| Year |
Citation |
Score |
| 2022 |
Rousseau A, Valvin P, Desrat W, Xue L, Li J, Edgar JH, Cassabois G, Gil B. Bernal Boron Nitride Crystals Identified by Deep-Ultraviolet Cryomicroscopy. Acs Nano. PMID 35099926 DOI: 10.1021/acsnano.1c09717 |
0.3 |
|
| 2021 |
Li J, Wang J, Zhang X, Elias C, Ye G, Evans D, Eda G, Redwing JM, Cassabois G, Gil B, Valvin P, He R, Liu B, Edgar JH. Hexagonal Boron Nitride Crystal Growth from Iron, a Single Component Flux. Acs Nano. PMID 33818058 DOI: 10.1021/acsnano.1c00115 |
0.385 |
|
| 2020 |
Cai Q, Scullion D, Gan W, Falin A, Cizek P, Liu S, Edgar JH, Liu R, Cowie BCC, Santos EJG, Li LH. Outstanding Thermal Conductivity of Single Atomic Layer Isotope-Modified Boron Nitride. Physical Review Letters. 125: 085902. PMID 32909783 DOI: 10.1103/Physrevlett.125.085902 |
0.32 |
|
| 2020 |
Cuscó R, Edgar JH, Liu S, Li J, Artús L. Isotopic Disorder: The Prevailing Mechanism in Limiting the Phonon Lifetime in Hexagonal BN. Physical Review Letters. 124: 167402. PMID 32383900 DOI: 10.1103/Physrevlett.124.167402 |
0.302 |
|
| 2020 |
Sonntag J, Li J, Plaud A, Loiseau A, Barjon J, Edgar JH, Stampfer C. Excellent electronic transport in heterostructures of graphene and monoisotopic boron-nitride grown at atmospheric pressure Arxiv: Mesoscale and Nanoscale Physics. 7: 31009. DOI: 10.1088/2053-1583/Ab89E5 |
0.352 |
|
| 2020 |
Haseman MS, Noesges BA, Shields S, Cetnar JS, Reed AN, Al-Atabi HA, Edgar JH, Brillson LJ. Cathodoluminescence and x-ray photoelectron spectroscopy of ScN: Dopant, defects, and band structure Apl Materials. 8: 081103. DOI: 10.1063/5.0019533 |
0.344 |
|
| 2020 |
Valvin P, Pelini T, Cassabois G, Zobelli A, Li J, Edgar JH, Gil B. Deep ultraviolet hyperspectral cryomicroscopy in boron nitride: Photoluminescence in crystals with an ultra-low defect density Aip Advances. 10: 075025. DOI: 10.1063/5.0013121 |
0.41 |
|
| 2020 |
McKay MA, Wang QW, Al-Atabi HA, Yan YQ, Li J, Edgar JH, Lin JY, Jiang HX. Band structure and infrared optical transitions in ErN Applied Physics Letters. 116: 171104. DOI: 10.1063/5.0006312 |
0.343 |
|
| 2020 |
Al-Atabi H, Zheng Q, Cetnar JS, Look D, Cahill DG, Edgar JH. Properties of bulk scandium nitride crystals grown by physical vapor transport Applied Physics Letters. 116: 132103. DOI: 10.1063/1.5141808 |
0.509 |
|
| 2020 |
Li J, Elias C, Ye G, Evans D, Liu S, He R, Cassabois G, Gil B, Valvin P, Liu B, Edgar JH. Single crystal growth of monoisotopic hexagonal boron nitride from a Fe–Cr flux Journal of Materials Chemistry C. 8: 9931-9935. DOI: 10.1039/D0Tc02143A |
0.442 |
|
| 2020 |
Li J, Yuan C, Elias C, Wang J, Zhang X, Ye G, Huang C, Kuball M, Eda G, Redwing JM, He R, Cassabois G, Gil B, Valvin P, Pelini T, ... ... Edgar JH, et al. Hexagonal Boron Nitride Single Crystal Growth from Solution with a Temperature Gradient Chemistry of Materials. 32: 5066-5072. DOI: 10.1021/Acs.Chemmater.0C00830 |
0.415 |
|
| 2019 |
Fali A, White ST, Folland T, He M, Aghamiri NA, Liu S, Edgar JH, Caldwell JD, Haglund RF, Abate Y. Refractive Index-Based Control of Hyperbolic Phonon-Polariton Propagation. Nano Letters. PMID 31650843 DOI: 10.1021/Acs.Nanolett.9B02651 |
0.311 |
|
| 2019 |
Xiong L, Forsythe C, Jung M, McLeod AS, Sunku SS, Shao YM, Ni GX, Sternbach AJ, Liu S, Edgar JH, Mele EJ, Fogler MM, Shvets G, Dean CR, Basov DN. Photonic crystal for graphene plasmons. Nature Communications. 10: 4780. PMID 31636265 DOI: 10.1038/S41467-019-12778-2 |
0.393 |
|
| 2019 |
Liu S, Comer J, van Duin ACT, van Duin DM, Liu B, Edgar JH. Predicting the preferred morphology of hexagonal boron nitride domain structure on nickel from ReaxFF-based molecular dynamics simulations. Nanoscale. PMID 30860524 DOI: 10.1039/C8Nr10291K |
0.316 |
|
| 2019 |
Khan N, Nour E, Mondoux J, Liu S, Edgar JH, Berta Y. Hexagonal Boron Nitride Single Crystal Thermal Oxidation and Etching in Air: An Atomic Force Microscopy Study Mrs Advances. 4: 601-608. DOI: 10.1557/Adv.2018.667 |
0.376 |
|
| 2019 |
Pelini T, Elias C, Page R, Xue L, Liu S, Li J, Edgar JH, Dréau A, Jacques V, Valvin P, Gil B, Cassabois G. Shallow and deep levels in carbon-doped hexagonal boron nitride crystals Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.094001 |
0.404 |
|
| 2019 |
Cuscó R, Edgar JH, Liu S, Cassabois G, Gil B, Artús L. Influence of isotopic substitution on the anharmonicity of the interlayer shear mode of h -BN Physical Review B. 99: 85428. DOI: 10.1103/Physrevb.99.085428 |
0.322 |
|
| 2019 |
Cuscó R, Edgar JH, Liu S, Cassabois G, Gil B, Artús L. Effects of isotopic substitution on the phonons of van der Waals crystals: the case of hexagonal boron nitride Journal of Physics D. 52: 303001. DOI: 10.1088/1361-6463/Ab1Cab |
0.421 |
|
| 2019 |
Yuan C, Li J, Lindsay L, Cherns D, Pomeroy JW, Liu S, Edgar JH, Kuball M. Modulating the thermal conductivity in hexagonal boron nitride via controlled boron isotope concentration Communications Physics. 2. DOI: 10.1038/S42005-019-0145-5 |
0.325 |
|
| 2019 |
Caldwell JD, Aharonovich I, Cassabois G, Edgar JH, Gil B, Basov DN. Photonics with hexagonal boron nitride Nature Reviews Materials. 4: 552-567. DOI: 10.1038/S41578-019-0124-1 |
0.352 |
|
| 2019 |
Chatzakis I, Davidson RB, Dunkelberger AD, Liu S, Freitas J, Culbertson J, Edgar JH, Ratchford DC, Ellis CT, Grafton AB, Giles AJ, Tischler JG, Caldwell JD, Owrutsky JC. Rapid Bimolecular and Defect-Assisted Carrier Recombination in Hexagonal Boron Nitride The Journal of Physical Chemistry C. 123: 14689-14695. DOI: 10.1021/Acs.Jpcc.9B04118 |
0.326 |
|
| 2019 |
Al-Atabi HA, Cheikh MI, Hosni MH, Edgar JH. A cooling fin to enhance the efficiency of crystal growth by physical vapor transport Materials Science and Engineering B-Advanced Functional Solid-State Materials. 251: 114443. DOI: 10.1016/J.Mseb.2019.114443 |
0.442 |
|
| 2018 |
Folland TG, Fali A, White ST, Matson JR, Liu S, Aghamiri NA, Edgar JH, Haglund RF, Abate Y, Caldwell JD. Reconfigurable infrared hyperbolic metasurfaces using phase change materials. Nature Communications. 9: 4371. PMID 30349033 DOI: 10.1038/S41467-018-06858-Y |
0.306 |
|
| 2018 |
