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Laleh Najafizadeh, Ph.D. - Publications

Affiliations: 
2009 Georgia Institute of Technology, Atlanta, GA 
Area:
Electronics and Electrical Engineering
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35 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Huang Y, Zhu L, Kong F, Cheung C, Najafizadeh L. BiCMOS-Based Compensation: Toward Fully Curvature-Corrected Bandgap Reference Circuits Ieee Transactions On Circuits and Systems I: Regular Papers. 65: 1210-1223. DOI: 10.1109/Tcsi.2017.2736062  0.479
2017 Huang Y, Najafizadeh L. A Precision SiGe Reference Circuit Utilizing Si and SiGe Bandgap Voltage Differences Ieee Transactions On Electron Devices. 64: 392-399. DOI: 10.1109/Ted.2016.2642101  0.529
2014 Cardoso AS, Chakraborty PS, Karaulac N, Fleischhauer DM, Lourenco NE, Fleetwood ZE, Omprakash AP, England TD, Jung S, Najafizadeh L, Roche NJH, Khachatrian A, Warner JH, McMorrow D, Buchner SP, et al. Single-event transient and total dose response of precision voltage reference circuits designed in a 90-nm SiGe BiCMOS technology Ieee Transactions On Nuclear Science. 61: 3210-3217. DOI: 10.1109/Tns.2014.2358078  0.578
2014 England T, Chatterjee C, Lourenco N, Finn S, Najafizadeh L, Phillips S, Kenyon E, Diestelhorst R, Cressler J. Cold-capable, radiation-hardened SiGe BiCMOS wireline transceivers Ieee Aerospace and Electronic Systems Magazine. 29: 32-41. DOI: 10.1109/Maes.2014.6805364  0.527
2014 Huang Y, Zhu L, Cheung C, Najafizadeh L. A low temperature coefficient voltage reference utilizing BiCMOS compensation technique Proceedings - Ieee International Symposium On Circuits and Systems. 922-925. DOI: 10.1109/ISCAS.2014.6865287  0.416
2014 Huang Y, Zhu L, Cheung C, Najafizadeh L. A curvature-compensation technique based on the difference of Si and SiGe junction voltages for bandgap voltage circuits Proceedings - Ieee International Symposium On Circuits and Systems. 914-917. DOI: 10.1109/ISCAS.2014.6865285  0.431
2014 Huang Y, Kong F, Najafizadeh L. Towards temperature-stable level shifters 2014 Ieee International Conference On Electron Devices and Solid-State Circuits, Edssc 2014. DOI: 10.1109/EDSSC.2014.7061283  0.421
2013 Huang Y, Cheung C, Najafizadeh L. A multi-piecewise curvature-corrected technique for bandgap reference circuits Midwest Symposium On Circuits and Systems. 305-308. DOI: 10.1109/MWSCAS.2013.6674646  0.389
2012 Riley JD, Amyot F, Pohida T, Pursley R, Ardeshipour Y, Kainerstorfer JM, Najafizadeh L, Chernomordik V, Smith P, Smirniotopoulos J, Wassermann EM, Gandjbakhche AH. Handheld near infra red imaging device for hemorrhage detection Biomedical Optics, Biomed 2012. BSu3A.75. DOI: 10.1364/Biomed.2012.Bsu3A.75  0.31
2012 England TD, Chatterjee C, Diestelhorst RM, Cressler JD, Finn S, Najafizadeh L. Cold-capable SiGe BiCMOS wireline transceivers for distributed electronics systems Ieee Aerospace Conference Proceedings. DOI: 10.1109/AERO.2012.6187222  0.333
2011 Moen KA, Najafizadeh L, Seungwoo J, Raman A, Turowski M, Cressler JD. Accurate modeling of single-event transients in a SiGe voltage reference circuit Ieee Transactions On Nuclear Science. 58: 877-884. DOI: 10.1109/Tns.2011.2107333  0.772
