Year |
Citation |
Score |
2018 |
Zhou B, Kong X, Vanka S, Chu S, Ghamari P, Wang Y, Pant N, Shih I, Guo H, Mi Z. Gallium nitride nanowire as a linker of molybdenum sulfides and silicon for photoelectrocatalytic water splitting. Nature Communications. 9: 3856. PMID 30242212 DOI: 10.1038/S41467-018-06140-1 |
0.324 |
|
2018 |
Qu J, Wang R, Sun Y, Shih I, Mi Z, Liu X. Characterizing the electrical breakdown properties of single n-i-n-n+:GaN nanowires Applied Physics Letters. 113: 193103. DOI: 10.1063/1.5050511 |
0.313 |
|
2016 |
Wang R, Ra YH, Wu Y, Zhao S, Nguyen HPT, Shih I, Mi Z. Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire Proceedings of Spie - the International Society For Optical Engineering. 9748. DOI: 10.1117/12.2213741 |
0.313 |
|
2016 |
Park S, Champness CH, Shih I. Effect of sodium diffused into Bridgman CuInSe2+x Journal of Electron Spectroscopy and Related Phenomena. 212: 21-27. DOI: 10.1016/J.Elspec.2016.07.003 |
0.353 |
|
2015 |
Zhao S, Connie AT, Dastjerdi MH, Kong XH, Wang Q, Djavid M, Sadaf S, Liu XD, Shih I, Guo H, Mi Z. Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources. Scientific Reports. 5: 8332. PMID 25684335 DOI: 10.1038/Srep08332 |
0.347 |
|
2015 |
Nguyen HP, Djavid M, Woo SY, Liu X, Connie AT, Sadaf S, Wang Q, Botton GA, Shih I, Mi Z. Engineering the carrier dynamics of InGaN nanowire white light-emitting diodes by distributed p-AlGaN electron blocking layers. Scientific Reports. 5: 7744. PMID 25592057 DOI: 10.1038/Srep07744 |
0.337 |
|
2015 |
Wang R, Liu X, Shih I, Mi Z. High efficiency, full-color AlInGaN quaternary nanowire light emitting diodes with spontaneous core-shell structures on Si Applied Physics Letters. 106. DOI: 10.1063/1.4923246 |
0.351 |
|
2015 |
Park S, Champness CH, Shih I. Characteristics of XPS Se 3d peaks in crystalline Bridgman CuInSe2+x with added sodium in the melt Journal of Electron Spectroscopy and Related Phenomena. 205: 23-28. DOI: 10.1016/J.Elspec.2015.07.008 |
0.304 |
|
2014 |
Salehzadeh O, Tran NH, Liu X, Shih I, Mi Z. Exciton kinetics, quantum efficiency, and efficiency droop of monolayer MoS₂ light-emitting devices. Nano Letters. 14: 4125-30. PMID 24905765 DOI: 10.1021/Nl5017283 |
0.311 |
|
2014 |
Connie AT, Nguyen HPT, Sadaf SM, Shih I, Mi Z. Engineering the color rendering index of phosphor-free InGaN/(Al)GaN nanowire white light emitting diodes grown by molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4865914 |
0.305 |
|
2014 |
Zhang S, Connie AT, Laleyan DA, Nguyen HPT, Wang Q, Song J, Shih I, Mi Z. On the carrier injection efficiency and thermal property of InGaN/GaN axial nanowire light emitting diodes Ieee Journal of Quantum Electronics. 50: 483-490. DOI: 10.1109/Jqe.2014.2317732 |
0.365 |
|
2014 |
Myers HF, Champness CH, Shih I. Electrical effect of introducing elemental sodium into the Bridgman melt of CuInSe2+x crystals Journal of Crystal Growth. 387: 36-40. DOI: 10.1016/J.Jcrysgro.2013.10.038 |
0.578 |
|
2013 |
Nguyen HP, Zhang S, Connie AT, Kibria MG, Wang Q, Shih I, Mi Z. Breaking the carrier injection bottleneck of phosphor-free nanowire white light-emitting diodes. Nano Letters. 13: 5437-42. PMID 24074440 DOI: 10.1021/Nl4030165 |
0.316 |
|
2012 |
Wang X, Zhang Y, Deng Z, Wang Y, Wang Z, Shih I. Preparation and Performance Research of CuInSe<sub>2</sub> Materials Applied in Solar Cell Journal of Crystallization Process and Technology. 2: 142-145. DOI: 10.4236/Jcpt.2012.24020 |
0.331 |
|
2011 |
Nguyen HPT, Chang Y, Shih I, Mi Z. InN p-i-n Nanowire Solar Cells on Si Ieee Journal of Selected Topics in Quantum Electronics. 17: 1062-1069. DOI: 10.1109/Jstqe.2010.2082505 |
0.352 |
|
2011 |
Qiu J, Shih A, Zhou W, Mi Z, Shih I. Effects of metal contacts and dopants on the performance of ZnO-based memristive devices Journal of Applied Physics. 110. DOI: 10.1063/1.3599952 |
0.309 |
|
2010 |
Myers HF, Champness CH, Shih I. Hall effect measurements on Bridgman-grown CuInSe2 with sodium. Nanotechnology. 21: 134004. PMID 20208101 DOI: 10.1088/0957-4484/21/13/134004 |
0.579 |
|
2007 |
