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Branden M. Long, Ph.D. - Publications

Affiliations: 
2013 Engineering Science The University of Toledo 
Area:
Electronics and Electrical Engineering
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7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Chen W, Lu W, Long B, Li Y, Gilmer D, Bersuker G, Bhunia S, Jha R. Switching characteristics of W/Zr/HfO2/TiN ReRAM devices for multi-level cell non-volatile memory applications Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/7/075002  0.609
2013 Mandal S, Long B, Jha R. Study of Synaptic Behavior in Doped Transition Metal Oxide-Based Reconfigurable Devices Ieee Transactions On Electron Devices. 60: 4219-4225. DOI: 10.1109/Ted.2013.2288327  0.532
2013 Long BM, Mandal S, Livecchi J, Jha R. Effects of Mg-doping on HfO2-based ReRAM device switching characteristics Ieee Electron Device Letters. 34: 1247-1249. DOI: 10.1109/Led.2013.2276482  0.589
2012 Long B, Li Y, Jha R. Switching Characteristics of RRAM Devices for Digital and Analog Nonvolatile Memory Applications Ieee Electron Device Letters. 33: 706-708. DOI: 10.1109/Led.2012.2188775  0.572
2012 Long B, Li Y, Mandal S, Jha R, Leedy K. Switching dynamics and charge transport studies of resistive random access memory devices Applied Physics Letters. 101: 113503. DOI: 10.1063/1.4749809  0.611
2011 Long B, Li Y, Jha R. Understanding the Role of Process Parameters on the Characteristics of Transition Metal Oxide RRAM/Memristor Devices Mrs Proceedings. 1337. DOI: 10.1557/Opl.2011.983  0.561
2011 Long B, Ordosgoitti J, Jha R, Melkonian C. Understanding the Charge Transport Mechanism in VRS and BRS States of Transition Metal Oxide Nanoelectronic Memristor Devices Ieee Transactions On Electron Devices. 58: 3912-3919. DOI: 10.1109/Ted.2011.2165845  0.592
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