| Year |
Citation |
Score |
| 2020 |
Chen P, Park YJ, Liu Y, Detchprohm T, Yoder PD, Shen S, Dupuis RD. Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures Journal of Electronic Materials. 49: 2326-2331. DOI: 10.1007/S11664-019-07932-X |
0.401 |
|
| 2019 |
Key D, Letts E, Tsou CW, Ji MH, Bakhtiary-Noodeh M, Detchprohm T, Shen SC, Dupuis R, Hashimoto T. Structural and Electrical Characterization of 2" Ammonothermal Free-Standing GaN Wafers. Progress toward Pilot Production. Materials (Basel, Switzerland). 12. PMID 31207922 DOI: 10.3390/Ma12121925 |
0.445 |
|
| 2019 |
Li X, Dupuis RD, Wernicke T. Semiconductor UV photonics: feature introduction Photonics Research. 7. DOI: 10.1364/Prj.7.0Suvp1 |
0.326 |
|
| 2019 |
Tsou C, Ji M, Bakhtiary-Noodeh M, Detchprohm T, Dupuis RD, Shen S. Temperature-Dependent Leakage Current Characteristics of Homojunction GaN p-i-n Rectifiers Using Ion-Implantation Isolation Ieee Transactions On Electron Devices. 66: 4273-4278. DOI: 10.1109/Ted.2019.2933421 |
0.376 |
|
| 2019 |
Mehta K, Liu Y, Wang J, Jeong H, Detchprohm T, Dupuis RD, Yoder PD. Thermal Design Considerations for III-N Vertical-Cavity Surface-Emitting Lasers Using Electro-Opto-Thermal Numerical Simulations Ieee Journal of Quantum Electronics. 55: 1-8. DOI: 10.1109/Jqe.2019.2937991 |
0.311 |
|
| 2018 |
Ji M, Kim J, Detchprohm T, Zhu Y, Shen S, Dupuis RD. p-i-p-i-n Separate Absorption and Multiplication Ultraviolet Avalanche Photodiodes Ieee Photonics Technology Letters. 30: 181-184. DOI: 10.1109/Lpt.2017.2779798 |
0.459 |
|
| 2018 |
Mehta K, Liu Y, Wang J, Jeong H, Detchprohm T, Park YJ, Alugubelli SR, Wang S, Ponce FA, Shen S, Dupuis RD, Yoder PD. Theory and Design of Electron Blocking Layers for III-N-Based Laser Diodes by Numerical Simulation Ieee Journal of Quantum Electronics. 54: 1-11. DOI: 10.1109/Jqe.2018.2876662 |
0.38 |
|
| 2018 |
Mehta K, Liu Y, Wang J, Jeong H, Detchprohm T, Park YJ, Alugubelli SR, Wang S, Ponce FA, Shen S, Dupuis RD, Yoder PD. Lateral Current Spreading in III-N Ultraviolet Vertical-Cavity Surface-Emitting Lasers Using Modulation-Doped Short Period Superlattices Ieee Journal of Quantum Electronics. 54: 1-7. DOI: 10.1109/Jqe.2018.2836667 |
0.451 |
|
| 2018 |
Dallas J, Pavlidis G, Chatterjee B, Lundh JS, Ji M, Kim J, Kao T, Detchprohm T, Dupuis RD, Shen S, Graham S, Choi S. Thermal characterization of gallium nitride p-i-n diodes Applied Physics Letters. 112: 73503. DOI: 10.1063/1.5006796 |
0.366 |
|
| 2017 |
Greenlee JD, Nath A, Anderson TJ, Feigelson BN, Koehler AD, Hobart KD, Dupuis RD, Detchprohm T, Shen SC, Kub FJ. NbN Capping Layer for Enhanced Thermal Processing of Group III-Nitride Semiconductor Devices Ecs Journal of Solid State Science and Technology. 6. DOI: 10.1149/2.0141702Jss |
0.366 |
|
| 2017 |
Liu Y, Kao T, Zhu Y, Park YJ, Mehta K, Wang S, Shen S, Yoder D, Ponce FA, Detchprohm T, Dupuis RD. Ultraviolet microcavity light-emitting diode with ion-implanted current aperture (Conference Presentation) Proceedings of Spie. 10104: 1010405. DOI: 10.1117/12.2249958 |
0.452 |
|
| 2017 |
Mehta K, Detchprohm T, Park YJ, Liu Y, Moreno O, Alugubelli SR, Wang S, Ponce FA, Shen S, Dupuis RD, Yoder PD. High Reflectivity Hybrid AlGaN/Silver Distributed Bragg Reflectors for Use in the UV-Visible Spectrum Ieee Journal of Quantum Electronics. 53: 1-8. DOI: 10.1109/Jqe.2017.2766288 |
0.424 |
|
| 2017 |
Sun H, Wu F, Al tahtamouni TM, Alfaraj N, Li K, Detchprohm T, Dupuis RD, Li X. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate Journal of Physics D: Applied Physics. 50: 395101. DOI: 10.1088/1361-6463/Aa8503 |
0.327 |
|
| 2017 |
Sun H, Park YJ, Li K, Torres Castanedo CG, Alowayed A, Detchprohm T, Dupuis RD, Li X. Band alignment of B0.14Al0.86N/Al0.7Ga0.3N heterojunction Applied Physics Letters. 111: 122106. DOI: 10.1063/1.4999249 |
0.383 |
|
| 2017 |
Detchprohm T, Liu YS, Mehta K, Wang S, Xie H, Kao TT, Shen SC, Yoder PD, Ponce F, Dupuis RD. Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors Applied Physics Letters. 110: 11105. DOI: 10.1063/1.4973581 |
0.443 |
|
| 2017 |
Wang S, Li X, Fischer AM, Detchprohm T, Dupuis RD, Ponce FA. Crystal structure and composition of BAlN thin films: Effect of boron concentration in the gas flow Journal of Crystal Growth. 475: 334-340. DOI: 10.1016/J.Jcrysgro.2017.07.013 |
0.312 |
|
| 2017 |
Detchprohm T, Li X, Shen S-, Yoder PD, Dupuis RD. III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors Semiconductors and Semimetals. 96: 121-166. DOI: 10.1016/Bs.Semsem.2016.09.001 |
0.348 |
|
| 2016 |
Liu YS, Haq AFMS, Mehta K, Kao TT, Wang S, Xie H, Shen SC, Yoder PD, Ponce F, Detchprohm T, Dupuis RD. Optically pumped vertical-cavity surface-emitting laser at 374.9 nm with an electrically conducting n-type distributed Bragg reflector Applied Physics Express. 9: 111002. DOI: 10.7567/Apex.9.111002 |
0.377 |
|
| 2016 |
Liu YS, Kao TT, Mehta K, Shen SC, Yoder PD, Detchprohm T, Dupuis RD, Xie H, Ponce FA. Development for ultraviolet vertical cavity surface emitting lasers Proceedings of Spie - the International Society For Optical Engineering. 9748. DOI: 10.1117/12.2212617 |
0.451 |
|
| 2016 |
Kao TT, Kim J, Detchprohm T, Dupuis RD, Shen SC. High-Responsivity GaN/InGaN Heterojunction Phototransistors Ieee Photonics Technology Letters. 28: 2035-2038. DOI: 10.1109/Lpt.2016.2582702 |
0.419 |
|
| 2016 |
Ji MH, Kim J, Detchprohm T, Dupuis RD, Sood AK, Dhar NK, Lewis J. Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays Ieee Photonics Technology Letters. 28: 2015-2018. DOI: 10.1109/Lpt.2016.2580038 |
0.418 |
|
| 2016 |
Liu YS, Wang S, Xie H, Kao TT, Mehta K, Jia XJ, Shen SC, Yoder PD, Ponce FA, Detchprohm T, Dupuis RD. Strain management of AlGaN-based distributed Bragg reflectors with GaN interlayer grown by metalorganic chemical vapor deposition Applied Physics Letters. 109. DOI: 10.1063/1.4961634 |
0.394 |
|
| 2016 |
Kim S, Ryou JH, Dupuis RD, Kim H. Reduced gate leakage current of AlInN:Mg/GaN high electron mobility transistors Electronics Letters. 52: 157-159. DOI: 10.1049/El.2015.3430 |
0.608 |
|
| 2016 |
Liu YS, Haq AFMS, Kao TT, Mehta K, Shen SC, Detchprohm T, Yoder PD, Dupuis RD, Xie H, Ponce FA. Electrically conducting n-type AlGaN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 443: 81-84. DOI: 10.1016/J.Jcrysgro.2016.03.027 |
0.454 |
|
| 2016 |
Kim J, Ji MH, Detchprohm T, Dupuis RD, Shervin S, Ryou JH. Effect of lattice-matched InAlGaN electron-blocking layer on hole transport and distribution in InGaN/GaN multiple quantum wells of visible light-emitting diodes Physica Status Solidi (a) Applications and Materials Science. 213: 1296-1301. DOI: 10.1002/Pssa.201532764 |
0.602 |
|
| 2015 |
Yu YJ, Kim KS, Nam J, Kwon SR, Byun H, Lee K, Ryou JH, Dupuis RD, Kim J, Ahn G, Ryu S, Ryu MY, Kim JS. Temperature-dependent resonance energy transfer from semiconductor quantum wells to graphene. Nano Letters. 15: 896-902. PMID 25562118 DOI: 10.1021/Nl503624J |
0.532 |
|
| 2015 |
Kim J, Ji MH, Detchprohm T, Dupuis RD, Ryou JH, Sood AK, Dhar ND, Lewis J. Comparison of AlGaN p-i-n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates Applied Physics Express. 8. DOI: 10.7567/Apex.8.122202 |
0.647 |
|
| 2015 |
Shen SC, Kao TT, Kim HJ, Lee YC, Kim J, Ji MH, Ryou JH, Detchprohm T, Dupuis RD. GaN/InGaN avalanche phototransistors Applied Physics Express. 8. DOI: 10.7567/Apex.8.032101 |
0.607 |
|
| 2015 |
Li X, Sundaram S, Disseix P, Le Gac G, Bouchoule S, Patriarche G, Réveret F, Leymarie J, El Gmili Y, Moudakir T, Genty F, Salvestrini JP, Dupuis RD, Voss PL, Ougazzaden A. AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm Optical Materials Express. 5: 380-392. DOI: 10.1364/Ome.5.000380 |
0.48 |
|
| 2015 |
Sood AK, Zeller JW, Welser RE, Puri YR, Dupuis RD, Ji MH, Kim J, Detchprohm T, Dhar NK, Lewis JS, Peters RL. Development of high gain avalanche photodiodes for UV imaging applications Proceedings of Spie - the International Society For Optical Engineering. 9609. DOI: 10.1117/12.2193182 |
0.459 |
|
| 2015 |
Kao TT, Kim J, Lee YC, Haq AFMS, Ji MH, Detchprohm T, Dupuis RD, Shen SC. Temperature-Dependent Characteristics of GaN Homojunction Rectifiers Ieee Transactions On Electron Devices. 62: 2679-2683. DOI: 10.1109/Ted.2015.2443135 |
0.356 |
|
| 2015 |
Liu YS, Kao TT, Satter MM, Lochner Z, Shen SC, Detchprohm T, Yoder PD, Dupuis RD, Ryou JH, Fischer AM, Wei YO, Xie H, Ponce FA. Inverse-Tapered p-Waveguide for Vertical Hole Transport in High-[Al] AlGaN Emitters Ieee Photonics Technology Letters. 27: 1768-1771. DOI: 10.1109/Lpt.2015.2443053 |
0.626 |
|
| 2015 |
Kim J, Ji MH, Detchprohm T, Ryou JH, Dupuis RD, Sood AK, Dhar NK. AlxGa1-xN ultraviolet avalanche photodiodes with avalanche gain greater than 105 Ieee Photonics Technology Letters. 27: 642-645. DOI: 10.1109/Lpt.2015.2388552 |
0.657 |
|
| 2015 |
Liu H, Yue N, Zhang Y, Qiao P, Zuo D, Kesler B, Chuang SL, Ryou JH, Justice JD, Dupuis R. Lattice vibration modes in type-II superlattice InAs/GaSb with no-common-atom interface and overlapping vibration spectra Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.235317 |
0.466 |
|
| 2015 |
Kao TT, Lee YC, Kim HJ, Ryou JH, Kim J, Detchprohm T, Dupuis RD, Shen SC. Radiative recombination in GaN/InGaN heterojunction bipolar transistors Applied Physics Letters. 107. DOI: 10.1063/1.4938147 |
0.562 |
|
| 2015 |
Li X, Xie H, Ponce FA, Ryou JH, Detchprohm T, Dupuis RD. Onset of surface stimulated emission at 260 nm from AlGaN multiple quantum wells Applied Physics Letters. 107. DOI: 10.1063/1.4938136 |
0.622 |
|
| 2015 |
Kim J, Ji MH, Detchprohm T, Dupuis RD, Fischer AM, Ponce FA, Ryou JH. Effect of Group-III precursors on unintentional gallium incorporation during epitaxial growth of InAlN layers by metalorganic chemical vapor deposition Journal of Applied Physics. 118. DOI: 10.1063/1.4931456 |
0.557 |
|
| 2015 |
Li XH, Kao TT, Satter MM, Wei YO, Wang S, Xie H, Shen SC, Yoder PD, Fischer AM, Ponce FA, Detchprohm T, Dupuis RD. Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate Applied Physics Letters. 106. DOI: 10.1063/1.4906590 |
0.402 |
|
| 2015 |
