☰

Zlatko Sitar - Publications

Affiliations: 
Materials Science and Engineering North Carolina State University, Raleigh, NC 
Area:
Materials Science Engineering
Website:
https://www.mse.ncsu.edu/alumni/halloffame/zlatko-sitar/#:~:text=Dr.,GaN%2C%20AlN%2C%20and%20diamond.
Tree Info Similar researchers PubMed Report error

330 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Gacevic Z, Grandal J, Guo Q, Kirste R, Varela M, Sitar Z, Sanchez-Garcia MA. Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy. Nanotechnology. PMID 33535196 DOI: 10.1088/1361-6528/abe2c7  0.356
2020 Guo Q, Kirste R, Reddy P, Mecouch W, Guan Y, Mita S, Washiyama S, Tweedie J, Sitar Z, Collazo R. Impact of the effective refractive index in AlGaN-based mid-UV laser structures on waveguiding Japanese Journal of Applied Physics. 59: 91001. DOI: 10.35848/1347-4065/Abab44  0.628
2020 Reddy P, Khachariya D, Szymanski D, Breckenridge MH, Sarkar B, Pavlidis S, Collazo R, Sitar Z, Kohn E. Role of polarity in SiN on Al/GaN and the pathway to stable contacts Semiconductor Science and Technology. 35: 55007. DOI: 10.1088/1361-6641/Ab7775  0.559
2020 Amano H, Collazo R, Santi Cd, Einfeldt S, Funato M, Glaab J, Hagedorn S, Hirano A, Hirayama H, Ishii R, Kashima Y, Kawakami Y, Kirste R, Kneissl M, Martin RW, ... ... Sitar Z, et al. The 2020 UV Emitter Roadmap Journal of Physics D. DOI: 10.1088/1361-6463/Aba64C  0.508
2020 Bagheri P, Reddy P, Kim JH, Rounds R, Sochacki T, Kirste R, Bockowski M, Collazo R, Sitar Z. Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN Applied Physics Letters. 117: 82101. DOI: 10.1063/5.0018824  0.569
2020 Khachariya D, Szymanski D, Sengupta R, Reddy P, Kohn E, Sitar Z, Collazo R, Pavlidis S. Chemical treatment effects on Schottky contacts to metalorganic chemical vapor deposited n-type N-polar GaN Journal of Applied Physics. 128: 64501. DOI: 10.1063/5.0015140  0.618
2020 Baker JN, Bowes PC, Harris JS, Collazo R, Sitar Z, Irving DL. Complexes and compensation in degenerately donor doped GaN Applied Physics Letters. 117: 102109. DOI: 10.1063/5.0013988  0.586
2020 Vetter E, Biliroglu M, Seyitliyev D, Reddy P, Kirste R, Sitar Z, Collazo R, Gundogdu K, Sun D. Observation of carrier concentration dependent spintronic terahertz emission from n-GaN/NiFe heterostructures Applied Physics Letters. 117: 93502. DOI: 10.1063/5.0011009  0.581
2020 Bagheri P, Kirste R, Reddy P, Washiyama S, Mita S, Sarkar B, Collazo R, Sitar Z. The nature of the DX state in Ge-doped AlGaN Applied Physics Letters. 116: 222102. DOI: 10.1063/5.0008362  0.668
2020 Washiyama S, Guan Y, Mita S, Collazo R, Sitar Z. Recovery kinetics in high temperature annealed AlN heteroepitaxial films Journal of Applied Physics. 127: 115301. DOI: 10.1063/5.0002891  0.679
2020 Hayden Breckenridge M, Guo Q, Klump A, Sarkar B, Guan Y, Tweedie J, Kirste R, Mita S, Reddy P, Collazo R, Sitar Z. Shallow Si donor in ion-implanted homoepitaxial AlN Applied Physics Letters. 116: 172103. DOI: 10.1063/1.5144080  0.664
2020 Reddy P, Bryan Z, Bryan I, Kim JH, Washiyama S, Kirste R, Mita S, Tweedie J, Irving DL, Sitar Z, Collazo R. Pinning of energy transitions of defects, complexes, and surface states in AlGaN alloys Applied Physics Letters. 116: 032102. DOI: 10.1063/1.5140995  0.656
2020 Reddy P, Hayden Breckenridge M, Guo Q, Klump A, Khachariya D, Pavlidis S, Mecouch W, Mita S, Moody B, Tweedie J, Kirste R, Kohn E, Collazo R, Sitar Z. High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates Applied Physics Letters. 116: 081101. DOI: 10.1063/1.5138127  0.684
2020 Washiyama S, Reddy P, Sarkar B, Breckenridge MH, Guo Q, Bagheri P, Klump A, Kirste R, Tweedie J, Mita S, Sitar Z, Collazo R. The role of chemical potential in compensation control in Si:AlGaN Journal of Applied Physics. 127: 105702. DOI: 10.1063/1.5132953  0.697
2020 Klump A, Hoffmann MP, Kaess F, Tweedie J, Reddy P, Kirste R, Sitar Z, Collazo R. Control of passivation and compensation in Mg-doped GaN by defect quasi Fermi level control Journal of Applied Physics. 127: 045702. DOI: 10.1063/1.5126004  0.592
2020 Yamamoto R, Takekawa N, Goto K, Nagashima T, Dalmau R, Schlesser R, Murakami H, Collazo R, Monemar B, Sitar Z, Kumagai Y. Hydride vapor phase epitaxy of Si-doped AlN layers using SiCl4 as a doping gas Journal of Crystal Growth. 545: 125730. DOI: 10.1016/J.Jcrysgro.2020.125730  0.768
2020 Liu Q, Fujimoto N, Shen J, Nitta S, Tanaka A, Honda Y, Sitar Z, Boćkowski M, Kumagai Y, Amano H. Lattice bow in thick, homoepitaxial GaN layers for vertical power devices Journal of Crystal Growth. 539: 125643. DOI: 10.1016/J.Jcrysgro.2020.125643  0.401
2020 Wang Y, Huynh K, Liao ME, Yu H, Bai T, Tweedie J, Breckenridge MH, Collazo R, Sitar Z, Bockowski M, Liu Y, Goorsky MS. Strain Recovery and Defect Characterization in Mg‐Implanted Homoepitaxial GaN on High‐Quality GaN Substrates Physica Status Solidi (B). 257: 1900705. DOI: 10.1002/Pssb.201900705  0.576
2019 Guo Q, Kirste R, Mita S, Tweedie J, Reddy P, Washiyama S, Breckenridge MH, Collazo R, Sitar Z. The polarization field in Al-rich AlGaN multiple quantum wells Japanese Journal of Applied Physics. 58: SCCC10. DOI: 10.7567/1347-4065/Ab07A9  0.661
2019 Harris JS, Gaddy BE, Collazo R, Sitar Z, Irving DL. Oxygen and silicon point defects in Al0.65Ga0.35N Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.054604  0.56
2019 Guo Q, Kirste R, Mita S, Tweedie J, Reddy P, Moody B, Guan Y, Washiyama S, Klump A, Sitar Z, Collazo R. Design of AlGaN-based quantum structures for low threshold UVC lasers Journal of Applied Physics. 126: 223101. DOI: 10.1063/1.5125256  0.68
2019 Chichibu SF, Kojima K, Hazu K, Ishikawa Y, Furusawa K, Mita S, Collazo R, Sitar Z, Uedono A. In-plane optical polarization and dynamic properties of the near-band-edge emission of an m-plane freestanding AlN substrate and a homoepitaxial film Applied Physics Letters. 115: 151903. DOI: 10.1063/1.5116900  0.704
2019 Alden D, Troha T, Kirste R, Mita S, Guo Q, Hoffmann A, Zgonik M, Collazo R, Sitar Z. Quasi-phase-matched second harmonic generation of UV light using AlN waveguides Applied Physics Letters. 114: 103504. DOI: 10.1063/1.5087058  0.663
2019 Houston Dycus J, Washiyama S, Eldred TB, Guan Y, Kirste R, Mita S, Sitar Z, Collazo R, LeBeau JM. The role of transient surface morphology on composition control in AlGaN layers and wells Applied Physics Letters. 114: 031602. DOI: 10.1063/1.5063933  0.711
2019 Kelley KP, Runnerstrom EL, Sachet E, Shelton CT, Grimley ED, Klump A, LeBeau JM, Sitar Z, Suen JY, Padilla WJ, Maria J. Multiple Epsilon-Near-Zero Resonances in Multilayered Cadmium Oxide: Designing Metamaterial-Like Optical Properties in Monolithic Materials Acs Photonics. 6: 1139-1145. DOI: 10.1021/Acsphotonics.9B00367  0.354
2019 Liu Z, Nitta S, Robin Y, Kushimoto M, Deki M, Honda Y, Pristovsek M, Sitar Z, Amano H. Corrigendum to “Morphological study of InGaN on GaN substrate by supersaturation” [J. Cryst. Growth 508 (2019) 58–65] Journal of Crystal Growth. 514: 13. DOI: 10.1016/J.Jcrysgro.2019.02.058  0.371
2019 Bobea Graziano M, Bryan I, Bryan Z, Kirste R, Tweedie J, Collazo R, Sitar Z. Structural characteristics of m-plane AlN substrates and homoepitaxial films Journal of Crystal Growth. 507: 389-394. DOI: 10.1016/J.Jcrysgro.2018.07.012  0.645
2018 Dycus JH, Mirrielees KJ, Grimley ED, Kirste R, Mita S, Sitar Z, Collazo R, Irving D, LeBeau JM. Structure of Ultra-thin Native Oxides on III-Nitride Surfaces. Acs Applied Materials & Interfaces. PMID 29558103 DOI: 10.1021/Acsami.8B00845  0.672
2018 Kirste R, Guo Q, Dycus JH, Franke A, Mita S, Sarkar B, Reddy P, LeBeau JM, Collazo R, Sitar Z. 6 kW/cm2 UVC laser threshold in optically pumped lasers achieved by controlling point defect formation Applied Physics Express. 11: 082101. DOI: 10.7567/Apex.11.082101  0.67
2018 Rounds R, Sarkar B, Klump A, Hartmann C, Nagashima T, Kirste R, Franke A, Bickermann M, Kumagai Y, Sitar Z, Collazo R. Thermal conductivity of single-crystalline AlN Applied Physics Express. 11: 071001. DOI: 10.7567/Apex.11.071001  0.569
2018 Rigler M, Troha T, Guo W, Kirste R, Bryan I, Collazo R, Sitar Z, Zgonik M. Second-Harmonic Generation of Blue Light in GaN Waveguides Applied Sciences. 8: 1218. DOI: 10.3390/App8081218  0.599
2018 Reddy P, Washiyama S, Mecouch W, Hernandez-Balderrama LH, Kaess F, Hayden Breckenridge M, Sarkar B, Haidet BB, Franke A, Kohn E, Collazo R, Sitar Z. Plasma enhanced chemical vapor deposition of SiO2and SiNxon AlGaN: Band offsets and interface studies as a function of Al composition Journal of Vacuum Science & Technology A. 36: 061101. DOI: 10.1116/1.5050501  0.59
2018 Klump A, Zhou C, Stevie FA, Collazo R, Sitar Z. Improvement in detection limit for time-of-flight SIMS analysis of dopants in GaN structures Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36: 03F102. DOI: 10.1116/1.5013001  0.523
2018 Alden D, Harris J, Bryan Z, Baker J, Reddy P, Mita S, Callsen G, Hoffmann A, Irving D, Collazo R, Sitar Z. Point-Defect Nature of the Ultraviolet Absorption Band in AlN Physical Review Applied. 9. DOI: 10.1103/Physrevapplied.9.054036  0.649
2018 Rounds R, Sarkar B, Sochacki T, Bockowski M, Imanishi M, Mori Y, Kirste R, Collazo R, Sitar Z. Thermal conductivity of GaN single crystals: Influence of impurities incorporated in different growth processes Journal of Applied Physics. 124: 105106. DOI: 10.1063/1.5047531  0.575
2018 Washiyama S, Reddy P, Kaess F, Kirste R, Mita S, Collazo R, Sitar Z. A thermodynamic supersaturation model for the growth of aluminum gallium nitride by metalorganic chemical vapor deposition Journal of Applied Physics. 124: 115304. DOI: 10.1063/1.5045058  0.69
2018 Rounds R, Sarkar B, Alden D, Guo Q, Klump A, Hartmann C, Nagashima T, Kirste R, Franke A, Bickermann M, Kumagai Y, Sitar Z, Collazo R. The influence of point defects on the thermal conductivity of AlN crystals Journal of Applied Physics. 123: 185107. DOI: 10.1063/1.5028141  0.569
