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Tat Ngai, Ph.D. - Publications

Affiliations: 
2002 University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Electronics and Electrical Engineering
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4 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2004 Chen X, Joshi S, Chen J, Ngai T, Banerjee SK. MOS capacitors on epitaxial Ge-Si1-xGex with high-κ dielectrics using RPCVD Ieee Transactions On Electron Devices. 51: 1532-1534. DOI: 10.1109/Ted.2004.833957  0.353
2002 Ngai T, Chen X, Chen J, Banerjee SK. Improving SiO2/SiGe interface of SiGe p-metal-oxide-silicon field-effect transistors using water vapor annealing Applied Physics Letters. 80: 1773-1775. DOI: 10.1063/1.1445806  0.372
1999 Sharma R, Fretwell JL, Ngai T, Banerjee S. Remote plasma-assisted deposition of gate quality oxides without the use of a preoxidation step Journal of the Electrochemical Society. 146: 2229-2234. DOI: 10.1149/1.1391919  0.342
1999 Sharma R, Fretwell JL, Ngai T, Banerjee S. Properties of gate quality silicon dioxide films deposited on Si-Ge using remote plasma-enhanced chemical vapor deposition with no preoxidation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 460-464.  0.327
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