Li X, Le Gac G, Bouchoule S, El Gmili Y, Patriarche G, Sundaram S, Disseix P, Réveret F, Leymarie J, Streque J, Genty F, Salvestrini JP, Dupuis RD, Li XH, Voss PL, et al. Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm Journal of Crystal Growth. 432: 37-44. DOI: 10.1016/J.Jcrysgro.2015.09.013 |
0.472 |
|
| 2015 |
Li XH, Wei YO, Wang S, Xie H, Kao TT, Satter MM, Shen SC, Yoder PD, Detchprohm T, Dupuis RD, Fischer AM, Ponce FA. Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition Journal of Crystal Growth. 414: 76-80. DOI: 10.1016/J.Jcrysgro.2014.10.007 |
0.375 |
|
| 2015 |
Li X, Sundaram S, El Gmili Y, Genty F, Bouchoule S, Patriache G, Disseix P, Réveret F, Leymarie J, Salvestrini JP, Dupuis RD, Voss PL, Ougazzaden A. MOVPE grown periodic AlN/BAlN heterostructure with high boron content Journal of Crystal Growth. 414: 119-122. DOI: 10.1016/J.Jcrysgro.2014.09.030 |
0.4 |
|
| 2015 |
Dupuis RD, Ponce FA. Growth of III-Nitrides Physica Status Solidi (C) Current Topics in Solid State Physics. 12: 331-333. DOI: 10.1002/Pssc.201570083 |
0.368 |
|
| 2015 |
Li XH, Wang S, Xie H, Wei YO, Kao TT, Satter MM, Shen SC, Yoder PD, Detchprohm T, Dupuis RD, Fischer AM, Ponce FA. Growth of high-quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition Physica Status Solidi (B) Basic Research. 252: 1089-1095. DOI: 10.1002/Pssb.201451571 |
0.447 |
|
| 2015 |
Li X, Sundaram S, Gmili YE, Moudakir T, Genty F, Bouchoule S, Patriarche G, Dupuis RD, Voss PL, Salvestrini JP, Ougazzaden A. BAlN thin layers for deep UV applications Physica Status Solidi (a) Applications and Materials Science. 212: 745-750. DOI: 10.1002/Pssa.201400199 |
0.415 |
|
| 2014 |
Ryou JH, Kim J, Choi S, Kim HJ, Lochner Z, Ji MH, Satter MM, Detchprohm T, Yoder PD, Dupuis RD, Asadirad M, Liu JP, Kim JS, Fischere AM, Juday R, et al. Carrier dynamics and photon management for improvement in quantum efficiencies of GaN-based visible light-emitting diodes Ecs Transactions. 61: 109-116. DOI: 10.1149/06104.0109ecst |
0.512 |
|
| 2014 |
Liu YS, Kao TT, Satter MM, Lochner Z, Li XH, Shen SC, Yoder PD, Detchprohm T, Dupuis RD, Wei Y, Xie H, Fischer A, Ponce FA. Optically pumped deep-ultraviolet AlGaN multi-quantum-well lasers grown by metalorganic chemical vapor deposition Proceedings of Spie - the International Society For Optical Engineering. 9002. DOI: 10.1117/12.2036835 |
0.456 |
|
| 2014 |
Satter MM, Lochner Z, Kao TT, Liu YS, Li XH, Shen SC, Dupuis RD, Yoder PD. AlGaN-based vertical injection laser diodes using inverse tapered p-waveguide for efficient hole transport Ieee Journal of Quantum Electronics. 50: 166-173. DOI: 10.1109/Jqe.2014.2300757 |
0.449 |
|
| 2014 |
Li XH, Detchprohm T, Kao TT, Satter MM, Shen SC, Douglas Yoder P, Dupuis RD, Wang S, Wei YO, Xie H, Fischer AM, Ponce FA, Wernicke T, Reich C, Martens M, et al. Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates Applied Physics Letters. 105. DOI: 10.1063/1.4897527 |
0.48 |
|
| 2014 |
Kim J, Ji MH, Yuan D, Guo R, Liu J, Asadirad M, Detchprohm T, Kwon MK, Dupuis RD, Das S, Ryou JH. Direct periodic patterning of GaN-based light-emitting diodes by three-beam interference laser ablation Applied Physics Letters. 104. DOI: 10.1063/1.4871089 |
0.585 |
|
| 2014 |
Sidler M, Rauter P, Blanchard R, Métivier P, Mansuripur TS, Wang C, Huang Y, Ryou JH, Dupuis RD, Faist J, Capasso F. Mode switching in a multi-wavelength distributed feedback quantum cascade laser using an external micro-cavity Applied Physics Letters. 104. DOI: 10.1063/1.4863663 |
0.55 |
|
| 2014 |
Jo B, Lee CR, Kim JS, Han WS, Song JH, Leem JY, Noh SK, Ryou JH, Dupuis RD. Investigation on the lasing characteristics of InAs/InGaAsP quantum dots with additional confinement structures Journal of Crystal Growth. 393: 59-63. DOI: 10.1016/J.Jcrysgro.2013.11.038 |
0.628 |
|
| 2014 |
Satter MM, Liu YS, Kao TT, Lochner Z, Li X, Ryou JH, Shen SC, Detchprohm T, Dupuis RD, Yoder PD. Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-nitride devices for high-power opto- and microelectronic applications Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 828-831. DOI: 10.1002/Pssc.201300679 |
0.605 |
|
| 2014 |
Liu YS, Lochner Z, Kao TT, Satter MM, Li XH, Ryou JH, Shen SC, Yoder PD, Detchprohm T, Dupuis RD, Wei Y, Xie H, Fischer A, Ponce F. Optically pumped AlGaN quantum-well lasers at sub-250 nm grown by MOCVD on AlN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 258-260. DOI: 10.1002/Pssc.201300213 |
0.628 |
|
| 2014 |
Kao TT, Kim J, Lee YC, Ji MH, Detchprohm T, Dupuis RD, Shen SC. Homojunction GaN p-i-n rectifiers with ultra-low-on-state resistance Cs Mantech 2014 - 2014 International Conference On Compound Semiconductor Manufacturing Technology. 157-160. |
0.324 |
|
| 2013 |
Kim S, Kim HJ, Choi S, Lochner Z, Ryou JH, Dupuis RD, Ahn KS, Kim H. Electrical characteristics of Ti/Al contacts on AlInN:Mg/GaN heterostructures Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.10Ma07 |
0.562 |
|
| 2013 |
Kim S, Kim HJ, Choi S, Ryou JH, Dupuis RD, Ahn KS, Kim H. Electrical characteristics of Pt Schottky contacts on AlInN:Mg/GaN heterostructures Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.10Ma05 |
0.578 |
|
| 2013 |
Dupuis RD, Kim J, Lee YC, Lochner Z, Ji MH, Kao TT, Ryou JH, Detchphrom T, Shen SC. III-N high-power bipolar transistors Ecs Transactions. 58: 261-267. DOI: 10.1149/05804.0261ecst |
0.56 |
|
| 2013 |
Sood AK, Richwine RA, Welser RE, Puri YR, Dupuis RD, Ji MH, Kim J, Detchprohm T, Dhar NK, Peters RL. Development of III-N UVAPDs for ultraviolet sensor applications Proceedings of Spie - the International Society For Optical Engineering. 8868. DOI: 10.1117/12.2032207 |
0.329 |
|
| 2013 |
Lochner Z, Kao TT, Liu YS, Li XH, Satter MM, Shen SC, Yoder PD, Ryou JH, Dupuis RD, Wei Y, Xie H, Fischer A, Ponce FA. Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition Proceedings of Spie - the International Society For Optical Engineering. 8625. DOI: 10.1117/12.2008830 |
0.629 |
|
| 2013 |
Dupuis RD, Kim J, Kao TT, Lee YC, Lochner Z, Ji MH, Ryou JH, Detchphrom T, Shen SC. Bipolar III-N high-power electronic devices 1st Ieee Workshop On Wide Bandgap Power Devices and Applications, Wipda 2013 - Proceedings. 96-99. DOI: 10.1109/WiPDA.2013.6695571 |
0.583 |
|
| 2013 |
Kim J, Ji MH, Lochner Z, Choi S, Sebkhi N, Liu J, Satter MM, Kim JS, Yoder PD, Dupuis RD, Juday R, Fischer AM, Ponce FA, Ryou JH. Improved hole transport by p-InxGa1-xN Layer in Multiple Quantum Wells of Visible LEDs Ieee Photonics Technology Letters. 25: 1789-1792. DOI: 10.1109/Lpt.2013.2275791 |
0.607 |
|
| 2013 |
Satter MM, Lochner Z, Ryou JH, Shen SC, Dupuis RD, Yoder PD. AlGaN-based lateral current injection laser diodes using regrown ohmic contacts Ieee Photonics Technology Letters. 25: 313-316. DOI: 10.1109/Lpt.2012.2235826 |
0.609 |
|
| 2013 |
Dupuis RD. III-V semiconductor quantum-well devices grown by metalorganic chemical vapor deposition Proceedings of the Ieee. 101: 2188-2199. DOI: 10.1109/JPROC.2013.2274919 |
0.347 |
|
| 2013 |
Shen SC, Dupuis RD, Lochner Z, Lee YC, Kao TT, Zhang Y, Kim HJ, Ryou JH. Working toward high-power GaN/InGaN heterojunction bipolar transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074025 |
0.621 |
|
| 2013 |
Kao TT, Liu YS, Mahbub Satter M, Li XH, Lochner Z, Douglas Yoder P, Detchprohm T, Dupuis RD, Shen SC, Ryou JH, Fischer AM, Wei Y, Xie H, Ponce FA. Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors Applied Physics Letters. 103. DOI: 10.1063/1.4829477 |
0.617 |
|
| 2013 |
Juday R, Fischer AM, Huang Y, Huang JY, Kim HJ, Ryou JH, Dupuis RD, Bour DP, Ponce FA. Hydrogen-related, deeply bound excitons in Mg-doped GaN films Applied Physics Letters. 103. DOI: 10.1063/1.4819029 |
0.551 |
|
| 2013 |
Lochner Z, Kao TT, Liu YS, Li XH, Mahbub Satter M, Shen SC, Douglas Yoder P, Ryou JH, Dupuis RD, Wei Y, Xie H, Fischer A, Ponce FA. Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate Applied Physics Letters. 102. DOI: 10.1063/1.4795719 |
0.649 |
|
| 2013 |
Kim S, Ryou JH, Dupuis RD, Kim H. Carrier transport mechanism of low resistance Ti/Al/Au ohmic contacts to AlInN/GaN heterostructures Applied Physics Letters. 102. DOI: 10.1063/1.4790384 |
0.567 |
|
| 2013 |
Li T, Wei QY, Fischer AM, Huang JY, Huang YU, Ponce FA, Liu JP, Lochner Z, Ryou JH, Dupuis RD. The effect of InGaN underlayers on the electronic and optical properties of InGaN/GaN quantum wells Applied Physics Letters. 102. DOI: 10.1063/1.4789758 |
0.591 |
|
| 2013 |
Choi S, Jin Kim H, Lochner Z, Kim J, Dupuis RD, Fischer AM, Juday R, Huang Y, Li T, Huang JY, Ponce FA, Ryou JH. Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth, part I: Growth of AlInN on AlN and effects of prior coating Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2013.10.006 |
0.584 |
|
| 2013 |
Kim J, Lochner Z, Ji MH, Choi S, Kim HJ, Kim JS, Dupuis RD, Fischer AM, Juday R, Huang Y, Li T, Huang JY, Ponce FA, Ryou JH. Origins of unintentional incorporation of gallium in InAlN layers during epitaxial growth, part II: Effects of underlying layers and growth chamber conditions Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2013.09.046 |
0.577 |
|
| 2013 |
Choi S, Kim HJ, Lochner Z, Kim J, Dupuis RD, Fischer AM, Juday R, Huang Y, Li T, Huang JY, Ponce FA, Ryou J. WITHDRAWN: Origins of unintentional incorporation of gallium in AlInN layers during epitaxial growth Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2013.03.029 |
0.572 |
|
| 2013 |
Hwang J, Lee K, Kim JS, Lee CR, Lee IH, Lee JH, Leem JY, Ryou JH, Dupuis RD. Manipulation on the optical properties of InGaN/GaN light emitting diodes by adopting InN layer Journal of Crystal Growth. 370: 109-113. DOI: 10.1016/J.Jcrysgro.2012.08.049 |
0.642 |
|
| 2013 |
Lochner Z, Li XH, Kao TT, Satter MM, Kim HJ, Shen SC, Yoder PD, Ryou JH, Dupuis RD, Sun K, Wei Y, Li T, Fischer A, Ponce FA. Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate Physica Status Solidi (a) Applications and Materials Science. 210: 1768-1770. DOI: 10.1002/Pssa.201329013 |
0.642 |
|
| 2012 |
