| Year |
Citation |
Score |
| 2023 |
Huang VW, Liu Y, Raghothamachar B, Dudley M. Upgraded for rapid recognition and fitting of Laue patterns from crystals with unknown orientations. Journal of Applied Crystallography. 56: 1610-1615. PMID 37791354 DOI: 10.1107/S1600576723007926 |
0.588 |
|
| 2020 |
Dalmau R, Britt J, Fang HY, Raghothamachar B, Dudley M, Schlesser R. X-Ray Topography Characterization of Large Diameter AlN Single Crystal Substrates Materials Science Forum. 1004: 63-68. DOI: 10.4028/Www.Scientific.Net/Msf.1004.63 |
0.72 |
|
| 2020 |
Ailihumaer T, Raghothamachar B, Dudley M, Chung G, Manning I, Sanchez E. Investigation of Dislocation Behavior at the Early Stage of PVT-Grown 4H-SiC Crystals Materials Science Forum. 1004: 44-50. DOI: 10.4028/Www.Scientific.Net/Msf.1004.44 |
0.716 |
|
| 2020 |
Ailihumaer T, Peng H, Raghothamachar B, Dudley M, Chung G, Manning I, Sanchez E. Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers Materials Science Forum. 1004: 393-400. DOI: 10.4028/Www.Scientific.Net/Msf.1004.393 |
0.678 |
|
| 2020 |
Yang L, Zhao LX, Wu HW, Liu Y, Ailihumaer T, Raghothamachar B, Dudley M. Characterization and Reduction of Defects in 4H-SiC Substrate and Homo-Epitaxial Wafer Materials Science Forum. 1004: 387-392. DOI: 10.4028/Www.Scientific.Net/Msf.1004.387 |
0.719 |
|
| 2020 |
Manning I, Matsuda Y, Chung G, Sanchez E, Dudley M, Ailihumaer T, Raghothamachar B. Progress in Bulk 4H SiC Crystal Growth for 150 mm Wafer Production Materials Science Forum. 1004: 37-43. DOI: 10.4028/Www.Scientific.Net/Msf.1004.37 |
0.684 |
|
| 2020 |
Renz AB, Shah VA, Vavasour OJ, Bonyadi Y, Li F, Dai T, Baker GWC, Hindmarsh S, Han Y, Walker M, Sharma Y, Liu Y, Raghothamachar B, Dudley M, Mawby PA, et al. The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment Journal of Applied Physics. 127: 025704. DOI: 10.1063/1.5133739 |
0.571 |
|
| 2020 |
Raghothamachar B, Liu Y, Peng H, Ailihumaer T, Dudley M, Shahedipour-Sandvik FS, Jones KA, Armstrong A, Allerman AA, Han J, Fu H, Fu K, Zhao Y. X-ray topography characterization of gallium nitride substrates for power device development Journal of Crystal Growth. 544: 125709. DOI: 10.1016/J.Jcrysgro.2020.125709 |
0.701 |
|
| 2020 |
Peng H, Ailihumaer T, Liu Y, Raghothamachar B, Dudley M. Characterization of defects and strain in the (AlxGa(1−x))0.5In0.5P/ GaAs system by synchrotron X-ray topography Journal of Crystal Growth. 533: 125458. DOI: 10.1016/J.Jcrysgro.2019.125458 |
0.688 |
|
| 2020 |
Peng H, Ailihumaer T, Raghothamachar B, Dudley M. Ray Tracing Simulation of Images of Dislocations and Inclusions on X-Ray Topographs of GaAs Epitaxial Wafers Journal of Electronic Materials. 49: 3472-3480. DOI: 10.1007/S11664-020-07981-7 |
0.651 |
|
| 2020 |
Ailihumaer T, Peng H, Raghothamachar B, Dudley M, Chung G, Manning I, Sanchez E. Relationship Between Basal Plane Dislocation Distribution and Local Basal Plane Bending in PVT-Grown 4H-SiC Crystals Journal of Electronic Materials. 49: 3455-3464. DOI: 10.1007/S11664-019-07937-6 |
0.716 |
|
| 2019 |
Manning I, Chung GY, Sanchez E, Dudley M, Ailihumaer T, Guo JQ, Goue O, Raghothamachar B. Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers Materials Science Forum. 963: 60-63. DOI: 10.4028/Www.Scientific.Net/Msf.963.60 |
0.625 |
|
| 2019 |
Ailihumaer T, Yang Y, Guo JQ, Raghothamachar B, Dudley M. Study of Nitrogen Doping Effect on Lattice Strain Variation in 4H-SiC Substrates by Synchrotron X-Ray Contour Mapping Method Materials Science Forum. 963: 336-340. DOI: 10.4028/Www.Scientific.Net/Msf.963.336 |
0.642 |
|
| 2019 |
Raghothamachar B, Yang Y, Guo JQ, Dudley M. Analysis of Basal Plane Dislocation Dynamics in 4H-SiC Crystals during High Temperature Treatment Materials Science Forum. 963: 268-271. DOI: 10.4028/Www.Scientific.Net/Msf.963.268 |
0.673 |
|
| 2019 |
Ailihumaer T, Yang Y, Guo J, Raghothamachar B, Dudley M. Studies on Lattice Strain Variation due to Nitrogen Doping by Synchrotron X-ray Contour Mapping Technique in PVT-Grown 4H-SiC Crystals Journal of Electronic Materials. 48: 3363-3369. DOI: 10.1007/S11664-019-07077-X |
0.631 |
|
| 2018 |
Dalmau R, Craft HS, Britt J, Paisley E, Moody B, Guo JQ, Ji YJ, Raghothamachar B, Dudley M, Schlesser R. High Quality AlN Single Crystal Substrates for AlGaN-Based Devices Materials Science Forum. 924: 923-926. DOI: 10.4028/Www.Scientific.Net/Msf.924.923 |
0.715 |
|
| 2018 |
McGuire S, Blasi R, Wu P, Loukas E, Emorhokpor E, Dimov S, Xu XP, Guo JQ, Yang Y, Raghothamachar B, Dudley M. Automated Mapping of Micropipes in SiC Wafers Using Polarized-Light Microscope Materials Science Forum. 924: 527-530. DOI: 10.4028/Www.Scientific.Net/Msf.924.527 |
0.583 |
|
| 2018 |
Guo JQ, Yang Y, Raghothamachar B, Dudley M, Weit S, Danilewsky AN, McNally PJ, Tanner BR. Direct Observation of Stress Relaxation Process in 4H-SiC Homoepitaxial Layers via In Situ Synchrotron X-Ray Topography Materials Science Forum. 924: 176-179. DOI: 10.4028/Www.Scientific.Net/Msf.924.176 |
0.671 |
|
| 2018 |
Yang Y, Guo JQ, Raghothamachar B, Dudley M, Weit S, Danilewsky AN, McNally PJ, Tanner BR. In Situ Synchrotron X-Ray Topography Observation of Double-Ended Frank-Read Sources in PVT-Grown 4H-SiC Wafers Materials Science Forum. 924: 172-175. DOI: 10.4028/Www.Scientific.Net/Msf.924.172 |
0.689 |
|
| 2018 |
Manning I, Chung GY, Sanchez E, Yang Y, Guo JQ, Goue O, Raghothamachar B, Dudley M. Optimization of 150 mm 4H SiC Substrate Crystal Quality Materials Science Forum. 924: 11-14. DOI: 10.4028/Www.Scientific.Net/Msf.924.11 |
0.675 |
|
| 2018 |
Freitas J, Culbertson J, Mahadik N, Tadjer M, Wu S, Raghothamachar B, Dudley M, Sochacki T, Bockowski M. Homoepitaxial HVPE GaN: A potential substrate for high performance devices Journal of Crystal Growth. 500: 104-110. DOI: 10.1016/J.Jcrysgro.2018.08.007 |
0.607 |
|
| 2017 |
Yang Y, Guo JQ, Raghothamachar B, Dudley M, Chung GY, Sanchez E, Manning I. Resolving the Discrepancy between Observed and Calculated Penetration Depths in Grazing Incidence X-Ray Topography of 4H-SiC Wafers Materials Science Forum. 897: 209-213. DOI: 10.4028/Www.Scientific.Net/Msf.897.209 |
0.706 |
|
| 2017 |
Guo J, Yang Y, Raghothamachar B, Kim T, Dudley M, Kim J. Understanding the microstructures of triangular defects in 4H-SiC homoepitaxial Journal of Crystal Growth. 480: 119-125. DOI: 10.1016/J.Jcrysgro.2017.10.015 |
0.672 |
|
| 2017 |
Yang Y, Guo J, Goue OY, Kim JG, Raghothamachar B, Dudley M, Chung G, Sanchez E, Manning I. Penetration Depth and Defect Image Contrast Formation in Grazing-Incidence X-ray Topography of 4H-SiC Wafers Journal of Electronic Materials. 47: 1218-1222. DOI: 10.1007/S11664-017-5863-4 |
0.71 |
|
| 2017 |
Yang Y, Guo J, Raghothamachar B, Chan X, Kim T, Dudley M. Characterization of Strain Due to Nitrogen Doping Concentration Variations in Heavy Doped 4H-SiC Journal of Electronic Materials. 47: 938-943. DOI: 10.1007/S11664-017-5846-5 |
0.664 |
|
| 2017 |
Guo J, Yang Y, Raghothamachar B, Dudley M, Stoupin S. Mapping of Lattice Strain in 4H-SiC Crystals by Synchrotron Double-Crystal X-ray Topography Journal of Electronic Materials. 47: 903-909. DOI: 10.1007/S11664-017-5789-X |
0.667 |
|
| 2016 |
Powell AR, Sumakeris JJ, Khlebnikov Y, Paisley MJ, Leonard RT, Deyneka E, Gangwal S, Ambati J, Tsevtkov V, Seaman J, McClure A, Horton C, Kramarenko O, Sakhalkar V, O’Loughlin M, ... ... Dudley M, et al. Bulk growth of large area SiC crystals Materials Science Forum. 858: 5-10. DOI: 10.4028/Www.Scientific.Net/Msf.858.5 |
0.485 |
|
| 2016 |
Gao YQ, Zhang HY, Zong YM, Wang HH, Guo JQ, Raghothamachar B, Dudley M, Wang XJ. 150 mm 4H-SiC substrate with low defect density Materials Science Forum. 858: 41-44. DOI: 10.4028/Www.Scientific.Net/Msf.858.41 |
0.712 |
|
| 2016 |
Sumakeris JJ, Leonard RT, Deyneka E, Khlebnikov Y, Powell AR, Seaman J, Paisley MJ, Tsvetkov V, Guo J, Yang Y, Dudley M, Balkas E. Dislocation characterization in 4H-SiC crystals Materials Science Forum. 858: 393-396. DOI: 10.4028/Www.Scientific.Net/Msf.858.393 |
0.52 |
|
| 2016 |
Ellison A, Sörman E, Sundqvist B, Magnusson B, Yang Y, Guo J, Goue O, Raghothamachar B, Dudley M. Mapping of threading screw dislocations in 4H n-type SiC wafers Materials Science Forum. 858: 376-379. DOI: 10.4028/Www.Scientific.Net/Msf.858.376 |
0.645 |
|
| 2016 |
Quast J, Dudley M, Guo J, Hansen D, Manning I, Mueller S, Raghothamachar B, Sanchez E, Whiteley C, Yang Y. Post-growth micropipe formation in 4H-SiC Materials Science Forum. 858: 367-370. DOI: 10.4028/Www.Scientific.Net/Msf.858.367 |
0.636 |
|
| 2016 |
Goue OY, Yang Y, Guo J, Raghothamachar B, Dudley M, Hosteller JL, Myers Ward RL, Klein PB, Gaskill DK. Correlation of lifetime mapping of 4H-SiC epilayers with structural defects using synchrotron X-ray topography Materials Science Forum. 858: 297-300. DOI: 10.4028/Www.Scientific.Net/Msf.858.297 |
0.686 |
|
| 2016 |
Guo JQ, Yang Y, Wu F, Sumakeris JJ, Leonard RT, Goue OY, Raghothamachar B, Dudley M. Using ray tracing simulations for direct determination of burgers vectors of threading mixed dislocations in 4H-SiC c-plane wafers grown by PVT method Materials Science Forum. 858: 15-18. DOI: 10.4028/Www.Scientific.Net/Msf.858.15 |
0.717 |
|
| 2016 |
Yang Y, Guo J, Goue O, Raghothamachar B, Dudley M, Chung G, Sanchez E, Quast J, Manning I, Hansen D. Synchrotron X-ray topography analysis of double shockley stacking faults in 4H-SiC wafers Materials Science Forum. 858: 105-108. DOI: 10.4028/Www.Scientific.Net/Msf.858.105 |
0.642 |
|
| 2016 |
Dudley M, Wang H, Guo J, Yang Y, Raghothamachar B, Zhang J, Thomas B, Chung G, Sanchez EK, Hansen D, Mueller SG. Current Status of the Quality of 4H-SiC Substrates and Epilayers for
Power Device Applications Mrs Advances. 1: 91-102. DOI: 10.1557/Adv.2016.63 |
0.671 |
|
| 2016 |
Yang Y, Guo J, Goue OY, Raghothamachar B, Dudley M, Chung G, Sanchez E, Maning I. Investigation of penetration depth and defect image contrast formation in grazing incidence X-ray topography of 4H-SiC wafers Ecs Transactions. 75: 239-246. DOI: 10.1149/07512.0239ecst |
0.667 |
|
| 2016 |
Goue OY, Guo J, Yang Y, Raghothamachar B, Dudley M. Study of minority carrier lifetime killer by synchrotron X-ray topography Ecs Transactions. 75: 215-231. DOI: 10.1149/07512.0215ecst |
