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Thomas F. Kuech - Publications

Affiliations: 
Chemical Engineering University of Wisconsin, Madison, Madison, WI 
Area:
Chemical Engineering, Biochemistry, Inorganic Chemistry
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462 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Bhat A, Elleuch O, Cui X, Guan Y, Scott S, Kuech TF, Lagally MG. High-Ge-Content SiGe Alloy Single Crystals Using the Nanomembrane Platform. Acs Applied Materials & Interfaces. PMID 32282183 DOI: 10.1021/Acsami.0C02747  0.415
2020 Lucas RC, Morgan D, Kuech TF. Density Functional Theory Study of the Gas Phase and Surface Reaction Kinetics for the MOVPE Growth of GaAsBi. The Journal of Physical Chemistry. A. PMID 32027504 DOI: 10.1021/Acs.Jpca.9B10399  0.412
2020 Chen Y, Zuo P, Guan Y, Yusuf MH, Babcock SE, Kuech TF, Evans PG. Reduction of interface reactions in low-temperature solid-phase epitaxy of ScAlMgO4 on (0001) Al2O3 Crystal Growth & Design. 20: 6001-6007. DOI: 10.1021/Acs.Cgd.0C00721  0.347
2020 Guan Y, Luo G, Morgan D, Babcock SE, Kuech TF. Thermodynamic stability analysis of Bi-containing III-V quaternary alloys and the effect of epitaxial strain Journal of Physics and Chemistry of Solids. 138: 109245. DOI: 10.1016/J.Jpcs.2019.109245  0.331
2020 Guan Y, Rajeev A, Babcock SE, Mawst LJ, Kuech TF. Metal-organic vapor phase epitaxy of the quaternary metastable alloy In1–xGaxAs1−yBiy and its kinetics of growth Journal of Crystal Growth. 538: 125611. DOI: 10.1016/J.Jcrysgro.2020.125611  0.451
2020 Knipfer B, Rajeev A, Isheim D, Kirch J, Babcock S, Kuech T, Earles T, Botez D, Mawst L. Layer-thickness dependence of the compositions in strained III–V superlattices by atom probe tomography Journal of Crystal Growth. 535: 125550. DOI: 10.1016/J.Jcrysgro.2020.125550  0.413
2019 Kim H, Shi B, Lingley Z, Li Q, Rajeev A, Brodie M, Lau KM, Kuech TF, Sin Y, Mawst LJ. Electrically injected 1.64µm emitting InGaAs 3-QW laser diodes grown on mismatched substrates by MOVPE. Optics Express. 27: 33205-33216. PMID 31878394 DOI: 10.1364/Oe.27.033205  0.454
2019 Kim H, Guan Y, Kuech TF, Mawst LJ. Impact of thermal annealing on internal device parameters of GaAs0.965Bi0.035/GaAs0.75P0.25 quantum well lasers Iet Optoelectronics. 13: 12-16. DOI: 10.1049/Iet-Opt.2018.5031  0.323
2019 Yao M, Rawlings JB, Kuech TF. Modeling of transport and reaction in a novel hydride vapor phase epitaxy system Journal of Crystal Growth. 513: 58-68. DOI: 10.1016/J.Jcrysgro.2019.02.046  0.363
2019 Elleuch O, Lekhal K, Guan Y, Kuech TF. Highly tin doped GaAs at low growth temperatures using tetraethyl tin by metal organic vapor phase epitaxy Journal of Crystal Growth. 507: 255-259. DOI: 10.1016/J.Jcrysgro.2018.11.021  0.498
2018 Kim H, Kim K, Guan Y, Lee J, Kuech TF, Mawst LJ. Single junction solar cell employing strain compensated GaAs0.965Bi0.035/GaAs0.75P0.25 multiple quantum wells grown by metal organic vapor phase epitaxy Applied Physics Letters. 112: 251105. DOI: 10.1063/1.5035281  0.372
2018 Kim H, Guan Y, Babcock SE, Kuech TF, Mawst LJ. Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing Journal of Applied Physics. 123: 113102. DOI: 10.1063/1.5017965  0.422
2018 Fang S, Jackson D, Dreibelbis ML, Kuech TF, Hamers RJ. Anode-originated SEI migration contributes to formation of cathode-electrolyte interphase layer Journal of Power Sources. 373: 184-192. DOI: 10.1016/J.Jpowsour.2017.09.050  0.339
2018 Evans PG, Chen Y, Tilka JA, Babcock SE, Kuech TF. Crystallization of amorphous complex oxides: New geometries and new compositions via solid phase epitaxy Current Opinion in Solid State and Materials Science. 22: 229-242. DOI: 10.1016/J.Cossms.2018.09.001  0.321
2018 Rajeev A, Shi B, Li Q, Kirch JD, Cheng M, Tan A, Kim H, Oresick K, Sigler C, Lau KM, Kuech TF, Mawst LJ. III-V Superlattices on InP/Si metamorphic buffer Layers for λ≈4.8 μm quantum cascade lasers Physica Status Solidi (a). 216: 1800493. DOI: 10.1002/Pssa.201800493  0.414
2017 Chen Y, Yusuf MH, Guan Y, Jacobson RB, Lagally MG, Babcock SE, Kuech TF, Evans PG. Distinct nucleation and growth kinetics of amorphous SrTiO3 on (001) SrTiO3 and SiO2/Si: A step towards new architectures. Acs Applied Materials & Interfaces. PMID 29094920 DOI: 10.1021/Acsami.7B12978  0.395
2017 Wood AW, Chen W, Kim H, Guan Y, Forghani K, Anand A, Kuech TF, Mawst LJ, Babcock SE. Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1-x Bi x explored by atom probe tomography and HAADF-STEM. Nanotechnology. 28: 215704. PMID 28471752 DOI: 10.1088/1361-6528/Aa6Cdb  0.369
2017 Laskar MR, Jackson DH, Xu S, Hamers RJ, Morgan D, Kuech TF. Atomic Layer Deposited MgO: A Lower Overpotential Coating for Li[Ni0.5Mn0.3Co0.2]O2 Cathode. Acs Applied Materials & Interfaces. PMID 28252289 DOI: 10.1021/Acsami.6B16562  0.333
2017 Kim H, Guan Y, Forghani K, Kuech TF, Mawst LJ. Strain-compensated Ga(AsP)/Ga(AsBi)/Ga(AsP) quantum-well active-region lasers (Conference Presentation) Proceedings of Spie. 10123: 1012304. DOI: 10.1117/12.2251708  0.38
2017 Luo G, Yang S, Jenness GR, Song Z, Kuech TF, Morgan D. Understanding and reducing deleterious defects in the metastable alloy GaAsBi Npg Asia Materials. 9: e345-e345. DOI: 10.1038/Am.2016.201  0.335
2017 Xu S, Jacobs R, Wolverton C, Kuech T, Morgan D. Nanoscale Voltage Enhancement at Cathode Interfaces in Li-Ion Batteries Chemistry of Materials. 29: 1218-1229. DOI: 10.1021/Acs.Chemmater.6B04590  0.303
2017 Jackson DHK, Kuech TF. Electrochemical effects of annealing on atomic layer deposited Al 2 O 3 coatings on LiNi 0.5 Mn 0.3 Co 0.2 O 2 Journal of Power Sources. 365: 61-67. DOI: 10.1016/J.Jpowsour.2017.08.076  0.339
2017 Kim H, Choi J, Lingley Z, Brodie M, Sin Y, Kuech TF, Gopalan P, Mawst LJ. Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning Journal of Crystal Growth. 465: 48-54. DOI: 10.1016/J.Jcrysgro.2017.02.046  0.401
2017 Guan Y, Forghani K, Kim H, Babcock SE, Mawst LJ, Kuech TF. Surface kinetics study of metal-organic vapor phase epitaxy of GaAs 1−y Bi y on offcut and mesa-patterned GaAs substrates Journal of Crystal Growth. 464: 39-48. DOI: 10.1016/J.Jcrysgro.2017.01.043  0.469
2017 Kim Y, Jackson DHK, Lee D, Choi M, Kim T, Jeong S, Chae H, Kim HW, Park N, Chang H, Kuech TF, Kim HJ. In Situ Electrochemical Activation of Atomic Layer Deposition Coated MoS2 Basal Planes for Efficient Hydrogen Evolution Reaction Advanced Functional Materials. 27: 1701825. DOI: 10.1002/Adfm.201701825  0.333
2016 Laskar MR, Jackson DH, Guan Y, Xu S, Fang S, Dreibelbis M, Mahanthappa MK, Morgan D, Hamers RJ, Kuech TF. Atomic Layer Deposition of Al2O3-Ga2O3 Alloy Coatings for Li[Ni0.5Mn0.3Co0.2]O2 Cathode to Improve Rate Performance in Li-ion Battery. Acs Applied Materials & Interfaces. PMID 27035035 DOI: 10.1021/Acsami.5B11878  0.324
2016 Guan Y, Forghani K, Schulte KL, Babcock S, Mawst L, Kuech TF. Enhanced incorporation of p into tensile-strained GaAs1-yPy layers grown by metal-organic vapor phase epitaxy at very low temperatures Ecs Journal of Solid State Science and Technology. 5: P183-P189. DOI: 10.1149/2.0181603Jss  0.629
2016 Sin Y, Peterson M, Lingley Z, Lalumondiere S, Moss SC, Kim H, Forghani K, Guan Y, Kim K, Lee J, Mawst LJ, Kuech TF, Tatavarti R. Carrier dynamics in QW and bulk bismide and epitaxial lift off GaAs-In(Al)GaP double heterostructures grown by MOVPE for multi-junction solar cells Proceedings of Spie - the International Society For Optical Engineering. 9743. DOI: 10.1117/12.2208804  0.456
2016 Jackson DHK, Laskar MR, Fang S, Xu S, Ellis RG, Li X, Dreibelbis M, Babcock SE, Mahanthappa MK, Morgan D, Hamers RJ, Kuech TF. Optimizing AlF3 atomic layer deposition using trimethylaluminum and TaF5: Application to high voltage Li-ion battery cathodes Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4943385  0.391
2016 Kim T, Wood A, Kim H, Kim Y, Lee J, Peterson M, Sin Y, Moss S, Kuech TF, Babcock S, Mawst LJ. Impact of Sb Incorporation on MOVPE-Grown "Bulk" InGaAs(Sb)N Films for Solar Cell Application Ieee Journal of Photovoltaics. DOI: 10.1109/Jphotov.2016.2598262  0.411
2016 Luo G, Forghani K, Kuech TF, Morgan D. First-principles predictions of electronic properties of GaAs1-x-yPyBix and GaAs1-x-yPyBix-based heterojunctions Applied Physics Letters. 109: 112104. DOI: 10.1063/1.4962729  0.363
2016 Li J, Collar K, Jiao W, Kong W, Kuech TF, Babcock SE, Brown A. Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1-xBix Applied Physics Letters. 108. DOI: 10.1063/1.4953408  0.359
2016 Kuech TF, Babcock SE, Mawst L. Growth far from equilibrium: Examples from III-V semiconductors Applied Physics Reviews. 3. DOI: 10.1063/1.4944801  0.387
2016 Kuech TF. III-V compound semiconductors: Growth and structures Progress in Crystal Growth and Characterization of Materials. DOI: 10.1016/J.Pcrysgrow.2016.04.019  0.384
2016 Kim H, Forghani K, Guan Y, Kim K, Wood AW, Lee J, Babcock SE, Kuech TF, Mawst LJ. Impact of in-situ annealing on dilute-bismide materials and its application to photovoltaics Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2016.04.039  0.418
2016 Chen W, Ronsheim PA, Wood AW, Forghani K, Guan Y, Kuech TF, Babcock SE. Atom probe tomography evidence for uniform incorporation of Bi across the growth front in GaAs1-xBix/GaAs superlattice Journal of Crystal Growth. 446: 27-32. DOI: 10.1016/J.Jcrysgro.2016.04.031  0.366
2016 Rajeev A, Mawst LJ, Kirch JD, Botez D, Miao J, Buelow P, Kuech TF, Li X, Sigler C, Babcock SE, Earles T. Regrowth of quantum cascade laser active regions on metamorphic buffer layers Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2016.01.029  0.444
2016 Schulte KL, Simon J, Roy A, Reedy RC, Young DL, Kuech TF, Ptak AJ. Computational fluid dynamics-aided analysis of a hydride vapor phase epitaxy reactor Journal of Crystal Growth. 434: 138-147. DOI: 10.1016/J.Jcrysgro.2015.10.033  0.621
2015 Jackson DH, O'Neill BJ, Lee J, Huber GW, Dumesic JA, Kuech TF. Tuning Acid-Base Properties Using Mg-Al Oxide Atomic Layer Deposition. Acs Applied Materials & Interfaces. PMID 26168188 DOI: 10.1021/Acsami.5B04107  0.322
2015 Sin Y, Lingley Z, Peterson M, Brodie M, Moss SC, Kim TW, Kim H, Guan Y, Forghani K, Mawst LJ, Kuech TF. Time-resolved PL and TEM studies of MOVPE-grown bulk dilute nitride and bismide quantum well heterostructure Proceedings of Spie - the International Society For Optical Engineering. 9358. DOI: 10.1117/12.2076785  0.423
2015 Chang CC, Kirch JD, Boyle C, Sigler C, Mawst LJ, Botez D, Zutter B, Buelow P, Schulte K, Kuech T, Earles T. Planarized process for resonant leaky-wave coupled phase-locked arrays of mid-IR quantum cascade lasers Proceedings of Spie - the International Society For Optical Engineering. 9382. DOI: 10.1117/12.2075667  0.578
2015 Mawst LJ, Rajeev A, Kirch JD, Kim TW, Botez D, Zutter B, Buelow P, Schulte K, Kuech TF, Wood A, Babcock SE, Earles T. Quantum-cascade-laser active regions on metamorphic buffer layers Proceedings of Spie - the International Society For Optical Engineering. 9370. DOI: 10.1117/12.2075457  0.628
2015 Kim T, Mawst LJ, Kim Y, Kim K, Lee J, Kuech TF. 13.2% efficiency double-hetero structure single-junction InGaAsN solar cells grown by MOVPE Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4906511  0.369
2015 Luo G, Yang S, Li J, Arjmand M, Szlufarska I, Brown AS, Kuech TF, Morgan D. First-principles studies on molecular beam epitaxy growth of GaA s1-x B ix Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.035415  0.446
2015 Kim H, Forghani K, Guan Y, Luo G, Anand A, Morgan D, Kuech TF, Mawst LJ, Lingley ZR, Foran BJ, Sin Y. Strain-compensated GaAs1-yPy/GaAs1-zBiz/GaAs1-yPy quantum wells for laser applications Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/9/094011  0.406
2015 Wheatley R, Kesaria M, Mawst LJ, Kirch JD, Kuech TF, Marshall A, Zhuang QD, Krier A. Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP Applied Physics Letters. 106. DOI: 10.1063/1.4922590  0.361
2015 Li J, Forghani K, Guan Y, Jiao W, Kong W, Collar K, Kim TH, Kuech TF, Brown AS. GaAs1-yBiy Raman signatures: Illuminating relationships between the electrical and optical properties of GaAs1-yBiy and Bi incorporation Aip Advances. 5. DOI: 10.1063/1.4922139  0.322
2015 Wood AW, Guan Y, Forghani K, Anand A, Kuech TF, Babcock SE. Unexpected bismuth concentration profiles in metal-organic vapor phase epitaxy-grown Ga(As1-xBix)/GaAs superlattices revealed by Z-contrast scanning transmission electron microscopy imaging Apl Materials. 3. DOI: 10.1063/1.4915301  0.454
2015 Chang CC, Kirch JD, Buelow P, Boyle C, Kuech TF, Lindberg D, Earles T, Botez D, Mawst LJ. Buried-heterostructure mid-infrared quantum cascade lasers fabricated by nonselective regrowth and chemical polishing Electronics Letters. 51: 1098-1100. DOI: 10.1049/El.2015.1094  0.331
2015 Oneill BJ, Jackson DHK, Lee J, Canlas C, Stair PC, Marshall CL, Elam JW, Kuech TF, Dumesic JA, Huber GW. Catalyst design with atomic layer deposition Acs Catalysis. 5: 1804-1825. DOI: 10.1021/Cs501862H  0.308
2015 Schulte KL, Strand MT, Kuech TF. Evolution of epilayer tilt in thick In<inf>x</inf>Ga<inf>1-x</inf>As metamorphic buffer layers grown by hydride vapor phase epitaxy Journal of Crystal Growth. 426: 283-286. DOI: 10.1016/J.Jcrysgro.2015.05.009  0.625