Mansuripur TS, Menzel S, Blanchard R, Diehl L, Pflügl C, Huang Y, Ryou JH, Dupuis RD, Loncar M, Capasso F. Widely tunable mid-infrared quantum cascade lasers using sampled grating reflectors. Optics Express. 20: 23339-48. PMID 23188297 DOI: 10.1364/Oe.20.023339 |
0.576 |
|
| 2012 |
Sood AK, Welser RE, Richwine RA, Puri YR, Dupuis RD, Ryou JH, Dhar NK, Suvarna P, Shahedipour-Sandvik F. Development of small unit cell avalanche photodiodes for UV imaging applications Proceedings of Spie - the International Society For Optical Engineering. 8375. DOI: 10.1117/12.923182 |
0.534 |
|
| 2012 |
Huang Y, Melton A, Jampana B, Jamil M, Ryou JH, Dupuis RD, Ferguson IT. Growth and characterization of InxGa1-xN alloys by metalorganic chemical vapor deposition for solar cell applications Journal of Photonics For Energy. 2. DOI: 10.1117/1.Jpe.2.028501 |
0.591 |
|
| 2012 |
Satter MM, Kim HJ, Lochner Z, Ryou JH, Shen SC, Dupuis RD, Yoder PD. Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers Ieee Journal of Quantum Electronics. 48: 703-711. DOI: 10.1109/Jqe.2012.2190496 |
0.594 |
|
| 2012 |
Satter MM, Lochner Z, Ryou JH, Shen SC, Dupuis RD, Yoder PD. Polarization matching in algan-based multiple-quantum-well deep ultraviolet laser diodes on aln substrates using quaternary AlInGaN barriers Journal of Lightwave Technology. 30: 3017-3025. DOI: 10.1109/Jlt.2012.2210998 |
0.608 |
|
| 2012 |
Choi S, Ji MH, Kim J, Jin Kim H, Satter MM, Yoder PD, Ryou JH, Dupuis RD, Fischer AM, Ponce FA. Efficiency droop due to electron spill-over and limited hole injection in III-nitride visible light-emitting diodes employing lattice-matched InAlN electron blocking layers Applied Physics Letters. 101. DOI: 10.1063/1.4759044 |
0.598 |
|
| 2012 |
Abid M, Moudakir T, Orsal G, Gautier S, En Naciri A, Djebbour Z, Ryou JH, Patriarche G, Largeau L, Kim HJ, Lochner Z, Pantzas K, Alamarguy D, Jomard F, Dupuis RD, et al. Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications Applied Physics Letters. 100. DOI: 10.1063/1.3679703 |
0.577 |
|
| 2012 |
Blanchard R, Grezes C, Menzel S, Pflügl C, Diehl L, Huang Y, Ryou JH, Dupuis RD, Capasso F. Double-waveguide quantum cascade laser Applied Physics Letters. 100. DOI: 10.1063/1.3678033 |
0.627 |
|
| 2012 |
Kim S, Kim HJ, Choi S, Lochner Z, Ryou JH, Dupuis RD, Kim H. Carrier transport properties of Mg-doped InAlN films Electronics Letters. 48: 1306-1308. DOI: 10.1049/El.2012.2238 |
0.547 |
|
| 2012 |
Lee YC, Zhang Y, Lochner ZM, Kim HJ, Ryou JH, Dupuis RD, Shen SC. GaN/InGaN heterojunction bipolar transistors with ultra-high d.c. power density (>3MW/cm 2) Physica Status Solidi (a) Applications and Materials Science. 209: 497-500. DOI: 10.1002/Pssa.201100436 |
0.596 |
|
| 2012 |
Blanchard R, Grezes C, Menzel S, Pflügl C, Diehl L, Huang Y, Ryou JH, Dupuis RD, Capasso F. Vertical monolithic integration of quantum cascade lasers for high-power broadband applications 2012 Conference On Lasers and Electro-Optics, Cleo 2012. |
0.506 |
|
| 2011 |
Zhang Y, Hamsen C, Choy JT, Huang Y, Ryou JH, Dupuis RD, Loncar M. Photonic crystal disk lasers. Optics Letters. 36: 2704-6. PMID 21765515 DOI: 10.1364/Ol.36.002704 |
0.547 |
|
| 2011 |
Ryou JH, Dupuis RD. Focus issue: Optics in LEDs for lighting. Optics Express. 19: A897-9. PMID 21747559 DOI: 10.1364/Oe.19.00A897 |
0.483 |
|
| 2011 |
Dupuis RD, Shen SC, Lochner ZM, Kim HJ, Lee YC, Zhang Y, Wang CY, Ryou JH. III-nitride heterojunction field-effect transistors and heterojunction bipolar transistors for next-generation power electronics Ecs Transactions. 41: 73-85. DOI: 10.1149/1.3631487 |
0.511 |
|
| 2011 |
Zhang Y, Liu JP, Kao TT, Kim S, Lee YC, Lochner Z, Ryou JH, Yoder PD, Dupuis RD, Shen SC. Performance enhancement of InGaN-based laser diodes using a step-graded Al xGa 1-xN electron blocking layer International Journal of High Speed Electronics and Systems. 20: 515-520. DOI: 10.1142/S0129156411006805 |
0.606 |
|
| 2011 |
Sood AK, Richwine RA, Egerton EJ, Puri YR, Dupuis RD, Dhar NK, Balcerak RS. Avalanche photodiodes for high-resolution UV imaging applications Proceedings of Spie - the International Society For Optical Engineering. 8155. DOI: 10.1117/12.895288 |
0.326 |
|
| 2011 |
Shen SC, Dupuis RD, Lee YC, Kim HJ, Zhang Y, Lochner Z, Yoder PD, Ryou JH. GaN/InGaN heterojunction bipolar transistors with fT} >5GHz Ieee Electron Device Letters. 32: 1065-1067. DOI: 10.1109/Led.2011.2156378 |
0.596 |
|
| 2011 |
Huang Y, Ryou JH, Dupuis RD. Epitaxial structure design of a long-wavelength InAlGaAs/InP transistor laser Ieee Journal of Quantum Electronics. 47: 642-650. DOI: 10.1109/Jqe.2011.2108636 |
0.632 |
|
| 2011 |
Blanchard R, Menzel S, Pflügl C, Diehl L, Wang C, Huang Y, Ryou JH, Dupuis RD, Dal Negro L, Capasso F. Gratings with an aperiodic basis: Single-mode emission in multi-wavelength lasers New Journal of Physics. 13. DOI: 10.1088/1367-2630/13/11/113023 |
0.537 |
|
| 2011 |
Steenbergen EH, Huang Y, Ryou JH, Dupuis RD, Nunna K, Huffaker DL, Zhang YH. Optical properties of strain-balanced InAs/InAs 1-xSb x type-II superlattices Aip Conference Proceedings. 1416: 122-125. DOI: 10.1063/1.3671713 |
0.502 |
|
| 2011 |
Lochner Z, Jin Kim H, Lee YC, Zhang Y, Choi S, Shen SC, Doug Yoder P, Ryou JH, Dupuis RD. NpN-GaN/InxGa1-xN/GaN heterojunction bipolar transistor on free-standing GaN substrate Applied Physics Letters. 99. DOI: 10.1063/1.3659475 |
0.654 |
|
| 2011 |
Huang Y, Ryou JH, Dupuis RD, Dixon F, Feng M, Holonyak N, Kuciauskas D. Doping-dependent device functionality of InP/InAlGaAs long-wavelength light-emitting transistors Applied Physics Letters. 99. DOI: 10.1063/1.3633345 |
0.632 |
|
| 2011 |
Huang Y, Melton A, Jampana B, Jamil M, Ryou JH, Dupuis RD, Ferguson IT. Compositional instability in strained InGaN epitaxial layers induced by kinetic effects Journal of Applied Physics. 110. DOI: 10.1063/1.3626434 |
0.585 |
|
| 2011 |
Steenbergen EH, Huang Y, Ryou JH, Ouyang L, Li JJ, Smith DJ, Dupuis RD, Zhang YH. Structural and optical characterization of type-II InAs/InAs 1-xSbx superlattices grown by metalorganic chemical vapor deposition Applied Physics Letters. 99. DOI: 10.1063/1.3625429 |
0.61 |
|
| 2011 |
Huang Y, Ryou JH, Dupuis RD, Zuo D, Kesler B, Chuang SL, Hu H, Kim KH, Ting Lu Y, Hsieh KC, Zuo JM. Strain-balanced InAs/GaSb type-II superlattice structures and photodiodes grown on InAs substrates by metalorganic chemical vapor deposition Applied Physics Letters. 99. DOI: 10.1063/1.3609240 |
0.624 |
|
| 2011 |
Zhang Y, Kao TT, Liu J, Lochner Z, Kim SS, Ryou JH, Dupuis RD, Shen SC. Effects of a step-graded AlxGa1-xN electron blocking layer in InGaN-based laser diodes Journal of Applied Physics. 109. DOI: 10.1063/1.3581080 |
0.653 |
|
| 2011 |
Kim H, Kim KK, Lee SN, Ryou JH, Dupuis RD. Low resistance Ti/Au contacts to amorphous gallium indium zinc oxides Applied Physics Letters. 98. DOI: 10.1063/1.3567796 |
0.568 |
|
| 2011 |
Huang Y, Ryou JH, Dupuis RD, Dixon F, Feng M, Holonyak N. InP/InAlGaAs light-emitting transistors and transistor lasers with a carbon-doped base layer Journal of Applied Physics. 109. DOI: 10.1063/1.3561368 |
0.654 |
|
| 2011 |
Huang Y, Ryou JH, Dupuis RD. Incorporation of indium and gallium in atomic layer epitaxy of InGaAs on InP substrates Journal of Crystal Growth. 321: 60-64. DOI: 10.1016/J.Jcrysgro.2011.02.039 |
0.589 |
|
| 2011 |
Huang Y, Ryou JH, Dupuis RD, Pflgl C, Capasso F, Sun K, Fischer AM, Ponce FA. Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition Journal of Crystal Growth. 316: 75-80. DOI: 10.1016/J.Jcrysgro.2010.12.028 |
0.656 |
|
| 2011 |
Huang Y, Ryou JH, Dupuis RD, D'costa VR, Steenbergen EH, Fan J, Zhang YH, Petschke A, Mandl M, Chuang SL. Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors Journal of Crystal Growth. 314: 92-96. DOI: 10.1016/J.Jcrysgro.2010.11.003 |
0.576 |
|
| 2011 |
Liu J, Zhang Y, Lochner Z, Kim SS, Kim H, Ryou JH, Shen SC, Doug Yoder P, Dupuis RD, Wei QY, Sun KW, Fischer AM, Ponce FA. Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition Journal of Crystal Growth. 315: 272-277. DOI: 10.1016/J.Jcrysgro.2010.09.071 |
0.644 |
|
| 2011 |
Lochner Z, Jin Kim H, Choi S, Lee YC, Zhang Y, Shen SC, Ryou JH, Dupuis RD. Growth and characterization of NpN heterojunction bipolar transistors with In0.03Ga0.97N and In0.05Ga0.95N bases Journal of Crystal Growth. 315: 278-282. DOI: 10.1016/J.Jcrysgro.2010.08.034 |
0.616 |
|
| 2011 |
Yoder PD, Sridharan S, Graham S, Shen SC, Ryou JH, Dupuis RD. Traveling dipole domains in AlGaN/GaN heterostructures and the direct generation of millimeter-wave oscillations Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2285-2287. DOI: 10.1002/Pssc.201001143 |
0.549 |
|
| 2011 |
Zhang Y, Lee YC, Lochner Z, Kim HJ, Choi S, Ryou JH, Dupuis RD, Shen SC. High-performance GaN/InGaN double heterojunction bipolar transistors with power density >240 kW/cm2 Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2451-2453. DOI: 10.1002/Pssc.201001098 |
0.598 |
|
| 2011 |
Zhang Y, Lee YC, Lochner Z, Kim HJ, Ryou JH, Dupuis RD, Shen SC. GaN/InGaN heterojunction bipolar transistors with collector current density > 20 kA/cm2 2011 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2011. |
0.551 |
|
| 2011 |
Abid M, Moudakir T, Gautier S, Orsal G, En Naciri A, Djebbour Z, Ryou JH, Patriarche G, Kim HJ, Lochner Z, Pantzas K, Alamarguy D, Jomard F, Dupuis RD, Ougazzaden A. New generation of distributed bragg reflectors based on BAlN/AlN structures for deep UV-optoelectronic applications Optics Infobase Conference Papers. |
0.497 |
|
| 2010 |
Xu S, Xu C, Liu Y, Hu Y, Yang R, Yang Q, Ryou JH, Kim HJ, Lochner Z, Choi S, Dupuis R, Wang ZL. Ordered nanowire array blue/near-UV light emitting diodes. Advanced Materials (Deerfield Beach, Fla.). 22: 4749-53. PMID 20862713 DOI: 10.1002/Adma.201002134 |
0.617 |
|
| 2010 |
Fischer AM, Sun KW, Juday R, Ponce FA, Ryou JH, Kim HJ, Choi S, Kim SS, Dupuis RD. Effect of growth temperature on the electron-blocking performance of InAlN layers in green emitting diodes Applied Physics Express. 3. DOI: 10.1143/Apex.3.031003 |
0.645 |
|
| 2010 |