0.571 |
|
| 2016 |
Guo J, Yang Y, Goue GY, Raghothamachar B, Dudley M. Study on the role of thermal stress on prismatic slip of dislocations in 4H-SiC crystals grown by PVT method Ecs Transactions. 75: 163-168. DOI: 10.1149/07512.0163ecst |
0.649 |
|
| 2016 |
Colli A, Attenkofer K, Raghothamachar B, Dudley M. Synchrotron X-Ray Topography for Encapsulation Stress/Strain and Crack Detection in Crystalline Silicon Modules Ieee Journal of Photovoltaics. 6: 1387-1389. DOI: 10.1109/Jphotov.2016.2585022 |
0.639 |
|
| 2016 |
Stoupin S, Raghothamachar B, Dudley M, Liu Z, Trakhtenberg E, Lang K, Goetze K, Sullivan J, Macrander A. Projection x-ray topography system at 1-BM x-ray optics test beamline at the advanced photon source Aip Conference Proceedings. 1741. DOI: 10.1063/1.4952938 |
0.629 |
|
| 2016 |
Padavala B, Frye CD, Wang X, Ding Z, Chen R, Dudley M, Raghothamachar B, Lu P, Flanders BN, Edgar JH. Epitaxy of Boron Phosphide on Aluminum Nitride(0001)/Sapphire Substrate Crystal Growth and Design. 16: 981-987. DOI: 10.1021/Acs.Cgd.5B01525 |
0.602 |
|
| 2016 |
Padavala B, Frye C, Ding Z, Chen R, Dudley M, Raghothamachar B, Khan N, Edgar J. Corrigendum to “Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide” [Solid State Sci. 47 (2015) 55–60] Solid State Sciences. 53: 83. DOI: 10.1016/J.Solidstatesciences.2016.02.007 |
0.578 |
|
| 2016 |
Yang Y, Guo J, Goue O, Raghothamachar B, Dudley M, Chung G, Sanchez E, Quast J, Manning I, Hansen D. Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H-SiC wafers Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2016.01.013 |
0.618 |
|
| 2016 |
Guo J, Yang Y, Wu F, Sumakeris J, Leonard R, Goue O, Raghothamachar B, Dudley M. Synchrotron X-ray topographic study on nature of threading mixed dislocations in 4H-SiC crystals grown by PVT method Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.12.028 |
0.778 |
|
| 2016 |
Guo J, Yang Y, Raghothamachar B, Kim J, Dudley M, Chung G, Sanchez E, Quast J, Manning I. Prismatic Slip in PVT-Grown 4H-SiC Crystals Journal of Electronic Materials. 46: 2040-2044. DOI: 10.1007/S11664-016-5118-9 |
0.688 |
|
| 2016 |
Yang Y, Guo J, Goue O, Raghothamachar B, Dudley M, Chung G, Sanchez E, Quast J, Manning I, Hansen D. Effect of Doping Concentration Variations in PVT-Grown 4H-SiC Wafers Journal of Electronic Materials. 1-5. DOI: 10.1007/S11664-016-4378-8 |
0.643 |
|
| 2016 |
Guo J, Yang Y, Wu F, Sumakeris J, Leonard R, Goue O, Raghothamachar B, Dudley M. Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC Grown by PVT Method Journal of Electronic Materials. 1-6. DOI: 10.1007/S11664-015-4317-0 |
0.776 |
|
| 2016 |
Goue OY, Raghothamachar B, Yang Y, Guo J, Dudley M, Kisslinger K, Trunek AJ, Neudeck PG, Spry DJ, Woodworth AA. Study of Defect Structures in 6H-SiC a/m-Plane Pseudofiber Crystals Grown by Hot-Wall CVD Epitaxy Journal of Electronic Materials. 45: 2078-2086. DOI: 10.1007/S11664-015-4185-7 |
0.725 |
|
| 2015 |
Wu FZ, Wang HH, Yang Y, Guo JQ, Raghothamachar B, Dudley M, Mueller SG, Chung G, Sanchez EK, Hansen D, Loboda MJ, Zhang LH, Su D, Kisslinger K, Stach E. Stacking fault formation via 2D nucleation in PVT grown 4H-SiC Materials Science Forum. 821: 85-89. DOI: 10.4028/Www.Scientific.Net/Msf.821-823.85 |
0.671 |
|
| 2015 |
Gao YQ, Zhang HY, Song J, Song S, Liang QR, Ning M, Gao C, Wang XJ, Zong YM, Wang HH, Dudley M. High quality 100 mm 4H-SiC substrate Materials Science Forum. 821: 51-55. DOI: 10.4028/Www.Scientific.Net/Msf.821-823.51 |
0.419 |
|
| 2015 |
Wang H, Wu F, Yang Y, Guo J, Raghothamachar B, Venkatesh TA, Dudley M, Zhang J, Chung G, Thomas B, Sanchez EK, Mueller SG, Hansen D, Loboda MJ. Studies of the origins of half loop arrays and interfacial dislocations observed in homoepitaxial layers of 4H-SiC Materials Science Forum. 821: 319-322. DOI: 10.4028/Www.Scientific.Net/Msf.821-823.319 |
0.738 |
|
| 2015 |
Wang H, Dudley M, Zhang J, Thomas B, Chung G, Sanchez EK, Hansen D, Mueller SG. X-ray Topography studies of relaxation during the homo-epitaxy of 4H-SiC Materials Research Society Symposium Proceedings. 1741: 29-40. DOI: 10.1557/Opl.2015.73 |
0.502 |
|
| 2015 |
Yang Y, Guo J, Goue OY, Wang H, Wu F, Raghothamachar B, Dudley M, Chung G, Quast J, Sanchez E, Manning I, Hansen D. Double shockley stacking fault formation in higher doping regions of PVT-grown 4H-SiC wafers Ecs Transactions. 69: 39-46. DOI: 10.1149/06911.0039ecst |
0.582 |
|
| 2015 |
Guo J, Yang Y, Wu F, Goue OY, Raghothamachar B, Dudley M. Direct determination of burgers vectors of threading mixed dislocations in 4h-SiC c-plane wafers grown By PVT method Ecs Transactions. 69: 33-38. DOI: 10.1149/06911.0033ecst |
0.65 |
|
| 2015 |
Shenai K, Raghothamachar B, Dudley M, Christou A. In-situ characterization of defect dynamics in 4H-SiC power diodes under high-voltage stressing Ecs Transactions. 66: 205-216. DOI: 10.1149/06601.0205ecst |
0.597 |
|
| 2015 |
Padavala B, Frye CD, Ding Z, Chen R, Dudley M, Raghothamachar B, Khan N, Edgar JH. Preparation, properties, and characterization of boron phosphide films on 4H- and 6H-silicon carbide Solid State Sciences. 47: 55-60. DOI: 10.1016/J.Solidstatesciences.2015.03.002 |
0.632 |
|
| 2014 |
Wang HH, Wu FZ, Byrapa SY, Yang Y, Raghothamachar B, Dudley M, Chung G, Zhang J, Thomas B, Sanchez EK, Mueller SG, Hansen DM, Loboda MJ. Study of v and y shape frank-type stacking faults formation in 4H-SiC Epilayer Materials Science Forum. 778: 332-337. DOI: 10.4028/Www.Scientific.Net/Msf.778-780.332 |
0.676 |
|
| 2014 |
Wang HH, Wu FZ, Dudley M, Raghothamachar B, Chung G, Zhang J, Thomas B, Sanchez EK, Mueller SG, Hansen DM, Loboda MJ. Measurement of critical thickness for the formation of interfacial dislocations and half loop arrays in 4H-SiC epilayer via X-ray topography Materials Science Forum. 778: 328-331. DOI: 10.4028/Www.Scientific.Net/Msf.778-780.328 |
0.687 |
|
| 2014 |
Guo J, Raghothamachar B, Dudley M, Carvajal JJ, Butt A, Pujol MC, Sole RM, Massons J, Aguilo M, Diaz F. Effect of doping on crystalline quality of rubidium titanyl phosphate (RTP) crystals grown by the TSSG method Materials Research Society Symposium Proceedings. 1698. DOI: 10.1557/Opl.2014.899 |
0.679 |
|
| 2014 |
Zhang J, Hansen DM, Torres VM, Thomas B, Chung G, Makoto H, Manning I, Quast J, Whiteley C, Sanchez EK, Mueller S, Loboda MJ, Wang H, Wu F, Dudley M. Defect reduction paths in SiC epitaxy Materials Research Society Symposium Proceedings. 1693. DOI: 10.1557/Opl.2014.579 |
0.586 |
|
| 2014 |
Wu F, Wang H, Raghothamachar B, Dudley M, Mueller SG, Chung G, Sanchez EK, Hansen D, Loboda MJ. Direct observation of stacking fault nucleation from deflected threading dislocations with burgers vector c+a in PVT grown 4H-SiC Materials Research Society Symposium Proceedings. 1693. DOI: 10.1557/Opl.2014.564 |
0.717 |
|
| 2014 |
Goue OY, Raghothamachar B, Dudley M, Trunek AJ, Neudeck PG, Woodworth AA, Spry DJ. Structural Characterization of Lateral-grown 6H-SiC a/m-plane seed crystals by hot wall CVD epitaxy Materials Research Society Symposium Proceedings. 1693. DOI: 10.1557/Opl.2014.563 |
0.724 |
|
| 2014 |
Wang H, Wu F, Yang Y, Guo J, Raghothamachar B, Dudley M, Zhang J, Chung G, Thomas B, Sanchez EK, Mueller SG, Hansen D, Loboda MJ. Studies of relaxation processes and basal plane dislocations in CVD grown homoepitaxial layers of 4H-SiC Ecs Transactions. 64: 213-222. DOI: 10.1149/06407.0213ecst |
0.65 |
|
| 2014 |
Wang H, Wu F, Yang Y, Guo J, Raghothamachar B, Dudley M, Zhang J, Chung G, Thomas B, Sanchez EK, Mueller SG, Hansen D, Loboda MJ. Characterization of defects in SiC substrates and epilayers Ecs Transactions. 64: 145-152. DOI: 10.1149/06407.0145ecst |
0.652 |
|
| 2014 |
Wang H, Wu F, Yang Y, Guo J, Raghothamachar B, Dudley M, Zhang J, Chung G, Thomas B, Sanchez EK, Mueller SG, Hansen D, Loboda MJ. Stacking fault formation during homo-Epitaxy of 4H-SiC Ecs Transactions. 64: 125-131. DOI: 10.1149/06407.0125ecst |
0.63 |
|
| 2014 |
Wu F, Wang H, Raghothamachar B, Dudley M, Mueller SG, Chung G, Sanchez EK, Hansen D, Loboda MJ, Zhang L, Su D, Kisslinger K, Stach E. Erratum: “A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images” [J. Appl. Phys. 116, 104905 (2014)] Journal of Applied Physics. 116: 169901. DOI: 10.1063/1.4899320 |
0.692 |
|
| 2014 |
Wu F, Wang H, Raghothamachar B, Dudley M, Mueller SG, Chung G, Sanchez EK, Hansen D, Loboda MJ, Zhang L, Su D, Kisslinger K, Stach E. A method to determine fault vectors in 4H-SiC from stacking sequences observed on high resolution transmission electron microscopy images Journal of Applied Physics. 116. DOI: 10.1063/1.4895136 |
0.702 |
|
| 2014 |
Wang H, Wu F, Byrappa S, Raghothamachar B, Dudley M, Wu P, Zwieback I, Souzis A, Ruland G, Anderson T. Synchrotron topography studies of the operation of double-ended Frank-Read partial dislocation sources in 4H-SiC Journal of Crystal Growth. 401: 423-430. DOI: 10.1016/J.Jcrysgro.2014.01.078 |
0.821 |
|
| 2014 |
Woodworth AA, Neudeck PG, Sayir A, Solá F, Dudley M, Raghothamachar B. Investigation of single crystal 4H-SiC growth by the Solvent-Laser Heated Floating Zone technique Journal of Crystal Growth. 392: 34-40. DOI: 10.1016/J.Jcrysgro.2014.01.050 |
0.64 |
|
| 2014 |
Wu F, Wang H, Raghothamachar B, Dudley M, Chung G, Zhang J, Thomas B, Sanchez EK, Mueller SG, Hansen D, Loboda MJ, Zhang L, Su D, Kisslinger K, Stach E. Characterization of V-shaped Defects in 4H-SiC Homoepitaxial Layers Journal of Electronic Materials. DOI: 10.1007/S11664-014-3536-0 |
0.761 |
|
| 2014 |
Wang H, Dudley M, Wu F, Yang Y, Raghothamachar B, Zhang J, Chung G, Thomas B, Sanchez EK, Mueller SG, Hansen D, Loboda MJ. Studies of the Origins of Half-Loop Arrays and Interfacial Dislocations Observed in Homoepitaxial Layers of 4H-SiC Journal of Electronic Materials. DOI: 10.1007/s11664-014-3497-3 |
0.653 |
|
| 2014 |
Zhou T, Raghothamachar B, Wu F, Dalmau R, Moody B, Craft S, Schlesser R, Dudley M, Sitar Z. Characterization of threading dislocations in PVT-grown ALN substrates via x-ray topography and ray tracing simulation Journal of Electronic Materials. 43: 838-842. DOI: 10.1007/S11664-013-2968-2 |
0.767 |
|
| 2014 |