2018 Harris JS, Baker JN, Gaddy BE, Bryan I, Bryan Z, Mirrielees KJ, Reddy P, Collazo R, Sitar Z, Irving DL. On compensation in Si-doped AlN Applied Physics Letters. 112: 152101. DOI: 10.1063/1.5022794  0.603
2018 Paisley EA, Brumbach MT, Shelton CT, Allerman AA, Atcitty S, Rost CM, Ohlhausen JA, Doyle BL, Sitar Z, Maria J, Ihlefeld JF. Nitride surface chemistry influence on band offsets at epitaxial oxide/GaN interfaces Applied Physics Letters. 112: 092903. DOI: 10.1063/1.5013605  0.42
2018 Dhall R, Vigil-Fowler D, Houston Dycus J, Kirste R, Mita S, Sitar Z, Collazo R, LeBeau JM. Probing collective oscillation ofd-orbital electrons at the nanoscale Applied Physics Letters. 112: 061102. DOI: 10.1063/1.5012742  0.652
2018 Bryan I, Bryan Z, Washiyama S, Reddy P, Gaddy B, Sarkar B, Breckenridge MH, Guo Q, Bobea M, Tweedie J, Mita S, Irving D, Collazo R, Sitar Z. Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD Applied Physics Letters. 112: 062102. DOI: 10.1063/1.5011984  0.709
2017 Haidet BB, Sarkar B, Reddy P, Bryan I, Bryan Z, Kirste R, Collazo R, Sitar Z. Nonlinear analysis of vanadium- and titanium-based contacts to Al-rich n-AlGaN Japanese Journal of Applied Physics. 56: 100302. DOI: 10.7567/Jjap.56.100302  0.563
2017 Sarkar B, Haidet BB, Reddy P, Kirste R, Collazo R, Sitar Z. Performance improvement of ohmic contacts on Al-rich n-AlGaN grown on single crystal AlN substrate using reactive ion etching surface treatment Applied Physics Express. 10: 071001. DOI: 10.7567/Apex.10.071001  0.6
2017 Sarkar B, Reddy P, Kaess F, Haidet B, Tweedie J, Mita S, Kirste R, Kohn E, Collazo R, Sitar Z. (Invited) Material Considerations for the Development of III-Nitride Power Devices Ecs Transactions. 80: 29-36. DOI: 10.1149/08007.0029ECST  0.412
2017 Reddy P, Washiyama S, Kaess F, Kirste R, Mita S, Collazo R, Sitar Z. Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN Journal of Applied Physics. 122: 245702. DOI: 10.1063/1.5002682  0.698
2017 Reddy P, Kaess F, Tweedie J, Kirste R, Mita S, Collazo R, Sitar Z. Defect quasi Fermi level control-based CN reduction in GaN: Evidence for the role of minority carriers Applied Physics Letters. 111: 152101. DOI: 10.1063/1.5000720  0.674
2017 Sarkar B, Mita S, Reddy P, Klump A, Kaess F, Tweedie J, Bryan I, Bryan Z, Kirste R, Kohn E, Collazo R, Sitar Z. High free carrier concentration in p-GaN grown on AlN substrates Applied Physics Letters. 111: 032109. DOI: 10.1063/1.4995239  0.707
2017 Shelton CT, Bryan I, Paisley EA, Sachet E, Ihlefeld JF, Lavrik N, Collazo R, Sitar Z, Maria J. Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy Apl Materials. 5: 096109. DOI: 10.1063/1.4993840  0.629
2017 Reddy P, Sarkar B, Kaess F, Gerhold M, Kohn E, Collazo R, Sitar Z. Defect-free Ni/GaN Schottky barrier behavior with high temperature stability Applied Physics Letters. 110: 011603. DOI: 10.1063/1.4973762  0.582
2017 Dycus JH, Mirrielees KJ, Grimley ED, Dhall R, Kirste R, Mita S, Sitar Z, Collazo R, Irving DL, LeBeau JM. Structure and Chemistry of Oxide Surface Reconstructions in III-Nitrides Observed using STEM EELS Microscopy and Microanalysis. 23: 1444-1445. DOI: 10.1017/S1431927617007887  0.632
2017 Sarkar B, Reddy P, Klump A, Kaess F, Rounds R, Kirste R, Mita S, Kohn E, Collazo R, Sitar Z. On Ni/Au Alloyed Contacts to Mg-Doped GaN Journal of Electronic Materials. 47: 305-311. DOI: 10.1007/S11664-017-5775-3  0.661
2017 Majkić A, Franke A, Kirste R, Schlesser R, Collazo R, Sitar Z, Zgonik M. Optical nonlinear and electro-optical coefficients in bulk aluminium nitride single crystals Physica Status Solidi (B). 254: 1700077. DOI: 10.1002/Pssb.201700077  0.528
2017 Lamprecht M, Jmerik VN, Collazo R, Sitar Z, Ivanov SV, Thonke K. Model for the deep defect-related emission bands between 1.4 and 2.4 eV in AlN Physica Status Solidi (B). 254: 1600714. DOI: 10.1002/Pssb.201600714  0.577
2017 Thonke K, Lamprecht M, Collazo R, Sitar Z. Optical signatures of silicon and oxygen related DX centers in AlN Physica Status Solidi (a). 214: 1600749. DOI: 10.1002/Pssa.201600749  0.598
2017 Tsao JY, Chowdhury S, Hollis MA, Jena D, Johnson NM, Jones KA, Kaplar RJ, Rajan S, Van de Walle CG, Bellotti E, Chua CL, Collazo R, Coltrin ME, Cooper JA, Evans KR, ... ... Sitar Z, et al. Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges Advanced Electronic Materials. 4: 1600501. DOI: 10.1002/Aelm.201600501  0.496
2016 Huang L, Li G, Gurarslan A, Yu Y, Kirste R, Guo W, Zhao J, Collazo R, Sitar Z, Parsons GN, Kudenov M, Cao L. Atomically Thin MoS2 Narrowband and Broadband Light Superabsorbers. Acs Nano. PMID 27483193 DOI: 10.1021/Acsnano.6B02195  0.547
2016 Troha T, Rigler M, Alden D, Bryan I, Guo W, Kirste R, Mita S, Gerhold MD, Collazo R, Sitar Z, Zgonik M. UV second harmonic generation in AlN waveguides with modal phase matching Optical Materials Express. 6: 2014. DOI: 10.1364/Ome.6.002014  0.674
2016 Franke A, Hoffmann MP, Hernandez-Balderrama L, Kaess F, Bryan I, Washiyama S, Bobea M, Tweedie J, Kirste R, Gerhold M, Collazo R, Sitar Z. Strain engineered high reflectivity DBRs in the deep UV Proceedings of Spie. 9748. DOI: 10.1117/12.2211700  0.616
2016 Mohn S, Stolyarchuk N, Markurt T, Kirste R, Hoffmann MP, Collazo R, Courville A, Di Felice R, Sitar Z, Vennéguès P, Albrecht M. Polarity Control in Group-III Nitrides beyond Pragmatism Physical Review Applied. 5. DOI: 10.1103/Physrevapplied.5.054004  0.533
2016 Kaess F, Reddy P, Alden D, Klump A, Hernandez-Balderrama LH, Franke A, Kirste R, Hoffmann A, Collazo R, Sitar Z. The effect of illumination power density on carbon defect configuration in silicon doped GaN Journal of Applied Physics. 120: 235705. DOI: 10.1063/1.4972468  0.575
2016 Reddy P, Hoffmann MP, Kaess F, Bryan Z, Bryan I, Bobea M, Klump A, Tweedie J, Kirste R, Mita S, Gerhold M, Collazo R, Sitar Z. Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control Journal of Applied Physics. 120: 185704. DOI: 10.1063/1.4967397  0.66
2016 Franke A, Hoffmann MP, Kirste R, Bobea M, Tweedie J, Kaess F, Gerhold M, Collazo R, Sitar Z. High reflectivity III-nitride UV-C distributed Bragg reflectors for vertical cavity emitting lasers Journal of Applied Physics. 120: 135703. DOI: 10.1063/1.4963831  0.607
2016 Kaess F, Mita S, Xie J, Reddy P, Klump A, Hernandez-Balderrama LH, Washiyama S, Franke A, Kirste R, Hoffmann A, Collazo R, Sitar Z. Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition Journal of Applied Physics. 120: 105701. DOI: 10.1063/1.4962017  0.694
2016 Alden D, Guo W, Kirste R, Kaess F, Bryan I, Troha T, Bagal A, Reddy P, Hernandez-Balderrama LH, Franke A, Mita S, Chang C, Hoffmann A, Zgonik M, Collazo R, ... Sitar Z, et al. Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications Applied Physics Letters. 108: 261106. DOI: 10.1063/1.4955033  0.698
2016 Lamprecht M, Grund C, Neuschl B, Thonke K, Bryan Z, Collazo R, Sitar Z. Very slow decay of a defect related emission band at 2.4 eV in AlN: Signatures of the Si related shallow DX state Journal of Applied Physics. 119. DOI: 10.1063/1.4946828  0.572
2016 Reddy P, Washiyama S, Kaess F, Hayden Breckenridge M, Hernandez-Balderrama LH, Haidet BB, Alden D, Franke A, Sarkar B, Kohn E, Collazo R, Sitar Z. High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies Journal of Applied Physics. 119. DOI: 10.1063/1.4945775  0.608
2016 Bryan I, Bryan Z, Mita S, Rice A, Hussey L, Shelton C, Tweedie J, Maria J, Collazo R, Sitar Z. The role of surface kinetics on composition and quality of AlGaN Journal of Crystal Growth. 451: 65-71. DOI: 10.1016/J.Jcrysgro.2016.06.055  0.821
2016 Tojo S, Yamamoto R, Tanaka R, Thieu QT, Togashi R, Nagashima T, Kinoshita T, Dalmau R, Schlesser R, Murakami H, Collazo R, Koukitu A, Monemar B, Sitar Z, Kumagai Y. Influence of high-temperature processing on the surface properties of bulk AlN substrates Journal of Crystal Growth. 446: 33-38. DOI: 10.1016/J.Jcrysgro.2016.04.030  0.761
2016 Bryan I, Bryan Z, Mita S, Rice A, Tweedie J, Collazo R, Sitar Z. Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides Journal of Crystal Growth. 438: 81-89. DOI: 10.1016/J.Jcrysgro.2015.12.022  0.699
2016 Lamprecht M, Grund C, Bauer S, Collazo R, Sitar Z, Thonke K. Slow decay of a defect-related emission band at 2.05 eV in AlN: Signatures of oxygen-related DX states Physica Status Solidi (B). 254: 1600338. DOI: 10.1002/Pssb.201600338  0.562
2015 Kinoshita T, Nagashima T, Obata T, Takashima S, Yamamoto R, Togashi R, Kumagai Y, Schlesser R, Collazo R, Koukitu A, Sitar Z. Fabrication of vertical Schottky barrier diodes on n-type freestanding AlN substrates grown by hydride vapor phase epitaxy Applied Physics Express. 8: 061003. DOI: 10.7567/Apex.8.061003  0.435
2015 Rigler M, Buh J, Hoffmann MP, Kirste R, Bobea M, Mita S, Gerhold MD, Collazo R, Sitar Z, Zgonik M. Optical characterization of Al- and N-polar AlN waveguides for integrated optics Applied Physics Express. 8. DOI: 10.7567/Apex.8.042603  0.695
2015 Losego MD, Paisley EA, Craft HS, Lam PG, Sachet E, Mita S, Collazo R, Sitar Z, Maria JP. Selective area epitaxy of magnesium oxide thin films on gallium nitride surfaces Journal of Materials Research. DOI: 10.1557/Jmr.2015.332  0.701
2015 Majkić A, Puc U, Franke A, Kirste R, Collazo R, Sitar Z, Zgonik M. Optical properties of aluminum nitride single crystals in the THz region Optical Materials Express. 5: 2106-2111. DOI: 10.1364/Ome.5.002106  0.56
2015 Reddy P, Bryan I, Bryan Z, Tweedie J, Washiyama S, Kirste R, Mita S, Collazo R, Sitar Z. Charge neutrality levels, barrier heights, and band offsets at polar AlGaN Applied Physics Letters. 107. DOI: 10.1063/1.4930026  0.711
2015 Haidet BB, Bryan I, Reddy P, Bryan Z, Collazo R, Sitar Z. A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN Journal of Applied Physics. 117. DOI: 10.1063/1.4923062  0.615