Sood AK, Richwine RA, Puri YR, Dupuis RD, Ryou JH, Dhar NK, Balcerak RS. Development of GaN/AlGaN APD's for UV imaging applications Proceedings of Spie - the International Society For Optical Engineering. 7780. DOI: 10.1117/12.866361 |
0.541 |
|
| 2010 |
Liu J, Zhang Y, Lochner Z, Kim SS, Kim H, Ryou JH, Shen SC, Yoder PD, Dupuis RD, Wei Q, Sun K, Fischer A, Ponce F. Performance improvement of InGaN-based laser diodes by epitaxial layer structure design Proceedings of Spie - the International Society For Optical Engineering. 7602. DOI: 10.1117/12.842334 |
0.573 |
|
| 2010 |
Lee YC, Zhang Y, Kim HJ, Choi S, Lochner Z, Dupuis RD, Ryou JH, Shen SC. High-current-gain direct-growth GaN/InGaN double heterojunction bipolar transistors Ieee Transactions On Electron Devices. 57: 2964-2969. DOI: 10.1109/Ted.2010.2064316 |
0.629 |
|
| 2010 |
Venkatachalam A, Klein B, Ryou JH, Shen SC, Dupuis RD, Yoder PD. Design strategies for InGaN-based green lasers Ieee Journal of Quantum Electronics. 46: 238-245. DOI: 10.1109/Jqe.2009.2029348 |
0.588 |
|
| 2010 |
Barkad HA, Soltani A, Mattalah M, Gerbedoen JC, Rousseau M, De Jaeger JC, BenMoussa A, Mortet V, Haenen K, Benbakhti B, Moreau M, Dupuis R, Ougazzaden A. Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes Journal of Physics D: Applied Physics. 43. DOI: 10.1088/0022-3727/43/46/465104 |
0.398 |
|
| 2010 |
Zhang Y, Khan M, Huang Y, Ryou J, Deotare P, Dupuis R, Lončar M. Photonic crystal nanobeam lasers Applied Physics Letters. 97: 051104. DOI: 10.1063/1.3475397 |
0.52 |
|
| 2010 |
Huang Y, Ryou JH, Dupuis RD, Petschke A, Mandl M, Chuang SL. InAs/GaSb type-II superlattice structures and photodiodes grown by metalorganic chemical vapor deposition Applied Physics Letters. 96. DOI: 10.1063/1.3456386 |
0.612 |
|
| 2010 |
Choi S, Kim HJ, Lochner Z, Zhang Y, Lee YC, Shen SC, Ryou JH, Dupuis RD. Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operation Applied Physics Letters. 96. DOI: 10.1063/1.3446891 |
0.602 |
|
| 2010 |
Choi S, Kim HJ, Kim SS, Liu J, Kim J, Ryou JH, Dupuis RD, Fischer AM, Ponce FA. Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer Applied Physics Letters. 96. DOI: 10.1063/1.3441373 |
0.611 |
|
| 2010 |
Kim HJ, Choi S, Kim SS, Ryou JH, Yoder PD, Dupuis RD, Fischer AM, Sun K, Ponce FA. Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes Applied Physics Letters. 96. DOI: 10.1063/1.3353995 |
0.636 |
|
| 2010 |
Petschke A, Mandl M, Chuang SL, Huang Y, Ryou JH, Dupuis RD. Metal-organic chemical vapour deposition growth of InAs/GaSb type-II superlattice photodiodes Electronics Letters. 46: 1151-1152. DOI: 10.1049/El.2010.1308 |
0.571 |
|
| 2010 |
Kim HJ, Choi S, Yoo D, Ryou JH, Hawkridge ME, Liliental-Weber Z, Dupuis RD. Digitally alloyed modulated precursor flow epitaxial growth of ternary algan with binary AIN and GaN sub-layers and observation of compositional inhomogeneity Journal of Electronic Materials. 39: 466-472. DOI: 10.1007/S11664-010-1098-3 |
0.595 |
|
| 2010 |
Lee YC, Kim HJ, Zhang Y, Choi S, Dupuis RD, Ryou JH, Shen SC. High-performance GaN/InGaN heterojunction bipolar transistors using a direct-growth approach Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 1970-1973. DOI: 10.1002/Pssc.200983555 |
0.592 |
|
| 2010 |
Lee YC, Kim HJ, Zhang Y, Choi S, Dupuis RD, Ryou JH, Shen SC. Study on the base recombination current in direct-growth npn GaN/InGaN DHBTs 2010 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2010. |
0.583 |
|
| 2009 |
Choi S, Kim HJ, Zhang Y, Bai X, Yoo D, Limb J, Ryou JH, Shen SC, Yoder PD, Dupuis RD. Geiger-mode operation of GaN avalanche photodiodes grown on GaN substrates Ieee Photonics Technology Letters. 21: 1526-1528. DOI: 10.1109/Lpt.2009.2029073 |
0.608 |
|
| 2009 |
Shen SC, Lee YC, Kim HJ, Zhang Y, Choi S, Dupuis RD, Ryou JH. Surface leakage in GaN/InGaN double heterojunction bipolar transistors Ieee Electron Device Letters. 30: 1119-1121. DOI: 10.1109/Led.2009.2030373 |
0.605 |
|
| 2009 |
Kim H, Ryou JH, Dupuis RD, Jang T, Park Y, Lee SN, Seong TY. Electrical characteristics of metal contacts to laser-irradiated N-polar n-type GaN Ieee Electron Device Letters. 30: 319-321. DOI: 10.1109/Led.2009.2013486 |
0.579 |
|
| 2009 |
Ryou JH, Yoder PD, Liu J, Lochner Z, Kim HS, Choi S, Kim HJ, Dupuis RD. Control of quantum-confined stark effect in InGaN-based quantum wells Ieee Journal On Selected Topics in Quantum Electronics. 15: 1080-1091. DOI: 10.1109/Jstqe.2009.2014170 |
0.574 |
|
| 2009 |
Choi S, Kim HJ, Ryou JH, Dupuis RD. Actual temperatures of growing surfaces of III-nitride-based materials depending on substrates and forced convection conditions in metal organic chemical vapor deposition Journal of Applied Physics. 106. DOI: 10.1063/1.3238488 |
0.579 |
|
| 2009 |
Yi W, Narayanamurti V, Lu H, Scarpulla MA, Gossard AC, Huang Y, Ryou JH, Dupuis RD. Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy Applied Physics Letters. 95. DOI: 10.1063/1.3224914 |
0.378 |
|
| 2009 |
Lee JW, Sone C, Park Y, Lee SN, Ryou JH, Dupuis RD, Hong CH, Kim H. High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures Applied Physics Letters. 95. DOI: 10.1063/1.3166868 |
0.336 |
|
| 2009 |
Zhang Y, Shen SC, Kim HJ, Choi S, Ryou JH, Dupuis RD, Narayan B. Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates Applied Physics Letters. 94. DOI: 10.1063/1.3148812 |
0.586 |
|
| 2009 |
Hawkridge ME, Liliental-Weber Z, Kim HJ, Choi S, Yoo D, Ryou JH, Dupuis RD. Erratic dislocations within funnel defects in AlN templates for AlGaN epitaxial layer growth Applied Physics Letters. 94. DOI: 10.1063/1.3129870 |
0.511 |
|
| 2009 |
Hawkridge ME, Liliental-Weber Z, Kim HJ, Choi S, Yoo D, Ryou JH, Dupuis RD. The structural quality of AlxGa1-xN epitaxial layers grown by digitally alloyed modulated precursor epitaxy determined by transmission electron microscopy Applied Physics Letters. 94. DOI: 10.1063/1.3086280 |
0.599 |
|
| 2009 |
Choi S, Kim HJ, Ryou JH, Dupuis RD. Digitally alloyed modulated precursor flow epitaxial growth of AlxGa1-xN layers with AlN and AlyGa1-yN monolayers Journal of Crystal Growth. 311: 3252-3256. DOI: 10.1016/J.Jcrysgro.2009.03.041 |
0.589 |
|
| 2009 |
Sridharan S, Yoder PD, Shen SC, Ryou JH, Dupuis RD. Geiger mode simulation of GaN homojunction avalanche photodetectors Physica Status Solidi (C) Current Topics in Solid State Physics. 6. DOI: 10.1002/Pssc.200880903 |
0.34 |
|
| 2009 |
Allerman A, Dupuis RD, Khan A, Ponce FA. Physica Status Solidi (A) Applications and Materials: Preface Physica Status Solidi (a) Applications and Materials Science. 206: 193-194. DOI: 10.1002/Pssa.200880416 |
0.377 |
|
| 2009 |
Liu JP, Limb J, Lochner Z, Yoo D, Ryou JH, Dupuis RD. Green light-emitting diodes with p-InGaN:Mg grown on c-plane sapphire and GaN substrates Physica Status Solidi (a) Applications and Materials Science. 206: 750-753. DOI: 10.1002/Pssa.200824366 |
0.624 |
|
| 2008 |
Dupuis RD, Dongwon Y, Ryou JH, Yun Z, Shen SC, Limb J, Yoder PD, Hanser AD, Preble E, Evans K. Growth and characterization of high-performance GaN and Al xGa1-xN ultraviolet avalanche photodiodes grown on GaN substrates Materials Research Society Symposium Proceedings. 1040: 13-18. DOI: 10.1557/Proc-1040-Q03-03 |
0.657 |
|
| 2008 |
Dupuis RD, Limb JB, Liu J, Ryou JH, Horne C, Yoo D. InGaN MQW green LEDs using p-InGaN and p-InGaN/p-GaN superlattices as p-type layers Proceedings of Spie - the International Society For Optical Engineering. 6894. DOI: 10.1117/12.766915 |
0.471 |
|
| 2008 |
Ryou JH, Limb J, Lee W, Liu J, Lochner Z, Yoo D, Dupuis RD. Effect of silicon doping in the quantum-well barriers on the electrical and optical properties of visible green light-emitting diodes Ieee Photonics Technology Letters. 20: 1769-1771. DOI: 10.1109/Lpt.2008.2004686 |
0.611 |
|
| 2008 |
Kim H, Ryou JH, Dupuis RD, Lee SN, Park Y, Jeon JW, Seong TY. Electrical characteristics of contacts to thin film N-polar n-type GaN Applied Physics Letters. 93. DOI: 10.1063/1.3013838 |
0.587 |
|
| 2008 |
Ougazzaden A, Gautier S, Moudakir T, Djebbour Z, Lochner Z, Choi S, Kim HJ, Ryou JH, Dupuis RD, Sirenko AA. Bandgap bowing in BGaN thin films Applied Physics Letters. 93. DOI: 10.1063/1.2977588 |
0.36 |
|
| 2008 |
Kim HJ, Choi S, Yoo D, Ryou JH, Dupuis RD, Dalmau RF, Lu P, Sitar Z. Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition Applied Physics Letters. 93. DOI: 10.1063/1.2959064 |
0.6 |
|
| 2008 |
Dixon F, Feng M, Holonyak N, Huang Y, Zhang XB, Ryou JH, Dupuis RD. Transistor laser with emission wavelength at 1544 nm Applied Physics Letters. 93. DOI: 10.1063/1.2958228 |
0.598 |
|
| 2008 |
Liu JP, Ryou JH, Dupuis RD, Han J, Shen GD, Wang HB. Barrier effect on hole transport and carrier distribution in InGaNGaN multiple quantum well visible light-emitting diodes Applied Physics Letters. 93. DOI: 10.1063/1.2957667 |
0.624 |
|
| 2008 |
Huang Y, Zhang XB, Ryou JH, Dupuis RD, Dixon F, Holonyak N, Feng M. InAlGaAsInP light-emitting transistors operating near 1.55 μm Journal of Applied Physics. 103. DOI: 10.1063/1.2939243 |
0.63 |
|
| 2008 |
Liu JP, Ryou JH, Yoo D, Zhang Y, Limb J, Horne CA, Shen SC, Dupuis RD, Hanser AD, Preble EA, Evans KR. III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge Applied Physics Letters. 92. DOI: 10.1063/1.2906372 |
0.577 |
|
| 2008 |
Ryou JH, Lee W, Limb J, Yoo D, Liu JP, Dupuis RD, Wu ZH, Fischer AM, Ponce FA. Control of quantum-confined Stark effect in InGaNGaN multiple quantum well active region by p -type layer for III-nitride-based visible light emitting diodes Applied Physics Letters. 92. DOI: 10.1063/1.2894514 |
0.442 |
|
| 2008 |
Liu JP, Limb JB, Ryou JH, Yoo D, Horne CA, Dupuis RD, Wu ZH, Fischer AM, Ponce FA, Hanser AD, Liu L, Preble EA, Evans KR. Blue light emitting diodes grown on freestanding (11-20) a -plane GaN substrates Applied Physics Letters. 92. DOI: 10.1063/1.2832645 |
0.624 |
|
| 2008 |
Limb JB, Yoo D, Zhang Y, Ryou JH, Shen SC, Dupuis RD. GaN ultraviolet avalanche photodiodes grown on 6H-SiC substrates with SiN passivation Electronics Letters. 44: 313-315. DOI: 10.1049/El:20082830 |
0.629 |
|
| 2008 |