2015 Forghani K, Guan Y, Wood A, Babock S, Mawst L, Kuech TF. The Effect of the Bi Precursors, (CH3)3Bi and (C2H5)3Bi, on the Metal-Organic Vapor Phase Epitaxy of GaAs1-yBiyFilms Chemical Vapor Deposition. 21: 166-175. DOI: 10.1002/Cvde.201507160  0.388
2014 Sin Y, LaLumondiere S, Wells N, Lingley Z, Presser N, Lotshaw W, Moss SC, Kim TW, Forghani K, Mawst LJ, Kuech TF, Tatavarti R, Wibowo A, Pan N. Carrier Dynamics in MOVPE-Grown Bulk InGaAsNSb Materials and Epitaxial Lift-Off GaAs Double Heterostructures for Multi-junction Solar Cells Mrs Proceedings. 1635: 55-62. DOI: 10.1557/Opl.2014.370  0.357
2014 Sin Y, Lingley Z, Lalumondiere S, Wells N, Lotshaw W, Moss SC, Kim TW, Mawst LJ, Kuech TF. Variable temperature carrier dynamics in bulk (In)GaAsNSb materials grown by MOVPE for multi-junction solar cells Proceedings of Spie - the International Society For Optical Engineering. 8981. DOI: 10.1117/12.2037385  0.404
2014 Kim TW, Kim Y, Kim K, Lee JJ, Kuech T, Mawst LJ. 1.25-eV GaAsSbN/Ge double-junction solar cell grown by metalorganic vapor phase epitaxy for high efficiency multijunction solar cell application Ieee Journal of Photovoltaics. 4: 981-985. DOI: 10.1109/Jphotov.2014.2308728  0.379
2014 Schulte K, Kuech T. Evolution of Epilayer Tilt in InGaAs Metamorphic Buffer Layers Grown by HVPE Acta Crystallographica Section a Foundations and Advances. 70: C235-C235. DOI: 10.1107/S2053273314097642  0.626
2014 Schulte KL, Zutter BT, Wood AW, Babcock SE, Kuech TF. Design and characterization of thick InxGa1-xAs metamorphic buffer layers grown by hydride vapor phase epitaxy Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/3/035013  0.637
2014 Schulte KL, Kuech TF. A model for arsenic anti-site incorporation in GaAs grown by hydride vapor phase epitaxy Journal of Applied Physics. 116: 243504. DOI: 10.1063/1.4904745  0.657
2014 Li J, Kim TH, Forghani K, Jiao W, Kong W, Collar K, Kuech TF, Brown AS. Growth of GaAs1-xBix by molecular beam epitaxy: Trade-offs in optical and structural characteristics Journal of Applied Physics. 116. DOI: 10.1063/1.4891874  0.43
2014 Zou X, Lu X, Lucas R, Kuech TF, Choi JW, Gopalan P, May Lau K. Growth and characterization of horizontal GaN wires on silicon Applied Physics Letters. 104. DOI: 10.1063/1.4886126  0.425
2014 Kim TW, Kim K, Lee JJ, Kuech TF, Mawst LJ, Wells NP, Lalumondiere SD, Sin Y, Lotshaw WT, Moss SC. Impact of thermal annealing on bulk InGaAsSbN materials grown by metalorganic vapor phase epitaxy Applied Physics Letters. 104. DOI: 10.1063/1.4864111  0.407
2014 Mawst LJ, Kirch JD, Kim T, Garrod T, Boyle C, Botez D, Zutter B, Schulte K, Kuech TF, Bouzi PM, Gmachl CF, Earles T. Low-strain, quantum-cascade-laser active regions grown on metamorphic buffer layers for emission in the 3.0-4.0 μm wavelength region Iet Optoelectronics. 8: 25-32. DOI: 10.1049/Iet-Opt.2013.0060  0.64
2014 Wood AW, Guan Y, Forghani K, Mawst LJ, Kuech TF, Babcock SE. Unexpected bismuth concentration profiles in MOVPE GaAs<inf>1-x</inf>Bi<inf>x</inf> films revealed by HAADF STEM imaging Microscopy and Microanalysis. 20: 196-197. DOI: 10.1017/S1431927614002700  0.303
2014 Kim Y, Kim K, Kim TW, Mawst LJ, Kuech TF, Kim CZ, Park WK, Lee J. InGaAsNSb/Ge double-junction solar cells grown by metalorganic chemical vapor deposition Solar Energy. 102: 126-130. DOI: 10.1016/J.Solener.2014.01.019  0.385
2014 Kim TW, Kuech TF, Mawst LJ. Impact of growth temperature and substrate orientation on dilute-nitride-antimonide materials grown by MOVPE for multi-junction solar cell application Journal of Crystal Growth. 405: 87-91. DOI: 10.1016/J.Jcrysgro.2014.07.056  0.442
2014 Forghani K, Guan Y, Wood AW, Anand A, Babcock SE, Mawst LJ, Kuech TF. Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1-yBiy Journal of Crystal Growth. 395: 38-45. DOI: 10.1016/J.Jcrysgro.2014.03.014  0.459
2014 Kim TW, Forghani K, Mawst LJ, Kuech TF, Lalumondiere SD, Sin Y, Lotshaw WT, Moss SC. Properties of 'bulk' GaAsSbN/GaAs for multi-junction solar cell application: Reduction of carbon background concentration Journal of Crystal Growth. 393: 70-74. DOI: 10.1016/J.Jcrysgro.2013.10.034  0.454
2014 Zutter BT, Schulte KL, Kim TW, Mawst LJ, Kuech TF, Foran B, Sin Y. Planarization and processing of metamorphic buffer layers grown by hydride vapor-phase epitaxy Journal of Electronic Materials. 43: 873-878. DOI: 10.1007/S11664-013-2839-X  0.658
2014 Jackson DHK, Dunn BA, Guan Y, Kuech TF. Tungsten hexacarbonyl and hydrogen peroxide as precursors for the growth of tungsten oxide thin films on titania nanoparticles Aiche Journal. 60: 1278-1286. DOI: 10.1002/Aic.14397  0.413
2014 Yao M, Rawlings JB, Schulte KL, Kuech TF. Modeling and analysis of rapid synthesis of GaAs by hydride vapor phase epitaxy process Materials Engineering and Sciences Division 2014 - Core Programming Area At the 2014 Aiche Annual Meeting. 23-41.  0.556
2013 O'Neill BJ, Jackson DH, Crisci AJ, Farberow CA, Shi F, Alba-Rubio AC, Lu J, Dietrich PJ, Gu X, Marshall CL, Stair PC, Elam JW, Miller JT, Ribeiro FH, Voyles PM, ... ... Kuech TF, et al. Stabilization of copper catalysts for liquid-phase reactions by atomic layer deposition. Angewandte Chemie (International Ed. in English). 52: 13808-12. PMID 24282166 DOI: 10.1002/Anie.201308245  0.32
2013 Huang Y, Kim TW, Xiong S, Mawst LJ, Kuech TF, Nealey PF, Dai Y, Wang Z, Guo W, Forbes D, Hubbard SM, Nesnidal M. InAs nanowires grown by metal-organic vapor-phase epitaxy (MOVPE) employing PS/PMMA diblock copolymer nanopatterning. Nano Letters. 13: 5979-84. PMID 24274630 DOI: 10.1021/Nl403163X  0.436
2013 Kuech TF, Mawst LJ, Brown AS. Mixed semiconductor alloys for optical devices. Annual Review of Chemical and Biomolecular Engineering. 4: 187-209. PMID 23540290 DOI: 10.1146/Annurev-Chembioeng-061312-103359  0.306
2013 Sin Y, Lalumondiere S, Foran B, Lotshaw W, Moss SC, Kim TW, Ruder S, Mawst LJ, Kuech TF. Carrier dynamics and defects in bulk 1eV InGaAsNSb materials and InGaAs layers with MBL grown by MOVPE for multi-junction solar cells Materials Research Society Symposium Proceedings. 1493: 245-251. DOI: 10.1557/Opl.2012.1705  0.327
2013 Sin Y, LaLumondiere S, Lotshaw W, Moss SC, Kim TW, Forghani K, Mawst LJ, Kuech TF, Tatavarti R, Wibowo A, Pan N. Carrier dynamics in bulk 1eV InGaAsNSb materials and epitaxial lift off GaAs-InAlGaP layers grown by MOVPE for multi-junction solar cells Proceedings of Spie - the International Society For Optical Engineering. 8620. DOI: 10.1117/12.2001528  0.444
2013 Chang CC, Botez D, Wan L, Nealey PF, Ruder S, Kuech TF. Fabrication of large-area, high-density Ni nanopillar arrays on GaAs substrates using diblock copolymer lithography and electrodeposition Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4798464  0.352
2013 Schulte KL, Wood AW, Reedy RC, Ptak AJ, Meyer NT, Babcock SE, Kuech TF. Heteroepitaxy of GaAs on (001)→ 6° Ge substrates at high growth rates by hydride vapor phase epitaxy Journal of Applied Physics. 113. DOI: 10.1063/1.4803037  0.676
2013 Jackson DHK, Wang D, Gallo JMR, Crisci AJ, Scott SL, Dumesic JA, Kuech TF. Amine catalyzed atomic layer deposition of (3-Mercaptopropyl) trimethoxysilane for the production of heterogeneous sulfonic acid catalysts Chemistry of Materials. 25: 3844-3851. DOI: 10.1021/Cm401607G  0.325
2013 Forghani K, Anand A, Mawst LJ, Kuech TF. Low temperature growth of GaAs1-yBiy epitaxial layers Journal of Crystal Growth. 380: 23-27. DOI: 10.1016/J.Jcrysgro.2013.05.033  0.44
2013 Yoon E, Nam OH, Kim JK, Kuech TF, Caneau C, Redwing JM, Dadgar A. 16th International Conference on Metalorganic Vapor Phase Epitaxy Journal of Crystal Growth. 370: 370. DOI: 10.1016/J.Jcrysgro.2013.03.008  0.507
2013 Schulte KL, Garrodb TJ, Kim TW, Kirch J, Ruder S, Mawst LJ, Kuech TF. Metalorganic vapor phase growth of quantum well structures on thick metamorphic buffer layers grown by hydride vapor phase epitaxy Journal of Crystal Growth. 370: 293-298. DOI: 10.1016/J.Jcrysgro.2012.08.053  0.668
2013 Mawst LJ, Kirch JD, Chang CC, Kim T, Garrod T, Botez D, Ruder S, Kuech TF, Earles T, Tatavarti R, Pan N, Wibowo A. InGaAs/AlInAs strain-compensated Superlattices grown on metamorphic buffer layers for low-strain, 3.6 μm-emitting quantum-cascade-laser active regions Journal of Crystal Growth. 370: 230-235. DOI: 10.1016/J.Jcrysgro.2012.06.053  0.394
2013 Kim TW, Garrod TJ, Mawst LJ, Kuech TF, LaLumondiere SD, Sin Y, Lotshaw WT, Moss SC. Characteristics of bulk InGaAsSbN/GaAs grown by metalorganic vapor phase epitaxy (MOVPE) Journal of Crystal Growth. 370: 163-167. DOI: 10.1016/J.Jcrysgro.2012.06.043  0.435
2013 O'Neill BJ, Jackson DHK, Crisci AJ, Farberow CA, Shi F, Alba-Rubio AC, Lu J, Dietrich PJ, Gu X, Marshall CL, Stair PC, Elam JW, Miller JT, Ribeiro FH, Voyles PM, ... ... Kuech TF, et al. Back Cover: Stabilization of Copper Catalysts for Liquid-Phase Reactions by Atomic Layer Deposition (Angew. Chem. Int. Ed. 51/2013) Angewandte Chemie International Edition. 52: 13824-13824. DOI: 10.1002/Anie.201309934  0.301
2012 Cho E, Brown A, Kuech TF. Chemical characterization of DNA-immobilized InAs surfaces using X-ray photoelectron spectroscopy and near-edge X-ray absorption fine structure. Langmuir : the Acs Journal of Surfaces and Colloids. 28: 11890-8. PMID 22809291 DOI: 10.1021/La302313V  0.571
2012 Kim TW, Garrod TJ, Kim K, Lee J, Mawst LJ, Kuech TF, LaLumondiere SD, Sin Y, Lotshaw WT, Moss SC. Characteristics of bulk InGaAsN and InGaAsSbN materials grown by metal organic vapor phase epitaxy (MOVPE) for solar cell application Proceedings of Spie - the International Society For Optical Engineering. 8256. DOI: 10.1117/12.906961  0.373
2012 Sin Y, LaLumondiere SD, Foran BJ, Lotshaw WT, Moss SC, Kim TW, Dudley P, Kirch J, Ruder S, Mawst LJ, Kuech TF. Carrier dynamics and defects in MOVPE-grown bulk InGaAs layers with metamorphic InGaAs and InGaPSb buffer layers for solar cells Proceedings of Spie - the International Society For Optical Engineering. 8255. DOI: 10.1117/12.906424  0.406
2012 Wiedmann MK, Jackson DHK, Pagan-Torres YJ, Cho E, Dumesic JA, Kuech TF. Atomic layer deposition of titanium phosphate on silica nanoparticles Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3664097  0.552
2012 Jacobsen H, Puchala B, Kuech TF, Morgan D. Ab initio study of the strain dependent thermodynamics of Bi doping in GaAs Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.085207  0.43
2012 Kim TW, Garrod TJ, Kim K, Lee JJ, Lalumondiere SD, Sin Y, Lotshaw WT, Moss SC, Kuech TF, Tatavarti R, Mawst LJ. Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy Applied Physics Letters. 100. DOI: 10.1063/1.3693160  0.405
2012 Cho E, Yitamben EN, Iski EV, Guisinger NP, Kuech TF. Atomic-scale investigation of highly stable Pt clusters synthesized on a graphene support for catalytic applications Journal of Physical Chemistry C. 116: 26066-26071. DOI: 10.1021/Jp309538D  0.528
2012 Dedigama A, Angelo M, Torrione P, Kim TH, Wolter S, Lampert W, Atewologun A, Edirisoorya M, Collins L, Kuech TF, Losurdo M, Bruno G, Brown A. Hemin-functionalized InAs-based high sensitivity room temperature NO gas sensors Journal of Physical Chemistry C. 116: 826-833. DOI: 10.1021/Jp2086889  0.381
2012 Paulson CA, Jha S, Song X, Rathi M, Babcock SE, Mawst L, Kuech TF. The effect of helium ion implantation on the relaxation of strained InGaAs thin films Thin Solid Films. 520: 2147-2154. DOI: 10.1016/J.Tsf.2011.09.028  0.632
2012 Schulte KL, Rance WL, Reedy RC, Ptak AJ, Young DL, Kuech TF. Controlled formation of GaAs pn junctions during hydride vapor phase epitaxy of GaAs Journal of Crystal Growth. 352: 253-257. DOI: 10.1016/J.Jcrysgro.2011.11.013  0.648
2011 Cho E, Wu P, Ahmed M, Brown A, Kuech TF. Characterization of immobilized DNA on sulfur-passivated InAs surfaces Mrs Proceedings. 1301. DOI: 10.1557/Opl.2011.75  0.573
2011 Chen W, Kuech TF, Lau SS. Ion-cut transfer of InP-based high electron mobility transistors Journal of the Electrochemical Society. 158. DOI: 10.1149/1.3591110  0.321
2011 Mawst LJ, Parka JH, Huang Y, Kirch J, Sinc Y, Foranc B, Liu CC, Nealey PF, Kuech TF. Nanopatterned quantum dot active region lasers on InP substrates Proceedings of Spie - the International Society For Optical Engineering. 7953. DOI: 10.1117/12.875199  0.399
2011 Chen W, Alford TL, Kuech TF, Lau SS. High electron mobility transistors on plastic flexible substrates Applied Physics Letters. 98. DOI: 10.1063/1.3593006  0.389
2011 Kirch J, Kim TW, Konen J, Mawst LJ, Kuech TF, Kuan TS. Effects of antimony (Sb) incorporation on MOVPE grown InAs yP1-y metamorphic buffer layers on InP substrates Journal of Crystal Growth. 315: 96-101. DOI: 10.1016/J.Jcrysgro.2010.09.054  0.4
2011 Garrod TJ, Kirch J, Dudley P, Kim S, Mawst LJ, Kuech TF. Narrow band gap GaInNAsSb material grown by metal organic vapor phase epitaxy (MOVPE) for solar cell applications Journal of Crystal Growth. 315: 68-73. DOI: 10.1016/J.Jcrysgro.2010.08.010  0.437
