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Jiahui Yuan, Ph.D. - Publications

Affiliations: 
2010 Georgia Institute of Technology, Atlanta, GA 
Area:
Electronics and Electrical Engineering
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11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Yuan J, Cressler JD. Design and optimization of superjunction collectors for use in high-speed SiGe HBTs Ieee Transactions On Electron Devices. 58: 1655-1662. DOI: 10.1109/Ted.2011.2128872  0.57
2010 Yuan J, Moen KA, Cressler JD, Rücker H, Heinemann B, Winkler W. SiGe HBT CML ring oscillator with 2.3-ps gate delay at cryogenic temperatures Ieee Transactions On Electron Devices. 57: 1183-1187. DOI: 10.1109/Ted.2010.2042769  0.708
2009 Yuan J, Cressler JD, Krithivasan R, Thrivikraman T, Khater MH, Ahlgren DC, Joseph AJ, Rieh JS. On the performance limits of cryogenically operated SiGe HBTs and its relation to scaling for terahertz speeds Ieee Transactions On Electron Devices. 56: 1007-1019. DOI: 10.1109/Ted.2009.2016017  0.653
2008 Thrivikraman TK, Yuan J, Bardin JC, Mani H, Phillips SD, Kuo WML, Cressler JD, Weinreb S. SiGe HBT X-band LNAs for ultra-low-noise cryogenic receivers Ieee Microwave and Wireless Components Letters. 18: 476-478. DOI: 10.1109/Lmwc.2008.925104  0.668
2007 Appaswamy A, Bellini M, Kuo WML, Cheng P, Yuan J, Zhu C, Cressler JD, Niu G, Joseph AJ. Impact of scaling on the inverse-mode operation of SiGe HBTs Ieee Transactions On Electron Devices. 54: 1492-1501. DOI: 10.1109/Ted.2007.896570  0.641
2007 Yuan J, Cressler JD, Zhu C, Cui Y, Niu G, Liang Q, Joseph AJ. An investigation of negative differential resistance and novel collector-current kink effects in SiGe HBTs operating at cryogenic temperatures Ieee Transactions On Electron Devices. 54: 504-516. DOI: 10.1109/Ted.2006.890392  0.695
1996 Yuan JS. Study of AlGaAs/InGaAs pseudomorphic HEMT using a two-dimensional device simulator Physica Status Solidi (a) Applied Research. 153: 559-566.  0.303
1994 Yuan JS. Low-temperature BiCMOS gate pull-down delay analysis International Journal of Electronics. 76: 221-232. DOI: 10.1080/00207219408925920  0.382
1994 Yuan JS. Base current reversal in bipolar transistors and circuits: a review and update Iee Proceedings: Circuits, Devices and Systems. 141: 299-306. DOI: 10.1049/ip-cds:19941101  0.337
1993 Yuan JS. Avalanche breakdown effects on AIGaAs/GaAs HBT performance International Journal of Electronics. 74: 909-916. DOI: 10.1080/00207219308925892  0.343
1992 Yuan JS. Delay Analysis of BiNMOS Driver Including High Current Transients Ieee Transactions On Electron Devices. 39: 587-592. DOI: 10.1109/16.123482  0.326
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