2015 Bryan Z, Bryan I, Mita S, Tweedie J, Sitar Z, Collazo R. Strain dependence on polarization properties of AlGaN and AlGaN-based ultraviolet lasers grown on AlN substrates Applied Physics Letters. 106. DOI: 10.1063/1.4922385  0.699
2015 Bryan Z, Bryan I, Xie J, Mita S, Sitar Z, Collazo R. High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates Applied Physics Letters. 106. DOI: 10.1063/1.4917540  0.701
2015 Guo W, Kirste R, Bryan Z, Bryan I, Gerhold M, Collazo R, Sitar Z. Nanostructure surface patterning of GaN thin films and application to AlGaN/AlN multiple quantum wells: A way towards light extraction efficiency enhancement of III-nitride based light emitting diodes Journal of Applied Physics. 117. DOI: 10.1063/1.4915903  0.564
2015 Guo W, Kirste R, Bryan I, Bryan Z, Hussey L, Reddy P, Tweedie J, Collazo R, Sitar Z. KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode Applied Physics Letters. 106. DOI: 10.1063/1.4913705  0.799
2015 Jones KA, Chow TP, Wraback M, Shatalov M, Sitar Z, Shahedipour F, Udwary K, Tompa GS. AlGaN devices and growth of device structures Journal of Materials Science. 50: 3267-3307. DOI: 10.1007/S10853-015-8878-3  0.409
2014 Hoffmann MP, Tweedie J, Kirste R, Bryan Z, Bryan I, Gerhold M, Sitar Z, Collazo R. Point defect management in GaN by Fermi-level control during growth Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2041018  0.591
2014 Callsen G, Wagner MR, Reparaz JS, Nippert F, Kure T, Kalinowski S, Hoffmann A, Ford MJ, Phillips MR, Dalmau RF, Schlesser R, Collazo R, Sitar Z. Phonon pressure coefficients and deformation potentials of wurtzite AlN determined by uniaxial pressure-dependent Raman measurements Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.205206  0.721
2014 Goñi AR, Kaess F, Reparaz JS, Alonso MI, Garriga M, Callsen G, Wagner MR, Hoffmann A, Sitar Z. Dependence on pressure of the refractive indices of wurtzite ZnO, GaN, and AlN Physical Review B. 90. DOI: 10.1103/Physrevb.90.045208  0.328
2014 Bryan Z, Bryan I, Gaddy BE, Reddy P, Hussey L, Bobea M, Guo W, Hoffmann M, Kirste R, Tweedie J, Gerhold M, Irving DL, Sitar Z, Collazo R. Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN Applied Physics Letters. 105. DOI: 10.1063/1.4903058  0.805
2014 Reddy P, Bryan I, Bryan Z, Tweedie J, Kirste R, Collazo R, Sitar Z. Schottky contact formation on polar and non-polar AlN Journal of Applied Physics. 116. DOI: 10.1063/1.4901954  0.591
2014 Bryan I, Bryan Z, Bobea M, Hussey L, Kirste R, Collazo R, Sitar Z. Homoepitaxial AlN thin films deposited on m-plane (1100) AlN substrates by metalorganic chemical vapor deposition Journal of Applied Physics. 116. DOI: 10.1063/1.4897233  0.818
2014 Reddy P, Bryan I, Bryan Z, Guo W, Hussey L, Collazo R, Sitar Z. The effect of polarity and surface states on the Fermi level at III-nitride surfaces Journal of Applied Physics. 116. DOI: 10.1063/1.4896377  0.791
2014 Gaddy BE, Bryan Z, Bryan I, Xie J, Dalmau R, Moody B, Kumagai Y, Nagashima T, Kubota Y, Kinoshita T, Koukitu A, Kirste R, Sitar Z, Collazo R, Irving DL. The role of the carbon-silicon complex in eliminating deep ultraviolet absorption in AlN Applied Physics Letters. 104. DOI: 10.1063/1.4878657  0.736
2014 Bryan Z, Bryan I, Bobea M, Hussey L, Kirste R, Sitar Z, Collazo R. Exciton transitions and oxygen as a donor in m -plane AlN homoepitaxial films Journal of Applied Physics. 115. DOI: 10.1063/1.4870284  0.793
2014 Guo W, Bryan Z, Xie J, Kirste R, Mita S, Bryan I, Hussey L, Bobea M, Haidet B, Gerhold M, Collazo R, Sitar Z. Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates Journal of Applied Physics. 115: 103108. DOI: 10.1063/1.4868678  0.809
2014 Shelton CT, Sachet E, Paisley EA, Hoffmann MP, Rajan J, Collazo R, Sitar Z, Maria JP. Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures Journal of Applied Physics. 115. DOI: 10.1063/1.4863120  0.604
2014 Hussey L, White RM, Kirste R, Mita S, Bryan I, Guo W, Osterman K, Haidet B, Bryan Z, Bobea M, Collazo R, Sitar Z. Sapphire decomposition and inversion domains in N-polar aluminum nitride Applied Physics Letters. 104. DOI: 10.1063/1.4862982  0.801
2014 Paisley EA, Gaddy BE, Lebeau JM, Shelton CT, Biegalski MD, Christen HM, Losego MD, Mita S, Collazo R, Sitar Z, Irving DL, Maria JP. Smooth cubic commensurate oxides on gallium nitride Journal of Applied Physics. 115. DOI: 10.1063/1.4861172  0.716
2014 Hussey L, Bryan I, Kirste R, Guo W, Bryan Z, Mita S, Collazo R, Sitar Z. Direct observation of the polarity control mechanism in aluminum nitride grown on sapphire by aberration corrected scanning transmission electron microscopy Microscopy and Microanalysis. 20: 162-163. DOI: 10.1017/S1431927614002530  0.796
2014 Sochacki T, Bryan Z, Amilusik M, Bobea M, Fijalkowski M, Bryan I, Lucznik B, Collazo R, Weyher JL, Kucharski R, Grzegory I, Bockowski M, Sitar Z. HVPE-GaN grown on MOCVD-GaN/sapphire template and ammonothermal GaN seeds: Comparison of structural, optical, and electrical properties Journal of Crystal Growth. 394: 55-60. DOI: 10.1016/J.Jcrysgro.2014.02.020  0.655
2014 Zhou T, Raghothamachar B, Wu F, Dalmau R, Moody B, Craft S, Schlesser R, Dudley M, Sitar Z. Characterization of threading dislocations in PVT-grown ALN substrates via x-ray topography and ray tracing simulation Journal of Electronic Materials. 43: 838-842. DOI: 10.1007/S11664-013-2968-2  0.661
2014 Kuittinen T, Tuomisto F, Kumagai Y, Nagashima T, Kinoshita T, Koukitu A, Collazo R, Sitar Z. Vacancy defects in UV-transparent HVPE-AlN Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 405-407. DOI: 10.1002/Pssc.201300529  0.621
2014 Bryan I, Akouala CR, Tweedie J, Bryan Z, Rice A, Kirste R, Collazo R, Sitar Z. Surface preparation of non-polar single-crystalline AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 454-457. DOI: 10.1002/Pssc.201300401  0.584
2014 Kirste R, Mita S, Hoffmann MP, Hussey L, Guo W, Bryan I, Bryan Z, Tweedie J, Gerhold M, Hoffmann A, Collazo R, Sitar Z. Properties of AlN based lateral polarity structures Physica Status Solidi (C). 11: 261-264. DOI: 10.1002/Pssc.201300287  0.817
2014 Hoffmann MP, Kirste R, Mita S, Guo W, Tweedie J, Bobea M, Bryan I, Bryan Z, Gerhold M, Collazo R, Sitar Z. Growth and characterization of Al x Ga1−x N lateral polarity structures Physica Status Solidi (a). 212: 1039-1042. DOI: 10.1002/Pssa.201431740  0.679
2013 Freedman JP, Leach JH, Preble EA, Sitar Z, Davis RF, Malen JA. Universal phonon mean free path spectra in crystalline semiconductors at high temperature. Scientific Reports. 3: 2963. PMID 24129328 DOI: 10.1038/Srep02963  0.608
2013 Makowski MS, Bryan I, Sitar Z, Arellano C, Xie J, Collazo R, Ivanisevic A. Erratum: "Kinase detection with gallium nitride based high electron mobility transistors" [Appl. Phys. Lett. 103, 013701 (2013)]. Applied Physics Letters. 103: 89902. PMID 24046484 DOI: 10.1063/1.4819200  0.518
2013 Makowski MS, Bryan I, Sitar Z, Arellano C, Xie J, Collazo R, Ivanisevic A. Kinase detection with gallium nitride based high electron mobility transistors. Applied Physics Letters. 103: 13701. PMID 23918992 DOI: 10.1063/1.4812987  0.509
2013 Foster CM, Collazo R, Sitar Z, Ivanisevic A. Cell behavior on gallium nitride surfaces: peptide affinity attachment versus covalent functionalization. Langmuir : the Acs Journal of Surfaces and Colloids. 29: 8377-84. PMID 23745578 DOI: 10.1021/La401503B  0.528
2013 Makowski MS, Kim S, Gaillard M, Janes D, Manfra MJ, Bryan I, Sitar Z, Arellano C, Xie J, Collazo R, Ivanisevic A. Physisorption of functionalized gold nanoparticles on AlGaN/GaN high electron mobility transistors for sensing applications. Applied Physics Letters. 102: 74102. PMID 23509411 DOI: 10.1063/1.4791788  0.512
2013 Foster CM, Collazo R, Sitar Z, Ivanisevic A. Aqueous stability of Ga- and N-polar gallium nitride. Langmuir : the Acs Journal of Surfaces and Colloids. 29: 216-20. PMID 23227805 DOI: 10.1021/La304039N  0.575
2013 Kinoshita T, Obata T, Nagashima T, Yanagi H, Moody B, Mita S, Inoue SI, Kumagai Y, Koukitu A, Sitar Z. Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy Applied Physics Express. 6. DOI: 10.7567/Apex.6.092103  0.557
2013 Sochacki T, Bryan Z, Amilusik M, Collazo R, Lucznik B, Weyher JL, Nowak G, Sadovyi B, Kamler G, Kucharski R, Zajac M, Doradzinski R, Dwilinski R, Grzegory I, Bockowski M, ... Sitar Z, et al. Preparation of free-standing gan substrates from thick gan layers crystallized by hydride vapor phase epitaxy on ammonothermally grown GaN seeds Applied Physics Express. 6. DOI: 10.7567/Apex.6.075504  0.625
2013 Hoffmann MP, Gerhold M, Kirste R, Rice A, Akouala C, Xie JQ, Mita S, Collazo R, Sitar Z. Fabrication and characterization of lateral polar GaN structures for second harmonic generation Proceedings of Spie. 8631. DOI: 10.1117/12.2008827  0.736
2013 Kirste R, Hoffmann MP, Sachet E, Bobea M, Bryan Z, Bryan I, Nenstiel C, Hoffmann A, Maria JP, Collazo R, Sitar Z. Ge doped GaN with controllable high carrier concentration for plasmonic applications Applied Physics Letters. 103. DOI: 10.1063/1.4848555  0.593
2013 Paisley EA, Craft HS, Losego MD, Lu H, Gruverman A, Collazo R, Sitar Z, Maria J. Publisher's Note: “Epitaxial lead zirconate titanate on gallium nitride” [J. Appl. Phys. 113, 074107 (2013)] Journal of Applied Physics. 114: 239901. DOI: 10.1063/1.4842135  0.489
2013 Skuridina D, Dinh DV, Lacroix B, Ruterana P, Hoffmann M, Sitar Z, Pristovsek M, Kneissl M, Vogt P. Polarity determination of polar and semipolar (112̄2) InN and GaN layers by valence band photoemission spectroscopy Journal of Applied Physics. 114. DOI: 10.1063/1.4828487  0.39
2013 Gaddy BE, Bryan Z, Bryan I, Kirste R, Xie J, Dalmau R, Moody B, Kumagai Y, Nagashima T, Kubota Y, Kinoshita T, Koukitu A, Sitar Z, Collazo R, Irving DL. Vacancy compensation and related donor-acceptor pair recombination in bulk AlN Applied Physics Letters. 103. DOI: 10.1063/1.4824731  0.737