2011 Jha S, Wiedmann MK, Kuan TS, Song X, Babcock SE, Kuech TF. Growth behavior and defect reduction in heteroepitaxial InAs and GaSb on GaAs using block copolymer lithography Journal of Crystal Growth. 315: 91-95. DOI: 10.1016/J.Jcrysgro.2010.07.050  0.448
2011 Jha S, Wiedmann MK, Kuech TF. A comparative precursor study of the growth behavior of InSb using metal-organic vapor phase epitaxy Journal of Crystal Growth. 315: 87-90. DOI: 10.1016/J.Jcrysgro.2010.07.047  0.393
2010 Chen W, Chen WV, Lee K, Lau SS, Kuech TF. High quality InP layers transferred by cleavage plane assisted ion-cutting Electrochemical and Solid-State Letters. 13: H268-H270. DOI: 10.1149/1.3428748  0.317
2010 Shintri S, Rao S, Li H, Bhat I, Jha S, Liu C, Kuech T, Palosz W, Trivedi S, Semendy F, Wijewarnasuriya P, Chen Y. Dislocation reduction in CdTe epilayers grown on silicon substrates using buffered nanostructures Proceedings of Spie. 7768. DOI: 10.1117/12.861735  0.45
2010 Gunawan AA, Jha S, Kuech TF. Growth of size and density controlled GaAs/Inx Ga 1-xAs/GaAs (x=0.10) nanowires on anodic alumina membrane-assisted etching of nanopatterned GaAs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 1111-1119. DOI: 10.1116/1.3498753  0.473
2010 Kuech TF, Mawst LJ. Nanofabrication of III-V semiconductors employing diblock copolymer lithography Journal of Physics D: Applied Physics. 43. DOI: 10.1088/0022-3727/43/18/183001  0.427
2010 Kirch J, Garrod T, Kim S, Park JH, Shin JC, Mawst LJ, Kuech TF, Song X, Babcock SE, Vurgaftman I, Meyer JR, Kuan TS. InAs yP 1-y metamorphic buffer layers on InP substrates for mid-IR diode lasers Journal of Crystal Growth. 312: 1165-1169. DOI: 10.1016/J.Jcrysgro.2009.12.057  0.381
2009 Palit S, Kirch J, Tsvid G, Mawst L, Kuech T, Jokerst NM. Low-threshold thin-film III-V lasers bonded to silicon with front and back side defined features. Optics Letters. 34: 2802-4. PMID 19756110 DOI: 10.1364/Ol.34.002802  0.339
2009 Chen W, Bandaru P, Tang CW, Lau KM, Kuech TF, Lau SS. InP Layer Transfer with Masked Implantation Electrochemical and Solid-State Letters. 12: H149. DOI: 10.1149/1.3078487  0.304
2009 Botez D, Tsvid G, D'Souza M, Rathi MK, Shin JC, Kirch J, Mawst LJ, Kuech TF, Vurgaftman I, Meyer J, Plant J, Turner G. Progress towards intersubband quantum-box lasers for highly efficient continuous wave operation in the mid-infrared Journal of Nanophotonics. 3. DOI: 10.1117/1.3085992  0.602
2009 Park JH, Liu CC, Rathi MK, Mawst LJ, Nealey PF, Kuech TF. Nanoscale selective growth and optical characteristics of quantum dots on III-V substrates prepared by diblock copolymer nanopatterning Journal of Nanophotonics. 3. DOI: 10.1117/1.3085990  0.621
2009 Uhlrich JJ, Olson DC, Hsu JWP, Kuech TF. Surface chemistry and surface electronic properties of ZnO single crystals and nanorods Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 328-335. DOI: 10.1116/1.3085723  0.764
2009 Huang JYT, Mawst LJ, Kuech TF, Song X, Babcock SE, Kim CS, Vurgaftman I, Meyer JR, Holmes AL. Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/2/025108  0.366
2009 Rathi MK, Khandekar AA, Song X, Babcock SE, Mawst LJ, Kuech TF. High antimony content GaAs1-z Nz - GaAs1-y Sby type-II "w" structure for long wavelength emission Journal of Applied Physics. 106. DOI: 10.1063/1.3226000  0.794
2009 Park JH, Kirch J, Mawst LJ, Liu CC, Nealey PF, Kuech TF. Controlled growth of InGaAs/InGaAsP quantum dots on InP substrates employing diblock copolymer lithography Applied Physics Letters. 95. DOI: 10.1063/1.3224916  0.39
2009 Jha S, Liu CC, Kuan TS, Babcock SE, Nealey PF, Park JH, Mawst LJ, Kuech TF. Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography Applied Physics Letters. 95. DOI: 10.1063/1.3204013  0.449
2009 Park BN, Uhlrich JJ, Kuech TF, Evans PG. Electrical properties of GaN/poly(3-hexylthiophene) interfaces Journal of Applied Physics. 106. DOI: 10.1063/1.3159653  0.762
2009 Chen P, Chen WV, Yu PKL, Tang CW, Lau KM, Mawst L, Paulson C, Kuech TF, Lau SS. Effects of hydrogen implantation damage on the performance of InP/InGaAs/InP p-i-n photodiodes transferred on silicon Applied Physics Letters. 94. DOI: 10.1063/1.3062848  0.324
2009 Uhlrich JJ, Franking R, Hamers RJ, Kuech TF. Sulfide treatment of ZnO single crystals and nanorods and the effect on P3HT-ZnO photovoltaic device properties Journal of Physical Chemistry C. 113: 21147-21154. DOI: 10.1021/Jp906566V  0.755
2009 Grabow LC, Uhlrich JJ, Kuech TF, Mavrikakis M. Effectiveness of in situ NH3 annealing treatments for the removal of oxygen from GaN surfaces Surface Science. 603: 387-399. DOI: 10.1016/J.Susc.2008.11.029  0.748
2009 Rathi MK, Tsvid G, Khandekar AA, Shin JC, Botez D, Kuech TF. Passivation of interfacial states for GaAs- and InGaAs/inp-based regrown nanostructures Journal of Electronic Materials. 38: 2023-2032. DOI: 10.1007/S11664-009-0887-Z  0.783
2008 Su N, Tang Y, Zhang Z, Kuech TF, Fay P. Observation and control of electrochemical etching effects in the fabrication of InAs/AlSb/GaSb heterostructure devices Journal of Vacuum Science & Technology B. 26: 1025-1029. DOI: 10.1116/1.2924328  0.359
2008 Mawst LJ, Huang JYT, Xu DP, Yeh JY, Tsvid G, Kuech TF, Tansu N. MOCVD-grown dilute nitride type II quantum wells Ieee Journal On Selected Topics in Quantum Electronics. 14: 979-991. DOI: 10.1109/Jstqe.2008.918105  0.396
2008 Chen W, Chen P, Pulsifer JE, Alford TL, Kuech TF, Lau SS. Integration of thin layers of single-crystalline InP with flexible substrates Applied Physics Letters. 92. DOI: 10.1063/1.2937409  0.348
2008 Chen P, Jing Y, Lau SS, Xu D, Mawst L, Alford TL, Paulson C, Kuech TF. High crystalline-quality III-V layer transfer onto Si substrate Applied Physics Letters. 92. DOI: 10.1063/1.2890494  0.383
2008 Kim H, Colavita PE, Paoprasert P, Gopalan P, Kuech TF, Hamers RJ. Grafting of molecular layers to oxidized gallium nitride surfaces via phosphonic acid linkages Surface Science. 602: 2382-2388. DOI: 10.1016/J.Susc.2008.05.002  0.307
2008 Kuech TF, Khandekar AA, Rathi M, Mawst LJ, Huang JYT, Song X, Babcock SE, Meyer JR, Vurgaftman I. MOVPE growth of antimonide-containing alloy materials for long wavelength applications Journal of Crystal Growth. 310: 4826-4830. DOI: 10.1016/J.Jcrysgro.2008.09.006  0.817
2008 Huang JYT, Mawst LJ, Jha S, Kuech TF, Wang D, Shterengas L, Belenky G, Meyer JR, Vurgaftman I. MOVPE growth of Ga(As)SbN on GaSb substrates Journal of Crystal Growth. 310: 4839-4842. DOI: 10.1016/J.Jcrysgro.2008.08.026  0.417
2008 Jha S, Song X, Babcock SE, Kuech TF, Wheeler D, Wu B, Fay P, Seabaugh A. Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy Journal of Crystal Growth. 310: 4772-4775. DOI: 10.1016/J.Jcrysgro.2008.07.048  0.48
2008 Huang JYT, Xu DP, Song X, Babcock SE, Kuech TF, Mawst LJ. Growth of strained GaAs1-ySby and GaAs1-y-zSbyNz quantum wells on InP substrates Journal of Crystal Growth. 310: 2382-2389. DOI: 10.1016/J.Jcrysgro.2007.11.207  0.405
2008 Song X, Babcock SE, Paulson CA, Kuech TF, Huang JYT, Xu DP, Park J, Mawst LJ. Nanostructure of GaAs0.88Sb0.10N0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InP Journal of Crystal Growth. 310: 2377-2381. DOI: 10.1016/J.Jcrysgro.2007.11.018  0.396
2008 Uhlrich JJ, Grabow LC, Mavrikakis M, Kuech TF. Practical surface treatments and surface chemistry of n-type and p-type GaN Journal of Electronic Materials. 37: 439-447. DOI: 10.1007/S11664-007-0348-5  0.762
2008 Zhang JL, Kuech TF. Fabrication and properties of an asymmetric waveguide containing nanoparticles Journal of Electronic Materials. 37: 135-144. DOI: 10.1007/S11664-007-0324-0  0.315
2008 Kortunova EV, Nikolaeva NG, Chvanski PP, Maltsev VV, Volkova EA, Koporulina EV, Leonyuk NI, Kuech TF. Hydrothermal synthesis of improved ZnO crystals for epitaxial growth of GaN thin films Journal of Materials Science. 43: 2336-2341. DOI: 10.1007/S10853-007-2036-5  0.366
2008 Uhlrich JJ, Kuech TF. A photoelectron spectroscopy study of sulfide-treated ZnO nanorods and single crystals Materials Research Society Symposium Proceedings. 1114: 49-54.  0.746
2007 Park JH, Khandekar A, Park S, Mawst L, Kuech T, Nealey P. Selective GaAs Quantum Dot Array Growth using Dielectric and AlGaAs Masks Pattern-Transferred from Diblock Copolymer Mrs Proceedings. 1014. DOI: 10.1557/Proc-1014-Aa07-15  0.73
2007 Xu D, Huang JY, Park JH, Mawst LJ, Kuech TF, SONG X, Babcock SE. Characteristics of Strained GaAsSb(N)/InP Quantum Wells Grown by Metalorganic Chemical Vapor Deposition on InP Substrates Mrs Proceedings. 994. DOI: 10.1557/Proc-0994-F11-01  0.43
2007 Huang JYT, Xu DP, Mawst LJ, Kuech TF, Vurgaftman I, Meyer JR. GaAsSbN-GaAsSb-InP type-II "W" quantum wells for mid-IR emission Ieee Journal On Selected Topics in Quantum Electronics. 13: 1065-1073. DOI: 10.1109/Jstqe.2007.902831  0.35
2007 Huang JYT, Xu DP, Park JH, Mawst LJ, Kuech TF, Song X, Babcock SE, Vurgaftman I, Meyer JR. Characteristics of strained GaAs1-ySby (0.16 ≤ y ≤ 0.69) quantum wells on InP substrates Journal of Physics D: Applied Physics. 40: 7656-7661. DOI: 10.1088/0022-3727/40/24/010  0.378
2007 Xu DP, Huang JYT, Park J, Mawst LJ, Kuech TF, Song X, Babcock SE. Annealing of dilute-nitride GaAsSbN∕InP strained multiple quantum wells Applied Physics Letters. 91: 191909. DOI: 10.1063/1.2805637  0.387
2007 Slotte J, Gonzalez-Debs M, Kuech TF, Cederberg JG. Influence of substrate doping and point defects on Al and Ga interdiffusion in AlSb/GaSb superlattice structures Journal of Applied Physics. 102. DOI: 10.1063/1.2743883  0.682
2007 Xu DP, Huang JYT, Park JH, Mawst LJ, Kuech TF, Vurgaftman I, Meyer JR. Characteristics of dilute-nitride GaAsSbNInP strained multiple quantum wells Applied Physics Letters. 90. DOI: 10.1063/1.2731730  0.419
2007 Chen W, Chen P, Jing Y, Lau SS, Kuech TF, Liu J, Wang X, Chu W. Double-flip transfer of indium phosphide layers via adhesive wafer bonding and ion-cutting process Applied Physics Letters. 90: 52114. DOI: 10.1063/1.2450665  0.314
2007 Allen CG, Dorr JC, Khandekar AA, Beach JD, Schick IC, Schick EJ, Collins RT, Kuech TF. Microcontact printing of indium metal using salt solution "ink", Thin Solid Films. 515: 6812-6816. DOI: 10.1016/J.Tsf.2007.02.070  0.729
2007 Gokhale AA, Kuech TF, Mavrikakis M. A theoretical comparative study of the surfactant effect of Sb and Bi on GaN growth Journal of Crystal Growth. 303: 493-499. DOI: 10.1016/J.Jcrysgro.2007.01.012  0.377
2007 Khandekar AA, Yeh JY, Mawst LJ, Song X, Babcock SE, Kuech TF. Effects of Ga- and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs1-ySby films grown via metalorganic vapor phase epitaxy Journal of Crystal Growth. 303: 456-465. DOI: 10.1016/J.Jcrysgro.2006.12.034  0.749
2007 Uhlrich J, Garcia M, Wolter S, Brown A, Kuech T. Interfacial chemistry and energy band line-up of pentacene with the GaN (0001) surface Journal of Crystal Growth. 300: 204-211. DOI: 10.1016/J.Jcrysgro.2006.11.035  0.769
2007 Clayton AJ, Khandekar AA, Kuech TF, Mason NJ, Robinson MF, Watkins S, Guo Y. Growth of AlN by vectored flow epitaxy Journal of Crystal Growth. 298: 328-331. DOI: 10.1016/J.Jcrysgro.2006.10.130  0.724
2007 Khandekar AA, Yeh JY, Mawst LJ, Song X, Babcock SE, Kuech TF. Growth of strained GaAs1-ySby layers using metalorganic vapor phase epitaxy Journal of Crystal Growth. 298: 154-158. DOI: 10.1016/J.Jcrysgro.2006.10.012  0.739
2007 Grabow LC, Uhlrich JJ, Kuech TF, Mavrikakis M. Towards a functional organic-inorganic semiconductor interface 2007 Aiche Annual Meeting.  0.695
2007 Suryanarayanan G, Khandekar AA, Kuech TF, Babcock SE. Development of lateral epitaxial overgrown InAs microstructure on patterned (100) GaAs substrates Journal of Optoelectronics and Advanced Materials. 9: 1242-1245.  0.726
2006 Kim H, Colavita PE, Metz KM, Nichols BM, Sun B, Uhlrich J, Wang X, Kuech TF, Hamers RJ. Photochemical functionalization of gallium nitride thin films with molecular and biomolecular layers. Langmuir : the Acs Journal of Surfaces and Colloids. 22: 8121-6. PMID 16952251 DOI: 10.1021/La0610708  0.748
2006 Kim NH, Park JH, Mawst LJ, Kuech TF, Kanskar M. Temperature sensitivity of InGaAs quantum-dot lasers grown by MOCVD Ieee Photonics Technology Letters. 18: 989-991. DOI: 10.1109/Lpt.2006.872283  0.319
2006 Yeh JY, Mawst LJ, Khandekar AA, Kuech TF, Vurgaftman I, Meyer JR, Tansu N. Long wavelength emission of InGaAsNGaAsSb type II "w" quantum wells Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2171486  0.725
2006 Park JH, Khandekar AA, Park SM, Mawst LJ, Kuech TF, Nealey PF. Selective MOCVD growth of single-crystal dense GaAs quantum dot array using cylinder-forming diblock copolymers Journal of Crystal Growth. 297: 283-288. DOI: 10.1016/J.Jcrysgro.2006.09.049  0.731
2006 Rathi MK, Hawkins BE, Kuech TF. Growth behavior of GaSb by metal-organic vapor-phase epitaxy Journal of Crystal Growth. 296: 117-128. DOI: 10.1016/J.Jcrysgro.2006.08.025  0.655
2006 Khandekar AA, Suryanarayanan G, Babcock SE, Kuech TF. The evolution of the microstructure and morphology of metal-organic vapor-phase epitaxy-grown InAs films on (1 0 0) GaAs Journal of Crystal Growth. 292: 40-52. DOI: 10.1016/J.Jcrysgro.2006.04.086  0.768