Ngoc My Duong H, Nguyen MAP, Kianinia M, Ohshima T, Abe H, Watanabe K, Taniguchi T, Edgar JH, Aharonovich I, Toth M. Effects of high energy electron irradiation on quantum emitters in hexagonal boron nitride. Acs Applied Materials & Interfaces. PMID 29882642 DOI: 10.1021/Acsami.8B07506 |
0.333 |
|
| 2018 |
Xu ZQ, Elbadawi C, Tran TT, Kianinia M, Li X, Liu D, Hoffman TB, Nguyen M, Kim S, Edgar JH, Wu X, Song L, Ali S, Ford M, Toth M, et al. Single photon emission from plasma treated 2D hexagonal boron nitride. Nanoscale. PMID 29682653 DOI: 10.1039/C7Nr08222C |
0.321 |
|
| 2018 |
Cuscó R, Artús L, Edgar JH, Liu S, Cassabois G, Gil B. Isotopic effects on phonon anharmonicity in layered van der Waals crystals: Isotopically pure hexagonal boron nitride Physical Review B. 97: 155435. DOI: 10.1103/Physrevb.97.155435 |
0.465 |
|
| 2018 |
Al-Atabi HA, Khan N, Nour E, Mondoux J, Zhang Y, Edgar JH. Bulk (100) scandium nitride crystal growth by sublimation on tungsten single crystal seeds Applied Physics Letters. 113: 122106. DOI: 10.1063/1.5051457 |
0.461 |
|
| 2018 |
Liu S, He R, Xue L, Li J, Liu B, Edgar JH. Single Crystal Growth of Millimeter-Sized Monoisotopic Hexagonal Boron Nitride Chemistry of Materials. 30: 6222-6225. DOI: 10.1021/Acs.Chemmater.8B02589 |
0.507 |
|
| 2018 |
Al Atabi HA, Al Auda ZF, Padavala B, Craig M, Hohn K, Edgar JH. Sublimation Growth and Characterization of Erbium Nitride Crystals Crystal Growth & Design. 18: 3762-3766. DOI: 10.1021/Acs.Cgd.7B01543 |
0.518 |
|
| 2018 |
Padavala B, Atabi HA, Tengdelius L, Lu J, Högberg H, Edgar JH. Cubic boron phosphide epitaxy on zirconium diboride Journal of Crystal Growth. 483: 115-120. DOI: 10.1016/J.Jcrysgro.2017.11.014 |
0.401 |
|
| 2017 |
Vuong TQP, Liu S, Van der Lee A, Cuscó R, Artús L, Michel T, Valvin P, Edgar JH, Cassabois G, Gil B. Isotope engineering of van der Waals interactions in hexagonal boron nitride. Nature Materials. PMID 29251722 DOI: 10.1038/Nmat5048 |
0.366 |
|
| 2017 |
Liu S, van Duin AC, van Duin DM, Liu B, Edgar JH. Atomistic Insights into Nucleation and Formation of Hexagonal Boron Nitride on Ni from First-Principles-Based Reactive Molecular Dynamics Simulations. Acs Nano. PMID 28319661 DOI: 10.1021/Acsnano.6B06736 |
0.367 |
|
| 2017 |
Huber SP, Medvedev VV, Gullikson E, Padavala B, Edgar JH, van de Kruijs RW, Bijkerk F, Prendergast D. Determining crystal phase purity in c-BP through X-ray absorption spectroscopy. Physical Chemistry Chemical Physics : Pccp. PMID 28149999 DOI: 10.1039/C6Cp06967C |
0.4 |
|
| 2017 |
Vuong TQP, Cassabois G, Valvin P, Liu S, Edgar JH, Gil B. Exciton-phonon interaction in the strong-coupling regime in hexagonal boron nitride Physical Review B. 95: 201202. DOI: 10.1103/Physrevb.95.201202 |
0.32 |
|
| 2017 |
Edgar JH, Liu S, Hoffman T, Zhang Y, Twigg ME, Bassim ND, Liang S, Khan N. Defect sensitive etching of hexagonal boron nitride single crystals Journal of Applied Physics. 122: 225110. DOI: 10.1063/1.4997864 |
0.473 |
|
| 2017 |
Huber SP, Gullikson E, Meyer-Ilse J, Frye CD, Edgar JH, Kruijs RWEvd, Bijkerk F, Prendergast D. Detection of defect populations in superhard semiconductor boron subphosphide B12P2 through X-ray absorption spectroscopy Journal of Materials Chemistry. 5: 5737-5749. DOI: 10.1039/C6Ta10935G |
0.344 |
|
| 2017 |
Liu S, He R, Ye Z, Du X, Lin J, Jiang H, Liu B, Edgar JH. Large-Scale Growth of High-Quality Hexagonal Boron Nitride Crystals at Atmospheric Pressure from an Fe–Cr Flux Crystal Growth & Design. 17: 4932-4935. DOI: 10.1021/Acs.Cgd.7B00871 |
0.455 |
|
| 2017 |
Frye CD, Saw CK, Padavala B, Khan N, Nikolic RJ, Edgar JH. Suppression of Rotational Twins in Epitaxial B12P2 on 4H-SiC Crystal Growth & Design. DOI: 10.1021/Acs.Cgd.7B00867 |
0.395 |
|
| 2017 |
Hoffman T, Zhang Y, Liu S, Khan N, Twigg M, Bassim N, Edgar J. Assessing Hexagonal Boron Nitride Crystal Quality by Defect Sensitive Etching Microscopy and Microanalysis. 23: 1518-1519. DOI: 10.1017/S143192761700825X |
0.406 |
|
| 2017 |
Reshetniak VV, Mavrin BN, Edgar JH, Whiteley CE, Medvedev VV. Phonon states of B12P2 crystals: Ab initio calculation and experiment Journal of Physics and Chemistry of Solids. 110: 248-253. DOI: 10.1016/J.Jpcs.2017.06.003 |
0.78 |
|
| 2017 |
Gao Y, Zhou M, Wang H, Ji C, Whiteley C, Edgar J, Liu H, Ma Y. The high-pressure compressibility of B12P2 Journal of Physics and Chemistry of Solids. 102: 21-26. DOI: 10.1016/J.Jpcs.2016.11.002 |
0.762 |
|
| 2017 |
Frye CD, Saw CK, Padavala B, Nikolić RJ, Edgar JH. Hydride CVD Hetero-epitaxy of B 12 P 2 on 4H-SiC Journal of Crystal Growth. 459: 112-117. DOI: 10.1016/J.Jcrysgro.2016.11.101 |
0.405 |
|
| 2016 |
Huber SP, Medvedev VV, Meyer-Ilse J, Gullikson E, Padavala B, Edgar JH, Sturm JM, van de Kruijs RWE, Prendergast D, Bijkerk F. Exploiting the P L_2,3 absorption edge for optics: spectroscopic and structural characterization of cubic boron phosphide thin films Optical Materials Express. 6: 3946. DOI: 10.1364/Ome.6.003946 |
0.403 |
|
| 2016 |
Edgar JH, Hoffman T. Synthesis of large single crystals of boron nitride for electronic and photonic applications Spie Newsroom. DOI: 10.1117/2.1201602.006302 |
0.398 |
|
| 2016 |
Li J, Cao XK, Hoffman TB, Edgar JH, Lin JY, Jiang HX. Nature of exciton transitions in hexagonal boron nitride Applied Physics Letters. 108. DOI: 10.1063/1.4944696 |
0.332 |
|
| 2016 |
Gul R, Cui Y, Bolotnikov AE, Camarda GS, Egarievwe SU, Hossain A, Roy UN, Yang G, Edgar JH, Nwagwu U, James RB. Photocurrent response of B12As2 crystals to blue light, and its temperature- dependent electrical characterizations Aip Advances. 6. DOI: 10.1063/1.4941937 |
0.373 |
|
| 2016 |
Huber SP, Gullikson E, Frye CD, Edgar JH, Kruijs RWEvd, Bijkerk F, Prendergast D. Self-healing in B12P2 through Mediated Defect Recombination Chemistry of Materials. 28: 8415-8428. DOI: 10.1021/Acs.Chemmater.6B04075 |
0.313 |
|
| 2016 |
Padavala B, Frye CD, Wang X, Ding Z, Chen R, Dudley M, Raghothamachar B, Lu P, Flanders BN, Edgar JH. Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate Crystal Growth and Design. 16: 981-987. DOI: 10.1021/Acs.Cgd.5B01525 |
0.413 |
|
| 2016 |
