☰

Troy J. Baker, Ph.D. - Publications

Affiliations: 
2006 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering
Tree Info Similar researchers PubMed Report error

12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2010 Masui H, Kamber DS, Brinkley SE, Wu F, Baker TJ, Zhong H, Iza M, Speck JS, Nakamura S, Denbaars SP. Spontaneous formation of {1 1̄ 0 1} InGaN quantum wells on a (1 1 2̄ 2) GaN template and their electroluminescence characteristics Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/1/015003  0.758
2009 Newman SA, Kamber DS, Baker TJ, Wu Y, Wu F, Chen Z, Namakura S, Speck JS, Denbaars SP. Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy Applied Physics Letters. 94. DOI: 10.1063/1.3089253  0.714
2008 Saito M, Kamber DS, Baker TJ, Fujito K, DenBaars SP, Speck JS, Nakamura S. Plane dependent growth of GaN in supercritical basic ammonia Applied Physics Express. 1: 1211031-1211033. DOI: 10.1143/Apex.1.121103  0.725
2007 Fujii K, Iwaki Y, Masui H, Baker TJ, Iza M, Sato H, Kaeding J, Yao T, Speck JS, DenBaars SP, Nakamura S, Ohkawa K. Photoelectrochemical Properties of Nonpolar and Semipolar GaN Japanese Journal of Applied Physics. 46: 6573-6578. DOI: 10.1143/Jjap.46.6573  0.711
2007 Hirai A, Haskell BA, McLaurin MB, Wu F, Schmidt MC, Kim KC, Baker TJ, Denbaars SP, Nakamura S, Speck JS. Defect-mediated surface morphology of nonpolar m -plane GaN Applied Physics Letters. 90. DOI: 10.1063/1.2715126  0.448
2006 Sharma R, Pattison PM, Baker TJ, Haskell BA, Farrell RM, Masui H, Wu F, Denbaars SP, Speck JS, Nakamura S. A semipolar (101̄ 3̄) InGaN/GaN green light emitting diode Materials Research Society Symposium Proceedings. 892: 465-470. DOI: 10.1557/Proc-0892-Ff19-02  0.74
2006 Masui H, Baker TJ, Sharma R, Pattison PM, Iza M, Zhong H, Nakamura S, DenBaars SP. First-moment analysis of polarized light emission from InGaN/GaN light-emitting diodes prepared on semipolar planes Japanese Journal of Applied Physics, Part 2: Letters. 45. DOI: 10.1143/Jjap.45.L904  0.723
2006 Masui H, Baker TJ, Iza M, Zhong H, Nakamura S, DenBaars SP. Light-polarization characteristics of electroluminescence from InGaN∕GaN light-emitting diodes prepared on (1122)-plane GaN Journal of Applied Physics. 100: 113109. DOI: 10.1063/1.2382667  0.613
2006 Romanov AE, Baker TJ, Nakamura S, Speck JS. Strain-induced polarization in wurtzite III-nitride semipolar layers Journal of Applied Physics. 100. DOI: 10.1063/1.2218385  0.488
2005 Chakraborty A, Baker TJ, Haskell BA, Wu F, Speck JS, Denbaars SP, Nakamura S, Mishra UK. Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates Japanese Journal of Applied Physics, Part 2: Letters. 44: L945-L947. DOI: 10.1143/Jjap.44.L945  0.619
2005 Baker TJ, Haskell BA, Wu F, Fini PT, Speck JS, Nakamura S. Characterization of planar semipolar gallium nitride films on spinel substrates Japanese Journal of Applied Physics, Part 2: Letters. 44: L920-L922. DOI: 10.1143/Jjap.44.L920  0.493
2005 Sharma R, Pattison PM, Masui H, Farrell RM, Baker TJ, Haskell BA, Wu F, Denbaars SP, Speck JS, Nakamura S. Demonstration of a semipolar (10 1- 3-) InGaN/GaN green light emitting diode Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2139841  0.746
Show low-probability matches.