| Year |
Citation |
Score |
| 2016 |
Ma X, Guan L, Xuan J, Wang H, Yuan Z, Wu M, Liu R, Zhu C, Wei C, Zhao F, Du L, Zhang L. Effect of polymorphisms in the CAMKMT gene on growth traits in Ujumqin sheep. Animal Genetics. PMID 27435482 DOI: 10.1111/age.12455 |
0.341 |
|
| 2010 |
Tian B, Wu Y, Huang H, Guan L, Sin JKO, Kang B. A New 20 V-Rated Buried-Oxide Trench-Gate Bipolar-Mode JFET FOR DC/DC Converters Ieee Transactions On Electron Devices. 57: 3531-3535. DOI: 10.1109/Ted.2010.2076090 |
0.4 |
|
| 2009 |
Sun J, Jiang FXC, Guan L, Xiong Z, Yan G, Sin JKO. A New Isolation Technology for Automotive Power-Integrated-Circuit Applications Ieee Transactions On Electron Devices. 56: 2144-2149. DOI: 10.1109/Ted.2009.2026089 |
0.504 |
|
| 2008 |
Ng JCW, Sin JKO, Guan L. A Novel Planar Power MOSFET With Laterally Uniform Body and Ion-Implanted JFET Region Ieee Electron Device Letters. 29: 375-377. DOI: 10.1109/Led.2008.917818 |
0.383 |
|
| 2007 |
Guan L, Sin JKO. Transient Characterization of the Planar DMOS With a Metal/Poly-Si Replacement Gate Ieee Transactions On Electron Devices. 54: 1789-1792. DOI: 10.1109/Ted.2007.899426 |
0.393 |
|
| 2006 |
Guan L, Sin JKO, Liu H, Xiong Z. A fully integrated SOI RF MEMS technology for system-on-a-chip applications Ieee Transactions On Electron Devices. 53: 167-172. DOI: 10.1109/Ted.2005.860638 |
0.534 |
|
| 2006 |
Guan L, Sin JKO. A 30 V Self-Aligned Metal/Poly-Si Replacement Gate Planar DMOS for DC/DC Converters Ieee Electron Device Letters. 27: 920-922. DOI: 10.1109/Led.2006.884719 |
0.395 |
|
| 2005 |
Guan L, Sin JKO, Xiong Z, Liu H. A novel SOI lateral-power MOSFET with a self-aligned drift region Ieee Electron Device Letters. 26: 264-266. DOI: 10.1109/Led.2005.844717 |
0.509 |
|
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