Padavala B, Frye C, Ding Z, Chen R, Dudley M, Raghothamachar B, Khan N, Edgar J. Corrigendum to “Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide” [Solid State Sci. 47 (2015) 55–60] Solid State Sciences. 53: 83. DOI: 10.1016/J.Solidstatesciences.2016.02.007 |
0.314 |
|
| 2016 |
Padavala B, Frye CD, Wang X, Raghothamachar B, Edgar JH. CVD growth and properties of boron phosphide on 3C-SiC Journal of Crystal Growth. 449: 15-21. DOI: 10.1016/J.Jcrysgro.2016.05.031 |
0.437 |
|
| 2015 |
Hossain T, Wei D, Edgar JH, Garces NY, Nepal N, Hite JK, Mastro MA, Eddy CR, Meyer HM. Effect of GaN surface treatment on Al2O3/ n -GaN MOS capacitors Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4931793 |
0.338 |
|
| 2015 |
Frye CD, Kucheyev SO, Edgar JH, Voss LF, Conway AM, Shao Q, Nikoli? RJ. Sintered Cr/Pt and Ni/Au ohmic contacts to B12P2 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4917010 |
0.312 |
|
| 2015 |
Baranov DG, Edgar JH, Hoffman T, Bassim N, Caldwell JD. Perfect interferenceless absorption at infrared frequencies by a van der Waals crystal Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.201405 |
0.387 |
|
| 2015 |
Padavala B, Frye CD, Ding Z, Chen R, Dudley M, Raghothamachar B, Khan N, Edgar JH. Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide Solid State Sciences. 47: 55-60. DOI: 10.1016/J.Solidstatesciences.2015.03.002 |
0.4 |
|
| 2014 |
Le Godec Y, Mezouar M, Kurakevych OO, Munsch P, Nwagwu U, Edgar JH, Solozhenko VL. Equation of state of single-crystal cubic boron phosphide Journal of Superhard Materials. 36: 61-64. DOI: 10.3103/S1063457614010092 |
0.378 |
|
| 2014 |
Hoffman TB, Zhang Y, Edgar JH, Gaskill DK. Growth of hBN using metallic boron: Isotopically Enriched h10BN and h11BN Prehospital and Disaster Medicine. 1635. DOI: 10.1557/Opl.2014.48 |
0.413 |
|
| 2014 |
Wei D, Hossain T, Briggs DP, Edgar JH. A comparison of N-polar (0001) GaN surface preparations for the atomic layer deposition of Al2O3 Ecs Journal of Solid State Science and Technology. 3: N127-N131. DOI: 10.1149/2.0201410Jss |
0.336 |
|
| 2014 |
Wei D, Edgar JH, Briggs DP, Retterer ST, Srijanto B, Hensley DK, Meyer HM. Atomic layer deposition TiO2-Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4897919 |
0.372 |
|
| 2014 |
Du XZ, Fyre CD, Edgar JH, Lin JY, Jiang HX. Temperature dependence of the energy bandgap of two-dimensional hexagonal boron nitride probed by excitonic photoluminescence Journal of Applied Physics. 115. DOI: 10.1063/1.4863823 |
0.373 |
|
| 2014 |
Edgar JH, Hoffman TB, Clubine B, Currie M, Du XZ, Lin JY, Jiang HX. Characterization of bulk hexagonal boron nitride single crystals grown by the metal flux technique Journal of Crystal Growth. 403: 110-113. DOI: 10.1016/J.Jcrysgro.2014.06.006 |
0.51 |
|
| 2014 |
Hoffman TB, Clubine B, Zhang Y, Snow K, Edgar JH. Optimization of Ni-Cr flux growth for hexagonal boron nitride single crystals Journal of Crystal Growth. 393: 114-118. DOI: 10.1016/J.Jcrysgro.2013.09.030 |
0.505 |
|
| 2014 |
Hossain T, Wei D, Nepal N, Garces NY, Hite JK, Meyer HM, Eddy CR, Baker T, Mayo A, Schmitt J, Edgar JH. Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 565-568. DOI: 10.1002/Pssc.201300659 |
0.315 |
|
| 2014 |
Padavala B, Frye C, Edgar JH, Ding Z, Chen R, Dudley M, Raghothamachar B. Crystal growth and characterization of cubic boron phosphide on silicon carbide Materials Science and Technology Conference and Exhibition 2014, Ms and T 2014. 3: 1575-1581. |
0.366 |
|
| 2014 |
Padavala B, Frye C, Edgar JH, Ding Z, Chen R, Dudley M, Raghothamachar B, Schmitt J. Heteroepitaxial growth of boron phosphide on 3C-SiC/Si(100) and AlN/sapphire(0001) substrates Materials Science and Technology Conference and Exhibition 2014, Ms and T 2014. 3: 1583-1590. |
0.327 |
|
| 2013 |
Frye CD, Edgar JH, Ohkubo I, Mori T. Seebeck coefficient and electrical resistivity of single crystal B 12As2 at high temperatures Journal of the Physical Society of Japan. 82. DOI: 10.7566/Jpsj.82.095001 |
0.468 |
|
| 2013 |
Wei D, Hossain T, Garces NY, Nepal N, Meyer HM, Kirkham MJ, Eddy CR, Edgar JH. Influence of atomic layer deposition temperatures on TiO2/n-Si MOS capacitor Ecs Journal of Solid State Science and Technology. 2: N110-N114. DOI: 10.1149/2.010305Jss |
0.341 |
|
| 2013 |
Whiteley CE, Kirkham MJ, Edgar JH. The coefficients of thermal expansion of boron arsenide (B 12As2) between 25 °c and 850 °c Journal of Physics and Chemistry of Solids. 74: 673-676. DOI: 10.1016/J.Jpcs.2012.12.026 |
0.784 |
|
| 2012 |
Klein PB, Nwagwu U, Edgar JH, Freitas JA. Photoluminescence investigation of the indirect band gap and shallow impurities in icosahedral B 12As 2 Journal of Applied Physics. 112. DOI: 10.1063/1.4729920 |
0.308 |
|
| 2012 |
Zhang Y, Chen H, Dudley M, Edgar JH, Gong Y, Bakalova S, Kuball M, Zhang L, Su D, Zhu Y. Growth mechanisms and defect structures of B 12As 2 epilayers grown on 4 H-SiC substrates Journal of Crystal Growth. 352: 3-8. DOI: 10.1016/J.Jcrysgro.2011.12.065 |
0.438 |
|
| 2012 |
Nyakiti LO, Lee RG, Gu Z, Edgar JH, Chaudhuri J. Polarity determination of rough and smooth surface grains in AlN crystals Crystal Research and Technology. 47: 1134-1139. DOI: 10.1002/Crat.201200005 |
0.358 |
|
| 2011 |
Whiteley CE, Mayo A, Edgar JH, Dudley M, Zhang Y. Defect-selective etching of icosahedral boron arsenide (B 12As 2) crystals in molten potassium hydroxide Materials Research Society Symposium Proceedings. 1307: 79-85. DOI: 10.1557/Opl.2011.504 |
0.811 |
|
| 2011 |
Whiteley CE, Zhang Y, Mayo A, Edgar JH, Gong Y, Kuball M, Dudley M. Solution growth and characterization of icosahedral boron arsenide (B 12As 2) Materials Research Society Symposium Proceedings. 1307: 66-72. DOI: 10.1557/Opl.2011.502 |
0.812 |
|
| 2011 |
Zhang Y, Chen H, Dudley M, Edgar JH, Gong Y, Bakalova S, Kuball M, Zhang L, Su D, Zhu Y. Elimination of degenerate epitaxy in the growth of high quality B 12As 2 single crystalline epitaxial films Materials Research Society Symposium Proceedings. 1307: 15-20. DOI: 10.1557/Opl.2011.316 |
0.438 |
|
| 2011 |
