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Yongkook Park, Ph.D. - Publications

Affiliations: 
2009 North Carolina State University, Raleigh, NC 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
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11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Park Y, Park HY, Kang DH, Kim GS, Lim D, Yu H, Choi C, Park JH. The effect of post-fabrication annealing on an amorphous IGZO visible-light photodetector Journal of Nanoscience and Nanotechnology. 16: 11745-11749. DOI: 10.1166/Jnn.2016.13586  0.301
2016 Shim J, Yoo G, Kang DH, Jung WS, Byun YC, Kim H, Kang WT, Yu WJ, Yu HY, Park Y, Park JH. Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions Ieee Electron Device Letters. 37: 4-7. DOI: 10.1109/Led.2015.2497714  0.334
2015 Park Y, Lu J, Park J, Rozgonyi G. The Influence of Hydrogenation on the Electrical Properties of Impurity-Contaminated Silicon Grain Boundaries Electronic Materials Letters. 11: 993-997. DOI: 10.1007/S13391-015-5214-7  0.666
2015 Park Y, Lu J, Park JH, Rozgonyi G. Impact of structural defect density on gettering of transition metal impurities during phosphorus emitter diffusion in multi-crystalline silicon solar cell processing Electronic Materials Letters. 11: 658-663. DOI: 10.1007/S13391-015-5173-Z  0.652
2010 Park Y, Lu J, Rozgonyi G. Segregation and thermal dissociation of hydrogen at the (110)/(001) silicon grain boundary Electronic Materials Letters. 6: 1-5. DOI: 10.3365/Eml.2010.03.001  0.611
2009 Lu J, Yu X, Park Y, Rozgonyi G. Investigation of iron impurity gettering at dislocations in a SiGe/Si heterostructure Journal of Applied Physics. 105: 73712. DOI: 10.1063/1.3093912  0.617
2009 Park Y, Lu J, Rozgonyi G. Hydrogen passivation of deep energy levels at the interfacial grain boundary in (110)/(100) bonded silicon wafers Journal of Applied Physics. 105: 14912. DOI: 10.1063/1.3063806  0.641
2008 Lu J, Park Y, Rozgonyi GA. Deep level transient spectroscopy and capacitance-voltage study of dislocations and associated defects in SiGeSi heterostructures Journal of Applied Physics. 103. DOI: 10.1063/1.2903154  0.635
2007 Stoddard N, Wu B, Witting I, Wagener MC, Park Y, Rozgonyi GA, Clark R. Casting Single Crystal Silicon: Novel Defect Profiles from BP Solar's Mono2 TM Wafers Solid State Phenomena. 1-8. DOI: 10.4028/Www.Scientific.Net/Ssp.131-133.1  0.548
2007 Park Y, Lu J, Rozgonyi GA. Gettering effect in low and high density structural defect regions of the cast multi-crystalline-silicon wafer Materials Research Society Symposium Proceedings. 994: 289-294. DOI: 10.1557/Proc-0994-F11-21  0.642
2007 Lu J, Park Y, Rozgonyi GA. Deep level transient spectroscopy study of dislocations in SiGe/Si heterostructures Materials Research Society Symposium Proceedings. 994: 251-256. DOI: 10.1557/Proc-0994-F09-04  0.634
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