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Bharat Jalan, Ph.D. - Publications

Affiliations: 
2011 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering, Condensed Matter Physics, Electronics and Electrical Engineering
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74 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2024 Varshney S, Choo S, Thompson L, Yang Z, Shah J, Wen J, Koester SJ, Mkhoyan KA, McLeod AS, Jalan B. Hybrid Molecular Beam Epitaxy for Single-Crystalline Oxide Membranes with Binary Oxide Sacrificial Layers. Acs Nano. PMID 38314696 DOI: 10.1021/acsnano.3c11192  0.351
2023 Manjeshwar AK, Nair S, Rajapitamahuni AK, James RD, Jalan B. Adsorption-Controlled Growth and Magnetism in Epitaxial SrRuO Films. Acs Nano. PMID 37708240 DOI: 10.1021/acsnano.3c03625  0.422
2023 Liu F, Golani P, Truttmann TK, Evangelista I, Smeaton MA, Bugallo D, Wen J, Manjeshwar AK, May SJ, Kourkoutis LF, Janotti A, Koester SJ, Jalan B. Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO. Acs Nano. PMID 37638732 DOI: 10.1021/acsnano.3c04003  0.392
2023 Ghosh S, Liu F, Jalan B, Mkhoyan KA. Control of Extended Defect Growth in Perovskite Oxide Thin Films using Nanoscale Patterning. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 29: 541-542. PMID 37613264 DOI: 10.1093/micmic/ozad067.255  0.363
2023 Nair S, Yang Z, Lee D, Guo S, Sadowski JT, Johnson S, Saboor A, Li Y, Zhou H, Comes RB, Jin W, Mkhoyan KA, Janotti A, Jalan B. Engineering metal oxidation using epitaxial strain. Nature Nanotechnology. PMID 37217765 DOI: 10.1038/s41565-023-01397-0  0.35
2022 Yoon H, Truttmann TK, Liu F, Matthews BE, Choo S, Su Q, Saraswat V, Manzo S, Arnold MS, Bowden ME, Kawasaki JK, Koester SJ, Spurgeon SR, Chambers SA, Jalan B. Freestanding epitaxial SrTiO nanomembranes via remote epitaxy using hybrid molecular beam epitaxy. Science Advances. 8: eadd5328. PMID 36563139 DOI: 10.1126/sciadv.add5328  0.415
2022 Yang Z, Lee D, Yue J, Gabel J, Lee TL, James RD, Chambers SA, Jalan B. Epitaxial SrTiO films with dielectric constants exceeding 25,000. Proceedings of the National Academy of Sciences of the United States of America. 119: e2202189119. PMID 35653574 DOI: 10.1073/pnas.2202189119  0.421
2022 Yue J, Ayino Y, Truttmann TK, Gastiasoro MN, Persky E, Khanukov A, Lee D, Thoutam LR, Kalisky B, Fernandes RM, Pribiag VS, Jalan B. Anomalous transport in high-mobility superconducting SrTiO thin films. Science Advances. 8: eabl5668. PMID 35613270 DOI: 10.1126/sciadv.abl5668  0.4
2022 Rajapitamahuni AK, Manjeshwar AK, Kumar A, Datta A, Ranga P, Thoutam LR, Krishnamoorthy S, Singisetti U, Jalan B. Plasmon-Phonon Coupling in Electrostatically Gated β-GaO Films with Mobility Exceeding 200 cm V s. Acs Nano. PMID 35436095 DOI: 10.1021/acsnano.1c09535  0.33
2021 Thoutam LR, Truttmann TK, Rajapitamahuni AK, Jalan B. Hysteretic Magnetoresistance in a Non-Magnetic SrSnO Film via Thermal Coupling to Dynamic Substrate Behavior. Nano Letters. 21: 10006-10011. PMID 34807629 DOI: 10.1021/acs.nanolett.1c03653  0.363
2020 Ayino Y, Yue J, Wang T, Jalan B, Pribiag V. Effects of paramagnetic pair-breaking and spin-orbital coupling on multi-band superconductivity. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 32422615 DOI: 10.1088/1361-648X/Ab940C  0.337
2020 Chaganti VRSK, Truttmann TK, Liu F, Jalan B, Koester SJ. SrSnO 3 Field-Effect Transistors With Recessed Gate Electrodes Ieee Electron Device Letters. 41: 1428-1431. DOI: 10.1109/Led.2020.3011058  0.37
