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Kevin M. Daniels, Ph.D. - Publications

Affiliations: 
2014 Electrical Engineering University of South Carolina, Columbia, SC 
Area:
Electronics and Electrical Engineering, Chemical Engineering, Environmental Health
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37 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Pedowitz MD, Kim S, Lewis DI, Uppalapati B, Khan D, Bayram F, Koley G, Daniels KM. Fast Selective Sensing of Nitrogen-Based Gases Utilizing δ -MnO₂-Epitaxial Graphene-Silicon Carbide Heterostructures for Room Temperature Gas Sensing Ieee\/Asme Journal of Microelectromechanical Systems. 1-7. DOI: 10.1109/Jmems.2020.3007342  0.512
2020 Kotsakidis JC, Grubišić-Čabo A, Yin Y, Tadich A, Myers-Ward RL, DeJarld M, Pavunny SP, Currie M, Daniels KM, Liu C, Edmonds MT, Medhekar NV, Gaskill DK, Vázquez de Parga AL, Fuhrer MS. Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer–SiC(0001) Interface Chemistry of Materials. 32: 6464-6482. DOI: 10.1021/Acs.Chemmater.0C01729  0.483
2019 Pennachio DJ, Ornelas-Skarin CC, Wilson NS, Rosenberg SG, Daniels KM, Myers-Ward RL, Gaskill DK, Eddy CR, Palmstrøm CJ. Tailoring commensurability of hBN/graphene heterostructures using substrate morphology and epitaxial growth conditions Journal of Vacuum Science & Technology A. 37: 051503. DOI: 10.1116/1.5110524  0.48
2019 Bloos D, Kunc J, Kaeswurm L, Myers-Ward RL, Daniels K, DeJarld M, Nath A, van Slageren J, Gaskill DK, Neugebauer P. Contactless millimeter wave method for quality assessment of large area graphene 2d Materials. 6: 035028. DOI: 10.1088/2053-1583/AB1D7E  0.332
2019 Jadidi MM, Daniels KM, Myers-Ward RL, Gaskill DK, König-Otto JC, Winnerl S, Sushkov AB, Drew HD, Murphy TE, Mittendorff M. Optical Control of Plasmonic Hot Carriers in Graphene Acs Photonics. 6: 302-307. DOI: 10.1021/Acsphotonics.8B01499  0.518
2019 Pavunny SP, Myers-Ward RL, Daniels KM, Shi W, Sridhara K, DeJarld MT, Boyd AK, Kub FJ, Kohl PA, Carter SG, Gaskill DK. On the doping concentration dependence and dopant selectivity of photogenerated carrier assisted etching of 4H–SiC epilayers Electrochimica Acta. 323: 134778. DOI: 10.1016/J.Electacta.2019.134778  0.395
2019 El Fatimy A, Han P, Quirk N, St. Marie L, Dejarld MT, Myers-Ward RL, Daniels K, Pavunny S, Gaskill DK, Aytac Y, Murphy TE, Barbara P. Effect of defect-induced cooling on graphene hot-electron bolometers Carbon. 154: 497-502. DOI: 10.1016/J.Carbon.2019.08.019  0.461
2018 DeJarld M, Campbell PM, Friedman AL, Currie M, Myers-Ward RL, Boyd AK, Rosenberg SG, Pavunny SP, Daniels KM, Gaskill DK. Surface potential and thin film quality of low work function metals on epitaxial graphene. Scientific Reports. 8: 16487. PMID 30405192 DOI: 10.1038/S41598-018-34595-1  0.502
2018 Kong W, Li H, Qiao K, Kim Y, Lee K, Nie Y, Lee D, Osadchy T, Molnar RJ, Gaskill DK, Myers-Ward RL, Daniels KM, Zhang Y, Sundram S, Yu Y, et al. Polarity governs atomic interaction through two-dimensional materials. Nature Materials. PMID 30297812 DOI: 10.1038/S41563-018-0176-4  0.437
2018 Myers-Ward RL, Hobart KD, Daniels KM, Giles AJ, Tadjer MJ, Luna LE, Kub FJ, Pavunny SP, Carter SG, Banks HB, Glaser ER, Klein PB, Feygelson BN, Gaskill DK. Processing of Cavities in SiC Material for Quantum Technologies Materials Science Forum. 924: 905-908. DOI: 10.4028/Www.Scientific.Net/Msf.924.905  0.336
