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Chunhai Ji, Ph.D. - Publications

Affiliations: 
2005 State University of New York, Buffalo, Buffalo, NY, United States 
Area:
Electronics and Electrical Engineering, Energy
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12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Ma L, Zhang Q, Zhao Q, Li Z, Ji C, Xu XJ. Synthesis and Characterization of Bi₂Te₃/Te Superlattice Nanowire Arrays. Journal of Nanoscience and Nanotechnology. 16: 1207-10. PMID 27398588  0.308
2016 Wu X, Wu Z, Liu Z, Ji C, Huang Z, Su Y, Gou J, Wang J, Jiang Y. Rebound effect of IMT properties by different doping form in Si-doped vanadium dioxide films Applied Physics Letters. 109. DOI: 10.1063/1.4962815  0.443
2005 Ji C, Anderson WA. Poly-Si thin films by metal-induced growth for photovoltaic applications Solar Energy Materials and Solar Cells. 85: 313-320. DOI: 10.1016/J.Solmat.2004.05.002  0.703
2004 Ji C, Kim J, Anderson WA. Current Transport Study of Schottky and P-N Junction Solar Cells Using Metal-Induced Growth Poly-Si Thin Films Mrs Proceedings. 836. DOI: 10.1557/Proc-836-L5.47  0.623
2004 Kim J, Ji C, Anderson WA. Silicon Nanowire Growth at Relatively Low Processing Temperature Mrs Proceedings. 818. DOI: 10.1557/Proc-818-M11.11.1  0.57
2004 Ji C, Anderson WA. Solar Cells on Foreign Substrates Using Poly-Si Thin Films by Metal Induced Growth Mrs Proceedings. 808. DOI: 10.1557/Proc-808-A4.21  0.657
2003 Ji C, Anderson WA. Effects of Film Interfaces on the Properties of Poly-Si Grown by The Metal-Induced Technique for Solar Cell Applications Mrs Proceedings. 796. DOI: 10.1557/Proc-796-V2.6  0.678
2003 Ji C, Anderson WA. Si nanocrystals by metal induced growth using different catalyzing metals Materials Research Society Symposium - Proceedings. 737: 655-660. DOI: 10.1557/Proc-737-F8.3  0.717
2002 Ji C, Guliants EA, Abeysinghe D, Anderson WA. Self-organized Si Nanowires with Room-Temperature Photo-Emission Mrs Proceedings. 728. DOI: 10.1557/Proc-728-S3.34  0.734
2002 Guliants EA, Ji C, Anderson WA. Self-assembly of spatially separated silicon structures by Si heteroepitaxy on Ni disilicide Journal of Applied Physics. 91: 6077-6080. DOI: 10.1063/1.1469205  0.737
2002 Guliants EA, Ji C, Song YJ, Anderson WA. A 0.5-μm-thick polycrystalline silicon Schottky diode with rectification ratio of 10 6 Applied Physics Letters. 80: 1474-1476. DOI: 10.1063/1.1454214  0.741
2002 Guliants EA, Ji C, Anderson WA. The role of nucleation and heteroepitaxial processes in nanostructuring of Si Journal of Electronic Materials. 31: 466-471. DOI: 10.1007/S11664-002-0101-Z  0.734
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