Benjamin D. Poust, Ph.D. - Publications
Affiliations: | 2007 | University of California, Los Angeles, Los Angeles, CA |
Area:
Materials Science EngineeringYear | Citation | Score | |||
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2006 | Lange MD, Tsai RS, Deal WR, Nam PS, Lee LJ, Sandhu RS, Hsing R, Poust BD, Kraus JL, Gutierrez-Aitken AL, Bennett BR, Boos JB, Noori AM, Hayashi SL, Goorsky MS. InAsAlSb high-electron-mobility transistors by molecular-beam epitaxy for low-power applications Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2581-2585. DOI: 10.1116/1.2362758 | 0.504 | |||
2005 | Lange MD, Cavus A, Tsai RS, Monier C, Deal WR, Chan B, Cox AC, Pascua DG, Sandhu RS, Hsing R, Poust BD, Kraus JL, Nam PS, Lee LJ, Li D, et al. Ultra-low-power HEMT and HBT devices and circuit demonstrations 2005 International Semiconductor Device Research Symposium. 2005: 145-146. | 0.527 | |||
2003 | Poust BD, Koga TS, Sandhu R, Heying B, Hsing R, Wojtowicz M, Khan A, Goorsky MS. SiC substrate defects and III-N heteroepitaxy Journal of Physics D: Applied Physics. 36: A102-A106. DOI: 10.1088/0022-3727/36/10A/321 | 0.488 | |||
2000 | Feichtinger P, Fukuto H, Sandhu R, Poust B, Goorsky MS. Ion implantation and misfit dislocation formation in p/p+ silicon Materials Research Society Symposium - Proceedings. 594: 37-42. DOI: 10.1557/Proc-594-37 | 0.611 | |||
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