x and GaN 1-x Bi x alloys for solar cell applications Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 1586-1589. DOI: 10.1002/Pssc.201100582  0.435
2012 Novikov SV, Yu KM, Levander AX, Liliental-Weber Z, Dos Reis R, Kent AJ, Tseng A, Dubon OD, Wu J, Denlinger J, Walukiewicz W, Luckert F, Edwards PR, Martin RW, Foxon CT. Molecular beam epitaxy of GaN 1-xBi x alloys with high bismuth content Physica Status Solidi (a) Applications and Materials Science. 209: 419-423. DOI: 10.1002/Pssa.201100312  0.398
2011 Tanaka T, Yu KM, Levander AX, Dubon OD, Reichertz LA, Lopez N, Nishio M, Walukiewicz W. Demonstration of ZnTe1-xOx intermediate band solar cell Japanese Journal of Applied Physics. 50. DOI: 10.7567/Jjap.50.082304  0.453
2011 Levander AX, Novikov SV, Liliental-Weber Z, Dos Reis R, Denlinger JD, Wu J, Dubon OD, Foxon CT, Yu KM, Walukiewicz W. Growth and transport properties of p-type GaNBi alloys Journal of Materials Research. 26: 2887-2894. DOI: 10.1557/Jmr.2011.376  0.476
2011 Tanaka T, Yu KM, Levander AX, Dubon OD, Reichertz LA, Lopez N, Nishio M, Walukiewicz W. Demonstration of ZnTe$_{1-x}$O$_{x}$ Intermediate Band Solar Cell Japanese Journal of Applied Physics. 50: 82304. DOI: 10.1143/Jjap.50.082304  0.462
2011 López N, Reichertz LA, Yu KM, Campman K, Walukiewicz W. Intermediate band solar cell: Proof of concept Conference Record of the Ieee Photovoltaic Specialists Conference. 002091-002094. DOI: 10.1109/PVSC.2011.6186365  0.377
2011 López N, Reichertz LA, Yu KM, Campman K, Walukiewicz W. Engineering the electronic band structure for multiband solar cells Physical Review Letters. 106. DOI: 10.1103/Physrevlett.106.028701  0.433
2011 Millot M, Ubrig N, Poumirol J, Gherasoiu I, Walukiewicz W, George S, Portugall O, Léotin J, Goiran M, Broto J. Determination of effective mass in InN by high-field oscillatory magnetoabsorption spectroscopy Physical Review B. 83: 125204. DOI: 10.1103/Physrevb.83.125204  0.369
2011 Mayer MA, Choi S, Bierwagen O, Smith HM, Haller EE, Speck JS, Walukiewicz W. Electrical and optical properties of p-type InN Journal of Applied Physics. 110. DOI: 10.1063/1.3670038  0.528
2011 Levander AX, Novikov SV, Liliental-Weber Z, Dos Reis R, Dubon OD, Wu J, Foxon CT, Yu KM, Walukiewicz W. Doping of GaN1-xAsx with high As content Journal of Applied Physics. 110. DOI: 10.1063/1.3657779  0.345
2011 Levander AX, Tong T, Yu KM, Suh J, Fu D, Zhang R, Lu H, Schaff WJ, Dubon O, Walukiewicz W, Cahill DG, Wu J. Effects of point defects on thermal and thermoelectric properties of InN Applied Physics Letters. 98. DOI: 10.1063/1.3536507  0.325
2011 Novikov SV, Staddon CR, Foxon CT, Yu KM, Broesler R, Hawkridge M, Liliental-Weber Z, Denlinger J, Demchenko I, Luckert F, Edwards PR, Martin RW, Walukiewicz W. Growth by molecular beam epitaxy of amorphous and crystalline GaNAs alloys with band gaps from 3.4 to 0.8 eV for solar energy conversion devices Journal of Crystal Growth. 323: 60-63. DOI: 10.1016/J.Jcrysgro.2010.11.064  0.433
2011 Demchenko IN, Chernyshova M, Tyliszczak T, Denlinger JD, Yu KM, Speaks DT, Hemmers O, Walukiewicz W, Derkachov G, Lawniczak-Jablonska K. Electronic structure of CdO studied by soft X-ray spectroscopy Journal of Electron Spectroscopy and Related Phenomena. 184: 249-253. DOI: 10.1016/J.Elspec.2010.09.011  0.446
2011 Gao F, Yu KM, Mendelsberg RJ, Anders A, Walukiewicz W. Preparation of high transmittance ZnO:Al film by pulsed filtered cathodic arc technology and rapid thermal annealing Applied Surface Science. 257: 7019-7022. DOI: 10.1016/J.Apsusc.2011.03.013  0.31
2011 Gherasoiu I, Reichertz LA, Yu KM, Ager JW, Kao VM, Walukiewicz W. Photovoltaic action from InxGa1-xN p-n junctions with x > 0.2 grown on silicon Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2466-2468. DOI: 10.1002/Pssc.201001169  0.41
2011 Yu KM, Novikov SV, Broesler R, Levander AX, Liliental-Weber Z, Luckert F, Martin RW, Dubon O, Wu J, Walukiewicz W, Foxon CT. GaNAs alloys over the whole composition range grown on crystalline and amorphous substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2503-2505. DOI: 10.1002/Pssc.201001010  0.389
2010 Reurings F, Rauch C, Tuomisto F, Jones RE, Yu KM, Walukiewicz W, Schaff WJ. Defect redistribution in postirradiation rapid-thermal-annealed InN Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.153202  0.377
2010 Demchenko IN, Denlinger JD, Chernyshova M, Yu KM, Speaks DT, Olalde-Velasco P, Hemmers O, Walukiewicz W, Derkachova A, Lawniczak-Jablonska K. Full multiple scattering analysis of XANES at the Cd L3 and O K edges in CdO films combined with a soft-x-ray emission investigation Physical Review B. 82: 75107. DOI: 10.1103/Physrevb.82.075107  0.393
2010 Mayer MA, Stone PR, Miller N, Smith HM, Dubon OD, Haller EE, Yu KM, Walukiewicz W, Liu X, Furdyna JK. Electronic structure of Ga1-x Mnx As analyzed according to hole-concentration-dependent measurements Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.045205  0.59
2010 Mayer MA, Speaks DT, Man Yu K, Mao SS, Haller EE, Walukiewicz W. Band structure engineering of ZnO1-xSex alloys Proceedings of Spie - the International Society For Optical Engineering. 7770. DOI: 10.1063/1.3464323  0.524
2010 Tanaka T, Yu KM, Stone PR, Beeman JW, Dubon OD, Reichertz LA, Kao VM, Nishio M, Walukiewicz W. Demonstration of homojunction ZnTe solar cells Journal of Applied Physics. 108. DOI: 10.1063/1.3463421  0.305
2010 Speaks DT, Mayer MA, Yu KM, Mao SS, Haller EE, Walukiewicz W. Fermi level stabilization energy in cadmium oxide Journal of Applied Physics. 107. DOI: 10.1063/1.3428444  0.571
2010 Goiran M, Millot M, Poumirol JM, Gherasoiu I, Walukiewicz W, Leotin J. Electron cyclotron effective mass in indium nitride Applied Physics Letters. 96. DOI: 10.1063/1.3304169  0.337
2010 Lackner D, Martine M, Cherng YT, Steger M, Walukiewicz W, Thewalt MLW, Mooney PM, Watkins SP. Electrical and optical characterization of n-InAsSb/n-GaSb heterojunctions Journal of Applied Physics. 107. DOI: 10.1063/1.3275509  0.413
2010 Brown GF, Ager JW, Walukiewicz W, Wu J. Finite element simulations of compositionally graded InGaN solar cells Solar Energy Materials and Solar Cells. 94: 478-483. DOI: 10.1016/J.Solmat.2009.11.010  0.305
2010 Olea J, Yu KM, Walukiewicz W, Gonzalez-Díaz G. Hall mobilities in GaNxAs1-x Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 1890-1893. DOI: 10.1002/Pssc.200983569  0.446
2010 Gherasoiu I, Yu KM, Reichertz LA, Kao VM, Hawkridge M, Ager JW, Walukiewicz W. High quality InxGa1-xN thin films with x > 0.2 grown on silicon Physica Status Solidi (B) Basic Research. 247: 1747-1749. DOI: 10.1002/Pssb.200983462  0.359
2010 Reurings F, Tuomisto F, Egger W, Löwe B, Ravelli L, Sojak S, Liliental-Weber Z, Jones RE, Yu KM, Walukiewicz W, Schaff WJ. Irradiation‐induced defects in InN and GaN studied with positron annihilation Physica Status Solidi (a). 207: 1087-1090. DOI: 10.1002/Pssa.200983111  0.375
