Year |
Citation |
Score |
2020 |
Vora S, Rosenbaum E. Analysis of System-Level ESD-Induced Soft Failures in a CMOS Microcontroller Ieee Transactions On Electromagnetic Compatibility. 1-10. DOI: 10.1109/Temc.2020.2986971 |
0.316 |
|
2020 |
Reiman C, Rosenbaum E. Numerical Methods for Event-Detection State Vector Simulation of Switched-Mode Power Supplies Ieee Journal of Emerging and Selected Topics in Power Electronics. 8: 2285-2292. DOI: 10.1109/Jestpe.2019.2946281 |
0.763 |
|
2019 |
Mahapatra S, Chen KJ, Kaczer B, Pancheri L, Rosenbaum E, Mouli C, Wong H, Kerber A, Compagnoni CM, Koval R, Meneghesso G, Sheridan D, Ramey S, Wang R, Stathis J. Special Issue on Reliability Ieee Transactions On Electron Devices. 66: 4497-4503. DOI: 10.1109/Ted.2019.2943987 |
0.418 |
|
2019 |
Xiu Y, Thomson N, Rosenbaum E. Measurement and Simulation of On-Chip Supply Noise Induced by System-Level ESD Ieee Transactions On Device and Materials Reliability. 19: 211-220. DOI: 10.1109/Tdmr.2019.2898819 |
0.811 |
|
2017 |
Thomson NA, Xiu Y, Rosenbaum E. Soft-Failures Induced by System-Level ESD Ieee Transactions On Device and Materials Reliability. 17: 90-98. DOI: 10.1109/Tdmr.2017.2667712 |
0.794 |
|
2017 |
Keel M, Rosenbaum E. ESD Self-Protection of High-Speed Transceivers Using Adaptive Active Bias Conditioning Ieee Transactions On Device and Materials Reliability. 17: 113-120. DOI: 10.1109/Tdmr.2016.2628839 |
0.423 |
|
2016 |
Mertens R, Rosenbaum E. Physical basis for CMOS SCR compact models Ieee Transactions On Electron Devices. 63: 296-302. DOI: 10.1109/Ted.2015.2502951 |
0.804 |
|
2016 |
Keel M, Rosenbaum E. CDM-Reliable T-Coil Techniques for a 25-Gb/s Wireline Receiver Front-End Ieee Transactions On Device and Materials Reliability. 16: 513-520. DOI: 10.1109/Tdmr.2016.2594281 |
0.366 |
|
2016 |
Lin Y, Keel MS, Faust A, Xu A, Shanbhag NR, Rosenbaum E, Singer AC. A Study of BER-Optimal ADC-Based Receiver for Serial Links Ieee Transactions On Circuits and Systems I: Regular Papers. DOI: 10.1109/Tcsi.2016.2529284 |
0.702 |
|
2016 |
Meng K, Shukla V, Rosenbaum E. Full-Component Modeling and Simulation of Charged Device Model ESD Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 35: 1105-1113. DOI: 10.1109/Tcad.2015.2495196 |
0.833 |
|
2016 |
Meng Kh, Chen Z, Rosenbaum E. Compact distributed multi-finger MOSFET model for circuit-level ESD simulation Microelectronics Reliability. 63: 11-21. DOI: 10.1016/J.Microrel.2015.12.010 |
0.666 |
|
2015 |
Shukla V, Rosenbaum E. Charged Device Model Reliability of Three-Dimensional Integrated Circuits Ieee Transactions On Device and Materials Reliability. 15: 559-566. DOI: 10.1109/Tdmr.2015.2491308 |
0.786 |
|
2015 |
Meng KH, Mertens R, Rosenbaum E. Piecewise-linear model with transient relaxation for circuit-level ESD simulation Ieee Transactions On Device and Materials Reliability. 15: 464-466. DOI: 10.1109/Tdmr.2015.2466436 |
0.809 |
|
2015 |
Mertens R, Thomson N, Xiu Y, Rosenbaum E. Analysis of active-clamp response to power-on ESD: Power supply integrity and performance tradeoffs Ieee Transactions On Device and Materials Reliability. 15: 263-271. DOI: 10.1109/Tdmr.2015.2464222 |
0.786 |
|
2015 |
Meng KH, Rosenbaum E. Fast circuit simulator for transient analysis of CDM ESD Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 2015. |
