Year |
Citation |
Score |
2015 |
Abdallah SA, Herrera DJ, Conlon BP, Rahimi N, Lester LF. Emitter thickness optimization for GaSb thermophotovoltaic cells grown by Molecular Beam Epitaxy Proceedings of Spie - the International Society For Optical Engineering. 9562. DOI: 10.1117/12.2187487 |
0.415 |
|
2015 |
Rahimi N, Herrera DJ, Aragon A, Shima DM, Romero OS, Rotter TJ, Busani T, Lavrova O, Balakrishnan G, Lester LF. GaSb thermophotovoltaics: Current challenges and solutions Proceedings of Spie - the International Society For Optical Engineering. 9358. DOI: 10.1117/12.2079635 |
0.538 |
|
2015 |
Rahimi N, Henera DJ, Abdallah S, Stelmakh V, Chan WR, Celanovic I, Lester LF. Epitaxial and non-epitaxial large area GaSb-based thermophotovoltaic (TPV) cells 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7356082 |
0.51 |
|
2015 |
Vaughan EI, Rahimi N, Balakrishnan G, Hecht AA. Thin-Film Gallium Antimonide for Room-Temperature Radiation Detection Journal of Electronic Materials. 44: 3288-3293. DOI: 10.1007/S11664-015-3869-3 |
0.407 |
|
2014 |
Rahimi N, Behzadirad M, Renteria EJ, Shima DM, Muniz AJ, Busani T, Lavrova O, Balakrishnan G, Lester LF. Beryllium implant activation and damage recovery study in n-type GaSb Proceedings of Spie - the International Society For Optical Engineering. 8981. DOI: 10.1117/12.2040276 |
0.535 |
|
2014 |
Rahimi N, Aragon AA, Shima DM, Hains C, Busani T, Lavrova O, Balakrishnan G, Lester LF. Characterization of surface defects on Be-implanted GaSb Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4886095 |
0.539 |
|
2014 |
Rahimi N, Aragon AA, Romero OS, Shima DM, Rotter TJ, Mukherjee SD, Balakrishnan G, Lester LF. Low resistance palladium/molybdenum based ohmic contacts to n-GaSb grown on GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4884948 |
0.572 |
|
2014 |
Romero OS, Aragon AA, Rahimi N, Shima D, Addamane S, Rotter TJ, Mukherjee SD, Dawson LR, Lester LF, Balakrishnan G. Transmission electron microscopy-based analysis of electrically conductive surface defects in large area GaSb homoepitaxial diodes grown using molecular beam epitaxy Journal of Electronic Materials. 43: 926-930. DOI: 10.1007/S11664-014-3070-0 |
0.53 |
|
2013 |
Rahimi N, Aragon AA, Romero OS, Kim DM, Traynor NBJ, Rotter TJ, Balakrishnan G, Mukherjee SD, Lester LF. Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique Proceedings of Spie - the International Society For Optical Engineering. 8620. DOI: 10.1117/12.2003392 |
0.554 |
|
2013 |
Rahimi N, Aragon AA, Romero OS, Shima DM, Rotter TJ, Balakrishnan G, Mukherjee SD, Lester LF. Ultra-low resistance NiGeAu and PdGeAu ohmic contacts on N-GaSb grown on GaAs Conference Record of the Ieee Photovoltaic Specialists Conference. 2123-2126. DOI: 10.1109/PVSC.2013.6744893 |
0.49 |
|
2013 |
Rahimi N, Aragon AA, Romero OS, Shima DM, Rotter TJ, Mukherjee SD, Balakrishnan G, Lester LF. Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb Apl Materials. 1. DOI: 10.1063/1.4842355 |
0.566 |
|
2011 |
Grillot F, Naderi NA, Wright JB, Rahimi N, Raghunathan R, Crowley MT, Lester LF. Dual-mode quantum dot laser operating in the excited state Ieee Photonic Society 24th Annual Meeting, Pho 2011. 165-166. DOI: 10.1109/PHO.2011.6110477 |
0.53 |
|
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