2009 Novikov SV, Staddon CR, Akimov AV, Campion R, Zainal N, Kent AJ, Foxon T, Chen CH, Yu KM, Walukiewicz W. Growth by Molecular Beam Epitaxy of GaNAs Alloys with High As Content for Potential Photoanode Applications in Hydrogen Production Mrs Proceedings. 1167. DOI: 10.1557/Proc-1167-O04-07  0.421
2009 Reichertz LA, Gherasoiu I, Yu KM, Kao VM, Walukiewicz W, Ager JW. Demonstration of a III - Nitride/silicon tandem solar cell Applied Physics Express. 2. DOI: 10.1143/Apex.2.122202  0.334
2009 Chen X, Matthews KD, Hao D, Schaff WJ, Eastman LF, Walukiewicz W, Ager JW, Yu KM. MBE growth and characterization of Mg-doped III-nitrides on sapphire International Journal of High Speed Electronics and Systems. 19: 113-119. DOI: 10.1142/S0129156409006151  0.378
2009 Jones RE, Li SX, Yu KM, Ager JW, Haller EE, Walukiewicz W, Lu H, Schaff WJ. Properties of native point defects in In1-xAlxN alloys Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/9/095406  0.574
2009 Yu KM, Novikov SV, Broesler R, Demchenko IN, Denlinger JD, Liliental-Weber Z, Luckert F, Martin RW, Walukiewicz W, Foxon CT. Highly mismatched crystalline and amorphous GaN1-x As x alloys in the whole composition range Journal of Applied Physics. 106. DOI: 10.1063/1.3259434  0.349
2009 Broesler R, Haller EE, Walukiewicz W, Muranaka T, Matsumoto T, Nabetani Y. Temperature dependence of the band gap of ZnSe1-x Ox Applied Physics Letters. 95. DOI: 10.1063/1.3242026  0.514
2009 Miller N, Ager JW, Jones RE, Smith HM, Mayer MA, Yu KM, Hawkridge ME, Liliental-Weber Z, Haller EE, Walukiewicz W, Schaff WJ, Gallinat C, Koblmüller G, Speck JS. Electrical and electrothermal transport in InN: The roles of defects Physica B: Condensed Matter. 404: 4862-4865. DOI: 10.1016/J.Physb.2009.08.242  0.52
2009 Novikov SV, Staddon CR, Akimov AV, Campion RP, Zainal N, Kent AJ, Foxon CT, Chen CH, Yu KM, Walukiewicz W. Molecular beam epitaxy of crystalline and amorphous GaN layers with high As content Journal of Crystal Growth. 311: 3417-3422. DOI: 10.1016/J.Jcrysgro.2009.04.010  0.471
2009 Ma Z, Yu KM, Walukiewicz W, Yu PY, Mao SS. Strain relaxation of CdTe films growing on lattice-mismatched substrates Applied Physics a: Materials Science and Processing. 96: 379-384. DOI: 10.1007/S00339-009-5195-1  0.342
2009 Hawkridge ME, Liliental-Weber Z, Yu KM, Reichertz LA, Schaff WJ, Ager JW, Walukiewicz W. Stacking faults and phase changes in Mg-doped InGaN grown on Si Physica Status Solidi (C) Current Topics in Solid State Physics. 6. DOI: 10.1002/Pssc.200880978  0.306
2009 Ager JW, Reichertz LA, Cui Y, Romanyuk YE, Kreier D, Leone SR, Yu KM, Schaff WJ, Walukiewicz W. Electrical properties of InGaN-Si heterojunctions Physica Status Solidi (C) Current Topics in Solid State Physics. 6: S413-S416. DOI: 10.1002/Pssc.200880967  0.343
2009 Chen CH, Yu KM, Walukiewicz W. Optical properties of ion beam synthesized nitrogen-rich GaN1-xAsx Physica Status Solidi (C) Current Topics in Solid State Physics. 6. DOI: 10.1002/Pssc.200880966  0.43
2009 Williamson TL, Hoffbauer MA, Yu KM, Reichertz LA, Hawkridge ME, Jones RE, Miller N, Ager JW, Liliental-Weber Z, Walukiewicz W. Highly luminescent InxGa1-xN thin films grown over the entire composition range by energetic neutral atom beam lithography & epitaxy (ENABLE) Physica Status Solidi (C) Current Topics in Solid State Physics. 6. DOI: 10.1002/Pssc.200880956  0.398
2008 Reichertz LA, Yu KM, Cui Y, Hawkridge ME, Beeman JW, Liliental-Weber Z, Ager JW, Walukiewicz W, Schaff WJ, Williamson TL, Hoffbauer MA. InGaN Thin Films Grown by ENABLE and MBE Techniques on Silicon Substrates Mrs Proceedings. 1068. DOI: 10.1557/Proc-1068-C06-02  0.421
2008 Alberi K, Yu KM, Stone PR, Dubon OD, Walukiewicz W, Wojtowicz T, Liu X, Furdyna JK. Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.075201  0.475
2008 Alberi K, Blacksberg J, Bell LD, Nikzad S, Yu KM, Dubon OD, Walukiewicz W. Band anticrossing in highly mismatched Snx Ge1-x semiconducting alloys Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.073202  0.344
2008 Cho YJ, Yu KM, Liu X, Walukiewicz W, Furdyna JK. Effects of donor doping on Ga1-xMnxAs Applied Physics Letters. 93. DOI: 10.1063/1.3063046  0.305
2008 Ma Z, Liu L, Yu KM, Walukiewicz W, Perry DL, Yu PY, Mao SS. Experimental and theoretical studies on gadolinium doping in ZnTe Journal of Applied Physics. 103. DOI: 10.1063/1.2832403  0.464
2008 Yu KM, Wojtowicz T, Walukiewicz W, Liu X, Furdyna JK. Chapter 3 Fermi Level Effects on Mn Incorporation in III-Mn-V Ferromagnetic Semiconductors Semiconductors and Semimetals. 82: 89-133. DOI: 10.1016/S0080-8784(08)00003-3  0.37
2008 Romanyuk YE, Yu KM, Walukiewicz W, Lavrynyuk ZV, Pekhnyo VI, Parasyuk OV. Single crystal growth and properties of γ-phase in the CuInSe2+2CdS⇔CuInS2+2CdSe reciprocal system Solar Energy Materials and Solar Cells. 92: 1495-1499. DOI: 10.1016/J.Solmat.2008.06.014  0.33
2008 Amir FZ, Clark K, Maldonado E, Kirk WP, Jiang JC, Ager JW, Yu KM, Walukiewicz W. Epitaxial growth of CdSexTe1-x thin films on Si(1 0 0) by molecular beam epitaxy using lattice mismatch graded structures Journal of Crystal Growth. 310: 1081-1087. DOI: 10.1016/J.Jcrysgro.2007.12.055  0.337
2008 Miller N, Jones RE, Yu KM, Ager JW, Liliental-Weber Z, Haller EE, Walukiewicz W, Williamson TL, Hoffbauer MA. Low-temperature grown compositionally graded InGaN films Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1866-1869. DOI: 10.1002/Pssc.200778719  0.519
2008 Ager JW, Miller N, Jones RE, Yu KM, Wu J, Schaff WJ, Walukiewicz W. Mg‐doped InN and InGaN – Photoluminescence, capacitance–voltage and thermopower measurements Physica Status Solidi B-Basic Solid State Physics. 245: 873-877. DOI: 10.1002/Pssb.200778731  0.407
2007 Tuomisto F, Pelli A, Yu KM, Walukiewicz W, Schaff WJ. Compensating point defects in He+4 -irradiated InN Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.193201  0.402
2007 Alberi K, Wu J, Walukiewicz W, Yu KM, Dubon OD, Watkins SP, Wang CX, Liu X, Cho YJ, Furdyna J. Valence-band anticrossing in mismatched III-V semiconductor alloys Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.045203  0.451
2007 Pačebutas V, Bertulis K, Dapkus L, Aleksejenko G, Krotkus A, Yu KM, Walukiewicz W. Characterization of low-temperature molecular-beam-epitaxy grown GaBiAs layers Semiconductor Science and Technology. 22: 819-823. DOI: 10.1088/0268-1242/22/7/026  0.392
2007 Plesiewicz J, Suski T, Dmowski L, Walukiewicz W, Yu KM, Korman A, Ratajczak R, Stonert A, Lu H, Schaff W. Towards identification of localized donor states in InN Semiconductor Science and Technology. 22: 1161-1164. DOI: 10.1088/0268-1242/22/10/014  0.413
2007 Hsu L, Jones RE, Li SX, Yu KM, Walukiewicz W. Electron mobility in InN and III-N alloys Journal of Applied Physics. 102. DOI: 10.1063/1.2785005  0.425
2007 Ma Z, Yu KM, Liu L, Wang L, Perry DL, Walukiewicz W, Yu P, Mao SS. Copper-doped CdTe films with improved hole mobility Applied Physics Letters. 91. DOI: 10.1063/1.2778455  0.35