0.313 |
|
2014 |
Shukla V, Boselli G, Dissegna M, Duvvury C, Sankaralingam R, Rosenbaum E. Prediction of charged device model peak discharge current for microelectronic components Ieee Transactions On Device and Materials Reliability. 14: 801-809. DOI: 10.1109/Tdmr.2014.2342241 |
0.759 |
|
2013 |
Jack N, Rosenbaum E. Comparison of FICDM and wafer-level CDM test methods Ieee Transactions On Device and Materials Reliability. 13: 379-387. DOI: 10.1109/Tdmr.2013.2262606 |
0.804 |
|
2013 |
Meng KH, Rosenbaum E. Verification of snapback model by transient I-V measurement for circuit simulation of ESD response Ieee Transactions On Device and Materials Reliability. 13: 371-378. DOI: 10.1109/Tdmr.2013.2258672 |
0.78 |
|
2013 |
Mertens R, Rosenbaum E. A physics-based compact model for SCR devices used in ESD protection circuits Ieee International Reliability Physics Symposium Proceedings. 2B.2.1-2B.2.7. DOI: 10.1109/IRPS.2013.6531947 |
0.377 |
|
2013 |
Mertens R, Rosenbaum E. Separating SCR and trigger circuit related overshoot in SCR-based ESD protection circuits Electrical Overstress/Electrostatic Discharge Symposium Proceedings. |
0.302 |
|
2012 |
Chen W, Rosenbaum E, Ker M. Diode-Triggered Silicon-Controlled Rectifier With Reduced Voltage Overshoot for CDM ESD Protection Ieee Transactions On Device and Materials Reliability. 12: 10-14. DOI: 10.1109/Tdmr.2011.2171487 |
0.431 |
|
2012 |
Jack N, Rosenbaum E. Comparing FICDM and wafer-level CDM test methods: Apples to oranges? Electrical Overstress/Electrostatic Discharge Symposium Proceedings. |
0.308 |
|
2012 |
Meng KH, Rosenbaum E. The need for transient I-V measurement of device ESD response Electrical Overstress/Electrostatic Discharge Symposium Proceedings. |
0.371 |
|
2011 |
Jack N, Shukla V, Rosenbaum E. Comparison of Wafer-Level With Package-Level CDM Stress Facilitated by Real-Time Probing Ieee Transactions On Device and Materials Reliability. 11: 522-530. DOI: 10.1109/Tdmr.2011.2166399 |
0.785 |
|
2011 |
Farbiz F, Rosenbaum E. Modeling and understanding of external latchup in CMOS technologies-part II: Minority carrier collection efficiency Ieee Transactions On Device and Materials Reliability. 11: 426-432. DOI: 10.1109/Tdmr.2011.2159505 |
0.699 |
|
2011 |
Farbiz F, Rosenbaum E. Modeling and understanding of external latchup in CMOS technologies-part I: Modeling latchup trigger current Ieee Transactions On Device and Materials Reliability. 11: 417-425. DOI: 10.1109/Tdmr.2011.2159504 |
0.699 |
|
2011 |
Jack N, Rosenbaum E. Voltage monitor circuit for ESD diagnosis Electrical Overstress/Electrostatic Discharge Symposium Proceedings. |
0.314 |
|
2010 |
Farbiz F, Rosenbaum E. Understanding transient latchup hazards and the impact of guard rings Ieee International Reliability Physics Symposium Proceedings. 466-473. DOI: 10.1109/IRPS.2010.5488787 |
0.636 |
|
2010 |
Jack N, Rosenbaum E. ESD protection for high-speed receiver circuits Ieee International Reliability Physics Symposium Proceedings. 835-840. DOI: 10.1109/IRPS.2010.5488722 |
0.361 |
|
2010 |
Shukla V, Rosenbaum E. CDM simulation study of a system-in-package Electrical Overstress/Electrostatic Discharge Symposium Proceedings. |
