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Harish Bhaskaran, Ph.D. - Publications

Affiliations: 
2010-2013 University of Exeter, Exeter, England, United Kingdom 
 2013- University of Oxford, Oxford, United Kingdom 
Area:
Mechanical Engineering, Electronics and Electrical Engineering, Materials Science
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72 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2023 Zhou W, Dong B, Farmakidis N, Li X, Youngblood N, Huang K, He Y, David Wright C, Pernice WHP, Bhaskaran H. In-memory photonic dot-product engine with electrically programmable weight banks. Nature Communications. 14: 2887. PMID 37210411 DOI: 10.1038/s41467-023-38473-x  0.744
2023 Wang M, Lee JS, Aggarwal S, Farmakidis N, He Y, Cheng T, Bhaskaran H. Varifocal Metalens Using Tunable and Ultralow-loss Dielectrics. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). e2204899. PMID 36596668 DOI: 10.1002/advs.202204899  0.311
2022 Ali UE, Yang H, Khayrudinov V, Modi G, Cheng Z, Agarwal R, Lipsanen H, Bhaskaran H. A Universal Pick-and-Place Assembly for Nanowires. Small (Weinheim An Der Bergstrasse, Germany). e2201968. PMID 35938750 DOI: 10.1002/smll.202201968  0.754
2022 Sarwat SG, Moraitis T, Wright CD, Bhaskaran H. Chalcogenide optomemristors for multi-factor neuromorphic computation. Nature Communications. 13: 2247. PMID 35474061 DOI: 10.1038/s41467-022-29870-9  0.766
2022 Aggarwal S, Milne T, Farmakidis N, Feldmann J, Li X, Shu Y, Cheng Z, Salinga M, Pernice WH, Bhaskaran H. Antimony as a Programmable Element in Integrated Nanophotonics. Nano Letters. PMID 35451845 DOI: 10.1021/acs.nanolett.1c04286  0.766
2022 Farmakidis N, Youngblood N, Lee JS, Feldmann J, Lodi A, Li X, Aggarwal S, Zhou W, Bogani L, Pernice WH, Wright CD, Bhaskaran H. Electronically Reconfigurable Photonic Switches Incorporating Plasmonic Structures and Phase Change Materials. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). e2200383. PMID 35434939 DOI: 10.1002/advs.202200383  0.765
2021 Lu Y, Chen T, Mkhize N, Chang RJ, Sheng Y, Holdway P, Bhaskaran H, Warner JH. GaS:WS Heterojunctions for Ultrathin Two-Dimensional Photodetectors with Large Linear Dynamic Range across Broad Wavelengths. Acs Nano. PMID 34860494 DOI: 10.1021/acsnano.1c06587  0.774
2021 Farmakidis N, Swett JL, Youngblood N, Li X, Evangeli C, Aggarwal S, Mol JA, Bhaskaran H. Exploiting rotational asymmetry for sub-50 nm mechanical nanocalligraphy. Microsystems & Nanoengineering. 7: 84. PMID 34691759 DOI: 10.1038/s41378-021-00300-y  0.706
2021 Sarwat SG, Bhaskaran H. Memristors get the hues. Nature Nanotechnology. PMID 33888886 DOI: 10.1038/s41565-021-00891-7  0.699
2021 Shu Y, Porter BF, Soh EJH, Farmakidis N, Lim S, Lu Y, Warner JH, Bhaskaran H. Nanoscale Bilayer Mechanical Lithography Using Water as Developer. Nano Letters. PMID 33886314 DOI: 10.1021/acs.nanolett.1c00251  0.623