Padavala B, Frye C, Edgar JH, Ding Z, Chen R, Dudley M, Raghothamachar B. Crystal growth and characterization of cubic boron phosphide on silicon carbide Materials Science and Technology Conference and Exhibition 2014, Ms and T 2014. 3: 1575-1581. |
0.639 |
|
| 2014 |
Padavala B, Frye C, Edgar JH, Ding Z, Chen R, Dudley M, Raghothamachar B, Schmitt J. Heteroepitaxial growth of boron phosphide on 3C-SiC/Si(100) and AlN/sapphire(0001) substrates Materials Science and Technology Conference and Exhibition 2014, Ms and T 2014. 3: 1583-1590. |
0.594 |
|
| 2013 |
Raghothamachar B, Yang Y, Dalmau R, Moody B, Craft S, Schlesser R, Dudley M, Sita Z. Defect generation mechanisms in PVT-grown AlN single crystal boules Materials Science Forum. 740: 91-94. DOI: 10.4028/Www.Scientific.Net/Msf.740-742.91 |
0.687 |
|
| 2013 |
Wu F, Dudley M, Wang H, Byrappa S, Sun S, Raghothamachar B, Sanchez EK, Chung G, Hansen D, Mueller SG, Loboda MJ. The nucleation and propagation of threading dislocations with c-component of burgers vector in PVT-grown 4H-SiC Materials Science Forum. 740: 217-220. DOI: 10.4028/Www.Scientific.Net/Msf.740-742.217 |
0.653 |
|
| 2013 |
Zhou T, Raghothamachar B, Wu F, Dudley M. Grazing incidence X-ray topographic studies of threading dislocations in hydrothermal grown ZnO single crystal substrates Materials Research Society Symposium Proceedings. 1494: 121-126. DOI: 10.1557/Opl.2013.261 |
0.785 |
|
| 2013 |
Wang H, Sun S, Dudley M, Byrappa S, Wu F, Raghothamachar B, Chung G, Sanchez EK, Mueller SG, Hansen D, Loboda MJ. Quantitative comparison between dislocation densities in offcut 4H-SiC wafers measured using synchrotron X-ray topography and molten KOH etching Journal of Electronic Materials. 42: 794-798. DOI: 10.1007/S11664-013-2527-X |
0.83 |
|
| 2013 |
Wu F, Wang H, Byrappa S, Raghothamachar B, Dudley M, Wu P, Xu X, Zwieback I. Characterization and formation mechanism of six pointed star-type stacking faults in 4H-SiC Journal of Electronic Materials. 42: 787-793. DOI: 10.1007/S11664-012-2379-9 |
0.816 |
|
| 2012 |
Byrappa S, Wu F, Wang H, Raghothamachar B, Choi G, Sun S, Dudley M, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Deflection of threading dislocations with burgers vector c/c+a observed in 4H-SiC PVT-Grown substrates with associated stacking faults Materials Science Forum. 717: 347-350. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.347 |
0.61 |
|
| 2012 |
Wu F, Wang H, Byrappa S, Raghothamachar B, Dudley M, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Synchrotron X-ray topography studies of the propagation and post-growth mutual interaction of threading growth dislocations with C-component of Burgers vector in PVT-Grown 4H-SiC Materials Science Forum. 717: 343-346. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.343 |
0.655 |
|
| 2012 |
Trunek AJ, Neudeck PG, Woodworth AA, Powell JA, Spry DJ, Raghothamachar B, Dudley M. Lateral growth expansion of 4H/6H-SiC m-plane pseudo fiber crystals by hot wall CVD epitaxy Materials Science Forum. 717: 33-36. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.33 |
0.654 |
|
| 2012 |
Wang H, Byrappa S, Wu F, Raghothamachar B, Dudley M, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Basal plane dislocation multiplication via the hopping Frank-Read source mechanism and observations of prismatic glide in 4H-SiC Materials Science Forum. 717: 327-330. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.327 |
0.739 |
|
| 2012 |
Raghothamachar B, Dalmau R, Moody B, Craft S, Schlesser R, Xie J, Collazo R, Dudley M, Sitar Z. Low defect density bulk AlN substrates for high performance electronics and optoelectronics Materials Science Forum. 717: 1287-1290. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.1287 |
0.721 |
|
| 2012 |
Woodworth AA, Sayir A, Neudeck PG, Raghothamachar B, Dudley M. Characterization of 4H 〈000-1〉 silicon carbide films grown by solvent-laser heated floating zone Materials Research Society Symposium Proceedings. 1433: 113-118. DOI: 10.1557/Opl.2012.1149 |
0.683 |
|
| 2012 |
Wang H, Wu F, Byrappa S, Shun S, Raghothamachar B, Dudley M, Sanchez EK, Chung G, Hansen D, Mueller SG, Loboda MJ. Combined application of section and projection topography to defect analysis in PVT-grown 4H-SiC Materials Research Society Symposium Proceedings. 1433: 71-76. DOI: 10.1557/Opl.2012.1142 |
0.828 |
|
| 2012 |
Wu F, Byrappa S, Wang H, Chen Y, Raghothamachar B, Dudley M, Sanchez EK, Chung G, Hansen D, Mueller SG, Loboda MJ. Simulation of grazing-incidence synchrotron X-ray topographic images of threading c+a dislocations in 4H-SiC Materials Research Society Symposium Proceedings. 1433: 41-46. DOI: 10.1557/Opl.2012.1050 |
0.831 |
|
| 2012 |
Wang H, Wu F, Byrappa S, Sun S, Raghothamachar B, Dudley M, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC Applied Physics Letters. 100. DOI: 10.1063/1.4704679 |
0.824 |
|
| 2012 |
Zhang Y, Chen H, Dudley M, Edgar JH, Gong Y, Bakalova S, Kuball M, Zhang L, Su D, Zhu Y. Growth mechanisms and defect structures of B 12As 2 epilayers grown on 4 H-SiC substrates Journal of Crystal Growth. 352: 3-8. DOI: 10.1016/J.Jcrysgro.2011.12.065 |
0.461 |
|
| 2012 |
Müller SG, Sanchez EK, Hansen DM, Drachev RD, Chung G, Thomas B, Zhang J, Loboda MJ, Dudley M, Wang H, Wu F, Byrappa S, Raghothamachar B, Choi G. Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications Journal of Crystal Growth. 352: 39-42. DOI: 10.1016/J.Jcrysgro.2011.10.050 |
0.825 |
|
| 2011 |
Dudley M, Wang H, Wu F, Byrappa S, Raghothamachar B, Choi G, Sanchez EK, Hansen D, Drachev R, Mueller SG, Loboda MJ. Formation mechanism of stacking faults in PVT 4H-SiC created by deflection of threading dislocations with burgers vector c+a Materials Science Forum. 679: 269-272. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.269 |
0.698 |
|
| 2011 |
Whiteley CE, Mayo A, Edgar JH, Dudley M, Zhang Y. Defect-selective etching of icosahedral boron arsenide (B 12As 2) crystals in molten potassium hydroxide Materials Research Society Symposium Proceedings. 1307: 79-85. DOI: 10.1557/Opl.2011.504 |
0.475 |
|
| 2011 |
Whiteley CE, Zhang Y, Mayo A, Edgar JH, Gong Y, Kuball M, Dudley M. Solution growth and characterization of icosahedral boron arsenide (B 12As 2) Materials Research Society Symposium Proceedings. 1307: 66-72. DOI: 10.1557/Opl.2011.502 |
0.457 |
|
| 2011 |
Zhang Y, Chen H, Dudley M, Edgar JH, Gong Y, Bakalova S, Kuball M, Zhang L, Su D, Zhu Y. Elimination of degenerate epitaxy in the growth of high quality B 12As 2 single crystalline epitaxial films Materials Research Society Symposium Proceedings. 1307: 15-20. DOI: 10.1557/Opl.2011.316 |
0.445 |
|
| 2011 |
Carvajal JJ, Ragothamachar B, Sarkar V, Mateos X, Dudley M, Díaz F, Aguiló M. Synchrotron topography of (Nb,Yb):RbTiOPO4 single crystals and related materials Acta Crystallographica Section A. 67: 457-457. DOI: 10.1107/S0108767311088490 |
0.371 |
|
| 2010 |
Dudley M, Zhang N, Zhang Y, Raghothamachar B, Sanchez EK. Nucleation of c-axis screw dislocations at substrate surface damage during 4H-Silicon carbide homo-epitaxy Materials Science Forum. 645: 295-298. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.295 |
0.647 |
|
| 2010 |
Dudley M, Zhang N, Zhang Y, Raghothamachar B, Byrappa S, Choi G, Sanchez EK, Hansen D, Drachev R, Loboda MJ. Characterization of 100 mm diameter 4H-Silicon carbide crystals with extremely low basal plane dislocation density Materials Science Forum. 645: 291-294. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.291 |
0.841 |
|
| 2010 |
Zhang Y, Chen H, Dudley M, Zhang Y, Edgar J, Gong Y, Bakalova S, Kuball M, Zhang L, Su D, Kisslinger K, Zhu Y. Mechanism for Improved Quality B12As2 Epitaxial Films on (0001) 4H-SiC Substrates by Tilting toward [1-100] Direction Mrs Proceedings. 1246. DOI: 10.1557/Proc-1246-B04-02 |
0.456 |
|
| 2010 |
Dudley M, Byrappa S, Wang H, Wu F, Zhang Y, Raghothamachar B, Choi G, Sanchez E, Hansen D, Drachev R, Loboda M. Analysis of Dislocation Behavior in Low Dislocation Density, PVT-Grown, Four-Inch Silicon Carbide Single Crystals Mrs Proceedings. 1246. DOI: 10.1557/Proc-1246-B02-02 |
0.835 |
|
| 2010 |
Muller EM, Smedley J, Raghothamachar B, Gaowei M, Keister JW, Ben-Zvi I, Dudley M, Wu Q. Electronic impact of inclusions in diamond Materials Research Society Symposium Proceedings. 1203: 217-222. DOI: 10.1557/Proc-1203-J17-19 |
0.654 |
|
| 2010 |
Zhang Y, Chen H, Zhang N, Dudley M, Gong Y, Kuball M, Xu Z, Edgar JH, Zhang L, Zhu Y. Origins of twinned microstructures in B12As2 epilayers grown on (0001) 6H-SiC and their influence on physical properties Materials Research Society Symposium Proceedings. 1164: 121-127. DOI: 10.1557/Proc-1164-L09-10 |
0.462 |
|
| 2010 |
Zhang Y, Edgar JH, Plummer J, Whiteley C, Chen H, Dudley M, Gong Y, Gray J, Kuball M. Growth of boron carbide crystals from a copper flux Materials Research Society Symposium Proceedings. 1164: 67-72. DOI: 10.1557/Proc-1164-L06-02 |
0.495 |
|
| 2010 |
Dhanaraj G, Raghothamachar B, Dudley M. X-ray characterisation of zinc oxide (ZnO) single crystal substrates Materials Research Innovations. 14: 34-37. DOI: 10.1179/143307510X12599329343565 |
0.71 |
|
| 2010 |
Bolaños W, Segura M, Cugat J, Carvajal JJ, Mateos X, Pujol MC, Solé R, Díaz F, Aguiló M, Griebner U, Petrov V, Lifante G, Raghothamachar B, Dudley M. Crystal growth and characterization of epitaxial layers of laser and nonlinear optical materials for thin-disk and waveguide laser applications Optical Materials. 32: 1380-1384. DOI: 10.1016/J.Optmat.2010.03.015 |
0.607 |
|
| 2010 |
Zhang Y, Chen H, Choi G, Raghothamachar B, Dudley M, Edgar JH, Grasza K, Tymicki E, Zhang L, Su D, Zhu Y. Nucleation mechanism of 6H-SiC polytype inclusions inside 15R-SiC crystals Journal of Electronic Materials. 39: 799-804. DOI: 10.1007/S11664-010-1105-8 |
0.666 |
|
| 2009 |
Zhang N, Chen Y, Sanchez EK, Black DR, Dudley M. The Effect of 4H-SiC Substrate Surface Scratches on Chemical Vapor Deposition Grown Homo-Epitaxial Layer Quality Materials Science Forum. 109-112. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.109 |
0.476 |
|
| 2009 |
Raghothamachar B, Sarkar V, Noveski V, Dudley M, Sharan S. A Novel X-ray Diffraction –based Technique for Complete Stress State Mapping of Packaged Silicon Dies Mrs Proceedings. 1158. DOI: 10.1557/Proc-1158-F01-07 |
