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Xiaojun Weng, Ph.D. - Publications

Affiliations: 
2003 University of Michigan, Ann Arbor, Ann Arbor, MI 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
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55 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Ke Y, Hainey M, Won D, Weng X, Eichfeld SM, Redwing JM. Carrier gas effects on aluminum-catalyzed nanowire growth. Nanotechnology. 27: 135605. PMID 26900836 DOI: 10.1088/0957-4484/27/13/135605  0.326
2015 Wang X, Ke Y, Kendrick CE, Weng X, Shen H, Kuo M, Mayer TS, Redwing JM. The effects of shell layer morphology and processing on the electrical and photovoltaic properties of silicon nanowire radial p+ - n+ junctions. Nanoscale. 7: 7267-74. PMID 25811140 DOI: 10.1039/C5Nr00512D  0.428
2013 Won D, Weng X, Al Balushi ZY, Redwing JM. Influence of growth stress on the surface morphology of N-polar GaN films grown on vicinal C-face SiC substrates Applied Physics Letters. 103. DOI: 10.1063/1.4845575  0.425
2013 Tungare M, Weng X, Leathersich JM, Suvarna P, Redwing JM, Shahedipour-Sandvik F. Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate Journal of Applied Physics. 113. DOI: 10.1063/1.4798598  0.457
2013 Won D, Weng X, Yuwen YA, Ke Y, Kendrick C, Shen H, Mayer TS, Redwing JM. GaN growth on Si pillar arrays by metalorganic chemical vapor deposition Journal of Crystal Growth. 370: 259-264. DOI: 10.1016/J.Jcrysgro.2012.10.004  0.454
2013 Leathersich JM, Tungare M, Weng X, Suvarna P, Agnihotri P, Evans M, Redwing J, Shahedipour-Sandvik F. Ion-implantation-induced damage characteristics within AlN and si for GaN-on-Si epitaxy Journal of Electronic Materials. 42: 833-837. DOI: 10.1007/S11664-013-2491-5  0.405
2012 Howsare CA, Weng X, Bojan V, Snyder D, Robinson JA. Substrate considerations for graphene synthesis on thin copper films. Nanotechnology. 23: 135601. PMID 22418897 DOI: 10.1088/0957-4484/23/13/135601  0.39
2012 Redwing JM, Manning IC, Weng X, Eichfeld SM, Acord JD, Fanton MA, Snyder DW. Effects of silicon doping and threading dislocation density on stress evolution in AlGaN films Materials Research Society Symposium Proceedings. 1396: 183-191. DOI: 10.1557/Opl.2012.215  0.47
2012 Weng X, Grave DA, Hughes ZR, Wolfe DE, Robinson JA. Microstructure, phase transition, and interfacial chemistry of Gd 2O 3/Si(111) grown by electron-beam physical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.4726266  0.444
2012 Abraham M, Weng X, Hyuck Choi W, Downey BP, Mohney SE. Extreme sensitivity of contact resistance to variations in the interfacial composition of Ti/Al-based contacts to N-face GaN/AlGaN heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4770365  0.341
2012 Brom JE, Ke Y, Du R, Won D, Weng X, Andre K, Gagnon JC, Mohney SE, Li Q, Chen K, Xi XX, Redwing JM. Structural and electrical properties of epitaxial Bi 2Se 3 thin films grown by hybrid physical-chemical vapor deposition Applied Physics Letters. 100. DOI: 10.1063/1.4704680  0.447
2012 Weng X, Robinson JA, Trumbull K, Cavalero R, Fanton MA, Snyder D. Epitaxial graphene on SiC(0001̄): Stacking order and interfacial structure Applied Physics Letters. 100. DOI: 10.1063/1.3678021  0.381
2012 Won D, Weng X, Redwing JM. Metalorganic chemical vapor deposition of N-polar GaN films on vicinal SiC substrates using indium surfactants Applied Physics Letters. 100. DOI: 10.1063/1.3676275  0.416