Wu J, Zhu H, Hou D, Ji C, Whiteley CE, Edgar JH, Ma Y. High pressure X-ray diffraction study on icosahedral boron arsenide (B 12As2) Journal of Physics and Chemistry of Solids. 72: 144-146. DOI: 10.1016/J.Jpcs.2010.12.005 |
0.771 |
|
| 2011 |
Whiteley CE, Zhang Y, Gong Y, Bakalova S, Mayo A, Edgar JH, Kuball M. Semiconducting icosahedral boron arsenide crystal growth for neutron detection Journal of Crystal Growth. 318: 553-557. DOI: 10.1016/J.Jcrysgro.2010.10.057 |
0.819 |
|
| 2011 |
Bohnen T, Van Dreumel GWG, Hageman PR, Yazdi GR, Yakimova R, Vlieg E, Algra RE, Verheijen MA, Edgar JH. Scandium aluminum nitride nanowires Scandium: Compounds, Productions and Applications. 135-152. |
0.305 |
|
| 2010 |
Bakalova S, Gong Y, Cobet C, Esser N, Zhang Y, Edgar JH, Zhang Y, Dudley M, Kuball M. Electronic excitations in B12As2 and their temperature dependence by vacuum ultraviolet ellipsometry. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 22: 395801. PMID 21403232 DOI: 10.1088/0953-8984/22/39/395801 |
0.35 |
|
| 2010 |
Zhang Y, Chen H, Dudley M, Zhang Y, Edgar J, Gong Y, Bakalova S, Kuball M, Zhang L, Su D, Kisslinger K, Zhu Y. Mechanism for Improved Quality B12As2 Epitaxial Films on (0001) 4H-SiC Substrates by Tilting toward [1-100] Direction Mrs Proceedings. 1246. DOI: 10.1557/Proc-1246-B04-02 |
0.415 |
|
| 2010 |
Du L, Edgar JH. Thermodynamic analysis and purification for source materials in sublimation crystal growth of aluminum nitride Materials Research Society Symposium Proceedings. 1202: 221-227. DOI: 10.1557/Proc-1202-I05-08 |
0.497 |
|
| 2010 |
Zhang Y, Chen H, Zhang N, Dudley M, Gong Y, Kuball M, Xu Z, Edgar JH, Zhang L, Zhu Y. Origins of twinned microstructures in B12As2 epilayers grown on (0001) 6H-SiC and their influence on physical properties Materials Research Society Symposium Proceedings. 1164: 121-127. DOI: 10.1557/Proc-1164-L09-10 |
0.43 |
|
| 2010 |
Gao W, Whiteley C, Zhang Y, Plummer J, Edgar JH, Gong YY, Kuball M. Attempt to grow α-rhombohedral boron crystals in copper solvent Materials Research Society Symposium Proceedings. 1164: 73-78. DOI: 10.1557/Proc-1164-L06-03 |
0.792 |
|
| 2010 |
Zhang Y, Edgar JH, Plummer J, Whiteley C, Chen H, Dudley M, Gong Y, Gray J, Kuball M. Growth of boron carbide crystals from a copper flux Materials Research Society Symposium Proceedings. 1164: 67-72. DOI: 10.1557/Proc-1164-L06-02 |
0.827 |
|
| 2010 |
Gong Y, Zhang Y, Dudley M, Edgar JH, Heard PJ, Kuball M. Thermal conductivity and Seebeck coefficients of icosahedral boron arsenide films on silicon carbide Journal of Applied Physics. 108. DOI: 10.1063/1.3486518 |
0.403 |
|
| 2010 |
Gong Y, Tapajna M, Bakalova S, Zhang Y, Edgar JH, Dudley M, Hopkins M, Kuball M. Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device Applied Physics Letters. 96. DOI: 10.1063/1.3443712 |
0.345 |
|
| 2010 |
Nyakiti LO, Chaudhuri J, Gu Z, Edgar JH. Transmission electron microscopy study of defects in AlN crystals with rough and smooth surface grains Journal of Crystal Growth. 312: 3479-3484. DOI: 10.1016/J.Jcrysgro.2010.09.014 |
0.336 |
|
| 2010 |
Du L, Edgar JH, Peascoe-Meisner RA, Gong Y, Bakalova S, Kuball M. Sublimation crystal growth of yttrium nitride Journal of Crystal Growth. 312: 2896-2903. DOI: 10.1016/J.Jcrysgro.2010.06.011 |
0.634 |
|
| 2010 |
Zhang Y, Chen H, Choi G, Raghothamachar B, Dudley M, Edgar JH, Grasza K, Tymicki E, Zhang L, Su D, Zhu Y. Nucleation mechanism of 6H-SiC polytype inclusions inside 15R-SiC crystals Journal of Electronic Materials. 39: 799-804. DOI: 10.1007/S11664-010-1105-8 |
0.386 |
|
| 2010 |
Du L, Edgar JH, Kenik EA, Meyer H. Sublimation growth of titanium nitride crystals Journal of Materials Science: Materials in Electronics. 21: 78-87. DOI: 10.1007/S10854-009-9873-8 |
0.604 |
|
| 2010 |
Yu Z, Hui C, Dudley M, Yi Z, Edgar JH, Gong Y, Bakalova S, Kuball M, Zhang L, Su D, Kisslinger K, Zhu Y. Mechanism for improved quality B12As2 epitaxial films on (0001) 4H-SiC substrates offcut towards [1-100] Materials Research Society Symposium Proceedings. 1246: 71-76. |
0.312 |
|
| 2009 |
Sedhain A, Du L, Edgar JH, Lin JY, Jiang HX. The origin of 2.78 eV emission and yellow coloration in bulk AlN substrates Applied Physics Letters. 95. DOI: 10.1063/1.3276567 |
0.525 |
|
| 2009 |
Bohnen T, Yazdi GR, Yakimova R, van Dreumel GWG, Hageman PR, Vlieg E, Algra RE, Verheijen MA, Edgar JH. ScAlN nanowires: A cathodoluminescence study Journal of Crystal Growth. 311: 3147-3151. DOI: 10.1016/J.Jcrysgro.2009.03.023 |
0.387 |
|
| 2009 |
Bohnen T, Van Dreumel GWG, Hageman PR, Algra RE, Van Enckevort WJP, Vlieg E, Verheijen MA, Edgar JH. Growth of scandium aluminum nitride nanowires on ScN(111) films on 6H-SiC substrates by HVPE Physica Status Solidi (a) Applications and Materials Science. 206: 2809-2815. DOI: 10.1002/Pssa.200925060 |
0.404 |
|
| 2008 |
Ito T, Forman SM, Cao C, Li F, Eddy CR, Mastro MA, Holm RT, Henry RL, Hohn KL, Edgar JH. Self-assembled monolayers of alkylphosphonic acid on GaN substrates. Langmuir : the Acs Journal of Surfaces and Colloids. 24: 6630-5. PMID 18522438 DOI: 10.1021/La800716R |
0.325 |
|
| 2008 |
Chen H, Wang G, Dudley M, Xu Z, Edgar JH, Batten T, Kuball M, Zhang L, Zhu Y. Characterization and Growth Mechanism of B 12 As 2 Epitaxial Layers Grown on (1-100) 15R-SiC Mrs Proceedings. 1069. DOI: 10.1557/Proc-1069-D08-03 |
0.36 |
|
| 2008 |
Nyakiti LO, Chaudhuri J, Kenik EA, Lu P, Edgar JH. Defect selective etching of thick ALN layers grown on 6H-SiC seeds - A transmission electron microscopy study Materials Research Society Symposium Proceedings. 1040: 7-12. DOI: 10.1557/Proc-1040-Q11-03 |
0.406 |
|
| 2008 |
Chaudhuri J, Nyakiti LO, Peng L, Edgar JH. Transmission electron microscopy study of interface region of AlN/6H-SiC Materials Research Society Symposium Proceedings. 1040: 190-195. DOI: 10.1557/Proc-1040-Q10-05 |
0.401 |
|
| 2008 |
Sedhain A, Nepal N, Nakarmi ML, Al Tahtamouni TM, Lin JY, Jiang HX, Gu Z, Edgar JH. Photoluminescence properties of AlN homoepilayers with different orientations Applied Physics Letters. 93. DOI: 10.1063/1.2965613 |
0.35 |
|
| 2008 |