0.719 |
|
| 2009 |
Lu P, Collazo R, Dalmau RF, Durkaya G, Dietz N, Raghothamachar B, Dudley M, Sitar Z. Seeded growth of AlN bulk crystals in m- and c-orientation Journal of Crystal Growth. 312: 58-63. DOI: 10.1016/J.Jcrysgro.2009.10.008 |
0.679 |
|
| 2008 |
Chen Y, Balaji R, Dudley M, Murthy M, Maximenko SI, Freitas JA. Mapping of Defects in Large-Area Silicon Carbide Wafers via Photoluminescence and its Correlation with Synchrotron White Beam X-ray Topography Materials Science Forum. 549-552. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.549 |
0.423 |
|
| 2008 |
Chen Y, Huang XR, Zhang N, Dudley M, Caldwell JD, Liu KX, Stahlbush RE. Synchrotron X-Ray Topographic Studies of Recombination Activated Shockley Partial Dislocations in 4H-Silicon Carbide Epitaxial Layers Materials Science Forum. 357-360. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.357 |
0.521 |
|
| 2008 |
Wu P, Yoganathan M, Zwieback I, Chen Y, Dudley M. Characterization of Dislocations and Micropipes in 4H n+ SiC Substrates Materials Science Forum. 333-336. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.333 |
0.553 |
|
| 2008 |
Kamata I, Nagano M, Tsuchida H, Chen Y, Dudley M. High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers Materials Science Forum. 305-308. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.305 |
0.435 |
|
| 2008 |
Chen Y, Zhang N, Huang XR, Black DR, Dudley M. Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer Materials Science Forum. 301-304. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.301 |
0.455 |
|
| 2008 |
Chen Y, Huang X, Dhanaraj G, Dudley M, Sanchez EK, Macmillan MF. Sense Determination of c-Axis Screw Dislocations in 4H-SiC Materials Science Forum. 297-300. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.297 |
0.405 |
|
| 2008 |
Dudley M, Chen Y, Huang XR, Ma RH. Aspects of Dislocation Behavior in SiC Materials Science Forum. 261-266. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.261 |
0.504 |
|
| 2008 |
MacMillan MF, Sanchez EK, Dudley M, Chen Y, Loboda MJ. Micropipe Dissociation through Thick n+ Buffer Layer Growth Materials Science Forum. 167-170. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.167 |
0.361 |
|
| 2008 |
Chow CY, Raghothamachar B, Carvajal JJ, Chen H, Dudley M. Synthesis of GaN Nanostructures at Low Temperatures by Chemical Vapor Deposition Mrs Proceedings. 1080. DOI: 10.1557/Proc-1080-O08-01 |
0.542 |
|
| 2008 |
Chen H, Wang G, Dudley M, Xu Z, Edgar JH, Batten T, Kuball M, Zhang L, Zhu Y. Characterization and Growth Mechanism of B 12 As 2 Epitaxial Layers Grown on (1-100) 15R-SiC Mrs Proceedings. 1069. DOI: 10.1557/Proc-1069-D08-03 |
0.372 |
|
| 2008 |
Zhang N, Chen Y, Sanchez E, MacMillan MF, Dudley M. Stress Mapping of SiC Wafers by Synchrotron White Beam X-ray Reticulography Mrs Proceedings. 1069. DOI: 10.1557/Proc-1069-D07-07 |
0.395 |
|
| 2008 |
Chen Y, Zhang N, Huang X, Caldwell JD, Liu KX, Stahlbush RE, Dudley M. Determination of the Core-structure of Shockley Partial Dislocations in 4H-SiC Mrs Proceedings. 1069. DOI: 10.1557/Proc-1069-D03-03 |
0.377 |
|
| 2008 |
Chen Y, Huang X, Zhang N, Dhanaraj G, Sanchez E, MacMillan MF, Dudley M. Studies of c-Axis Threading Screw Dislocations in Hexagonal SiC Mrs Proceedings. 1069. DOI: 10.1557/Proc-1069-D02-03 |
0.371 |
|
| 2008 |
Chen H, Wang G, Dudley M, Xu Z, Edgar JH, Batten T, Kuball M, Zhang L, Zhu Y. Single-crystalline B12As2 on m-plane (1100) 15R-SiC Applied Physics Letters. 92. DOI: 10.1063/1.2945635 |
0.435 |
|
| 2008 |
Su CH, Lehoczky SL, Raghothamachar B, Dudley M. Crystal growth and characterization of CdTe grown by vertical gradient freeze Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 147: 35-42. DOI: 10.1016/J.Mseb.2007.11.005 |
0.665 |
|
| 2008 |
Chen Y, Zhang N, Dudley M, Caldwell JD, Liu KX, Stahlbush RE, Huang X, Macrander AT, Black DR. Investigation of Electron-Hole Recombination-Activated Partial Dislocations and Their Behavior in 4H-SiC Epitaxial Layers Journal of Electronic Materials. 37: 706-712. DOI: 10.1007/S11664-007-0328-9 |
0.522 |
|
| 2008 |
Chen Y, Dudley M, Sanchez EK, MacMillan MF. Simulation of Grazing-Incidence Synchrotron White Beam X-ray Topographic Images of Micropipes in 4H-SiC and Determination of Their Dislocation Senses Journal of Electronic Materials. 37: 713-720. DOI: 10.1007/S11664-007-0314-2 |
0.394 |
|
| 2007 |
Chen Y, Dhanaraj G, Vetter WM, Ma RH, Dudley M. Behavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide Materials Science Forum. 231-234. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.231 |
0.457 |
|
| 2007 |
Kirchner KW, Jones KA, Derenge MA, Dudley M, Powell AR. Mosaicity and Wafer Bending in SiC Wafers as Measured by Double and Triple Crystal X-Ray Rocking Curve and Peak Position Maps Materials Science Forum. 213-218. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.213 |
0.456 |
|
| 2007 |
Wang S, Raghothamachar B, Dudley M, Ren Z, Han J, Timmerman AG. Sublimation Growth and Defect Characterization of AlN Single Crystals Mrs Proceedings. 1040. DOI: 10.1557/Proc-1040-Q03-01 |
0.678 |
|
| 2007 |
Chen Y, Dudley M, Liu KX, Stahlbush RE. Interaction between Recombination Enhanced Dislocation Glide Process Activated Basal Stacking Faults and Threading Dislocations in 4H-Silicon Carbide Epitaxial Layers Mrs Proceedings. 994. DOI: 10.1557/Proc-0994-F12-03 |
0.489 |
|
| 2007 |
Park J, Bai J, Curtin M, Adekore B, Cheng Z, Carroll M, Dudley M, Lochtefeld A. Defect Reduction and Its Mechanism of Selective Ge Epitaxy in Trenches on Si(001) Substrates Using Aspect Ratio Trapping Mrs Proceedings. 994. DOI: 10.1557/Proc-0994-F10-05 |
0.407 |
|
| 2007 |
Chen H, Wang G, Dudley M, Zhang L, Zhu Y, Zhang Y, Edgar JH, Kuball M. Defect structures of B12As2 epilayers grown on c-plane and a-plane 6H-SiC substrates Materials Research Society Symposium Proceedings. 994: 29-34. DOI: 10.1557/Proc-0994-F03-01 |
0.506 |
|
| 2007 |
Gu Z, Edgar JH, Raghothamachar B, Dudley M, Zhuang D, Sitar Z, Coffey DW. Sublimation growth of aluminum nitride on silicon carbide substrate with aluminum nitride-silicon carbide alloy transition layer Journal of Materials Research. 22: 675-680. DOI: 10.1557/Jmr.2007.0077 |
0.679 |
|
| 2007 |
Chen Y, Dudley M. Direct Determination of Dislocation Sense of Closed-Core Threading Screw Dislocations using Synchrotron White Beam X-ray Topography in 4H Silicon Carbide Applied Physics Letters. 91: 141918. DOI: 10.1063/1.2793705 |
0.494 |
|
| 2007 |
Bai J, Park JS, Cheng Z, Curtin M, Adekore B, Carroll M, Lochtefeld A, Dudley M. Study of the defect elimination mechanisms in aspect ratio trapping Ge growth Applied Physics Letters. 90. DOI: 10.1063/1.2711276 |
0.451 |
|
| 2007 |
Wang G, Ji Y, Zhang L, Zhu Y, Gouma PI, Dudley M. Synthesis of molybdenum oxide nanoplatelets during crystallization of the precursor gel from its hybrid nanocomposites Chemistry of Materials. 19: 979-981. DOI: 10.1021/Cm062454M |
0.336 |
|
| 2007 |
Dhanaraj G, Chen Y, Chen H, Cai D, Zhang H, Dudley M. Chemical Vapor Deposition of Silicon Carbide Epitaxial Films and Their Defect Characterization Journal of Electronic Materials. 36: 332-339. DOI: 10.1007/S11664-006-0084-2 |
0.358 |
|
| 2006 |
Raghothamachar B, Dhanaraj G, Bai J, Dudley M. Defect analysis in crystals using X-ray topography. Microscopy Research and Technique. 69: 343-58. PMID 16646013 DOI: 10.1002/Jemt.20290 |
0.688 |
|
| 2006 |
Dhanaraj G, Chen Y, Dudley M, Zhang H. Growth and Surface Morphologies of 6H SiC Bulk and Epitaxial Crystals Materials Science Forum. 67-70. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.67 |
0.515 |
|
| 2006 |
Emorhokpor E, Carlson EP, Wan JW, Weber AD, Basceri C, Jenny JR, Sandhu R, Oliver JD, Burkeen F, Somanchi A, Velidandla V, Orazio F, Blew A, Goorsky MS, Dudley M, et al. Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates Materials Science Forum. 443-446. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.443 |
0.369 |
|
| 2006 |
Vetter WM, Tsuchida H, Kamata I, Dudley M. Simulation of threading edge dislocation images in X-ray topographs of silicon carbide homo-epilayers Materials Science Forum. 411-414. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.411 |
0.493 |
|
| 2006 |
Raghothamachar B, Dalmau R, Dudley M, Schlesser R, Zhuang D, Herro Z, Sitar Z. Structural characterization of bulk AIN single crystals grown from self-seeding and seeding by SiC substrates Materials Science Forum. 527: 1521-1524. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1521 |
0.711 |
|
| 2006 |
Bai J, Huang X, Raghothamachar B, Dudley M, Wagner B, Davis RF, Wu L, Zhu Y. Strain Relaxation in GaN/AlN Films Grown on Vicinal and On-Axis SiC Substrates Materials Science Forum. 1513-1516. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1513 |
0.669 |
|
| 2006 |
Gu Z, Edgar JH, Raghothamachar B, Dudley M, Zhuang D, Sitar Z. The effect of aluminum nitride-silicon carbide alloy buffer layers on the sublimation growth of aluminum nitride on SiC (0001) substrates Materials Science Forum. 527: 1497-1500. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1497 |
0.67 |
|
| 2006 |
Su CH, Lehoczky SL, Li C, Raghothamachar B, Dudley M, Szőke J, Bárczy P. Crystal Growth of CdTe by Gradient Freeze in Universal Multizone Crystallizator (UMC) Materials Science Forum. 508: 117-124. DOI: 10.4028/Www.Scientific.Net/Msf.508.117 |
0.68 |
|
| 2006 |
Chen Y, Chen H, Zhang N, Dudley M, Ma R. Investigation of Low Angle Grain Boundaries in Hexagonal Silicon Carbide Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I07-50 |
0.51 |
|
| 2006 |
Chen H, Raghothamachar B, Vetter W, Dudley M, Wang Y, Skromme B. Effects of Different Defect Types on the Performance of Devices Fabricated on a 4H-SiC Homoepitaxial Layer Mrs Proceedings. 911: 169-174. DOI: 10.1557/Proc-0911-B12-03 |
0.672 |
|
| 2006 |
Chen Y, Dhanaraj G, Dudley M, Zhang H, Ma R, Shishkin Y, Saddow SE. Multiplication of Basal Plane Dislocations via Interaction with c-Axis Threading Dislocations in 4H-SiC Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B09-04 |
0.54 |
|
| 2006 |