2006 Yeh JY, Mawst LJ, Khandekar AA, Kuech TF, Vurgaftman I, Meyer JR, Tansu N. Characteristics of InGaAsN-GaAsSb type-II "W" quantum wells Journal of Crystal Growth. 287: 615-619. DOI: 10.1016/J.Jcrysgro.2005.10.087  0.739
2005 Khandekar AA, Hawkins BE, Kuech TF, Yeh JY, Mawst LJ, Meyer JR, Vurgaftman I, Tansu N. Characteristics of GaAsNGaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates Journal of Applied Physics. 98. DOI: 10.1063/1.2148620  0.758
2005 Gonzalez-Debs M, Cederberg JG, Biefeld RM, Kuech TF. Photoluminescence studies on Al and Ga interdiffusion across (Al,Ga)Sb/ GaSb quantum well interfaces Journal of Applied Physics. 97. DOI: 10.1063/1.1900286  0.607
2005 Kim NH, Ramamurthy P, Mawst LJ, Kuech TF, Modak P, Goodnough TJ, Forbes DV, Kanskar M. Characteristics of InGaAs quantum dots grown on tensile-strained GaAs 1-xP x Journal of Applied Physics. 97. DOI: 10.1063/1.1884249  0.421
2005 Gokhale AA, Kuech TF, Mavrikakis M. Surfactant effect of Sb on GaN growth Journal of Crystal Growth. 285: 146-155. DOI: 10.1016/J.Jcrysgro.2005.08.021  0.391
2005 Khandekar AA, Suryanarayanan G, Babcock SE, Kuech TF. InAs growth and development of defect microstructure on GaAs Journal of Crystal Growth. 275. DOI: 10.1016/J.Jcrysgro.2004.11.133  0.759
2005 Liu N, Kuech TF. Changes in interfacial bonding energies in the chemical activation of GaAs surfaces Journal of Electronic Materials. 34: 1010-1015. DOI: 10.1007/S11664-005-0088-3  0.325
2005 Uhlrich JJ, Kuech TF. Interface formation and energy level alignment of pentacene on gan Aiche Annual Meeting, Conference Proceedings. 4914.  0.775
2004 Tsvid G, D'Souza M, Botez D, Hawkins B, Khandekar A, Kuech T, Zory P. Towards intersubband quantum box lasers: Electron-beam lithography update Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 3214-3216. DOI: 10.1116/1.1824055  0.719
2004 Wu J, Walukiewicz W, Yu KM, Denlinger JD, Shan W, Ager JW, Kimura A, Tang HF, Kuech TF. Valence band hybridization inN-richGaN1−xAsxalloys Physical Review B. 70. DOI: 10.1103/Physrevb.70.115214  0.329
2004 Liu ZY, Saulys DA, Kuech TF. Improved characteristics for Au/n-GaSb Schottky contacts through the use of a nonaqueous sulfide-based passivation Applied Physics Letters. 85: 4391-4393. DOI: 10.1063/1.1815073  0.34
2004 Liu ZY, Gokhale AA, Mavrikakis M, Saulys DA, Kuech TF. Modifications of the electronic structure of GaSb surface by chalcogen atoms: S, Se, and Te Journal of Applied Physics. 96: 4302-4307. DOI: 10.1063/1.1790572  0.379
2004 Beach JD, Veauvy C, Caputo R, Collins RT, Khandekar AA, Kuech TF, Inoki CK, Kuan TS, Hollingsworth RE. Formation of regular arrays of submicron GaAs dots on silicon Applied Physics Letters. 84: 5323-5325. DOI: 10.1063/1.1766391  0.755
2004 Kimura A, Paulson CA, Tang HF, Kuech TF. Epitaxial GaN 1-yAs y layers with high As content grown by metalorganic vapor phase epitaxy and their band gap energy Applied Physics Letters. 84: 1489-1491. DOI: 10.1063/1.1652232  0.407
2004 Kimura A, Liu Z, Kuech TF. Antimony as a surfactant during the growth of GaN-based GaNAs alloys by metal organic vapor-phase epitaxy Journal of Crystal Growth. 272: 432-437. DOI: 10.1016/J.Jcrysgro.2004.08.061  0.599
2004 Hawkins BE, Khandekar AA, Yeh JY, Mawst LJ, Kuech TF. Effects of Gas switching sequences on GaAs/GaAs1-ySby super-lattices Journal of Crystal Growth. 272: 686-693. DOI: 10.1016/J.Jcrysgro.2004.08.045  0.746
2004 Kimura A, Tang HF, Kuech TF. Growth of GaNAs alloys on the N-rich side with high As content by metalorganic vapor phase epitaxy Journal of Crystal Growth. 265: 71-77. DOI: 10.1016/J.Jcrysgro.2004.01.045  0.414
2003 Kimura A, Tang HF, Paulson CA, Kuech TF. N-rich GaNAs with high as content grown by metalorganic vapor phase epitaxy Materials Research Society Symposium - Proceedings. 798: 329-334. DOI: 10.1557/Proc-798-Y12.10  0.431
2003 Liu ZY, Kuech TF, Saulys DA. Study of Non-Aqueous Passivation on GaSb (100) Surfaces Materials Research Society Symposium - Proceedings. 763: 67-72. DOI: 10.1557/Proc-763-B2.3  0.328
2003 Kim JK, Jang HW, Kim CC, Je JH, Rickert KA, Kuech TF, Lee JL. Microstructural study of Pt contact on p-type GaN Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 87-90. DOI: 10.1116/1.1532733  0.38
2003 Rehder EM, Inoki CK, Kuan TS, Kuech TF. SiGe relaxation on silicon-on-insulator substrates: An experimental and modeling study Journal of Applied Physics. 94: 7892-7903. DOI: 10.1063/1.1628406  0.802
2003 Dwikusuma F, Kuech TF. X-ray photoelectron spectroscopic study on sapphire nitridation for GaN growth by hydride vapor phase epitaxy: Nitridation mechanism Journal of Applied Physics. 94: 5656-5664. DOI: 10.1063/1.1618357  0.811
2003 Suryanarayanan G, Khandekar AA, Kuech TF, Babcock SE. Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates Applied Physics Letters. 83: 1977-1979. DOI: 10.1063/1.1609231  0.744
2003 Rickert KA, Ellis AB, Himpsel FJ, Lu H, Schaff W, Redwing JM, Dwikusuma F, Kuech TF. X-ray photoemission spectroscopic investigation of surface treatments, metal deposition, and electron accumulation on InN Applied Physics Letters. 82: 3254-3256. DOI: 10.1063/1.1573351  0.798
2003 Wang F, Zhang R, Xiu X, Chen K, Gu S, Shen B, Zheng Y, Kuech T. Investigation of dislocations and defects in epitaxial lateral overgrown GaN by photoelectrochemical wet etching Materials Letters. 57: 1365-1368. DOI: 10.1016/S0167-577X(02)00988-6  0.375
2003 Dwikusuma F, Mayer J, Kuech TF. Nucleation and initial growth kinetics of GaN on sapphire substrate by hydride vapor phase epitaxy Journal of Crystal Growth. 258: 65-74. DOI: 10.1016/S0022-0248(03)01506-9  0.822
2003 Joshkin V, Dovidenko K, Oktyabrsky S, Saulys D, Kuech T, McCaughan L. New methods for fabricating patterned lithium niobate for photonic applications Journal of Crystal Growth. 259: 273-278. DOI: 10.1016/J.Jcrysgro.2003.08.001  0.381
2003 Hsu JWP, Schrey FF, Matthews MJ, Gu SL, Kuech TF. Impurity effects on photoluminescence in lateral epitaxially overgrown GaN Journal of Electronic Materials. 32: 322-326. DOI: 10.1007/S11664-003-0152-9  0.401
2003 Dwikusuma F, Kuech TF. The Effects of Sapphire Surface Treatments and Nitridation on GaN Nucleation Grown using Hydride Vapor Phase Epitaxy Materials Research Society Symposium - Proceedings. 764: 57-62.  0.823
2002 Suryanarayanan G, Khandekar AA, Hawkins BE, Kuech TF, Babcock SE. Lateral Epitaxial Overgrowth of InAs on (100) GaAs Substrates Mrs Proceedings. 744. DOI: 10.1557/Proc-744-M1.4  0.745
2002 Dwikusuma F, Saulys D, Kuech TF. Study on chemical treatment and high temperature nitridation of sapphire for III-nitride heteroepitaxial growth Materials Research Society Symposium - Proceedings. 743: 67-72. DOI: 10.1557/Proc-743-L3.4  0.815
2002 Feng Z, Lovell EG, Engelstad RL, Moran PD, Kuech TF. Stress generation and relaxation during film heteroepitaxy on a compliant substrate with a viscoelastic glass interlayer Materials Research Society Symposium - Proceedings. 696: 81-86. DOI: 10.1557/Proc-696-N3.19  0.326
2002 Feng Z, Lovell EG, Engelstad RL, Kuech TF. Effects of surface constraints on stresses in heteroepitaxial films grown on compliant substrates Materials Research Society Symposium - Proceedings. 695: 65-70. DOI: 10.1557/Proc-695-L2.10.1  0.325
2002 Rickert KA, Kim JK, Lee JL, Himpsel FJ, Ellis AB, Kuech TF. X-ray photoemission determination of the surface fermi level motion and pinning on n- and p-GaN during the formation of Au, Ni, and Ti metal contacts Materials Research Society Symposium - Proceedings. 693: 843-848. DOI: 10.1557/Proc-693-I13.4.1  0.335
2002 Dwikusuma F, Saulys D, Kuech TF. Study on sapphire surface preparation for III-nitride heteroepitaxial growth by chemical treatments Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1509072  0.809
2002 Rickert KA, Ellis AB, Kim JK, Lee JL, Himpsel FJ, Dwikusuma F, Kuech TF. X-ray photoemission determination of the Schottky barrier height of metal contacts to n-GaN and p-GaN Journal of Applied Physics. 92: 6671-6678. DOI: 10.1063/1.1518129  0.793
2002 Zhang L, Tang HF, Schieke J, Mavrikakis M, Kuech TF. The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy Journal of Applied Physics. 92: 2304-2309. DOI: 10.1063/1.1495891  0.457
2002 Wang F, Zhang R, Tan WS, Xiu XQ, Lu DQ, Gu SL, Shen B, Shi Y, Wu XS, Zheng YD, Jiang SS, Kuech TF. Influences of mask width, fill factor, HCl addition and C doping on wing tilts in the epitaxial laterally overgrown GaN films by hydride vapor phase epitaxy Applied Physics Letters. 80: 4765-4767. DOI: 10.1063/1.1489099  0.459
2002 Feng Z, Lovell E, Engelstad R, Kuech T, Babcock S. Stress-based prediction of dislocation generation in GaN during lateral epitaxial overgrowth Applied Physics Letters. 80: 1547-1549. DOI: 10.1063/1.1454210  0.347
2002 Paulson CA, Ellis AB, Moran PD, Kuech TF. Near-field scanning optical microscopy investigation of immiscibility effects in In1-xGaxP films grown by liquid phase epitaxy Journal of Applied Physics. 91: 2785-2790. DOI: 10.1063/1.1433184  0.348
2002 Rickert KA, Ellis AB, Himpsel FJ, Sun J, Kuech TF. N-GaN surface treatments for metal contacts studied via x-ray photoemission spectroscopy Applied Physics Letters. 80: 204-206. DOI: 10.1063/1.1430024  0.551
2002 Zhang L, Tang H, Schieke J, Mavrikakis M, Kuech T. Influence of Bi impurity as a surfactant during the growth of GaN by metalorganic vapor phase epitaxy Journal of Crystal Growth. 242: 302-308. DOI: 10.1016/S0022-0248(02)01419-7  0.46
2002 Zhang L, Gu S, Zhang R, Hansen D, Boleslawski M, Kuech T. Lateral epitaxial overgrowth of GaN using diethyl gallium chloride in metal organic vapor phase epitaxy Journal of Crystal Growth. 235: 115-123. DOI: 10.1016/S0022-0248(01)01835-8  0.422
2002 Gu S, Zhang R, Shi Y, Zheng Y, Zhang L, Kuech TF. Hydride vapor phase epitaxy growth of GaN on sapphire with ZnO buffer layers Applied Physics A. 74: 537-540. DOI: 10.1007/S003390100933  0.425
2001 Woll AR, Moran P, Rehder EM, Yang B, Kuech TF, Lagally MG. Strain Relaxation in SiGe Thin Films Studied by Low-Energy Electron Microscopy Mrs Proceedings. 696. DOI: 10.1557/Proc-696-N4.2  0.769
2001 Hansen DM, Albaugh CE, Moran PD, Kuech TF. Plasma induced chemical changes at silica surfaces during pre-bonding treatments Materials Research Society Symposium Proceedings. 681: 24-29. DOI: 10.1557/Proc-681-I2.2  0.348
2001 Rehder EM, Kuan TS, Kuech TF. Mechanism for the reduction of threading dislocation densities in Si0.82Ge0.18 films on silicon on insulator substrates Materials Research Society Symposium - Proceedings. 673. DOI: 10.1557/Proc-673-P5.3  0.806
2001 Paulson CA, Ellis AB, Kuech TF. Near-field scanning optical microscopy and electron microprobe microscopy investigations of immiscibility effects in indium gallium phosphide grown by liquid phase epitaxy Materials Research Society Symposium - Proceedings. 667: G271-G276. DOI: 10.1557/Proc-667-G2.7  0.327
2001 Hansen DM, Albaugh CE, Moran PD, Kuech TF. Chemical role of oxygen plasma in wafer bonding using borosilicate glasses Applied Physics Letters. 79: 3413-3415. DOI: 10.1063/1.1418454  0.354
2001 Hansen DM, Albaugh CE, Moran PD, Kuech TF. Chemical investigations of GaAs wafer bonded interfaces Journal of Applied Physics. 90: 5991-5999. DOI: 10.1063/1.1416139  0.342
2001 Zhang L, Tang HF, Kuech TF. Effect of Sb as a surfactant during the lateral epitaxial overgrowth of GaN by metalorganic vapor phase epitaxy Applied Physics Letters. 79: 3059-3061. DOI: 10.1063/1.1415774  0.451
2001 Matthews MJ, Hsu JWP, Gu S, Kuech TF. Carrier density imaging of lateral epitaxially overgrown GaN using scanning confocal Raman microscopy Applied Physics Letters. 79: 3086-3088. DOI: 10.1063/1.1415421  0.377
2001 Hsu JWP, Matthews MJ, Abusch-Magder D, Kleiman RN, Lang DV, Richter S, Gu SL, Kuech TF. Spatial variation of electrical properties in lateral epitaxially overgrown GaN Applied Physics Letters. 79: 761-763. DOI: 10.1063/1.1388877  0.372
2001 Moran PD, Chow D, Hunter A, Kuech TF. Fabrication of InAs/AlSb/GaSb heterojunction bipolar transistors on Al2O3 substrates by wafer bonding Applied Physics Letters. 78: 2232-2234. DOI: 10.1063/1.1359140  0.356
2001 Yi SS, Moran PD, Zhang X, Cerrina F, Carter J, Smith HI, Kuech TF. Oriented crystallization of GaSb on a patterned, amorphous Si substrate Applied Physics Letters. 78: 1358-1360. DOI: 10.1063/1.1352657  0.382
2001 Gu S, Zhang R, Shi Y, Zheng Y, Zhang L, Dwikusuma F, Kuech TF. The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy Journal of Crystal Growth. 231: 342-351. DOI: 10.1016/S0022-0248(01)01464-6  0.82
2001 Moran PD, Kuech TF. Kinetics of strain relaxation in semiconductor films grown on borosilicate glass-bonded substrates Journal of Electronic Materials. 30: 802-806. DOI: 10.1007/S11664-001-0060-9  0.351
2000 Seker F, Meeker K, Kuech TF, Ellis AB. Surface Chemistry of Prototypical Bulk II-VI and III-V Semiconductors and Implications for Chemical Sensing. Chemical Reviews. 100: 2505-36. PMID 11749294 DOI: 10.1021/Cr980093R  0.302
2000 Gu S, Zhang R, Sun J, Zhang L, Kuech TF. The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GAN Mrs Internet Journal of Nitride Semiconductor Research. 5: 138-144. DOI: 10.1557/S1092578300004191  0.599