2021 Cheng Z, Milne T, Salter P, Kim JS, Humphrey S, Booth M, Bhaskaran H. Antimony thin films demonstrate programmable optical nonlinearity. Science Advances. 7. PMID 33523855 DOI: 10.1126/sciadv.abd7097  0.732
2020 He Q, Youngblood N, Cheng Z, Miao X, Bhaskaran H. Dynamically tunable transmissive color filters using ultra-thin phase change materials. Optics Express. 28: 39841-39849. PMID 33379525 DOI: 10.1364/OE.411874  0.771
2020 Xia Q, Berggren KK, Likharev K, Strukov DB, Jiang H, Mikolajick T, Querlioz D, Salinga M, Erickson J, Pi S, Xiong F, Lin P, Li C, Xiong S, Hoskins B, ... ... Bhaskaran H, et al. Roadmap on emerging hardware and technology for machine learning. Nanotechnology. PMID 32679577 DOI: 10.1088/1361-6528/Aba70F  0.741
2020 Soh E, Syed G, Mazzotta G, Porter BF, Riede MK, Nicholas R, Kim JS, Bhaskaran H. Filamentary High-Resolution Electrical Probes for Nanoengineering. Nano Letters. PMID 31904977 DOI: 10.1021/Acs.Nanolett.9B04302  0.647
2020 Lu Y, Chen J, Chen T, Shu Y, Chang RJ, Sheng Y, Shautsova V, Mkhize N, Holdway P, Bhaskaran H, Warner JH. Controlling Defects in Continuous 2D GaS Films for High-Performance Wavelength-Tunable UV-Discriminating Photodetectors. Advanced Materials (Deerfield Beach, Fla.). e1906958. PMID 31894630 DOI: 10.1002/Adma.201906958  0.769
2020 Faneca J, Carrillo SG, Gemo E, Galarreta CRd, Bucio TD, Gardes FY, Bhaskaran H, Pernice WHP, Wright CD, Baldycheva A. Performance characteristics of phase-change integrated silicon nitride photonic devices in the O and C telecommunications bands Optical Materials Express. 10: 1778-1791. DOI: 10.1364/Ome.397833  0.342
2020 Feldmann J, Youngblood N, Li X, Wright CD, Bhaskaran H, Pernice WHP. Integrated 256 Cell Photonic Phase-Change Memory With 512-Bit Capacity Ieee Journal of Selected Topics in Quantum Electronics. 26: 1-7. DOI: 10.1109/Jstqe.2019.2956871  0.772
2019 Shautsova V, Sinha S, Hou L, Zhang Q, Tweedie M, Lu Y, Sheng Y, Porter BF, Bhaskaran H, Warner JH. Direct Laser Patterning and Phase Transformation of 2D PdSe Films for On-Demand Device Fabrication. Acs Nano. PMID 31833365 DOI: 10.1021/Acsnano.9B06892  0.658
2019 Chen T, Lu Y, Sheng Y, Shu Y, Li X, Chang RJ, Bhaskaran H, Warner JH. Ultrathin All-2D Lateral Graphene/GaS/Graphene UV Photodetectors by Direct CVD Growth. Acs Applied Materials & Interfaces. PMID 31833364 DOI: 10.1021/Acsami.9B11984  0.47
2019 Farmakidis N, Youngblood N, Li X, Tan J, Swett JL, Cheng Z, Wright CD, Pernice WHP, Bhaskaran H. Plasmonic nanogap enhanced phase-change devices with dual electrical-optical functionality. Science Advances. 5: eaaw2687. PMID 31819898 DOI: 10.1126/Sciadv.Aaw2687  0.798
2019 Gemo E, Carrillo SG, De Galarreta CR, Baldycheva A, Hayat H, Youngblood N, Bhaskaran H, Pernice WHP, Wright CD. Plasmonically-enhanced all-optical integrated phase-change memory. Optics Express. 27: 24724-24737. PMID 31510357 DOI: 10.1364/Oe.27.024724  0.762