2013 Chichibu SF, Hazu K, Ishikawa Y, Tashiro M, Ohtomo T, Furusawa K, Uedono A, Mita S, Xie J, Collazo R, Sitar Z. Excitonic emission dynamics in homoepitaxial AlN films studied using polarized and spatio-time-resolved cathodoluminescence measurements Applied Physics Letters. 103: 142103. DOI: 10.1063/1.4823826  0.704
2013 Neuschl B, Thonke K, Feneberg M, Goldhahn R, Wunderer T, Yang Z, Johnson NM, Xie J, Mita S, Rice A, Collazo R, Sitar Z. Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions Applied Physics Letters. 103. DOI: 10.1063/1.4821183  0.684
2013 Kirste R, Mita S, Hussey L, Hoffmann MP, Guo W, Bryan I, Bryan Z, Tweedie J, Xie J, Gerhold M, Collazo R, Sitar Z. Polarity control and growth of lateral polarity structures in AlN Applied Physics Letters. 102: 181913. DOI: 10.1063/1.4804575  0.811
2013 Xie J, Mita S, Bryan Z, Guo W, Hussey L, Moody B, Schlesser R, Kirste R, Gerhold M, Collazo R, Sitar Z. Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures Applied Physics Letters. 102. DOI: 10.1063/1.4803689  0.792
2013 Rigler M, Zgonik M, Hoffmann MP, Kirste R, Bobea M, Collazo R, Sitar Z, Mita S, Gerhold M. Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4800554  0.688
2013 Bobea M, Tweedie J, Bryan I, Bryan Z, Rice A, Dalmau R, Xie J, Collazo R, Sitar Z. X-ray characterization techniques for the assessment of surface damage in crystalline wafers: A model study in AlN Journal of Applied Physics. 113. DOI: 10.1063/1.4798352  0.736
2013 Kirste R, Hoffmann MP, Tweedie J, Bryan Z, Callsen G, Kure T, Nenstiel C, Wagner MR, Collazo R, Hoffmann A, Sitar Z. Compensation effects in GaN:Mg probed by Raman spectroscopy and photoluminescence measurements Journal of Applied Physics. 113: 103504. DOI: 10.1063/1.4794094  0.594
2013 Bryan I, Rice A, Hussey L, Bryan Z, Bobea M, Mita S, Xie J, Kirste R, Collazo R, Sitar Z. Strain relaxation by pitting in AlN thin films deposited by metalorganic chemical vapor deposition Applied Physics Letters. 102. DOI: 10.1063/1.4792694  0.804
2013 Paisley EA, Craft HS, Losego MD, Lu H, Gruverman A, Collazo R, Sitar Z, Maria JP. Epitaxial PbxZr1-xTiO3 on GaN Journal of Applied Physics. 113. DOI: 10.1063/1.4792599  0.643
2013 Guo W, Xie J, Akouala C, Mita S, Rice A, Tweedie J, Bryan I, Collazo R, Sitar Z. Comparative study of etching high crystalline quality AlN and GaN Journal of Crystal Growth. 366: 20-25. DOI: 10.1016/J.Jcrysgro.2012.12.141  0.704
2012 Railsback JG, Singh A, Pearce RC, McKnight TE, Collazo R, Sitar Z, Yingling YG, Melechko AV. Weakly charged cationic nanoparticles induce DNA bending and strand separation. Advanced Materials (Deerfield Beach, Fla.). 24: 4261-5. PMID 22711427 DOI: 10.1002/Adma.201104891  0.48
2012 Raghothamachar B, Dalmau R, Moody B, Craft S, Schlesser R, Xie J, Collazo R, Dudley M, Sitar Z. Low defect density bulk AlN substrates for high performance electronics and optoelectronics Materials Science Forum. 717: 1287-1290. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.1287  0.752
2012 Nagashima T, Kubota Y, Kinoshita T, Kumagai Y, Xie J, Collazo R, Murakami H, Okamoto H, Koukitu A, Sitar Z. Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport Applied Physics Express. 5: 125501. DOI: 10.1143/Apex.5.125501  0.599
2012 Kinoshita T, Hironaka K, Obata T, Nagashima T, Dalmau R, Schlesser R, Moody B, Xie J, Inoue SI, Kumagai Y, Koukitu A, Sitar Z. Deep-ultraviolet light-emitting diodes fabricated on aln substrates prepared by hydride vapor phase epitaxy Applied Physics Express. 5. DOI: 10.1143/Apex.5.122101  0.702
2012 Kumagai Y, Kubota Y, Nagashima T, Kinoshita T, Dalmau R, Schlesser R, Moody B, Xie J, Murakami H, Koukitu A, Sitar Z. Preparation of a freestanding AIN substrate from a thick AIN layer grown by hydride vapor phase epitaxy on a bulk AIN substrate prepared by physical vapor transport Applied Physics Express. 5. DOI: 10.1143/Apex.5.055504  0.7
2012 Callsen G, Wagner MR, Kure T, Reparaz JS, Bügler M, Brunnmeier J, Nenstiel C, Hoffmann A, Hoffmann M, Tweedie J, Bryan Z, Aygun S, Kirste R, Collazo R, Sitar Z. Optical signature of Mg-doped GaN: Transfer processes Physical Review B. 86. DOI: 10.1103/Physrevb.86.075207  0.574
2012 Hussey L, Mita S, Xie J, Guo W, Akouala CR, Rajan J, Bryan I, Collazo R, Sitar Z. Lateral epitaxial overgrowth of nitrogen polar GaN on smooth nitrogen polar GaN templates by metalorganic chemical vapor deposition Journal of Applied Physics. 112. DOI: 10.1063/1.4768526  0.823
2012 Paisley EA, Shelton TC, Mita S, Collazo R, Christen HM, Sitar Z, Biegalski MD, Maria JP. Surfactant assisted growth of MgO films on GaN Applied Physics Letters. 101. DOI: 10.1063/1.4748886  0.724
2012 Collazo R, Xie J, Gaddy BE, Bryan Z, Kirste R, Hoffmann M, Dalmau R, Moody B, Kumagai Y, Nagashima T, Kubota Y, Kinoshita T, Koukitu A, Irving DL, Sitar Z. On the origin of the 265 nm absorption band in AlN bulk crystals Applied Physics Letters. 100. DOI: 10.1063/1.4717623  0.742
2012 Bryan Z, Hoffmann M, Tweedie J, Kirste R, Callsen G, Bryan I, Rice A, Bobea M, Mita S, Xie J, Sitar Z, Collazo R. Fermi Level Control of Point Defects During Growth of Mg-Doped GaN Journal of Electronic Materials. 42: 815-819. DOI: 10.1007/S11664-012-2342-9  0.693
2012 Tweedie J, Collazo R, Rice A, Mita S, Xie J, Akouala RC, Sitar Z. Schottky barrier and interface chemistry for Ni contacted to Al 0.8Ga 0.2N grown on c-oriented AlN single crystal substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 584-587. DOI: 10.1002/Pssc.201100435  0.711
2012 Wunderer T, Chua CL, Northrup JE, Yang Z, Johnson NM, Kneissl M, Garrett GA, Shen H, Wraback M, Moody B, Craft HS, Schlesser R, Dalmau RF, Sitar Z. Optically pumped UV lasers grown on bulk AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 822-825. DOI: 10.1002/Pssc.201100424  0.689
2012 Neuschl B, Thonke K, Feneberg M, Mita S, Xie J, Dalmau R, Collazo R, Sitar Z. Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN Physica Status Solidi (B). 249: 511-515. DOI: 10.1002/Pssb.201100381  0.8
2012 Railsback JG, Singh A, Pearce RC, McKnight TE, Collazo R, Sitar Z, Yingling YG, Melechko AV. Gold Nanoparticles: Weakly Charged Cationic Nanoparticles Induce DNA Bending and Strand Separation (Adv. Mater. 31/2012) Advanced Materials. 24: 4221-4221. DOI: 10.1002/Adma.201290188  0.469
2011 Paisley EA, Losego MD, Gaddy BE, Tweedie JS, Collazo R, Sitar Z, Irving DL, Maria JP. Surfactant-enabled epitaxy through control of growth mode with chemical boundary conditions. Nature Communications. 2: 461. PMID 21897372 DOI: 10.1038/Ncomms1470  0.611
2011 Dalmau R, Moody B, Schlesser R, Mita S, Xie J, Feneberg M, Neuschl B, Thonke K, Collazo R, Rice A, Tweedie J, Sitar Z. Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates Journal of the Electrochemical Society. 158: H530-H535. DOI: 10.1149/1.3560527  0.802
2011 Xie J, Mita S, Collazo R, Rice A, Tweedie J, Sitar Z. Fermi level effect on strain of Si-doped GaN Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.878726  0.694
2011 Kirste R, Collazo R, Callsen G, Wagner MR, Kure T, Sebastian Reparaz J, Mita S, Xie J, Rice A, Tweedie J, Sitar Z, Hoffmann A. Temperature dependent photoluminescence of lateral polarity junctions of metal organic chemical vapor deposition grown GaN Journal of Applied Physics. 110: 093503. DOI: 10.1063/1.3656987  0.624
2011 Xie J, Mita S, Hussey L, Rice A, Tweedie J, Lebeau J, Collazo R, Sitar Z. On the strain in n-type GaN Applied Physics Letters. 99. DOI: 10.1063/1.3647772  0.809
2011 Xie J, Mita S, Rice A, Tweedie J, Hussey L, Collazo R, Sitar Z. Strain in Si doped GaN and the Fermi level effect Applied Physics Letters. 98. DOI: 10.1063/1.3589978  0.8
2011 Craft HS, Rice AL, Collazo R, Sitar Z, Maria JP. Spectroscopic measurements of the surface stoichiometry of chemical vapor deposited GaN Applied Physics Letters. 98. DOI: 10.1063/1.3554762  0.62
2011 Buegler M, Gamage S, Atalay R, Wang J, Senevirathna MKI, Kirste R, Xu T, Jamil M, Ferguson I, Tweedie J, Collazo R, Hoffmann A, Sitar Z, Dietz N. Growth temperature and growth rate dependency on reactor pressure for InN epilayers grown by HPCVD Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2059-2062. DOI: 10.1002/Pssc.201001067  0.591
2011 Mita S, Collazo R, Rice A, Tweedie J, Xie J, Dalmau R, Sitar Z. Impact of gallium supersaturation on the growth of N-polar GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2078-2080. DOI: 10.1002/Pssc.201001063  0.805
2011 Xie J, Mia S, Dalmau R, Collazo R, Rice A, Tweedie J, Sitar Z. Ni/Au Schottky diodes on AlxGa1-xN (0.7<x<1) grown on AlN single crystal substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2407-2409. DOI: 10.1002/Pssc.201001009  0.765
2011 Collazo R, Mita S, Xie J, Rice A, Tweedie J, Dalmau R, Sitar Z. Progress on n-type doping of algan alloys on aln single crystal substrates for uv optoelectronic applications Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2031-2033. DOI: 10.1002/Pssc.201000964  0.807
2011 Dalmau R, Moody B, Xie J, Collazo R, Sitar Z. Characterization of dislocation arrays in AlN single crystals grown by PVT Physica Status Solidi (a) Applications and Materials Science. 208: 1545-1547. DOI: 10.1002/Pssa.201000957  0.764
2011 Feneberg M, Neuschl B, Thonke K, Collazo R, Rice A, Sitar Z, Dalmau R, Xie J, Mita S, Goldhahn R. Sharp bound and free exciton lines from homoepitaxial AlN Physica Status Solidi (a). 208: 1520-1522. DOI: 10.1002/Pssa.201000947  0.775
2010 Losego MD, Craft HS, Paisley EA, Mita S, Collazo R, Sitar Z, Maria JP. Critical examination of growth rate for magnesium oxide (MgO) thin films deposited by molecular beam epitaxy with a molecular oxygen flux Journal of Materials Research. 25: 670-679. DOI: 10.1557/Jmr.2010.0096  0.708