2012 Grave DA, Hughes ZR, Robinson JA, Medill TP, Hollander MJ, Stump AL, Labella M, Weng X, Wolfe DE. Process-structure-property relations of micron thick Gd 2O 3 films deposited by reactive electron-beam physical vapor deposition (EB-PVD) Surface and Coatings Technology. 206: 3094-3103. DOI: 10.1016/J.Surfcoat.2011.12.031  0.424
2012 Raghavan S, Manning IC, Weng X, Redwing JM. Dislocation bending and tensile stress generation in GaN and AlGaN films Journal of Crystal Growth. 359: 35-42. DOI: 10.1016/J.Jcrysgro.2012.08.020  0.436
2012 Gagnon JC, Tungare M, Weng X, Leathersich JM, Shahedipour-Sandvik F, Redwing JM. In situ stress measurements during GaN growth on ion-implanted AlN/Si substrates Journal of Electronic Materials. 41: 865-872. DOI: 10.1007/S11664-011-1852-1  0.438
2011 Chen K, Zhuang CG, Li Q, Weng X, Redwing JM, Zhu Y, Voyles PM, Xi XX. MgB2/MgO/MgB2 josephson junctions for high-speed circuits Ieee Transactions On Applied Superconductivity. 21: 115-118. DOI: 10.1109/Tasc.2010.2093853  0.395
2011 Dai W, Ferrando V, Pogrebnyakov AV, Wilke RHT, Chen K, Weng X, Redwing J, Bark CW, Eom CB, Zhu Y, Voyles PM, Rickel D, Betts JB, Mielke CH, Gurevich A, et al. High-field properties of carbon-doped MgB2 thin films by hybrid physical-chemical vapor deposition using different carbon sources Superconductor Science and Technology. 24. DOI: 10.1088/0953-2048/24/12/125014  0.375
2011 Wood AW, Weng X, Wang YQ, Goldman RS. Formation mechanisms of embedded wurtzite and zincblende indium nitride nanocrystals Applied Physics Letters. 99. DOI: 10.1063/1.3617464  0.53
2011 Rathi SJ, Jariwala BN, Beach JD, Stradins P, Taylor PC, Weng X, Ke Y, Redwing JM, Agarwal S, Collins RT. Tin-catalyzed plasma-assisted growth of silicon nanowires Journal of Physical Chemistry C. 115: 3833-3839. DOI: 10.1021/Jp1066428  0.358
2011 Eichfeld SM, Won D, Trumbull K, Labella M, Weng X, Robinson J, Snyder D, Redwing JM, Paskova T, Udwary K, Mulholland G, Preble E, Evans KR. Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2053-2055. DOI: 10.1002/Pssc.201001059  0.442
2010 Robinson JA, Labella M, Trumbull KA, Weng X, Cavelero R, Daniels T, Hughes Z, Hollander M, Fanton M, Snyder D. Epitaxial graphene materials integration: effects of dielectric overlayers on structural and electronic properties. Acs Nano. 4: 2667-72. PMID 20415460 DOI: 10.1021/Nn1003138  0.364
2010 Robinson J, Weng X, Trumbull K, Cavalero R, Wetherington M, Frantz E, Labella M, Hughes Z, Fanton M, Snyder D. Nucleation of epitaxial graphene on SiC(0001). Acs Nano. 4: 153-8. PMID 20000439 DOI: 10.1021/Nn901248J  0.343
2010 Kendrick CE, Eichfeld SM, Ke Y, Weng X, Wang X, Mayer TS, Redwing JM. Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells Proceedings of Spie - the International Society For Optical Engineering. 7768. DOI: 10.1117/12.861571  0.431
2010 Moon JS, Curtis D, Bui S, Marshall T, Wheeler D, Valles I, Kim S, Wang E, Weng X, Fanton M. Top-Gated Graphene Field-Effect Transistors Using Graphene on Si (111) Wafers Ieee Electron Device Letters. 31: 1193-1195. DOI: 10.1109/Led.2010.2065792  0.376
2010 Moon JS, Curtis D, Bui S, Hu M, Gaskill DK, Tedesco JL, Asbeck P, Jernigan GG, Vanmil BL, Myers-Ward RL, Eddy CR, Campbell PM, Weng X. Top-gated epitaxial graphene FETs on si-face sic wafers with a peak transconductance of 600 mS/mm Ieee Electron Device Letters. 31: 260-262. DOI: 10.1109/Led.2010.2040132  0.355
2010 Weng X, Robinson JA, Trumbull K, Cavalero R, Fanton MA, Snyder D. Structure of few-layer epitaxial graphene on 6H -SiC(0001) at atomic resolution Applied Physics Letters. 97. DOI: 10.1063/1.3517505  0.356