2000 Zhang R, Shi Y, Zhou YG, Shen B, Zheng YD, Kuan TS, Gu SL, Zhang L, Hansen DM, Kuech TF. Structural properties of laterally overgrown GaN Mrs Internet Journal of Nitride Semiconductor Research. 5: 111-116. DOI: 10.1557/S1092578300004154  0.436
2000 Dunn KA, Babcock SE, Stone DS, Matyi RJ, Zhang L, Kuech TF. Dislocation arrangement in a thick LEO GaN film on sapphire Materials Research Society Symposium - Proceedings. 595. DOI: 10.1557/S1092578300004130  0.377
2000 Kuan TS, Inoki CK, Hsu Y, Harris DL, Zhang R, Gu S, Kuech TF. Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 5: 83-89. DOI: 10.1557/S1092578300004117  0.396
2000 Zhang L, Gu SL, Kuech TF, Boleslawski MP. Gallium nitride growth using diethyl gallium chloride as an alternative gallium source Journal of Crystal Growth. 213: 1-9. DOI: 10.1557/S1092578300002714  0.442
2000 Feng Z, Lovell EG, Engelstad RL, Kuech TF, Babcock SE. Simulation of Stress Generation during GaN Lateral Epitaxial Overgrowth Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G3.15  0.354
2000 Kuech T, Gu S, Wate R, Zhang L, Sun J, Dumesic J, Redwing J. The Chemistry of GaN Growth Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G1.1  0.661
2000 Gu S, Zhang R, Zhang L, Kuech TF. Lateral and vertical growth study in the initial stages of GaN growth on sapphire with ZnO buffer layers by hydride vapor phase epitaxy Materials Research Society Symposium - Proceedings. 622. DOI: 10.1557/Proc-622-T4.9.1  0.425
2000 Gu S, Zhang R, Zhang L, Kuech TF. Lateral and Vertical Growth Study in the Initial Stages of GaN Growth on Sapphire with ZnO Buffer Layers by Hydride Vapor Phase Epitaxy Mrs Proceedings. 622. DOI: 10.1557/PROC-622-T4.9.1  0.312
2000 Paulson C, Hawkins B, Sun J, Ellis AB, Mccaughan L, Kuech TF. Photoreflectance near-field scanning optical microscopy Materials Research Society Symposium - Proceedings. 588: 13-17. DOI: 10.1557/Proc-588-13  0.438
2000 Hansen DM, Moran PD, Kuech TF. Low-pressure chemical vapor deposition of borosilicate glasses and their application to wafer bonding Materials Research Society Symposium - Proceedings. 587. DOI: 10.1557/Proc-587-O4.7  0.373
2000 Paulson C, Ellis AB, McCaughan L, Hawkins B, Sun J, Kuech TF. Demonstration of near-field scanning photoreflectance spectroscopy Applied Physics Letters. 77: 1943-1945. DOI: 10.1063/1.1312253  0.457
2000 Yi SS, Hansen DM, Inoki CK, Harris DL, Kuan TS, Kuech TF. Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition Applied Physics Letters. 77: 842-844. DOI: 10.1063/1.1306919  0.43
2000 Herndon MK, Bradford WC, Collins RT, Hawkins BE, Kuech TF, Friedman DJ, Kurtz SR. Near-field scanning optical microscopy cross-sectional measurements of crystalline GaAs solar cells Applied Physics Letters. 77: 100-102. DOI: 10.1063/1.126890  0.345
2000 Gu S, Zhang R, Sun J, Zhang L, Kuech TF. Role of interfacial compound formation associated with the use of ZnO buffers layers in the hydride vapor phase epitaxy of GaN Applied Physics Letters. 76: 3454-3456. DOI: 10.1063/1.126675  0.603
2000 Moran PD, Hansen DM, Matyi RJ, Mawst LJ, Kuech TF. Experimental test for elastic compliance during growth on glass-bonded compliant substrates Applied Physics Letters. 76: 2541-2543. DOI: 10.1063/1.126402  0.405
2000 Joshkin VA, Moran P, Saulys D, Kuech TF, McCaughan L, Oktyabrsky SR. Growth of oriented lithium niobate on silicon by alternating gas flow chemical beam epitaxy with metalorganic precursors Applied Physics Letters. 76: 2125-2127. DOI: 10.1063/1.126274  0.436
2000 Sun J, Rickert KA, Redwing JM, Ellis AB, Himpsel FJ, Kuech TF. p-GaN surface treatments for metal contacts Applied Physics Letters. 76: 415-417. DOI: 10.1063/1.125772  0.642
2000 Inoki CK, Harris DL, Kuan TS, Yi SS, Hansen DM, Kuech TF. Lateral Epitaxial Overgrowth of GaSb on GaAs and GaSb Substrates Microscopy and Microanalysis. 6: 1098-1099. DOI: 10.1017/S1431927600037983  0.41
2000 Maxson JB, Perkins N, Savage DE, Woll AR, Zhang L, Kuech TF, Lagally MG. Novel dark-field imaging of GaN {0001} surfaces with low-energy electron microscopy Surface Science. 464: 217-222. DOI: 10.1016/S0039-6028(00)00672-5  0.336
2000 Watwe RM, Dumesic JA, Kuech TF. Gas-phase chemistry of metalorganic and nitrogen-bearing compounds Journal of Crystal Growth. 221: 751-757. DOI: 10.1016/S0022-0248(00)00811-3  0.305
2000 Saulys D, Joshkin V, Khoudiakov M, Kuech TF, Ellis AB, Oktyabrsky SR, McCaughan L. An examination of the surface decomposition chemistry of lithium niobate precursors under high vacuum conditions Journal of Crystal Growth. 217: 287-301. DOI: 10.1016/S0022-0248(00)00412-7  0.397
2000 Zheng Y, Moran PD, Guan ZF, Lau SS, Hansen DM, Kuech TF, Haynes TE, Hoechbauer T, Nastasi M. Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding Journal of Electronic Materials. 29: 916-920. DOI: 10.1007/S11664-000-0181-6  0.387
2000 Cederberg JG, Bieg B, Huang J-, Stockman SA, Peanasky MJ, Kuech TF. Oxygen-related deep levels in Al0.5In0.5P grown by MOVPE Journal of Electronic Materials. 29: 426-429. DOI: 10.1007/S11664-000-0155-8  0.643
2000 Bieg B, Cederberg JG, Kuech TF. High-temperature hysteretic electronic effects of (AlxGa1−x)0.5In0.5P (x>0.65) Journal of Electronic Materials. 29: 231-236. DOI: 10.1007/S11664-000-0148-7  0.626
2000 Hansen DM, Charters D, Au YL, Mak WK, Tejasukmana W, Moran PD, Kuech TF. Mechanistic study of Borosilicate glass growth by low-pressure chemical vapor deposition from tetraethylorthosilicate and trimethylborate Journal of Electronic Materials. 29: 1312-1318. DOI: 10.1007/S11664-000-0131-3  0.385
2000 Sun J, Redwing JM, Kuech TF. Model development of GaN MOVPE growth chemistry for reactor design Journal of Electronic Materials. 29: 2-9. DOI: 10.1007/S11664-000-0085-5  0.655
2000 Bieg B, Cederberg JG, Kuech TF. High-temperature hysteretic electronic effects of (AlxGa1-x)0.5In0.5P (x>0.65) Journal of Electronic Materials. 29: 231-236.  0.594
1999 Kim S, Li X, Coleman JJ, Zhang R, Hansen DM, Kuech TF, Bishop SG. Photoluminescence and Photoluminescence Excitation Spectroscopy of in Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 4: 946-951. DOI: 10.1557/S1092578300003641  0.363
1999 Reuter EE, Zhang R, Kuech TF, Bishop SG. Photoluminescence excitation spectroscopy of carbon-doped gallium nitride Materials Research Society Symposium - Proceedings. 537. DOI: 10.1557/S1092578300002738  0.343
1999 Zhang L, Zhang R, Boleslawski MP, Kuech T. Gallium Nitride Growth Using Diethylgallium Chloride as an Alternative Gallium Source Mrs Internet Journal of Nitride Semiconductor Research. 4: 351-356. DOI: 10.1557/s1092578300002714  0.354
1999 Rehder E, Zhou M, Zhang L, Perkins NR, Babcock SE, Kuech TF. Structure of AlN on Si (111) Deposited with Metal Organic Vapor Phase Epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 4: 322-326. DOI: 10.1557/S1092578300002660  0.793
1999 Kuan TS, Inoki CK, Hsu Y, Harris DL, Zhang R, Gu S, Kuech TF. Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W2.6  0.397
1999 Sun J, Himpsel FJ, Ellis AB, Kuech TF. In situ surface passivation of GaAs by thermal nitridation using metalorganic vapor phase epitaxy Materials Research Society Symposium - Proceedings. 573: 15-20. DOI: 10.1557/Proc-573-15  0.565
1999 Sun J, Redwing JM, Kuech TF. Comparative study of GaN growth process by MOVPE Materials Research Society Symposium - Proceedings. 572: 463-468. DOI: 10.1557/Proc-572-463  0.638
1999 Moran PD, Hansen DM, Matyi RJ, Redwing JM, Kuech TF. Realization and characterization of ultrathin GaAs-on-insulator structures Journal of the Electrochemical Society. 146: 3506-3509. DOI: 10.1149/1.1392505  0.602
1999 Sun J, Seo DJ, O'Brien WL, Himpsel FJ, Ellis AB, Kuech TF. Chemical bonding and electronic properties of SeS2-treated GaAs(100) Journal of Applied Physics. 85: 969-977. DOI: 10.1063/1.369217  0.59
1999 Cederberg JG, Culp TD, Bieg B, Pfeiffer DR, Winter CH, Bray KL, Kuech TF. Incorporation of optically active erbium into GaAs using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium Journal of Applied Physics. 85: 1825-1831. DOI: 10.1063/1.369179  0.633
1999 Moran PD, Hansen DM, Matyi RJ, Cederberg JG, Mawst LJ, Kuech TF. InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality Applied Physics Letters. 75: 1559-1561. DOI: 10.1063/1.124754  0.67
1999 Li J, Kuech TF. Impurity Incorporation and the Surface Morphology of MOVPE Grown GaAs Journal of Electronic Materials. 28: 124-133. DOI: 10.1007/S11664-999-0230-8  0.412
1999 Sun J, Redwing JM, Kuech TF. Transport and reaction behaviors of precursors during metalorganic vapor phase epitaxy of gallium nitride Physica Status Solidi (a) Applied Research. 176: 693-698. DOI: 10.1002/(Sici)1521-396X(199911)176:1<693::Aid-Pssa693>3.0.Co;2-Z  0.645
1999 Zhang L, Zhang R, Boleslawski MP, Kuech TF. Gallium nitride growth using diethylgallium chloride as an alternative gallium source Materials Research Society Symposium - Proceedings. 537.  0.352
1998 Babcock SE, Dunn KA, Zhou M, Reeves JL, Kuech TF, Hansen DM, Moran PD. Microstructure of Epitaxial (InGa)As on a Borosilicate Glass-Bonded Compliant Substrate Materials Science Forum. 783-786. DOI: 10.4028/Www.Scientific.Net/Msf.294-296.783  0.44
1998 Zhang R, Zhang L, Hansen D, Boleslawski MP, Chen K, Lu D, Shen B, Zheng Y, Kuech T. Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy Mrs Proceedings. 537. DOI: 10.1557/S1092578300002908  0.457
1998 Zhang L, Zhang R, Boleslawski MP, Kuech T. Gallium Nitride Growth Using Diethylgallium Chloride as an Alternative Gallium Source Mrs Proceedings. 537. DOI: 10.1557/PROC-537-G3.62  0.351
1998 Rehder E, Zhou M, Zhang L, Perkins NR, Babcock SE, Kuech TF. Structure of Ain on Si (111) Deposited with Metal Organic Vapor Phase Epitaxy Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G3.56  0.791
1998 Zhang R, Kuech TF. Incorporation Of Er Into GaN By in-situ Doping During Halide Vapor Phase Epitaxy Mrs Proceedings. 512: 327. DOI: 10.1557/Proc-512-327  0.377
1998 Zhang R, Zhang L, Perkins N, Kuech TF. Influence of C, N and O Ion-Implantation on Yellow Luminescence Mrs Proceedings. 512. DOI: 10.1557/Proc-512-321  0.326
1998 xi Sun J, Himpsel FJ, Kuech TF. Controlled Surface Fermi-level on the SeS2-passivated n-GaAs (100) Mrs Proceedings. 510. DOI: 10.1557/Proc-510-653  0.37
1998 Winder EJ, Kuech TF, Ellis AB. Photoluminescence studies of cadmium selenide crystals in contact with group III trialkyl derivatives Journal of the Electrochemical Society. 145: 2475-2479. DOI: 10.1149/1.1838663  0.339
1998 Rudkevich E, Liu F, Savage DE, Kuech TF, McCaughan L, Lagally MG. Hydrogen Induced Si Surface Segregation on Ge-Covered Si(001) Physical Review Letters. 81: 3467-3470. DOI: 10.1103/Physrevlett.81.3467  0.366
1998 Gilliland GD, Petrovic MS, Hjalmarson HP, Wolford DJ, Northrop GA, Kuech TF, Smith LM, Bradley JA. Time-dependent heterointerfacial band bending and quasi-two-dimensional excitonic transport in GaAs structures Physical Review B. 58: 4728-4732. DOI: 10.1103/Physrevb.58.4728  0.314
1998 Culp TD, Cederberg JG, Bieg B, Kuech TF, Bray KL, Pfeiffer D, Winter CH. Photoluminescence and free carrier interactions in erbium-doped GaAs Journal of Applied Physics. 83: 4918-4927. DOI: 10.1063/1.367293  0.613
1998 Zhang R, Kuech TF. Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy Applied Physics Letters. 72: 1611-1613. DOI: 10.1063/1.121144  0.39
1998 Hansen DM, Zhang R, Perkins NR, Safvi S, Zhang L, Bray KL, Kuech TF. Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er Applied Physics Letters. 72: 1244-1246. DOI: 10.1063/1.121034  0.314
1998 Lorenz JK, Kuech TF, Ellis AB. Cadmium selenide photoluminescence as a probe for the surface adsorption of dialkyl chalcogenides Langmuir. 14: 1680-1683. DOI: 10.1021/La971196S  0.325
1998 Edwards NV, Yoo SD, Bremser MD, Horton MN, Perkins NR, Weeks TW, Liu H, Stall RA, Kuech TF, Davis RF, Aspnes DE. Spectroscopic ellipsometry and low-temperature reflectance: Complementary analysis of GaN thin films Thin Solid Films. 313: 187-192. DOI: 10.1016/S0040-6090(97)00815-8  0.369
1998 Bandić ZZ, Piquette EC, Bridger PM, Beach RA, Kuech TF, McGill TC. Nitride based high power devices: design and fabrication issues Solid-State Electronics. 42: 2289-2294. DOI: 10.1016/S0038-1101(98)00227-5  0.307
1998 Cederberg JG, Bieg B, Huang J-, Stockman SA, Peanasky MJ, Kuech TF. Intrinsic and oxygen-related deep level defects in In0.5(AlxGa1−x)0.5P grown by metal-organic vapor phase epitaxy Journal of Crystal Growth. 195: 63-68. DOI: 10.1016/S0022-0248(98)00677-0  0.652
1998 Sun J, Zhang L, Kuech TF. In situ thermal nitridation of GaAs using metalorganic vapor phase epitaxy Journal of Crystal Growth. 195: 711-717. DOI: 10.1016/S0022-0248(98)00599-5  0.601
1998 Cederberg JG, Culp TD, Bieg B, Pfeiffer D, Winter CH, Bray KL, Kuech TF. Erbium-doped GaAs grown using the novel precursor tris(3,5-di-tert-butylpyrazolato)bis(4-tert-butylpyridine)erbium Journal of Crystal Growth. 195: 105-111. DOI: 10.1016/S0022-0248(98)00582-X  0.634
1998 Li J, Mirabedini A, Mawst LJ, Savage DE, Matyi RJ, Kuech TF. Effect of interface roughness on performance of AlGaAs/InGaAs/GaAs resonant tunneling diodes Journal of Crystal Growth. 195: 617-623. DOI: 10.1016/S0022-0248(98)00581-8  0.445
