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Qingqing Liang, Ph.D. - Publications

Affiliations: 
2004 Georgia Institute of Technology, Atlanta, GA 
Area:
Electronics and Electrical Engineering
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18 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2009 Madan A, Verma R, Arora R, Wilcox EP, Cressler JD, Marshall PW, Schrimpf RD, Cheng PF, Del Castillo LY, Liang Q, Freeman G. The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of 65 nm RF-CMOS on SOI Ieee Transactions On Nuclear Science. 56: 3256-3261. DOI: 10.1109/Tns.2009.2033998  0.539
2009 Madan A, Phillips SD, Cressler JD, Marshall PW, Liang Q, Freeman G. Impact of Proton Irradiation on the RF Performance of 65 nm SOI CMOS Technology Ieee Transactions On Nuclear Science. 56: 1914-1919. DOI: 10.1109/TNS.2009.2014064  0.429
2008 Madan A, Phillips SD, Cressler JD, Marshall PW, Liang Q, Freeman G. Impact of proton irradiation on the RF performance of 65 nm SOI CMOS technology Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. 47-52. DOI: 10.1109/RADECS.2008.5782682  0.304
2007 Grens CM, Cressler JD, Andrews JM, Liang Q, Joseph AJ. The effects of scaling and bias configuration on operating-voltage constraints in SiGe HBTs for mixed-signal circuits Ieee Transactions On Electron Devices. 54: 1605-1616. DOI: 10.1109/Ted.2007.898671  0.73
2007 Yuan J, Cressler JD, Zhu C, Cui Y, Niu G, Liang Q, Joseph AJ. An investigation of negative differential resistance and novel collector-current kink effects in SiGe HBTs operating at cryogenic temperatures Ieee Transactions On Electron Devices. 54: 504-516. DOI: 10.1109/Ted.2006.890392  0.711
2007 Appaswamy A, Jun B, Diestelhorst RM, Espinel G, Gnana Prakash AP, Cressler JD, Marshall PW, Marshall CJ, Liang Q, Freeman G, Isaacs-Smith T, Williams JR. The effects of proton irradiation on 90 nm strained Si CMOS on SOI devices Ieee Radiation Effects Data Workshop. 62-65. DOI: 10.1109/REDW.2006.295469  0.667
2006 Yuan J, Zhu C, Cui Y, Cressler JD, Niu G, Liang Q, Zhao E, Appaswamy A, Krithivasan R, Joseph A. A new device phenomenon in cryogenically-operated SiGe HBTs Technical Digest - International Electron Devices Meeting, Iedm. DOI: 10.1109/IEDM.2006.346857  0.708
2006 Liang Q, Krithivasan R, Ahmed A, Lu Y, Li Y, Cressler JD, Niu G, Rieh JS, Freeman G, Ahlgren D, Joseph A. Analysis and understanding of unique cryogenic phenomena in state-of-the-art SiGe HBTs Solid-State Electronics. 50: 964-972. DOI: 10.1016/j.sse.2006.04.027  0.622
2005 Chen T, Sutton AK, Bellini M, Haugerud BM, Comeau JP, Liang Q, Cressler JD, Cai J, Ning TH, Marshall PW, Marshall CJ. Proton radiation effects in vertical SiGe HBTs fabricated on CMOS-compatible SOI Ieee Transactions On Nuclear Science. 52: 2353-2357. DOI: 10.1109/Tns.2005.860726  0.631
2005 Liang Q, Andrews JM, Cressler JD, Niu G. Systematic linearity analysis of RFICs using a two-port lumped-nonlinear-source model Ieee Transactions On Microwave Theory and Techniques. 53: 1745-1755. DOI: 10.1109/Tmtt.2005.847101  0.488
2005 Banerjee B, Venkataraman S, Lu Y, Liang Q, Lee C, Nuttinck S, Heo D, Chen Y-E, Cressler JD, Laskar J, Freeman G, Ahlgren DC. Cryogenic operation of third-generation, 200-GHz peak-f/sub T/, silicon-germanium heterojunction bipolar transistors Ieee Transactions On Electron Devices. 52: 585-593. DOI: 10.1109/Ted.2005.845078  0.502
2005 Zhu C, Liang Q, Al-Huq RA, Cressler JD, Lu Y, Chen T, Joseph AJ, Niu G. Damage mechanisms in impact-ionization-induced mixed-mode reliability degradation of SiGe HBTs Ieee Transactions On Device and Materials Reliability. 5: 142-148. DOI: 10.1109/Tdmr.2005.843835  0.62
2005 Liang Q, Niu G, Cressler JD, Taylor S, Harame DL. On the optimization and design of SiGe HBT cascode low-noise amplifiers Solid-State Electronics. 49: 329-341. DOI: 10.1016/J.Sse.2004.10.002  0.503
2004 Chen T, Kuo WML, Zhao E, Liang Q, Jin Z, Cressler JD, Joseph AJ. On the high-temperature (to 300 °C) characteristics of SiGe HBTs Ieee Transactions On Electron Devices. 51: 1825-1832. DOI: 10.1109/Ted.2004.836779  0.663
2004 Johansen JA, Jin Z, Cressler JD, Cui Y, Niu G, Liang Q, Rieh JS, Freeman G, Ahlgren D, Joseph A. On the scaling limits of low-frequency noise in SiGe HBTs Solid-State Electronics. 48: 1897-1900. DOI: 10.1016/J.Sse.2004.05.032  0.603
2003 Liang Q, Cressler JD, Niu G, Lu Y, Freeman G, Ahlgren DC, Malladi RM, Newton K, Harame DL. A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs Ieee Transactions On Microwave Theory and Techniques. 51: 2165-2174. DOI: 10.1109/Tmtt.2003.818580  0.491
2002 Liang Q, Cressler JD, Niu G, Malladi RM, Newton K, Harame DL. A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs Ieee Transactions On Electron Devices. 49: 1807-1813. DOI: 10.1109/Ted.2002.803631  0.492
2001 Niu G, Liang Q, Cressler JD, Webster CS, Harame DL. RF linearity characteristics of SiGe HBTs Ieee Transactions On Microwave Theory and Techniques. 49: 1558-1565. DOI: 10.1109/22.942567  0.467
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