2010 Won D, Weng X, Redwing JM. Effect of indium surfactant on stress relaxation by V-defect formation in GaN epilayers grown by metalorganic chemical vapor deposition Journal of Applied Physics. 108. DOI: 10.1063/1.3487955  0.453
2010 Weng X, Tian W, Schlom DG, Dickey EC. Structure and chemistry of the (111) Sc2 O3 / (0001) GaN epitaxial interface Applied Physics Letters. 96. DOI: 10.1063/1.3454924  0.336
2010 Chen K, Zhuang CG, Li Q, Zhu Y, Voyles PM, Weng X, Redwing JM, Singh RK, Kleinsasser AW, Xi XX. High-Jc MgB2 Josephson junctions with operating temperature up to 40 K Applied Physics Letters. 96: 042506. DOI: 10.1063/1.3298366  0.338
2010 Weng X, Burke RA, Dickey EC, Redwing JM. Effect of reactor pressure on catalyst composition and growth of GaSb nanowires Journal of Crystal Growth. 312: 514-519. DOI: 10.1016/J.Jcrysgro.2009.11.035  0.311
2010 Manning IC, Weng X, Fanton MA, Snyder DW, Redwing JM. Effects of composition on dislocation microstructure and stress in Si-doped AlxGa1-xN Journal of Crystal Growth. 312: 1301-1306. DOI: 10.1016/J.Jcrysgro.2009.11.024  0.397
2010 Burke RA, Weng X, Kuo MW, Song YW, Itsuno AM, Mayer TS, Durbin SM, Reeves RJ, Redwing JM. Growth and characterization of unintentionally doped GaSb nanowires Journal of Electronic Materials. 39: 355-364. DOI: 10.1007/S11664-010-1140-5  0.389
2009 Ke Y, Weng X, Redwing JM, Eichfeld CM, Swisher TR, Mohney SE, Habib YM. Fabrication and electrical properties of si nanowires synthesized by Al catalyzed vapor-liquid-solid growth. Nano Letters. 9: 4494-9. PMID 19904918 DOI: 10.1021/Nl902808R  0.381
2009 Robinson JA, Wetherington M, Tedesco JL, Campbell PM, Weng X, Stitt J, Fanton MA, Frantz E, Snyder D, VanMil BL, Jernigan GG, Myers-Ward RL, Eddy CR, Gaskill DK. Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale. Nano Letters. 9: 2873-6. PMID 19719106 DOI: 10.1021/Nl901073G  0.346
2009 Weng X, Burke RA, Redwing JM. The nature of catalyst particles and growth mechanisms of GaN nanowires grown by Ni-assisted metal-organic chemical vapor deposition. Nanotechnology. 20: 085610. PMID 19417458 DOI: 10.1088/0957-4484/20/8/085610  0.335
2009 Allen MW, Weng X, Redwing JM, Sarpatwari K, Mohney SE, von Wenckstern H, Grundmann M, Durbin SM. Temperature-dependent properties of nearly ideal ZnO schottky diodes Ieee Transactions On Electron Devices. 56: 2160-2164. DOI: 10.1109/Ted.2009.2026393  0.31
2009 Manning IC, Weng X, Acord JD, Fanton MA, Snyder DW, Redwing JM. Tensile stress generation and dislocation reduction in Si-doped Al x Ga1-x N films Journal of Applied Physics. 106. DOI: 10.1063/1.3160331  0.463
2009 Burke RA, Lamborn DR, Weng X, Redwing JM. Growth and process modeling studies of nickel-catalyzed metalorganic chemical vapor deposition of GaN nanowires Journal of Crystal Growth. 311: 3409-3416. DOI: 10.1016/J.Jcrysgro.2009.03.050  0.438
2008 Acord JD, Manning IC, Weng X, Snyder DW, Redwing JM. In situ measurement of stress generation arising from dislocation inclination in AlxGa1-xN:Si thin films Applied Physics Letters. 93. DOI: 10.1063/1.2986448  0.452
2008 Jain A, Weng X, Raghavan S, Vanmil BL, Myers T, Redwing JM. Effect of polarity on the growth of InN films by metalorganic chemical vapor deposition Journal of Applied Physics. 104. DOI: 10.1063/1.2973681  0.376