2020 Provence SR, Thapa S, Paudel R, Truttmann TK, Prakash A, Jalan B, Comes RB. Machine learning analysis of perovskite oxides grown by molecular beam epitaxy Physical Review Materials. 4. DOI: 10.1103/Physrevmaterials.4.083807  0.324
2020 Wang H, Prakash A, Reich K, Ganguly K, Jalan B, Leighton C. Scattering mechanisms and mobility enhancement in epitaxial BaSnO3 thin films probed via electrolyte gating Apl Materials. 8: 71113. DOI: 10.1063/5.0017227  0.493
2020 Jalan B. Structure, Strain Relaxation and Defects in Alkaline Earth Stannates Films Microscopy and Microanalysis. 1-2. DOI: 10.1017/S1431927620015275  0.429
2019 Prakash A, Quackenbush NF, Yun H, Held JT, Wang T, Truttmann T, Ablett JM, Weiland C, Lee TL, Woicik JC, Mkhoyan KA, Jalan B. Separating Electrons and Donors in BaSnO via Band Engineering. Nano Letters. PMID 31702928 DOI: 10.1021/Acs.Nanolett.9B03825  0.429
2019 Thoutam LR, Yue J, Prakash A, Wang T, Elangovan KE, Jalan B. Electrostatic Control of Insulator-Metal Transition in La-doped SrSnO Films. Acs Applied Materials & Interfaces. PMID 30761892 DOI: 10.1021/Acsami.8B22034  0.533
2019 Alaan US, Wong FJ, Ditto JJ, Robertson AW, Lindgren E, Prakash A, Haugstad G, Shafer P, N'Diaye AT, Johnson D, Arenholz E, Jalan B, Browning ND, Suzuki Y. Magnetism and transport in transparent high-mobility BaSnO3 films doped with La, Pr, Nd, and Gd Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.124402  0.494
2019 Truttmann T, Prakash A, Yue J, Mates TE, Jalan B. Dopant solubility and charge compensation in La-doped SrSnO3 films Applied Physics Letters. 115: 152103. DOI: 10.1063/1.5119272  0.462
2019 Yue J, Thoutam LR, Prakash A, Wang T, Jalan B. Unraveling the effect of electron-electron interaction on electronic transport in La-doped SrSnO3 films Applied Physics Letters. 115: 082102. DOI: 10.1063/1.5113522  0.456
2019 Prakash A, Jalan B. Wide Bandgap Perovskite Oxides with High Room‐Temperature Electron Mobility Advanced Materials Interfaces. 6: 1900479. DOI: 10.1002/Admi.201900479  0.386
2018 Wang T, Prakash A, Dong Y, Truttmann T, Bucsek A, James RD, Fong DD, Kim JW, Ryan PJ, Zhou H, Birol T, Jalan B. Engineering SrSnO Phases and Electron Mobility at Room Temperature Using Epitaxial Strain. Acs Applied Materials & Interfaces. PMID 30457322 DOI: 10.1021/Acsami.8B16592  0.544
2018 Yun H, Ganguly K, Postiglione W, Jalan B, Leighton C, Mkhoyan KA, Jeong JS. Microstructure characterization of BaSnO thin films on LaAlO and PrScO substrates from transmission electron microscopy. Scientific Reports. 8: 10245. PMID 29980713 DOI: 10.1038/S41598-018-28520-9  0.557
2018 Yue J, Prakash A, Robbins MC, Koester SJ, Jalan B. Depletion Mode MOSFET using La-doped BaSnO as a Channel Material. Acs Applied Materials & Interfaces. PMID 29897732 DOI: 10.1021/Acsami.8B05229  0.387
2018 Arezoomandan S, Prakash A, Chanana A, Yue J, Mao J, Blair S, Nahata A, Jalan B, Sensale-Rodriguez B. THz characterization and demonstration of visible-transparent/terahertz-functional electromagnetic structures in ultra-conductive La-doped BaSnOFilms. Scientific Reports. 8: 3577. PMID 29476173 DOI: 10.1038/S41598-018-22038-W  0.434
2018 Yun H, Topsakal M, Prakash A, Ganguly K, Leighton C, Jalan B, Wentzcovitch RM, Mkhoyan KA, Jeong JS. Electronic structure of BaSnO3investigated by high-energy-resolution electron energy-loss spectroscopy andab initiocalculations Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 36: 031503. DOI: 10.1116/1.5026298  0.41