2007 Alberi K, Dubon OD, Walukiewicz W, Yu KM, Bertulis K, Krotkus A. Valence band anticrossing in GaBi xAs 1-x Applied Physics Letters. 91. DOI: 10.1063/1.2768312  0.465
2007 Yu KM, Walukiewicz W, Farshchi R, Dubon OD, Ager JW, Sharp ID, Haller EE. Synthesis and optical properties of multiband III-V semiconductor alloys Aip Conference Proceedings. 893: 1477-1478. DOI: 10.1063/1.2730465  0.51
2007 Liliental-Weber Z, Jones R, Genuchten vHE, Yu K, Walukiewicz W, Ager J, Haller E, Lu HH, Schaff W. TEM studies of as-grown, irradiated and annealed InN films Physica B-Condensed Matter. 401: 646-649. DOI: 10.1016/J.Physb.2007.09.042  0.494
2007 Yu KM, Scarpulla MA, Farshchi R, Dubon OD, Walukiewicz W. Synthesis of highly mismatched alloys using ion implantation and pulsed laser melting Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 261: 1150-1154. DOI: 10.1016/J.Nimb.2007.03.033  0.379
2007 Alberi K, Wu J, Walukiewicz W, Yu KM, Dubon OD, Watkins SP, Wang CX, Liu X, Cho YJ, Furdyna JK. Valence band anticrossing in mismatched III-V semiconductor alloys Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 1711-1714. DOI: 10.1002/Pssc.200674286  0.443
2007 Ager JW, Jones RE, Yamaguchi DM, Yu KM, Walukiewicz W, Li SX, Haller EE, Lu H, Schaff WJ. p-type InN and In-rich InGaN Physica Status Solidi (B). 244: 1820-1824. DOI: 10.1002/Pssb.200674762  0.483
2006 Jones RE, Yu KM, Li SX, Walukiewicz W, Ager JW, Haller EE, Lu H, Schaff WJ. Evidence for p-type doping of InN. Physical Review Letters. 96: 125505. PMID 16605926 DOI: 10.1103/Physrevlett.96.125505  0.485
2006 Walukiewicz W, Ager JW, Yu KM, Liliental-Weber Z, Wu J, Li SX, Jones RE, Denlinger JD. Structure and electronic properties of InN and In-rich group III-nitride alloys Journal of Physics D. 39. DOI: 10.1088/0022-3727/39/5/R01  0.504
2006 Li SX, Jones RE, Haller EE, Yu KM, Walukiewicz W, Ager JW, Liliental-Weber Z, Lu H, Schaff WJ. Photoluminescence of energetic particle-irradiated InxGa1−xN alloys Applied Physics Letters. 88: 151101. DOI: 10.1063/1.2193799  0.521
2006 Liliental-Weber Z, Zakharov DN, Yu KM, Ager JW, Walukiewicz W, Haller EE, Lu H, Schaff WJ. Compositional modulation in InxGa1-xNInxGa1-xN Physica B-Condensed Matter. 376: 468-472. DOI: 10.1016/J.Physb.2005.12.120  0.499
2006 Jones RE, Li SX, Hsu L, Yu KM, Walukiewicz W, Liliental-Weber Z, Ager JW, Haller EE, Lu H, Schaff WJ. Native-defect-controlled n-type conductivity in InN Physica B-Condensed Matter. 376: 436-439. DOI: 10.1016/J.Physb.2005.12.112  0.54
2006 Li SX, Yu KM, Wu J, Jones RE, Walukiewicz W, Ager JW, Shan W, Haller EE, Lu H, Schaff WJ. Native defects in InxGa1−xN alloys Physica B-Condensed Matter. 376: 432-435. DOI: 10.1016/J.Physb.2005.12.111  0.551
2006 Walukiewicz W, Jones R, Li S, Yu K, Ager J, Haller E, Lu H, Schaff W. Dopants and defects in InN and InGaN alloys Journal of Crystal Growth. 288: 278-282. DOI: 10.1016/J.Jcrysgro.2005.12.082  0.597
2005 Liliental-Weber Z, Zakharov DN, Yu KM, Ager JW, Walukiewicz W, Haller EE, Lu H, Schaff WJ. Compositional modulation in In(x)Ga(1-x)N: TEM and X-ray studies. Journal of Electron Microscopy. 54: 243-50. PMID 16123056 DOI: 10.1093/Jmicro/Dfi033  0.494
2005 Walukiewicz W, Yu KM, Wu J, Ager JW, Shan W, Scrapulla MA, Dubon OD, Becla P. Highly Mismatched Alloys for Intermediate Band Solar Cells Mrs Proceedings. 865. DOI: 10.1557/Proc-865-F5.7  0.463
2005 Li S, Yu K, Jones R, Wu J, Walukiewicz W, Ager J, Shan W, Haller E, Lu H, Schaff WJ, Kemp W. Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN Mrs Proceedings. 864. DOI: 10.1557/Proc-864-E7.10  0.511
2005 Jones RE, van Genuchten HCM, Li SX, Hsu L, Yu KM, Walukiewicz W, Ager III JW, Haller EE, Lu H, Schaff WJ. Electron Transport Properties of InN Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff06-06  0.553
2005 Li SX, Yu KM, Wu J, Jones RE, Walukiewicz W, Ager JW, Shan W, Haller EE, Lu H, Schaff WJ. Fermi-level stabilization energy in group III nitrides Physical Review B. 71. DOI: 10.1103/Physrevb.71.161201  0.527
2005 Li SX, Haller EE, Yu KM, Walukiewicz W, Ager JW, Wu J, Shan W, Lu H, Schaff WJ. Effect of native defects on optical properties of InxGa1−xN alloys Applied Physics Letters. 87: 161905. DOI: 10.1063/1.2108118  0.551
2005 Shan W, Walukiewicz W, Ager JW, Yu KM, Yuan HB, Xin HP, Cantwell G, Song JJ. Nature of room-temperature photoluminescence in ZnO Applied Physics Letters. 86: 191911. DOI: 10.1063/1.1923757  0.349
2005 Yu KM, Walukiewicz W, Wojtowicz T, Denlinger J, Scarpulla MA, Liu X, Furdyna JK. Effect of film thickness on the incorporation of Mn interstitiels in Ga 1-xMn xas Applied Physics Letters. 86. DOI: 10.1063/1.1855430  0.323
2005 Ager JW, Walukiewicz W, Yu KM, Shan W, Denlinger J, Wu J. Group III-nitride materials for high efficiency photoelectrocliemical cells Materials Research Society Symposium Proceedings. 884: 87-91.  0.317
2004 Liliental-Weber Z, Zakharov DN, Yu KM, Wu J, Li SX, Ager J, Walukiewicz W, Haller E, Lu H, Schaff WJ. Compositional Ordering in InxGa1-xN and its influence on optical properties Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E11.19  0.523
2004 Shan W, Walukiewicz W, Yu KM, Ager JW, Wu J, Beeman J, Scapulla MA, Dubon OD, Haller EE, Nabetani Y, Becla P. Effect of oxygen on the electronic band structure of II-O-VI alloys Proceedings of Spie - the International Society For Optical Engineering. 5349: 426-434. DOI: 10.1117/12.529297  0.482
2004 Wu J, Walukiewicz W, Shan W, Bourret-Courchesne E, Ager JW, Yu KM, Haller EE, Kissell K, Bachilo SM, Weisman RB, Smalley RE. Structure-dependent hydrostatic deformation potentials of individual single-walled carbon nanotubes Physical Review Letters. 93: 017404-1. DOI: 10.1103/Physrevlett.93.017404  0.447
2004 Wu J, Walukiewicz W, Yu KM, Denlinger JD, Shan W, Ager JW, Kimura A, Tang HF, Kuech TF. Valence band hybridization inN-richGaN1−xAsxalloys Physical Review B. 70. DOI: 10.1103/Physrevb.70.115214  0.463
2004 Ruzmetov D, Scherschligt J, Baxter DV, Wojtowicz T, Liu X, Sasaki Y, Furdyna JK, Yu KM, Walukiewicz W. High-temperature Hall effect in Ga1-xMnxAs Physical Review B - Condensed Matter and Materials Physics. 69: 155207-1-155207-6. DOI: 10.1103/Physrevb.69.155207  0.319
2004 Furdyna JK, Wojtowicz T, Liu X, Yu KM, Walukiewicz W, Vurgaftman I, Meyer JR. Fermi level effects on Mn incorporation in modulation-doped ferromagnetic III1−xMnxV heterostructures Journal of Physics: Condensed Matter. 16. DOI: 10.1088/0953-8984/16/48/004  0.39
2004 Shan W, Yu KM, Walukiewicz W, Wu J, Ager JW, Haller EE. Band anticrossing in dilute nitrides Journal of Physics Condensed Matter. 16. DOI: 10.1088/0953-8984/16/31/024  0.588
2004 Yu KM, Walukiewicz W, Shan W, Wu J, Beeman JW, Scarpulla MA, Dubon OD, Becla P. Synthesis and optical properties of II-O-VI highly mismatched alloys Journal of Applied Physics. 95: 6232-6238. DOI: 10.1063/1.1713021  0.314