Champness CH, Cheung T, Shih I. Room temperature transport measurements on Bridgman-grown p-type CuIn1-xGaxSe2 Solar Energy Materials and Solar Cells. 91: 791-800. DOI: 10.1016/J.Solmat.2007.01.010 |
0.327 |
|
2003 |
Greenspan JE, Blaauw C, Emmerstorfer B, Glew RW, Shih I. Analysis of a time-dependent supply mechanism in selective area growth by MOCVD Journal of Crystal Growth. 248: 405-410. DOI: 10.1016/S0022-0248(02)01845-6 |
0.619 |
|
2002 |
Gan FY, Shih I. Preparation of thin-film transistors with chemical bath deposited CdSe and CdS thin films Ieee Transactions On Electron Devices. 49: 15-18. DOI: 10.1109/16.974742 |
0.556 |
|
1999 |
Wang HP, Lam WW, Shih I. Crystal growth of Cu(In1-xGax)3Se5 by horizontal Bridgman method Journal of Crystal Growth. 200: 137-142. DOI: 10.1016/S0022-0248(98)01300-1 |
0.33 |
|
1998 |
Lam WW, Shih I. Crystal growth of CuGaxIn1−xSe2 by horizontal bridgman method Solar Energy Materials and Solar Cells. 50: 111-117. DOI: 10.1016/S0927-0248(97)00131-1 |
0.324 |
|
1998 |
Lam WW, Yip LS, Greenspan JE, Shih I. Deep level transient spectroscopy on ZnO/CdS/CuGaxIn1−xSe2 photovoltaic cells Solar Energy Materials and Solar Cells. 50: 57-62. DOI: 10.1016/S0927-0248(97)00121-9 |
0.303 |
|
1995 |
Shukri ZA, Yip LS, Qiu CX, Shih I, Champness CH. Preliminary photovoltaic cells with single crystal CIS substrates Solar Energy Materials and Solar Cells. 37: 395-401. DOI: 10.1016/0927-0248(95)00034-8 |
0.313 |
|
1995 |
Qiu SN, Li L, Qiu CX, Shih I, Champness CH. Study of CuInSe2 thin films prepared by electrodeposition Solar Energy Materials and Solar Cells. 37: 389-393. DOI: 10.1016/0927-0248(95)00033-X |
0.335 |
|
1993 |
Shukri ZA, Champness CH, Shih I. Boron nitride powder coating of ampoule for Bridgman-grown CuInSe2 Journal of Crystal Growth. 129: 107-110. DOI: 10.1016/0022-0248(93)90439-4 |
0.33 |
|
1993 |
Yip LS, Shih I, Champness CH. Method of avoiding ampoule adhesion of ingots in Bridgman growth of CuInSe2 Journal of Crystal Growth. 129: 102-106. DOI: 10.1016/0022-0248(93)90438-3 |
0.303 |
|
1986 |
Qiu CX, Shih I. Tin- and indium-doped zinc oxide films prepared by RF magnetron sputtering Solar Energy Materials. 13: 75-84. DOI: 10.1016/0165-1633(86)90036-5 |
0.307 |
|
1985 |
Vahid Shahidi A, Shih I, Champness CH. Photoconductivity and extrinsic doping of pCuInSe2 Solar Energy Materials. 12: 383-389. DOI: 10.1016/0165-1633(85)90008-5 |
0.313 |
|
1985 |
Shahidi AV, Shih I, Araki T, Champness CH. Structural and electronic properties of CuInSe2 Journal of Electronic Materials. 14: 297-310. DOI: 10.1007/Bf02661224 |
0.323 |
|
1984 |
Quang NV, Shih I, Champness CH. Growth of monocryatalline Te-rich SexTe1-x alloys Journal of Crystal Growth. 70: 529-532. DOI: 10.1016/0022-0248(84)90313-0 |
0.364 |
|
1984 |
Shih I, Champness CH, Sewell PB, Ding L. Autoepitaxy of tellurium using vacuum deposition Journal of Crystal Growth. 70: 523-528. DOI: 10.1016/0022-0248(84)90312-9 |
0.369 |
|
1984 |
Shih I, Shahidi AV, Champness CH. Preparation of crystalline CuInSe2 by directional freezing Journal of Crystal Growth. 70: 411-414. DOI: 10.1016/0022-0248(84)90295-1 |
0.333 |
|
1982 |
Shih I, Champness CH. Basal plane etch pit orientation effect in tellurium Journal of Crystal Growth. 56: 169-173. DOI: 10.1016/0022-0248(82)90026-4 |
0.326 |
|
1981 |
Shih I, Champness CH. Effect of thermal gradients during Czochralski growth of tellurium crystals Journal of Crystal Growth. 51: 195-202. DOI: 10.1016/0022-0248(81)90302-X |
0.346 |
|
1981 |
Shih I, Champness CH. Czochralski growth of SexTe1-x crystals of low Te and low Se content Journal of Crystal Growth. 53: 611-619. DOI: 10.1016/0022-0248(81)90147-0 |
0.357 |
|
1979 |
Shih I, Champness CH. Etch pit orientation in czochralski-grown tellurium crystals Journal of Crystal Growth. 46: 458-460. DOI: 10.1016/0022-0248(79)90096-4 |
0.342 |
|
1978 |
Shih I, Champness CH. Czochralski growth of tellurium single crystals Journal of Crystal Growth. 44: 492-498. DOI: 10.1016/0022-0248(78)90016-7 |
0.353 |
|
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