Year |
Citation |
Score |
2020 |
Hernandez K, Overzet LJ, Goeckner MJ. Electron dynamics during the reignition of pulsed capacitively-coupled radio-frequency discharges Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 38: 34005. DOI: 10.1116/1.5133790 |
0.322 |
|
2019 |
Press AF, Goeckner MJ, Overzet LJ. Sub-rf period electrical characterization of a pulsed capacitively coupled argon plasma Journal of Vacuum Science & Technology B. 37: 062926. DOI: 10.1116/1.5132753 |
0.401 |
|
2017 |
Poulose J, Goeckner M, Shannon S, Coumou D, Overzet L. Driving frequency fluctuations in pulsed capacitively coupled plasmas The European Physical Journal D. 71. DOI: 10.1140/Epjd/E2017-80096-7 |
0.39 |
|
2017 |
Fagioli CJF, Urrabazo D, Goeckner MJ. Fourier transform infrared spectroscopy of trifluoroiodomethane plasma Journal of Vacuum Science and Technology. 35: 61305. DOI: 10.1116/1.4986503 |
0.414 |
|
2017 |
Liu C, Goeckner MJ, Walker AV. Plasma polymerization of poly(3,4-ethylenedioxyethene) films: The influence of plasma gas phase chemistry Journal of Vacuum Science and Technology. 35: 21302. DOI: 10.1116/1.4968017 |
0.417 |
|
2017 |
Tennyson J, Rahimi S, Hill C, Tse L, Vibhakar A, Akello-Egwel D, Brown DB, Dzarasova A, Hamilton JR, Jaksch D, Mohr S, Wren-Little K, Bruckmeier J, Agarwal A, Bartschat K, ... ... Goeckner MJ, et al. QDB: a new database of plasma chemistries and reactions Plasma Sources Science and Technology. 26: 055014. DOI: 10.1088/1361-6595/Aa6669 |
0.34 |
|
2016 |
Sundaram NG, Ramachandran S, Overzet L, Goeckner M, Lee GS. Study of layered diamond like carbon and PECVD fluorocarbon films for ultra low dielectric constant interlayer dielectric applications Journal of Materials Research. 1-11. DOI: 10.1557/Jmr.2016.97 |
0.326 |
|
2015 |
Urrabazo D, Veyan JF, Goeckner MJ, Overzet LJ. Ion induced electron emission from chemically cleaned Si and Ge Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/40/405201 |
0.406 |
|
2014 |
Bates RL, Goeckner MJ, Overzet LJ. Correction of aspect ratio dependent etch disparities Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4890004 |
0.351 |
|
2014 |
Bates RL, Stephan Thamban PL, Goeckner MJ, Overzet LJ. Silicon etch using SF6/C4F8/Ar gas mixtures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4880800 |
0.472 |
|
2013 |
Saraf IR, Goeckner MJ, Goodlin BE, Kirmse KHR, Nelson CT, Overzet LJ. Kinetics of the deposition step in time multiplexed deep silicon etches Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4769873 |
0.611 |
|
2013 |
Wells GP, Estrada-Raygoza IC, Thamban PLS, Nelson CT, Chung CW, Overzet LJ, Goeckner MJ. Understanding the synthesis of ethylene glycol pulsed plasma discharges Plasma Processes and Polymers. 10: 119-135. DOI: 10.1002/Ppap.201200066 |
0.595 |
|
2012 |
Stephan Thamban PL, Yun S, Padron-Wells G, Hosch JW, Goeckner MJ. Comparison endpoint study of process plasma and secondary electron beam exciter optical emission spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.4756694 |
0.435 |
|
2012 |
Nelson CT, Overzet LJ, Goeckner MJ. Gain and loss mechanisms for neutral species in low pressure fluorocarbon plasmas by infrared spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.4746411 |
0.563 |
|
2012 |
Nelson CT, Overzet LJ, Goeckner MJ. Role of surface temperature in fluorocarbon plasma-surface interactions Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.4729445 |
0.586 |
|
2012 |
Stephan Thamban PL, Padron-Wells G, Yun S, Hosch JW, Goeckner MJ. Electron beam excitation method to study gas phase during etch processes Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4718724 |
0.411 |
|