2019 Ghazi Sarwat S, Cheng Z, Youngblood N, Sharizal Alias M, Sinha S, Warner JH, Bhaskaran H. Strong Opto-structural coupling in low dimensional GeSe3 films. Nano Letters. PMID 31442062 DOI: 10.1021/Acs.Nanolett.9B03039  0.797
2019 Chang RJ, Sheng Y, Ryu GH, Mkhize N, Chen T, Lu Y, Chen J, Lee JK, Bhaskaran H, Warner JH. Postgrowth Substitutional Tin Doping of 2D WS Crystals Using Chemical Vapor Deposition. Acs Applied Materials & Interfaces. PMID 31250625 DOI: 10.1021/Acsami.9B06588  0.781
2019 Feldmann J, Youngblood N, Wright CD, Bhaskaran H, Pernice WHP. All-optical spiking neurosynaptic networks with self-learning capabilities. Nature. 569: 208-214. PMID 31068721 DOI: 10.1038/S41586-019-1157-8  0.727
2019 Zhou Y, Sarwat SG, Jung GS, Buehler MJ, Bhaskaran H, Warner JH. Grain Boundaries as Electrical Conduction Channels in Polycrystalline Monolayer WS. Acs Applied Materials & Interfaces. PMID 30817114 DOI: 10.1021/Acsami.8B21391  0.758
2019 Ríos C, Youngblood N, Cheng Z, Le Gallo M, Pernice WHP, Wright CD, Sebastian A, Bhaskaran H. In-memory computing on a photonic platform. Science Advances. 5: eaau5759. PMID 30793028 DOI: 10.1126/Sciadv.Aau5759  0.797
2019 Wright CD, Bhaskaran H, Pernice WHP. Integrated phase-change photonic devices and systems Mrs Bulletin. 44: 721-727. DOI: 10.1557/Mrs.2019.203  0.448
2019 Carrillo SG-, Gemo E, Li X, Youngblood N, Katumba A, Bienstman P, Pernice W, Bhaskaran H, Wright CD. Behavioral modeling of integrated phase-change photonic devices for neuromorphic computing applications Apl Materials. 7: 91113. DOI: 10.1063/1.5111840  0.774
2019 Youngblood N, Ríos C, Gemo E, Feldmann J, Cheng Z, Baldycheva A, Pernice WH, Wright CD, Bhaskaran H. Tunable volatility of Ge2Sb2Te5 in integrated photonics Advanced Functional Materials. 29: 1807571. DOI: 10.1002/Adfm.201807571  0.7
2018 Sarwat SG, Youngblood N, Au YY, Mol JA, Wright CD, Bhaskaran H. Engineering Interface-Dependent Photoconductivity in GeSbTe Nanoscale Devices. Acs Applied Materials & Interfaces. PMID 30501199 DOI: 10.1021/Acsami.8B17602  0.799
2018 Tweedie MEP, Sheng Y, Sarwat SG, Xu W, Bhaskaran H, Warner JH. Inhomogeneous Strain Release during Bending of WS on Flexible Substrates. Acs Applied Materials & Interfaces. PMID 30383356 DOI: 10.1021/Acsami.8B12707  0.765
2018 Wang X, Sheng Y, Chang RJ, Lee JK, Zhou Y, Li S, Chen T, Huang H, Porter BF, Bhaskaran H, Warner JH. Chemical Vapor Deposition Growth of Two-Dimensional Monolayer Gallium Sulfide Crystals Using Hydrogen Reduction of GaS. Acs Omega. 3: 7897-7903. PMID 30087927 DOI: 10.1021/acsomega.8b00749  0.6
2018 Cheng Z, Ríos C, Youngblood N, Wright CD, Pernice WHP, Bhaskaran H. Device-Level Photonic Memories and Logic Applications Using Phase-Change Materials. Advanced Materials (Deerfield Beach, Fla.). e1802435. PMID 29940084 DOI: 10.1002/Adma.201802435  0.814
2018 Chang RJ, Tan H, Wang X, Porter B, Chen T, Sheng Y, Zhou Y, Huang H, Bhaskaran H, Warner JH. High-Performance All 2D-Layered Tin Disulfide: Graphene Photodetecting Transistors with Thickness-Controlled Interface Dynamics. Acs Applied Materials & Interfaces. PMID 29630341 DOI: 10.1021/Acsami.8B01038  0.657