Wei Y, Ding Y, Li C, Xu S, Ryo J, Dupuis R, Sood AK, Polla DL, Wang ZL. Growth of Vertically Aligned ZnO Nanobelt Arrays on GaN Substrate The Journal of Physical Chemistry C. 112: 18935-18937. DOI: 10.1021/Jp807616Y |
0.354 |
|
| 2008 |
Dupuis RD, Ryou JH, Shen SC, Yoder PD, Zhang Y, Kim HJ, Choi S, Lochner Z. Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes Journal of Crystal Growth. 310: 5217-5222. DOI: 10.1016/J.Jcrysgro.2008.07.107 |
0.581 |
|
| 2008 |
Kim HJ, Choi S, Yoo D, Ryou JH, Dupuis RD. Modulated precursor flow epitaxial growth of ternary AlGaN by metalorganic chemical vapor deposition Journal of Crystal Growth. 310: 4880-4884. DOI: 10.1016/J.Jcrysgro.2008.07.081 |
0.596 |
|
| 2008 |
Huang Y, Ryou JH, Dupuis RD. Control of Zn diffusion in InP/InAlGaAs-based heterojunction bipolar transistors and light emitting transistors Journal of Crystal Growth. 310: 4345-4350. DOI: 10.1016/J.Jcrysgro.2008.07.034 |
0.615 |
|
| 2008 |
Liu J, Ryou JH, Lochner Z, Limb J, Yoo D, Dupuis RD, Wu Z, Fischer AM, Ponce FA. Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 310: 5166-5169. DOI: 10.1016/J.Jcrysgro.2008.07.033 |
0.602 |
|
| 2008 |
Liu JP, Limb JB, Ryou JH, Lee W, Yoo D, Horne CA, Dupuis RD. Characteristics of green light-emitting diodes using an InGaN:Mg/GaN:Mg superlattice as p-type hole injection and contact layers Journal of Electronic Materials. 37: 558-563. DOI: 10.1007/S11664-007-0355-6 |
0.426 |
|
| 2008 |
Zhang Y, Yoo D, Limb JB, Ryou JH, Dupuis RD, Shen SC. GaN ultraviolet avalanche photodiodes fabricated on free-standing bulk GaN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2290-2292. DOI: 10.1002/Pssc.200778704 |
0.647 |
|
| 2008 |
Ryou JH, Liu JP, Zhang Y, Horne CA, Lee W, Shen SC, Dupuis RD. Surface treatment on the growth surface of semi-insulating GaN bulk substrate for III-nitride heterostructure field-effect transistors Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 1849-1851. DOI: 10.1002/Pssc.200778698 |
0.596 |
|
| 2007 |
Shen SC, Zhang Y, Yoo D, Limb JB, Ryou JH, Dupuis RD, Britt M, Yoder PD. Performance evaluation of III-nitride avalanche photodiodes grown on SiC and GaN substrates Ecs Transactions. 11: 91-96. DOI: 10.1149/1.2783861 |
0.552 |
|
| 2007 |
Dupuis RD, Ryou JH, Yoo D, Limb JB, Zhang Y, Shen SC, Yoder D. High-performance GaN and AlxGa1-xN ultraviolet avalanche photodiodes grown by MOCVD on bulk III-N substrates Proceedings of Spie - the International Society For Optical Engineering. 6739. DOI: 10.1117/12.738505 |
0.619 |
|
| 2007 |
Shen SC, Zhang Y, Yoo D, Limb JB, Ryou JH, Yoder PD, Dupuis RD. Performance of deep ultraviolet gan avalanche photodiodes grown by MOCVD Ieee Photonics Technology Letters. 19: 1744-1746. DOI: 10.1109/Lpt.2007.906052 |
0.633 |
|
| 2007 |
Yoo D, Limb J, Ryou JH, Zhang Y, Shen SC, Dupuis RD, Hanser D, Preble E, Evans K. AlxGa1-xN ultraviolet avalanche photodiodes grown on GaN substrates Ieee Photonics Technology Letters. 19: 1313-1315. DOI: 10.1109/Lpt.2007.902376 |
0.667 |
|
| 2007 |
Lee W, Limb J, Ryou JH, Yoo D, Ewing MA, Korenblit Y, Dupuis RD. Nitride-based green light-emitting diodes with various p-type layers Ieee/Osa Journal of Display Technology. 3: 126-132. DOI: 10.1109/Jdt.2007.896719 |
0.641 |
|
| 2007 |
Chu-Kung BF, Wu CH, Walter G, Feng M, Holonyak N, Chung T, Ryou JH, Dupuis RD. Modulation of high current gain (Β49) light-emitting InGaNGaN heterojunction bipolar transistors Applied Physics Letters. 91. DOI: 10.1063/1.2821380 |
0.725 |
|
| 2007 |
Wu ZH, Fischer AM, Ponce FA, Lee W, Ryou JH, Limb J, Yoo D, Dupuis RD. Effect of internal electrostatic fields in InGaN quantum wells on the properties of green light emitting diodes Applied Physics Letters. 91. DOI: 10.1063/1.2760160 |
0.398 |
|
| 2007 |
Kim J, Kondratko PK, Chuang SL, Walter G, Holonyak N, Heller RD, Zhang XB, Dupuis RD. Experimental demonstration of the polarization-dependent photon-mediated carrier redistribution in tunneling injection InP quantum-dot lasers with external-grating feedback Applied Physics Letters. 90. DOI: 10.1063/1.2741118 |
0.744 |
|
| 2007 |
Zhang XB, Ryou JH, Dupuis RD, Xu C, Mou S, Petschke A, Hsieh KC, Chuang SL. Improved surface and structural properties of InAs/GaSb superlattices on (001) GaSb substrate by introducing an InAsSb layer at interfaces Applied Physics Letters. 90. DOI: 10.1063/1.2717524 |
0.584 |
|
| 2007 |
Lee W, Ryou JH, Yoo D, Limb J, Dupuis RD, Hanser D, Preble E, Williams NM, Evans K. Optimization of Fe doping at the regrowth interface of GaN for applications to III-nitride-based heterostructure field-effect transistors Applied Physics Letters. 90. DOI: 10.1063/1.2535899 |
0.592 |
|
| 2007 |
Wu ZH, Stevens M, Ponce FA, Lee W, Ryou JH, Yoo D, Dupuis RD. Mapping the electrostatic potential across AlGaN/AlN/GaN heterostructures using electron holography Applied Physics Letters. 90. DOI: 10.1063/1.2431716 |
0.324 |
|
| 2007 |
Seguin R, Guillet T, Taliercio T, Lefebvre P, Bretagnon T, Zhang XB, Ryou JH, Dupuis RD. Contribution of long lived metastable states to the PL of InP dots in indirect band-gap barrier layers Epj Applied Physics. 37: 15-18. DOI: 10.1051/epjap:2007006 |
0.332 |
|
| 2007 |
Limb JB, Yoo D, Ryou JH, Shen SC, Dupuis RD. Low on-resistance GaN pin rectifiers grown on 6H-SiC substrates Electronics Letters. 43: 366-367. DOI: 10.1049/El:20070065 |
0.637 |
|
| 2007 |
Chung T, Keogh DM, Ryou JH, Yoo D, Limb J, Lee W, Shen SC, Asbeck PM, Dupuis RD. High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition Journal of Crystal Growth. 298: 852-856. DOI: 10.1016/J.Jcrysgro.2006.10.231 |
0.467 |
|
| 2007 |
Limb JB, Lee W, Ryou JH, Yoo D, Dupuis RD. Comparison of GaN and In 0.04Ga 0.96N p-layers on the electrical and electroluminescence properties of green light emitting diodes Journal of Electronic Materials. 36: 426-430. DOI: 10.1007/S11664-006-0072-6 |
0.63 |
|
| 2007 |
Yoo D, Limb JB, Ryou JH, Lee W, Dupuis RD. Epitaxial growth and device design optimization of full-vertical GaN p-i-n rectifiers Journal of Electronic Materials. 36: 353-358. DOI: 10.1007/S11664-006-0069-1 |
0.64 |
|
| 2006 |
Wang X, Song J, Summers CJ, Ryou JH, Li P, Dupuis RD, Wang ZL. Density-controlled growth of aligned ZnO nanowires sharing a common contact: a simple, low-cost, and mask-free technique for large-scale applications. The Journal of Physical Chemistry. B. 110: 7720-4. PMID 16610866 DOI: 10.1021/Jp060346H |
0.593 |
|
| 2006 |
Reine MB, Hairston A, Lamarre P, Wong KK, Tobin SP, Sood AK, Cooke C, Pophristic M, Guo S, Peres B, Singh R, Eddy CR, Chowdhury U, Wong MM, Dupuis RD, et al. Solar-blind AlGaN 256×256 p-i-n detectors and focal plane arrays Proceedings of Spie - the International Society For Optical Engineering. 6119. DOI: 10.1117/12.653645 |
0.342 |
|
| 2006 |
Noh MS, Ryou JH, Dupuis RD, Chang YL, Weissman RH. Band lineup of pseudomorphic GaAs 1-xSb x quantum-well structures with GaAs, GaAsP, and InGaP barriers grown by metal organic chemical vapor deposition Journal of Applied Physics. 100. DOI: 10.1063/1.2363237 |
0.59 |
|
| 2006 |
Chu-Kung BF, Feng M, Walter G, Holonyak N, Chung T, Ryou JH, Limb J, Yoo D, Shen SC, Dupuis RD, Keogh D, Asbeck PM. Graded-base InGaN/GaN heterojunction bipolar light-emitting transistors Applied Physics Letters. 89. DOI: 10.1063/1.2336619 |
0.736 |
|
| 2006 |
Zhang XB, Heller RD, Ryou JH, Dupuis RD, Walter G, Holonyak N. Growth of InP self-assembled quantum dots on strained and strain-relaxed in x(Al 0.6Ga 0.4) 1-xP matrices by metal-organic chemical vapor deposition Journal of Applied Physics. 100. DOI: 10.1063/1.2244519 |
0.727 |
|
| 2006 |
Limb JB, Yoo D, Ryou JH, Lee W, Shen SC, Dupuis RD, Reed ML, Collins CJ, Wraback M, Hanser D, Preble E, Williams NM, Evans K. GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition Applied Physics Letters. 89. DOI: 10.1063/1.2219390 |
0.646 |
|
| 2006 |
Yoo D, Limb J, Ryou JH, Lee W, Dupuis RD. GaN full-vertical p-i-n rectifiers employing AlGaN:Si conducting buffer layers on n-SiC substrates Applied Physics Letters. 88. DOI: 10.1063/1.2201554 |
0.46 |
|
| 2006 |
Chung T, Limb J, Yoo D, Ryou JH, Lee W, Shen SC, Dupuis RD, Chu-Kung B, Feng M, Keogh DM, Asbeck PM. Device operation of InGaN heterojunction bipolar transistors with a graded emitter-base design Applied Physics Letters. 88. DOI: 10.1063/1.2198014 |
0.627 |
|
| 2006 |
Zhang XB, Ryou JH, Dupuis RD, Petschke A, Mou S, Chuang SL, Xu C, Hsieh KC. Metalorganic chemical vapor deposition growth of high-quality InAsGaSb type II superlattices on (001) GaAs substrates Applied Physics Letters. 88. DOI: 10.1063/1.2168668 |
0.446 |
|
| 2006 |
Dixon F, Chan R, Walter G, Holonyak N, Feng M, Zhang XB, Ryou JH, Dupuis RD. Visible spectrum light-emitting transistors Applied Physics Letters. 88. DOI: 10.1063/1.2158704 |
0.725 |
|
| 2006 |
Keogh DM, Asbeck PM, Chung T, Limb J, Yoo D, Ryou J-, Lee W, Shen S-, Dupuis RD. High current gain InGaN/GaN HBTs with 300/spl deg/C operating temperature Electronics Letters. 42: 661-663. DOI: 10.1049/Iel:20060333 |
0.389 |
|
| 2006 |
Limb JB, Yoo D, Ryou JH, Lee W, Shen SC, Dupuis RD. High performance GaN pin rectifiers grown on free-standing GaN substrates Electronics Letters. 42: 1313-1314. DOI: 10.1049/El:20062261 |
0.661 |
|
| 2006 |
Keogh DM, Asbeck PM, Chung T, Limb J, Yoo D, Ryou JH, Lee W, Shen SC, Dupuis RD. High current gain InGaN/GaN HBTs with 300°C operating temperature Electronics Letters. 42: 661-663. DOI: 10.1049/El:20060333 |
0.586 |
|
| 2006 |
Lee W, Limb J, Ryou JH, Yoo D, Chung T, Dupuis RD. Effect of thermal annealing induced by p-type layer growth on blue and green LED performance Journal of Crystal Growth. 287: 577-581. DOI: 10.1016/J.Jcrysgro.2005.10.079 |
0.643 |
|
| 2006 |
Zhang XB, Ryou JH, Dupuis RD, Mou S, Chuang SL, Xu C, Hsieh KC. Metal organic chemical vapor deposition of metaphorphic InAs-GaSb superlattices on (0 0 1) GaAs substrates for mid-IR photodetector applications Journal of Crystal Growth. 287: 545-549. DOI: 10.1016/J.Jcrysgro.2005.10.025 |
0.615 |
|
| 2006 |
Zhang XB, Ryou JH, Dupuis RD, Walter G, Holonyak N. Metalorganic chemical vapor deposition growth and characterization of InGaP/GaAs superlattices Journal of Electronic Materials. 35: 705-710. DOI: 10.1007/S11664-006-0125-X |