2010 Buegler M, Gamage S, Atalay R, Wang J, Senevirathna I, Kirste R, Xu T, Jamil M, Ferguson I, Tweedie J, Collazo R, Hoffmann A, Sitar Z, Dietz N. Reactor pressure - Growth temperature relation for InN epilayers grown by high-pressure CVD Proceedings of Spie - the International Society For Optical Engineering. 7784. DOI: 10.1117/12.860952  0.576
2010 Koechlin M, Sulser F, Sitar Z, Poberaj G, Günter P. Free-standing lithium niobate microring resonators for hybrid integrated optics Ieee Photonics Technology Letters. 22: 251-253. DOI: 10.1109/Lpt.2009.2038174  0.313
2010 Xie J, Mita S, Collazo R, Rice A, Tweedie J, Sitar Z. The effect of N-polar GaN domains as Ohmic contacts Applied Physics Letters. 97. DOI: 10.1063/1.3491173  0.712
2010 Rice A, Collazo R, Tweedie J, Dalmau R, Mita S, Xie J, Sitar Z. Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition Journal of Applied Physics. 108. DOI: 10.1063/1.3467522  0.808
2010 Tweedie J, Collazo R, Rice A, Xie J, Mita S, Dalmau R, Sitar Z. X-ray characterization of composition and relaxation of Alx Ga1-xN (0<x<1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy Journal of Applied Physics. 108. DOI: 10.1063/1.3457149  0.793
2010 Herro ZG, Zhuang D, Schlesser R, Sitar Z. Growth of AlN single crystalline boules Journal of Crystal Growth. 312: 2519-2521. DOI: 10.1016/J.Jcrysgro.2010.04.005  0.374
2010 Rice A, Collazo R, Tweedie J, Xie J, Mita S, Sitar Z. Linear dependency of Al-mole fraction with group-III precursor flows in AlxGa1-xN (0≤x≤1) deposition by LP OMVPE Journal of Crystal Growth. 312: 1321-1324. DOI: 10.1016/J.Jcrysgro.2009.09.011  0.688
2010 Kirste R, Wagner MR, Schulze JH, Strittmatter A, Collazo R, Sitar Z, Alevli M, Dietz N, Hoffmann A. Optical properties of InN grown on templates with controlled surface polarities Physica Status Solidi (a) Applications and Materials Science. 207: 2351-2354. DOI: 10.1002/Pssa.201026086  0.643
2010 Collazo R, Mita S, Xie J, Rice A, Tweedie J, Dalmau R, Sitar Z. Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity Physica Status Solidi (a) Applications and Materials Science. 207: 45-48. DOI: 10.1002/Pssa.200982629  0.791
2009 Ehrentraut D, Sitar Z. Advances in Bulk Crystal Growth of AIN and GaN Mrs Bulletin. 34: 259-265. DOI: 10.1557/Mrs2009.76  0.415
2009 Lu P, Collazo R, Dalmau RF, Durkaya G, Dietz N, Raghothamachar B, Dudley M, Sitar Z. Seeded growth of AlN bulk crystals in m- and c-orientation Journal of Crystal Growth. 312: 58-63. DOI: 10.1016/J.Jcrysgro.2009.10.008  0.752
2009 Mita S, Collazo R, Sitar Z. Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor deposition Journal of Crystal Growth. 311: 3044-3048. DOI: 10.1016/J.Jcrysgro.2009.01.075  0.708
2009 Losego MD, Fitting Kourkoutis L, Mita S, Craft HS, Muller DA, Collazo R, Sitar Z, Maria JP. Epitaxial Ba0.5Sr0.5TiO3-GaN heterostructures with abrupt interfaces Journal of Crystal Growth. 311: 1106-1109. DOI: 10.1016/J.Jcrysgro.2008.11.085  0.729
2008 Craft HS, Collazo R, Losego MD, Sitar Z, Maria JP. Surface water reactivity of polycrystalline MgO and CaO films investigated using x-ray photoelectron spectroscopy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 1507-1510. DOI: 10.1116/1.3000058  0.573
2008 Lu P, Collazo R, Dalmau RF, Durkaya G, Dietz N, Sitar Z. Different optical absorption edges in AlN bulk crystals grown in m- and c -orientations Applied Physics Letters. 93. DOI: 10.1063/1.2996413  0.746
2008 Kim HJ, Choi S, Yoo D, Ryou JH, Dupuis RD, Dalmau RF, Lu P, Sitar Z. Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition Applied Physics Letters. 93. DOI: 10.1063/1.2959064  0.705
2008 Mita S, Collazo R, Rice A, Dalmau RF, Sitar Z. Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition Journal of Applied Physics. 104. DOI: 10.1063/1.2952027  0.791
2008 Craft HS, Collazo R, Losego MD, Mita S, Sitar Z, Maria JP. Spectroscopic analysis of the epitaxial CaO (111)-GaN (0002) interface Applied Physics Letters. 92. DOI: 10.1063/1.2887878  0.707
2008 Dietz N, Alevli M, Atalay R, Durkaya G, Collazo R, Tweedie J, Mita S, Sitar Z. The influence of substrate polarity on the structural quality of InN layers grown by high-pressure chemical vapor deposition Applied Physics Letters. 92. DOI: 10.1063/1.2840192  0.725
2008 Lu P, Edgar JH, Cao C, Hohn K, Dalmau R, Schlesser R, Sitar Z. Seeded growth of AlN on SiC substrates and defect characterization Journal of Crystal Growth. 310: 2464-2470. DOI: 10.1016/J.Jcrysgro.2008.01.010  0.724
2008 Losego MD, Mita S, Collazo R, Sitar Z, Maria JP. Epitaxial growth of the metastable phase ytterbium monoxide on gallium nitride surfaces Journal of Crystal Growth. 310: 51-56. DOI: 10.1016/J.Jcrysgro.2007.10.002  0.714
2008 Cai D, Mecouch WJ, Zheng LL, Zhang H, Sitar Z. Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth International Journal of Heat and Mass Transfer. 51: 1264-1280. DOI: 10.1016/J.Ijheatmasstransfer.2007.12.004  0.804
2008 Collazo R, Mita S, Rice A, Dalmau R, Wellenius P, Muth J, Sitar Z. Fabrication of a GaN p/n lateral polarity junction by polar doping selectivity Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1977-1979. DOI: 10.1002/Pssc.200778624  0.797
2008 Liu F, Collazo R, Mita S, Sitar Z, Pennycook SJ, Duscher G. Direct observation of inversion domain boundaries of GaN on c-sapphire at sub-ångstrom resolution Advanced Materials. 20: 2162-2165. DOI: 10.1002/Adma.200702522  0.698
2008 Liu F, Collazo R, Mita S, Sitar Z, Duscher G. Three-dimensional geometry of nanometer-scale AIN pits: A new template for quantum dots? Advanced Materials. 20: 134-137. DOI: 10.1002/Adma.200701288  0.671
2007 Li X, Collazo R, Sitar Z. Highly oriented diamond films grown at high growth rate Materials Research Society Symposium Proceedings. 956: 171-176. DOI: 10.1557/Proc-0956-J09-39  0.703
2007 Gu Z, Edgar JH, Raghothamachar B, Dudley M, Zhuang D, Sitar Z, Coffey DW. Sublimation growth of aluminum nitride on silicon carbide substrate with aluminum nitride-silicon carbide alloy transition layer Journal of Materials Research. 22: 675-680. DOI: 10.1557/Jmr.2007.0077  0.416
2007 Losego MD, Mita S, Collazo R, Sitar Z, Maria JP. Epitaxial calcium oxide films deposited on gallium nitride surfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1029-1032. DOI: 10.1116/1.2710243  0.702
2007 Collazo R, Mita S, Rice A, Dalmau RF, Sitar Z. Simultaneous growth of a GaN pn lateral polarity junction by polar selective doping Applied Physics Letters. 91. DOI: 10.1063/1.2816893  0.799
2007 Liu F, Collazo R, Mita S, Sitar Z, Duscher G, Pennycook SJ. The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence Applied Physics Letters. 91. DOI: 10.1063/1.2815748  0.713
2007 Craft HS, Collazo R, Losego MD, Mita S, Sitar Z, Maria JP. Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy Journal of Applied Physics. 102. DOI: 10.1063/1.2785022  0.709
2007 Davis RF, Bishop SM, Mita S, Collazo R, Reitmeier ZJ, Sitar Z. Epitaxial growth of gallium nitride Aip Conference Proceedings. 916: 520-540. DOI: 10.1063/1.2751931  0.353
2007 Neuburger M, Aleksov A, Schlesser R, Kohn E, Sitar Z. Electronic high temperature characteristics of AlN Electronics Letters. 43: 592-594. DOI: 10.1049/El:20070275  0.369
2007 Adekore BT, Callahan MJ, Bouthillette L, Dalmau R, Sitar Z. Synthesis of erbium-doped gallium nitride crystals by the ammonothermal route Journal of Crystal Growth. 308: 71-79. DOI: 10.1016/J.Jcrysgro.2007.07.058  0.724
2007 Cai D, Zheng LL, Zhang H, Zhuang D, Herro ZG, Schlesser R, Sitar Z. Effect of thermal environment evolution on AlN bulk sublimation crystal growth Journal of Crystal Growth. 306: 39-46. DOI: 10.1016/J.Jcrysgro.2007.04.037  0.351
2007 Dalmau R, Collazo R, Mita S, Sitar Z. X-ray photoelectron spectroscopy characterization of aluminum nitride surface oxides: Thermal and hydrothermal evolution Journal of Electronic Materials. 36: 414-419. DOI: 10.1007/S11664-006-0044-X  0.783
2007 Collazo R, Mita S, Dalmau R, Sitar Z. Impact of polarity control and related defects on the electrical properties of GaN grown by MOVPE Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2597-2600. DOI: 10.1002/Pssc.200674874  0.809
2007 Mita S, Collazo R, Dalmau R, Sitar Z. Growth of highly resistive Ga-polar GaN by LP-MOVPE Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2260-2263. DOI: 10.1002/Pssc.200674837  0.808
2006 Raghothamachar B, Dalmau R, Dudley M, Schlesser R, Zhuang D, Herro Z, Sitar Z. Structural characterization of bulk AIN single crystals grown from self-seeding and seeding by SiC substrates Materials Science Forum. 527: 1521-1524. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1521  0.685
2006 Gu Z, Edgar JH, Raghothamachar B, Dudley M, Zhuang D, Sitar Z. The effect of aluminum nitride-silicon carbide alloy buffer layers on the sublimation growth of aluminum nitride on SiC (0001) substrates Materials Science Forum. 527: 1497-1500. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1497  0.41
2006 Zhuang D, Herro ZG, Li X, Schlesser R, Sitar Z. Wet etching of bulk AlN crystals Materials Research Society Symposium Proceedings. 955: 144-149. DOI: 10.1557/Proc-0955-I07-10  0.588
2006 Lu P, Edgar JH, Cao C, Hohn K, Dalmau R, Schlesser R, Sitar Z. Bulk AlN Crystal Growth on SiC Seeds and Defects Study Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I03-07  0.672
2006 Herro ZG, Zhuang D, Schlesser R, Collazo R, Sitar Z. Growth of large AlN single crystals along the [0001] direction Materials Research Society Symposium Proceedings. 892: 499-504. DOI: 10.1557/Proc-0892-Ff21-01  0.613
2006 Shakouri A, Bian Z, Singh R, Zhang Y, Vashaee D, Humphrey TE, Schmidt H, Zide JM, Zeng G, Bahk JH, Gossard AC, Bowers JE, Rawat V, Sands TD, Kim W, ... ... Sitar Z, et al. Solid-state and vacuum thermionic energy conversion Materials Research Society Symposium Proceedings. 886: 245-260. DOI: 10.1557/Proc-0886-F07-01  0.581
