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Sumiko L. Hayashi, Ph.D. - Publications

Affiliations: 
2004 University of California, Los Angeles, Los Angeles, CA 
Area:
Materials Science Engineering
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16 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2010 Ventosa-Moulet C, Hayashi SL, Goorsky MS. Lattice strain and strain evolution in hydrogen implanted materials: The roles of mechanical properties and hydrogen diffusion Ecs Transactions. 33: 249-254. DOI: 10.1149/1.3483514  0.448
2008 Joshi MB, Hayashi SL, Hu SJ, Goorsky MS. Cleave-Engineered Layer Transfer using porous silicon Ecs Transactions. 16: 263-270. DOI: 10.1149/1.2982877  0.54
2008 Joshi MB, Hayashi SL, Goorsky MS. Fabrication of transfer-enhanced semiconductor substrates by wafer bonding and hydrogen exfoliation techniques Electrochemical and Solid-State Letters. 11. DOI: 10.1149/1.2940345  0.591
2008 Goorsky MS, Joshi MB, Hayashi SL, Jackson M. Engineered layer transfer substrates for heterogeneous integration of III-V compound semiconductors 2008 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2008.  0.528
2007 Hayashi S, Sandhu R, Goorsky MS. The surface morphology of hydrogen-exfoliated InP and exfoliation parameters Journal of the Electrochemical Society. 154. DOI: 10.1149/1.2435708  0.546
2007 Jackson M, Goorsky MS, Noori A, Hayashi S, Sandhu R, Poust B, Chang-Chien P, Gutierrez-Aitken A, Tsai R. Determination of stress distribution in III-V single crystal layers for heterogeneous integration applications Physica Status Solidi (a) Applications and Materials Science. 204: 2675-2681. DOI: 10.1002/Pssa.200675675  0.715
2006 Lange MD, Tsai RS, Deal WR, Nam PS, Lee LJ, Sandhu RS, Hsing R, Poust BD, Kraus JL, Gutierrez-Aitken AL, Bennett BR, Boos JB, Noori AM, Hayashi SL, Goorsky MS. InAsAlSb high-electron-mobility transistors by molecular-beam epitaxy for low-power applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2581-2585. DOI: 10.1116/1.2362758  0.621
2006 Cavus A, Sandhu R, Monier C, Cox C, Pascua D, Gutierrez-Aitken A, Noori A, Hayashi S, Goorsky M. Development of 6.00Å graded metamorphic buffer layers and high performance In0.86Al0.14As∕In0.86Ga0.14As heterojunction bipolar transistor devices Journal of Vacuum Science & Technology B. 24: 1492-1495. DOI: 10.1116/1.2197516  0.628
2005 Hayashi S, Sandhu R, Wojtowicz M, Sun Y, Hicks R, Goorsky MS. Determination of wafer bonding mechanisms for plasma activated SiN films with x-ray reflectivity Journal of Physics D: Applied Physics. 38: A174-A178. DOI: 10.1088/0022-3727/38/10A/033  0.573
2005 Poust B, Heying B, Hayashi S, Ho R, Matney K, Sandhu R, Wojtowicz M, Goorsky M. Scans along arbitrary directions in reciprocal space and the analysis of GaN films on SiC Journal of Physics D: Applied Physics. 38: A93-A98. DOI: 10.1088/0022-3727/38/10A/018  0.662
2005 Hayashi S, Sandhu R, Wojtowicz M, Chen G, Hicks R, Goorsky MS. InGaAs quantum wells on wafer-bonded InP/GaAs substrates Journal of Applied Physics. 98. DOI: 10.1063/1.2130889  0.57
2005 Lange MD, Cavus A, Tsai RS, Monier C, Deal WR, Chan B, Cox AC, Pascua DG, Sandhu RS, Hsing R, Poust BD, Kraus JL, Nam PS, Lee LJ, Li D, ... ... Hayashi SL, et al. Ultra-low-power HEMT and HBT devices and circuit demonstrations 2005 International Semiconductor Device Research Symposium. 2005: 145-146.  0.613
2004 Noori AM, Sandhu RS, Hayashi SL, Meserole ED, Hardev V, Cavus A, Lange M, Monier C, Hsing R, Sawdai D, Wojtowicz M, Block TR, Gutierrez-Aitken A, Goorsky MS. Strain relaxation and surface roughness of in xAl 1-xAs graded buffer layers grown on InP for 6.05 Å applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2303-2308. DOI: 10.1116/1.1782640  0.735
2004 Chen G, Cheng D, Hicks RF, Noori AM, Hayashi SL, Goorsky MS, Kanjolia R, Odedra R. Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine Journal of Crystal Growth. 270: 322-328. DOI: 10.1016/J.Jcrysgro.2004.06.048  0.73
2003 Hayashi S, Bruno D, Sandhu R, Goorsky MS. X-ray scattering techniques for assessment of III-V wafer bonding Journal of Physics D: Applied Physics. 36. DOI: 10.1088/0022-3727/36/10A/349  0.605
2003 Hayashi S, Bruno D, Sandhu R, Goorsky MS. Wafer bonding for III-V on insulator structures Journal of Electronic Materials. 32: 877-881. DOI: 10.1007/S11664-003-0204-1  0.613
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