0.65 |
|
| 2006 |
Zhang XB, Ryou JH, Dupuis RD, He L, Hull R, Walter G, Holonyak N. Effect of thin strain-compensated Al 0.6Ga 0.4P layers on the growth of multiple-stacked InP/In 0.5Al 0.3Ga 0.2P quantum dots Journal of Electronic Materials. 35: 701-704. DOI: 10.1007/S11664-006-0124-Y |
0.651 |
|
| 2006 |
Chung T, Limb J, Ryou JH, Lee W, Li P, Yoo D, Zhang XB, Shen SC, Dupuis RD, Keogh D, Asbeck P, Chukung B, Feng M, Zakharov D, Lilienthal-Weber Z. Growth of InGaN HBTs by MOCVD Journal of Electronic Materials. 35: 695-700. DOI: 10.1007/S11664-006-0123-Z |
0.437 |
|
| 2006 |
Lee W, Limb J, Ryou JH, Yoo D, Chung T, Dupuis RD. Influence of growth temperature and growth rate of p-GaN layers on the characteristics of green light emitting diodes Journal of Electronic Materials. 35: 587-591. DOI: 10.1007/S11664-006-0104-2 |
0.645 |
|
| 2006 |
Chuang SL, Kim J, Kondratko PK, Walter G, Holonyak N, Heller RD, Zhang XB, Dupuis RD. Tunneling injection quantum-dot lasers Materials Research Society Symposium Proceedings. 891: 51-58. |
0.624 |
|
| 2005 |
Wang X, Song J, Li P, Ryou JH, Dupuis RD, Summers CJ, Wang ZL. Growth of uniformly aligned ZnO nanowire heterojunction arrays on GaN, AlN, and Al0.5Ga0.5N substrates. Journal of the American Chemical Society. 127: 7920-3. PMID 15913382 DOI: 10.1021/Ja050807X |
0.625 |
|
| 2005 |
Dupuis R, Chung T, Lee W, Li P, Limb J, Ryou J, Yoo D. III-N Epitaxial Growth for Nitride Devices Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff07-01-Ee05-01 |
0.616 |
|
| 2005 |
Chuang SL, Kim J, Kondratko PK, Walter G, Holonyak N, Heller RB, Zhang XB, Dupuis RD. Tunneling Injection Quantum-Dot Lasers Mrs Proceedings. 891. DOI: 10.1557/Proc-0891-Ee02-02 |
0.63 |
|
| 2005 |
Kondratko PK, Chuang SL, Walter G, Holonyak N, Heller RD, Zhang X, Dupuis RD. Gain narrowing and output behavior of InP-InGaAlP tunneling injection quantum-dot-well laser Ieee Photonics Technology Letters. 17: 938-940. DOI: 10.1109/Lpt.2005.844328 |
0.74 |
|
| 2005 |
Kim J, Kondratko PK, Chuang SL, Walter G, Holonyak N, Heller RD, Zhang XB, Dupuis RD. Tunneling injection quantum-dot lasers with polarization-dependent photon-mediated carrier redistribution and gain narrowing Ieee Journal of Quantum Electronics. 41: 1369-1379. DOI: 10.1109/Jqe.2005.857067 |
0.738 |
|
| 2005 |
Zhang XB, Ryou JH, Dupuis RD, Walter G, Holonyak N. Temperature-dependent luminescence of InP quantum dots coupled with an InGaP quantum well and of InP quantum dots in a quantum well Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2132529 |
0.57 |
|
| 2005 |
Zhang XB, Ryou JH, Dupuis RD, Walter G, Holonyak N. Interface alloy mixing effect in the growth of self-assembled InP quantum dots on InAlGaP matrices by metalorganic chemical-vapor deposition Journal of Applied Physics. 98: 63501. DOI: 10.1063/1.2043234 |
0.648 |
|
| 2005 |
Huang XR, Bai J, Dudley M, Dupuis RD, Chowdhury U. Epitaxial tilting of GaN grown on vicinal surfaces of sapphire Applied Physics Letters. 86: 211916. DOI: 10.1063/1.1940123 |
0.343 |
|
| 2005 |
Bai J, Dudley M, Chen L, Skromme B, Wagner B, Davis RF, Chowdhury U, Dupuis RD. Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates Journal of Applied Physics. 97: 116101. DOI: 10.1063/1.1914956 |
0.301 |
|
| 2005 |
Cao Y, Zhang J, Li X, Kosel TH, Fay P, Hall DC, Zhang XB, Dupuis RD, Jasinski JB, Liliental-Weber Z. Electrical properties of inalp native oxides for metal-oxide-semiconductor device applications Applied Physics Letters. 86: 62105. DOI: 10.1063/1.1861981 |
0.368 |
|
| 2005 |
Chung T, Limb JB, Chowdhury U, Li P, Ryou JH, Yoo D, Zakharov D, Liliental-Weber Z, Dupuis RD. MOCVD growth of InGaN:Mg for GaN/InGaN HBTs Physica Status Solidi C: Conferences. 2: 2157-2160. DOI: 10.1002/Pssc.200461598 |
0.391 |
|
| 2004 |
Bai J, Dudley M, Chen L, Skromme BJ, Hartlieb PJ, Michaels E, Kolis JW, Wagner B, Davis RF, Chowdhury U, Dupuis RD. Relationship of basal plane and prismatic stacking faults in GaN to low temperature photoluminescence peaks at ∼3.4 eV and ∼3.2 eV Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E11.37 |
0.369 |
|
| 2004 |
Keogh DM, Li JC, Conway AM, Qiao D, Raychaudhuri S, Asbeck PM, Dupuis RD, Feng M. Analysis of GaN HBT structures for high power, high efficiency microwave amplifiers International Journal of High Speed Electronics and Systems. 14: 831-836. DOI: 10.1142/S0129156404002910 |
0.358 |
|
| 2004 |
Hull BA, Mohney SE, Chowdhury U, Dupuis RD. Compositional shift in Al[sub x]Ga[sub 1−x]N beneath annealed metal contacts Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 654. DOI: 10.1116/1.1676683 |
0.308 |
|
| 2004 |
Hampson MD, Shen SC, Schwindt RS, Price RK, Chowdhury U, Wong MM, Gang Zhu T, Yoo D, Dupuis RD, Feng M. Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz Ieee Electron Device Letters. 25: 238-240. DOI: 10.1109/Led.2004.826565 |
0.375 |
|
| 2004 |
Hull BA, Mohney SE, Chowdhury U, Dupuis RD. Ohmic contacts to p-type Al 0.45Ga 0.55N Journal of Applied Physics. 96: 7325-7331. DOI: 10.1063/1.1814169 |
0.367 |
|
| 2004 |
Simpkins BS, Yu ET, Chowdhury U, Wong MM, Zhu TG, Yoo DW, Dupuis RD. Local conductivity and surface photovoltage variations due to magnesium segregation in p-type GaN Journal of Applied Physics. 95: 6225-6231. DOI: 10.1063/1.1713025 |
0.305 |
|
| 2004 |
Chowdhury U, Price RK, Wong MM, Yoo D, Zhang X, Feng M, Dupuis RD. Modulation-doped superlattice AlGaN barrier GaN/AlGaN HFETs Journal of Crystal Growth. 272: 318-321. DOI: 10.1016/J.Jcrysgro.2004.08.058 |
0.452 |
|
| 2004 |
Wang JH, Mohney SE, Wang SH, Chowdhury U, Dupuis RD. Vanadium-based ohmic contacts to n-type Al0.6Ga0.4N Journal of Electronic Materials. 33: 418-421. DOI: 10.1007/S11664-004-0194-7 |
0.351 |
|
| 2003 |
Chen L, Skromme B, Mikhov MK, Yamane H, Aoki M, DiSalvo FJ, Wagner B, Davis RF, Grudowski PA, Dupuis RD. Structural Defect-Related Photoluminescence in GaN Mrs Proceedings. 798: 637-642. DOI: 10.1557/Proc-798-Y5.55 |
0.302 |
|
| 2003 |
Wong MM, Chowdhury U, Sicault D, Becher DT, Denyszyn JC, Choi JH, Zhu TG, Feng M, Dupuis RD. Improved performance of AlGaN/GaN heterojunction field-effect transistors using delta doping and a binary barrier Japanese Journal of Applied Physics, Part 2: Letters. 42: L353-L355. DOI: 10.1143/Jjap.42.L353 |
0.689 |
|
| 2003 |
Wraback M, Shen H, Rudin S, Bellotti E, Goano M, Carrano JC, Collins CJ, Campbell JC, Dupuis RD. Direction-dependent band nonparabolicity effects on high-field transient electron transport in GaN Applied Physics Letters. 82: 3674-3676. DOI: 10.1063/1.1577833 |
0.482 |
|
| 2003 |
Zhu TG, Chowdhury U, Denyszyn JC, Wong MM, Dupuis RD. AlGaN/AlGaN UV light-emitting diodes grown on sapphire by metalorganic chemical vapor deposition Journal of Crystal Growth. 248: 548-551. DOI: 10.1016/S0022-0248(02)01930-9 |
0.7 |
|
| 2003 |
Chowdhury U, Wong MM, Collins CJ, Yang B, Denyszyn JC, Campbell JC, Dupuis RD. High-performance solar-blind photodetector using an Al0.6Ga0.4N n-type window layer Journal of Crystal Growth. 248: 552-555. DOI: 10.1016/S0022-0248(02)01877-8 |
0.736 |
|
| 2003 |
Ryou JH, Dupuis RD. Growth of ternary InAlP and InGaP self-assembled quantum dots by metalorganic chemical vapor deposition Journal of Electronic Materials. 32: 18-22. DOI: 10.1007/S11664-003-0247-3 |
0.359 |
|
| 2003 |
Zhang XB, Heller RD, Noh MS, Dupuis RD, Walter G, Holonyak N. Improved area density and luminescence properties of InP quantum dots grown on In0.5Al0.5P by metal-organic chemical vapor deposition Journal of Electronic Materials. 32: 1335-1338. DOI: 10.1007/S11664-003-0032-3 |
0.664 |
|
| 2002 |
Noh MS, Ryou JH, Chang Y, Weissman R, Dupuis RD. Properties of GaAsSb QW Heterostructures Having Various Barrier Materials Grown by Metalorganic Chemical Vapor Deposition Mrs Proceedings. 744. DOI: 10.1557/Proc-744-M4.6 |
0.603 |
|
| 2002 |
Chowdhury U, Collins CJ, Wong MM, Zhu TG, Denyszyn JC, Choi JH, Yang B, Campbell JC, Dupuis RD. Epitaxial growth for solar-blind AlGaN photodetector imaging arrays by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 743: 499-503. DOI: 10.1557/Proc-743-L7.9 |
0.691 |
|
| 2002 |
Hull BA, Mohney SE, Chowdhury U, Dupuis RD, Gotthold D, Birkhahn R, Pophristic M. Contacts to High Aluminum Fraction p-type Aluminum Gallium Nitride Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L12.2 |
0.639 |
|
| 2002 |
Dupuis RD, Ryou JH, Heller RD, Walter G, Kellogg DA, Holonyak N, Reddy CV, Narayanamurti V, Mathes DT, Hull R. InP self assembled quantum dot lasers grown on GaAs substrates by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 707: 149-154. DOI: 10.1557/Proc-707-H11.6.1 |
0.817 |
|
| 2002 |
Kou L, Hall DC, Strohhöfer C, Polman A, Zhang T, Kolbas RM, Heller RD, Dupuis RD. Er-doped AlGaAs native oxides: Photoluminescence characterization and process optimization Ieee Journal On Selected Topics in Quantum Electronics. 8: 880-890. DOI: 10.1109/Jstqe.2002.801689 |
0.724 |
|
| 2002 |
Zhu TG, Denyszyn JC, Chowdhury U, Wong MM, Dupuis RD. AlGaN-GaN UV light-emitting diodes grown on SiC by metal-organic chemical vapor deposition Ieee Journal On Selected Topics in Quantum Electronics. 8: 298-301. DOI: 10.1109/2944.999184 |
0.513 |
|
| 2002 |
Martínez RE, Appelbaum I, Reddy CV, Sheth R, Russell KJ, Narayanamurti V, Ryou JH, Chowdhury U, Dupuis RD. Electron transport through strongly coupled AlInP/GaInP superlattices Applied Physics Letters. 81: 3576-3578. DOI: 10.1063/1.1519350 |
0.614 |
|
| 2002 |
Collins CJ, Chowdhury U, Wong MM, Yang B, Beck AL, Dupuis RD, Campbell JC. Improved solar-blind detectivity using an AlxGa1-xN heterojunction p-i-n photodiode Applied Physics Letters. 80: 3754-3756. DOI: 10.1063/1.1480484 |
0.726 |
|
| 2002 |
Ryou JH, Dupuis RD, Walter G, Holonyak N, Mathes DT, Hull R, Reddy CV, Narayanamurti V. Properties of InP self-assembled quantum dots embedded in In 0.49(Al xGa 1-x) 0.51P for visible light emitting laser applications grown by metalorganic chemical vapor deposition Journal of Applied Physics. 91: 5313-5320. DOI: 10.1063/1.1454205 |
0.66 |
|