2018 Chaganti VRSK, Prakash A, Yue J, Jalan B, Koester SJ. Demonstration of a Depletion-Mode SrSnO3 n-Channel MESFET Ieee Electron Device Letters. 39: 1381-1384. DOI: 10.1109/Led.2018.2861320  0.383
2018 Ayino Y, Xu P, Tigre-Lazo J, Yue J, Jalan B, Pribiag VS. Ferromagnetism and spin-dependent transport at a complex oxide interface Physical Review Materials. 2. DOI: 10.1103/Physrevmaterials.2.031401  0.344
2018 Chambers SA, Du Y, Zhu Z, Wang J, Wahila MJ, Piper LFJ, Prakash A, Yue J, Jalan B, Spurgeon SR, Kepaptsoglou DM, Ramasse QM, Sushko PV. Interconversion of intrinsic defects in SrTiO3(001) Physical Review B. 97. DOI: 10.1103/Physrevb.97.245204  0.392
2018 Nunn W, Prakash A, Bhowmik A, Haislmaier R, Yue J, Garcia Lastra JM, Jalan B. Frequency- and temperature-dependent dielectric response in hybrid molecular beam epitaxy-grown BaSnO3 films Apl Materials. 6: 066107. DOI: 10.1063/1.5027567  0.514
2018 Chen L, Zhang Y, Wang X, Jalan B, Chen S, Hou Y. Roles of Point Defects in Thermal Transport in Perovskite Barium Stannate The Journal of Physical Chemistry C. 122: 11482-11490. DOI: 10.1021/Acs.Jpcc.8B00653  0.319
2018 Yun H, Ganguly K, Postiglione W, Jalan B, Leighton C, Mkhoyan KA, Jeong JS. Uncovering the Microstructure of BaSnCb Thin Films Deposited on Different Substrates Using TEM Microscopy and Microanalysis. 24: 2198-2199. DOI: 10.1017/S1431927618011479  0.464
2017 Prakash A, Xu P, Faghaninia A, Shukla S, Ager JW, Lo CS, Jalan B. Wide bandgap BaSnO3 films with room temperature conductivity exceeding 10(4) S cm(-1). Nature Communications. 8: 15167. PMID 28474675 DOI: 10.1038/Ncomms15167  0.485
2017 Wang T, Thoutam LR, Prakash A, Nunn W, Haugstad G, Jalan B. Defect-driven localization crossovers in MBE-grown La-doped SrSnO3 films Physical Review Materials. 1. DOI: 10.1103/Physrevmaterials.1.061601  0.488
2017 Ganguly K, Prakash A, Jalan B, Leighton C. Mobility-electron density relation probed via controlled oxygen vacancy doping in epitaxial BaSnO3 Apl Materials. 5: 056102. DOI: 10.1063/1.4983039  0.489
2017 Prakash A, Xu P, Wu X, Haugstad G, Wang X, Jalan B. Adsorption-controlled growth and the influence of stoichiometry on electronic transport in hybrid molecular beam epitaxy-grown BaSnO3 films Journal of Materials Chemistry C. 5: 5730-5736. DOI: 10.1039/C7Tc00190H  0.513
2017 Grimley ED, Wang T, Jalan B, LeBeau JM. Compositional Ordering and Polar Nano-Regions: Physical Effects of Sn Alloying in SrTiO3 Thin Films Microscopy and Microanalysis. 23: 1582-1583. DOI: 10.1017/S1431927617008571  0.591
2016 Jeong JS, Topsakal M, Xu P, Jalan B, Wentzcovitch RM, Mkhoyan KA. A New Line Defect in NdTiO3 Perovskite. Nano Letters. PMID 27736081 DOI: 10.1021/Acs.Nanolett.6B02532  0.319
2016 Xu P, Ayino Y, Cheng C, Pribiag VS, Comes RB, Sushko PV, Chambers SA, Jalan B. Predictive Control over Charge Density in the Two-Dimensional Electron Gas at the Polar-Nonpolar NdTiO_{3}/SrTiO_{3} Interface. Physical Review Letters. 117: 106803. PMID 27636487 DOI: 10.1103/Physrevlett.117.106803  0.438
2016 Arezoomandan S, Quispe HOC, Chanana A, Xu P, Nahata A, Jalan B, Sensale-Rodriguez B. Terahertz conductivity of ultra high electron concentration 2DEGs in NTO/STO heterostructures Proceedings of Spie. 9934. DOI: 10.1117/12.2238026  0.462
2016 Jeong JS, Odlyzko ML, Xu P, Jalan B, Mkhoyan KA. Probing core-electron orbitals by scanning transmission electron microscopy and measuring the delocalization of core-level excitations Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.165140  0.344