Dhanaraj G, Chen Y, Chen H, Vetter WM, Zhang H, Dudley M. Growth Mechanism and Dislocation Characterization of Silicon Carbide Epitaxial Films Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B05-27 |
0.393 |
|
| 2006 |
Chen H, Wang G, Chen Y, Jia X, Bai J, Dudley M. The Formation Mechanism of Carrot Defects in SiC Epifilms Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B05-24 |
0.512 |
|
| 2006 |
Wang X, Dang C, Zhang H, Dudley M. Novel Method for High Speed SiC Vapor Growth Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B05-09 |
0.315 |
|
| 2006 |
Vetter WM, Dudley M. The character of micropipes in silicon carbide crystals Philosophical Magazine. 86: 1209-1225. DOI: 10.1080/14786430500199187 |
0.472 |
|
| 2006 |
Bai J, Dudley M, Sun WH, Wang HM, Khan MA. Reduction of threading dislocation densities in AlN∕sapphire epilayers driven by growth mode modification Applied Physics Letters. 88: 51903. DOI: 10.1063/1.2170407 |
0.419 |
|
| 2006 |
Bai J, Huang X, Dudley M. High-resolution TEM observation of AlN grown on on-axis and off-cut SiC substrates Materials Science in Semiconductor Processing. 9: 180-183. DOI: 10.1016/J.Mssp.2006.01.055 |
0.444 |
|
| 2006 |
Dudley M, Bai J, Huang X, Vetter WM, Dhanaraj G, Raghothamachar B. Synchrotron white beam X-ray topography, transmission electron microscopy and high-resolution X-ray diffraction studies of defects and strain relaxation processes in wide band gap semiconductor crystals and thin films Materials Science in Semiconductor Processing. 9: 315-322. DOI: 10.1016/J.Mssp.2006.01.026 |
0.707 |
|
| 2006 |
Dhanaraj G, Dudley M, Bliss D, Callahan M, Harris M. Growth and Process Induced Dislocations in Zinc Oxide Crystals Journal of Crystal Growth. 297: 74-79. DOI: 10.1016/J.Jcrysgro.2006.09.025 |
0.518 |
|
| 2006 |
Volz MP, Schweizer M, Raghothamachar B, Dudley M, Szoke J, Cobb SD, Szofran FR. X-ray characterization of detached-grown germanium crystals Journal of Crystal Growth. 290: 446-451. DOI: 10.1016/J.Jcrysgro.2006.01.025 |
0.707 |
|
| 2006 |
Dhanaraj G, Dudley M, Chen Y, Ragothamachar B, Wu B, Zhang H. Epitaxial growth and characterization of silicon carbide films Journal of Crystal Growth. 287: 344-348. DOI: 10.1016/J.Jcrysgro.2005.11.021 |
0.405 |
|
| 2006 |
Neudeck P, Trunek A, Spry D, Powell J, Du H, Skowronski M, Huang X, Dudley M. CVD Growth of 3C-SiC on 4H/6H Mesas Chemical Vapor Deposition. 12: 531-540. DOI: 10.1002/Cvde.200506460 |
0.471 |
|
| 2005 |
Huang XR, Bai J, Dudley M, Wagner B, Davis RF, Zhu Y. Step-controlled strain relaxation in the vicinal surface epitaxy of nitrides. Physical Review Letters. 95: 86101. PMID 16196873 DOI: 10.1103/Physrevlett.95.086101 |
0.452 |
|
| 2005 |
Raghothamachar B, Konkapaka P, Wu H, Dudley M, Spencer M. Structural characterization of GaN single crystal layers grown by vapor transport from a gallium oxide (Ga2O3) powder source Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff30-07 |
0.622 |
|
| 2005 |
Wang S, Raghothamachar B, Dudley M, Timmerman AG. Crystal Growth and Defect Characterization of AlN Single Crystals Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff30-06 |
0.655 |
|
| 2005 |
Bai J, Huang X, Dudley M. Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff22-02 |
0.344 |
|
| 2005 |
Chen Y, Dhanaraj G, Chen H, Vetter W, Dudley M, Zhang H. Chemical Vapor Deposition and Defect Characterization of Silicon Carbide Epitaxial Films Mrs Proceedings. 891. DOI: 10.1557/Proc-0891-Ee12-11 |
0.325 |
|
| 2005 |
Vetter WM, Tsuchida H, Kamata I, Dudley M. Simulation of Threading Dislocation Images in X-ray Topographs of Silicon Carbide Homo-Epilayers Journal of Applied Crystallography. 38: 442-447. DOI: 10.1107/S0021889805005819 |
0.488 |
|
| 2005 |
Bai J, Huang X, Dudley M, Wagner B, Davis RF, Wu L, Sutter E, Zhu Y, Skromme B. Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN Journal of Applied Physics. 98: 63510. DOI: 10.1063/1.2039278 |
0.433 |
|
| 2005 |
Huang XR, Bai J, Dudley M, Dupuis RD, Chowdhury U. Epitaxial tilting of GaN grown on vicinal surfaces of sapphire Applied Physics Letters. 86: 211916. DOI: 10.1063/1.1940123 |
0.409 |
|
| 2005 |
Bai J, Dudley M, Chen L, Skromme B, Wagner B, Davis RF, Chowdhury U, Dupuis RD. Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates Journal of Applied Physics. 97: 116101. DOI: 10.1063/1.1914956 |
0.419 |
|
| 2005 |
Wang Y, Ali GN, Mikhov MK, Vaidyanathan V, Skromme BJ, Raghothamachar B, Dudley M. Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes Journal of Applied Physics. 97. DOI: 10.1063/1.1829784 |
0.617 |
|
| 2005 |
Hollingsworth MD, Peterson ML, Rush JR, Brown ME, Abel MJ, Black AA, Dudley M, Raghothamachar B, Werner-Zwanziger U, Still EJ, Vanecko JA. Memory and perfection in ferroelastic inclusion compounds Crystal Growth and Design. 5: 2100-2116. DOI: 10.1021/Cg050347J |
0.587 |
|
| 2005 |
Liu B, Edgar JH, Raghothamachar B, Dudley M, Lin JY, Jiang HX, Sarua A, Kuball M. Free nucleation of aluminum nitride single crystals in HPBN crucible by sublimation Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 117: 99-104. DOI: 10.1016/J.Mseb.2004.10.009 |
0.679 |
|
| 2004 |
Cho W, Huang X, Dudley M. 'Exact' formulation for pi-polarization waves of dynamical X-ray diffraction. Acta Crystallographica. Section a, Foundations of Crystallography. 60: 195-7. PMID 14966331 DOI: 10.1107/S0108767303029362 |
0.347 |
|
| 2004 |
Ma XY, Dudley M, Sudarshan TS. Nondestructive Defect Characterization of SiC Epilayers and its Significance for SiC Device Research Materials Science Forum. 601-604. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.601 |
0.306 |
|
| 2004 |
Huang X, Dudley M, Cho W, Okojie RS, Neudeck PG. Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques Materials Science Forum. 157-162. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.157 |
0.423 |
|
| 2004 |
Raghothamachar B, Dudley M, Wang B, Callahan M, Bliss D, Konkapaka P, Wu H, Spencer M. X-ray characterization of GaN single crystal layers grown by the ammonothermal technique on HVPE GaN seeds and by the sublimation technique on sapphire seeds Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E8.23 |
0.647 |
|
| 2004 |
Bai J, Dudley M, Chen L, Skromme BJ, Hartlieb PJ, Michaels E, Kolis JW, Wagner B, Davis RF, Chowdhury U, Dupuis RD. Relationship of basal plane and prismatic stacking faults in GaN to low temperature photoluminescence peaks at ∼3.4 eV and ∼3.2 eV Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E11.37 |
0.426 |
|
| 2004 |
Huang X, Dudley M, Okojie RS. Characterization of SiC epilayers using high-resolution X-ray diffraction and synchrotron topography imaging Mrs Proceedings. 815. DOI: 10.1557/Proc-815-J7.3 |
0.41 |
|
| 2004 |
Dhanaraj G, Liu F, Dudley M, Zhang H, Prasad V. PVT Growth of 6H SiC Crystals and Defect Characterization Mrs Proceedings. 815. DOI: 10.1557/Proc-815-J5.31 |
0.465 |
|
| 2004 |
Emorhokpor E, Kerr T, Zwieback I, Elkington W, Dudley M, Anderson T, Chen J. Characterization and Mapping of Crystal Defects in Silicon Carbide Mrs Proceedings. 815. DOI: 10.1557/Proc-815-J5.19 |
0.446 |
|
| 2004 |
Vetter WM, Dudley M. The Contrast Of Inclusions Compared With That Of Micropipes In Back-Reflection Synchrotron White Beam Topographs Of Sic Journal of Applied Crystallography. 37: 200-203. DOI: 10.1107/S0021889803028553 |
0.387 |
|
| 2004 |
Vetter WM, Dudley M. Micropipes and the closure of axial screw dislocation cores in silicon carbide crystals Journal of Applied Physics. 96: 348-353. DOI: 10.1063/1.1759082 |
0.508 |
|
| 2004 |
Bai J, Dudley M, Raghothamachar B, Gouma P, Skromme BJ, Chen L, Hartlieb PJ, Michaels E, Kolis JW. Correlated structural and optical characterization of ammonothermally grown bulk GaN Applied Physics Letters. 84: 3289-3291. DOI: 10.1063/1.1715154 |
0.667 |
|
| 2004 |
Vetter WM, Nagarajan R, Edgar JH, Dudley M. Double-positioning twinning in icosahedral B12As2 thin films grown by chemical vapor deposition Materials Letters. 58: 1331-1335. DOI: 10.1016/J.Matlet.2003.09.042 |
0.451 |
|
| 2004 |
Vetter WM, Dudley M. Characterization of defects in 3C-silicon carbide crystals Journal of Crystal Growth. 260: 201-208. DOI: 10.1016/J.Jcrysgro.2003.08.043 |
0.541 |
|
| 2003 |
Huang X, Dudley M. A universal computation method for two-beam dynamical X-ray diffraction. Acta Crystallographica. Section a, Foundations of Crystallography. 59: 163-7. PMID 12604855 DOI: 10.1107/S0108767303000485 |
0.424 |
|
| 2003 |
Dudley M, Huang X, Vetter WM, Neudeck PG. Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices Materials Science Forum. 247-252. DOI: 10.4028/Www.Scientific.Net/Msf.433-436.247 |
0.456 |
|
| 2003 |
Neudeck PG, Powell JA, Spry DJ, Trunek AJ, Huang X, Vetter WM, Dudley M, Skowronski M, Liu JQ. Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas During Step-Free Surface Heteroepitaxy Materials Science Forum. 213-216. DOI: 10.4028/Www.Scientific.Net/Msf.433-436.213 |
0.472 |
|
| 2003 |
Dalmau R, Raghothamachar B, Dudley M, Schlesser R, Sitar Z. Crucible selection in AlN bulk crystal growth Materials Research Society Symposium - Proceedings. 798: 287-291. DOI: 10.1557/Proc-798-Y2.9 |
0.685 |
|
| 2003 |
Ma X, Dudley M, Vetter W, Sudarshan T. Extended SiC Defects: Polarized Light Microscopy Delineation and Synchrotron White-Beam X-Ray Topography Ratification Japanese Journal of Applied Physics. 42. DOI: 10.1143/Jjap.42.L1077 |
0.47 |
|
| 2003 |
Dudley M, Huang XR, Vetter WM. Contribution of x-ray topography and high-resolution diffraction to the study of defects in SiC Journal of Physics D. 36. DOI: 10.1088/0022-3727/36/10A/307 |
0.515 |
|
| 2003 |
Okojie RS, Holzheu T, Huang X, Dudley M. X-Ray Diffraction Measurement Of Doping-Induced Lattice Mismatch In N-Type 4H-Sic Epilayers Grown On P-Type Substrates Applied Physics Letters. 83: 1971-1973. DOI: 10.1063/1.1606497 |
0.42 |
|
| 2003 |
Zimmermann U, Österman J, Kuylenstierna D, Hallén A, Konstantinov AO, Vetter WM, Dudley M. Material Defects In 4H-Silicon Carbide Diodes Journal of Applied Physics. 93: 611-618. DOI: 10.1063/1.1525065 |
0.461 |
|
| 2003 |
Vetter W, Liu J, Dudley M, Skowronski M, Lendenmann H, Hallin C. Dislocation loops formed during the degradation of forward-biased 4H–SiC p-n junctions Materials Science and Engineering: B. 98: 220-224. DOI: 10.1016/S0921-5107(03)00040-0 |
