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Ramakrishnan Vaidyanathan, Ph.D. - Publications

Affiliations: 
2007 University of Illinois, Urbana-Champaign, Urbana-Champaign, IL 
Area:
Chemical Engineering
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9 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Seebauer EG, Jung MYL, Kwok CTM, Vaidyanathan R, Kondratenko YV. Measurement of photostimulated self-diffusion in silicon Journal of Applied Physics. 109. DOI: 10.1063/1.3590710  0.634
2011 Vaidyanathan R, Felch S, Graoui H, Foad MA, Kondratenko Y, Seebauer EG. Nonthermal illumination effects on ultra-shallow junction formation Applied Physics Letters. 98. DOI: 10.1063/1.3571279  0.632
2010 Chen K, Vaidyanathan R, Seebauer EG, Braatz RD. General expression for effective diffusivity of foreign atoms migrating via a fast intermediate Journal of Applied Physics. 107. DOI: 10.1063/1.3294479  0.701
2007 Vaidyanathan R, Jung MYL, Seebauer EG. Mechanism and energetics of self-interstitial formation and diffusion in silicon Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.195209  0.742
2007 Yeong SH, Srinivasan MP, Colombeau B, Chan L, Akkipeddi R, Kwok CTM, Vaidyanathan R, Seebauer EG. Defect engineering by surface chemical state in boron-doped preamorphized silicon Applied Physics Letters. 91. DOI: 10.1063/1.2780080  0.652
2006 Seebauer EG, Dev K, Jung MY, Vaidyanathan R, Kwok CT, Ager JW, Haller EE, Braatz RD. Control of defect concentrations within a semiconductor through adsorption. Physical Review Letters. 97: 055503. PMID 17026112 DOI: 10.1103/Physrevlett.97.055503  0.65
2006 Zhang X, Yu M, Kwok CTM, Vaidyanathan R, Braatz RD, Seebauer EG. Precursor mechanism for interaction of bulk interstitial atoms with Si(100) Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.235301  0.65
2006 Vaidyanathan R, Seebauer EG, Graoui H, Foad MA. Influence of surface adsorption in improving ultrashallow junction formation Applied Physics Letters. 89. DOI: 10.1063/1.2360917  0.636
2006 Vaidyanathan R, Jung MYL, Braatz RD, Seebauer EG. Measurement of defect-mediated diffusion: The case of silicon self-diffusion Aiche Journal. 52: 366-370. DOI: 10.1002/Aic.10587  0.722
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