Chaudhuri J, Lee RG, Nyakiti LO, Gu Z, Edgar JH, Li P. Thermal oxidation of single crystal aluminum nitride - A high resolution transmission electron microscopy study Materials Letters. 62: 2465-2468. DOI: 10.1016/J.Matlet.2007.12.023 |
0.351 |
|
| 2008 |
Chaudhuri J, Lee RG, Nyakiti L, Armstrong J, Gu Z, Edgar JH, Wen JG. Transmission electron microscopy study of defect-selective etched (010) ScN crystals Materials Letters. 62: 27-29. DOI: 10.1016/J.Matlet.2007.04.104 |
0.404 |
|
| 2008 |
Edgar JH, Du L, Nyakiti L, Chaudhuri J. Native oxide and hydroxides and their implications for bulk AlN crystal growth Journal of Crystal Growth. 310: 4002-4006. DOI: 10.1016/J.Jcrysgro.2008.06.014 |
0.525 |
|
| 2008 |
Lu P, Edgar JH, Cao C, Hohn K, Dalmau R, Schlesser R, Sitar Z. Seeded growth of AlN on SiC substrates and defect characterization Journal of Crystal Growth. 310: 2464-2470. DOI: 10.1016/J.Jcrysgro.2008.01.010 |
0.482 |
|
| 2007 |
Chen H, Wang G, Dudley M, Zhang L, Zhu Y, Zhang Y, Edgar JH, Kuball M. Defect structures of B12As2 epilayers grown on c-plane and a-plane 6H-SiC substrates Materials Research Society Symposium Proceedings. 994: 29-34. DOI: 10.1557/Proc-0994-F03-01 |
0.452 |
|
| 2007 |
Gu Z, Edgar JH, Raghothamachar B, Dudley M, Zhuang D, Sitar Z, Coffey DW. Sublimation growth of aluminum nitride on silicon carbide substrate with aluminum nitride-silicon carbide alloy transition layer Journal of Materials Research. 22: 675-680. DOI: 10.1557/Jmr.2007.0077 |
0.481 |
|
| 2007 |
Xu Z, Edgar JH, Look DC, Baumann S, Bleiler RJ, Wang SH, Mohney SE. The effect of Si doping on the electrical properties of B12 As2 thin films on (0001) 6H-SiC substrates Journal of Applied Physics. 101. DOI: 10.1063/1.2437687 |
0.356 |
|
| 2007 |
Chaudhuri J, Nyakiti L, Lee RG, Gu Z, Edgar JH, Wen JG. Thermal oxidation of single crystalline aluminum nitride Materials Characterization. 58: 672-679. DOI: 10.1016/J.Matchar.2006.11.013 |
0.379 |
|
| 2007 |
Lu P, Edgar JH, Lee RG, Chaudhuri J. Nucleation of AlN on SiC substrates by seeded sublimation growth Journal of Crystal Growth. 300: 336-342. DOI: 10.1016/J.Jcrysgro.2006.11.324 |
0.463 |
|
| 2006 |
Gu Z, Edgar JH, Raghothamachar B, Dudley M, Zhuang D, Sitar Z. The effect of aluminum nitride-silicon carbide alloy buffer layers on the sublimation growth of aluminum nitride on SiC (0001) substrates Materials Science Forum. 527: 1497-1500. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1497 |
0.473 |
|
| 2006 |
Li D, Edgar JH. Thermodynamic analysis of impurities in the sublimation growth of AlN single crystals Materials Research Society Symposium Proceedings. 955: 342-347. DOI: 10.1557/Proc-0955-I11-05 |
0.391 |
|
| 2006 |
Chaudhuri J, Lee RG, Nyakiti LO, Gu Z, Edgar JH, Li P. High resolution transmission electron microscopy study of thermal oxidation of single crystalline aluminum nitride Materials Research Society Symposium Proceedings. 955: 300-302. DOI: 10.1557/Proc-0955-I09-01 |
0.351 |
|
| 2006 |
Mercurio L, Edgar JH, Du L, Kenik EA. Titanium nitride epitaxy on tungsten (100) by sublimation crystal growth Materials Research Society Symposium Proceedings. 955: 378-384. DOI: 10.1557/Proc-0955-I07-11 |
0.63 |
|
| 2006 |
Lu P, Edgar JH, Cao C, Hohn K, Dalmau R, Schlesser R, Sitar Z. Bulk AlN Crystal Growth on SiC Seeds and Defects Study Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I03-07 |
0.453 |
|
| 2006 |
Edgar JH, Gu Z, Taggart K, Chaudhuri J, Nyakiti L, Lee RG, Witt R. Oxidation of aluminum nitride for defect characterization Materials Research Society Symposium Proceedings. 892: 505-510. DOI: 10.1557/Proc-0892-Ff21-02 |
0.377 |
|
| 2006 |
Gu Z, Edgar JH, Wang C, Coffey DW. Thermal oxidation of aluminum nitride powder Journal of the American Ceramic Society. 89: 2167-2171. DOI: 10.1111/J.1551-2916.2006.01065.X |
0.328 |
|
| 2006 |
Xu Z, Edgar JH, Speakman S. Heteroepitaxial B12As2 on silicon substrates Journal of Crystal Growth. 293: 162-168. DOI: 10.1016/J.Jcrysgro.2006.04.092 |
0.351 |
|
| 2006 |
Gu Z, Edgar JH, Coffey DW, Chaudhuri J, Nyakiti L, Lee RG, Wen JG. Defect-selective etching of scandium nitride crystals Journal of Crystal Growth. 293: 242-246. DOI: 10.1016/J.Jcrysgro.2006.03.065 |
0.489 |
|
| 2006 |
Edgar JH, Gu Z, Gu L, Smith DJ. Interface properties of an AIN/(AIN) x(SiC) 1-x/4H-SiC heterostructure Physica Status Solidi (a) Applications and Materials Science. 203: 3720-3725. DOI: 10.1002/Pssa.200622279 |
0.412 |
|
| 2006 |
Lu P, Edgar JH, Cao C, Hohn K, Dalmau R, Schlesser R, Sitar Z. Bulk AlN crystal growth on SiC seeds and defects study Materials Research Society Symposium Proceedings. 955: 411-416. |
0.346 |
|
| 2005 |
Gu Z, Du L, Edgar JH, Payzant EA, Walker L, Liu R, Engelhard MH. Aluminum nitride-silicon carbide alloy crystals grown on SiC substrates by sublimation Mrs Internet Journal of Nitride Semiconductor Research. 10: 1-8. DOI: 10.1557/S1092578300000569 |
0.61 |
|
| 2005 |
Gu Z, Edgar JH, Payzant EA, Meyer HM, Walker LR, Sarua A, Kuball M. Sublimation growth of aluminum nitride-silicon carbide alloy crystals on SiC (0001) substrates Materials Research Society Symposium Proceedings. 831: 95-100. DOI: 10.1557/Proc-831-E3.1 |
0.501 |
|
| 2005 |
Wang SH, Lysczek EM, Liu B, Mohney SE, Xu Z, Nagarajan R, Edgar JH. CrPt Ohmic contacts to B 12 As 2 Applied Physics Letters. 87. DOI: 10.1063/1.2001760 |
0.317 |
|
| 2005 |
Zhuang D, Edgar JH. Wet etching of GaN, AlN, and SiC: A review Materials Science and Engineering R: Reports. 48: 1-46. DOI: 10.1016/J.Mser.2004.11.002 |
0.572 |
|
| 2005 |
Liu B, Edgar JH, Raghothamachar B, Dudley M, Lin JY, Jiang HX, Sarua A, Kuball M. Free nucleation of aluminum nitride single crystals in HPBN crucible by sublimation Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 117: 99-104. DOI: 10.1016/J.Mseb.2004.10.009 |
0.516 |
|
| 2005 |
Lu P, Edgar JH, Glembocki OJ, Klein PB, Glaser ER, Perrin J, Chaudhuri J. High-speed homoepitaxy of SiC from methyltrichlorosilane by chemical vapor deposition Journal of Crystal Growth. 285: 506-513. DOI: 10.1016/J.Jcrysgro.2005.08.053 |
0.439 |
|
| 2005 |