2008 Fisher P, Du H, Skowronski M, Salvador PA, Maksimov O, Weng X. Stoichiometric, nonstoichiometric, and locally nonstoichiometric SrTiO3 films grown by molecular beam epitaxy Journal of Applied Physics. 103. DOI: 10.1063/1.2827992  0.428
2008 Maksimov O, Fisher P, Skowronski M, Salvador PA, Snyder M, Xu J, Weng X. MgO films grown on yttria-stabilized zirconia by molecular beam epitaxy Journal of Crystal Growth. 310: 2760-2766. DOI: 10.1016/J.Jcrysgro.2008.02.013  0.422
2008 Acord JD, Weng X, Dickey EC, Snyder DW, Redwing JM. Effects of a compositionally graded buffer layer on stress evolution during GaN and AlxGa1-xN MOCVD on SiC substrates Journal of Crystal Growth. 310: 2314-2319. DOI: 10.1016/J.Jcrysgro.2007.11.153  0.431
2008 Weng X, Fisher P, Skowronski M, Salvador PA, Maksimov O. Structural characterization of TiO2 films grown on LaAlO3 and SrTiO3 substrates using reactive molecular beam epitaxy Journal of Crystal Growth. 310: 545-550. DOI: 10.1016/J.Jcrysgro.2007.10.084  0.403
2007 Xi XX, Pogrebnyakov AV, Xu SY, Chen K, Cui Y, Maertz EC, Zhuang CG, Li Q, Lamborn DR, Redwing JM, Liu ZK, Soukiassian A, Schlom DG, Weng XJ, Dickey EC, et al. MgB2 thin films by hybrid physical-chemical vapor deposition Physica C: Superconductivity and Its Applications. 456: 22-37. DOI: 10.1016/J.Physc.2007.01.029  0.302
2007 Weng X, Raghavan S, Acord JD, Jain A, Dickey EC, Redwing JM. Evolution of threading dislocations in MOCVD-grown GaN films on (1 1 1) Si substrates Journal of Crystal Growth. 300: 217-222. DOI: 10.1016/J.Jcrysgro.2006.11.030  0.448
2007 Sheldon BW, Bhandari A, Bower AF, Raghavan S, Weng X, Redwing JM. Steady-state tensile stresses during the growth of polycrystalline films Acta Materialia. 55: 4973-4982. DOI: 10.1016/J.Actamat.2007.05.008  0.384
2007 Weng X, Acord JD, Jain A, Dickey EC, Redwing JM. Evolution of threading dislocation density and stress in GaN films grown on (111) Si substrates by metalorganic chemical vapor deposition Journal of Electronic Materials. 36: 346-352. DOI: 10.1007/S11664-006-0055-7  0.404
2006 Weng X, Raghavan S, Dickey EC, Redwing JM. Stress and microstructure evolution in compositionally graded Al 1-xGaxN buffer layers for GaN growth on Si Materials Research Society Symposium Proceedings. 892: 27-32. DOI: 10.1557/Proc-0892-Ff02-02  0.398
2006 Maksimov O, Fisher P, Du H, Acord JD, Weng X, Skowronski M, Heydemann VD. Growth of GaN films on GaAs substrates in an As-free environment Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1671-1675. DOI: 10.1116/1.2192538  0.379
2006 Chen K, Cui Y, Li Q, Xi XX, Cybart SA, Dynes RC, Weng X, Dickey EC, Redwing JM. Planar MgB 2 superconductor-normal metal-superconductor Josephson junctions fabricated using epitaxial MgB 2/TiB 2 bilayers Applied Physics Letters. 88. DOI: 10.1063/1.2208555  0.347
2006 Raghavan S, Weng X, Dickey E, Redwing JM. Correlation of growth stress and structural evolution during metalorganic chemical vapor deposition of GaN on (111) Si Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2168020  0.45
2006 Weng X, Acord J, Jain A, Raghavan S, Redwing J, Dickey E. Evolution of threading dislocations in GaN films grown on (111) Si substrates with various buffer layers Microscopy and Microanalysis. 12: 906-907. DOI: 10.1017/S1431927606065524  0.469
2005 Raghavan S, Weng X, Dickey E, Redwing JM. Effect of AlN interlayers on growth stress in GaN layers deposited on (111) Si Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2081128  0.452
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