2004 Shan W, Yu KM, Walukiewicz W, Beeman JW, Wu J, Ager JW, Scarpulla MA, Dubon OD, Haller EE. Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloys Applied Physics Letters. 84: 924-926. DOI: 10.1063/1.1646457  0.573
2004 Wu J, Yu KM, Walukiewicz W. Mutual passivation effects in highly mismatched group III-V-N alloys Iee Proceedings: Optoelectronics. 151: 460-464. DOI: 10.1049/ip-opt:20040933  0.313
2004 Wu J, Han W, Walukiewicz W, Ager JW, Shan W, Haller EE, Zettl A. Raman Spectroscopy and Time-Resolved Photoluminescence of BN and BxCyNzNanotubes Nano Letters. 4: 647-650. DOI: 10.1021/Nl049862E  0.485
2004 Wojtowicz T, Furdyna JK, Liu X, Yu KM, Walukiewicz W. Electronic effects determining the formation of ferromagnetic III 1-xMnx V alloys during epitaxial growth Physica E: Low-Dimensional Systems and Nanostructures. 25: 171-180. DOI: 10.1016/J.Physe.2004.06.014  0.363
2004 Wojtowicz T, Lim W, Liu X, Cywiński G, Kutrowski M, Titova L, Yee K, Dobrowolska M, Furdyna J, Yu K, Walukiewicz W, Kim G, Cheon M, Chen X, Wang S, et al. Growth and properties of ferromagnetic In1−xMnxSb alloys Physica E: Low-Dimensional Systems and Nanostructures. 20: 325-332. DOI: 10.1016/J.Physe.2003.08.028  0.406
2004 Walukiewicz W. Narrow band gap group III-nitride alloys Physica E: Low-Dimensional Systems and Nanostructures. 20: 300-307. DOI: 10.1016/J.Physe.2003.08.023  0.452
2004 Yu KM, Walukiewicz W, Wojtowicz T, Lim WL, Liu X, Dobrowolska M, Furdyna JK. Lattice location of Mn and fundamental Curie temperature limit in ferromagnetic Ga1-xMnxAs Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 219: 636-641. DOI: 10.1016/J.Nimb.2004.01.133  0.366
2004 Walukiewicz W, Li S, Wu J, Yu K, Ager J, Haller E, Lu H, Schaff WJ. Optical properties and electronic structure of InN and In-rich group III-nitride alloys Journal of Crystal Growth. 269: 119-127. DOI: 10.1016/J.Jcrysgro.2004.05.041  0.612
2004 Shan W, Wu J, Walukiewicz W, Ager JW, Yu KM, Haller EE, Kissell K, Bachilo SM, Weisman RB, Smalley RE. Pressure dependence of optical transitions in semiconducting single-walled carbon nanotubes Physica Status Solidi (B) Basic Research. 241: 3367-3373. DOI: 10.1002/Pssb.200405250  0.501
2004 Li SX, Wu J, Walukiewicz W, Shan W, Haller EE, Lu H, Schaff WJ, Saito Y, Nanishi Y. Effects of hydrostatic pressure on optical properties of InN and In-rich group III-nitride alloys Physica Status Solidi (B). 241: 3107-3112. DOI: 10.1002/Pssb.200405232  0.562
2004 Shan W, Walukiewicz W, Wu J, Yu KM, Ager JW, Siebentritt S, Rega N. Pressure‐dependent photoluminescence study of CuGaSe2 Physica Status Solidi B-Basic Solid State Physics. 241: 3117-3122. DOI: 10.1002/Pssb.200405223  0.365
2004 Shan W, Walukiewicz W, Ager III JW, Yu KM, Wu J, Haller EE, Nabetani Y. Oxygen induced band-gap reduction in ZnOxSe1−x alloys Physica Status Solidi (B). 241: 603-606. DOI: 10.1002/Pssb.200304168  0.6
2004 Yu KM, Walukiewicz W, Wu J, Shan W, Scarpulla MA, Dubon OD, Beeman JW, Becla P. Diluted ZnMnTe oxide: A multi-band semiconductor for high efficiency solar cells Physica Status Solidi (B) Basic Research. 241: 660-663. DOI: 10.1002/Pssb.200304167  0.442
2003 Yu KM, Walukiewicz W, Wu J, Shan W, Beeman JW, Scarpulla MA, Dubon OD, Becla P. Diluted II-VI oxide semiconductors with multiple band gaps. Physical Review Letters. 91: 246403. PMID 14683137 DOI: 10.1103/Physrevlett.91.246403  0.439
2003 Li SX, Wu J, Walukiewicz W, Shan W, Haller EE, Lu H, Schaff WJ. Pressure Dependence of Optical Transitions in In-rich Group III-Nitride Alloys Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y12.9  0.515
2003 Lu H, Schaff WJ, Eastman LF, Cimalla V, Pezoldt J, Ambacher O, Wu J, Walukiewicz W. Growth of non-polar a-plane and cubic InN on r-plane sapphire by molecular beam epitaxy Materials Research Society Symposium - Proceedings. 798: 213-218. DOI: 10.1557/Proc-798-Y12.6  0.308
2003 Wu J, Yu KM, Walukiewicz W, He G, Haller EE, Mars DE, Chamberlin DR. Mutual passivation effects in Si-doped dilutedInyGa1−yAs1−xNxalloys Physical Review B. 68. DOI: 10.1103/Physrevb.68.195202  0.554
2003 Yu KM, Walukiewicz W, Wojtowicz T, Lim WL, Liu X, Bindley U, Dobrowolska M, Furdyna JK. Curie temperature limit in ferromagnetic Ga 1-x Mn x As Physical Review B. 68: 41308. DOI: 10.1103/Physrevb.68.041308  0.311
2003 Wu J, Walukiewicz W, Yu KM, Ager JW, Haller EE, Miotkowski I, Ramdas AK, Su C, Sou IK, Perera RCC, Denlinger JD. Origin of the large band-gap bowing in highly mismatched semiconductor alloys Physical Review B. 67. DOI: 10.1103/Physrevb.67.035207  0.576
2003 Li SX, Wu J, Haller EE, Walukiewicz W, Shan W, Lu H, Schaff WJ. Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys Applied Physics Letters. 83: 4963-4965. DOI: 10.1063/1.1633681  0.404
2003 Yu KM, Walukiewicz W, Wu J, Shan W, Beeman JW, Scarpulla MA, Dubon OD, Ridgway MC, Mars DE, Chamberlin DR. Mutual passivation of group IV donors and nitrogen in diluted GaN xAs1-x alloys Applied Physics Letters. 83: 2844-2846. DOI: 10.1063/1.1616980  0.401
2003 Wu J, Walukiewicz W, Shan W, Yu KM, Ager JW, Li SX, Haller EE, Lu H, Schaff WJ. Temperature dependence of the fundamental band gap of InN Journal of Applied Physics. 94: 4457-4460. DOI: 10.1063/1.1605815  0.594
2003 Lu H, Schaff WJ, Eastman LF, Wu J, Walukiewicz W, Cimalla V, Ambacher O. Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy Applied Physics Letters. 83: 1136-1138. DOI: 10.1063/1.1599634  0.368
2003 Yu KM, Walukiewicz W, Scarpulla MA, Dubon OD, Wu J, Jasinski J, Liliental-Weber Z, Beeman JW, Pillai MR, Aziz MJ. Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs Journal of Applied Physics. 94: 1043-1049. DOI: 10.1063/1.1582393  0.346
2003 Shan W, Walukiewicz W, Wu J, Yu KM, Ager JW, Li SX, Haller EE, Geisz JF, Friedman DJ, Kurtz SR. Band-gap bowing effects in BxGa1−xAs alloys Journal of Applied Physics. 93: 2696-2699. DOI: 10.1063/1.1540230  0.569
2003 Wojtowicz T, Lim WL, Liu X, Sasaki Y, Bindley U, Dobrowolska M, Furdyna JK, Yu KM, Walukiewicz W. Correlation of Mn lattice location, free hole concentration, and curie temperature in ferromagnetic GaMnAs Journal of Superconductivity. 16: 41-44. DOI: 10.1023/A:1023268214360  0.359
2003 Wu J, Walukiewicz W, Yu K, Ager J, Li S, Haller E, Lu H, Schaff WJ. Universal bandgap bowing in group-III nitride alloys Solid State Communications. 127: 411-414. DOI: 10.1016/S0038-1098(03)00457-5  0.533
2003 Wu J, Walukiewicz W. Band gaps of InN and group III nitride alloys Superlattices and Microstructures. 34: 63-75. DOI: 10.1016/J.Spmi.2004.03.069  0.418
2003 Scarpulla MA, Daud U, Yu KM, Monteiro O, Liliental-Weber Z, Zakharov D, Walukiewicz W, Dubon OD. Diluted magnetic semiconductors formed by ion implantation and pulsed-laser melting Physica B: Condensed Matter. 340: 908-912. DOI: 10.1016/J.Physb.2003.09.113  0.341