Nagarajan R, Xu Z, Edgar JH, Baig F, Chaudhuri J, Rek Z, Payzant EA, Meyer HM, Pomeroy J, Kuball M. Crystal growth of B12As2 on SiC substrate by CVD method Journal of Crystal Growth. 273: 431-438. DOI: 10.1016/J.Jcrysgro.2004.07.068 |
0.459 |
|
| 2005 |
Gu Z, Edgar JH, Speakman SA, Blom D, Perrin J, Chaudhuri J. Thermal oxidation of polycrystalline and single crystalline aluminum nitride wafers Journal of Electronic Materials. 34: 1271-1279. DOI: 10.1007/S11664-005-0250-Y |
0.349 |
|
| 2005 |
Edgar JH, Gu Z, Lu P, Du L. Impurity incoporation during the sublimation growth of aluminum nitride crystals Aiche Annual Meeting, Conference Proceedings. 5387. |
0.364 |
|
| 2004 |
Liu B, Edgar JH, Gu Z, Zhuang D, Raghothamachar B, Dudley M, Sarua A, Kuball M, Meyer HM. The durability of various crucible materials for aluminum nitride crystal growth by sublimation Mrs Internet Journal of Nitride Semiconductor Research. 9. DOI: 10.1557/S1092578300000417 |
0.482 |
|
| 2004 |
Gu Z, Edgar JH, Pomeroy J, Kuball M, Coffey DW. Crystal growth and properties of scandium nitride Journal of Materials Science: Materials in Electronics. 15: 555-559. DOI: 10.1023/B:Jmse.0000032591.54107.2C |
0.488 |
|
| 2004 |
Vetter WM, Nagarajan R, Edgar JH, Dudley M. Double-positioning twinning in icosahedral B12As2 thin films grown by chemical vapor deposition Materials Letters. 58: 1331-1335. DOI: 10.1016/J.Matlet.2003.09.042 |
0.41 |
|
| 2004 |
Zhuang D, Edgar JH, Liu B, Huey HE, Jiang HX, Lin JY, Kuball M, Mogal F, Chaudhuri J, Rek Z. Bulk AlN crystal growth by direct heating of the source using microwaves Journal of Crystal Growth. 262: 168-174. DOI: 10.1016/J.Jcrysgro.2003.10.080 |
0.503 |
|
| 2004 |
Zhuang D, Edgar JH, Strojek B, Chaudhuri J, Rek Z. Defect-selective etching of bulk AlN single crystals in molten KOH/NaOH eutectic alloy Journal of Crystal Growth. 262: 89-94. DOI: 10.1016/J.Jcrysgro.2003.10.051 |
0.465 |
|
| 2003 |
Lu P, Edgar JH, Pomeroy J, Kuball M, Meyer HM, Aselage T. Growth of rhombohedral B12P2 thin films on 6H-SiC (0001) by chemical vapor deposition Materials Research Society Symposium - Proceedings. 799: 121-125. DOI: 10.1557/Proc-799-Z2.10 |
0.397 |
|
| 2003 |
Sarua A, Rajasingam S, Kuball M, Garro N, Sancho O, Cros A, Cantarero A, Olguin D, Liu B, Zhuang D, Edgar JH. Effect of impurities on Raman and photoluminescence spectra of AlN bulk crystals Materials Research Society Symposium - Proceedings. 798: 297-302. DOI: 10.1557/Proc-798-Y5.17 |
0.362 |
|
| 2003 |
Nagarajan R, Edgar JH, Pomeroy J, Kuball M, Aselage T. Investigation of Thin Film Growth of B12As2 by Chemical Vapor Deposition Materials Research Society Symposium - Proceedings. 764: 283-287. |
0.338 |
|
| 2002 |
Zhuang D, Edgar JH, Liu L, Liu B, Walker L. Wet chemical etching of AlN single crystals Mrs Internet Journal of Nitride Semiconductor Research. 7. DOI: 10.1557/S1092578300000302 |
0.618 |
|
| 2002 |
Burkland B, Xie ZY, Edgar JH, Ervin M, Chaudhuri J, Farsinivas S. Effects of the addition of silane during carbonization on the epitaxy of 3C-SiC on Si Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1500349 |
0.329 |
|
| 2002 |
Liu L, Edgar JH. A global growth rate model for aluminum nitride sublimation Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1421349 |
0.526 |
|
| 2002 |
Van Uden NWA, Hubel H, Hayes JM, Prins AD, Kuball M, Dunstan DJ, Downes JR, Shi Y, Edgar JH. Determination of the mode grüneisen parameter of A1N using different fits on experimental high pressure data High Pressure Research. 22: 37-41. DOI: 10.1080/08957950211363 |
0.301 |
|
| 2002 |
Liu L, Liu B, Edgar JH, Rajasingam S, Kuball M. Raman characterization and stress analysis of AlN grown on SiC by sublimation Journal of Applied Physics. 92: 5183-5188. DOI: 10.1063/1.1506195 |
0.593 |
|
| 2002 |
Liu L, Edgar JH. Substrates for gallium nitride epitaxy Materials Science and Engineering: R: Reports. 37: 61-128. DOI: 10.1016/S0927-796X(02)00008-6 |
0.43 |
|
| 2002 |
Edgar JH, Liu L, Liu B, Zhuang D, Chaudhuri J, Kuball M, Rajasingam S. Bulk AlN crystal growth: Self-seeding and seeding on 6H-SiC substrates Journal of Crystal Growth. 246: 187-193. DOI: 10.1016/S0022-0248(02)01741-4 |
0.657 |
|
| 2002 |
Hageman W, Rys A, Schmitt J, Edgar JH, Liu B, Koleske DD. Capacitance-voltage characterization of AlN MIS structures grown on 6H-SiC(0001) substrates by MOCVD Physica Status Solidi C: Conferences. 129-132. DOI: 10.1002/Pssc.200390006 |
0.381 |
|
| 2001 |
Liu L, Liu B, Shi Y, Edgar JH. Growth mode and defects in aluminum nitride sublimated on (0001) 6H-SiC substrates Materials Research Society Symposium - Proceedings. 639. DOI: 10.1557/S1092578300000193 |
0.6 |
|
| 2001 |
Shi Y, Liu B, Liu L, Edgar JH, Payzant EA, Hayes JM, Kuball M. New technique for sublimation growth of AlN single crystals Mrs Internet Journal of Nitride Semiconductor Research. 6. DOI: 10.1557/S109257830000017X |
0.635 |
|
| 2001 |
Kuball M, Hayes JM, Shi Y, Edgar JH. Phonon lifetimes and phonon decay channels in single crystalline bulk aluminum nitride Materials Research Society Symposium - Proceedings. 639. DOI: 10.1557/Proc-639-G7.7 |
0.316 |
|
| 2001 |
Hayes JM, Kuball M, Shi Y, Edgar JH. Raman analysis of single crystalline bulk aluminum nitride: Temperature dependence of the phonon frequencies Materials Research Society Symposium - Proceedings. 639. DOI: 10.1557/Proc-639-G6.38 |
0.347 |
|
| 2001 |
Liu B, Shi Y, Liu L, Edgar JH, Braski DN. Surface morphology and composition characterization at the initial stages of AlN crystal growth Materials Research Society Symposium - Proceedings. 639. DOI: 10.1557/Proc-639-G3.13 |
0.647 |
|
| 2001 |
Kuball M, Hayes JM, Prins AD, Van Uden NWA, Dunstan DJ, Shi Y, Edgar JH. Raman scattering studies on single-crystalline bulk AIN under high pressures Applied Physics Letters. 78: 724-726. DOI: 10.1063/1.1344567 |
0.332 |
|
| 2001 |
Shi Y, Xie ZY, Liu LH, Liu B, Edgar JH, Kuball M. Influence of buffer layer and 6H-SiC substrate polarity on the nucleation of AlN grown by the sublimation sandwich technique Journal of Crystal Growth. 233: 177-186. DOI: 10.1016/S0022-0248(01)01560-3 |
0.623 |
|
| 2001 |