| 2002 |
Readinger ED, Mohney SE, Pribicko TG, Wang JH, Schweitz KO, Chowdhury U, Wong MM, Dupuis RD, Pophristic M, Guo SP. Ohmic contacts to Al-rich n-AlGaN Electronics Letters. 38: 1230-1231. DOI: 10.1049/El:20020800 |
0.312 |
|
| 2002 |
Collins CJ, Chowdhury U, Wong MM, Yang B, Beck AL, Dupuis RD, Campbell JC. Improved solar-blind external quantum efficiency of back-illuminated AlxGa1-xN heterojunction pin photodiodes Electronics Letters. 38: 824-826. DOI: 10.1049/El:20020526 |
0.692 |
|
| 2002 |
Wong MM, Chowdhury U, Sicault D, Becher DT, Denyszyn JC, Zhu TG, Feng M, Dupuis RD. Delta-doped AlGaN/AlN/GaN microwave HFETs grown by metalorganic chemical vapour deposition Electronics Letters. 38: 428-429. DOI: 10.1049/El:20020247 |
0.695 |
|
| 2002 |
Zhu TG, Chowdhury U, Wong MM, Denyszyn JC, Dupuis RD. GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition Journal of Electronic Materials. 31: 406-410. DOI: 10.1007/S11664-002-0092-9 |
0.708 |
|
| 2001 |
Dupuis RD, Lambert DJH, Chowdhury U, Wong MM, Zhu TG, Shelton BS, Huang JJ, Caruth D, Feng M. Growth and Characteristics of AlGaN/GaN HBTs The Japan Society of Applied Physics. 2001: 334-335. DOI: 10.7567/Ssdm.2001.E-4-1 |
0.65 |
|
| 2001 |
Chowdhury U, Wong MM, Collins CJ, Yang B, Zhu TG, Beck AL, Campbell JC, Dupuis RD. High Quantum Efficiency AlGaN/GaN Solar-Blind Photodetectors Grown by Metalorganic Chemical Vapor Deposition Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I12.9.1 |
0.739 |
|
| 2001 |
Huang JJ, Hattendorf M, Feng M, Lambert DJH, Shelton BS, Wong MM, Chowdhury U, Zhu TG, Kwon HK, Dupuis RD. Temperature dependent common emitter current gain and collector-emitter offset voltage study in AlGaN/GaN heterojunction bipolar transistors Ieee Electron Device Letters. 22: 157-159. DOI: 10.1109/55.915594 |
0.804 |
|
| 2001 |
Shelton BS, Zhu TG, Lambert DJH, Dupuis RD. Simulation of the electrical characteristics of high-voltage mesa and planar GaN Schottky and p-i-n rectifiers Ieee Transactions On Electron Devices. 48: 1498-1502. DOI: 10.1109/16.936497 |
0.764 |
|
| 2001 |
Shelton BS, Lambert DJH, Huang JJ, Wong MM, Chowdhury U, Zhu TG, Kwon HK, Liliental-Weber Z, Benarama M, Feng M, Dupuis RD. Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition Ieee Transactions On Electron Devices. 48: 490-494. DOI: 10.1109/16.906441 |
0.822 |
|
| 2001 |
Walter G, Holonyak N, Ryou JH, Dupuis RD. Coupled InP quantum-dot InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructure diode laser operation Applied Physics Letters. 79: 3215-3217. DOI: 10.1063/1.1416158 |
0.662 |
|
| 2001 |
Walter G, Holonyak N, Ryou JH, Dupuis RD. Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructures Applied Physics Letters. 79: 1956-1958. DOI: 10.1063/1.1405153 |
0.641 |
|
| 2001 |
Wraback M, Shen H, Carrano JC, Collins CJ, Campbell JC, Dupuis RD, Schurman MJ, Ferguson IT. Time-resolved electroabsorption measurement of the transient electron velocity overshoot in GaN Applied Physics Letters. 79: 1303-1305. DOI: 10.1063/1.1398318 |
0.516 |
|
| 2001 |
Kwon HK, Eiting CJ, Lambert DJH, Shelton BS, Wong MM, Zhu TG, Dupuis RD. Optical properties of undoped and modulation-doped AlGaN/GaN single heterostructures grown by metalorganic chemical vapor deposition Journal of Applied Physics. 90: 1817-1822. DOI: 10.1063/1.1330767 |
0.798 |
|
| 2001 |
Huang JJ, Caruth D, Feng M, Lambert DJH, Shelton BS, Wong MM, Chowdhury U, Zhu TG, Kwon HK, Dupuis RD. Room and low temperature study of common emitter current gain in AlGaN/GaN heterojunction bipolar transistors Electronics Letters. 37: 393-395. DOI: 10.1049/El:20010263 |
0.799 |
|
| 2001 |
Zavada JM, Ellis CJ, Lin JY, Jiang HX, Seo JT, Hömmerich U, Thaik M, Wilson RG, Grudowski PA, Dupuis RD. Annealing behavior of luminescence from erbium-implanted GaN films Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 81: 127-131. DOI: 10.1016/S0921-5107(00)00689-9 |
0.327 |
|
| 2001 |
Ryou JH, Dupuis RD, Reddy CV, Narayanamurti V, Mathes DT, Hull R, Mintairov A, Merz JL. Growth and characterizations of InP self-assembled quantum dots embedded in InAlP grown on GaAs substrates Journal of Electronic Materials. 30: 471-476. DOI: 10.1007/S11664-001-0085-0 |
0.408 |
|
| 2001 |
Li T, Lambert DJH, Beck AL, Collins CJ, Yang B, Wong MM, Chowdhury U, Dupuis RD, Campbell JC. Low-noise solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors Journal of Electronic Materials. 30: 872-877. DOI: 10.1007/S11664-001-0074-3 |
0.735 |
|
| 2001 |
Wraback M, Semendy F, Shen H, Chowdhury U, Lambert D, Wong M, Dupuis R. Time-Resolved Reflectivity Studies of Carrier Dynamics as a Function of Al Content in AlGaN Alloys Physica Status Solidi (a). 188: 807-810. DOI: 10.1002/1521-396X(200112)188:2<807::Aid-Pssa807>3.0.Co;2-7 |
0.624 |
|
| 2001 |
Zhu TG, Chowdhury U, Wong MM, Kim KS, Denyszyn JC, Dupuis RD. GaN and AlxGa1-xN p-i-n High-Voltage Rectifiers Grown by Metalorganic Chemical Vapor Deposition Physica Status Solidi (a) Applied Research. 188: 301-305. DOI: 10.1002/1521-396X(200111)188:1<301::Aid-Pssa301>3.0.Co;2-G |
0.693 |
|
| 2001 |
Lamarre P, Hairston A, Tobin SP, Wong KK, Sood AK, Reine MB, Pophristic M, Birkham R, Ferguson IT, Singh R, Eddy CR, Chowdhury U, Wong MM, Dupuis RD, Kozodoy P, et al. AlGaN UV focal plane arrays Physica Status Solidi (a). 188: 289-292. DOI: 10.1002/1521-396X(200111)188:1<289::Aid-Pssa289>3.0.Co;2-U |
0.642 |
|
| 2001 |
Campbell JC, Collins CJ, Wong MM, Chowdhury U, Beck AL, Dupuis RD. High Quantum Efficiency at Low Bias AlxGa1-xN p-i-n Photodiodes Physica Status Solidi (a) Applied Research. 188: 283-287. DOI: 10.1002/1521-396X(200111)188:1<283::Aid-Pssa283>3.0.Co;2-H |
0.736 |
|
| 2001 |
Wraback M, Shen H, Bellotti E, Carrano JC, Collins CJ, Campbell JC, Dupuis RD, Schurman MJ, Ferguson IT. Band structure effects on the transient electron velocity overshoot in GaN Physica Status Solidi (B) Basic Research. 228: 585-588. DOI: 10.1002/1521-3951(200111)228:2<585::Aid-Pssb585>3.0.Co;2-Z |
0.506 |
|
| 2001 |
Liliental-Weber Z, Jasinski J, Benamara M, Grzegory I, Porowski S, Lampert D, Eiting C, Dupuis R. Influence of Dopants on Defect Formation in GaN Physica Status Solidi (B). 228: 345-352. DOI: 10.1002/1521-3951(200111)228:2<345::Aid-Pssb345>3.0.Co;2-M |
0.37 |
|
| 2000 |
Wraback M, Shen H, Eiting CJ, Carrano JC, Dupuis RD. Picosecond Photoinduced Reflectivity Studies of GaN Prepared by Lateral Epitaxial Overgrowth Mrs Internet Journal of Nitride Semiconductor Research. 5: 782-788. DOI: 10.1557/S109257830000507X |
0.42 |
|
| 2000 |
Liliental-Weber Z, Benamara M, Swider W, Washburn J, Grzegory I, Porowski S, Dupuis RD, Eiting CJ. Mg segregation, difficulties of p-doping in gan Materials Research Society Symposium - Proceedings. 595. DOI: 10.1557/S1092578300004695 |
0.35 |
|
| 2000 |
Ryou JH, Chowdhuiy U, Dupuis RD, Reddy CV, Narayanamurti V, Mathes DT, Hull R. Self-assembled iii-phospide quantum dots grown by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 583: 39-44. DOI: 10.1557/Proc-583-39 |
0.385 |
|
| 2000 |
Shelton BS, Zhu TG, Wong MM, Kwon HK, Eiting CJ, Lambert DJH, Lirini SP, Dupuis RD. Ultrasmooth GaN etched surfaces using photoelectrochemical wet etching and an ultrasonic treatment Electrochemical and Solid-State Letters. 3: 87-89. DOI: 10.1149/1.1390966 |
0.741 |
|
| 2000 |
Campbell JC, Li T, Wang S, Beck AL, Collins CJ, Yang B, Lambert DJH, Dupuis RD, Carrano JC, Schurman MJ, Ferguson IT. AlGaN/GaN ultraviolet photodetectors Proceedings of Spie - the International Society For Optical Engineering. 4134: 124-132. DOI: 10.1117/12.405335 |
0.549 |
|
| 2000 |
Yang B, Li T, Heng K, Collins C, Wang S, Carrano JC, Dupuis RD, Campbell JC, Schurman MJ, Ferguson IT. Low dark current GaN avalanche photodiodes Ieee Journal of Quantum Electronics. 36: 1389-1391. DOI: 10.1109/3.892557 |
0.57 |
|
| 2000 |
Yang B, Heng K, Li T, Collins CJ, Wang S, Dupuis RD, Campbell JC, Schurman MJ, Ferguson IT. 32/spl times/32 ultraviolet Al/sub 0.1/Ga/sub 0.9/N/GaN p-i-n photodetector array Ieee Journal of Quantum Electronics. 36: 1229-1231. DOI: 10.1109/3.890260 |
0.532 |
|
| 2000 |
Collins CJ, Li T, Lambert DJH, Wong MM, Dupuis RD, Campbell JC. Selective regrowth of Al0.30Ga0.70Np–i–nphotodiodes Applied Physics Letters. 77: 2810-2812. DOI: 10.1063/1.1322374 |
0.575 |
|
| 2000 |
Zhu TG, Lambert DJH, Shelton BS, Wong MM, Chowdhury U, Dupuis RD. High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching Applied Physics Letters. 77: 2918-2920. DOI: 10.1063/1.1322050 |
0.681 |
|
| 2000 |
Kwon HK, Eiting CJ, Lambert DJH, Wong MM, Dupuis RD, Liliental-Weber Z, Benamara M. Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition Applied Physics Letters. 77: 2503-2505. DOI: 10.1063/1.1318396 |
0.381 |
|
| 2000 |
Lambert DJH, Wong MM, Chowdhury U, Collins C, Li T, Kwon HK, Shelton BS, Zhu TG, Campbell JC, Dupuis RD. Back illuminated AlGaN solar-blind photodetectors Applied Physics Letters. 77: 1900. DOI: 10.1063/1.1311821 |
0.756 |
|
| 2000 |
Reddy CV, Narayanamurti V, Ryou JH, Chowdhury U, Dupuis RD. Observation of resonant tunneling through a quantized state in InP quantum dots in a double-barrier heterostructure Applied Physics Letters. 77: 1167-1169. DOI: 10.1063/1.1289264 |
0.647 |
|
| 2000 |
Bergman L, Dutta M, Stroscio MA, Komirenko SM, Nemanich RJ, Eiting CJ, Lambert DJH, Kwon HK, Dupuis RD. Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice Applied Physics Letters. 76: 1969-1971. DOI: 10.1063/1.126225 |
0.414 |
|
| 2000 |
Reddy CV, Narayanamurti V, Ryou JH, Chowdhury U, Dupuis RD. Imaging and local current transport measurements of AlInP quantum dots grown on GaP Applied Physics Letters. 76: 1437-1439. DOI: 10.1063/1.126056 |
0.659 |
|
| 2000 |
Carrano JC, Lambert DJH, Eiting CJ, Collins CJ, Li T, Wang S, Yang B, Beck AL, Dupuis RD, Campbell JC. GaN avalanche photodiodes Applied Physics Letters. 76: 924-926. DOI: 10.1063/1.125631 |
0.551 |
|
| 2000 |
Zhu TG, Lambert DJH, Shelton BS, Wong MM, Chowdhury U, Kwon HK, Dupuis RD. High-voltage GaN pin vertical rectifiers with 2 μm thick i-layer Electronics Letters. 36: 1971-1972. DOI: 10.1049/El:20001329 |