2006 Craft HS, Collazo R, Sitar Z, Maria JP. Molecular beam epitaxy of Sm 2O 3, Dy 2O 3, and Ho 2O 3 on Si (111) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2105-2110. DOI: 10.1116/1.2216721  0.603
2006 Aleksov A, Collazo R, Mita S, Schlesser R, Sitar Z. Current-voltage characteristics of n∕n lateral polarity junctions in GaN Applied Physics Letters. 89: 052117. DOI: 10.1063/1.2244046  0.704
2006 Craft HS, Ihlefeld JF, Losego MD, Collazo R, Sitar Z, Maria JP. MgO epitaxy on GaN (0002) surfaces by molecular beam epitaxy Applied Physics Letters. 88. DOI: 10.1063/1.2201041  0.643
2006 Zhuang D, Herro ZG, Schlesser R, Sitar Z. Seeded growth of AlN single crystals by physical vapor transport Journal of Crystal Growth. 287: 372-375. DOI: 10.1016/J.Jcrysgro.2005.11.047  0.395
2006 Raghothamachar B, Bai J, Dudley M, Dalmau R, Zhuang D, Herro Z, Schlesser R, Sitar Z, Wang B, Callahan M, Rakes K, Konkapaka P, Spencer M. Characterization of bulk grown GaN and AlN single crystal materials Journal of Crystal Growth. 287: 349-353. DOI: 10.1016/J.Jcrysgro.2005.11.042  0.697
2006 Collazo R, Mita S, Aleksov A, Schlesser R, Sitar Z. Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers Journal of Crystal Growth. 287: 586-590. DOI: 10.1016/J.Jcrysgro.2005.10.080  0.724
2006 Herro ZG, Zhuang D, Schlesser R, Collazo R, Sitar Z. Seeded growth of AlN on N- and Al-polar 〈0001〉 AlN seeds by physical vapor transport Journal of Crystal Growth. 286: 205-208. DOI: 10.1016/J.Jcrysgro.2005.10.074  0.608
2006 Li X, Perkins J, Collazo R, Nemanich RJ, Sitar Z. Investigation of the effect of the total pressure and methane concentration on the growth rate and quality of diamond thin films grown by MPCVD Diamond and Related Materials. 15: 1784-1788. DOI: 10.1016/J.Diamond.2006.09.008  0.681
2006 Aleksov A, Gobien JM, Li X, Prater JT, Sitar Z. Silicon-on-Diamond - An engineered substrate for electronic applications Diamond and Related Materials. 15: 248-253. DOI: 10.1016/J.Diamond.2005.09.012  0.346
2006 Zhuang D, Herro ZG, Schlesser R, Raghothamachar B, Dudley M, Sitar Z. Seeded growth of AlN crystals on nonpolar seeds via physical vapor transport Journal of Electronic Materials. 35: 1513-1517. DOI: 10.1007/S11664-006-0141-X  0.393
2006 Govindaraju N, Aleksov A, Li X, Okuzumi F, Wolter SD, Collazo R, Prater JT, Sitar Z. Comparative study of textured diamond films by thermal conductivity measurements Applied Physics a: Materials Science and Processing. 85: 331-335. DOI: 10.1007/S00339-006-3697-7  0.738
2006 Adekore BT, Rakes K, Wang B, Callahan MJ, Pendurti S, Sitar Z. Ammonothermal synthesis of aluminum nitride crystals on group III-nitride templates Journal of Electronic Materials. 35: 1104-1111. DOI: 10.1007/Bf02692573  0.456
2006 Mita S, Collazo R, Schlesser R, Sitar Z. Polarity control of LP-MOVPE GaN using N2 as the carrier gas Materials Research Society Symposium Proceedings. 892: 685-690.  0.591
2005 Raghothamachar B, Dudley M, Dalmau R, Schlesser R, Sitar Z. Synchrotron white beam x-ray topography (SWBXT) and high resolution triple axis diffraction studies on AlN layers grown on 4H- And 6H-SiC seeds Materials Research Society Symposium Proceedings. 831: 447-452. DOI: 10.1557/Proc-831-E8.24  0.695
2005 Mecouch WJ, Rodriguez BJ, Reitmeier ZJ, Park JS, Davis RF, Sitar Z. Initial stages of growth of gallium nitride via iodine vapor phase epitaxy Materials Research Society Symposium Proceedings. 831: 185-190. DOI: 10.1557/Proc-831-E3.23  0.819
2005 Mita S, Collazo R, Schlesser R, Sitar Z. Polarity control of GaN films grown by metal organic chemical vapor deposition on (0001) sapphire substrates Materials Research Society Symposium Proceedings. 831: 167-172. DOI: 10.1557/Proc-831-E3.20  0.73
2005 Berkman E, Collazo R, Schiesser R, Sitar Z. Growth of GaN from elemental gallium and ammonia via modified sandwich growth technique Materials Research Society Symposium Proceedings. 831: 727-732. DOI: 10.1557/Proc-831-E11.38  0.714
2005 Zhuang D, Schlesser R, Sitar Z. Grain expansion and subsequent seeded growth of AlN single crystals Materials Research Society Symposium Proceedings. 831: 595-600. DOI: 10.1557/Proc-831-E11.1  0.392
2005 Mita S, Collazo R, Schlesser R, Sitar Z. Polarity Control of LP-MOVPE GaN using N 2 the Carrier Gas Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff27-06  0.666
2005 Chen L, Skromme BJ, Chen C, Sun W, Yang J, Khan MA, Nakarmi ML, Lin JY, Jiang HX, Reitmeyer ZJ, Davis RF, Dalmau RF, Schlesser R, Sitar Z. Optical Reflectance of bulk AlN Crystals and AlN epitaxial films Aip Conference Proceedings. 772: 297-298. DOI: 10.1063/1.1994108  0.672
2005 Freitas JA, Sitar Z. Bulk nitride workshop Journal of Crystal Growth. 281: 1. DOI: 10.1016/J.Jcrysgro.2005.04.026  0.361
2005 Schlesser R, Dalmau R, Zhuang D, Collazo R, Sitar Z. Crucible materials for growth of aluminum nitride crystals Journal of Crystal Growth. 281: 75-80. DOI: 10.1016/J.Jcrysgro.2005.03.014  0.748
2005 Dalmau R, Schlesser R, Rodriguez BJ, Nemanich RJ, Sitar Z. AlN bulk crystals grown on SiC seeds Journal of Crystal Growth. 281: 68-74. DOI: 10.1016/J.Jcrysgro.2005.03.012  0.714
2005 Noveski V, Schlesser R, Raghothamachar B, Dudley M, Mahajan S, Beaudoin S, Sitar Z. Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules Journal of Crystal Growth. 279: 13-19. DOI: 10.1016/J.Jcrysgro.2004.12.027  0.404
2005 Aleksov A, Li X, Govindaraju N, Gobien JM, Wolter SD, Prater JT, Sitar Z. Silicon-on-diamond: An advanced silicon-on-insulator technology Diamond and Related Materials. 14: 308-313. DOI: 10.1016/J.Diamond.2005.01.019  0.659
2005 Aleksov A, Wolter SD, Prater JT, Sitar Z. Fabrication and thermal evaluation of silicon on diamond wafers Journal of Electronic Materials. 34: 1089-1094. DOI: 10.1007/S11664-005-0100-Y  0.383
2005 Yushin GN, Kvit AV, Sitar Z. Transmission electron microscopy studies of the bonded SiC-SiC interface Journal of Materials Science. 40: 4369-4371. DOI: 10.1007/S10853-005-0779-4  0.568
2005 Collazo R, Mita S, Schiesser R, Sitar Z. Polarity control of GaN thin films grown by metalorganic vapor phase epitaxy Physica Status Solidi C: Conferences. 2: 2117-2120. DOI: 10.1002/Pssc.200461546  0.732
2005 Mecouch WJ, Reitmeier ZJ, Park JS, Davis RF, Sitar Z. Growth of gallium nitride via iodine vapor phase growth Physica Status Solidi C: Conferences. 2: 2129-2132. DOI: 10.1002/Pssc.200461532  0.817
2005 Dalmau R, Schiesser R, Sitar Z. Polarity and morphology in seeded growth of bulk AlN on SiC Physica Status Solidi C: Conferences. 2: 2036-2039. DOI: 10.1002/Pssc.200461511  0.719
2005 Senawiratne J, Strassburg M, Dietz N, Haboeck U, Hoffmann A, Noveski V, Dalmau R, Schlesser R, Sitar Z. Raman, photoluminescence and absorption studies on high quality AlN single crystals Physica Status Solidi C: Conferences. 2: 2774-2778. DOI: 10.1002/Pssc.200461509  0.676
2004 Grenko J, Reynolds C, Schlesser R, Bachmann K, Rietmeier Z, Davis RF, Sitar Z. Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures Mrs Internet Journal of Nitride Semiconductor Research. 9. DOI: 10.1557/S1092578300000405  0.394
2004 Noveski V, Schlesser R, Mahajan S, Beaudoin SP, Sitar Z. Growth Of AlN Crystals On AlN/SiC Seeds By AlN Powder Sublimation In Nitrogen Atmosphere Mrs Internet Journal of Nitride Semiconductor Research. 9. DOI: 10.1557/S1092578300000375  0.407
2004 Li H, Chandrasekaran H, Sunkara MK, Collazo R, Sitar Z, Stukowski M, Rajan K. Self-oriented Growth of GaN Films on Molten Gallium Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E11.34  0.619
2004 Collazo R, Schlesser R, Sitar Z. High field transport in AlN International Journal of High Speed Electronics and Systems. 14: 155-174. DOI: 10.1142/S0129156404002284  0.572
2004 Cai D, Wu B, Zheng LL, Zhang H, Mecouch WJ, Sitar Z. Modeling of a gallium nitride epitaxy growth system American Society of Mechanical Engineers, Heat Transfer Division, (Publication) Htd. 375: 133-138. DOI: 10.1115/IMECE2004-59819  0.787
2004 Chen L, Skromme BJ, Dalmau RF, Schlesser R, Sitar Z, Chen C, Sun W, Yang J, Khan MA, Nakarmi ML, Lin JY, Jiang HX. Band edge exciton states in AlN single crystals and epitaxial layers Applied Physics Letters. 85: 4334-4336. DOI: 10.1063/1.1818733  0.676
2004 Strassburg M, Senawiratne J, Dietz N, Haboeck U, Hoffmann A, Noveski V, Dalmau R, Schlesser R, Sitar Z. The growth and optical properties of large, high-quality AlN single crystals Journal of Applied Physics. 96: 5870-5876. DOI: 10.1063/1.1801159  0.685
2004 Grenko JA, Reynolds CL, Schlesser R, Hren JJ, Bachmann K, Sitar Z, Kotula PG. Nanoscale GaN whiskers fabricated by photoelectrochemical etching Journal of Applied Physics. 96: 5185-5188. DOI: 10.1063/1.1788841  0.366
2004 Yushin GN, Sitar Z. Influence of relative wafer rotation on the electrical properties of the bonded SiC/SiC interface Applied Physics Letters. 84: 3993-3995. DOI: 10.1063/1.1753065  0.583
2004 Wolter SD, Borca-Tasciuc D, Chen G, Prater JT, Sitar Z. Processing and thermal properties of highly oriented diamond thin films Thin Solid Films. 469: 105-111. DOI: 10.1016/J.Tsf.2004.08.062  0.374
2004 Brenner DW, Schlesser R, Sitar Z, Dalmau R, Collazo R, Li Y. Model for the influence of boron impurities on the morphology of AlN grown by physical vapor transport Surface Science. 560. DOI: 10.1016/J.Susc.2004.05.003  0.745
2004 Noveski V, Schlesser R, Mahajan S, Beaudoin S, Sitar Z. Mass transfer in AlN crystal growth at high temperatures Journal of Crystal Growth. 264: 369-378. DOI: 10.1016/J.Jcrysgro.2004.01.028  0.37
2004 Yushin GN, Aleksov A, Wolter SD, Okuzumi F, Prater JT, Sitar Z. Wafer bonding of highly oriented diamond to silicon Diamond and Related Materials. 13: 1816-1821. DOI: 10.1016/J.Diamond.2004.04.007  0.598