2003 Yu KM, Wu J, Walukiewicz W, Shan W, Beeman JW, Mars DE, Chamberlin DR, Scarpulla MA, Dubon OD, Ridgway MC, Geisz JF. Mutual passivation of group IV donors and isovalent nitrogen in diluted GaNxAs1-x alloys Physica B: Condensed Matter. 340: 389-393. DOI: 10.1016/J.Physb.2003.09.060  0.412
2003 Wu J, Walukiewicz W, Yu KM, Ager III JW, Haller EE, Lu H, Schaff WJ. Narrow bandgap group III-nitride alloys Physica Status Solidi (B). 240: 412-416. DOI: 10.1002/Pssb.200303475  0.564
2003 Walukiewicz W. Band anticrossing in highly mismatched semiconductor alloys Institute of Physics Conference Series. 171: 109-116.  0.331
2002 Yu KM, Walukiewicz W, Wu J, Mars DE, Chamberlin DR, Scarpulla MA, Dubon OD, Geisz JF. Mutual passivation of electrically active and isovalent impurities. Nature Materials. 1: 185-9. PMID 12618808 DOI: 10.1038/Nmat754  0.417
2002 Lu H, Schaff WJ, Eastman LF, Wu J, Walukiewicz W, Look DC, Molnar RJ. Growth of thick InN by molecular beam epitaxy Materials Research Society Symposium - Proceedings. 743: 317-322. DOI: 10.1557/Proc-743-L4.10  0.376
2002 Wu J, Walukiewicz W, Shan W, Yu KM, Ager JW, Haller EE, Lu H, Schaff WJ. Effects of the narrow band gap on the properties of InN Physical Review B. 66. DOI: 10.1103/Physrevb.66.201403  0.569
2002 Wu J, Walukiewicz W, Haller EE. Band structure of highly mismatched semiconductor alloys: Coherent potential approximation Physical Review B. 65. DOI: 10.1103/Physrevb.65.233210  0.554
2002 Yu KM, Walukiewicz W, Wojtowicz T, Kuryliszyn I, Liu X, Sasaki Y, Furdyna JK. Effect of the location of Mn sites in ferromagnetic GaMnAs on its Curie temperature Physical Review B. 65: 201303. DOI: 10.1103/Physrevb.65.201303  0.354
2002 Wu J, Shan W, Walukiewicz W. Band anticrossing in highly mismatched III-V semiconductor alloys Semiconductor Science and Technology. 17: 860-869. DOI: 10.1088/0268-1242/17/8/315  0.46
2002 Hwang J, Schaff WJ, Eastman LF, Bradley ST, Brillson LJ, Look DC, Wu J, Walukiewicz W, Furis M, Cartwright AN. Si doping of high-Al-mole fraction AlxGa1-xN alloys with rf plasma-induced molecular-beam-epitaxy Applied Physics Letters. 81: 5192-5194. DOI: 10.1063/1.1534395  0.398
2002 Wu J, Walukiewicz W, Yu KM, Ager JW, Haller EE, Lu H, Schaff WJ. Small band gap bowing in In1-xGaxN alloys Applied Physics Letters. 80: 4741-4743. DOI: 10.1063/1.1489481  0.532
2002 Wu J, Walukiewicz W, Yu KM, Ager JW, Haller EE, Lu H, Schaff WJ, Saito Y, Nanishi Y. Unusual properties of the fundamental band gap of InN Applied Physics Letters. 80: 3967-3969. DOI: 10.1063/1.1482786  0.561
2002 Yu KM, Walukiewicz W, Beeman JW, Scarpulla MA, Dubon OD, Pillai MR, Aziz MJ. Enhanced nitrogen incorporation by pulsed laser annealing of GaN xAs1-x formed by N ion implantation Applied Physics Letters. 80: 3958-3960. DOI: 10.1063/1.1481196  0.353
2002 Hsu L, Walukiewicz W. Transport-to-quantum lifetime ratios in AlGaN/GaN heterostructures Applied Physics Letters. 80: 2508-2510. DOI: 10.1063/1.1468260  0.325
2002 Knap W, Borovitskaya E, Shur MS, Hsu L, Walukiewicz W, Frayssinet E, Lorenzini P, Grandjean N, Skierbiszewski C, Prystawko P, Leszczynski M, Grzegory I. Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures Applied Physics Letters. 80: 1228-1230. DOI: 10.1063/1.1448401  0.416
2002 Wu J, Walukiewicz W, Yu KM, Ager JW, Shan W, Haller EE, Miotkowski I, Ramdas AK, Miotkowska S. Band anticrossing effects in MgyZn1−yTe1−xSex alloys Applied Physics Letters. 80: 34-36. DOI: 10.1063/1.1430853  0.525
2002 Yu KM, Wu J, Walukiewicz W, Beeman JW, Ager JW, Haller EE, Miotkowski I, Ramdas A. Band anticrossing in highly mismatched group II-VI semiconductor alloys Journal of Electronic Materials. 31: 754-758. DOI: 10.1007/S11664-002-0232-2  0.493
2001 Wu J, Shan W, Walukiewicz W, Yu KM, Ager JW, Haller EE, Xin HP, Tu CW. Effect of band anticrossing on the optical transitions inGaAs1−xNx/GaAsmultiple quantum wells Physical Review B. 64. DOI: 10.1103/Physrevb.64.085320  0.516
2001 Hsu L, Walukiewicz W. Effect of polarization fields on transport properties in AlGaN/GaN heterostructures Journal of Applied Physics. 89: 1783-1789. DOI: 10.1063/1.1339858  0.433
2001 Wu J, Walukiewicz W, Haller EE. Calculation of the ground state of shallow donors in GaAs1-xNx Journal of Applied Physics. 89: 789-791. DOI: 10.1063/1.1324999  0.438
2001 Jasinski J, Yu KM, Walukiewicz W, Liliental-Weber Z, Washburn J. Effects of structural defects on the activation of sulfur donors in GaNxAs1-x formed by N implantation Physica B: Condensed Matter. 308: 874-876. DOI: 10.1016/S0921-4526(01)00930-9  0.37
2001 Walukiewicz W. Intrinsic limitations to the doping of wide-gap semiconductors Physica B: Condensed Matter. 302: 123-134. DOI: 10.1016/S0921-4526(01)00417-3  0.471
2001 Dubon OD, Silvestri HH, Walukiewicz W, Haller EE. Hopping conduction through the 2s states of copper acceptors in uniaxially stressed germanium Solid State Communications. 117: 537-541. DOI: 10.1016/S0038-1098(00)00499-3  0.458
2001 Shan W, Walukiewicz W, Yu K, Ager III J, Haller E, Geisz J, Friedman D, Olson J, Kurtz S, Xin H, Tu C. Band Anticrossing in III-N-V Alloys Physica Status Solidi (B). 223: 75-85. DOI: 10.1002/1521-3951(200101)223:1<75::Aid-Pssb75>3.0.Co;2-1  0.572
2000 Bracht H, Nicols SP, Walukiewicz W, Silveira JP, Briones F, Haller EE. Large disparity between gallium and antimony self-diffusion in gallium antimonide Nature. 408: 69-72. PMID 11081507 DOI: 10.1038/35040526  0.44
2000 Walukiewicz W, Shan W, Yu KM, Ager JW, Haller EE, Miotkowski I, Seong MJ, Alawadhi H, Ramdas AK. Interaction of localized electronic states with the conduction band: band anticrossing in II-VI semiconductor ternaries Physical Review Letters. 85: 1552-5. PMID 10970552 DOI: 10.1103/Physrevlett.85.1552  0.579
2000 Yu KM, Walukiewicz W, Shan W, Wu J, Beeman JW, Ager JW, Haller EE, Ridgway MC. Synthesis of III-Nx-V1-x Thin Films by N Ion Implantation Mrs Proceedings. 650. DOI: 10.1557/Proc-650-R8.3/O13.3  0.503
2000 Walukiewicz W. Electronic structure of highly mismatched semiconductor alloys Ieee Semiconducting and Semi-Insulating Materials Conference, Simc. 2000: 252-259. DOI: 10.1109/SIM.2000.939238  0.309
2000 Shan W, Walukiewicz W, Yu KM, Ager JW, Haller EE, Geisz JF, Friedman DJ, Olson JM, Kurtz SR, Nauka C. Effect of nitrogen on the electronic band structure of group III-N-V alloys Physical Review B. 62: 4211-4214. DOI: 10.1103/Physrevb.62.4211  0.552
2000 Mikucki J, Baj M, Wasik D, Walukiewicz W, Bi WG, Tu CW. Metastability of the phosphorus antisite defect in low-temperature InP Physical Review B - Condensed Matter and Materials Physics. 61: 7199-7202. DOI: 10.1103/Physrevb.61.7199  0.36
2000 Siwiec J, Mikucki J, Baj M, Walukiewicz W, Bi WG, Tu CW. Pressure reduction of parasitic parallel conduction in InGaAs/InP heterostructures containing LT-InP layers High Pressure Research. 18: 75-80. DOI: 10.1080/08957950008200951  0.348
