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Elyse Rosenbaum - Publications

Affiliations: 
Electrical and Computer Engineering University of Illinois, Urbana-Champaign, Urbana-Champaign, IL 
Area:
Electronics and Electrical Engineering
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79 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Vora S, Rosenbaum E. Analysis of System-Level ESD-Induced Soft Failures in a CMOS Microcontroller Ieee Transactions On Electromagnetic Compatibility. 1-10. DOI: 10.1109/Temc.2020.2986971  0.316
2020 Reiman C, Rosenbaum E. Numerical Methods for Event-Detection State Vector Simulation of Switched-Mode Power Supplies Ieee Journal of Emerging and Selected Topics in Power Electronics. 8: 2285-2292. DOI: 10.1109/Jestpe.2019.2946281  0.763
2019 Mahapatra S, Chen KJ, Kaczer B, Pancheri L, Rosenbaum E, Mouli C, Wong H, Kerber A, Compagnoni CM, Koval R, Meneghesso G, Sheridan D, Ramey S, Wang R, Stathis J. Special Issue on Reliability Ieee Transactions On Electron Devices. 66: 4497-4503. DOI: 10.1109/Ted.2019.2943987  0.418
2019 Xiu Y, Thomson N, Rosenbaum E. Measurement and Simulation of On-Chip Supply Noise Induced by System-Level ESD Ieee Transactions On Device and Materials Reliability. 19: 211-220. DOI: 10.1109/Tdmr.2019.2898819  0.811
2017 Thomson NA, Xiu Y, Rosenbaum E. Soft-Failures Induced by System-Level ESD Ieee Transactions On Device and Materials Reliability. 17: 90-98. DOI: 10.1109/Tdmr.2017.2667712  0.794
2017 Keel M, Rosenbaum E. ESD Self-Protection of High-Speed Transceivers Using Adaptive Active Bias Conditioning Ieee Transactions On Device and Materials Reliability. 17: 113-120. DOI: 10.1109/Tdmr.2016.2628839  0.423
2016 Mertens R, Rosenbaum E. Physical basis for CMOS SCR compact models Ieee Transactions On Electron Devices. 63: 296-302. DOI: 10.1109/Ted.2015.2502951  0.804
2016 Keel M, Rosenbaum E. CDM-Reliable T-Coil Techniques for a 25-Gb/s Wireline Receiver Front-End Ieee Transactions On Device and Materials Reliability. 16: 513-520. DOI: 10.1109/Tdmr.2016.2594281  0.366
2016 Lin Y, Keel MS, Faust A, Xu A, Shanbhag NR, Rosenbaum E, Singer AC. A Study of BER-Optimal ADC-Based Receiver for Serial Links Ieee Transactions On Circuits and Systems I: Regular Papers. DOI: 10.1109/Tcsi.2016.2529284  0.702
2016 Meng K, Shukla V, Rosenbaum E. Full-Component Modeling and Simulation of Charged Device Model ESD Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 35: 1105-1113. DOI: 10.1109/Tcad.2015.2495196  0.833
2016 Meng Kh, Chen Z, Rosenbaum E. Compact distributed multi-finger MOSFET model for circuit-level ESD simulation Microelectronics Reliability. 63: 11-21. DOI: 10.1016/J.Microrel.2015.12.010  0.666
2015 Shukla V, Rosenbaum E. Charged Device Model Reliability of Three-Dimensional Integrated Circuits Ieee Transactions On Device and Materials Reliability. 15: 559-566. DOI: 10.1109/Tdmr.2015.2491308  0.786
2015 Meng KH, Mertens R, Rosenbaum E. Piecewise-linear model with transient relaxation for circuit-level ESD simulation Ieee Transactions On Device and Materials Reliability. 15: 464-466. DOI: 10.1109/Tdmr.2015.2466436  0.809
2015 Mertens R, Thomson N, Xiu Y, Rosenbaum E. Analysis of active-clamp response to power-on ESD: Power supply integrity and performance tradeoffs Ieee Transactions On Device and Materials Reliability. 15: 263-271. DOI: 10.1109/Tdmr.2015.2464222  0.786
2015 Meng KH, Rosenbaum E. Fast circuit simulator for transient analysis of CDM ESD Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 2015.  0.313
2014 Shukla V, Boselli G, Dissegna M, Duvvury C, Sankaralingam R, Rosenbaum E. Prediction of charged device model peak discharge current for microelectronic components Ieee Transactions On Device and Materials Reliability. 14: 801-809. DOI: 10.1109/Tdmr.2014.2342241  0.759
2013 Jack N, Rosenbaum E. Comparison of FICDM and wafer-level CDM test methods Ieee Transactions On Device and Materials Reliability. 13: 379-387. DOI: 10.1109/Tdmr.2013.2262606  0.804