2016 Wang T, Pitike KC, Yuan Y, Nakhmanson SM, Gopalan V, Jalan B. Chemistry, growth kinetics, and epitaxial stabilization of Sn2+ in Sn-doped SrTiO3 using (CH3)6Sn2 tin precursor Apl Materials. 4: 126111. DOI: 10.1063/1.4972995  0.464
2016 Ambwani P, Xu P, Haugstad G, Jeong JS, Deng R, Mkhoyan KA, Jalan B, Leighton C. Defects, stoichiometry, and electronic transport in SrTiO3-δ epilayers: A high pressure oxygen sputter deposition study Journal of Applied Physics. 120. DOI: 10.1063/1.4960343  0.53
2016 Arezoomandan S, Condori Quispe H, Chanana A, Xu P, Nahata A, Jalan B, Sensale-Rodriguez B. Large nanoscale electronic conductivity in complex oxide heterostructures with ultra high electron density Apl Materials. 4. DOI: 10.1063/1.4959284  0.409
2016 Chambers SA, Kaspar TC, Prakash A, Haugstad G, Jalan B. Band alignment at epitaxial BaSnO3/SrTiO3(001) and BaSnO3/LaAlO3(001) heterojunctions Applied Physics Letters. 108. DOI: 10.1063/1.4946762  0.494
2016 Xu P, Droubay TC, Jeong JS, Mkhoyan KA, Sushko PV, Chambers SA, Jalan B. Quasi 2D Ultrahigh Carrier Density in a Complex Oxide Broken-Gap Heterojunction Advanced Materials Interfaces. 3. DOI: 10.1002/Admi.201500432  0.403
2015 Prakash A, Dewey J, Yun H, Jeong JS, Mkhoyan KA, Jalan B. Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO3 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4933401  0.561
2015 Wang T, Prakash A, Warner E, Gladfelter WL, Jalan B. Molecular beam epitaxy growth of SnO2 using a tin chemical precursor Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4913294  0.489
2015 Comes RB, Xu P, Jalan B, Chambers SA. Band alignment of epitaxial SrTiO3 thin films with (LaAlO3)0.3-(Sr2AlTaO6)0.7 (001) Applied Physics Letters. 107. DOI: 10.1063/1.4932063  0.529
2015 Ganguly K, Ambwani P, Xu P, Jeong JS, Mkhoyan KA, Leighton C, Jalan B. Structure and transport in high pressure oxygen sputter-deposited BaSnO3-δ Apl Materials. 3. DOI: 10.1063/1.4919969  0.536
2015 Seok Jeong J, Topsakal M, Xu P, Wentzcovitch RM, Jalan B, Andre Mkhoyan K. Electronic Structure of New Line Defect in Strained NdTiCb on SrTiO3 Microscopy and Microanalysis. 21: 2073-2074. DOI: 10.1017/S1431927615011149  0.301
2014 Xu P, Phelan D, Seok Jeong J, Andre Mkhoyan K, Jalan B. Stoichiometry-driven metal-to-insulator transition in NdTiO 3/SrTiO3 heterostructures Applied Physics Letters. 104. DOI: 10.1063/1.4866867  0.502
2014 Seok Jeong J, Odlyzko ML, Xu P, Jalan B, Andre Mkhoyan K. Interfaces and defects in hybrid molecular beam epitaxy grown NdTiO<inf>3</inf>/SrTiO<inf>3</inf> heterostructures Microscopy and Microanalysis. 20: 98-99. DOI: 10.1017/S1431927614002219  0.358
2013 Jeong JS, Ambwani P, Jalan B, Leighton C, Mkhoyan KA. Observation of electrically-inactive interstitials in Nb-doped SrTiO3. Acs Nano. 7: 4487-94. PMID 23621788 DOI: 10.1021/Nn401101Y  0.562
2013 Allen SJ, Jalan B, Lee S, Ouellette DG, Khalsa G, Jaroszynski J, Stemmer S, Macdonald AH. Conduction-band edge and Shubnikov-de Haas effect in low-electron-density SrTiO3 Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.045114  0.597
2013 Wang T, Ganguly K, Marshall P, Xu P, Jalan B. Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO3 films Applied Physics Letters. 103. DOI: 10.1063/1.4833248  0.504
2012 Kaiser AM, Gray AX, Conti G, Jalan B, Kajdos AP, Gloskovskii A, Ueda S, Yamashita Y, Kobayashi K, Drube W, Stemmer S, Fadley CS. Electronic structure of delta-doped La:SrTiO 3 layers by hard x-ray photoelectron spectroscopy Applied Physics Letters. 100. DOI: 10.1063/1.4731642  0.574