2012 |
Nelson CT, Overzet LJ, Goeckner MJ. Temperature dependence of the infrared absorption cross-sections of neutral species commonly found in fluorocarbon plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3679408 |
0.579 |
|
2011 |
Ogawa D, Goeckner MJ, Overzet LJ. Optical observation of nitrogen propagation in argon plasma Ieee Transactions On Plasma Science. 39: 2544-2545. DOI: 10.1109/Tps.2011.2159625 |
0.381 |
|
2011 |
Saraf I, Goeckner M, Goodlin B, Kirmse K, Overzet L. Mask undercut in deep silicon etch Applied Physics Letters. 98: 161502. DOI: 10.1063/1.3579542 |
0.429 |
|
2010 |
Thamban PL, Hosch J, Goeckner MJ. Controllable optical emission spectroscopy diagnostic system for analysis of process chemistries. The Review of Scientific Instruments. 81: 013502. PMID 20113095 DOI: 10.1063/1.3276706 |
0.343 |
|
2010 |
Overzet LJ, Jung D, Mandra MA, Goeckner M, Dufour T, Dussart R, Lefaucheux P. RF impedance measurements of DC atmospheric micro-discharges European Physical Journal D. 60: 449-454. DOI: 10.1140/Epjd/E2010-00274-5 |
0.413 |
|
2010 |
Dussart R, Overzet LJ, Lefaucheux P, Dufour T, Kulsreshath M, Mandra MA, Tillocher T, Aubry O, Dozias S, Ranson P, Lee JB, Goeckner M. Integrated micro-plasmas in silicon operating in helium European Physical Journal D. 60: 601-608. DOI: 10.1140/Epjd/E2010-00272-7 |
0.317 |
|
2010 |
Ogawa D, Chung CW, Goeckner M, Overzet L. Transient effects caused by pulsed gas and liquid injections into low pressure plasmas Plasma Sources Science and Technology. 19. DOI: 10.1088/0963-0252/19/3/034013 |
0.412 |
|
2010 |
Jindal AK, Overzet L, Goeckner M. Time Resolved Microwave Interferometry Measurement of the Electron Density in a Pulsed 1,3-Butadiene Discharge Plasma Chemistry and Plasma Processing. 30: 287-297. DOI: 10.1007/S11090-010-9213-Z |
0.431 |
|
2009 |
Padron-Wells G, Jarvis BC, Jindal AK, Goeckner MJ. Understanding the synthesis of DEGVE pulsed plasmas for application to ultra thin biocompatible interfaces. Colloids and Surfaces. B, Biointerfaces. 68: 163-70. PMID 19041228 DOI: 10.1016/J.Colsurfb.2008.09.028 |
0.42 |
|
2009 |
Sant SP, Nelson CT, Overzet LJ, Goeckner MJ. Relationship between gas-phase chemistries and surface processes in fluorocarbon etch plasmas: A process rate model Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 631-642. DOI: 10.1116/1.3136850 |
0.634 |
|
2009 |
Ogawa D, Saraf I, Sra A, Timmons R, Goeckner M, Overzet L. The direct injection of liquid droplets into low pressure plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 342-351. DOI: 10.1116/1.3081965 |
0.414 |
|
2009 |
Sant SP, Nelson CT, Overzet LJ, Goeckner MJ. Chemistry in long residence time fluorocarbon plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 193-208. DOI: 10.1116/1.3065678 |
0.557 |
|
2009 |
Pierce RG, Padron-Wells G, Goeckner MJ. Gas-phase chemistry of pulsed n-hexane discharge Plasma Chemistry and Plasma Processing. 29: 1-11. DOI: 10.1007/S11090-008-9157-8 |
0.405 |
|
2008 |
Tao L, Ramachandran S, Nelson CT, Lin M, Overzet LJ, Goeckner M, Lee G, Willson CG, Wu W, Hu W. Durable diamond-like carbon templates for UV nanoimprint lithography. Nanotechnology. 19: 105302. PMID 21817695 DOI: 10.1088/0957-4484/19/10/105302 |
0.575 |
|
2008 |
Joseph EA, Zhou BS, Sant SP, Overzet LJ, Goeckner MJ. Role of chamber dimension in fluorocarbon based deposition and etching of Si O2 and its effects on gas and surface-phase chemistry Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 545-554. DOI: 10.1116/1.2909963 |
0.513 |
|
2008 |
Goeckner MJ, Nelson CT, Overzet LJ. Electronegative plasma structure Ieee Transactions On Plasma Science. 36: 996-997. DOI: 10.1109/Tps.2008.922486 |