Kuball M, Hayes JM, Shi Y, Edgar JH, Prins AD, Van Uden NWA, Dunstan DJ. Raman scattering studies on single-crystalline bulk AlN: Temperature and pressure dependence of the AlN phonon modes Journal of Crystal Growth. 231: 391-396. DOI: 10.1016/S0022-0248(01)01469-5 |
0.337 |
|
| 2001 |
Xie ZY, Edgar JH, Burkland BK, George JT, Chaudhuri J. DPBs-free and polytype controlled growth of SiC via surface etching on on-axis 6H-SiC(0 0 0 1) Journal of Crystal Growth. 224: 235-243. DOI: 10.1016/S0022-0248(01)01024-7 |
0.435 |
|
| 2001 |
Hageman W, Xie Z, Edgar J, Zhuang D, Jagganathan S, Barghout K, Chaudhuri J, Rys A, Schmitt J. Growth of AlN on Etched 6H-SiC(0001) Substrates via MOCVD Physica Status Solidi (a) Applied Research. 188: 783-787. DOI: 10.1002/1521-396X(200112)188:2<783::Aid-Pssa783>3.0.Co;2-W |
0.43 |
|
| 2001 |
Liu L, Zhuang D, Liu B, Shi Y, Edgar J, Rajasingam S, Kuball M. Characterization of Aluminum Nitride Crystals Grown by Sublimation Physica Status Solidi (a). 188: 769-774. DOI: 10.1002/1521-396X(200112)188:2<769::Aid-Pssa769>3.0.Co;2-G |
0.621 |
|
| 2001 |
Shi Y, Liu B, Liu L, Edgar JH, Meyer HM, Payzant EA, Walker LR, Evans ND, Swadener JG, Chaudhuri J. Initial Nucleation Study and New Technique for Sublimation Growth of AlN on SiC Substrate Physica Status Solidi (a) Applied Research. 188: 757-762. DOI: 10.1002/1521-396X(200112)188:2<757::Aid-Pssa757>3.0.Co;2-S |
0.618 |
|
| 2001 |
Liu L, Liu B, Shi Y, Edgar JH. Growth mode and defects in aluminum nitride sublimed on (0001) 6H-SiC substrates Mrs Internet Journal of Nitride Semiconductor Research. 6. |
0.311 |
|
| 2000 |
Edgar JH, Robins LH, Coatney SE, Liu L, Chaudhuri J, Ignatiev K, Rek Z. Comparison of aluminum nitride freely nucleated and seeded on 6H-silicon carbide Materials Science Forum. 338: II/-. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1599 |
0.652 |
|
| 2000 |
Edgar JH, Robins LH, Coatney SE, Liu L, Chaudhuri J, Ignatiev K, Rek Z. A comparison of aluminum nitride freely nucleated and seeded on 6H-Silicon carbide Materials Science Forum. 338: 1599-1602. DOI: 10.4028/www.scientific.net/MSF.338-342.1599 |
0.407 |
|
| 2000 |
Chaudhuri J, George JT, Edgar JH, Xie ZY, Rek Z. Effect of in situ surface treatment on the growth of 3C-SiC thin films on 6H-SiC substrate - an X-ray triple crystal diffractometry and synchrotron X-ray topography study Materials Science Forum. 338. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1045 |
0.429 |
|
| 2000 |
Hayes JM, Kuball M, Shi Y, Edgar JH. Temperature Dependence of the Phonons of Bulk AlN Japanese Journal of Applied Physics. 39: 710-712. DOI: 10.1143/Jjap.39.L710 |
0.355 |
|
| 2000 |
Kuball M, Hayes JM, Shi Y, Edgar JH. Phonon lifetimes in bulk AlN and their temperature dependence Applied Physics Letters. 77: 1958-1960. DOI: 10.1063/1.1311948 |
0.338 |
|
| 2000 |
Chaudhuri J, Ignatiev K, Edgar JH, Xie ZY, Gao Y, Rek Z. Low temperature chemical vapor deposition of 3C-SiC on 6H-SiC - high resolution X-ray diffractometry and synchrotron X-ray topography study Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 76: 217-224. DOI: 10.1016/S0921-5107(00)00451-7 |
0.429 |
|
| 2000 |
Wei CH, Edgar JH, Ignatiev C, Chaudhuri J. Role of trimethylgallium flow during nucleation layer deposition in the optimization of epitaxial GaN films Thin Solid Films. 360: 34-38. DOI: 10.1016/S0040-6090(99)00875-5 |
0.341 |
|
| 2000 |
Wei CH, Edgar JH. Unstable composition region in the wurtzite B1-x-yGaxAlyN system Journal of Crystal Growth. 208: 179-182. DOI: 10.1016/S0022-0248(99)00397-8 |
0.354 |
|
| 2000 |
Liu L, Edgar JH. Transport effects in the sublimation growth of aluminum nitride Journal of Crystal Growth. 220: 243-253. DOI: 10.1016/S0022-0248(00)00841-1 |
0.561 |
|
| 2000 |
Wei CH, Edgar JH. Thermodynamic analysis of GaxB1-xN grown by MOVPE Journal of Crystal Growth. 217: 109-114. DOI: 10.1016/S0022-0248(00)00498-X |
0.366 |
|
| 2000 |
Xie ZY, Wei CH, Li LY, Yu QM, Edgar JH. Gaseous etching of 6H-SiC at relatively low temperatures Journal of Crystal Growth. 217: 115-124. DOI: 10.1016/S0022-0248(00)00480-2 |
0.363 |
|
| 2000 |
Wei CH, Xie ZY, Edgar JH, Zeng KC, Lin JY, Jiang HX, Chaudhuri J, Ignatiev C, Braski DN. MOCVD growth of GaBN on 6H-SiC (0001) substrates Journal of Electronic Materials. 29: 452-456. DOI: 10.1007/S11664-000-0160-Y |
0.402 |
|
| 2000 |
Xie ZY, Wei CH, Chen SF, Jiang SY, Edgar JH. Surface etching of 6H-SiC (0001) and surface morphology of the subsequently grown GaN via MOCVD Journal of Electronic Materials. 29: 411-417. DOI: 10.1007/S11664-000-0153-X |
0.376 |
|
| 2000 |
Wei CH, Xie ZY, Li LY, Yu QM, Edgar JH. MOCVD growth of cubic GaN on 3C-SiC deposited on Si(100) substrates Journal of Electronic Materials. 29: 317-321. DOI: 10.1007/S11664-000-0070-Z |
0.425 |
|
| 1999 |
Wei CH, Xie ZY, Edgar JH, Zeng KC, Lin JY, Jiang HX, Ignatiev C, Chaudhuri J, Braski DN. Growth and characterization of BxGa1-xN on 6H-SiC (0001) by MOVPE Materials Research Society Symposium - Proceedings. 537. DOI: 10.1557/S1092578300002842 |
0.411 |
|
| 1999 |
Xie ZY, Wei CH, Li LY, Edgar JH, Chaudhuri J, Ignatiev C. Effects of surface preparation on epitaxial GaN on 6H-SiC deposited via MOCVD Mrs Internet Journal of Nitride Semiconductor Research. 4. DOI: 10.1557/S1092578300002593 |
0.43 |
|
| 1998 |
Wei CH, Xie ZY, Edgar JH, Zeng KC, Lin JY, Jiang HX, Ignatiev C, Chaudhuri J, Braski DN. Growth and Characterization of B x Ga l-x N on 6H-SiC (0001) by MOVPE Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G3.79 |
0.345 |
|
| 1998 |
Chaudhur J, Ignatiev K, Edgar JH, Xie ZY, Gao Y. Low Temperature Chemical Vapor Deposition Of 3C-SiC On 6H-SiC – An X-Ray Triple Crystal Diffractometry And X-Ray Topography Study Mrs Proceedings. 512. DOI: 10.1557/Proc-512-169 |
0.469 |
|
| 1998 |
Edgar JH, Gao Y, Chaudhuri J, Cheema S, Casalnuovo SA, Yip PW, Sidorov MV. Selective epitaxial growth of silicon carbide on SiO2 masked Si(100): The effects of temperature Journal of Applied Physics. 84: 201-204. DOI: 10.1063/1.368017 |
0.447 |
|
| 1998 |