2013 Meng KH, Rosenbaum E. Verification of snapback model by transient I-V measurement for circuit simulation of ESD response Ieee Transactions On Device and Materials Reliability. 13: 371-378. DOI: 10.1109/Tdmr.2013.2258672  0.78
2013 Mertens R, Rosenbaum E. A physics-based compact model for SCR devices used in ESD protection circuits Ieee International Reliability Physics Symposium Proceedings. 2B.2.1-2B.2.7. DOI: 10.1109/IRPS.2013.6531947  0.377
2013 Mertens R, Rosenbaum E. Separating SCR and trigger circuit related overshoot in SCR-based ESD protection circuits Electrical Overstress/Electrostatic Discharge Symposium Proceedings.  0.302
2012 Chen W, Rosenbaum E, Ker M. Diode-Triggered Silicon-Controlled Rectifier With Reduced Voltage Overshoot for CDM ESD Protection Ieee Transactions On Device and Materials Reliability. 12: 10-14. DOI: 10.1109/Tdmr.2011.2171487  0.431
2012 Jack N, Rosenbaum E. Comparing FICDM and wafer-level CDM test methods: Apples to oranges? Electrical Overstress/Electrostatic Discharge Symposium Proceedings.  0.308
2012 Meng KH, Rosenbaum E. The need for transient I-V measurement of device ESD response Electrical Overstress/Electrostatic Discharge Symposium Proceedings.  0.371
2011 Jack N, Shukla V, Rosenbaum E. Comparison of Wafer-Level With Package-Level CDM Stress Facilitated by Real-Time Probing Ieee Transactions On Device and Materials Reliability. 11: 522-530. DOI: 10.1109/Tdmr.2011.2166399  0.785
2011 Farbiz F, Rosenbaum E. Modeling and understanding of external latchup in CMOS technologies-part II: Minority carrier collection efficiency Ieee Transactions On Device and Materials Reliability. 11: 426-432. DOI: 10.1109/Tdmr.2011.2159505  0.699
2011 Farbiz F, Rosenbaum E. Modeling and understanding of external latchup in CMOS technologies-part I: Modeling latchup trigger current Ieee Transactions On Device and Materials Reliability. 11: 417-425. DOI: 10.1109/Tdmr.2011.2159504  0.699
2011 Jack N, Rosenbaum E. Voltage monitor circuit for ESD diagnosis Electrical Overstress/Electrostatic Discharge Symposium Proceedings.  0.314
2010 Farbiz F, Rosenbaum E. Understanding transient latchup hazards and the impact of guard rings Ieee International Reliability Physics Symposium Proceedings. 466-473. DOI: 10.1109/IRPS.2010.5488787  0.636
2010 Jack N, Rosenbaum E. ESD protection for high-speed receiver circuits Ieee International Reliability Physics Symposium Proceedings. 835-840. DOI: 10.1109/IRPS.2010.5488722  0.361
2010 Shukla V, Rosenbaum E. CDM simulation study of a system-in-package Electrical Overstress/Electrostatic Discharge Symposium Proceedings.  0.393
2009 Bhatia K, Jack N, Rosenbaum E. Layout Optimization of ESD Protection Diodes for High-Frequency I/Os Ieee Transactions On Device and Materials Reliability. 9: 465-475. DOI: 10.1109/Tdmr.2009.2025956  0.757
2009 Di Sarro JP, Rosenbaum E. Oscillatory transmission line pulsing for characterization of device transient response Ieee Electron Device Letters. 30: 168-170. DOI: 10.1109/Led.2008.2009361  0.79
2009 Farbiz F, Rosenbaum E. A new compact model for external latchup Microelectronics Reliability. 49: 1447-1454. DOI: 10.1016/J.Microrel.2008.12.003  0.671
2008 Di Sarro J, Rosenbaum E. A scalable SCR compact model for ESD circuit simulation Ieee International Reliability Physics Symposium Proceedings. 254-261. DOI: 10.1109/Ted.2010.2081674  0.495
2008 Farbiz F, Rosenbaum E. Modeling of majority and minority carrier triggered external latchup Ieee International Reliability Physics Symposium Proceedings. 270-277. DOI: 10.1109/RELPHY.2008.4558897  0.677
2008 Farbiz F, Rosenbaum E. Guard ring interactions and their effect on CMOS latchup resilience Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2008.4796690  0.617
2008 Lee J, Rosenbaum E. Voltage clamping requirements for ESD protection of inputs in 90nm CMOS technology Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 50-58.  0.332
2007 Farbiz F, Rosenbaum E. An investigation of external latchup Annual Proceedings - Reliability Physics (Symposium). 600-601. DOI: 10.1109/RELPHY.2007.369970  0.551