2012 Janotti A, Jalan B, Stemmer S, Van De Walle CG. Effects of doping on the lattice parameter of SrTiO 3 Applied Physics Letters. 100. DOI: 10.1063/1.4730998  0.59
2011 Keeble DJ, Jalan B, Ravelli L, Egger W, Kanda G, Stemmer S. Suppression of vacancy defects in epitaxial La-doped SrTiO 3 films Applied Physics Letters. 99. DOI: 10.1063/1.3664398  0.631
2011 Son J, Jalan B, Kajdos AP, Balents L, James Allen S, Stemmer S. Probing the metal-insulator transition of NdNiO3 by electrostatic doping Applied Physics Letters. 99. DOI: 10.1063/1.3659310  0.687
2011 Oh DW, Ravichandran J, Liang CW, Siemons W, Jalan B, Brooks CM, Huijben M, Schlom DG, Stemmer S, Martin LW, Majumdar A, Ramesh R, Cahill DG. Thermal conductivity as a metric for the crystalline quality of SrTiO 3 epitaxial layers Applied Physics Letters. 98. DOI: 10.1063/1.3579993  0.555
2011 Jalan B, Allen SJ, Beltz GE, Moetakef P, Stemmer S. Enhancing the electron mobility of SrTiO3 with strain Applied Physics Letters. 98. DOI: 10.1063/1.3571447  0.751
2011 Moetakef P, Zhang JY, Kozhanov A, Jalan B, Seshadri R, Allen SJ, Stemmer S. Transport in ferromagnetic GdTiO3 / SrTiO3 heterostructures Applied Physics Letters. 98. DOI: 10.1063/1.3568894  0.752
2010 Son J, Moetakef P, Jalan B, Bierwagen O, Wright NJ, Engel-Herbert R, Stemmer S. Epitaxial SrTiO3 films with electron mobilities exceeding 30,000 cm2 V(-1) s(-1). Nature Materials. 9: 482-4. PMID 20364139 DOI: 10.1038/Nmat2750  0.793
2010 Jalan B, Stemmer S, MacK S, Allen SJ. Two-dimensional electron gas in δ -doped SrTiO3 Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.081103  0.54
2010 Jalan B, Stemmer S. Large Seebeck coefficients and thermoelectric power factor of La-doped SrTiO3 thin films Applied Physics Letters. 97. DOI: 10.1063/1.3471398  0.612
2009 Jalan B, Cagnon J, Mates TE, Stemmer S. Analysis of carbon in SrTiO3 grown by hybrid molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 1365-1368. DOI: 10.1116/1.3253355  0.618
2009 Jalan B, Engel-Herbert R, Wright NJ, Stemmer S. Growth of high-quality SrTiO3 films using a hybrid molecular beam epitaxy approach Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 461-464. DOI: 10.1116/1.3106610  0.661
2009 Jalan B, Engel-Herbert R, Cagnon J, Stemmer S. Growth modes in metal-organic molecular beam epitaxy of TiO2 on r -plane sapphire Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 230-233. DOI: 10.1116/1.3065713  0.633
2009 Lebeau JM, Engel-Herbert R, Jalan B, Cagnon J, Moetakef P, Stemmer S, Stephenson GB. Stoichiometry optimization of homoepitaxial oxide thin films using x-ray diffraction Applied Physics Letters. 95. DOI: 10.1063/1.3243696  0.774
2009 Jalan B, Moetakef P, Stemmer S. Molecular beam epitaxy of SrTiO3 with a growth window Applied Physics Letters. 95. DOI: 10.1063/1.3184767  0.757
2009 Engel-Herbert R, Jalan B, Cagnon J, Stemmer S. Microstructure of epitaxial rutile TiO2 films grown by molecular beam epitaxy on r-plane Al2O3 Journal of Crystal Growth. 312: 149-153. DOI: 10.1016/J.Jcrysgro.2009.10.005  0.651
2008 Jalan B, Engel-Herbert R, Mates TE, Stemmer S. Effects of hydrogen anneals on oxygen deficient SrTiO3-x single crystals Applied Physics Letters. 93. DOI: 10.1063/1.2969037  0.519
2007 Stemmer S, Lu J, Finstrom NH, Park J, Keane SP, Pervez NK, Schmidt S, Boesch DS, Jalan B, Klenov DO, Cagnon J, York RA. High-permittivity thin films for tunable microwave circuits Ieee Antennas and Propagation Society, Ap-S International Symposium (Digest). 1721-1724. DOI: 10.1109/APS.2007.4395846  0.313
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