0.603 |
|
2008 |
Goeckner MJ, Nelson CT, Sant SP, Jindal AK, Joseph EA, Zhou BS, Padron-Wells G, Jarvis B, Pierce R, Overzet LJ. Plasma-surface interactions Journal of Physics: Conference Series. 133. DOI: 10.1088/1742-6596/133/1/012010 |
0.567 |
|
2008 |
Dufour T, Dussart R, Lefaucheux P, Ranson P, Overzet LJ, Mandra M, Lee JB, Goeckner M. Effect of limiting the cathode surface on direct current microhollow cathode discharge in helium Applied Physics Letters. 93. DOI: 10.1063/1.2966144 |
0.354 |
|
2007 |
Tao L, Ramachandran S, Nelson CT, Overzet LJ, Goeckner MJ, Lee GS, Hu W. Nanofabrication of diamond-like carbon templates for nanoimprint lithography Materials Research Society Symposium Proceedings. 956: 243-248. DOI: 10.1557/Proc-0956-J13-04 |
0.585 |
|
2007 |
Joseph EA, Sant SP, Goeckner MJ, Overzet LJ, Peng HG, Gidley DW, Kastenmeier BEE. Effects of pore morphology on the diffusive properties of a porous low- κ dielectric Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1684-1693. DOI: 10.1116/1.2778694 |
0.304 |
|
2007 |
Nelson CT, Sant SP, Overzet LJ, Goeckner MJ. Surface kinetics with low ion energy bombardment in fluorocarbon plasmas Plasma Sources Science and Technology. 16: 813-821. DOI: 10.1088/0963-0252/16/4/017 |
0.623 |
|
2006 |
Ramachandran S, Tao L, Lee TH, Sant S, Overzet LJ, Goeckner MJ, Kim MJ, Lee GS, Hu W. Deposition and patterning of diamondlike carbon as antiwear nanoimprint templates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2993-2997. DOI: 10.1116/1.2363409 |
0.386 |
|
2006 |
Chandrashekar A, Lee JS, Lee GS, Goeckner MJ, Overzet LJ. Gas-phase and sample characterizations of multiwall carbon nanotube growth using an atmospheric pressure plasma Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 1812-1817. DOI: 10.1116/1.2232493 |
0.41 |
|
2006 |
Jindal AK, Prengler AJ, Overzet LJ, Goeckner MJ. In situ Fourier transform infrared characterization of the plasma chemistry in varying pulsed cycles of a 1,3-butadiene discharge in an inductively coupled gaseous electronics conference cell Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 126-132. DOI: 10.1116/1.2141618 |
0.336 |
|
2006 |
Zhou B, Joseph EA, Overzet LJ, Goeckner MJ. Spectroscopic study of gas and surface phase chemistries of CF 4 plasmas in an inductively coupled modified gaseous electronics conference reactor Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 114-125. DOI: 10.1116/1.2138718 |
0.367 |
|
2006 |
Liu Y, Overzet LJ, Goeckner MJ. Chemical vapor deposition of aluminum from methylpyrrolidine alane complex Thin Solid Films. 510: 48-54. DOI: 10.1016/J.Tsf.2005.12.156 |
0.308 |
|
2005 |
Zhou B, Joseph EA, Sant SP, Liu Y, Radhakrishnan A, Overzet LJ, Goeckner MJ. Effect of surface temperature on plasma-surface interactions in an inductively coupled modified gaseous electronics conference reactor Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 1657-1667. DOI: 10.1116/1.2049309 |
0.449 |
|
2005 |
Goeckner MJ, Earle GD, Overzet LJ, Maynard JC. Electron confinement on magnetic field lines Ieee Transactions On Plasma Science. 33: 436-437. DOI: 10.1109/Tps.2005.844960 |
0.33 |
|
2004 |
Joseph EA, Zhou B, Sant SP, Overzet LJ, Goeckner MJ. Investigation and modeling of plasma-wall interactions in inductively coupled fluorocarbon plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 689-697. DOI: 10.1116/1.1722614 |
0.394 |
|
2004 |
Goeckner MJ, Marquis JM, Markham BJ, Jindal AK, Joseph EA, Zhou BS. Modified gaseous electronics conference reference cell for the study of plasma-surface-gas interactions Review of Scientific Instruments. 75: 884-890. DOI: 10.1063/1.1688443 |