0.393 |
|
2009 |
Bhatia K, Jack N, Rosenbaum E. Layout Optimization of ESD Protection Diodes for High-Frequency I/Os Ieee Transactions On Device and Materials Reliability. 9: 465-475. DOI: 10.1109/Tdmr.2009.2025956 |
0.757 |
|
2009 |
Di Sarro JP, Rosenbaum E. Oscillatory transmission line pulsing for characterization of device transient response Ieee Electron Device Letters. 30: 168-170. DOI: 10.1109/Led.2008.2009361 |
0.79 |
|
2009 |
Farbiz F, Rosenbaum E. A new compact model for external latchup Microelectronics Reliability. 49: 1447-1454. DOI: 10.1016/J.Microrel.2008.12.003 |
0.671 |
|
2008 |
Di Sarro J, Rosenbaum E. A scalable SCR compact model for ESD circuit simulation Ieee International Reliability Physics Symposium Proceedings. 254-261. DOI: 10.1109/Ted.2010.2081674 |
0.495 |
|
2008 |
Farbiz F, Rosenbaum E. Modeling of majority and minority carrier triggered external latchup Ieee International Reliability Physics Symposium Proceedings. 270-277. DOI: 10.1109/RELPHY.2008.4558897 |
0.677 |
|
2008 |
Farbiz F, Rosenbaum E. Guard ring interactions and their effect on CMOS latchup resilience Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796690 |
0.617 |
|
2008 |
Lee J, Rosenbaum E. Voltage clamping requirements for ESD protection of inputs in 90nm CMOS technology Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 50-58. |
0.332 |
|
2007 |
Farbiz F, Rosenbaum E. An investigation of external latchup Annual Proceedings - Reliability Physics (Symposium). 600-601. DOI: 10.1109/RELPHY.2007.369970 |
0.551 |
|
2007 |
Bhatia K, Hyvonen S, Rosenbaum E. A Compact, ESD-Protected, SiGe BiCMOS LNA for Ultra-Wideband Applications Ieee Journal of Solid-State Circuits. 42: 1121-1130. DOI: 10.1109/Jssc.2007.894826 |
0.761 |
|
2007 |
Farbiz F, Rosenbaum E. Analytical modeling of external latchup Electrical Overstress/Electrostatic Discharge Symposium Proceedings. DOI: 10.1109/EOSESD.2007.4401772 |
0.646 |
|
2006 |
Li J, Joshi S, Barnes R, Rosenbaum E. Compact modeling of on-chip ESD protection devices using Verilog-A Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 25: 1047-1063. DOI: 10.1109/Tcad.2005.855948 |
0.762 |
|
2006 |
Li H, Zemke CE, Manetas G, Okhmatovski VI, Rosenbaum E. An automated and efficient substrate noise analysis tool Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 25: 454-468. DOI: 10.1109/Tcad.2005.854628 |
0.379 |
|
2005 |
Joshi S, Hyvonen S, Rosenbaum E. High-Q electrostatic discharge (ESD) protection devices for use at radio frequency (RF) and broad-band I/O pins Ieee Transactions On Electron Devices. 52: 1484-1488. DOI: 10.1109/Ted.2005.850688 |
0.789 |
|
2005 |
Li J, Li H, Barnes R, Rosenbaum E. Comprehensive study of drain breakdown in MOSFETs Ieee Transactions On Electron Devices. 52: 1180-1186. DOI: 10.1109/Ted.2005.848858 |
0.542 |
|
2005 |
Joshi S, Ida R, Rosenbaum E. Erratum: Design and optimization of vertical SiGe thyristors for On-Chip BSD protection (IEEE Transactions on Device and Materials Reliability (December 2004)) Ieee Transactions On Device and Materials Reliability. 5. DOI: 10.1109/Tdmr.2005.849957 |
0.663 |
|
2005 |
Rosenbaum E, Hyvonen S. On-Chip ESD protection for RF I/Os: Devices, circuits and models Proceedings - Ieee International Symposium On Circuits and Systems. 1202-1205. DOI: 10.1109/ISCAS.2005.1464809 |