1998 Hansen DM, Moran PD, Dunn KA, Babcock SE, Matyi RJ, Kuech TF. Development of a glass-bonded compliant substrate Journal of Crystal Growth. 195: 144-150. DOI: 10.1016/S0022-0248(98)00579-X  0.438
1998 Zhang R, Kuech TF. Hydrogen induced yellow luminescence in GaN grown by halide vapor phase epitaxy Journal of Electronic Materials. 27. DOI: 10.1007/S11664-998-0185-1  0.418
1997 Cederberg JG, Bieg B, Huang J, Stockman SA, Peanasky MJ, Kuech TF. Oxygen-Related Defects in In0.5(AlxGa1−x)0.5P Grown by MOVPE Mrs Proceedings. 484. DOI: 10.1557/Proc-484-611  0.605
1997 Sun J, Seo DJ, O'Brien WL, Himpsel FJ, Kuech TF. Chemical Bonding on GaAs (001) Surfaces Passivated Using SeS2 Mrs Proceedings. 484. DOI: 10.1557/Proc-484-589  0.558
1997 Bandić ZZ, Piquette EC, Bridger PM, Kuech TF, Mcgill TC. Design And Fabrication Of Nitride Based High Power Devices Mrs Proceedings. 483: 399. DOI: 10.1557/Proc-483-399  0.31
1997 Zhang R, Kuech TF. Carbon and hydrogen induced yellow luminescence in gallium nitride grown by halide vapor phase epitaxy Materials Research Society Symposium - Proceedings. 482: 709-714. DOI: 10.1557/Proc-482-709  0.415
1997 Zhou M, Perkins NR, Rehder E, Kuech TF, Babcock SE. The Effect of Growth Temperature On The Microstructure of Movpe AlN/Si (111) Mrs Proceedings. 482. DOI: 10.1557/Proc-482-185  0.815
1997 Edwards NV, Yoo SD, Bremser MD, Horton MN, Perkins NR, Weeks TW, Liu H, Stall RA, Kuech TF, Davis RF, Aspnes DE. Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters Materials Research Society Symposium - Proceedings. 449: 781-786. DOI: 10.1557/Proc-449-781  0.324
1997 Safvi SA, Perkins NR, Horton MN, Kuech TF. Effect of growth parameters and local gas-phase concentrations on the uniformity and material properties of GaN/sapphire grown by hydride vapor-phase epitaxy Materials Research Society Symposium - Proceedings. 449: 289-294. DOI: 10.1557/Proc-449-289  0.424
1997 Ingerly DB, Chang YA, Perkins NR, Kuech TF. PtIn2 ohmic contacts to n-GaN Materials Research Society Symposium - Proceedings. 449: 1103-1108. DOI: 10.1557/Proc-449-1103  0.375
1997 Safvi SA, Redwing JM, Tischler MA, Kuech TF. GaN growth by metallorganic vapor phase epitaxy: A comparison of modeling and experimental measurements Journal of the Electrochemical Society. 144: 1789-1796. DOI: 10.1149/1.1837681  0.569
1997 Geisz JF, Safvi SA, Kuech TF. Photoreflectance study of the long-term stability of various surface chemical treatments on (001) n-GaAs Journal of the Electrochemical Society. 144: 732-736. DOI: 10.1149/1.1837476  0.392
1997 Rudkevich E, Savage DE, Cai W, Bean JC, Sullivan JS, Nayak S, Kuech TF, McCaughan L, Lagally MG. Extended-spectral-range Fourier transform infrared-attenuated total reflection spectroscopy on Si surfaces using a novel Si coated Ge attenuated total reflection prism Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 15: 2153-2157. DOI: 10.1116/1.580622  0.353
1997 Cederberg JG, Bray KL, Kuech TF. Oxygen-related defects in low phosphorous content GaAs1−yPy grown by metal organic vapor phase epitaxy Journal of Applied Physics. 82: 2263-2269. DOI: 10.1063/1.366032  0.642
1997 Culp TD, Hömmerich U, Redwing JM, Kuech TF, Bray KL. Photoluminescence studies of erbium-doped GaAs under hydrostatic pressure Journal of Applied Physics. 82: 368-374. DOI: 10.1063/1.365821  0.546
1997 Ingerly DB, Chang YA, Perkins NR, Kuech TF. Ohmic contacts to n-GaN using PtIn2 Applied Physics Letters. 70: 108-110. DOI: 10.1063/1.119277  0.375
1997 Kang JU, Frankel MY, Huang JW, Kuech TF. Ultrafast carrier trapping in oxygen-doped metal-organic vapor phase epitaxy GaAs Applied Physics Letters. 70: 1560-1562. DOI: 10.1063/1.118616  0.369
1997 Liu QZ, Yu LS, Lau SS, Redwing JM, Perkins NR, Kuech TF. Thermally Stable Ptsi Schottky Contact On N-Gan Applied Physics Letters. 70: 1275-1277. DOI: 10.1063/1.118551  0.562
1997 Liu QZ, Shen L, Smith KV, Tu CW, Yu ET, Lau SS, Perkins NR, Kuech TF. Epitaxy of Al films on GaN studied by reflection high-energy electron diffraction and atomic force microscopy Applied Physics Letters. 70: 990-992. DOI: 10.1063/1.118458  0.431
1997 Brainard RJ, Paulson CA, Saulys D, Gaines DF, Kuech TF, Ellis AB. Modulation of cadmium selenide photoluminescence intensity by adsorption of silapentanes and chlorinated silanes Journal of Physical Chemistry B. 101: 11180-11184. DOI: 10.1021/Jp9725590  0.374
1997 Ellis AB, Brainard RJ, Kepler KD, Moore DE, Winder EJ, Kuech TF, Lisensky GC. Modulation of the photoluminescence of semiconductors by surface adduct formation: An application of inorganic photochemistry to chemical sensing Journal of Chemical Education. 74: 680-684. DOI: 10.1021/Ed074P680  0.309
1997 Edwards NV, Yoo SD, Bremser MD, Zheleva T, Horton MN, Perkins NR, Weeks TW, Liu H, Stall RA, Kuech TF, Davis RF, Aspnes DE. Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films Materials Science and Engineering B. 50: 134-141. DOI: 10.1016/S0921-5107(97)00151-7  0.348
1997 Rudkevich E, Saulys D, Gaines D, Kuech TF, McCaughan L. Adsorption and decomposition studies of t-butyl silane on Si(100)-(2 × 1) surfaces using FTIR-ATR spectroscopy Surface Science. 383: 69-77. DOI: 10.1016/S0039-6028(97)00120-9  0.361
1997 Safvi S, Perkins N, Horton M, Matyi R, Kuech T. Effect of reactor geometry and growth parameters on the uniformity and material properties of grown by hydride vapor-phase epitaxy Journal of Crystal Growth. 182: 233-240. DOI: 10.1016/S0022-0248(97)00375-8  0.423
1997 Li J, Kuech TF. Evolution of surface structure during carbon doping in the metal-organic vapor-phase epitaxial growth of GaAs Journal of Crystal Growth. 181: 171-180. DOI: 10.1016/S0022-0248(97)00290-X  0.443
1997 Li J, Kuech TF. Surface morphology of carbon-doped GaAs grown by MOVPE Journal of Crystal Growth. 170: 292-296. DOI: 10.1016/S0022-0248(96)00589-1  0.419
1997 Liu J, Zhi D, Redwing JM, Tischler MA, Kuech TF. GaN films studied by near-field scanning optical microscopy, atomic force microscopy and high resolution X-ray diffraction Journal of Crystal Growth. 170: 357-361. DOI: 10.1016/S0022-0248(96)00588-X  0.554
1997 Booker G, Daly M, Klipstein P, Lakrimi M, Kuech T, Li J, Lyapin S, Mason N, Murgatroyd I, Portal J, Nicholas R, Symons D, Vicente P, Walker P. Growth of strained layer superlattices by MOVPE III. Use of UV absorption to monitor alkyl stability in the reactor Journal of Crystal Growth. 170: 777-782. DOI: 10.1016/S0022-0248(96)00578-7  0.421
1997 Cederberg JG, Bray KL, Kuech TF. Oxygen-related defects in low phosphorous content GaAs1-yPy grown by metal organic vapor phase epitaxy Journal of Applied Physics. 82: 2263-2269.  0.608
1996 Zhang R, Huang Z, Chen JC, Zheng Y, Kuech TF. Study of Traps in GaN by Thermally-Stimulated Current Mrs Proceedings. 449. DOI: 10.1557/Proc-449-633  0.312
1996 Safvi SA, Redwing JM, Thon A, Flynn JS, Tischler MA, Kuech TF. MOVPE GaN Gas-Phase Chemistry for Reactor Design and Optimization Mrs Proceedings. 449: 101. DOI: 10.1557/Proc-449-101  0.571
1996 Huang JW, Lu H, Cederberg JG, Bhat I, Kuech TF. Electrical Characterization of Magnesium-Doped Gallium Nitride Grown by Metalorganic Vapor Phase Epitaxy Mrs Proceedings. 423. DOI: 10.1557/Proc-423-601  0.657
1996 Thon A, Safvi SA, Kuech TF. High temperature gas phases reactions of trimethylgallium with ammonia and trimethylamine Materials Research Society Symposium - Proceedings. 423: 445-450. DOI: 10.1557/Proc-423-445  0.344
1996 Matyi RJ, Zhi D, Perkins NR, Horton MN, Kuech TF. High Resolution X-Ray Diffraction Analysis Of Gallium Nitride Grown On Sapphire By Halide Vapor Phase Epitaxy Mrs Proceedings. 423: 239. DOI: 10.1557/Proc-423-239  0.364
1996 Safvi SA, Perkins NR, Horton MN, Thon A, Zhi D, Kuech TF. Optimization of Reactor Geometry and Growth Conditions for GaN Halide Vapor Phase Epitaxy Mrs Proceedings. 423: 227. DOI: 10.1557/Proc-423-227  0.363
1996 Ryan JM, Kuech TF, Bray KL. Oxygen-related defects in high purity MOVPE AlGaAs Materials Research Society Symposium - Proceedings. 421: 27-32. DOI: 10.1557/Proc-421-27  0.353
1996 Thon A, Kuech TF. Gas phase adduct reactions in MOCVD growth of GaN Materials Research Society Symposium - Proceedings. 395: 97-102. DOI: 10.1557/Proc-395-97  0.347
1996 Huang JW, Bray KL, Kuech TF. Compensation of shallow impurities in oxygen-doped metalorganic vapor phase epitaxy grown GaAs Journal of Applied Physics. 80: 6819-6826. DOI: 10.1063/1.363811  0.379
1996 Deng F, Liu QZ, Yu LS, Guan ZF, Lau SS, Redwing JM, Geisz J, Kuech TF. Strain‐induced band‐gap modulation in GaAs/AlGaAs quantum‐well structure using thin‐film stressors Journal of Applied Physics. 79: 1763-1771. DOI: 10.1063/1.360966  0.539
1996 Thon A, Kuech TF. High temperature adduct formation of trimethylgallium and ammonia Applied Physics Letters. 69: 55-57. DOI: 10.1063/1.118117  0.364
1996 Liu QZ, Lau SS, Perkins NR, Kuech TF. Room temperature epitaxy of Pd films on GaN under conventional vacuum conditions Applied Physics Letters. 69: 1722-1724. DOI: 10.1063/1.118009  0.339
1996 Liu J, Kuech TF. A near-field scanning optical microscopy study of the uniformity of GaAs surface passivation Applied Physics Letters. 69: 662-664. DOI: 10.1063/1.117798  0.409
1996 Ma J, Garni B, Perkins N, O’Brien WL, Kuech TF, Lagally MG. Photoemission spectroscopy studies of the surface of GaN films grown by vapor phase epitaxy Applied Physics Letters. 69: 3351-3353. DOI: 10.1063/1.117303  0.4
1996 Liu J, Perkins NR, Horton MN, Redwing JM, Tischler MA, Kuech TF. A near‐field scanning optical microscopy study of the photoluminescence from GaN films Applied Physics Letters. 69: 3519-3521. DOI: 10.1063/1.117231  0.598
1996 Garni B, Ma J, Perkins N, Liu J, Kuech TF, Lagally MG. Scanning tunneling microscopy and tunneling luminescence of the surface of GaN films grown by vapor phase epitaxy Applied Physics Letters. 68: 1380-1382. DOI: 10.1063/1.116086  0.418
1996 Nayak S, Huang JW, Redwing JM, Savage DE, Lagally MG, Kuech TF. Influence of oxygen on surface morphology of metalorganic vapor phase epitaxy grown GaAs (001) Applied Physics Letters. 68: 1270-1272. DOI: 10.1063/1.115949  0.583
1996 Bhattacharya A, Mawst LJ, Nayak S, Li J, Kuech TF. Interface structures of InGaAs/InGaAsP/InGaP quantum well laser diodes grown by metalorganic chemical vapor deposition on GaAs substrates Applied Physics Letters. 68: 2240-2242. DOI: 10.1063/1.115871  0.447
1996 Botez D, Mawst L, Bhattacharya A, Lopez J, Li J, Kuech T, Iakovlev V, Suruceanu G, Caliman A, Syrbu A. 66% CW wallplug efficiency from Al-free 0.98 [micro sign]m-emitting diode lasers Electronics Letters. 32: 2012. DOI: 10.1049/El:19961300  0.32
1996 Kuech TF, Nayak S, Huang JW, Li J. Chemical and physical effects in oxygen incorporation during the metalorganic vapor phase epitaxial growth of GaAs Journal of Crystal Growth. 163: 171-179. DOI: 10.1016/0022-0248(95)01056-4  0.378
1996 Kuech TF, Perkins NR. Metalorganic vapor phase epitaxy of II-VI materials for visible light emitters Journal of Crystal Growth. 166: 558-565. DOI: 10.1016/0022-0248(95)00891-8  0.389
1996 Safvi SA, Redwing JM, Tischler MA, Kuech TF. Modeling study of GaN growth by MOVPE Materials Research Society Symposium - Proceedings. 395: 255-260.  0.498
1995 Safvi SA, Redwing JM, Tischler MA, Kuech TF. A modeling study of GaN growth by MOVPE Mrs Proceedings. 395: 255. DOI: 10.1557/Proc-395-255  0.556
1995 Perkins NR, Horton MN, Bandic ZZ, McGill TC, Kuech TF. Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon Substrates Mrs Proceedings. 395: 243. DOI: 10.1557/Proc-395-243  0.451
1995 Huang JW, Kuech TF. Intentional defect incorporation in metalorganic vapor phase epitaxy indium gallium arsenide by oxygen doping Materials Research Society Symposium - Proceedings. 378: 165-170. DOI: 10.1557/Proc-378-165  0.393
1995 Gaines D, Hop M, Kuech T, Redwing J, Saulys D, Thon A. New Si CVD precursors: preparation and pre-screening Materials Research Society Symposium - Proceedings. 377: 81-86. DOI: 10.1557/Proc-377-81  0.556
1995 Liu QZ, Deng F, Yu LS, Guan ZF, Pappert SA, Yu PKL, Lau SS, Redwing JM, Kuech TF. Photoelastic waveguides and the controlled introduction of strain in III‐V semiconductors by means of thin film technology Journal of Applied Physics. 78: 236-244. DOI: 10.1063/1.360657  0.527
1995 Chen CP, Chang YA, Kuech TF. Schottky barrier enhancement using reacted Ni2Al 3/Ni/n-GaAs, Ni/Al/Ni/n-GaAs, and NiAl/Al/Ni/n-GaAs contacts Journal of Applied Physics. 77: 4777-4782. DOI: 10.1063/1.359397  0.367
1995 Geisz JF, Kuech TF, Ellis AB. Changing photoluminescence intensity from GaAs/Al0.3Ga 0.7As heterostructures upon chemisorption of SO2 Journal of Applied Physics. 77: 1233-1240. DOI: 10.1063/1.358924  0.368
1995 Huang JW, Kuech TF, Lu H, Bhat I. Electrical characterization of Mg-doped GaN grown by metalorganic vapor phase epitaxy Applied Physics Letters. 2392. DOI: 10.1063/1.116144  0.334
1995 Lin C‐, Chang YA, Pan N, Huang J‐, Kuech TF. Pdal Schottky Contact To In0.52Al0.48As Grown By Metalorganic Chemical Vapor Deposition Applied Physics Letters. 67: 3587-3589. DOI: 10.1063/1.115326  0.356