2007 Bhatia K, Hyvonen S, Rosenbaum E. A Compact, ESD-Protected, SiGe BiCMOS LNA for Ultra-Wideband Applications Ieee Journal of Solid-State Circuits. 42: 1121-1130. DOI: 10.1109/Jssc.2007.894826  0.761
2007 Farbiz F, Rosenbaum E. Analytical modeling of external latchup Electrical Overstress/Electrostatic Discharge Symposium Proceedings. DOI: 10.1109/EOSESD.2007.4401772  0.646
2006 Li J, Joshi S, Barnes R, Rosenbaum E. Compact modeling of on-chip ESD protection devices using Verilog-A Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 25: 1047-1063. DOI: 10.1109/Tcad.2005.855948  0.762
2006 Li H, Zemke CE, Manetas G, Okhmatovski VI, Rosenbaum E. An automated and efficient substrate noise analysis tool Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 25: 454-468. DOI: 10.1109/Tcad.2005.854628  0.379
2005 Joshi S, Hyvonen S, Rosenbaum E. High-Q electrostatic discharge (ESD) protection devices for use at radio frequency (RF) and broad-band I/O pins Ieee Transactions On Electron Devices. 52: 1484-1488. DOI: 10.1109/Ted.2005.850688  0.789
2005 Li J, Li H, Barnes R, Rosenbaum E. Comprehensive study of drain breakdown in MOSFETs Ieee Transactions On Electron Devices. 52: 1180-1186. DOI: 10.1109/Ted.2005.848858  0.542
2005 Joshi S, Ida R, Rosenbaum E. Erratum: Design and optimization of vertical SiGe thyristors for On-Chip BSD protection (IEEE Transactions on Device and Materials Reliability (December 2004)) Ieee Transactions On Device and Materials Reliability. 5. DOI: 10.1109/Tdmr.2005.849957  0.663
2005 Rosenbaum E, Hyvonen S. On-Chip ESD protection for RF I/Os: Devices, circuits and models Proceedings - Ieee International Symposium On Circuits and Systems. 1202-1205. DOI: 10.1109/ISCAS.2005.1464809  0.4
2005 Hyvonen S, Joshi S, Rosenbaum E. Comprehensive ESD protection for RF inputs Microelectronics Reliability. 45: 245-254. DOI: 10.1016/J.Microrel.2004.05.012  0.808
2005 Hyvonen S, Rosenbaum E. Diode-based tuned ESD protection for 5.25-GHz CMOS LNAs Electrical Overstress/Electrostatic Discharge Symposium Proceedings.  0.325
2004 Kanj R, Rosenbaum E. Critical evaluation of SOI design guidelines Ieee Transactions On Very Large Scale Integration (Vlsi) Systems. 12: 885-894. DOI: 10.1109/Tvlsi.2004.833665  0.694
2004 Wu J, Rosenbaum E. Gate oxide reliability under ESD-like pulse stress Ieee Transactions On Electron Devices. 51: 1528-1532. DOI: 10.1109/Ted.2004.829894  0.336
2004 Joshi S, Ida R, Rosenbaum E. Design and optimization of vertical SiGe thyristors for on-chip ESD protection Ieee Transactions On Device and Materials Reliability. 4: 586-593. DOI: 10.1109/Tdmr.2004.838423  0.647
2003 Joshi S, Rosenbaum E. ESD protection for broadband ICs (DC-20 GHz and beyond) Electronics Letters. 39: 906-908. DOI: 10.1049/El:20030597  0.665
2003 Hyvonen S, Joshi S, Rosenbaum E. Cancellation technique to provide ESD protection for multi-GHz RF inputs Electronics Letters. 39: 284-286. DOI: 10.1049/El:20030221  0.786
2003 Joshi S, Rosenbaum E. Simulator-independent compact modeling of vertical npn transistors for ESD and RF circuit simulation Microelectronics Reliability. 43: 1021-1027. DOI: 10.1016/S0026-2714(03)00130-6  0.724
2002 Joshi S, Rosenbaum E. Compact modeling of vertical ESD protection NPN transistors for RF circuits Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 2002: 292-298.  0.444
2002 Kanj R, Rosenbaum E. A critical look at design guidelines for SOI logic gates Proceedings - Ieee International Symposium On Circuits and Systems. 3.  0.635
2001 Juliano PA, Rosenbaum E. Accurate wafer-level measurement of BSD protection device turn-on using a modified very fast transmission-line pulse system Ieee Transactions On Device and Materials Reliability. 1: 95-103. DOI: 10.1109/7298.956702  0.814
2001 Li E, Rosenbaum E, Tao J, Fang P. Projecting lifetime of deep submicron MOSFETs Ieee Transactions On Electron Devices. 48: 671-678. DOI: 10.1109/16.915682  0.349