0.4 |
|
2005 |
Hyvonen S, Joshi S, Rosenbaum E. Comprehensive ESD protection for RF inputs Microelectronics Reliability. 45: 245-254. DOI: 10.1016/J.Microrel.2004.05.012 |
0.808 |
|
2005 |
Hyvonen S, Rosenbaum E. Diode-based tuned ESD protection for 5.25-GHz CMOS LNAs Electrical Overstress/Electrostatic Discharge Symposium Proceedings. |
0.325 |
|
2004 |
Kanj R, Rosenbaum E. Critical evaluation of SOI design guidelines Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 12: 885-894. DOI: 10.1109/Tvlsi.2004.833665 |
0.694 |
|
2004 |
Wu J, Rosenbaum E. Gate oxide reliability under ESD-like pulse stress Ieee Transactions On Electron Devices. 51: 1528-1532. DOI: 10.1109/Ted.2004.829894 |
0.336 |
|
2004 |
Joshi S, Ida R, Rosenbaum E. Design and optimization of vertical SiGe thyristors for on-chip ESD protection Ieee Transactions On Device and Materials Reliability. 4: 586-593. DOI: 10.1109/Tdmr.2004.838423 |
0.647 |
|
2003 |
Joshi S, Rosenbaum E. ESD protection for broadband ICs (DC-20 GHz and beyond) Electronics Letters. 39: 906-908. DOI: 10.1049/El:20030597 |
0.665 |
|
2003 |
Hyvonen S, Joshi S, Rosenbaum E. Cancellation technique to provide ESD protection for multi-GHz RF inputs Electronics Letters. 39: 284-286. DOI: 10.1049/El:20030221 |
0.786 |
|
2003 |
Joshi S, Rosenbaum E. Simulator-independent compact modeling of vertical npn transistors for ESD and RF circuit simulation Microelectronics Reliability. 43: 1021-1027. DOI: 10.1016/S0026-2714(03)00130-6 |
0.724 |
|
2002 |
Joshi S, Rosenbaum E. Compact modeling of vertical ESD protection NPN transistors for RF circuits Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 2002: 292-298. |
0.444 |
|
2002 |
Kanj R, Rosenbaum E. A critical look at design guidelines for SOI logic gates Proceedings - Ieee International Symposium On Circuits and Systems. 3. |
0.635 |
|
2001 |
Juliano PA, Rosenbaum E. Accurate wafer-level measurement of BSD protection device turn-on using a modified very fast transmission-line pulse system Ieee Transactions On Device and Materials Reliability. 1: 95-103. DOI: 10.1109/7298.956702 |
0.814 |
|
2001 |
Li E, Rosenbaum E, Tao J, Fang P. Projecting lifetime of deep submicron MOSFETs Ieee Transactions On Electron Devices. 48: 671-678. DOI: 10.1109/16.915682 |
0.349 |
|
2001 |
Wang Y, Juliano P, Joshi S, Rosenbaum E. Electrothermal model for simulation of bulk-Si and SOI diodes in ESD protection circuits Microelectronics Reliability. 41: 1781-1787. DOI: 10.1016/S0026-2714(01)00034-8 |
0.796 |
|
2001 |
Rosenbaum E, Wu J. Trap generation and breakdown processes in very thin gate oxides Microelectronics and Reliability. 41: 625-632. DOI: 10.1016/S0026-2714(01)00026-9 |
0.339 |
|
2001 |
Juliano PA, Rosenbaum E. A novel SCR macromodel for ESD circuit simulation Technical Digest - International Electron Devices Meeting. 319-322. |
0.824 |
|
2001 |
Kanj R, Rosenbaum E. Multiple Output Domino Logic (MODL) in SOI Ieee International Soi Conference. 59-60. |
0.626 |
|
2000 |
Chen D, Li E, Rosenbaum E, Kang S. Interconnect thermal modeling for accurate simulation of circuit timing and reliability Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 19: 197-205. DOI: 10.1109/43.828548 |