2018 Sarwat SG, Tweedie M, Porter BF, Zhou Y, Sheng Y, Mol JA, Warner JH, Bhaskaran H. Revealing Strain Induced Effects in Ultrathin Heterostructures at the Nanoscale. Nano Letters. PMID 29510053 DOI: 10.1021/Acs.Nanolett.8B00036  0.777
2018 Xu W, Li S, Zhou S, Lee JK, Wang S, Sarwat SG, Wang X, Bhaskaran H, Pasta M, Warner JH. Large Dendritic Monolayer MoS2 Grown by Atmospheric Pressure Chemical Vapor Deposition for Electrocatalysis. Acs Applied Materials & Interfaces. PMID 29360347 DOI: 10.1021/Acsami.7B14861  0.745
2018 Rios C, Stegmaier M, Cheng Z, Youngblood N, Wright CD, Pernice WHP, Bhaskaran H. Controlled switching of phase-change materials by evanescent-field coupling in integrated photonics [Invited] Optical Materials Express. 8: 2455-2470. DOI: 10.1364/Ome.8.002455  0.763
2018 Keitz Jv, Feldmann J, Gruhler N, Ríos C, Wright CD, Bhaskaran H, Pernice WHP. Reconfigurable Nanophotonic Cavities with Nonvolatile Response Acs Photonics. 5: 4644-4649. DOI: 10.1021/Acsphotonics.8B01127  0.455
2018 Cheng Z, Ríos C, Youngblood N, Wright CD, Pernice WHP, Bhaskaran H. Memory Devices: Device‐Level Photonic Memories and Logic Applications Using Phase‐Change Materials (Adv. Mater. 32/2018) Advanced Materials. 30: 1870238. DOI: 10.1002/Adma.201870238  0.72
2017 Porter BF, Mkhize N, Bhaskaran H. Nanoparticle assembly enabled by EHD-printed monolayers. Microsystems & Nanoengineering. 3: 17054. PMID 31057880 DOI: 10.1038/Micronano.2017.54  0.767
2017 Feldmann J, Stegmaier M, Gruhler N, Ríos C, Bhaskaran H, Wright CD, Pernice WHP. Calculating with light using a chip-scale all-optical abacus. Nature Communications. 8: 1256. PMID 29093510 DOI: 10.1038/S41467-017-01506-3  0.42
2017 Cheng Z, Ríos C, Pernice WHP, Wright CD, Bhaskaran H. On-chip photonic synapse. Science Advances. 3: e1700160. PMID 28959725 DOI: 10.1126/Sciadv.1700160  0.755
2017 Au YY, Bhaskaran H, Wright CD. Phase-change devices for simultaneous optical-electrical applications. Scientific Reports. 7: 9688. PMID 28852162 DOI: 10.1038/S41598-017-10425-8  0.448
2017 Sarwat SG, Gehring P, Rodriguez Hernandez G, Warner JH, Briggs GAD, Mol JA, Bhaskaran H. Scaling Limits of Graphene Nanoelectrodes. Nano Letters. PMID 28481105 DOI: 10.1021/Acs.Nanolett.7B00909  0.773
2017 Sheng Y, Wang X, Fujisawa K, Ying S, Elias AL, Lin Z, Xu W, Zhou Y, Korsunsky AM, Bhaskaran H, Terrones M, Warner JH. Photoluminescence Segmentation within Individual Hexagonal Monolayer Tungsten Disulfide Domains Grown by Chemical Vapor Deposition. Acs Applied Materials & Interfaces. PMID 28426197 DOI: 10.1021/Acsami.6B16287  0.312
2017 Wuttig M, Bhaskaran H, Taubner TG. Phase-change materials for non-volatile photonic applications Nature Photonics. 11: 465-476. DOI: 10.1038/Nphoton.2017.126  0.424
