Year |
Citation |
Score |
2007 |
Cheng P, Zhao E, Cressler JD, Prasad J. On the mechanisms of low-frequency noise in vertical silicon pnp BJTs Proceedings of Spie - the International Society For Optical Engineering. 6600. DOI: 10.1117/12.724648 |
0.578 |
|
2006 |
Sutton AK, Prakash APG, Jun B, Zhao E, Bellini M, Pellish J, Diestelhorst RM, Carts MA, Phan A, Ladbury R, Cressler JD, Marshall PW, Marshall CJ, Reed RA, Schrimpf RD, et al. An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs Ieee Transactions On Nuclear Science. 53: 3166-3174. DOI: 10.1109/Tns.2006.885382 |
0.597 |
|
2006 |
Zhao E, Krithivasan R, Sutton A, Jin Z, Cressler J, El-Kareh B, Balster S, Yasuda H. Corrections to “An Investigation of Low-Frequency Noise in Complementary SiGe HBTs” Ieee Transactions On Electron Devices. 53: 1745-1745. DOI: 10.1109/Ted.2006.877207 |
0.634 |
|
2006 |
Zhao E, Krithivasan R, Sutton AK, Jin Z, Cressler JD, El-Kareh B, Balster S, Yasuda H. An investigation of low-frequency noise in complementary SiGe HBTs Ieee Transactions On Electron Devices. 53: 329-338. DOI: 10.1109/Ted.2005.862698 |
0.628 |
|
2006 |
Zhao E, Cressler JD, El-Diwany M, Krakowski TL, Sadovnikov A, Kocoski D. On the geometrical dependence of low-frequency noise in SiGe HBTs Solid-State Electronics. 50: 1748-1755. DOI: 10.1016/J.Sse.2006.09.018 |
0.603 |
|
2004 |
Zhao E, Sutton AK, Haugerud BM, Cressler JD, Marshall PW, Reed RA, El-Kareh B, Balster S, Yasuda H. The effects of radiation on 1/f noise in complementary (npn+pnp) SiGe HBTs Ieee Transactions On Nuclear Science. 51: 3243-3249. DOI: 10.1109/Tns.2004.839138 |
0.594 |
|
2004 |
Chen T, Kuo WML, Zhao E, Liang Q, Jin Z, Cressler JD, Joseph AJ. On the high-temperature (to 300 °C) characteristics of SiGe HBTs Ieee Transactions On Electron Devices. 51: 1825-1832. DOI: 10.1109/Ted.2004.836779 |
0.581 |
|
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