2000 Perlin P, Wiśniewski P, Skierbiszewski C, Suski T, Kamińska E, Subramanya SG, Weber ER, Mars DE, Walukiewicz W. Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01 Applied Physics Letters. 76: 1279-1281. DOI: 10.1063/1.126008  0.455
2000 Suemune I, Uesugi K, Walukiewicz W. Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs Applied Physics Letters. 77: 3021-3023.  0.318
1999 Shan W, Ager J, Walukiewicz W, Haller E, McCluskey M, Johnson N, Bour D. Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells Mrs Internet Journal of Nitride Semiconductor Research. 4: 191-196. DOI: 10.1557/S1092578300002441  0.474
1999 Shan W, Walukiewicz W, Ager JW, Haller EE, Geisz JF, Friedman DJ, Olson JM, Kurtz SR. Band Anticrossing in GaInNAs Alloys Physical Review Letters. 82: 1221-1224. DOI: 10.1103/Physrevlett.82.1221  0.571
1999 Yu KM, Walukiewicz W, Muto S, Jin H, Abelson JR, Clerc C, Glover CJ, Ridgway MC. Local structures of Ga atoms in amorphous silicon and hydrogenated amorphous silicon before and after synchrotron x-ray irradiation Applied Physics Letters. 75: 3282-3284. DOI: 10.1063/1.125325  0.326
1999 Shan W, Yu KM, Walukiewicz W, Ager JW, Haller EE, Ridgway MC. Reduction of band-gap energy in GaNAs and AlGaNAs synthesized by N+ implantation Applied Physics Letters. 75: 1410-1412. DOI: 10.1063/1.124951  0.425
1999 Yu KM, Walukiewicz W, Muto S, Jin HC, Abelson JR. The effects of x-ray induced structural changes on the microstructure of a-Si after thermal crystallization Applied Physics Letters. 75: 2032-2034. DOI: 10.1063/1.124906  0.331
1999 Hsu L, Walukiewicz W. Theoretical transport studies of p-type GaN/AlGaN modulation-doped heterostructures Applied Physics Letters. 74: 2405-2407. DOI: 10.1063/1.123897  0.371
1999 Suski T, Perlin P, Skierbiszewski C, Wisniewski P, Dmowski L, Leszczynski M, Walukiewicz W. Pressure studies of defects and impurities in nitrides Physica Status Solidi (B) Basic Research. 216: 521-528. DOI: 10.1002/(Sici)1521-3951(199911)216:1<521::Aid-Pssb521>3.0.Co;2-3  0.403
1999 Skierbiszewski C, Perlin P, Wisniewski P, Suski T, Walukiewicz W, Shan W, Ager J, Haller E, Geisz J, Friedman D, Olson J, Kurtz S. Effect of Nitrogen-Induced Modification of the Conduction Band Structure on Electron Transport in GaAsN Alloys Physica Status Solidi (B). 216: 135-139. DOI: 10.1002/(Sici)1521-3951(199911)216:1<135::Aid-Pssb135>3.0.Co;2-#  0.571
1999 Shan W, Ager JW, Walukiewicz W, Haller EE. Optical processes in InxGa1-xN epitaxial films grown by metalorganic chemical vapor deposition Ieee Semiconducting and Semi-Insulating Materials Conference, Simc. 243-246.  0.35
1998 Walukiewicz W, Hsu L, Haller EE. Two-Dimensional Electronic Transport in AlGaN/GaN Heterostructures Materials Science Forum. 1449-1454. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.1449  0.465
1998 Mccluskey MD, Johnson NM, Van De Walle CG, Bour DP, Kneissl M, Walukiewicz W. Evidence for Oxygen DX Centers in AlGaN Mrs Proceedings. 512. DOI: 10.1557/Proc-512-531  0.403
1998 Muto S, Kobayashi Y, Yu KM, Walukiewicz W, Echer CJ, McCormick S, Abelson JR. The Influence of X-Ray Irradiation on Structural Relaxation and Crystallization of Amorphous Silicon Films Japanese Journal of Applied Physics. 37: 5890-5893. DOI: 10.1143/Jjap.37.5890  0.329
1998 Hsu L, Walukiewicz W. Effects of piezoelectric field on defect formation, charge transfer, and electron transport at GaN/AlxGa1-xN interfaces Applied Physics Letters. 73: 339-341. DOI: 10.1063/1.121827  0.428
1998 McCluskey M, Haller E, Walukiewicz W, Becla P. Anti-crossing behavior of local vibrational modes in AlSb Solid State Communications. 106: 587-590. DOI: 10.1016/S0038-1098(98)00095-7  0.411
1998 Walukiewicz W, Dubon OD, Silvestri HH, Haller EE. Hole transport in the upper hubbard band in Cu-doped germanium under uniaxial pressure Physica Status Solidi (B) Basic Research. 210: 253-262. DOI: 10.1002/(Sici)1521-3951(199812)210:2<253::Aid-Pssb253>3.0.Co;2-0  0.412
1998 Walukiewicz W, Hsu L, Haller EE. Two-dimensional electronic transport in AlGaN/GaN heterostructures Materials Science Forum. 264: 1449-1452.  0.31
1997 Wasik D, Dmowski L, Mikucki J, Lusakowski J, Hsu L, Walukiewicz W, Bi WG, Tu CW. Pressure Dependent Two-Dimensional Electron Transport in Defect Doped InGaAs/InP Heterostructures Materials Science Forum. 813-818. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.813  0.378
1997 Itoh KM, Kinoshita T, Walukiewicz W, Beeman JW, Haller EE, Muto J, Farmer JW, Ozhogin VI. Ionized Impurity Scattering in Isotopically Engineered, Compensated Ge:Ga,As Materials Science Forum. 77-82. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.77  0.448
1997 Hsu L, Walukiewicz W, Haller EE. Defect Formation and Electronic Transport at AlGaN/GaN Interfaces Materials Science Forum. 1749-1754. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.1749  0.497
1997 Shan W, Ager JW, Walukiewicz W, Haller EE, Little BD, Song JJ, Goldenberg B, Feng ZC, Schurman M, Stall RA. High Pressure Study of III-Nitrides and Related Heterostructures Mrs Proceedings. 499. DOI: 10.1557/Proc-499-361  0.53
1997 Bracht H, Walukiewicz W, Haller EE. Modeling of Atom Diffusion and Segregation in Semiconductor Heterostructures Mrs Proceedings. 490. DOI: 10.1557/Proc-490-93  0.508
1997 Hirsch MT, Seiferta O, Kirfel O, Parisia J, Wolk JA, Walukiewicz W, Haller EE, Ambacher O, Stutzmann M. Photoquenching Of Persistent Photoconductivity In N-Type GaN Mrs Proceedings. 482. DOI: 10.1557/Proc-482-531  0.506
1997 Yu KM, Wang L, Walukiewicz W, Muto S, McCormick S, Abelson JR. Effects of synchrotron x-rays on PVD deposited and ion implanted α-Si Materials Research Society Symposium - Proceedings. 467: 355-360. DOI: 10.1557/Proc-467-355  0.345
1997 Walukiewicz W, Hsu L, Redwing JM. Intrinsic mobility limits of a two-dimensional electron gas in AlGaN/GaN heterostructures Materials Research Society Symposium - Proceedings. 449: 573-578. DOI: 10.1557/Proc-449-573  0.407
1997 Itoh KM, Kinoshita T, Muto J, Haegel NM, Walukiewicz W, Dubon OD, Beeman JW, Haller EE. Carrier scattering by neutral divalent impurities in semiconductors: Theory and experiment Physical Review B. 56: 1906-1910. DOI: 10.1103/Physrevb.56.1906  0.501
1997 Hsu L, Walukiewicz W. Electron mobility in Al x Ga 1 − x N / G a N heterostructures Physical Review B. 56: 1520-1528. DOI: 10.1103/Physrevb.56.1520  0.333
1997 Wetzel C, Walukiewicz W, Ager JW. Electron-phonon scattering in Si-doped GaN Materials Research Society Symposium - Proceedings. 449: 567-572.  0.311
1997 Hsu L, Walukiewicz W, Haller EE. Defect formation and electronic transport at AlGaN/GaN interfaces Materials Science Forum. 258: 1749-1754.  0.31
1996 Wetzel C, Walukiewicz W, Haller EE, Ager J, Grzegory I, Porowski S, Suski T. Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure. Physical Review. B, Condensed Matter. 53: 1322-1326. PMID 9983591 DOI: 10.1103/Physrevb.53.1322  0.501