0.478 |
|
| 2003 |
Härtwig J, Baruchel J, Kuhn H, Huang X-, Dudley M, Pernot E. X-ray magnifying imaging investigation of giant Burgers vector micropipe-dislocations in 4H-SiC Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 200: 323-328. DOI: 10.1016/S0168-583X(02)01695-6 |
0.465 |
|
| 2003 |
Ma R-, Zhang H, Dudley M, Prasad V. Thermal system design and dislocation reduction for growth of wide band gap crystals: : application to SiC growth Journal of Crystal Growth. 258: 318-330. DOI: 10.1016/S0022-0248(03)01540-9 |
0.475 |
|
| 2003 |
Palosz W, Grasza K, Durose K, Halliday DP, Boyall NM, Dudley M, Raghothamachar B, Cai L. The effect of the wall contact and post-growth cool-down on defects in CdTe crystals grown by 'contactless' physical vapour transport Journal of Crystal Growth. 254: 316-328. DOI: 10.1016/S0022-0248(03)01183-7 |
0.68 |
|
| 2003 |
Wu B, Ma R, Zhang H, Dudley M, Schlesser R, Sitar Z. Growth Kinetics And Thermal Stress In Aln Bulk Crystal Growth Journal of Crystal Growth. 253: 326-339. DOI: 10.1016/S0022-0248(03)01044-3 |
0.434 |
|
| 2003 |
Raghothamachar B, Dudley M, Rojo JC, Morgan K, Schowalter LJ. X-ray characterization of bulk AIN single crystals grown by the sublimation technique Journal of Crystal Growth. 250: 244-250. DOI: 10.1016/S0022-0248(02)02253-4 |
0.716 |
|
| 2003 |
Schowalter LJ, Slack GA, Whitlock JB, Morgan K, Schujman SB, Raghothamachar B, Dudley M, Evans KR. Fabrication of native, single-crystal AlN substrates Physica Status Solidi C: Conferences. 1997-2000. DOI: 10.1002/Pssc.200303462 |
0.661 |
|
| 2002 |
Skromme BJ, Palle K, Poweleit CD, Bryant LR, Vetter WM, Dudley M, Moore K, Gehoski T. Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC Wafers Materials Science Forum. 455-458. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.455 |
0.304 |
|
| 2002 |
Ha SY, Vetter WM, Dudley M, Skowronski M. A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers Materials Science Forum. 443-446. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.443 |
0.307 |
|
| 2002 |
Dudley M, Vetter WM, Huang X, Neudeck PG, Powell JA. Polytype Identification and Mapping in Heteroepitaxial Growth of 3C on Atomically Flat 4H-SiC Mesas Using Synchrotron White-Beam X-Ray Topography Materials Science Forum. 391-394. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.391 |
0.432 |
|
| 2002 |
Neudeck PG, Powell JA, Trunek AJ, Huang XR, Dudley M. Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface Heteroepitaxy Materials Science Forum. 311-314. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.311 |
0.43 |
|
| 2002 |
Neudeck PG, Powell JA, Trunek AJ, Spry DJ, Beheim GM, Benavage E, Abel PB, Vetter WM, Dudley M. Homoepitaxial 'Web Growth' of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free Surfaces Materials Science Forum. 251-254. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.251 |
0.491 |
|
| 2002 |
Huang X, Dudley M, Neudeck PG, Powell JA. Accurate Lattice Constant and Mismatch Measurements of SiC Heterostructures by X-Ray Multiple-Order Reflections Mrs Proceedings. 742. DOI: 10.1557/Proc-742-K3.8 |
0.479 |
|
| 2002 |
Skromme B, Palle KC, Mikhov MK, Meidia H, Mahajan S, Huang XR, Vetter WM, Dudley M, Moore K, Smith S, Gehoski T. Effects of Structural Defects on Diode Properties in 4H-SiC Mrs Proceedings. 742: 181-186. DOI: 10.1557/Proc-742-K3.4 |
0.453 |
|
| 2002 |
Raghothamachar B, Bai J, Vetter WM, Gouma P, Dudley M, Mynbaeva M, Smith MT, Saddow SE. Characterization of Porous SiC Substrates and of the Epilayer Structures Grown on Them Mrs Proceedings. 742. DOI: 10.1557/Proc-742-K2.11 |
0.682 |
|
| 2002 |
Rojo JC, Schowalter LJ, Slack G, Morgan K, Barani J, Schujman S, Biswas S, Raghothamachar B, Dudley M, Shur M, Gaska R, Johnson NM, Kneissl M. Progress in the preparation of aluminum nitride substrates from bulk crystals Materials Research Society Symposium - Proceedings. 722: 5-13. DOI: 10.1557/Proc-722-K1.1 |
0.646 |
|
| 2002 |
Vetter WM, Dudley M. Surface-relaxation contributions to axial screw dislocation contrast in synchrotron white-beam X-ray topographs of SiC Journal of Applied Crystallography. 35: 689-695. DOI: 10.1107/S0021889802016175 |
0.435 |
|
| 2002 |
Neudeck PG, Powell JA, Beheim GM, Benavage EL, Abel PB, Trunek AJ, Spry DJ, Dudley M, Vetter WM. Enlargement of Step-Free SiC Surfaces by Homoepitaxial Web-Growth of Thin SiC Cantilevers Journal of Applied Physics. 92: 2391-2400. DOI: 10.1063/1.1497456 |
0.435 |
|
| 2002 |
Ha S, Skowronski M, Vetter WM, Dudley M. Basal plane slip and formation of mixed-tilt boundaries in sublimation-grown hexagonal polytype silicon carbide single crystals Journal of Applied Physics. 92: 778-785. DOI: 10.1063/1.1484229 |
0.558 |
|
| 2002 |
Sanchez EK, Liu JQ, Graef MD, Skowronski M, Vetter WM, Dudley M. Nucleation of threading dislocations in sublimation grown silicon carbide Journal of Applied Physics. 91: 1143-1148. DOI: 10.1063/1.1428088 |
0.5 |
|
| 2002 |
Ma R, Zhang H, Prasad V, Dudley M. Growth Kinetics and Thermal Stress in the Sublimation Growth of Silicon Carbide Crystal Growth & Design. 2: 213-220. DOI: 10.1021/Cg015572P |
0.369 |
|
| 2002 |
Raghothamachar B, Vetter WM, Dudley M, Dalmau R, Schlesser R, Sitar Z, Michaels E, Kolis JW. Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN Journal of Crystal Growth. 246: 271-280. DOI: 10.1016/S0022-0248(02)01751-7 |
0.718 |
|
| 2001 |
Huang XR, Dudley M, Zhao JY. Forbidden X-ray wavefields of three-beam Bragg reflections from thick crystals Acta Crystallographica Section A. 57: 68-75. PMID 11124505 DOI: 10.1107/S0108767300013180 |
0.405 |
|
| 2001 |
Rojo JC, Schowalter LJ, Morgan K, Florescu DI, Pollak FH, Raghothamachar B, Dudley M. Single-crystal aluminum nitride substrate preparation from bulk crystals Materials Research Society Symposium Proceedings. 680: 1-7. DOI: 10.1557/Proc-680-E2.7 |
0.642 |
|
| 2001 |
Rojo JC, Slack GA, Morgan K, Schowalter LJ, Dudley M. Growth of self-seeded aluminum nitride by sublimation-recondensation and substrate preparation Materials Research Society Symposium - Proceedings. 639: G1.10.1-G1.10.6. DOI: 10.1557/Proc-639-G1.10 |
0.507 |
|
| 2001 |
Vetter WM, Dudley M. X-ray topographic dislocation contrast visible in reflections orthogonal to the Burgers vectors of axial screw dislocations in hexagonal silicon carbide Journal of Applied Crystallography. 34: 20-26. DOI: 10.1107/S0021889800017027 |
0.521 |
|
| 2001 |
Vetter WM, Dudley M. Transmission electron microscopy studies of dislocations in physical-vapour-transport-grown silicon carbide Philosophical Magazine. 81: 2885-2902. DOI: 10.1080/01418610110056907 |
0.448 |
|
| 2001 |
Kuhr TA, Sanchez EK, Skowronski M, Vetter WM, Dudley M. Hexagonal voids and the formation of micropipes during SiC sublimation growth Journal of Applied Physics. 89: 4625-4630. DOI: 10.1063/1.1355716 |
0.483 |
|
| 2001 |
Vetter WM, Dudley M. Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals Materials Science and Engineering B-Advanced Functional Solid-State Materials. 87: 173-177. DOI: 10.1016/S0921-5107(01)00738-3 |
0.512 |
|
| 2001 |
Carlos Rojo J, Slack GA, Morgan K, Raghothamachar B, Dudley M, Schowalter LJ. Report on the growth of bulk aluminum nitride and subsequent substrate preparation Journal of Crystal Growth. 231: 317-321. DOI: 10.1016/S0022-0248(01)01452-X |
0.682 |
|
| 2001 |
Vetter WM, Huang W, Neudeck P, Powell JA, Dudley M. Synchrotron white-beam topographic studies of 2H-SiC crystals Journal of Crystal Growth. 224: 269-273. DOI: 10.1016/S0022-0248(01)00971-X |
0.546 |
|
| 2000 |
Schnabel CM, Tabib-Azar M, Neudeck PG, Bailey SG, Su HB, Dudley M, Raffaelle RP. Correlation of ebic and swbxt imaged defects and epilayer growth pits in 6H-SiC schottky diodes Materials Science Forum. 338: 489-492. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.489 |
0.431 |
|
| 2000 |
Kuhr TA, Vetter WM, Dudley M, Skowronski M. X-ray Characterization of 3 inch Diameter 4H and 6H-SiC Experimental Wafers Materials Science Forum. 473-476. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.473 |
0.423 |
|
| 2000 |
Vetter WM, Dudley M, Huang W, Neudeck P, Powell JA. Synchrotron white beam X-ray topography and atomic force microscopy studies of a 540R-SiC lely platelet Materials Science Forum. 338: 469-472. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.469 |
0.355 |
|
| 2000 |
Dudley M, Huang W, Vetter WM, Neudeck P, Powell JA. Synchrotron white beam topography studies of 2H SiC crystals Materials Science Forum. 338: 465-468. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.465 |
0.44 |
|
| 2000 |
Shamsuzzoha M, Saddow SE, Schattner TE, Jin L, Dudley M, Rendakova SV, Dmitriev V. Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes Materials Science Forum. 453-456. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.453 |
0.347 |
|
| 2000 |
Dudley M, Huang X. Characterization of SiC using Synchrotron White Beam X-ray Topography Materials Science Forum. 431-436. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.431 |
0.403 |
|
| 2000 |
Baker I, Liu F, Jia K, Hu X, Cullen D, Dudley M. Dynamic observations of dislocation/grain-boundary interactions in ice Annals of Glaciology. 31: 236-240. DOI: 10.3189/172756400781820525 |
0.394 |
|
| 2000 |
Saddow SE, Melnychuk G, Mynbaeva M, Nikitina I, Vetter WM, Jin L, Dudley M, Shamsuzzoha M, Dmitriev V, Wood CEC. Structural Characterization Of Sic Epitaxial Layers Grown On Porous Sic Substrates Mrs Proceedings. 640. DOI: 10.1557/Proc-640-H2.7 |
0.421 |
|
| 2000 |
Neudeck PG, Kuczmarski MA, Dudley M, Vetter WM, Su HB, Keys LJ, Trunek AJ. Investigations of Non-Micropipe X-Ray Imaged Crystal Defects in SiC Devices Mrs Proceedings. 622. DOI: 10.1557/Proc-622-T1.2.1 |
0.461 |
|
| 2000 |
Vetter WM, Dudley M. Micropipes in silicon carbide crystals: Do all screw dislocations have open cores? Journal of Materials Research. 15: 1649-1652. DOI: 10.1557/Jmr.2000.0236 |
0.476 |
|
| 2000 |
Cullen D, Hu X, Baker I, Dudley M. Dislocation motion around loaded notches in ice single-crystals Cold Regions Science and Technology. 31: 103-117. DOI: 10.1016/S0165-232X(00)00003-3 |
0.463 |
|
| 2000 |