2011 Seth S, Najafizadeh L, Cressler JD. On the RF properties of weakly saturated SiGe HBTs and their potential use in ultralow-voltage circuits Ieee Electron Device Letters. 32: 3-5. DOI: 10.1109/Led.2010.2087313  0.718
2011 Thomas DB, Najafizadeh L, Cressler JD, Moen KA, Lourenco N. Optimization of SiGe bandgap-based circuits for up to 300 °c operation Solid-State Electronics. 56: 47-55. DOI: 10.1016/J.Sse.2010.11.010  0.78
2010 Phillips SD, Moen KA, Najafizadeh L, Diestelhorst RM, Sutton AK, Cressler JD, Vizkelethy G, Dodd PE, Marshall PW. A comprehensive understanding of the efficacy of N-ring SEE hardening methodologies in SiGe HBTs Ieee Transactions On Nuclear Science. 57: 3400-3406. DOI: 10.1109/Tns.2010.2077651  0.764
2010 Luo L, Niu G, Najafizadeh L, Cressler JD. Impact of the non-ideal temperature dependence of I C-V BEon ultra-wide temperature range SiGe HBT bandgap reference circuits Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 220-223. DOI: 10.1109/BIPOL.2010.5668007  0.52
2010 Diestelhorst RM, Finn S, Najafizadeh L, Ma D, Xi P, Ulaganathan C, Cressler JD, Blalock B, Dai F, Mantooth A, Del Castillo L, Mojarradi M, Berger R. A monolithic, wide-temperature, charge amplification channel for extreme environments Ieee Aerospace Conference Proceedings. DOI: 10.1109/AERO.2010.5446718  0.482
2010 Vizkelethy G, Phillips SD, Najafizadeh L, Cressler JD. Nuclear microbeam studies of silicon-germanium heterojunction bipolar transistors (HBTs) Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 268: 2092-2098. DOI: 10.1016/J.Nimb.2010.02.016  0.603
2009 Najafizadeh L, Phillips SD, Moen KA, Diestelhorst RM, Bellini M, Saha PK, Cressler JD, Vizkelethy G, Turowski M, Raman A, Marshall PW. Single event transient response of sige voltage references and its impact on the performance of analog and mixed-signal circuits Ieee Transactions On Nuclear Science. 56: 3469-3476. DOI: 10.1109/Tns.2009.2034159  0.781
2009 Cheng P, Pellish JA, Carts MA, Phillips S, Wilcox E, Thrivikraman T, Najafizadeh L, Cressler JD, Marshall PW. Re-examining TID hardness assurance test protocols for SiGe HBTs Ieee Transactions On Nuclear Science. 56: 3318-3325. DOI: 10.1109/Tns.2009.2032857  0.758
2009 Najafizadeh L, Adams JS, Phillips SD, Moen KA, Cressler JD, Aslam S, Stevenson TR, Meloy RM. Sub-1-K operation of SiGe transistors and circuits Ieee Electron Device Letters. 30: 508-510. DOI: 10.1109/Led.2009.2016767  0.772
2009 Thomas DB, Cressler JD, Najafizadeh L, Phillips SD, Wayne Johnson R, Peltz L, Wilcox EP, Moen KA. Performance and reliability of SiGe devices and circuits for high-temperature applications Proceedings - 2009 Imaps International Conference On High Temperature Electronics Network, Hiten 2009. 49-56.  0.774
2008 Najafizadeh L, Vo T, Phillips SD, Cheng P, Wilcox EP, Cressler JD, Mojarradi M, Marshall PW. The effects of proton irradiation on the performance of high-voltage n-MOSFETs implemented in a low-voltage SiGe BiCMOS platform Ieee Transactions On Nuclear Science. 55: 3253-3258. DOI: 10.1109/Tns.2008.2007120  0.585
2007 Najafizadeh L, Sutton AK, Diestelhorst RM, Bellini M, Jun B, Cressler JD, Marshall PW, Marshall CJ. A comparison of the effects of X-ray and proton irradiation on the performance of SiGe precision voltage references Ieee Transactions On Nuclear Science. 54: 2238-2244. DOI: 10.1109/Tns.2007.910858  0.708