2017 Chang R, Wang X, Wang S, Sheng Y, Porter B, Bhaskaran H, Warner JH. Growth of Large Single-Crystalline Monolayer Hexagonal Boron Nitride by Oxide-Assisted Chemical Vapor Deposition Chemistry of Materials. 29: 6252-6260. DOI: 10.1021/Acs.Chemmater.7B01285  0.623
2017 Rodriguez-Hernandez G, Hosseini P, Ríos C, Wright CD, Bhaskaran H. Mixed-Mode Electro-Optical Operation of Ge2Sb2Te5 Nanoscale Crossbar Devices Advanced Electronic Materials. 3: 1700079. DOI: 10.1002/Aelm.201700079  0.438
2017 Stegmaier M, Ríos C, Bhaskaran H, Wright CD, Pernice WHP. Nonvolatile All‐Optical 1 × 2 Switch for Chipscale Photonic Networks Advanced Optical Materials. 5: 1600346. DOI: 10.1002/Adom.201600346  0.423
2016 Carrillo SG, Nash GR, Hayat H, Cryan MJ, Klemm M, Bhaskaran H, Wright CD. Design of practicable phase-change metadevices for near-infrared absorber and modulator applications. Optics Express. 24: 13563-73. PMID 27410372 DOI: 10.1364/Oe.24.013563  0.414
2016 Ríos C, Hosseini P, Taylor RA, Bhaskaran H. Color Depth Modulation and Resolution in Phase-Change Material Nanodisplays. Advanced Materials (Deerfield Beach, Fla.). PMID 27028767 DOI: 10.1002/Adma.201506238  0.681
2016 Pacios M, Hosseini P, Fan Y, He Z, Krause O, Hutchison J, Warner JH, Bhaskaran H. Direct manufacturing of ultrathin graphite on three-dimensional nanoscale features. Scientific Reports. 6: 22700. PMID 26939862 DOI: 10.1038/Srep22700  0.625
2016 Tan H, Fan Y, Rong Y, Porter B, Lau CS, Zhou Y, He Z, Wang S, Bhaskaran H, Warner JH. Doping Graphene Transistors Using Vertical Stacked Monolayer WS2 Heterostructures Grown by Chemical Vapor Deposition. Acs Applied Materials & Interfaces. PMID 26756350 DOI: 10.1021/Acsami.5B08295  0.631
2016 Stegmaier M, Rĺos C, Bhaskaran H, Pernice WHP. Thermo-optical Effect in Phase-Change Nanophotonics Acs Photonics. 3: 828-835. DOI: 10.1021/Acsphotonics.6B00032  0.443
2015 Rong Y, Sheng Y, Pacios M, Wang X, He Z, Bhaskaran H, Warner JH. Electroluminescence Dynamics across Grain Boundary Regions of Monolayer Tungsten Disulfide. Acs Nano. PMID 26636982 DOI: 10.1021/Acsnano.5B06408  0.337
2015 Rong Y, He K, Pacios M, Robertson AW, Bhaskaran H, Warner JH. Controlled preferential oxidation of grain boundaries in monolayer tungsten disulfide for direct optical imaging. Acs Nano. 9: 3695-703. PMID 25870912 DOI: 10.1021/Acsnano.5B00852  0.319
2015 Kumar M, Bhaskaran H. Ultrasensitive room-temperature piezoresistive transduction in graphene-based nanoelectromechanical systems. Nano Letters. 15: 2562-7. PMID 25723099 DOI: 10.1021/Acs.Nanolett.5B00129  0.59
2015 Hosseini P, Sebastian A, Papandreou N, Wright CD, Bhaskaran H. Accumulation-based computing using phase-change memories with FET access devices Ieee Electron Device Letters. 36: 975-977. DOI: 10.1109/Led.2015.2457243  0.421
2015 Hosseini P, Kumar M, Bhaskaran H. 2-D materials as a functional platform for phase change tunable NEMS Ieee Access. 3: 737-742. DOI: 10.1109/Access.2015.2439572  0.386