2003 Dalmau R, Raghothamachar B, Dudley M, Schlesser R, Sitar Z. Crucible selection in AlN bulk crystal growth Materials Research Society Symposium - Proceedings. 798: 287-291. DOI: 10.1557/Proc-798-Y2.9  0.678
2003 Noveski V, Schlesser R, Freitas J, Mahajan S, Beaudoin S, Sitar Z. Vapor phase transport of AlN in an RF heated reactor: Low and high temperature studies Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y2.8  0.402
2003 Yushin GN, Wolter SD, Kvit AV, Collazo R, Prater JT, Sitar Z. Transmission electron miscroscopy study of the fused silicon/diamond interface Materials Research Society Symposium - Proceedings. 768: 39-44. DOI: 10.1557/Proc-768-G2.9  0.711
2003 Chang CS, Chattopadhyay S, Chen LC, Chen KH, Chen CW, Chen YF, Collazo R, Sitar Z. Band-gap dependence of field emission from one-dimensional nanostructures grown onn-type andp-type silicon substrates Physical Review B. 68. DOI: 10.1103/Physrevb.68.125322  0.598
2003 Collazo R, Schlesser R, Roskowski A, Miraglia P, Davis RF, Sitar Z. Electron energy distribution during high-field transport in AIN Journal of Applied Physics. 93: 2765-2771. DOI: 10.1063/1.1543633  0.57
2003 Wolter SD, Yushin GN, Prater JT, Sitar Z. Processing routes for direct bonding of silicon to epitaxially textured diamond Diamond and Related Materials. 12: 257-261. DOI: 10.1016/S0925-9635(02)00392-8  0.624
2003 Wolter SD, Borca-Tasciuc DA, Chen G, Govindaraju N, Collazo R, Okuzumi F, Prater JT, Sitar Z. Thermal conductivity of epitaxially textured diamond films Diamond and Related Materials. 12: 61-64. DOI: 10.1016/S0925-9635(02)00248-0  0.736
2003 Wolter SD, Okuzumi F, Prater JT, Sitar Z. Bias frequency, waveform and duty-cycle effects on the bias-enhanced nucleation of epitaxial diamond Thin Solid Films. 440: 145-151. DOI: 10.1016/S0040-6090(03)00827-7  0.347
2003 Wu B, Ma R, Zhang H, Dudley M, Schlesser R, Sitar Z. Growth Kinetics And Thermal Stress In Aln Bulk Crystal Growth Journal of Crystal Growth. 253: 326-339. DOI: 10.1016/S0022-0248(03)01044-3  0.363
2002 Bogdanov MV, Karpov SY, Kulik AV, Ramm MS, Makarov YN, Schlesser R, Dalmau RF, Sitar Z. Experimental and Theoretical Analysis of Heat and Mass Transport in the System for AlN Bulk Crystal Growth Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L3.33  0.654
2002 Collazo R, Schlesser R, Roskowski A, Davis RF, Sitar Z. Observations of electron velocity overshoot during high-field transport in AlN Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L10.2  0.557
2002 Yushin GN, Kvit AV, Collazo R, Sitar Z. SiC to SiC wafer bonding Materials Research Society Symposium - Proceedings. 742: 91-95. DOI: 10.1557/Proc-742-K2.5  0.69
2002 Collazo R, Liang M, Schlesser R, Sitar Z. The role of adsorbates on the field emission properties of single-walled carbon nanotubes Materials Research Society Symposium - Proceedings. 706: 119-124. DOI: 10.1557/Proc-706-Z5.7.1  0.543
2002 Schlesser R, Dalmau R, Yakimova R, Sitar Z. Growth of AlN bulk crystals from the vapor phase Materials Research Society Symposium - Proceedings. 693: 545-552. DOI: 10.1557/Proc-693-I9.4.1  0.691
2002 Yushin GN, Wolter SD, Kvit AV, Collazo R, Prater JT, Stoner BR, Sitar Z. Wafer bonding of diamond films to silicon for silicon-on-insulator technology Materials Research Society Symposium - Proceedings. 686: 69-74. DOI: 10.1557/Proc-686-A2.6  0.703
2002 Wolter SD, Okuzumi F, Prater JT, Sitar Z. AC vs. DC bias-enhanced nucleation of highly oriented diamond on silicon (100) Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1430720  0.37
2002 Collazo R, Schlesser R, Sitar Z. Experimental observation of electron velocity overshoot in AlN Applied Physics Letters. 81: 5189-5191. DOI: 10.1063/1.1534407  0.581
2002 Yushin GN, Wolter SD, Kvit AV, Collazo R, Stoner BR, Prater JT, Sitar Z. Study of fusion bonding of diamond to silicon for silicon-on-diamond technology Applied Physics Letters. 81: 3275-3277. DOI: 10.1063/1.1516636  0.707
2002 Wolter SD, Yushin GN, Okuzumi F, Stoner BR, Prater JT, Sitar Z. Direct fusion bonding of silicon to polycrystalline diamond Diamond and Related Materials. 11: 482-486. DOI: 10.1016/S0925-9635(01)00608-2  0.587
2002 Collazo R, Schlesser R, Sitar Z. Role of adsorbates in field emission from nanotubes Diamond and Related Materials. 11: 769-773. DOI: 10.1016/S0925-9635(01)00585-4  0.542
2002 Raghothamachar B, Vetter WM, Dudley M, Dalmau R, Schlesser R, Sitar Z, Michaels E, Kolis JW. Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN Journal of Crystal Growth. 246: 271-280. DOI: 10.1016/S0022-0248(02)01751-7  0.683
2002 Schlesser R, Dalmau R, Sitar Z. Seeded growth of AlN bulk single crystals by sublimation Journal of Crystal Growth. 241: 416-420. DOI: 10.1016/S0022-0248(02)01319-2  0.688
2002 Shin H, Thomson DB, Schlesser R, Davis RF, Sitar Z. High temperature nucleation and growth of GaN crystals from the vapor phase Journal of Crystal Growth. 241: 404-415. DOI: 10.1016/S0022-0248(02)01290-3  0.395
2002 Shin H, Arkun E, Thomson D, Miraglia P, Preble E, Schlesser R, Wolter S, Sitar Z, Davis R. Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio Journal of Crystal Growth. 236: 529-537. DOI: 10.1016/S0022-0248(02)00825-4  0.437
2002 Schlesser R, Sitar Z. Growth of bulk AlN crystals by vaporization of aluminum in a nitrogen atmosphere Journal of Crystal Growth. 234: 349-353. DOI: 10.1016/S0022-0248(01)01720-1  0.381
2001 Collazo R, Schlesser R, Roskowski A, Davis RF, Sitar Z. Electron transport in AlN under high electric fields Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I6.45.1  0.575
2001 Collazo R, Schlesser R, Sitar Z. Two field-emission states of single-walled carbon nanotubes Applied Physics Letters. 78: 2058-2060. DOI: 10.1063/1.1361089  0.537
2001 Wolter SD, Schlesser R, Okuzumi F, Prater JT, Sitar Z. Angle-dependent reflectometry as a technique for fast assessment of highly oriented diamond film quality Diamond and Related Materials. 10: 2092-2095. DOI: 10.1016/S0925-9635(01)00487-3  0.345
2001 Wolter SD, Schlesser R, Okuzumi F, Prater JT, Sitar Z. Process optimization in the low-pressure flat flame growth of diamond Diamond and Related Materials. 10: 289-294. DOI: 10.1016/S0925-9635(00)00477-5  0.395
2001 Wolter SD, Prater JT, Sitar Z. Raman spectroscopic characterization of diamond films grown in a low-pressure flat flame Journal of Crystal Growth. 226: 88-94. DOI: 10.1016/S0022-0248(01)01274-X  0.356
2000 Collazo R, Schlesser R, Roskowski A, Davis RF, Sitar Z. Hot Electron Transport in AlN Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G11.33  0.522
2000 Collazo R, Schlesser R, Roskowski A, Davis RF, Sitar Z. Hot electron transport in AlN Journal of Applied Physics. 88: 5865-5869. DOI: 10.1063/1.1318386  0.561
2000 Schiesser R, Collazo R, Bower C, Zhou O, Sitar Z. Energy distribution of field emitted electrons from carbon nanotubes Diamond and Related Materials. 9: 1201-1204. DOI: 10.1016/S0925-9635(99)00277-0  0.577
2000 Balkaş CM, Sitar Z, Bergman L, Shmagin IK, Muth JF, Kolbas R, Nemanich RJ, Davis RF. Growth and characterization of GaN single crystals Journal of Crystal Growth. 208: 100-106. DOI: 10.1016/S0022-0248(99)00445-5  0.436
1999 Park M, Sowers AT, Rinne CL, Schlesser R, Bergman L, Nemanich RJ, Sitar Z, Hren JJ, Cuomo JJ, Zhirnov VV, Choi WB. Effect of nitrogen incorporation on electron emission from chemical vapor deposited diamond Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 734. DOI: 10.1116/1.590630  0.382
1998 Mccarson B, Schlesser R, Sitar Z. Voltage Dependent Field Emission Energy Distribution Analysis of Wide Bandgap Materials Mrs Proceedings. 509. DOI: 10.1557/Proc-509-131  0.309
1998 Yang PC, Wolden CA, Liu W, Schlesser R, Davis RF, Prater JT, Sitar Z. Coalesced oriented diamond films on nickel Journal of Materials Research. 13: 1120-1123. DOI: 10.1557/Jmr.1998.0157  0.431
1998 Choi WB, Schlesser R, Wojak G, Cuomo JJ, Sitar Z, Hren JJ. Electron energy distribution of diamond-coated field emitters Journal of Vacuum Science & Technology B. 16: 716-719. DOI: 10.1116/1.589889  0.347
1998 Ward BL, Nam O, Hartman JD, English SL, McCarson BL, Schlesser R, Sitar Z, Davis RF, Nemanich RJ. Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy Journal of Applied Physics. 84: 5238-5242. DOI: 10.1063/1.368775  0.327
1998 Ronning C, Banks AD, McCarson BL, Schlesser R, Sitar Z, Davis RF, Ward BL, Nemanich RJ. Structural and electronic properties of boron nitride thin films containing silicon Journal of Applied Physics. 84: 5046-5051. DOI: 10.1063/1.368752  0.418
1998 McCarson BL, Schlesser R, Sitar Z. Field emission energy distribution analysis of cubic-BN-coated Mo emitters: Nonlinear behavior Journal of Applied Physics. 84: 3382-3385. DOI: 10.1063/1.368496  0.306
1998 Liu W, Yang PC, Wolden CA, Davis RF, Prater JT, Sitar Z. Transmission electron microscopy analysis of the oriented diamond growth on nickel substrates Journal of Applied Physics. 83: 7658-7663. DOI: 10.1063/1.367885  0.371
1998 McCarson BL, Schlesser R, McClure MT, Sitar Z. Electron emission mechanism from cubic boron nitride-coated molybdenum emitters Applied Physics Letters. 72: 2909-2911. DOI: 10.1063/1.121492  0.304
1998 Wolden CA, Draper CE, Sitar Z, Prater JT. The influence of nitrogen addition on the morphology, growth rate, and Raman spectra of combustion grown diamond Diamond and Related Materials. 7: 1178-1183. DOI: 10.1016/S0925-9635(98)00172-1  0.408
1998 Schlesser R, McClure MT, McCarson BL, Sitar Z. Mechanisms of field emission from diamond coated Mo emitters Diamond and Related Materials. 7: 636-639. DOI: 10.1016/S0925-9635(97)00290-2  0.302
1998 Sitar Z, Liu W, Yang PC, Wolden CA, Schlesser R, Prater JT. Heteroepitaxial nucleation of diamond on nickel Diamond and Related Materials. 7: 276-282. DOI: 10.1016/S0925-9635(97)00244-6  0.406