0.401 |
|
2003 |
Srinivasan S, Marquis J, Pratti L, Khater MH, Goeckner MJ, Overzet LJ. The effects on plasma properties of a current node on inductively coupled plasma sources Plasma Sources Science and Technology. 12: 432-442. DOI: 10.1088/0963-0252/12/3/319 |
0.397 |
|
2000 |
Wang Z, Cohen SA, Ruzic DN, Goeckner MJ. Nitrogen atom energy distributions in a hollow-cathode planar sputtering magnetron Physical Review. E, Statistical Physics, Plasmas, Fluids, and Related Interdisciplinary Topics. 61: 1904-11. PMID 11046476 DOI: 10.1103/Physreve.61.1904 |
0.335 |
|
2000 |
Goeckner MJ, Felch SB, Fang Z, Oberhofer A, Chia VKF, Mount GR, Poulakos M, Keenan WA. Profiling of ultrashallow junctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 472-476. DOI: 10.1116/1.591214 |
0.319 |
|
1999 |
Goeckner MJ. Plasma doping for shallow junctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 2290-2293. DOI: 10.1116/1.590906 |
0.399 |
|
1999 |
Goeckner MJ, Goeckner NA. Fourier-Transform Infrared Measurements Of Chf3/O2 Discharges In An Electron Cyclotron Resonance Reactor Journal of Vacuum Science and Technology. 17: 2586-2592. DOI: 10.1116/1.582000 |
0.398 |
|
1999 |
Goeckner MJ, Felch SB, Weeman J, Mehta S, Reedholm JS. Evaluation of charging damage test structures for ion implantation processes Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 1501-1509. DOI: 10.1116/1.581843 |
0.341 |
|
1999 |
Goeckner MJ, Goeckner NA. Fourier-transform infrared measurements of CHF3/O2 discharges in an electron cyclotron resonance reactor Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 2586-2592. |
0.321 |
|
1998 |
Sheridan TE, Goeckner MJ, Goree J. Electron velocity distribution functions in a sputtering magnetron discharge for the ExB direction Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 2173-2176. DOI: 10.1116/1.581325 |
0.572 |
|
1997 |
Goeckner MJ, Bennett TK, Cohen SA. A source of hyperthermal neutrals for materials processing Applied Physics Letters. 71: 980-982. DOI: 10.1063/1.119706 |
0.358 |
|
1997 |
Park J, Bennett TK, Goeckner MJ, Cohen SA. Plasma-neutral interaction in thermally collapsed plasma Journal of Nuclear Materials. 241: 489-493. DOI: 10.1016/S0022-3115(97)80086-4 |
0.424 |
|
1995 |
Sheridan TE, Goeckner MJ, Goree J. Electron distribution functions in a sputtering magnetron discharge Japanese Journal of Applied Physics. 34: 4977-4982. DOI: 10.1143/Jjap.34.4977 |
0.569 |
|
1995 |
Sheridan TE, Goeckner MJ. Collisional sheath dynamics Journal of Applied Physics. 77: 4967-4972. DOI: 10.1063/1.359304 |
0.369 |
|
1994 |
Goeckner MJ, Henderson MA, Meyer JA, Breun RA. Fourier‐transform infrared absorption spectrometry measurements of a CF4 discharge in an electron cyclotron resonance reactor Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 12: 3120-3125. DOI: 10.1116/1.578946 |
0.426 |
|
1994 |
Goeckner MJ, Malik SM, Conrad JR, Breun RA. Laser-induced fluorescence measurement of the dynamics of a pulsed planar sheath Physics of Plasmas. 1: 1064-1074. DOI: 10.1063/1.870924 |
0.451 |
|
1994 |
Keiter ER, Hitchon WNG, Goeckner MJ. A kinetic model of pulsed sheaths Physics of Plasmas. 1: 3709-3712. DOI: 10.1063/1.870906 |
0.391 |
|
1994 |
Speth RR, Emmert GA, Goeckner MJ. Influence of the high voltage pulse shape on the plasma source ion implantation process Applied Physics Letters. 65: 2272-2274. DOI: 10.1063/1.112715 |
0.36 |
|
1994 |
Zhang L, Shohet JL, Dallmann D, Booske JH, Speth RR, Shenai K, Goeckner MJ, Kruger JB, Rissman P, Turner JE, Perez-Albuerne E, Lee S, Meyyappan N. Low-energy separation by implantation of oxygen structures via plasma source ion implantation Applied Physics Letters. 65: 962-964. DOI: 10.1063/1.112162 |