2015 Rios C, Stegmaier M, Hosseini P, Wang D, Scherer T, Wright CD, Bhaskaran H, Pernice WHP. Integrated all-photonic non-volatile multi-level memory Nature Photonics. 9: 725-732. DOI: 10.1038/Nphoton.2015.182  0.391
2015 Nazeer H, Bhaskaran H, Woldering LA, Abelmann L. Young's modulus and residual stress of GeSbTe phase-change thin films Thin Solid Films. 592: 69-75. DOI: 10.1016/J.Tsf.2015.08.049  0.323
2014 Hosseini P, Wright CD, Bhaskaran H. An optoelectronic framework enabled by low-dimensional phase-change films. Nature. 511: 206-11. PMID 25008527 DOI: 10.1038/Nature13487  0.683
2014 Rios C, Hosseini P, Wright CD, Bhaskaran H, Pernice WH. On-chip photonic memory elements employing phase-change materials. Advanced Materials (Deerfield Beach, Fla.). 26: 1372-7. PMID 24293359 DOI: 10.1002/Adma.201304476  0.667
2014 Engstrom DS, Porter B, Pacios M, Bhaskaran H. Additive nanomanufacturing - A review Journal of Materials Research. 29: 1792-1816. DOI: 10.1557/Jmr.2014.159  0.642
2014 Wang S, Rong Y, Fan Y, Pacios M, Bhaskaran H, He K, Warner JH. Shape evolution of monolayer MoS2 crystals grown by chemical vapor deposition Chemistry of Materials. 26: 6371-6379. DOI: 10.1021/Cm5025662  0.311
2013 Porter BF, Abelmann L, Bhaskaran H. Design parameters for voltage-controllable directed assembly of single nanoparticles. Nanotechnology. 24: 405304. PMID 24029752 DOI: 10.1088/0957-4484/24/40/405304  0.618
2012 Pernice WHP, Bhaskaran H. Photonic non-volatile memories using phase change materials Applied Physics Letters. 101. DOI: 10.1063/1.4758996  0.434
2011 Bhaskaran H, Li M, Garcia-Sanchez D, Zhao P, Takeuchi I, Tang HX. Active microcantilevers based on piezoresistive ferromagnetic thin films Applied Physics Letters. 98. DOI: 10.1063/1.3533390  0.431
2010 Bhaskaran H, Gotsmann B, Sebastian A, Drechsler U, Lantz MA, Despont M, Jaroenapibal P, Carpick RW, Chen Y, Sridharan K. Ultralow nanoscale wear through atom-by-atom attrition in silicon-containing diamond-like carbon. Nature Nanotechnology. 5: 181-5. PMID 20118919 DOI: 10.1038/Nnano.2010.3  0.305
2009 Bhaskaran H, Sebastian A, Pauza A, Pozidis H, Despont M. Nanoscale phase transformation in Ge2Sb2Te5 using encapsulated scanning probes and retraction force microscopy. The Review of Scientific Instruments. 80: 083701. PMID 19725656 DOI: 10.1063/1.3204449  0.388
2005 Pelekhov DV, Selcu C, Banerjee P, Chung Fong K, Chris Hammel P, Bhaskaran H, Schwab K. Light-free magnetic resonance force microscopy for studies of electron spin polarized systems Journal of Magnetism and Magnetic Materials. 286: 324-328. DOI: 10.1016/J.Jmmm.2004.09.088  0.611
2003 Swaminathan R, Bhaskaran H, Sandborn PA, Subramanian G, Deeds MA, Cochran KR. Reliability Assessment of Delamination in Chip-to-Chip Bonded MEMS Packaging Ieee Transactions On Advanced Packaging. 26: 141-151. DOI: 10.1109/Tadvp.2003.817344  0.753
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