Year |
Citation |
Score |
2023 |
Calvet L, Guan W, Klemic J, Lee T, Nami M, Sleight J, Stern E, Yosinski S, Zhou C. Editorial for 'focus collection in memory of Prof Mark A Reed'. Nanotechnology. 35. PMID 38149961 DOI: 10.1088/1361-6528/ad1541 |
0.465 |
|
2019 |
Calvet LE, Agnus G, Lecoeur P. Electron-electron interactions in nano-patterned La0.3Sr0.7MnO3 thin films Journal of Vacuum Science & Technology A. 37: 031504. DOI: 10.1116/1.5085669 |
0.351 |
|
2019 |
Herth E, Baranski M, Berlharet D, Edmond S, Bouville D, Calvet LE, Gorecki C. Fast ultra-deep silicon cavities: Toward isotropically etched spherical silicon molds using an ICP-DRIE Journal of Vacuum Science & Technology B. 37: 021206. DOI: 10.1116/1.5081503 |
0.302 |
|
2017 |
Schwarz M, Calvet LE, Snyder JP, Krauss T, Schwalke U, Kloes A. On the Physical Behavior of Cryogenic IV and III–V Schottky Barrier MOSFET Devices Ieee Transactions On Electron Devices. 64: 3808-3815. DOI: 10.1109/Ted.2017.2726899 |
0.364 |
|
2017 |
Kurij G, Solignac A, Maroutian T, Agnus G, Guerrero R, Calvet LE, Pannetier-Lecoeur M, Lecoeur P. Low noise all-oxide magnetic tunnel junctions based on a La0.7Sr0.3MnO3/Nb:SrTiO3interface Applied Physics Letters. 110: 082405. DOI: 10.1063/1.4977173 |
0.374 |
|
2015 |
Kurij G, Calvet LE, Guerrero R, Maroutian T, Agnus G, Solignac A, Lecoeur P. Ultrathin junctions based on the LaSrMnO3/Nb: SrTiO3 functional oxide interface Thin Solid Films. DOI: 10.1016/J.Tsf.2016.03.062 |
0.445 |
|
2012 |
Calvet LE, Agnus G, Vaheb Y, Lau YC, Pillard V, Lecoeur P. Magneto-electrical transport in V-patterned La0.7Sr 0.3MnO3 nanostructures Thin Solid Films. 520: 4600-4603. DOI: 10.1016/J.Tsf.2011.11.071 |
0.359 |
|
2011 |
Calvet LE, Snyder JP, Wernsdorfer W. Fano resonance in electron transport through single dopant atoms Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.205415 |
0.446 |
|
2009 |
Calvet LE, Meshkov GA, Strupiechonski E, Toubestani D, Snyder JP, Fortuna F, Wernsdorfer W. Low temperature transport spectroscopy of defects using Schottky-barrier MOSFETs Physica B: Condensed Matter. 404: 5136-5139. DOI: 10.1016/J.Physb.2009.08.319 |
0.451 |
|
2009 |
Gaucher F, Pautrat A, Autier-Laurent S, David C, Calvet LE, Lecoeur P, Haghiri-Gosnet AM. Fabrication of metallic oxide nanowires Microelectronic Engineering. 86: 820-823. DOI: 10.1016/J.Mee.2008.12.095 |
0.356 |
|
2008 |
Calvet LE, Wernsdorfer W, Snyder JP, Reed MA. Transport spectroscopy of single Pt impurities in silicon using Schottky barrier MOSFETs. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 20: 374125. PMID 21694432 DOI: 10.1088/0953-8984/20/37/374125 |
0.603 |
|
2008 |
Calvet LE, Snyder JP, Wernsdorfer W. Excited-state spectroscopy of single Pt atoms in Si Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.195309 |
0.427 |
|
2008 |
Calvet LE, Snyder JP, Wernsdorfer W. Probing the density of states in a metal-oxide-semiconductor field-effect transistor Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.193309 |
0.414 |
|
2007 |
Calvet LE, Wheeler RG, Reed MA. Observation of the linear stark effect in a single acceptor in Si. Physical Review Letters. 98: 096805. PMID 17359187 DOI: 10.1103/Physrevlett.98.096805 |
0.558 |
|
2007 |
Calvet LE, Wheeler RG, Reed MA. Effect of local strain on single acceptors in Si Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.035319 |
0.554 |
|
2006 |
Weiss DN, Brokmann X, Calvet LE, Kastner MA, Bawendi MG. Multi-island single-electron devices from self-assembled colloidal nanocrystal chains Applied Physics Letters. 88. DOI: 10.1063/1.2189012 |
0.328 |
|
2002 |
Calvet LE, Wheeler RG, Reed MA. Electron transport measurements of Schottky barrier inhomogeneities Applied Physics Letters. 80: 1761-1763. DOI: 10.1063/1.1456257 |
0.606 |
|
2002 |
Calvet LE, Luebben H, Reed MA, Wang C, Snyder JP, Tucker JR. Suppression of leakage current in Schottky barrier metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 91: 757-759. DOI: 10.1063/1.1425074 |
0.589 |
|
2001 |
Wen JG, Huang ZP, Wang DZ, Chen JH, Yang SX, Ren ZF, Wang JH, Calvet LE, Chen J, Klemic JF, Reed MA. Growth and characterization of aligned carbon nanotubes from patterned nickel nanodots and uniform thin films Journal of Materials Research. 16: 3246-3253. DOI: 10.1557/Jmr.2001.0447 |
0.495 |
|
2000 |
Calvet LE, Luebben H, Reed MA, Wang C, Snyder JP, Tucker JR. Subthreshold and scaling of PtSi Schottky barrier MOSFETs Superlattices and Microstructures. 28: 501-506. DOI: 10.1006/Spmi.2000.0954 |
0.576 |
|
1999 |
Ren ZF, Huang ZP, Wang DZ, Wen JG, Xu JW, Wang JH, Calvet LE, Chen J, Klemic JF, Reed MA. Growth of a Single Freestanding Multiwall Carbon Nanotube on each Nanonickel Dot Applied Physics Letters. 75: 1086-1088. DOI: 10.1063/1.124605 |
0.519 |
|
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