0.356 |
|
2000 |
Wu J, Juliano P, Rosenbaum E. Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 287-295. DOI: 10.1016/S0026-2714(01)00033-6 |
0.779 |
|
1999 |
Raha P, Diaz C, Rosenbaum E, Cao M, VandeVoorde P, Greene W. EOS/ESD reliability of partially depleted SOI technology Ieee Transactions On Electron Devices. 46: 429-431. DOI: 10.1109/16.740912 |
0.425 |
|
1999 |
Register LF, Rosenbaum E, Yang K. Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices Applied Physics Letters. 74: 457-459. DOI: 10.1063/1.123060 |
0.621 |
|
1998 |
Cheng Y, Raha P, Teng C, Rosenbaum E, Kang S. ILLIADS-T: an electrothermal timing simulator for temperature-sensitive reliability diagnosis of CMOS VLSI chips Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 17: 668-681. DOI: 10.1109/43.712099 |
0.416 |
|
1998 |
Raha P, Smith JC, Miller JW, Rosenbaum E. ESD robustness prediction and protection device design in partially depleted SOI technology Microelectronics Reliability. 38: 1723-1731. DOI: 10.1016/S0026-2714(98)00175-9 |
0.466 |
|
1997 |
Raha P, Miller JW, Rosenbaum E. Time-dependent snapback in thin-film SOI MOSFET's Ieee Electron Device Letters. 18: 509-511. DOI: 10.1109/55.641428 |
0.411 |
|
1997 |
Teng C, Cheng Y, Rosenbaum E, Kang S. iTEM: a temperature-dependent electromigration reliability diagnosis tool Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 16: 882-893. DOI: 10.1109/43.644613 |
0.319 |
|
1997 |
Rosenbaum E, Register LF. Mechanism of stress-induced leakage current in MOS capacitors Ieee Transactions On Electron Devices. 44: 317-323. DOI: 10.1109/16.557724 |
0.371 |
|
1997 |
Raha P, Ramaswamy S, Rosenbaum E. Heat flow analysis for EOS/ESD protection device design in SOI technology Ieee Transactions On Electron Devices. 44: 464-471. DOI: 10.1109/16.556157 |
0.373 |
|
1996 |
Rosenbaum E, King JC, Hu C. Accelerated testing of SiO/sub 2/ reliability Ieee Transactions On Electron Devices. 43: 70-80. DOI: 10.1109/16.477595 |
0.511 |
|
1995 |
Rosenbaum E, Kuusinen SB, Ko PK, Minami ER, Hu C. Circuit-Level Simulation of TDDB Failure in Digital CMOS Circuits Ieee Transactions On Semiconductor Manufacturing. 8: 370-374. DOI: 10.1109/66.401018 |
0.578 |
|
1993 |
Tu RH, Rosenbaum E, Chan WY, Li CC, Minami E, Quader K, Keung Ko P, Hu C. Berkeley Reliability Tools-BERT Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 12: 1524-1534. DOI: 10.1109/43.256927 |
0.571 |
|
1993 |
Rosenbaum E, Liu Z, Hu C. Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions Ieee Transactions On Electron Devices. 40: 2287-2295. DOI: 10.1109/16.249477 |
0.464 |
|
1993 |
Quader KN, Li CC, Tu R, Rosenbaum E, Ko PK, Hu C. A Bidirectional NMOSFET Current Reduction Model for Simulation of Hot-Carrier-Induced Circuit Degradation Ieee Transactions On Electron Devices. 40: 2245-2254. DOI: 10.1109/16.249472 |
0.586 |
|
1991 |
Rosenbaum E, Hu C. High-Frequency Time-Dependent Breakdown of SiO<inf>2</inf> Ieee Electron Device Letters. 12: 267-269. DOI: 10.1109/55.82056 |
0.476 |
|
1991 |
Rosenbaum E, Rofan R, Hu C. Effect of hot-carrier injection on n- and pMOSFET gate oxide integrity Ieee Electron Device Letters. 12: 599-601. DOI: 10.1109/55.119210 |
0.324 |
|
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