1996 McCluskey MD, Haller EE, Walukiewicz W, Becla P. Hydrogen passivation of Se and Te in AlSb. Physical Review. B, Condensed Matter. 53: 16297-16301. PMID 9983466 DOI: 10.1103/Physrevb.53.16297  0.339
1996 Itoh KM, Muto J, Walukiewicz W, Beeman JW, Haller EE, Kim H, Mayur AJ, Sciacca MD, Ramdas AK, Buczko R, Farmer JW, Ozhogin VI. Evidence for correlated hole distribution in neutron-transmutation-doped isotopically controlled germanium. Physical Review. B, Condensed Matter. 53: 7797-7804. PMID 9982226 DOI: 10.1103/Physrevb.53.7797  0.49
1996 Hsu L, Walukiewicz W. Electron scattering by native defects in III-V nitrides and their alloys Materials Research Society Symposium - Proceedings. 423: 513-518. DOI: 10.1557/Proc-423-513  0.434
1996 Walukiewicz W, Liliental‐Weber Z, Jasinski J, Almonte M, Prasad A, Haller EE, Weber ER, Grenier P, Whitaker JF. High resistivity and ultrafast carrier lifetime in argon implanted GaAs Applied Physics Letters. 69: 2569-2571. DOI: 10.1063/1.117702  0.485
1996 Walukiewicz W. Activation of shallow dopants in II-VI compounds Journal of Crystal Growth. 159: 244-247. DOI: 10.1016/0022-0248(95)00839-X  0.363
1996 Wetzel C, Chen AL, Suski T, Ager JW, Walukiewicz W. Si in GaN - On the nature of the background donor Physica Status Solidi (B) Basic Research. 198: 243-249. DOI: 10.1002/Pssb.2221980132  0.374
1996 Fischer S, Wetzel C, Walukiewicz W, Haller EE. Fine structure of the 3.42 eV emission band in GaN Materials Research Society Symposium - Proceedings. 395: 571-576.  0.33
1995 Fuchs HD, Walukiewicz W, Haller EE, Dondl W, Schorer R, Abstreiter G, Rudnev AI, Tikhomirov AV, Ozhogin VI. Germanium 70Ge/74Ge isotope heterostructures: An approach to self-diffusion studies. Physical Review B. 51: 16817-16821. PMID 9978690 DOI: 10.1103/Physrevb.51.16817  0.417
1995 Wetzel C, Walukiewicz W, Haller EE. Carrier Localization in Gallium Nitride Materials Science Forum. 31-36. DOI: 10.4028/Www.Scientific.Net/Msf.196-201.31  0.531
1995 Fischer S, Wetzel C, Walukiewicz W, Haller E. Fine Structure of the 3.42 eV Emission Band in GaN Mrs Proceedings. 395. DOI: 10.1557/Proc-395-571  0.564
1995 Wetzel C, Fischer S, Walukiewicz W, Ager III J, Haller E, Grzegory I, Porowski S, Suski T. Defect Studies of GaN under Large Hydrostatic Pressure Mrs Proceedings. 395. DOI: 10.1557/Proc-395-417  0.542
1995 Wetzel C, Walukiewicz W, Haller EE, Amano H, Akasaki I. Photoluminescence Studies of GaN and AlGaN Layers Under Hydrostatic Pressure Mrs Proceedings. 378. DOI: 10.1557/Proc-378-509  0.569
1995 Becla P, Witt AG, Lagowski J, Walukiewicz W. Large persistent photochromic effect due to DX centers in ALSB doped with selenium Materials Research Society Symposium - Proceedings. 378: 47-52. DOI: 10.1557/Proc-378-47  0.437
1995 Stallinga P, Walukiewicz W, Weber ER, Becla P, Lagowski J. Electron Paramagnetic Resonance Study of Se-Doped AlSb: Evidence for Negative-U of the DX Center Acta Physica Polonica A. 88: 1043-1047. DOI: 10.12693/Aphyspola.88.1043  0.358
1995 McKenna JM, Nolte DD, Walukiewicz W, Becla P. Persistent holographic absorption gratings in AlSb:Se Applied Physics Letters. 735. DOI: 10.1063/1.116725  0.364
1995 Chen AL, Walukiewicz W, Duxstad K, Haller EE. Migration of compensating defects in p-type ZnSe during annealing Applied Physics Letters. 1522. DOI: 10.1063/1.115686  0.52
1995 Liu X, Prasad A, Nishio J, Weber ER, Liliental-Weber Z, Walukiewicz W. Native point defects in low-temperature-grown GaAs Applied Physics Letters. 67: 279. DOI: 10.1063/1.114782  0.438
1995 Becla P, Witt A, Lagowski J, Walukiewicz W. Large photoinduced persistent optical absorption in selenium doped AlSb Applied Physics Letters. 67: 395. DOI: 10.1063/1.114640  0.452
1995 Ager JW, Walukiewicz W, McCluskey M, Plano MA, Landstrass MI. Fano interference of the Raman phonon in heavily boron-doped diamond films grown by chemical vapor deposition Applied Physics Letters. 616. DOI: 10.1063/1.114031  0.318
1995 Itoh K, Walukiewicz W, Beeman J, Haller E, Farmer J, Ozhogin V. Compensation dependence of Ga impurity absorption spectra in highly compensated Ge: Ga, As Solid State Communications. 93: 456. DOI: 10.1016/0038-1098(95)80015-8  0.459
1995 Wetzel C, Walukiewicz W, Haller EE, Amano H, Akasaki I. Photoluminescence studies of GaN and AlGaN layers under hydrostatic pressure Materials Research Society Symposium - Proceedings. 378: 509-514.  0.336
1994 Dreszer P, Chen WM, Wasik D, Walukiewicz W, Liang BW, Tu CW, Weber ER. Properties of resonant localized donor level in low-temperature-grown InP Materials Science Forum. 143: 1081-1086. DOI: 10.4028/Www.Scientific.Net/Msf.143-147.1081  0.43
1994 Itoh KM, Walukiewicz W, Fuchs HD, Beeman JW, Haller EE, Farmer JW, Ozhogin VI. Neutral-impurity scattering in isotopically engineered Ge Physical Review B. 50: 16995-17000. DOI: 10.1103/Physrevb.50.16995  0.5
1994 Chen WM, Dreszer P, Prasad A, Kurpiewski A, Walukiewicz W, Weber ER, Sörman E, Monemar B, Liang BW, Tu CW. Origin of n‐type conductivity of low‐temperature grown InP Journal of Applied Physics. 76: 600-602. DOI: 10.1063/1.357052  0.389
1994 Chen AL, Walukiewicz W, Haller EE. Pressure dependence of the photoluminescence spectra of nitrogen-doped ZnSe: Evidence of compensating deep donors Applied Physics Letters. 65: 1006-1008. DOI: 10.1063/1.112207  0.508
1994 Moll AJ, Haller EE, Ager JW, Walukiewicz W. Direct evidence of carbon precipitates in GaAs and InP Applied Physics Letters. 65: 1145-1147. DOI: 10.1063/1.112123  0.404
1994 Wolk J, Ager J, Duxstad K, Walukiewicz W, Haller E, Taskar N, Dorman D, Olega D. The nitrogen-hydrogen complex in ZnSe Journal of Crystal Growth. 138: 1071-1072. DOI: 10.1016/0022-0248(94)90958-X  0.371
1993 Dreszer P, Chen WM, Seendripu K, Wolk JA, Walukiewicz W, Liang BW, Tu CW, Weber ER. Phosphorus antisite defects in low-temperature InP. Physical Review B. 47: 4111-4114. PMID 10006545 DOI: 10.1103/Physrevb.47.4111  0.441
1993 Walukiewicz W. Application of the amphoteric native defect model to diffusion and activation of shallow impurities in III-V semiconductors Materials Research Society Symposium Proceedings. 300: -432. DOI: 10.1557/Proc-300-421  0.419
1993 Moll AJ, Ager JW, Yu KM, Walukiewicz W, Haller EE. The effect of coimplantation on the electrical activity of implanted carbon in GaAs Journal of Applied Physics. 74: 7118-7123. DOI: 10.1063/1.355027  0.349
1993 Dreszer P, Chen WM, Wasik D, Leon R, Walukiewicz W, Liang BW, Tu CW, Weber ER. Electronic properties of low-temperature InP Journal of Electronic Materials. 22: 1487-1490. DOI: 10.1007/Bf02650004  0.475
1993 Bliss DE, Walukiewicz W, Haller EE. Annealing of AsGa-related defects in LT-GaAs: The role of gallium vacancies Journal of Electronic Materials. 22: 1401-1404. DOI: 10.1007/BF02649985  0.478