0.337 |
|
1993 |
Goeckner MJ, Breun RA. Using Fourier transform infrared absorption spectrometry to probe the injected neutral gas in a plasma having a high ionization fraction Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 689-693. DOI: 10.1116/1.578792 |
0.434 |
|
1993 |
Goeckner MJ, Meyer JA, Kim GH, Jenq JS, Matthews A, Taylor JW, Breun RA. Role of Contaminants in Electron Cyclotron Resonance Plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 2543-2552. DOI: 10.1116/1.578605 |
0.435 |
|
1993 |
Goeckner MJ, Goree J, Sheridan TE. Saturation broadening of laser-induced fluorescence from plasma ions Review of Scientific Instruments. 64: 996-1000. DOI: 10.1063/1.1144103 |
0.617 |
|
1992 |
Meyer JA, Kim GH, Goeckner MJ, Hershkowitz N. Measurements of the presheath in an electron cyclotron resonance etching device Plasma Sources Science and Technology. 1: 147-150. DOI: 10.1088/0963-0252/1/3/001 |
0.604 |
|
1992 |
Goeckner MJ, Goree J, Sheridan TE. Measurements of ion velocity and density in the plasma sheath Physics of Fluids B. 4: 1663-1670. DOI: 10.1063/1.860074 |
0.64 |
|
1991 |
Sheridan TE, Goeckner MJ, Goree J. Observation of two-temperature electrons in a sputtering magnetron plasma Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 9: 688-690. DOI: 10.1116/1.577344 |
0.616 |
|
1991 |
Goeckner MJ, Goree J, Sheridan TE. Ion impact etch anisotropy downstream from diffusion plasma sources Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 9: 3178-3180. DOI: 10.1116/1.577142 |
0.641 |
|
1991 |
Goeckner MJ, Gore JA, Sheridan TE. Monte Carlo Simulation of Ions in a Magnetron Plasma Ieee Transactions On Plasma Science. 19: 301-308. DOI: 10.1109/27.106828 |
0.432 |
|
1991 |
Goeckner MJ, Goree J, Sheridan TE. Laser-induced fluorescence characterization of a multidipole filament plasma Physics of Fluids B. 3: 2913-2921. DOI: 10.1063/1.859924 |
0.646 |
|
1990 |
Sheridan TE, Goeckner MJ, Goree J. Model of energetic electron transport in magnetron discharges Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 30-37. DOI: 10.1116/1.577093 |
0.604 |
|
1990 |
Miranda JE, Goeckner MJ, Goree J, Sheridan TE. Monte Carlo simulation of ionization in a magnetron plasma Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 1627-1631. DOI: 10.1116/1.576777 |
0.588 |
|
1990 |
Sheridan TE, Goeckner MJ, Goree J. Electron and ion transport in magnetron plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 1623-1626. DOI: 10.1116/1.576776 |
0.638 |
|
1990 |
Goeckner MJ, Goree J, Sheridan TE. Laser-induced fluorescence characterization of ions in a magnetron plasma Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 3920-3924. DOI: 10.1116/1.576421 |
0.656 |
|
1990 |
Sheridan TE, Goeckner MJ, Goree J. Pressure dependence of ionization efficiency in sputtering magnetrons Applied Physics Letters. 57: 2080-2082. DOI: 10.1063/1.103947 |
0.532 |
|
1990 |
Goree J, Goeckner MJ, Sheridan TE. Sputtering magnetron experiments and modeling Ieee Conference Record - Abstracts. 202. |
0.369 |
|
1989 |
Goeckner MJ, Goree J. Laserinduced fluorescence measurement of plasma ion temperatures: Corrections for power saturation Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 7: 977-981. DOI: 10.1116/1.575831 |
0.595 |
|
1989 |
Goeckner MJ, Goree J. Comment on "Optical carriage for laser-induced fluorescence in a magnetized plasma" [Rev. Sci. Instrum. 59, 2306 (1988)] Review of Scientific Instruments. 60: 3830-3831. DOI: 10.1063/1.1140453 |
0.575 |
|
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