2018 El Fatimy A, Nath A, Kong BD, Boyd AK, Myers-Ward RL, Daniels KM, Jadidi MM, Murphy TE, Gaskill DK, Barbara P. Ultra-broadband photodetectors based on epitaxial graphene quantum dots Nanophotonics. 7: 735-740. DOI: 10.1515/Nanoph-2017-0100  0.393
2017 Barker BG, Chava VSN, Daniels KM, Chandrashekhar MVS, Greytak AB. Sub-bandgap response of graphene/SiC Schottky emitter bipolar phototransistor examined by scanning photocurrent microscopy 2d Materials. 5: 011003. DOI: 10.1088/2053-1583/aa90b1  0.686
2017 Daniels KM, Jadidi MM, Sushkov AB, Nath A, Boyd AK, Sridhara K, Drew HD, Murphy TE, Myers-Ward RL, Gaskill DK. Narrow plasmon resonances enabled by quasi-freestanding bilayer epitaxial graphene 2d Materials. 4: 025034. DOI: 10.1088/2053-1583/aa5c75  0.454
2017 Nath A, Kong BD, Koehler AD, Anderson VR, Wheeler VD, Daniels KM, Boyd AK, Cleveland ER, Myers-Ward RL, Gaskill DK, Hobart KD, Kub FJ, Jernigan GG. Universal conformal ultrathin dielectrics on epitaxial graphene enabled by a graphene oxide seed layer Applied Physics Letters. 110: 013106. DOI: 10.1063/1.4973200  0.521
2016 Jadidi MM, Sushkov AB, Myers-Ward RL, Boyd AK, Daniels KM, Gaskill DK, Fuhrer MS, Drew HD, Murphy TE. Correction to Tunable Terahertz Hybrid Metal-Graphene Plasmons. Nano Letters. PMID 26906255 DOI: 10.1021/Acs.Nanolett.6B00640  0.494
2016 El Fatimy A, Myers-Ward RL, Boyd AK, Daniels KM, Gaskill DK, Barbara P. Epitaxial graphene quantum dots for high-performance terahertz bolometers. Nature Nanotechnology. PMID 26727199 DOI: 10.1038/Nnano.2015.303  0.462
2016 Uddin MA, Singh A, Daniels K, Vogt T, Chandrashekhar MVS, Koley G. Impedance spectroscopic analysis of nanoparticle functionalized graphene/p-Si Schottky diode sensors Japanese Journal of Applied Physics. 55: 110312. DOI: 10.7567/Jjap.55.110312  0.676
2016 Daniels KM, Obe A, Daas BK, Weidner J, Williams C, Sudarshan TS, Chandrashekhar M. Metal Catalyzed Electrochemical Synthesis of Hydrocarbons from Epitaxial Graphene Journal of the Electrochemical Society. 163: E130-E134. DOI: 10.1149/2.0791605Jes  0.803
2016 Daniels KM, Jadidi MM, Sushkov AB, Boyd AK, Nath A, Drew HD, Murphy TE, Myers-Ward RL, Gaskill DK. Narrow terahertz plasmon resonance of quasi-freestanding bilayer epitaxial graphene Device Research Conference - Conference Digest, Drc. 2016. DOI: 10.1109/DRC.2016.7548425  0.503
2016 Rana T, Chandrashekhar MVS, Daniels K, Sudarshan T. SiC Homoepitaxy, Etching and Graphene Epitaxial Growth on SiC Substrates Using a Novel Fluorinated Si Precursor Gas (SiF4) Journal of Electronic Materials. 45: 2019-2024. DOI: 10.1007/S11664-015-4234-2  0.729
2015 Jadidi MM, Sushkov AB, Myers-Ward RL, Boyd AK, Daniels KM, Gaskill DK, Fuhrer MS, Drew HD, Murphy TE. Tunable Terahertz Hybrid Metal-Graphene Plasmons. Nano Letters. 15: 7099-104. PMID 26397718 DOI: 10.1021/Acs.Nanolett.5B03191  0.504
2015 Rana T, Chandrashekhar MVS, Daniels K, Sudarshan T. Epitaxial growth of graphene on SiC by Si selective etching using SiF4in an inert ambient Japanese Journal of Applied Physics. 54. DOI: 10.7567/Jjap.54.030304  0.722
2015 Daniels KM, Shetu S, Staser J, Weidner J, Williams C, Sudarshan TS, Chandrashekhar MVS. Mechanism of electrochemical hydrogenation of epitaxial graphene Journal of the Electrochemical Society. 162: E37-E42. DOI: 10.1149/2.0191504Jes  0.803
2015 Uddin MA, Singh AK, Daniels KM, Chandrashekhar MVS, Koley G. Impedance spectroscopic analysis of Functionalized Graphene/silicon Schottky Diode sensor 2015 Transducers - 2015 18th International Conference On Solid-State Sensors, Actuators and Microsystems, Transducers 2015. 1381-1384. DOI: 10.1109/TRANSDUCERS.2015.7181190  0.612