2007 Najafizadeh L, Sutton AK, Jun B, Cressler JD, Vo T, Momeni O, Mojarradi M, Ulaganathan C, Chen S, Blalock BJ, Yao Y, Yu X, Dai F, Marshall PW, Marshall CJ. Radiation response of SiGe BiCMOS mixed-signal circuits intended for emerging lunar applications Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. DOI: 10.1109/RADECS.2007.5205572  0.44
2007 Comeau JP, Najafizadeh L, Andrews JM, Gnana Prakash AP, Cressler JD. An exploration of substrate coupling at K-band between a SiGe HBT power amplifier and a SiGe HBT voltage-controlled-oscillator Ieee Microwave and Wireless Components Letters. 17: 349-351. DOI: 10.1109/Lmwc.2007.895703  0.578
2007 Finn S, Yuan J, Krithivasan R, Najafizadeh L, Cheng P, Cressler JD. A 10 Mbps SiGe BiCMOS transceiver for operation down to cryogenic temperatures Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 115-118. DOI: 10.1109/BIPOL.2007.4351849  0.676
2006 Feng Z, Niu G, Zhu C, Najafizadeh L, Cressler JD. Temperature scalable modeling of SiGe HBT DC currents down to 43K Ecs Transactions. 3: 927-936. DOI: 10.1149/1.2355887  0.46
2006 Najafizadeh L, Bellini M, Prakash APG, Espinel GA, Cressler JD, Marshall PW, Marshall CJ. Proton tolerance of SiGe precision voltage references for extreme temperature range electronics Ieee Transactions On Nuclear Science. 53: 3210-3216. DOI: 10.1109/Tns.2006.885381  0.741
2006 Krithivasan R, Marshall PW, Nayeem M, Sutton AK, Kuo WM, Haugerud BM, Najafizadeh L, Cressler JD, Carts MA, Marshall CJ, Hansen DL, Jobe KCM, McKay AL, Niu G, Reed R, et al. Application of RHBD techniques to SEU hardening of third-generation SiGe HBT logic circuits Ieee Transactions On Nuclear Science. 53: 3400-3407. DOI: 10.1109/Tns.2006.885379  0.744
2006 Krithivasan R, Lu Y, Najafizadeh L, Zhu C, Cressler JD, Chen S, Ulaganathan C, Blalock BJ. A high-slew rate SiGe BiCMOS operational amplifier for operation down to deep cryogenic temperatures Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. DOI: 10.1109/BIPOL.2006.311170  0.672
2006 Najafizadeh L, Zhu C, Krithivasan R, Cressler JD, Cui Y, Niu G, Chen S, Ulaganathan C, Blalock BJ, Joseph AJ. SiGe BiCMOS precision voltage references for extreme temperature range electronics Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. DOI: 10.1109/BIPOL.2006.311117  0.694
2006 Chen T, Zhu C, Najafizadeh L, Jun B, Ahmed A, Diestelhorst R, Espinel G, Cressler JD. CMOS reliability issues for emerging cryogenic Lunar electronics applications Solid-State Electronics. 50: 959-963. DOI: 10.1016/j.sse.2006.05.010  0.536
2004 Najafizadeh L, Filanovsky IM. Towards a sub-1 V CMOS voltage reference Proceedings - Ieee International Symposium On Circuits and Systems. 1.  0.43
2004 Najafizadeh L, Filanovsky IM. A simple voltage reference using transistor with ZTC point and PTAT current source Proceedings - Ieee International Symposium On Circuits and Systems. 1.  0.434
2002 Filanovsky IM, Najafizadeh L. Zeroing in on a zero-temperature coefficient point Midwest Symposium On Circuits and Systems. 1.  0.408
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