☰

Harsh Naik, Ph.D. - Publications

Affiliations: 
2013 Electrical Engineering Rensselaer Polytechnic Institute, Troy, NY, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
Tree Info Similar researchers PubMed Report error

19 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Naik H, Chow TP. 4H-SiC MOS capacitors and MOSFET fabrication with gate oxidation at 1400°C Materials Science Forum. 778: 607-610. DOI: 10.4028/Www.Scientific.Net/Msf.778-780.607  0.678
2014 Stum Z, Tang Y, Naik H, Chow TP. Improved analytical expressions for avalanche breakdown in 4H-SiC Materials Science Forum. 778: 467-470. DOI: 10.4028/Www.Scientific.Net/Msf.778-780.467  0.61
2014 Wu JW, Chowdhury S, Naik H, Picard J, Lee N, Hitchcock C, Lu JJQ, Chow TP. S4-P7: Low-temperature hydrophobic wafer bonding for 1200V, 25A bi-directional Si UMOS IGBTs Lester Eastman Conference 2014 - High Performance Devices, Lec 2014. DOI: 10.1109/LEC.2014.6951568  0.513
2012 Bolotnikov AV, Losee P, Matocha K, Nasadoski J, Glaser J, Arthur S, Stum Z, Garrett J, Elasser A, Stevanovic L, Naik H, Chow TP. Design, yield and process capability study of 8kV 4H-SiC PIN diodes Materials Science Forum. 717: 953-956. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.953  0.637
2012 Naik H, Li Z, Issa H, Tian Y, Chow TP. Study of high temperature microwave annealing on the performance of 4H-SiC MOS capacitors Materials Science Forum. 717: 769-772. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.769  0.706
2012 Li Z, Naik H, Chow TP. Design of GaN and SiC 5-20kV vertical superjunction structures 2012 Lester Eastman Conference On High Performance Devices, Lec 2012. DOI: 10.1109/lec.2012.6410985  0.52
2012 Naik H, Chow TP. Comparison of AC I-V characteristic of Si and SiC MOSFETs 2012 Lester Eastman Conference On High Performance Devices, Lec 2012. DOI: 10.1109/lec.2012.6410984  0.58
2011 Naik H, Chow TP. Comparison of inversion electron transport properties of (0001) 4H and 6H-SiC MOSFETs Materials Science Forum. 679: 678-681. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.678  0.662
2011 Naik H, Chow TP. Study of mobility limiting mechanisms in (0001) 4H and 6H-SiC MOSFETs Materials Science Forum. 679: 595-598. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.595  0.644
2011 Naik H, Marron T, Chow TP. Cryogenic operation of GaN Schottky rectifiers International Journal of High Speed Electronics and Systems. 20: 457-461. DOI: 10.1142/S012915641100674X  0.6
2011 Li Z, Naik H, Chow TP. Modeling and experimental study of MOS channel mobility of etched GaN on silicon substrate Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2433-2435. DOI: 10.1002/Pssc.201001172  0.66
2011 Naik H, Marron T, Chow TP. High-low temperature performance of GaN 600 V Schottky rectifiers Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2219-2222. DOI: 10.1002/Pssc.201001089  0.636
2010 Naik H, Li Z, Chow TP. Experimental identification of extra type of charges at SiO2/SiC interface in 4H-SiC Materials Science Forum. 645: 519-522. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.519  0.714
2009 Naik H, Tang K, Marron T, Chow TP, Fronheiser J. Comparison of 4H-SiC MOSFETs on (0001), (000-1) and (11-20) oriented substrates Materials Science Forum. 615: 785-788. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.785  0.698
2009 Naik H, Tang K, Chow TP. Effect of graphite cap for implant activation on inversion channel mobility in 4H-SiC MOSFETs Materials Science Forum. 615: 773-776. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.773  0.683
2009 Naik H, Wang Y, Chow TP. Characterization and modeling of integrated diode in 1.2kV 4H-SiC vertical power MOSFET International Journal of High Speed Electronics and Systems. 19: 167-172. DOI: 10.1142/S0129156409006229  0.628
2009 Naik H, Tang K, Chow TP. Effect of gate oxide processes on 4H-SiC MOSFETs on (000-1) oriented substrate International Journal of High Speed Electronics and Systems. 19: 161-166. DOI: 10.1142/S0129156409006217  0.66
2009 Chow TP, Naik H, Li Z. Comparative study of 4H-SiC and 2H-GaN MOS capacitors and FETs Physica Status Solidi (a) Applications and Materials Science. 206: 2478-2486. DOI: 10.1002/Pssa.200925125  0.722
2008 Wang Y, Tang K, Khan T, Balasubramanian MK, Naik H, Wang W, Chow TP. The effect of gate oxide processes on the performance of 4H-SiC MOSFETs and gate-controlled diodes Ieee Transactions On Electron Devices. 55: 2046-2053. DOI: 10.1109/Ted.2008.926674  0.654
Show low-probability matches.