2014 Coletti C, Forti S, Principi A, Emtsev KV, Zakharov AA, Daniels KM, Daas BK, Chandrashekhar MVS, Macdonald AH, Polini M, Starke U. Revealing the electronic band structure of quasi-free trilayer graphene on SiC(0001) Materials Research Society Symposium Proceedings. 1693. DOI: 10.1557/Opl.2014.610  0.805
2013 Daniels KM, Shetu S, Staser J, Weidner J, Williams C, Sudarshan TS, Chandrashekhar MVS. Electrochemical hydrogenation of dimensional carbon Ecs Transactions. 58: 439-445. DOI: 10.1149/05804.0439ecst  0.521
2013 Shetu SS, Daas B, Daniels KM, Sudarshan TS, Koley G, Chandrashekhar MVS. Selective multimodal gas sensing in epitaxial graphene by fourier transform infrared spectroscopy Ieee Sensors 2013 - Proceedings. DOI: 10.1109/ICSENS.2013.6688517  0.786
2013 Coletti C, Forti S, Principi A, Emtsev KV, Zakharov AA, Daniels KM, Daas BK, Chandrashekhar MVS, Ouisse T, Chaussende D, Macdonald AH, Polini M, Starke U. Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.155439  0.802
2013 Shetu SS, Omar SU, Daniels KM, Daas B, Andrews J, Ma S, Sudarshan TS, Chandrashekhar MVS. Si-adatom kinetics in defect mediated growth of multilayer epitaxial graphene films on 6H-SiC Journal of Applied Physics. 114. DOI: 10.1063/1.4826899  0.758
2012 Daas BK, Nomani WK, Daniels KM, Sudarshan TS, Koley G, Chandrashekhar MVS. Molecular gas adsorption induced carrier transport studies of epitaxial graphene using IR reflection spectroscopy Materials Science Forum. 717: 665-668. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.665  0.804
2012 Daniels KM, Daas BK, Srivastava N, Williams C, Feenstra RM, Sudarshan TS, Chandrashekhar MVS. Evidence of electrochemical graphene functionalization by Raman spectroscopy Materials Science Forum. 717: 661-664. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.661  0.82
2012 Daas BK, Daniels K, Shetu S, Sudarshan TS, Chandrashekhar MVS. Study of epitaxial graphene on non-polar 6H-SiC faces Materials Science Forum. 717: 633-636. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.633  0.742
2012 Daniels KM, Daas BK, Srivastava N, Williams C, Feenstra RM, Sudarshan TS, Chandrashekhar MVS. Evidences of electrochemical graphene functionalization and substrate dependence by Raman and scanning tunneling spectroscopies Journal of Applied Physics. 111. DOI: 10.1063/1.4725489  0.819
2012 Daas BK, Omar SU, Shetu S, Daniels KM, Ma S, Sudarshan TS, Chandrashekhar MVS. Comparison of epitaxial graphene growth on polar and nonpolar 6H-SiC faces: On the growth of multilayer films Crystal Growth and Design. 12: 3379-3387. DOI: 10.1021/Cg300456V  0.764
2011 Daas BK, Daniels KM, Sudarshan TS, Chandrashekhar MVS. Polariton enhanced infrared reflection of epitaxial graphene Journal of Applied Physics. 110. DOI: 10.1063/1.3666069  0.815
2011 Daas BK, Nomani WK, Daniels KM, Sudarshan TS, Koley G, Méndez Torres A, Chandrashekhar MVS. Advance in molecular gas sensing studies using epitaxial graphene Transactions of the American Nuclear Society. 105: 260-261.  0.811
2010 Tedesco JL, Jernigan GG, Culbertson JC, Hite JK, Yang Y, Daniels KM, Myers-Ward RL, Eddy CR, Robinson JA, Trumbull KA, Wetherington MT, Campbell PM, Gaskill DK. Morphology characterization of argon-mediated epitaxial graphene on C-face SiC Applied Physics Letters. 96. DOI: 10.1063/1.3442903  0.583
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