2001 Wang Y, Juliano P, Joshi S, Rosenbaum E. Electrothermal model for simulation of bulk-Si and SOI diodes in ESD protection circuits Microelectronics Reliability. 41: 1781-1787. DOI: 10.1016/S0026-2714(01)00034-8  0.796
2001 Rosenbaum E, Wu J. Trap generation and breakdown processes in very thin gate oxides Microelectronics and Reliability. 41: 625-632. DOI: 10.1016/S0026-2714(01)00026-9  0.339
2001 Juliano PA, Rosenbaum E. A novel SCR macromodel for ESD circuit simulation Technical Digest - International Electron Devices Meeting. 319-322.  0.824
2001 Kanj R, Rosenbaum E. Multiple Output Domino Logic (MODL) in SOI Ieee International Soi Conference. 59-60.  0.626
2000 Chen D, Li E, Rosenbaum E, Kang S. Interconnect thermal modeling for accurate simulation of circuit timing and reliability Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 19: 197-205. DOI: 10.1109/43.828548  0.356
2000 Wu J, Juliano P, Rosenbaum E. Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions Electrical Overstress/Electrostatic Discharge Symposium Proceedings. 287-295. DOI: 10.1016/S0026-2714(01)00033-6  0.779
1999 Raha P, Diaz C, Rosenbaum E, Cao M, VandeVoorde P, Greene W. EOS/ESD reliability of partially depleted SOI technology Ieee Transactions On Electron Devices. 46: 429-431. DOI: 10.1109/16.740912  0.425
1999 Register LF, Rosenbaum E, Yang K. Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices Applied Physics Letters. 74: 457-459. DOI: 10.1063/1.123060  0.621
1998 Cheng Y, Raha P, Teng C, Rosenbaum E, Kang S. ILLIADS-T: an electrothermal timing simulator for temperature-sensitive reliability diagnosis of CMOS VLSI chips Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 17: 668-681. DOI: 10.1109/43.712099  0.416
1998 Raha P, Smith JC, Miller JW, Rosenbaum E. ESD robustness prediction and protection device design in partially depleted SOI technology Microelectronics Reliability. 38: 1723-1731. DOI: 10.1016/S0026-2714(98)00175-9  0.466
1997 Raha P, Miller JW, Rosenbaum E. Time-dependent snapback in thin-film SOI MOSFET's Ieee Electron Device Letters. 18: 509-511. DOI: 10.1109/55.641428  0.411
1997 Teng C, Cheng Y, Rosenbaum E, Kang S. iTEM: a temperature-dependent electromigration reliability diagnosis tool Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 16: 882-893. DOI: 10.1109/43.644613  0.319
1997 Rosenbaum E, Register LF. Mechanism of stress-induced leakage current in MOS capacitors Ieee Transactions On Electron Devices. 44: 317-323. DOI: 10.1109/16.557724  0.371
1997 Raha P, Ramaswamy S, Rosenbaum E. Heat flow analysis for EOS/ESD protection device design in SOI technology Ieee Transactions On Electron Devices. 44: 464-471. DOI: 10.1109/16.556157  0.373
1996 Rosenbaum E, King JC, Hu C. Accelerated testing of SiO/sub 2/ reliability Ieee Transactions On Electron Devices. 43: 70-80. DOI: 10.1109/16.477595  0.511
1995 Rosenbaum E, Kuusinen SB, Ko PK, Minami ER, Hu C. Circuit-Level Simulation of TDDB Failure in Digital CMOS Circuits Ieee Transactions On Semiconductor Manufacturing. 8: 370-374. DOI: 10.1109/66.401018  0.578
1993 Tu RH, Rosenbaum E, Chan WY, Li CC, Minami E, Quader K, Keung Ko P, Hu C. Berkeley Reliability Tools-BERT Ieee Transactions On Computer-Aided Design of Integrated Circuits and Systems. 12: 1524-1534. DOI: 10.1109/43.256927  0.571
1993 Rosenbaum E, Liu Z, Hu C. Silicon dioxide breakdown lifetime enhancement under bipolar bias conditions Ieee Transactions On Electron Devices. 40: 2287-2295. DOI: 10.1109/16.249477  0.464
1993 Quader KN, Li CC, Tu R, Rosenbaum E, Ko PK, Hu C. A Bidirectional NMOSFET Current Reduction Model for Simulation of Hot-Carrier-Induced Circuit Degradation Ieee Transactions On Electron Devices. 40: 2245-2254. DOI: 10.1109/16.249472  0.586
1991 Rosenbaum E, Hu C. High-Frequency Time-Dependent Breakdown of SiO<inf>2</inf> Ieee Electron Device Letters. 12: 267-269. DOI: 10.1109/55.82056  0.476
1991 Rosenbaum E, Rofan R, Hu C. Effect of hot-carrier injection on n- and pMOSFET gate oxide integrity Ieee Electron Device Letters. 12: 599-601. DOI: 10.1109/55.119210  0.324
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