Xie ZY, Edgar JH, McCormick TL, Sidorov MV. The effects of the simultaneous addition of diborane and ammonia on the hot-filament-assisted chemical vapor deposition of diamond II. Characterization of diamond and BCN film Diamond and Related Materials. 7: 1357-1363. DOI: 10.1016/S0925-9635(98)00207-6 |
0.447 |
|
| 1998 |
Edgar JH, Xie ZY, Braski DN. The effects of the simultaneous addition of diborane and ammonia on the hot-filament assisted chemical vapor deposition of diamond Diamond and Related Materials. 7: 35-42. DOI: 10.1016/S0925-9635(97)00159-3 |
0.371 |
|
| 1998 |
Gao Y, Edgar JH, Chaudhuri J, Cheema SN, Sidorov MV, Braski DN. Low-temperature chemical-vapor deposition of 3C-SiC films on Si(100) using SiH4-C2H4-HCl-H2 Journal of Crystal Growth. 191: 439-445. DOI: 10.1016/S0022-0248(98)00212-7 |
0.377 |
|
| 1998 |
Edgar JH, Gao Y, Chaudhuri J, Cheema S, Casalnuovo SA, Yip PW, Sidorov MV. Selective epitaxial growth of silicon carbide on SiO2 masked Si(100): The effects of temperature Journal of Applied Physics. 84: 201-204. |
0.343 |
|
| 1997 |
Gao Y, Edgar JH. Thermodynamic analysis of blanket and selective epitaxy of SiC on Si and SiO2 masked Si Materials Research Society Symposium - Proceedings. 441: 735-740. DOI: 10.1557/Proc-441-735 |
0.355 |
|
| 1997 |
Edgar JH, Gao Y. Influence of HCl and H2 on the heteroepitaxial growth of 3C-SiC films on Si(100) via low-temperature chemical vapor deposition Materials Research Society Symposium - Proceedings. 441: 699-704. DOI: 10.1557/Proc-441-699 |
0.422 |
|
| 1997 |
Gao Y, Edgar JH. Selective epitaxial growth of SiC: Thermodynamic analysis of the Si-C-Cl-H and Si-C-Cl-H-O systems Journal of the Electrochemical Society. 144: 1875-1880. DOI: 10.1149/1.1837694 |
0.352 |
|
| 1997 |
Edgar JH, Wei CH, Smith DT, Kistenmacher TJ, Bryden WA. Hardness, elastic modulus and structure of indium nitride thin films on AIN-nucleated sapphire substrates Journal of Materials Science: Materials in Electronics. 8: 307-312. DOI: 10.1023/A:1018587306451 |
0.429 |
|
| 1997 |
Edgar JH, Smith DT, Eddy CR, Carosella CA, Sartwell BD. c-Boron-aluminum nitride alloys prepared by ion-beam assisted deposition Thin Solid Films. 298: 33-38. DOI: 10.1016/S0040-6090(96)08884-0 |
0.34 |
|
| 1997 |
Edgar JH, Yu ZJ, Smith DJ, Chaudhuri J, Cheng X. X-ray diffraction and high resolution transmission electron microscopy of 3C-SiC/AlN/6H-SiC(0001) Journal of Electronic Materials. 26: 1389-1393. DOI: 10.1007/S11664-997-0056-1 |
0.438 |
|
| 1996 |
Chaudhuri J, Thokala R, Edgar JH, Sywe BS. X-ray double crystal and X-ray topographic characterization of silicon carbide thin films on silicon, titanium carbide, 6H-silicon carbide, and aluminum nitride/sapphire substrates Thin Solid Films. 274: 23-30. DOI: 10.1016/0040-6090(95)07087-7 |
0.438 |
|
| 1996 |
Edgar JH, Carosella CA, Eddy CR, Smith DT. Effect of beam voltage on the properties of aluminium nitride prepared by ion beam assisted deposition Journal of Materials Science: Materials in Electronics. 7: 247-253. DOI: 10.1007/Bf00188950 |
0.315 |
|
| 1995 |
Edgar JH, Eddy CR, Sprague JA, Sartwell BD. Ion beam deposition of boron-aluminum nitride thin films Materials Research Society Symposium - Proceedings. 388: 183-188. DOI: 10.1557/Proc-388-183 |
0.339 |
|
| 1995 |
Chaudhuri J, Thokala R, Edgar JH, Sywe BS. Characterization Of Single Crystal Epitaxial Aluminum Nitride Thin Films On Sapphire, Silicon Carbide And Silicon Substrates By X-Ray Double Crystal Diffractometry And Transmission Electron Microscopy Advances in X-Ray Analysis. 39: 645-651. DOI: 10.1154/S0376030800023077 |
0.435 |
|
| 1995 |
Chaudhuri J, Thokala R, Edgar JH, Sywe BS. X-ray double crystal characterization of single crystal epitaxial aluminum nitride thin films on sapphire, silicon carbide and silicon substrates Journal of Applied Physics. 77: 6263-6266. DOI: 10.1063/1.359158 |
0.456 |
|
| 1994 |
Sywe BS, Yu ZJ, Burckhard S, Edgar JH. Epitaxial growth of SiC on sapphire substrates with an AIN buffer layer Journal of the Electrochemical Society. 141: 510-513. DOI: 10.1149/1.2054756 |
0.447 |
|
| 1994 |
Dissanayake A, Lin JY, Jiang HX, Yu ZJ, Edgar JH. Low-temperature epitaxial growth and photoluminescence characterization of GaN Applied Physics Letters. 65: 2317-2319. DOI: 10.1063/1.112729 |
0.391 |
|
| 1992 |
Sywe BS, Yu ZJ, Edgar JH, Chaudhuri J. Growth and Characterization of Layered Structures of Silicon Carbide and Aluminum Nitride Mrs Proceedings. 281. DOI: 10.1557/Proc-281-787 |
0.397 |
|
| 1992 |
Sywe BS, Yu ZJ, Edgar JH. Epitaxial Growth of AlN on 3C-SiC and Al 2 O 3 Substrates Mrs Proceedings. 242. DOI: 10.1557/Proc-242-463 |
0.315 |
|
| 1992 |
Yu ZJ, Sywe BS, Edgar JH. Characterization of Al X Ga 1-x N Grown by MOCVD at Low Temperatures Mrs Proceedings. 242: 421. DOI: 10.1557/Proc-242-421 |
0.303 |
|
| 1992 |
Ahmed AU, Rys A, Singh N, Edgar JH, Yu ZJ. Electrical and compositional properties of AlN-Si interfaces Journal of the Electrochemical Society. 139: 1146-1151. DOI: 10.1149/1.2069355 |
0.334 |
|
| 1992 |
Yu ZJ, Sywe BS, Ahmed AU, Edgar JH. The growth and characterization of GaN on sapphire and silicon Journal of Electronic Materials. 21: 383-387. DOI: 10.1007/Bf02660470 |
0.404 |
|
| 1991 |
Yu ZJ, Edgar JH, Ahmed AU, Rys A. Metalorganic surface chemical adsorption deposition of AlN films by ammonia and trimethylaluminum Journal of the Electrochemical Society. 138: 196-199. DOI: 10.1149/1.2085536 |
0.397 |
|
| 1991 |
Powell JA, Petit JB, Edgar JH, Jenkins IG, Matus LG, Choyke WJ, Clemen L, Yoganathan M, Yang JW, Pirouz P. Application of oxidation to the structural characterization of SiC epitaxial films Applied Physics Letters. 59: 183-185. DOI: 10.1063/1.105960 |
0.304 |
|
| 1991 |
Powell JA, Petit JB, Edgar JH, Jenkins IG, Matus LG, Yang JW, Pirouz P, Choyke WJ, Clemen L, Yoganathan M. Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers Applied Physics Letters. 59: 333-335. DOI: 10.1063/1.105587 |
0.414 |
|
| 1991 |
Edgar JH, Yu ZJ, Sywe BS. A comparison of NF3 and NH3 as the nitrogen sources for AIN crystal growth by metalorganic chemical vapor deposition Thin Solid Films. 204: 115-121. DOI: 10.1016/0040-6090(91)90497-L |
0.373 |
|
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