1992 Krambrock K, Linde M, Spaeth JM, Look DC, Bliss D, Walukiewicz W. Arsenic antisite-related defects in low-temperature MBE grown GaAs Semiconductor Science and Technology. 7: 1037-1041. DOI: 10.1088/0268-1242/7/8/002  0.389
1992 Bliss DE, Walukiewicz W, Ager JW, Haller EE, Chan KT, Tanigawa S. Annealing studies of low-temperature-grown GaAs:Be Journal of Applied Physics. 71: 1699-1707. DOI: 10.1063/1.351200  0.514
1992 Moll AJ, Yu KM, Walukiewicz W, Hansen WL, Haller EE. Coimplantation and electrical activity of C in GaAs: Stoichiometry and damage effects Applied Physics Letters. 60: 2383-2385. DOI: 10.1063/1.107004  0.374
1991 Wolk JA, Kruger MB, Heyman JN, Walukiewicz W, Jeanloz R, Haller EE. Observation of a local vibrational mode of DX centres in Si doped GaAs Semiconductor Science and Technology. 6: B78-B83. DOI: 10.1088/0268-1242/6/10B/015  0.377
1991 Moll AJ, Walukiewicz W, Yu KM, Hansen WL, Haller EE. The Effect of Co-Implantation on the Electrical Activity of Implanted Carbon in GaAs Mrs Proceedings. 240. DOI: 10.1063/1.355027  0.427
1991 Walukiewicz W, Haller EE. Effect of scattering by native defects on electron mobility in modulation-doped heterostructures Applied Physics Letters. 58: 1638-1640. DOI: 10.1063/1.105150  0.494
1990 Bliss DE, Nolte DD, Walukiewicz W, Haller EE, Lagowski J. Absolute pressure dependence of the second ionization level of EL2 in GaAs Applied Physics Letters. 56: 1143-1145. DOI: 10.1557/Proc-163-815  0.504
1989 Hoinkis M, Weber ER, Walukiewicz W, Lagowski J, Matsui M, Gatos HC, Meyer BK, Spaeth JM. Unification of the properties of the EL2 defect in GaAs. Physical Review. B, Condensed Matter. 39: 5538-5541. PMID 9948957 DOI: 10.1103/Physrevb.39.5538  0.774
1989 Hamera M, Walukiewicz W, Nolte DD, Haller EE. Dependence of transition-metal impurity levels on host composition in III-V semiconductors. Physical Review. B, Condensed Matter. 39: 10114-10119. PMID 9947790 DOI: 10.1103/Physrevb.39.10114  0.502
1989 Walukiewicz W. Amphoteric native defects in semiconductors Applied Physics Letters. 54: 2094-2096. DOI: 10.1063/1.101174  0.378
1988 Nolte DD, Walukiewicz W, Haller EE. Comment on volume relaxation around defects in silicon upon electron emission. Physical Review. B, Condensed Matter. 38: 6316-6317. PMID 9947100 DOI: 10.1103/Physrevb.38.6316  0.537
1988 Walukiewicz W. Acoustic-phonon scattering in modulation-doped heterostructures Physical Review B. 37: 8530-8533. DOI: 10.1103/Physrevb.37.8530  0.42
1987 Nolte DD, Walukiewicz W, Haller EE. Band-edge hydrostatic deformation potentials in III-V semiconductors. Physical Review Letters. 59: 501-504. PMID 10035785 DOI: 10.1103/Physrevlett.59.501  0.555
1987 Nolte DD, Walukiewicz W, Haller EE. Deep-level defects in silicon and the band-edge hydrostatic deformation potentials. Physical Review. B, Condensed Matter. 36: 9392-9394. PMID 9942829 DOI: 10.1103/Physrevb.36.9392  0.556
1987 Nolte DD, Walukiewicz W, Haller EE. Critical criterion for axial models of defects in as-grown n-type GaAs. Physical Review. B, Condensed Matter. 36: 9374-9377. PMID 9942824 DOI: 10.1103/Physrevb.36.9374  0.48
1987 Nolte DD, Walukiewicz W, Haller EE. Deep-level defects in silicon and the band-edge hydrostatic deformation potentials Physical Review B. 36: 9392-9394. DOI: 10.1103/PhysRevB.36.9392  0.319
1987 Yu KM, Walukiewicz W, Jaklevic JM, Haller EE, Sands T. Effects of interface reactions on electrical characteristics of metal-GaAs contacts Applied Physics Letters. 51: 189-191. DOI: 10.1063/1.98918  0.429
1986 Walukiewicz W, Wang L, Pawlowicz LM, Lagowski J, Gatos HC. Effects of macroscopic inhomogeneities on electron mobility in semi-insulating GaAs Journal of Applied Physics. 59: 3144-3147. DOI: 10.1063/1.336893  0.416
1985 Walukiewicz W, Ruda HE, Lagowski J, Gatos HC. Response to Comment on Electron mobility in modulation-doped heterostructuresa Physical Review B. 32: 2645-2646. DOI: 10.1103/PhysRevB.32.2645  0.767
1985 Walukiewicz W. Hole mobility in modulation-doped heterostructures: GaAs-AlGaAs Physical Review B. 31: 5557-5560. DOI: 10.1103/Physrevb.31.5557  0.383
1984 Walukiewicz W, Ruda HE, Lagowski J, Gatos HC. Electron mobility in modulation-doped heterostructures Physical Review B. 30: 4571-4582. DOI: 10.1103/Physrevb.30.4571  0.583
1984 Walukiewicz W, Ruda HE, Lagowski J, Gatos HC. Electron mobility limits in a two-dimensional electron gas: GaAs-GaAlAs heterostructures Physical Review B. 29: 4818-4820. DOI: 10.1103/Physrevb.29.4818  0.575
1984 Walukiewicz W, Wang L, Pawlowicz L, Lagowski J, Gatos HC. EFFECT OF DEEP LEVEL IONIZATION ON LOW TEMPERATURE ELECTRON MOBILITY IN SI GAAS . 255-262.  0.307
1983 Walukiewicz W, Lagowski J, Gatos HC. On the optical evaluation of the EL2 deep level concentration in semi-insulating GaAs Applied Physics Letters. 43: 192-194. DOI: 10.1063/1.94277  0.379
1983 Walukiewicz W, Lagowski J, Gatos HC. Shallow donor associated with the main electron trap (EL2) in melt-grown GaAs Applied Physics Letters. 43: 112-114. DOI: 10.1063/1.94147  0.409
1982 Lagowski J, Gatos HC, Parsey JM, Wada K, Kaminska M, Walukiewicz W. Origin of the 0.82‐eV electron trap in GaAs and its annihilation by shallow donors Applied Physics Letters. 40: 342-344. DOI: 10.1063/1.93092  0.421
1982 Walukiewicz W, Lagowski J, Gatos HC. Electron mobility in n-type GaAs at 77 K: Determination of the compensation ratio Journal of Applied Physics. 53: 769-770. DOI: 10.1063/1.329986  0.348
1981 Lagowski J, Walukiewicz W, Kazior TE, Gatos HC, Siejka J. GaAs-oxide interface states: A gigantic photoionization effect and its implications to the origin of these states Applied Physics Letters. 39: 240-242. DOI: 10.1063/1.92693  0.354
1981 Walukiewicz W, Lagowski J, Gatos HC. Reassessment of space-charge and central-cell scattering contributions to GaAs electron mobility Journal of Applied Physics. 52: 5853-5854. DOI: 10.1063/1.329483  0.354
1980 Jastrzebski L, Lagowski J, Walukiewicz W, Gatos HC. Determination of carrier concentration and compensation microprofiles in GaAs Journal of Applied Physics. 51: 2301-2303. DOI: 10.1063/1.327867  0.424
1979 Walukiewicz W, Lagowski J, Jastrzebski L, Rava P, Lichtensteiger M, Gatos CH, Gatos HC. Electron mobility and free‐carrier absorption in InP; determination of the compensation ratio Journal of Applied Physics. 51: 2659-2668. DOI: 10.1063/1.327925  0.389
1979 Lagowski J, Walukiewicz W, Slusarczuk MMG, Gatos HC. Derivative surface photovoltage spectroscopy; A new approach to the study of absorption in semiconductors: GaAs Journal of Applied Physics. 50: 5059-5061. DOI: 10.1063/1.325610  0.377
1979 Walukiewicz W, Lagowski J, Jastrzebski L, Gatos HC. Minority-carrier mobility in p-type GaAs Journal of Applied Physics. 50: 5040-5042. DOI: 10.1063/1.325602  0.368
1974 Walukiewicz W. Resonant scattering of electrons in mercury telluride Physical Review Letters. 33: 650-652. DOI: 10.1103/PhysRevLett.33.650  0.319
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