1998 Yang PC, Liu W, Schlesser R, Wolden CA, Davis RF, Prater JT, Sitar Z. Surface melting in the heteroepitaxial nucleation of diamond on Ni Journal of Crystal Growth. 187: 81-88. DOI: 10.1016/S0022-0248(97)00854-3  0.345
1997 Yang PC, Wolden CA, Liu W, Schlesser R, Davis RF, Prater JT, Sitar Z. Achievement of coalesced oriented diamond films on nickel by optical process control and methane enrichment Materials Research Society Symposium - Proceedings. 483: 213-218. DOI: 10.1557/Proc-483-213  0.412
1997 Balkas CM, Sitar Z, Zheleva T, Bergman L, Muth JF, Shmagin IK, Kolbas R, Nemanich R, Davis RF. Growth of bulk AlN and GaN single crystals by sublimation Materials Research Society Symposium - Proceedings. 449: 41-46. DOI: 10.1557/Proc-449-41  0.407
1997 Wolden CA, Davis RF, Sitar Z, Prater JT. In situ mass spectrometry during diamond chemical vapor deposition using a low pressure flat flame Journal of Materials Research. 12: 2733-2742. DOI: 10.1557/Jmr.1997.0364  0.351
1997 Schlesser R, McCarson BL, McClure MT, Sitar Z. Field emission energy distribution analysis of wide bandgap field emitters Proceedings of the Ieee International Vacuum Microelectronics Conference, Ivmc. 141-145. DOI: 10.1116/1.589882  0.331
1997 McClure MT, Schlesser R, McCarson BL, Sitar Z. Electrical characterization of diamond and graphite coated Mo field emitters Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 2067-2071. DOI: 10.1116/1.589224  0.312
1997 Shen TD, Shmagin I, Koch CC, Kolbas RM, Fahmy Y, Bergman L, Nemanich RJ, McClure MT, Sitar Z, Quan MX. Photoluminescence from mechanically milled Si andSiO2spowders Physical Review B. 55: 7615-7623. DOI: 10.1103/Physrevb.55.7615  0.32
1997 Pierhöfer H, Sitar Z, Gitmans F, Wüest H, Gunter P. New semiconducting substrate for heteroepitaxial growth of K1-yNayTa1-xNbxO3 Ferroelectrics. 201: 269-275. DOI: 10.1080/00150199708228377  0.339
1997 Tao Y, Gitmans F, Sitar Z, Pierhöfer H, Kündig A, Gamboni I, Günter P. Dielectric, pyroelectric and structural properties of LiTaO3 thin films grown on silicon by a modified molecular beam epitaxy Ferroelectrics. 201: 245-253. DOI: 10.1080/00150199708228374  0.445
1997 Schlesser R, McClure MT, McCarson BL, Sitar Z. Bias voltage dependent field-emission energy distribution analysis of wide band-gap field emitters Journal of Applied Physics. 82: 5763-5772. DOI: 10.1063/1.366442  0.334
1997 Shmagin IK, Muth JF, Lee JH, Kolbas RM, Balkas CM, Sitar Z, Davis RF. Optical metastability in bulk GaN single crystals Applied Physics Letters. 71: 455-457. DOI: 10.1063/1.119577  0.384
1997 Yang PC, Schlesser R, Wolden CA, Liu W, Davis RF, Sitar Z, Prater JT. Control of diamond heteroepitaxy on nickel by optical reflectance Applied Physics Letters. 70: 2960-2962. DOI: 10.1063/1.118756  0.357
1997 Schlesser R, McClure MT, Choi WB, Hren JJ, Sitar Z. Energy distribution of field emitted electrons from diamond coated molybdenum tips Applied Physics Letters. 70: 1596-1598. DOI: 10.1063/1.118626  0.304
1997 Wolden CA, Davis RF, Sitar Z, Prater JT. Low-temperature deposition of optically transparent diamond using a low-pressure flat flame Diamond and Related Materials. 6: 1862-1867. DOI: 10.1016/S0925-9635(97)00155-6  0.377
1997 Wolden CA, Han SK, McClure MT, Sitar Z, Prater JT. Highly oriented diamond deposited using a low pressure flat flame Materials Letters. 32: 9-12. DOI: 10.1016/S0167-577X(97)00003-7  0.41
1997 Davis RF, Weeks T, Bremser M, Tanaka S, Kern R, Sitar Z, Ailey K, Perry W, Wang C. Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization Solid-State Electronics. 41: 129-134. DOI: 10.1016/S0038-1101(96)00152-9  0.467
1997 Balkaş CM, Sitar Z, Zheleva T, Bergman L, Nemanich R, Davis RF. Sublimation growth and characterization of bulk aluminum nitride single crystals Journal of Crystal Growth. 179: 363-370. DOI: 10.1016/S0022-0248(97)00160-7  0.425
1997 Davis R, Paisley M, Sitar Z, Kester D, Ailey K, Linthicum K, Rowland L, Tanaka S, Kern R. Gas-source molecular beam epitaxy of III–V nitrides Journal of Crystal Growth. 178: 87-101. DOI: 10.1016/S0022-0248(97)00077-8  0.455
1997 Dietrich T, Schlesser R, Erler B, Kündig A, Sitar Z, Günter P. Epitaxial growth of nonlinear optical 4′-nitrobenzylidene-3-acetamino-4-methoxy-aniline thin films on ethylenediammonium terephthalate single crystals Journal of Crystal Growth. 172: 473-477. DOI: 10.1016/S0022-0248(96)00727-0  0.411
1997 Tao Y, Gitmans F, Sitar Z, Pierhöfer H, Kündig A, Gamboni I, Günter P. Dielectric, pyroelectric and structural properties of LiTaO3 thin films grown on silicon by a modified molecular beam epitaxy Ferroelectrics. 201: 245-253.  0.337
1997 Balkaş CM, Sitar Z, Zheleva T, Bergman L, Nemanich R, Davis RF. Sublimation growth and characterization of bulk aluminum nitride single crystals Journal of Crystal Growth. 179: 363-370.  0.309
1996 Tucker DA, McClure MT, Fathi Z, Sitar Z, Walden B, Sutton WH, Lewis WA, Wei JB. Microwave plasma assisted CVD of diamond on titanium and Ti-6Al-4V Materials Research Society Symposium - Proceedings. 430: 635-640. DOI: 10.1557/Proc-430-635  0.343
1996 Liu W, Yang PC, Tucker DA, Wolden CA, Davis RF, Glass JT, Prater JT, Sitar Z. TEM analysis of the observed phases during the growth of oriented diamond on nickel substrates Materials Research Society Symposium - Proceedings. 423: 457-462. DOI: 10.1557/Proc-423-457  0.391
1996 Dietrich T, Schlesser R, Sitar Z, Gunter P. Growth of organic periodic structures by molecular layer deposition Materials Research Society Symposium - Proceedings. 413: 389-394. DOI: 10.1557/Proc-413-389  0.373
1996 Schlesser R, Dietrich T, Sitar Z, Gunter P. Molecular beam deposition of organic nonlinear optical materials Materials Research Society Symposium - Proceedings. 413: 179-184. DOI: 10.1557/Proc-413-179  0.387
1996 Sitar Z, Gitmans F, Liu W, Gunter P. Homo and heteroepitaxial growth of LiTaO3 and LiNbO3 by MBE Materials Research Society Symposium - Proceedings. 401: 255-260. DOI: 10.1557/Proc-401-255  0.438
1996 Wolden CA, Sitar Z, Davis RF, Prater JT. Textured diamond growth by low pressure flat flame chemical vapor deposition Applied Physics Letters. 69: 2258-2260. DOI: 10.1063/1.117146  0.38
1996 Choi WB, McClure MT, Schlesser R, Sitar Z, Hren JJ. Enhanced field emission from diamond coated molybdenum emitters Journal De Physique. Iv : Jp. 6. DOI: 10.1051/Jp4:1996515  0.305
1996 Davis RF, Tanaka S, Rowland LB, Kern RS, Sitar Z, Ailey SK, Wang C. Growth of SiC and III-V nitride thin films via gas-source molecular beam epitaxy and their characterization Journal of Crystal Growth. 164: 132-142. DOI: 10.1016/0022-0248(95)01023-8  0.439
1995 Davis RF, Weeks TW, Bremser MD, Tanaka S, Kern RS, Sitar Z, Ailey KS, Perry WG, Wang C. Issues and Examples Regarding Growth of AlN, GaN and AlxGa1−xN Thin Films via OMVPE and Gas Source MBE Mrs Proceedings. 395. DOI: 10.1557/Proc-395-3  0.464
1995 Sitar Z, Gutmann R, Pierhofer H, Gunter P. Liquid phase epitaxy of Na1-yKyTa1-xNbxO3 for pyroelectric applications Materials Research Society Symposium - Proceedings. 361: 589-594. DOI: 10.1557/Proc-361-589  0.39
1995 Schlesser R, Dietrich T, Sitar Z, Gitmans F, Kündig A, Eng L, Münch B, Günter P. Organic molecular beam deposition of highly nonlinear optical 4′‐nitrobenzylidene‐3‐acetamino‐4‐methoxy‐aniline Journal of Applied Physics. 78: 4943-4947. DOI: 10.1063/1.359784  0.393
1994 Davis RF, Ailey KS, Kern RS, Kester DJ, Sitar Z, Smith L, Tanaka S, Wang C. Initial Stages of Growth of Thin Films of III-V Nitrides and Silicon Carbide Polytypes by Molecular Beam Epitaxy Mrs Proceedings. 339. DOI: 10.1557/Proc-339-351  0.436
1994 Davis RF, Paisley MJ, Sitar Z, Kester DJ, Ailey KS, Wang C. Deposition of III-N thin films by molecular beam epitaxy Microelectronics Journal. 25: 661-674. DOI: 10.1016/0026-2692(94)90132-5  0.4
1994 Sitar Z, Smith LL, Davis RF. Interface chemistry and surface morphology in the initial stages of growth of GaN and AlN on α-SiC and sapphire Journal of Crystal Growth. 141: 11-21. DOI: 10.1016/0022-0248(94)90086-8  0.456
1993 Sumakeris J, Sitar Z, Ailey-Trent KS, More KL, Davis RF. Layer-by-layer epitaxial growth of GaN at low temperatures Thin Solid Films. 225: 244-249. DOI: 10.1016/0040-6090(93)90163-J  0.425
1991 Sitar Z, Smith LS, Paisley MJ, Davis RF. Morphology and Interface chemistry of the Initial Growth of GAN and ALN on α-SIC and Sapphire Mrs Proceedings. 237. DOI: 10.1557/Proc-237-583  0.448
1991 Sitar Z, Paisley MJ, Yan B, Davis RF, Ruan J, Choyke JW. AlN/GaN superlattices grown by gas source molecular beam epitaxy Thin Solid Films. 200: 311-320. DOI: 10.1016/0040-6090(91)90203-A  0.422
1990 Sitar Z. Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8: 316. DOI: 10.1116/1.585061  0.42
1990 Sitar Z, Paisley MJ, Smith DK, Davis RF. Design and performance of an electron cyclotron resonance plasma source for standard molecular beam epitaxy equipment Review of Scientific Instruments. 61: 2407-2411. DOI: 10.1063/1.1141371  0.323
1989 Sitar Z, Paisley MJ, Yan B, Davis RF. Structural Defects in GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy Mrs Proceedings. 162. DOI: 10.1557/Proc-162-537  0.428
1989 Paisley MJ, Sitar Z, Posthill JB, Davis RF. Growth of cubic phase gallium nitride by modified molecular-beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 7: 701-705. DOI: 10.1116/1.575869  0.444
1988 Paisley MJ, Sitar Z, Carter CH, Davis RF. Growth Of Gallium Nitride On Silicon Carbide By Molecular Beam Epitaxy Proceedings of Spie - the International Society For Optical Engineering. 877: 8-12. DOI: 10.1117/12.943932  0.343
1988 Davis RF, Sitar Z, Williams BE, Kong HS, Kim HJ, Palmour JW, Edmond JA, Ryu J, Glass JT, Carter CH. Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide Materials Science and Engineering B. 1: 77-104. DOI: 10.1016/0921-5107(88)90032-3  0.435
Show low-probability matches.