1995 Huang JW, Kuech TF, Anderson TJ. Oxygen-based deep levels in metalorganic vapor phase epitaxy indium gallium arsenide Applied Physics Letters. 67: 1116. DOI: 10.1063/1.114979  0.376
1995 Frankel MY, Huang JW, Kuech TF. Ultrafast photodetector materials based on oxygen-doped metalorganic vapor phase epitaxy GaAs Applied Physics Letters. 634. DOI: 10.1063/1.114143  0.349
1995 Nayak S, Savage D, Chu H, Lagally M, Kuech T. In situ RHEED and AFM investigation of growth front morphology evolution of Si(001) grown by UHV-CVD Journal of Crystal Growth. 157: 168-171. DOI: 10.1016/0022-0248(95)00383-5  0.429
1995 Winder EJ, Moore DE, Neu DR, Ellis AB, Geisz JF, Kuech TF. Detection of ammonia, phosphine, and arsine gases by reversible modulation of cadmium selenide photoluminescence intensity Journal of Crystal Growth. 148: 63-69. DOI: 10.1016/0022-0248(94)00867-1  0.36
1995 Huang JW, Ryan JM, Bray KL, Kuech TF. Controlled oxygen incorporation in indium gallium arsenide and indium phosphide grown by metalorganic vapor phase epitaxy Journal of Electronic Materials. 24: 1539-1546. DOI: 10.1007/Bf02676808  0.402
1994 Nayak S, Redwing J, Huang J, Lagally M, Kuech T. Influence of Impurities On Mechanisms of Growth in Movpe GaAs Mrs Proceedings. 367. DOI: 10.1557/Proc-367-293  0.621
1994 Perkins NR, Dawson-Elli DF, Kuech TF. MOVPE growth and doping of ZnTe using tertiarybutylphosphine as the metalorganic doping precursor Materials Research Society Symposium - Proceedings. 340: 469-474. DOI: 10.1557/Proc-340-469  0.451
1994 Nayak S, Redwing J, Kuech T, Savage D, Lagally M. Interfacial Roughness in GaAs/A1GaAs Multilayers: Influence of Controlled Impurity Addition Mrs Proceedings. 332. DOI: 10.1557/Proc-332-249  0.563
1994 Huang JW, Kuech TF. Deep level structure of semi-insulating MOVPE GaAs grown by controlled oxygen incorporation Materials Research Society Symposium Proceedings. 325: 305-310. DOI: 10.1557/Proc-325-305  0.392
1994 Chen CP, Kuech TF, Chang YA. Enhancement of Schottky barrier height to n-GaAs using NiAl, NiAl/Al/Ni, and Ni/Al/Ni layer structures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 1915-1919. DOI: 10.1116/1.578982  0.372
1994 Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. Luminescence kinetics of intrinsic excitonic states quantum-mechanically bound near high-quality (n - Type GaAs)/(p-type AlxGa1-xAs) heterointerfaces Physical Review B. 49: 8113-8125. DOI: 10.1103/Physrevb.49.8113  0.348
1994 Ryan JM, Huang JW, Kuech TF, Bray KL. The effects of temperature and oxygen concentration on the photoluminescence of epitaxial metalorganic vapor-phase epitaxy GaAs:O Journal of Applied Physics. 76: 1175-1179. DOI: 10.1063/1.357842  0.37
1994 Redwing JM, Kuech TF, Gordon DC, Vaartstra BA, Lau SS. Growth studies of erbium-doped GaAs deposited by metalorganic vapor phase epitaxy using novel cyclopentadienyl-based erbium sources Journal of Applied Physics. 76: 1585-1591. DOI: 10.1063/1.357737  0.59
1994 Geisz JF, Kuech TF, Lagally MG, Cardone F, Potemski RM. Film stress of sputtered W/C multilayers and strain relaxation upon annealing Journal of Applied Physics. 75: 1530-1533. DOI: 10.1063/1.356390  0.388
1994 Huang JW, Kuech TF. Multiple deep levels in metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporation Applied Physics Letters. 65: 604-606. DOI: 10.1063/1.112270  0.398
1994 Wolford DJ, Gilliland GD, Kuech TF, Klem JF, Hjalmarson HP, Bradley JA, Tsang CF, Martinsen J. Comparison of transport, recombination, and interfacial quality in molecular beam epitaxy and organometallic vapor-phase epitaxy GaAs/Al xGa1-xAs structures Applied Physics Letters. 64: 1416-1418. DOI: 10.1063/1.111901  0.384
1994 Chen CP, Chang YA, Huang JW, Kuech TF. High Schottky barrier height of the Al/n-GaAs diodes achieved by sputter deposition Applied Physics Letters. 64: 1413-1415. DOI: 10.1063/1.111900  0.408
1994 Chen CP, Chang YA, Kuech TF. Schottky enhancement of reacted NiAl/n-GaAs contacts Applied Physics Letters. 64: 3485-3487. DOI: 10.1063/1.111248  0.373
1994 Hjalmarson HP, Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. Temperature-dependent radiative recombination of free excitons in high-quality GaAs heterostructures Journal of Luminescence. 60: 827-829. DOI: 10.1016/0022-2313(94)90289-5  0.31
1994 Redwing JM, Nayak S, Savage DE, Lagally MG, Dawson-Elli DF, Kuech TF. The effect of controlled impurity incorporation on interfacial roughness in GaAs/AlxGa1-xAs superlattice structures grown by metalorganic vapor phase epitaxy Journal of Crystal Growth. 145: 792-798. DOI: 10.1016/0022-0248(94)91144-4  0.613
1994 Huang JW, Kuech TF. Electrical characterization of semi-insulating metalorganic vapor phase epitaxy GaAs grown by controlled oxygen incorporation Journal of Crystal Growth. 145: 462-467. DOI: 10.1016/0022-0248(94)91092-8  0.357
1994 Redwing JM, Simka H, Jensen KF, Kuech TF. Study of silicon incorporation from SiH4 in GaAs layers grown by metalorganic vapor phase epitaxy using tertiarybutylarsine Journal of Crystal Growth. 145: 397-402. DOI: 10.1016/0022-0248(94)91082-0  0.648
1994 Kuech TF, Redwing JM. Carbon doping in metalorganic vapor phase epitaxy Journal of Crystal Growth. 145: 382-389. DOI: 10.1016/0022-0248(94)91080-4  0.52
1994 Redwing JM, Kuech TF, Saulys D, Gaines DF. Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the group V source Journal of Crystal Growth. 135: 423-433. DOI: 10.1016/0022-0248(94)90130-9  0.573
1994 Huang JW, Gaines DF, Kuech TF, Potemski RM, Cardone F. Alkoxide precursors for controlled oxygen incorporation during metalorganic vapor phase epitaxy GaAs and AlxGa1-xAs growth Journal of Electronic Materials. 23: 659-667. DOI: 10.1007/Bf02653353  0.334
1993 Redwing J, Kuech T, Simka H, Jensen K. Study of Silicon Incorporation in GaAs Movpe Layers Grown With Tertiarybutylarsine Mrs Proceedings. 334. DOI: 10.1557/Proc-334-201  0.59
1993 Kuech TF, Redwing JM, Huang J, Nayak S. Controlled Impurity Introduction In CVD: Chemical, Electrical, and Morphological Influences Mrs Proceedings. 334. DOI: 10.1557/Proc-334-189  0.579
1993 Yu LS, Guan ZF, Deng F, Liu QZ, Pappert SA, Yu PKL, Lau SS, Redwing J, Geisz J, Kuech TF, Kattelus H, Suni I. Photoelastic Waveguides Formed by Interfacial Reactions on Semiconductor Heterostructures Mrs Proceedings. 326: 251. DOI: 10.1557/Proc-326-251  0.574
1993 Geisz JF, Phang YH, Kuech TF, Lagally MG, Cardone F, Potemski RM. Strain Relaxation and Oxide Formation on Annealed W/C Multilayers Mrs Proceedings. 321. DOI: 10.1557/Proc-321-215  0.366
1993 Chen C, Chang YA, Kuech TF. An Investigation of the Al/n-GaAs Diodes with High Schottky Barrier Heights Mrs Proceedings. 318. DOI: 10.1557/Proc-318-147  0.306
1993 Nayak S, Redwing JM, Kuech TF, Phang Y, Savage DE, Lagally MG. X-Ray Diffraction Determination of Interface Roughness in GaAs/AlxGa1-xAs Multilayers Mrs Proceedings. 312. DOI: 10.1557/Proc-312-137  0.554
1993 Wolford DJ, Gilliland GD, Kuech TF, Bradley JA, Hjalmarson HP. Optically determined minority-carrier transport in GaAs/AlxGa1-xAs heterostructures Physical Review B. 47: 15601-15608. DOI: 10.1103/Physrevb.47.15601  0.36
1993 Kuech TF. Selective epitaxy of compound semiconductors: Novel sources Semiconductor Science and Technology. 8: 967-978. DOI: 10.1088/0268-1242/8/6/002  0.335
1993 Gilliland GD, Wolford DJ, Kuech TF, Bradley JA, Hjalmarson HP. Minority-carrier recombination kinetics and transport in]] surface-free" GaAs/AlxGa1-xAs double heterostructures Journal of Applied Physics. 73: 8386-8396. DOI: 10.1063/1.353407  0.318
1992 Cargill GS, Segmüller A, Kuech TF, Theis TN. Lattice strain from DX centers and persistent photocarriers in Sn-doped and Si-doped Ga1-xAlxAs. Physical Review. B, Condensed Matter. 46: 10078-10085. PMID 10002847 DOI: 10.1103/Physrevb.46.10078  0.371
1992 Chen C, Jan C, Chang YA, Kuech T. A Tunable Schottky Barrier to n-GaAs Using Ni(Ga,Al) Contacts Mrs Proceedings. 281: 683. DOI: 10.1557/Proc-281-683  0.308
1992 Phang YH, Savage DE, Kuech TF, Lagally MG, Park JS, Wang KL. X‐ray diffraction determination of interfacial roughness correlation in SixGe1−x/Si and GaAs/AlxGa1−xAs superlattices Applied Physics Letters. 60: 2986-2988. DOI: 10.1063/1.106784  0.358
1992 Kuech TF. Perspectives on metal-organic vapor phase epitaxy growth: chemistry, structures and systems Thin Solid Films. 216: 77-83. DOI: 10.1016/0040-6090(92)90873-A  0.357
1992 Tischler MA, Tulipe DCL, Kuech TF, Magerlein JH, Hovel HJ. Improved Schottky Gate Characteristics for MOVPE-Grown GaAs MESFETs Journal of Crystal Growth. 124: 824-828. DOI: 10.1016/0022-0248(92)90558-Z  0.375
1992 Masi M, Simka H, Jensen KF, Kuech TF, Potemski R. Simulation of carbon doping of GaAs during MOVPE Journal of Crystal Growth. 124: 483-492. DOI: 10.1016/0022-0248(92)90504-C  0.322
1992 Kuech TF, Potemski R, Cardone F. Growth behavior of (C2H5)2GaCl and AsH3 based GaAs: low reactor pressure and temperatures Journal of Crystal Growth. 124: 318-325. DOI: 10.1016/0022-0248(92)90478-2  0.441
1992 Hierlemann MP, Kuech TF. Two-dimensional modeling of the growth of GaAs from (C2H5)2GaCl and AsH3 Journal of Crystal Growth. 124: 56-63. DOI: 10.1016/0022-0248(92)90437-N  0.378
1992 Kuech TF, Potemski R, Cardone F, Scilla G. Quantitative oxygen measurements in OMVPE Al x Ga1-x As grown by methyl precursors Journal of Electronic Materials. 21: 341-346. DOI: 10.1007/Bf02660464  0.378
1991 Yu ML, Buchan NI, Souda R, Kuech TF. Surface Chemistry and Mechanism of Atomic Layer Growth of GaAs Mrs Proceedings. 222: 3. DOI: 10.1557/Proc-222-3  0.392
1991 Buchan NI, Kuech TF, Tischler MA, Scilla G, Cardone F, Potemski R. Epitaxial Growth of GaAs with ( C 2 H 5 ) 2GaCl and AsH3 in a Hotwall Reactor Journal of the Electrochemical Society. 138: 2789-2794. DOI: 10.1149/1.2086057  0.334
1991 Goorsky MS, Kuech TF, Potemski RM. Epitaxial Growth and Selectivity of AlxGa1-xAs Using Novel Metalorganic Precursors Journal of the Electrochemical Society. 138: 1817-1826. DOI: 10.1149/1.2085879  0.443
1991 Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. Intrinsic, heterointerface excitonic states in GaAs(n)/Al<inf>0.3</inf>Ga<inf>0.7</inf>As(p) double heterostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2377-2383. DOI: 10.1116/1.585706  0.369
1991 Wolford DJ, Gilliland GD, Kuech TF, Smith LM, Martinsen J, Bradley JA, Tsang CF, Venkatasubramanian R, Ghandi SK, Hjalmarson HP. Intrinsic recombination and interface characterization in "surface-free" GaAs structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2369-2376. DOI: 10.1116/1.585705  0.419
1991 Buchan NI, Kuech TF, Beach D, Scilla G, Cardone F. The use of azo‐compounds as probes of carbon incorporation of nominally undoped metalorganic vapor phase epitaxy grown GaAs Journal of Applied Physics. 69: 2156-2160. DOI: 10.1063/1.348743  0.351
1991 Han CC, Wang XZ, Lau SS, Potemski RM, Tischler MA, Kuech TF. The temperature dependence of the contact resistivity of the Si/Ni(Mg) nonspiking contact scheme onp‐GaAs Journal of Applied Physics. 69: 3124-3129. DOI: 10.1063/1.348579  0.304
1991 Wang LC, Wang XZ, Hsu SN, Lau SS, Lin PSD, Sands T, Schwarz SA, Plumton DL, Kuech TF. An investigation of the Pd‐In‐Ge nonspiking Ohmic contact to n‐GaAs using transmission line measurement, Kelvin, and Cox and Strack structures Journal of Applied Physics. 69: 4364-4372. DOI: 10.1063/1.348360  0.371
1991 Goorsky MS, Kuech TF, Tischler MA, Potemski RM. Determination of epitaxial AlxGa1-xAs composition from x-ray diffraction measurements Applied Physics Letters. 59: 2269-2271. DOI: 10.1063/1.106040  0.377
1991 Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. Long-range, minority-carrier transport in high quality "surface- free" GaAs/AlGaAs double heterostructures Applied Physics Letters. 59: 216-218. DOI: 10.1063/1.105970  0.335
1991 Han CC, Wang XZ, Lau SS, Potemski RM, Tischler MA, Kuech TF. Thermally stable and nonspiking Pd/Sb(Mn) ohmic contact top‐GaAs Applied Physics Letters. 58: 1617-1619. DOI: 10.1063/1.105143  0.331
1991 Goorsky MS, Kuech TF, Cardone F, Mooney PM, Scilla GJ, Potemski RM. Characterization of epitaxial GaAs and AlxGa1-xAs layers doped with oxygen Applied Physics Letters. 58: 1979-1981. DOI: 10.1063/1.105038  0.396
1991 Kuech TF. The use of chloride based precursors in metalorganic vapor phase epitaxy Journal of Crystal Growth. 115: 52-60. DOI: 10.1016/0022-0248(91)90711-D  0.397
1991 Buchan NI, Kuech TF, Tischler MA, Potemski R. Epitaxial growth of GaAs with (C2H5)2GaCl and AsH3 in a hot-wall system Journal of Crystal Growth. 107: 331-336. DOI: 10.1016/0022-0248(91)90479-O  0.412
1991 Annapragada AV, Jensen KF, Kuech TF. Infrared spectroscopic determination of substitutional carbon in MOVPE grown films of GaAs Journal of Crystal Growth. 107: 248-253. DOI: 10.1016/0022-0248(91)90465-H  0.365
1991 Kuech TF, Goorsky MS, Tischler MA, Palevski A, Solomon P, Potemski R, Tsai CS, Lebens JA, Vahala KJ. Selective epitaxy of GaAs, AlxGa1-xAs, and InxGa1-xAs Journal of Crystal Growth. 107: 116-128. DOI: 10.1016/0022-0248(91)90443-9  0.423