Su C, Dudley M, Matyi R, Feth S, Lehoczky S. Characterizations of ZnSe single crystals grown by physical vapor transport Journal of Crystal Growth. 208: 237-247. DOI: 10.1016/S0022-0248(99)00500-X |
0.514 |
|
| 1999 |
Cullen D, Hu X, Baker I, Dudley M. Dislocation motion around loaded notches in ice single crystals Mrs Proceedings. 590. DOI: 10.1557/Proc-590-291 |
0.453 |
|
| 1999 |
Huang XR, Dudley M, Vetter WM, Huang W, Si W, Carter CH. Superscrew dislocation contrast on synchrotron white-beam topographs: an accurate description of the direct dislocation image Journal of Applied Crystallography. 32: 516-524. DOI: 10.1107/S0021889899002939 |
0.493 |
|
| 1999 |
Dudley M, Huang XR, Huang W. Assessment of orientation and extinction contrast contributions to the direct dislocation image Journal of Physics D. 32. DOI: 10.1088/0022-3727/32/10A/329 |
0.43 |
|
| 1999 |
Dudley M, Huang XR, Huang W, Powell A, Wang S, Neudeck P, Skowronski M. The mechanism of micropipe nucleation at inclusions in silicon carbide Applied Physics Letters. 75: 784-786. DOI: 10.1063/1.124512 |
0.515 |
|
| 1999 |
Huang XR, Dudley M, Vetter WM, Huang W, Wang S, Carter CH. Direct evidence of micropipe-related pure superscrew dislocations in SiC Applied Physics Letters. 74: 353-355. DOI: 10.1063/1.123069 |
0.473 |
|
| 1998 |
Si W, Dudley M, Glass RC, CHCJ, Tsvetkov VF. Experimental Studies of Hollow-Core Screw Dislocations in 6H-SiC and 4H-SiC Single Crystals Materials Science Forum. 429-432. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.429 |
0.45 |
|
| 1998 |
Saddow SE, Okhusyen ME, Mazzola MS, Dudley M, Huang XR, Huang W, Su H, Shamsuzzoha M, Lo YH. Characterization of Single-Crystal 3C-SIC Epitaxial Layers on SI Substrates Mrs Proceedings. 535. DOI: 10.1557/Proc-535-107 |
0.472 |
|
| 1998 |
Huang XR, Dudley M, Vetter WM, Huang W, Wang S, Carter CH. Contrast Mechanism in Superscrew Dislocation Images on Synchrotron Back-Reflection Topographs Mrs Proceedings. 524: 71. DOI: 10.1557/Proc-524-71 |
0.491 |
|
| 1998 |
Dudley M, Raghothamachar B, Guo Y, Huang XR, Chung H, Larson DJ, Hurle DTJ, Bliss DF, Prasad V, Huang Z. The mechanism of twinning in zincblende structure crystals: New insights on polarity effects from a study of magnetic liquid encapsulated Czochralski grown InP single crystals Mrs Proceedings. 524: 65-70. DOI: 10.1557/Proc-524-65 |
0.619 |
|
| 1998 |
Neudeck PG, Huang W, Dudley M, Fazi C. Non-Micropipe Dislocations in 4H-SiC Devices: Electrical Properties and Device Technology Implications Mrs Proceedings. 512: 107. DOI: 10.1557/Proc-512-107 |
0.412 |
|
| 1998 |
Vetter WM, Dudley M. Harmonic composition of synchrotron white-beam X-ray topographic back-reflection images of basal-cut silicon carbide single-crystal wafers Journal of Applied Crystallography. 31: 820-822. DOI: 10.1107/S0021889898004683 |
0.434 |
|
| 1998 |
Larson DJ, Dudley M, Chung H, Raghothamachar B. Characterization of Zn-Alloyed CdTe compound semiconductors processed in microgravity on USML-1 and USML-2 Advances in Space Research. 22: 1179-1188. DOI: 10.1016/S0273-1177(98)00161-6 |
0.653 |
|
| 1998 |
Neudeck PG, Huang W, Dudley M. Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers Solid-State Electronics. 42: 2157-2164. DOI: 10.1016/S0038-1101(98)00211-1 |
0.443 |
|
| 1998 |
Dudley M, Raghothamachar B, Guo Y, Huang XR, Chung H, Hurle DTJ, Bliss DF. The influence of polarity on twinning in zincblende structure crystals : new insights from a study of magnetic liquid encapsulated, Czochralski grown InP single crystals Journal of Crystal Growth. 192: 1-10. DOI: 10.1016/S0022-0248(98)00411-4 |
0.644 |
|
| 1998 |
Chung H, Dudley M, Larson DJ, Hurle DTJ, Bliss DF, Prasad V. The mechanism of growth-twin formation in zincblende crystals: new insights from a study of magnetic liquid encapsulated Czochralski-grown InP single crystals Journal of Crystal Growth. 187: 9-17. DOI: 10.1016/S0022-0248(97)00843-9 |
0.468 |
|
| 1998 |
Rhiger DR, Peterson JM, Emerson RM, Gordon EE, Sen S, Chen Y, Dudley M. Investigation of the cross-hatch pattern and localized defects in epitaxial HgCdTe Journal of Electronic Materials. 27: 615-623. DOI: 10.1007/S11664-998-0025-3 |
0.45 |
|
| 1998 |
Raghothamachar B, Chung H, Dudley M, Larson DJ. Effect of constrained growth on defect structures in microgravity grown CdZnTe Boules Journal of Electronic Materials. 27: 556-563. DOI: 10.1007/S11664-998-0015-5 |
0.663 |
|
| 1997 |
Neudeck PG, Huang W, Dudley M. Breakdown Degradation Associated With Elementary Screw Dislocations In 4H-SiC P + N Junction Rectifiers Mrs Proceedings. 483: 285. DOI: 10.1557/Proc-483-285 |
0.435 |
|
| 1997 |
Park BM, Chung SJ, Kim HS, Si W, Dudley M. Synchrotron white-beam X-ray topography of ferroelectric domains in a BaTiO3 single crystal Philosophical Magazine. 75: 611-620. DOI: 10.1080/01418619708207192 |
0.449 |
|
| 1997 |
Palosz W, Gillies D, Grasza K, Chung H, Raghothamachar B, Dudley M. Characterization of Cadmium-Zinc Telluride Crystals Grown by 'Contactless' PVT Using Synchrotron White Beam Topography Journal of Crystal Growth. 182: 37-44. DOI: 10.1016/S0022-0248(97)00337-0 |
0.691 |
|
| 1997 |
Chung H, Si W, Dudley M, Bliss DF, Kalan R, Maniatty A, Zhang H, Prasad V. Characterization of defect structures in magnetic liquid encapsulated Kyropoulos grown InP single crystals Journal of Crystal Growth. 181: 17-25. DOI: 10.1016/S0022-0248(97)00271-6 |
0.467 |
|
| 1997 |
Rhiger DR, Sen S, Peterson JM, Chung H, Dudley M. Lattice mismatch induced morphological features and strain in HgCdTe epilayers on CdZnTe substrates Journal of Electronic Materials. 26: 515-523. DOI: 10.1007/S11664-997-0187-4 |
0.473 |
|
| 1997 |
Si W, Dudley M, Kong H, Sumakeris J, Carter C. Investigations of 3C-SiC inclusions in 4H-SiC epilayers on 4H-SiC single crystal substrates Journal of Electronic Materials. 26: 151-159. DOI: 10.1007/S11664-997-0142-4 |
0.47 |
|
| 1997 |
Si W, Dudley M, Glass R, Tsvetkov V, Carter C. Hollow-core screw dislocations in 6H-SiC single crystals: a test of Frank's theory Journal of Electronic Materials. 26: 128-133. DOI: 10.1007/S11664-997-0138-0 |
0.494 |
|
| 1997 |
Dudley M, Si W, Wang S, Carter C, Glass R, Tsvetkov V. Quantitative analysis of screw dislocations in 6H−SiC single crystals Il Nuovo Cimento D. 19: 153-164. DOI: 10.1007/Bf03040968 |
0.504 |
|
| 1996 |
Baker I, Liu F, Jia K, Hu X, Dudley M. Dislocation/Grain Boundary Interactions in Ice Crystals under Creep Conditions Materials Science Forum. 581-584. DOI: 10.4028/Www.Scientific.Net/Msf.207-209.581 |
0.355 |
|
| 1996 |
Vetter WM, Dudley M. X-Ray Topography Of A Single Superscrew Dislocation In 6H-SiC Through All {100} Faces Mrs Proceedings. 442: 661. DOI: 10.1557/Proc-442-661 |
0.463 |
|
| 1996 |
Si W, Dudley M, Carter C, Glass R, Tsvetkov V. Determination of Burgers Vector of Screw Dislocations in 6H-SiC Single Crystals by Synchrotron White Beam X-Ray Topography Mrs Proceedings. 437: 129. DOI: 10.1557/Proc-437-129 |
0.555 |
|
| 1996 |
Hu X, Baker I, Dudley M. Dynamic In-Situ Synchrotron X-Ray Topographic Observations Of Dislocations In Notched Ice Crystals Mrs Proceedings. 437. DOI: 10.1557/Proc-437-119 |
0.446 |
|
| 1996 |
Chung H, Raghothamachar B, Zhou W, Dudley M, Gillies DC. Studies of interface demarcation and structural defects in Ga doped Ge single crystals using synchrotron white beam x-ray topography Mrs Proceedings. 437: 107. DOI: 10.1557/Proc-437-107 |
0.713 |
|
| 1996 |
Larson Jr DJ, Dudley M, Chung H, Raghothamachar B. Synchrotron characterization of Zn-alloyed CdTe compound semiconductors processed in microgravity on STS 50 and 73 Acta Crystallographica Section a Foundations of Crystallography. 52: C521-C521. DOI: 10.1107/S0108767396078737 |
0.523 |
|
| 1996 |
Chung H, Dudley M, Brown ME, Hollingsworth MD. Synchrotron White Beam X-Ray Topography Characterization of Defect Structures in 2,10-Undecanedione/Urea Inclusion Compounds Molecular Crystals and Liquid Crystals Science and Technology. Section a. Molecular Crystals and Liquid Crystals. 276: 203-212. DOI: 10.1080/10587259608039378 |
0.508 |
|
| 1996 |
Dudley M, Vetter WM. Growth Defect Studies in SiC Single Crystals Molecular Crystals and Liquid Crystals. 278: 37-46. DOI: 10.1080/10587259608033655 |
0.511 |
|
| 1996 |
Jia K, Baker I, Liu F, Dudley M. Observation of slip transmission through a grain boundary in ice Journal of Materials Science. 31: 2373-2378. DOI: 10.1007/Bf01152949 |
0.308 |
|
| 1995 |
Huang W, Wang Q, Dudley M, Chiang FP, Parsons J, Fazi C. Synchrotron White Beam Topography Studies of Residual Stress in SiC Single Crystal Wafers with Epitaxial Thin Films Mrs Proceedings. 399: 425. DOI: 10.1557/Proc-399-425 |
0.412 |
|
| 1995 |
Chung H, Raghothamachar B, Wu J, Dudley M, Larson DJ, Gillies DC. Characterization of Growth Defects in CdZnTe Single Crystals by Synchrotron White Beam X-ray Topography Mrs Proceedings. 378: 41. DOI: 10.1557/Proc-378-41 |
0.694 |
|
| 1995 |
Dudley M, Wang S, Huang W, Carter CH, Tsvetkov VF, Fazi C. White-beam synchrotron topographic studies of defects in 6H-SiC single crystals Journal of Physics D: Applied Physics. 28: A63-A68. DOI: 10.1088/0022-3727/28/4A/012 |
0.556 |
|
| 1995 |
Liu F, Baker I, Dudley M. Dislocation-grain boundary interactions in ice crystals Philosophical Magazine. 71: 15-42. DOI: 10.1080/01418619508242954 |
0.404 |
|
| 1995 |
Liu F, Baker I, Dudley M. Thermally induced dislocation loops in polycrystalline ice Philosophical Magazine. 71: 1-14. DOI: 10.1080/01418619508242953 |
0.358 |
|
| 1995 |
Tobin SP, Smith FTJ, Norton PW, Wu J, Dudley M, Marzio DD, Casagrande LG. The relationship between lattice matching and crosshatch in liquid phase epitaxy HgCdTe on CdZnTe substrates Journal of Electronic Materials. 24: 1189-1199. DOI: 10.1007/Bf02653073 |
0.415 |
|
| 1994 |
Huang W, Dudley M, Fazi C. Characterization of Defect Structures in 3C-SiC Single Crystals Using Synchrotron White Beam X-ray Topography Mrs Proceedings. 423: 545. DOI: 10.1557/Proc-423-545 |
0.545 |
|
| 1994 |
Huang W, Wang S, Dudley M, Neudeck P, Powell JA, Fazi C. Computer Aided Synchrotron White Beam X-Ray Topographic Analysis of Multipolytype SiC Device Configurations Mrs Proceedings. 375: 327. DOI: 10.1557/Proc-375-327 |
0.459 |
|
