Zai Y. Ren, Ph.D. - Publications
Affiliations: | 2007 | Yale University, New Haven, CT |
Area:
Electronics and Electrical EngineeringYear | Citation | Score | |||
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2008 | Yang AP, Ren ZY, Guo P, Wang GH. Geometries, stabilities, and electronic properties of Y-doped Sin (n = 1-16) clusters: A relativistic density functional investigation Journal of Molecular Structure: Theochem. 856: 88-95. DOI: 10.1016/j.theochem.2008.01.016 | 0.414 | |||
2006 | Guo P, Ren ZY, Yang AP, Han JG, Bian J, Wang GH. Relativistic computational investigation: the geometries and electronic properties of TaSi(n)+ (n = 1-13, 16) clusters. The Journal of Physical Chemistry. A. 110: 7453-60. PMID 16759135 DOI: 10.1021/jp060130f | 0.467 | |||
2006 | Zhao RN, Ren ZY, Guo P, Bai JT, Zhang CH, Han JG. Geometries and electronic properties of the neutral and charged rare earth Yb-doped Si(n) (n = 1-6) clusters: a relativistic density functional investigation. The Journal of Physical Chemistry. A. 110: 4071-9. PMID 16539431 DOI: 10.1021/jp055551w | 0.482 | |||
2005 | Ren ZY, Li F, Guo P, Han JG. A computational investigation of the Ni-doped Sin(n=1-8) clusters by a density functional method Journal of Molecular Structure: Theochem. 718: 165-173. DOI: 10.1016/j.theochem.2005.01.005 | 0.485 | |||
2004 | Guo P, Ren ZY, Wang F, Bian J, Han JG, Wang GH. Structural and electronic properties of TaSi(n) (n=1-13) clusters: a relativistic density functional investigation. The Journal of Chemical Physics. 121: 12265-75. PMID 15606244 DOI: 10.1063/1.1809609 | 0.486 | |||
2004 | Han JG, Ren ZY, Lu BZ. Geometries and stabilities of re-doped Si |
0.479 | |||
2004 | Han JG, Ren ZY, Zhang YW. A computational investigation on Ge nCl - and Ge nCl (n = 1-6) clusters by density functional methods Chemical Physics. 305: 253-258. DOI: 10.1016/j.chemphys.2004.06.057 | 0.468 | |||
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