1991 Buchan NI, Kuech TF, Scilla G, Cardone F. Carbon incorporation in metalorganic vapor phase epitaxy grown GaAs using CHyX4 - y, TMG and AsH3 Journal of Crystal Growth. 110: 405-414. DOI: 10.1016/0022-0248(91)90276-B  0.34
1990 Yu ML, Memmert U, Buchan NI, Kuech TF. Surface Chemistry of CVD Reactions Studied by Molecular Beam/Surface Scattering Mrs Proceedings. 204. DOI: 10.1557/Proc-204-37  0.309
1990 Einset EO, Jensen KF, Kuech TF. Analysis of the Physical and Chemical Factors Determining Compositional Variations in the MOCVD Growth of Indium Gallium Arsenide Mrs Proceedings. 204. DOI: 10.1557/Proc-204-207  0.389
1990 Goorsky MS, Kuech TF, Mooney PM, Cardone F, Potemski RM. Growth and Characterization of Highly Oxygen-Doped GaAs Mrs Proceedings. 204: 177. DOI: 10.1557/Proc-204-177  0.37
1990 Kuech TF, Buchan NI, Scilla G, Cardone F, Potemski R. Carbon Incorporation in Metal Organic Vapor Phase Epitaxy Grown Gaas Using ch y X 1-y , TMG, and ASH 3 Mrs Proceedings. 204: 171. DOI: 10.1557/Proc-204-171  0.33
1990 Kuech T, Goorsky M, Palevsky A, Solomon P, Tischler M. Selective Epitaxy of Compound Semiconductors in Movpe Growth: Growth, Modelling, and Applications Mrs Proceedings. 198. DOI: 10.1557/Proc-198-23  0.396
1990 Palevski A, Solomon PM, Kuech TF, Tischler M, Umbach C. Selectively Regrown Contacts to Field-Effect Transistors with Two-Dimensional Electron-Gas Channels Ieee Electron Device Letters. 11: 535-537. DOI: 10.1109/55.63024  0.33
1990 Han CC, Wang XZ, Wang LC, Marshall ED, Lau SS, Schwarz SA, Palmstrøm CJ, Harbison JP, Florez LT, Potemski RM, Tischler MA, Kuech TF. Nonspiking ohmic contact to p-GaAs by solid-phase regrowth Journal of Applied Physics. 68: 5714-5718. DOI: 10.1063/1.346990  0.4
1990 Kuech TF, Collins RT, Smith DL, Mailhiot C. Field-effect transistor structure based on strain-induced polarization charges Journal of Applied Physics. 67: 2650-2652. DOI: 10.1063/1.345474  0.332
1990 Kuech TF, Segmüller A, Kuan TS, Goorsky MS. Growth and properties of thin GaAs epitaxial layers on Al2O 3 Journal of Applied Physics. 67: 6497-6506. DOI: 10.1063/1.345125  0.462
1990 Palevski A, Solomon P, Kuech TF, Tischler MA. Regrown ohmic contacts to thin GaAs layers and two-dimensional electron gas Applied Physics Letters. 56: 171-173. DOI: 10.1063/1.103019  0.386
1990 Wang LC, Wang XZ, Lau SS, Sands T, Chan WK, Kuech TF. Stable and shallow PdIn ohmic contacts ton‐GaAs Applied Physics Letters. 56: 2129-2131. DOI: 10.1063/1.102993  0.394
1990 Lebens JA, Tsai CS, Vahala KJ, Kuech TF. Application of selective epitaxy to fabrication of nanometer scale wire and dot structures Applied Physics Letters. 56: 2642-2644. DOI: 10.1063/1.102862  0.354
1990 Kuech TF, Tischler MA, Buchan NI, Potemski R. Selective epitaxy of MOVPE GaAs using diethyl gallium chloride Journal of Crystal Growth. 99: 324-328. DOI: 10.1016/0022-0248(90)90537-U  0.409
1990 Buchan NI, Kuech TF, Scilla G, Cardone F, Potemski R. Carbon incorporation in metal-organic vapor phase epitaxy grown GaAs from CH x I 4-x , HI, and I 2 Journal of Electronic Materials. 19: 277-281. DOI: 10.1007/Bf02733819  0.379
1989 Smith DL, Collins RT, Kuech TF, Mailhiot C. Field Effect Transistor Structure Based on Strain Induced Polarization Charges Mrs Proceedings. 160. DOI: 10.1557/Proc-160-801  0.322
1989 Goorsky M, Kuech T, Potemski R. Selective Epitaxy of AlxGa1−x as and AlxGal−x as Based Structures Mrs Proceedings. 158. DOI: 10.1557/Proc-158-351  0.422
1989 Tischler MA, Baratte H, Kuech TF, Wang PJ. Electrical characterization of GaAs/Al0.30Ga0.70 As p+-n heterojunctions grown by metalorganic vapor phase epitaxy Journal of Applied Physics. 65: 4928-4935. DOI: 10.1063/1.343209  0.387
1989 Yu LS, Wang LC, Marshall ED, Lau SS, Kuech TF. The temperature dependence of contact resistivity of the Ge/Pd and the Si/Pd nonalloyed contact scheme onn‐GaAs Journal of Applied Physics. 65: 1621-1625. DOI: 10.1063/1.342954  0.307
1989 Tischler MA, Kuech TF, Palevski A, Solomon P. Electrical characteristics of regrown interfaces using diethylgallium chloride-based metalorganic vapor phase epitaxy Applied Physics Letters. 55: 2214-2216. DOI: 10.1063/1.102064  0.353
1989 Yu ML, Memmert U, Kuech TF. Reaction of trimethylgallium in the atomic layer epitaxy of GaAs (100) Applied Physics Letters. 55: 1011-1013. DOI: 10.1063/1.101719  0.404
1989 Marshall ED, Yu LS, Lau SS, Kuech TF, Kavanagh KL. Planar Ge/Pd and alloyed Au‐Ge‐Ni ohmic contacts ton‐AlxGa1−xAs (0≤x≤0.3) Applied Physics Letters. 54: 721-723. DOI: 10.1063/1.100872  0.375
1989 Kuech TF, Tischler MA, Potemski R. Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs Applied Physics Letters. 54: 910-912. DOI: 10.1063/1.100805  0.427
1989 Kuech TF, Tischler MA, Potemski R, Cardone F, Scilla G. Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy Journal of Crystal Growth. 98: 174-187. DOI: 10.1016/0022-0248(89)90197-8  0.397
1988 Tischler MA, Kuech TF. Incorporation and Diffusion of P-Type Dopants for Metal Organic Vapor Phase Epitaxy Mrs Proceedings. 144. DOI: 10.1557/Proc-144-91  0.331
1988 Kuech TF. New Growth Chemistries and Techniques in Metal-Organic Vapor Phase Epitaxy Mrs Proceedings. 144. DOI: 10.1557/Proc-144-41  0.396
1988 Wang LC, Zhang B, Fang F, Marshall ED, Lau SS, Sands T, Kuech TF. An investigation of a nonspiking Ohmic contact to n-GaAs using the Si/Pd system Journal of Materials Research. 3: 922-930. DOI: 10.1557/Jmr.1988.0922  0.357
1988 Wang PJ, Kuech TF, Tischler MA, Mooney P, Scilla G, Cardone F. Deep levels in p‐type GaAs grown by metalorganic vapor phase epitaxy Journal of Applied Physics. 64: 4975-4986. DOI: 10.1063/1.342447  0.424
1988 Kuech TF, Tischler MA, Wang P‐, Scilla G, Potemski R, Cardone F. Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy Applied Physics Letters. 53: 1317-1319. DOI: 10.1063/1.100008  0.331
1988 Pan S, Shen H, Hang Z, Pollak FH, Kuech T, Lee J, Schlesinger T, Shahid M. Photoreflectance, Raman scattering, photoluminescence and transmission electron microscopy of MOCVD multiple quantum wells Superlattices and Microstructures. 4: 609-617. DOI: 10.1016/0749-6036(88)90247-9  0.317
1988 Wolford DJ, Kuech TF, Steiner TW, Bradley JA, Gell MA, Ninno D, Jaros M. Electronic structure of quantum-well states revealed under high pressures Superlattices and Microstructures. 4: 525-535. DOI: 10.1016/0749-6036(88)90231-5  0.346
1988 Steiner TW, Wolford DJ, Kuech TF, Jaros M. Auger decay of X-point excitons in a type II GaAs/AlGaAs superlattice Superlattices and Microstructures. 4: 227-232. DOI: 10.1016/0749-6036(88)90040-7  0.355
1988 Tischler MA, Baratte H, Kuech TF, Wang PJ. The influence of growth conditions on the electrical properties of GaAs/Al0.30Ga0.70As p+/n heterojunctions Journal of Crystal Growth. 93: 631-636. DOI: 10.1016/0022-0248(88)90595-7  0.352
1988 Kuech TF, Wang P-, Tischler MA, Potemski R, Scilla GJ, Cardone F. The control and modeling of doping profiles and transients in MOVPE growth Journal of Crystal Growth. 93: 624-630. DOI: 10.1016/0022-0248(88)90594-5  0.399
1988 K. Moffat H, Kuech TF, F. Jensen K, Wang PJ. Gas phase and surface reactions in Si doping of GaAs by silanes Journal of Crystal Growth. 93: 594-601. DOI: 10.1016/0022-0248(88)90589-1  0.419
1988 Wang PJ, Kuech TF, Tischler MA, Mooney PM, Scilla GJ, Cardone F. Deep levels and minority carrier lifetime in MOVPE p-type GaAs Journal of Crystal Growth. 93: 569-575. DOI: 10.1016/0022-0248(88)90585-4  0.36
1987 Kuech TF, Wolford DJ, Potemski R, Bradley JA, Kelleher KH, Yan D, Farrell JP, Lesser PMS, Pollak FH. Dependence of the AlxGa1-xAs band edge on alloy composition based on the absolute measurement of x Applied Physics Letters. 51: 505-507. DOI: 10.1063/1.98380  0.343
1987 Kuech TF, Wolford DJ, Veuhoff E, Deline V, Mooney PM, Potemski R, Bradley J. Properties of high-purity AlxGa1-xAs grown by the metalorganic vapor-phase-epitaxy technique using methyl precursors Journal of Applied Physics. 62: 632-643. DOI: 10.1063/1.339792  0.437
1987 Marshall ED, Zhang B, Wang LC, Jiao PF, Chen WX, Sawada T, Lau SS, Kavanagh KL, Kuech TF. Nonalloyed ohmic contacts ton‐GaAs by solid‐phase epitaxy of Ge Journal of Applied Physics. 62: 942-947. DOI: 10.1063/1.339705  0.384
1987 Yan D, Farrell JP, Lesser PMS, Pollak FH, Kuech TF, Wolford DJ. Measurement of absolute Al concentration in AlxGa1-xAs Nuclear Inst. and Methods in Physics Research, B. 24: 662-666. DOI: 10.1016/S0168-583X(87)80220-3  0.34
1987 Kuech TF. Metal-organic vapor phase epitaxy of compound semiconductors Materials Science Reports. 2: 1-49. DOI: 10.1016/0920-2307(87)90002-8  0.4
1986 Schlesinger TE, Lee J, Kuech TF. Interdiffusion of Al and Ga in (Al,Ga)As/GaAs Quantum Wells Mrs Proceedings. 77. DOI: 10.1557/Proc-77-241  0.336
1986 Schlesinger TE, Kuech T. Determination of the interdiffusion of Al and Ga in undoped (Al,Ga)As/GaAs quantum wells Applied Physics Letters. 49: 519-521. DOI: 10.1063/1.97107  0.34
1986 Kuech TF, Marshall E, Scilla GJ, Potemski R, Ransom CM, Hung MY. The effect of surface preparation on the production of low interfacial charge regrown interfaces Journal of Crystal Growth. 77: 539-545. DOI: 10.1016/0022-0248(86)90349-0  0.426
1986 Kuech T, Veuhoff E, Kuan T, Deline V, Potemski R. The influence of growth chemistry on the MOVPE growth of GaAs and AlxGa1−xAs layers and heterostructures Journal of Crystal Growth. 77: 257-271. DOI: 10.1016/0022-0248(86)90310-6  0.398
1985 Kuan TS, Kuech TF, Wang WI, Wilkie EL. Long-range order in AlxGa1-xAs. Physical Review Letters. 54: 201-204. PMID 10031439 DOI: 10.1103/Physrevlett.54.201  0.337
1985 Sawada T, Chen WX, Marshall ED, Kavanagh KL, Kuech TF, Pai CS, Lau SS. Non-Alloyed Ohmic Contacts to n-GaAs Using Epitaxial Ge Layers Mrs Proceedings. 54. DOI: 10.1557/Proc-54-409  0.383
1985 Veuhoff E, Kuech TF, Meyerson BS. A Study of silicon incorporation in GaAs MOCVD Layers Journal of the Electrochemical Society. 132: 1958-1961. DOI: 10.1149/1.2114261  0.492
1985 Lau SS, Chen WX, Marshall ED, Pai CS, Tseng WF, Kuech TF. Thermal and chemical stability of Schottky metallization on GaAs Applied Physics Letters. 47: 1298-1300. DOI: 10.1063/1.96311  0.33
1985 Marshall ED, Chen WX, Wu CS, Lau SS, Kuech TF. Non‐alloyed ohmic contact ton‐GaAs by solid phase epitaxy Applied Physics Letters. 47: 298-300. DOI: 10.1063/1.96198  0.383
1985 Kuech TF, Potemski R. Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures Applied Physics Letters. 47: 821-823. DOI: 10.1063/1.95995  0.383
1985 Kuech TF, Potemski R, Chappell TI. Characterization of silicon implanted GaAs buffer layers grown by metalorganic chemical vapor deposition Journal of Applied Physics. 58: 1196-1203. DOI: 10.1063/1.336137  0.339
1984 Kuech TF, Meyerson BS, Veuhoff E. Disilane: A new silicon doping source in metalorganic chemical vapor deposition of GaAs Applied Physics Letters. 44: 986-988. DOI: 10.1063/1.94621  0.457
1984 Kuech TF, Veuhoff E. Mechanism of carbon incorporation in MOCVD GaAs Journal of Crystal Growth. 68: 148-156. DOI: 10.1016/0022-0248(84)90410-X  0.386
1984 Kuech TF, Veuhoff E, Meyerson BS. Silicon doping of GaAs and AlxGa1-xAs using disilane in metalorganic chemical vapor deposition Journal of Crystal Growth. 68: 48-53. DOI: 10.1016/0022-0248(84)90396-8  0.437
1983 Wu CS, Lau SS, Kuech TF, Liu BX. Surface morphology and electronic properties of ErSi2 Thin Solid Films. 104: 175-182. DOI: 10.1557/Proc-18-175  0.402
1982 Collins RT, Kuech TF, McGill TC. A DLTS study of deep levels in n‐type CdTe Journal of Vacuum Science and Technology. 21: 191-194. DOI: 10.1116/1.571710  0.325
1982 Lau SS, Pai CS, Wu CS, Kuech TF, Liu BX. Surface morphology of erbium silicide Applied Physics Letters. 41: 77-80. DOI: 10.1063/1.93295  0.416
1982 Kuech TF, McCaldin JO. HgTe/CdTe heterojunctions: A lattice-matched Schottky barrier structure Journal of Applied Physics. 53: 3121-3128. DOI: 10.1063/1.331008  0.454
1982 Mäenpää M, Kuech TF, Nicolet MA, Lau SS, Sadana DK. The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layers Journal of Applied Physics. 53: 1076-1083. DOI: 10.1063/1.330519  0.43
1982 Kuech TF, McCaldin JO. Behavior of substrate-confined liquids for in situ crystallization of semiconductors Thin Solid Films. 97: 9-16. DOI: 10.1016/0040-6090(82)90412-6  0.311
1981 Kuech TF, McCaldint JO. Low Temperature CVD Growth of Epitaxial HgTe on CdTe Journal of the Electrochemical Society. 128: 1142-1144. DOI: 10.1149/1.2127566  0.413
1981 Kuech TF, Mäenpää M, Lau SS. Epitaxial growth of Ge on 〈100〉 Si by a simple chemical vapor deposition technique Applied Physics Letters. 39: 245-247. DOI: 10.1063/1.92695  0.463
1981 McCaldin JO, Kuech TF. Stability and pinning points in substrate-confined liquids Journal of Applied Physics. 52: 803-807. DOI: 10.1063/1.328766  0.333
1980 Kuech TF, McGaldin JO. COMPOSITIONAL DEPENDENCE OF SCHOTTKY BARRIER HEIGHTS FOR Au ON CHEMICALLY ETCHED In//xGa//1// minus //xP SURFACES Journal of Vacuum Science &Amp; Technology. 17: 891-893. DOI: 10.1116/1.570611  0.401
1980 Kuech TF, McCaldin JO. Confining substrate for micron-thick liquid films Applied Physics Letters. 37: 44-46. DOI: 10.1063/1.91697  0.369
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