| 1994 |
Liu F, Baker I, Dudley M. A New Method to Characterize Dislocation Loops Mrs Proceedings. 375. DOI: 10.1557/Proc-375-319 |
0.356 |
|
| 1994 |
Wang S, Dudley M, Carter CH, Tsvetkov VF, Fazi C. Synchrotron White Beam Topography Studies of Screw Dislocations in 6H-Sic Single Crystals Mrs Proceedings. 375. DOI: 10.1557/Proc-375-281 |
0.545 |
|
| 1994 |
Wang S, Dudley M, Carter CH, Kong HS. X-Ray Topographic Studies of Defects in PVT 6H-SiC Substrates and Epitaxial 6H-SiC Thin Films Mrs Proceedings. 339: 735. DOI: 10.1557/Proc-339-735 |
0.484 |
|
| 1994 |
Dudley M, Liu F, Baker I. Studies of Defect Behavior in Large-Grain, Polycrystalline Ice Using Synchrotron X-ray Topography Molecular Crystals and Liquid Crystals. 240: 73-80. DOI: 10.1080/10587259408029716 |
0.45 |
|
| 1994 |
Zhou W, Dudley M, Wu J, Su CH, Volz MP, Gillies DC, Szofran FR, Lehoczky SL. Synchrotron topography characterization of ZnTe single crystals Materials Science and Engineering B-Advanced Functional Solid-State Materials. 27: 143-153. DOI: 10.1016/0921-5107(94)90135-X |
0.505 |
|
| 1994 |
Casagrande LG, Larson DJ, Marzio DD, Wu J, Dudley M. The growth and comparison of large-diameter vertical Bridgman CdZnTe and CdTe☆ Journal of Crystal Growth. 137: 195-200. DOI: 10.1016/0022-0248(94)91271-8 |
0.495 |
|
| 1993 |
Dudley M, Wu J, Larson DJ, Dimarzio D. Use of Synchrotron White Beam X-Ray Topography to Characterize IR Detector Manufacturing Processes Mrs Proceedings. 324. DOI: 10.1557/Proc-324-457 |
0.376 |
|
| 1993 |
Wang S, Dudley M, Cheng LK, Bierlein JD, Bindloss W. Imaging of Ferroelectric Domains in KTiOPO 4 Single Crystals by Synchrotron X-RAY Topography Mrs Proceedings. 310: 29. DOI: 10.1557/Proc-310-29 |
0.428 |
|
| 1993 |
Wang S, Dudley M, Carter C, Asbury D, Fazit C. Characterization of Defect Structures in SiC Single Crystals Using Synchrotron X-Ray Topography Mrs Proceedings. 307: 249. DOI: 10.1557/Proc-307-249 |
0.495 |
|
| 1993 |
Wang S, Dudley M, Cheng LK, Bierlein JD. Synchrotron X-Ray Topographic Study of Defects in High Quality, Flux Grown Ktiopo 4 Single Crystals Mrs Proceedings. 307: 243. DOI: 10.1557/Proc-307-243 |
0.535 |
|
| 1993 |
Dudley M. X-Ray Topography Mrs Proceedings. 307. DOI: 10.1557/Proc-307-213 |
0.37 |
|
| 1993 |
Zhou W, Wu J, Dudley M, Su CH, Volz MP, Gillies DC, Szofran FR, Lehoczky SL. Characterization of Growth Defects in ZnTe Single Crystals Mrs Proceedings. 299: 203. DOI: 10.1557/Proc-299-203 |
0.447 |
|
| 1993 |
Su C, Volz MP, Gillies DC, Szofran FR, Lehoczky SL, Dudley M, Yao G-, Zhou W. Growth of ZnTe by physical vapor transport and traveling heater method Journal of Crystal Growth. 128: 627-632. DOI: 10.1016/S0022-0248(07)80013-3 |
0.438 |
|
| 1993 |
Casagrande LG, Marzio DD, Lee MB, Larson DJ, Dudley M, Fanning T. Vertical bridgman growth and characterization of large-diameter single-crystal CdTe Journal of Crystal Growth. 128: 576-581. DOI: 10.1016/S0022-0248(07)80003-0 |
0.473 |
|
| 1993 |
Fanning T, Lee MB, Casagrande LG, Marzio DD, Dudley M. Synchrotron white beam x-ray topography analysis of MBE grown CdTe/CdTe (111)B Journal of Electronic Materials. 22: 943-949. DOI: 10.1007/Bf02817508 |
0.532 |
|
| 1992 |
Wu J, Fannin T, Dudley M, Shastry V, Anderson P. Influence of Surface Relaxation and Multi-Dislocation Strain Field Interactions on X-ray Topographic Images of Dislocations in Semiconductor Materials Mrs Proceedings. 262: 265. DOI: 10.1557/Proc-262-265 |
0.397 |
|
| 1992 |
Marzio DD, Casagrande LG, Lee MB, Fanning T, Dudley M. Rapid Structural Defect Mapping of Bulk II-VI Semiconductors Using White-Beam Synchrotron Topography and X-ray Rocking Curve Analysis Mrs Proceedings. 262: 215. DOI: 10.1557/Proc-262-215 |
0.406 |
|
| 1992 |
Yao GD, Phillips JM, Hou SY, Dudley M. Synchrotron x-ray topography studies of twin structures in lanthanum aluminate single crystals Journal of Materials Research. 7: 1847-1855. DOI: 10.1557/Jmr.1992.1847 |
0.487 |
|
| 1992 |
Yuan D, Dudley M. Dislocation line direction determination in pyrene single crystals Molecular Crystals and Liquid Crystals Science and Technology. Section a. Molecular Crystals and Liquid Crystals. 211: 51-58. DOI: 10.1080/10587259208025804 |
0.441 |
|
| 1992 |
Dudley M, Disalvo R, Wu J, Gordon-Smith D, Jones W. Synchrotron topography observations of a low temperature phase transition in an organic crystal Molecular Crystals and Liquid Crystals Science and Technology. Section a. Molecular Crystals and Liquid Crystals. 211: 43-49. DOI: 10.1080/10587259208025803 |
0.428 |
|
| 1992 |
Dudley M, Disalvo R, Hou SY, Foxman BM, Jones W. Characterization of defects in p-terphenyl single crystals Molecular Crystals and Liquid Crystals Science and Technology. Section a. Molecular Crystals and Liquid Crystals. 211: 35-42. DOI: 10.1080/10587259208025802 |
0.504 |
|
| 1992 |
Dudley M, Tolis G, Gordon-Smith D, Fazi C. A new diagnostic tool for the non-destructive characterization of damage accompanying the electromagnetic breakdown of epitaxial silicon p-n junctions Materials Science and Engineering B-Advanced Functional Solid-State Materials. 15: 56-62. DOI: 10.1016/0921-5107(92)90030-D |
0.384 |
|
| 1992 |
Liu F, Baker I, Yao G, Dudley M. Dislocations and grain boundaries in polycrystalline ice: a preliminary study by synchrotron X-ray topography Journal of Materials Science. 27: 2719-2725. DOI: 10.1007/Bf00540695 |
0.447 |
|
| 1991 |
Fanning T, Dudley M, Wang FFY, Gordon-Smith D, Hodul DT. Synchrotron X-Ray Topographic Study of the Behavior of Defects in High Carbon-Content Si Wafers during RTP Mrs Proceedings. 225. DOI: 10.1557/Proc-225-301 |
0.431 |
|
| 1991 |
Dudley M, Wang FFY, Fanning T, Gordon-Smith D. Synchrotron X-Ray Topography as a Non-Destructive Monitor of Damage Accompanying IC Processing Mrs Proceedings. 224: 61. DOI: 10.1557/Proc-224-61 |
0.333 |
|
| 1991 |
Yao G-, Hon SY, Dudley M, Phillips JM. Characterization of Perovskite-Like Substrates for Thin Film Superconductors using Synchrotron X-Ray Topography Advances in X-Ray Analysis. 35: 255-261. DOI: 10.1154/S0376030800008909 |
0.375 |
|
| 1991 |
Dudley M, Yao G, Paine D, Howard D, Sacks R. A characterization of InxGa1−x As/GaAs strained-layer systems using a combination of synchrotron X-ray topography and transmission electron microscopy Materials Science and Engineering B-Advanced Functional Solid-State Materials. 10: 75-84. DOI: 10.1016/0921-5107(91)90097-F |
0.442 |
|
| 1991 |
Yao GD, Dudley M, Hou SY, DiSalvo R. Application of white beam synchrotron radiation topography to the analysis of twins Nuclear Inst. and Methods in Physics Research, B. 56: 400-404. DOI: 10.1016/0168-583X(91)96057-R |
0.463 |
|
| 1990 |
Yao G, Wu J, Dudley M, Shastry V, Anderson P. Influence of Surface Relaxation on X-Ray Topographic Imaging of Interfacial Dislocations in Heterosystems. Mrs Proceedings. 209: 707. DOI: 10.1557/Proc-209-707 |
0.445 |
|
| 1990 |
Dudley M, Yao G, Paine D, Howard D, Sacks RN. Combined Tem and X-Ray Topographic Characterization of In x Ga 1−x As/GaAs Strained Layer Systems. Mrs Proceedings. 209: 655. DOI: 10.1557/Proc-209-655 |
0.363 |
|
| 1990 |
Dudley M, Wang FFY, Fanning T, Tolis G, Wu J, Hodul DT. Synchrotron Topographic Studies of the Influence of Rapid Thermal Processing on Defect Structures in Single Crystal Silicon. Mrs Proceedings. 209. DOI: 10.1557/Proc-209-511 |
0.417 |
|
| 1990 |
Dudley M, Baruchel J, Sherwood JN. Neutron topography as a tool for studying reactive organic crystals : a feasibility study Journal of Applied Crystallography. 23: 186-198. DOI: 10.1107/S0021889890000371 |
0.36 |
|
| 1990 |
Dudley M, Hou SY, Foxman BM. Synchrotron White Radiation Topographic Studies of the X-Ray Induced Solid State Polymerization of Bis(Propio1ato)Tetra-aquozinc(II) Single Crystals Molecular Crystals and Liquid Crystals. 187: 207-213. DOI: 10.1080/00268949008036044 |
0.465 |
|
| 1990 |
Yao G-, Dudley M, Wu J. Synchrotron white beam topographic imaging in grazing bragg-laue geometries. Journal of X-Ray Science and Technology. 2: 195-213. DOI: 10.1016/0895-3996(90)90012-B |
0.442 |
|
| 1990 |
Dudley M, Wang FFY, Fanning T, Tolis G, Jun W, Hodul DT. Synchrotron X-ray topographic studies of the changes in defect microstructure induced by rapid thermal processing of single-crystal silicon wafers Materials Letters. 10: 87-92. DOI: 10.1016/0167-577X(90)90037-M |
0.522 |
|
| 1989 |
Dudley M. The Application of Neutron Topography to the Study of X-ray Sensitive Organic Crystals - a Possible Alternative to X-ray Topography. Mrs Proceedings. 166. DOI: 10.1557/Proc-166-55 |
0.423 |
|
| 1989 |
Dudley M, Yao G-, Wu J, Liu H-. Depth Sensitive Imaging of Defects in Epilayers and Single Crystals Using White Beam Synchrotron Radiation Topography in Grazing Bragg-Laue Geometry. Mrs Proceedings. 163. DOI: 10.1557/Proc-163-1031 |
0.446 |
|
| 1989 |
Dudley M, Yao G-, Wu J, Liu H-, Kao YC. Determination of 3-Dimensional Defect Structures in Gallium Arsenide Epilayers on Silicon Using White Beam Synchrotron Radiation Topography in both Transmission and Grazing Bragg-Laue Geometry. Mrs Proceedings. 160. DOI: 10.1557/Proc-160-469 |
0.476 |
|
| 1989 |
Dudley M, Miltat J. Synchrotron topographic studies of the effects of elastic stress on magnetic domain configurations in Fe 3.5 wt.% Si single crystals Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 393-397. DOI: 10.1016/0168-583X(89)91006-9 |
0.38 |
|
| 1989 |
Dudley M, Wu J, Yao GD. Determination of penetration depths and analysis of strains in single crystals by white beam synchrotron X-ray topography in grazing Bragg-Laue geometries Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 40: 388-392. DOI: 10.1016/0168-583X(89)91005-7 |
0.442 |
|
| 1988 |
Dudley M. White Beam Synchrotron Topographic Studies of the Effects of Localized Stress Fields on the Kinetics of Single Crystal Solid State Reactions. Mrs Proceedings. 143. DOI: 10.1557/Proc-143-253 |
0.366 |
|
| 1983 |
Dudley M, Sherwood JN, Ando DJ, Bloor D. SRS Radiation Induced Polymerization of 2,4-Hexadiynediol-BIS-(p-Toluenesulphonate) (PTS) Molecular Crystals and Liquid Crystals. 93: 223-237. DOI: 10.1080/00268948308073530 |
0.347 |
|
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