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Atif M. Noori, Ph.D. - Publications

Affiliations: 
2006 University of California, Los Angeles, Los Angeles, CA 
Area:
Materials Science Engineering, Electronics and Electrical Engineering, Condensed Matter Physics
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16 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Kim WH, Kim MK, Oh IK, Maeng WJ, Cheon T, Kim SH, Noori A, Thompson D, Chu S, Kim H. Significant Enhancement of the Dielectric Constant through the Doping of CeO2 into HfO2 by Atomic Layer Deposition Journal of the American Ceramic Society. 97: 1164-1169. DOI: 10.1111/Jace.12762  0.337
2013 Veloso A, Chew SA, Higuchi Y, Ragnarsson LA, Simoen E, Schram T, Witters T, Van Ammel A, Dekkers H, Tielens H, Devriendt K, Heylen N, Sebaai F, Brus S, Favia P, ... ... Noori A, et al. Effective work function engineering for aggressively scaled planar and multi-gate fin field-effect transistor-based devices with high-k last replacement metal gate technology Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.04Ca02  0.407
2013 Chang M, Chen MS, David A, Gandikota S, Ganguli S, Hayden BE, Hung S, Lu X, Mormiche C, Noori A, Smith DCA, Vian CJB. Novel metal gates for high κ applications Journal of Applied Physics. 113. DOI: 10.1063/1.4780447  0.338
2013 Oh I, Kim M, Lee J, Lee C, Lansalot-Matras C, Noh W, Park J, Noori A, Thompson D, Chu S, Maeng W, Kim H. The effect of La2O3-incorporation in HfO2 dielectrics on Ge substrate by atomic layer deposition Applied Surface Science. 287: 349-354. DOI: 10.1016/J.Apsusc.2013.09.153  0.356
2012 Veloso A, Chew SA, Higuchi Y, Ragnarsson LA, Simoen E, Schram T, Witters T, Ammel AV, Dekkers H, Tielens H, Devriendt K, Heylen N, Sebaai F, Brus S, Favia P, ... ... Noori A, et al. Effective Work Function Engineering for Aggressively Scaled Planar and FinFET-based Devices with High-k Last Replacement Metal Gate Tech. The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2012.D-1-2  0.309
2007 Cheng SF, Woo RL, Noori AM, Malouf G, Goorsky MS, Hicks RF. Metalorganic chemical vapor deposition of InGaAsN using dilute nitrogen trifluoride Journal of Crystal Growth. 299: 277-281. DOI: 10.1016/J.Jcrysgro.2006.11.207  0.528
2007 Jackson M, Goorsky MS, Noori A, Hayashi S, Sandhu R, Poust B, Chang-Chien P, Gutierrez-Aitken A, Tsai R. Determination of stress distribution in III-V single crystal layers for heterogeneous integration applications Physica Status Solidi (a) Applications and Materials Science. 204: 2675-2681. DOI: 10.1002/Pssa.200675675  0.694
2006 Hayashi S, Noori AM, Sandhu R, Cavus A, Gutierrez-Aitken A, Goorsky MS. InAs on insulator by hydrogen implantation and exfoliation Ecs Transactions. 3: 129-136. DOI: 10.1149/1.2357062  0.381
2006 Hayashi S, Goorsky M, Noori A, Bruno D. Materials Issues for the Heterogeneous Integration of III-V Compounds Journal of the Electrochemical Society. 153: G1011. DOI: 10.1149/1.2353607  0.594
2006 Noori AM, Hayashi S, Goorsky MS, Sandhu R, Cavus A, Gambin V, Gutierrez-Aitken A. Role of dislocations in hydrogen-induced exfoliation of narrow bandgap semiconductors Ecs Transactions. 2: 27-33. DOI: 10.1149/1.2204876  0.508
2006 Lange MD, Tsai RS, Deal WR, Nam PS, Lee LJ, Sandhu RS, Hsing R, Poust BD, Kraus JL, Gutierrez-Aitken AL, Bennett BR, Boos JB, Noori AM, Hayashi SL, Goorsky MS. InAsAlSb high-electron-mobility transistors by molecular-beam epitaxy for low-power applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2581-2585. DOI: 10.1116/1.2362758  0.605
2005 Sandhu R, Hayashi S, Noori AM, Goorsky M, Cavus A, Monier C, Lange M, Gutierrez-Aitken A. Materials and device properties of ultra-thin 6.0 Å in xAL 1-xAs graded buffer layers and HBTS Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 2005: 86-89. DOI: 10.1109/ICIPRM.2005.1517426  0.329
2005 Yoon TS, Liu J, Noori AM, Goorsky MS, Xie YH. Surface roughness and dislocation distribution in compositionally graded relaxed SiGe buffer layer with inserted-strained Si layers Applied Physics Letters. 87. DOI: 10.1063/1.1988986  0.545
2005 Lange MD, Cavus A, Tsai RS, Monier C, Deal WR, Chan B, Cox AC, Pascua DG, Sandhu RS, Hsing R, Poust BD, Kraus JL, Nam PS, Lee LJ, Li D, ... ... Noori AM, et al. Ultra-low-power HEMT and HBT devices and circuit demonstrations 2005 International Semiconductor Device Research Symposium. 2005: 145-146.  0.595
2004 Noori AM, Sandhu RS, Hayashi SL, Meserole ED, Hardev V, Cavus A, Lange M, Monier C, Hsing R, Sawdai D, Wojtowicz M, Block TR, Gutierrez-Aitken A, Goorsky MS. Strain relaxation and surface roughness of in xAl 1-xAs graded buffer layers grown on InP for 6.05 Å applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2303-2308. DOI: 10.1116/1.1782640  0.715
2004 Chen G, Cheng D, Hicks RF, Noori AM, Hayashi SL, Goorsky MS, Kanjolia R, Odedra R. Metalorganic vapor-phase epitaxy of III/V phosphides with tertiarybutylphosphine and tertiarybutylarsine Journal of Crystal Growth. 270: 322-328. DOI: 10.1016/J.Jcrysgro.2004.06.048  0.724
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