0.834 |
|
| 2000 |
Yang B, Lambert D, Li T, Collins C, Wong M, Chowdhury U, Dupuis R, Campbell J. High-performance back-illuminated solar-blind AlGaN metal-semiconductor-metal photodetectors Electronics Letters. 36: 1866. DOI: 10.1049/El:20001301 |
0.704 |
|
| 2000 |
Li T, Lambert DJH, Beck AL, Collins CJ, Yang B, Wong MM, Chowdhury U, Dupuis RD, Campbell JC. Solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors Electronics Letters. 36: 1581-1583. DOI: 10.1049/El:20001110 |
0.725 |
|
| 2000 |
Huang JJ, Hattendorf M, Feng M, Lambert DJH, Shelton BS, Wong MM, Chowdhury U, Zhu TG, Kwon HK, Dupuis RD. Graded-emitter AlGaN/GaN heterojunction bipolar transistors Electronics Letters. 36: 1239-1240. DOI: 10.1049/El:20000887 |
0.83 |
|
| 2000 |
Shelton BS, Huang JJ, Lambert DJH, Zhu TG, Wong MM, Eiting CJ, Kwon HK, Feng M, Dupuis RD. AlGaN/GaN heterojunction bipolar transistors grown by metal organic chemical vapour deposition Electronics Letters. 36: 80-81. DOI: 10.1049/El:20000053 |
0.789 |
|
| 2000 |
Lambert DJH, Huang JJ, Shelton BS, Wong MM, Chowdhury U, Zhu TG, Kwon HK, Liliental-Weber Z, Benarama M, Feng M, Dupuis RD. Growth of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition Journal of Crystal Growth. 221: 730-733. DOI: 10.1016/S0022-0248(00)00808-3 |
0.827 |
|
| 2000 |
Kwon HK, Eiting CJ, Lambert DJH, Shelton BS, Wong MM, Zhu TG, Dupuis RD. Optical properties of undoped and modulation-doped AlxGa1-xN/GaN heterostructures grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 221: 362-367. DOI: 10.1016/S0022-0248(00)00714-4 |
0.799 |
|
| 2000 |
Ki Kwon H, Eiting CJ, Lambert DJH, Wong MM, Shelton BS, Zhu TG, Liliental-Weber Z, Benamura M, Dupuis RD. Time-resolved photoluminescence study of GaN grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 221: 240-245. DOI: 10.1016/S0022-0248(00)00692-8 |
0.782 |
|
| 1999 |
Mazur J, Benamara M, Liliental-Weber Z, Swider W, Washburn J, Eiting C, Dupuis RD. Effect of the Doping and the Al Content on the Microstructure and Morphology of Thin AlxGa1-xN Layers Grown by MOCVD. Mrs Proceedings. 595. DOI: 10.1557/S1092578300004415 |
0.403 |
|
| 1999 |
Liliental-Weber Z, Benamara M, Swider W, Washburn J, Park J, Grudowski PA, Eiting CJ, Dupuis RD. TEM study of defects in laterally overgrown GaN layers Mrs Internet Journal of Nitride Semiconductor Research. 4. DOI: 10.1557/S1092578300002891 |
0.352 |
|
| 1999 |
Wraback M, Shen H, Eiting CJ, Carrano JC, Dupuis RD. Picosecond photoinduced reflectivity studies of GaN prepared by lateral epitaxial overgrowth Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W11.55 |
0.314 |
|
| 1999 |
Benamara M, Liliental-Weber Z, Swider W, Washburn J, Dupuis RD, Grudowski PA, Eiting CJ, Yang JW, Khan MA. Atomic scale analysis of InGaN multi-quantum wells Materials Research Society Symposium - Proceedings. 572: 357-362. DOI: 10.1557/Proc-572-357 |
0.386 |
|
| 1999 |
Dupuis RD, Grudowski PA, Eiting CJ, Park J. Growth of III-N materials and devices by metalorganic chemical vapor deposition Semiconductors. 33: 965-969. DOI: 10.1134/1.1187813 |
0.441 |
|
| 1999 |
Shiojima K, Woodall JM, Eiting CJ, Grudowski PA, Dupuis RD. Effect of defect density on the electrical characteristics of n-type GaN Schottky contacts Journal of Vacuum Science & Technology B. 17: 2030-2033. DOI: 10.1116/1.590866 |
0.44 |
|
| 1999 |
Liliental-Weber Z, Benamara M, Swider W, Washburn J, Grzegory I, Porowski S, Lambert DJH, Eiting CJ, Dupuis RD. Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal-organic chemical-vapor deposition Applied Physics Letters. 75: 4159-4161. DOI: 10.1063/1.125568 |
0.388 |
|
| 1999 |
Kwon HK, Eiting CJ, Lambert DJH, Shelton BS, Wong MM, Zhu T-, Dupuis RD. Radiative recombination of two-dimensional electrons in a modulation-doped Al0.37Ga0.63N/GaN single heterostructure Applied Physics Letters. 75: 2788-2790. DOI: 10.1063/1.125150 |
0.432 |
|
| 1999 |
Li T, Beck AL, Collins C, Dupuis RD, Campbell JC, Carrano JC, Schurman MJ, Ferguson IA. Improved ultraviolet quantum efficiency using a semitransparent recessed window AlGaN/GaN heterojunction p-i-n photodiode Applied Physics Letters. 75: 2421-2423. DOI: 10.1063/1.125034 |
0.595 |
|
| 1999 |
Collins CJ, Li T, Beck AL, Dupuis RD, Campbell JC, Carrano JC, Schurman MJ, Ferguson IA. Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction positive-intrinsic-negative photodiode Applied Physics Letters. 75: 2138-2140. DOI: 10.1063/1.124942 |
0.587 |
|
| 1999 |
Zavada JM, Mair RA, Ellis CJ, Lin JY, Jiang HX, Wilson RG, Grudowski PA, Dupuis RD. Optical transitions in Pr-implanted GaN Applied Physics Letters. 75: 790-792. DOI: 10.1063/1.124514 |
0.341 |
|
| 1999 |
Liliental-Weber Z, Benamara M, Swider W, Washburn J, Grzegory I, Porowski S, Dupuis RD, Eiting CJ. Ordering in bulk GaN : Mg samples: defects caused by Mg doping Physica B: Condensed Matter. 273: 124-129. DOI: 10.1016/S0921-4526(99)00422-6 |
0.361 |
|
| 1999 |
Carrano JC, Li T, Eiting CJ, Dupuis RD, Campbell JC. Very high-speed ultraviolet photodetectors fabricated on GaN Journal of Electronic Materials. 28: 325-333. DOI: 10.1007/S11664-999-0035-9 |
0.538 |
|
| 1999 |
Dupuis RD, Eiting CJ, Grudowski PA, Hsia H, Tang Z, Becher D, Kuo H, Stillman GE, Feng M. Activation of silicon ion-implanted gallium nitride by furnance annealing Journal of Electronic Materials. 28: 319-324. DOI: 10.1007/S11664-999-0034-X |
0.6 |
|
| 1999 |
Shiojima K, McInturff DT, Woodall JM, Grudowski PA, Eiting CJ, Dupuis RD. Electrical characteristics and thermal stability of W, WSiN, and Nb contacts to p-and n- type GaN Journal of Electronic Materials. 28: 228-233. DOI: 10.1007/S11664-999-0019-9 |
0.408 |
|
| 1999 |
Shelton BS, Wong MM, Zhu T-, Eiting CJ, Lambert DJH, Lin DE, Dupuis RD. Dependence of Device Characteristics on the Intrinsic Material Properties of High‐Performance AlGaN/GaN HEMTs Physica Status Solidi (a). 176: 213-217. DOI: 10.1002/(Sici)1521-396X(199911)176:1<213::Aid-Pssa213>3.0.Co;2-9 |
0.337 |
|
| 1999 |
Eiting CJ, Lambert DJH, Kwon HK, Shelton BS, Wong MM, Zhu TG, Dupuis RD. Characterization of AlGaN/GaN Heterostructures Grown by Metalorganic Chemical Vapor Deposition Physica Status Solidi B-Basic Solid State Physics. 216: 193-197. DOI: 10.1002/(Sici)1521-3951(199911)216:1<193::Aid-Pssb193>3.0.Co;2-K |
0.41 |
|
| 1998 |
Yu H, Htoon H, DeLozanne A, Shih CK, Grudowski PA, Dupuis RD, Zeng K, Mair R, Lin JY, Jiang HX. Dynamics of localized excitons in InGaN/GaN quantum wells Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2215-2217. DOI: 10.1116/1.590150 |
0.351 |
|
| 1998 |
Carrano JC, Li T, Grudowski PA, Eiting CJ, Dupuis RD, Campbell JC. Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN Journal of Applied Physics. 83: 6148-6160. DOI: 10.1063/1.367484 |
0.557 |
|
| 1998 |
Eiting CJ, Grudowski PA, Dupuis RD, Hsia H, Tang Z, Becher D, Kuo H, Stillman GE, Feng M. Activation studies of low-dose Si implants in gallium nitride Applied Physics Letters. 73: 3875-3877. DOI: 10.1063/1.122922 |
0.587 |
|
| 1998 |
Carrano JC, Li T, Brown DL, Grudowski PA, Eiting CJ, Dupuis RD, Campbell JC. Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN Applied Physics Letters. 73: 2405-2407. DOI: 10.1063/1.122448 |
0.485 |
|
| 1998 |
Park J, Grudowski PA, Eiting CJ, Dupuis RD. Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition Applied Physics Letters. 73: 333-335. DOI: 10.1063/1.121825 |
0.377 |
|
| 1998 |
Carrano JC, Li T, Grudowski PA, Eiting CJ, Dupuis RD, Campbell JC. Current transport mechanisms in GaN-based metal–semiconductor–metal photodetectors Applied Physics Letters. 72: 542-544. DOI: 10.1063/1.120752 |
0.543 |
|
| 1998 |
Carrano J, Li T, Brown D, Grudowski P, Eiting C, Dupuis R, Campbell J. High-speed pin ultraviolet photodetectors fabricated on GaN Electronics Letters. 34: 1779. DOI: 10.1049/El:19981272 |
0.542 |
|
| 1998 |
Carrano J, Li T, Grudowski P, Eiting C, Lambert D, Schaub J, Dupuis R, Campbell J. Low dark current pin ultraviolet photodetectors fabricated on GaN grown by metal organic chemical vapour deposition Electronics Letters. 34: 692. DOI: 10.1049/El:19980453 |
0.809 |
|
| 1998 |
Dupuis RD, Park J, Grudowski PA, Eiting CJ, Liliental-Weber Z. Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition Journal of Crystal Growth. 195: 340-345. DOI: 10.1016/S0022-0248(98)00674-5 |
0.386 |
|
| 1998 |
Grudowski PA, Eiting CJ, Dupuis RD. Properties of InGaN multiple-quantum-well heterostructures grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 189: 103-108. DOI: 10.1016/S0022-0248(98)00181-X |
0.467 |
|
| 1998 |
Eiting CJ, Grudowski PA, Dupuis RD. P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition Journal of Electronic Materials. 27: 206-209. DOI: 10.1007/S11664-998-0388-5 |
0.438 |
|
| 1997 |
Eiting CJ, Grudowski PA, Park J, Lambert DJH, Shelton BS, Dupuis RD. Characteristics of Mg‐Doped GaN Grown by Metallorganic Chemical Vapor Deposition Journal of the Electrochemical Society. 144. DOI: 10.1149/1.1837862 |
0.406 |
|
| 1997 |
Grudowski PA, Eiting CJ, Park J, Shelton BS, Lambert DJH, Dupuis RD. Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor deposition Applied Physics Letters. 71: 1537-1539. DOI: 10.1063/1.119959 |
0.456 |
|
| 1997 |
Shmagin IK, Muth JF, Kolbas RM, Dupuis RD, Grudowski PA, Eiting CJ, Park J, Shelton BS, Lambert DJH. Optical data storage in InGaN/GaN heterostructures Applied Physics Letters. 71: 1382-1384. DOI: 10.1063/1.119900 |
0.785 |
|
| 1997 |
Carrano JC, Grudowski PA, Eiting CJ, Dupuis RD, Campbell JC. Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers Applied Physics Letters. 70: 1992-1994. DOI: 10.1063/1.118777 |
0.602 |
|
| 1997 |
Carrano J, Li T, Grudowski P, Eiting C, Dupuis R, Campbell J. High quantum efficiency metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers Electronics Letters. 33: 1980. DOI: 10.1049/El:19971322 |
0.555 |
|
| 1997 |
Eiting CJ, Grudowski PA, Dupuis R. Growth of low resistivity p-type GaN by metal organic chemical vapour deposition Electronics Letters. 33: 1987-1989. DOI: 10.1049/El:19971257 |
0.391 |
|
| 1997 |
Dupuis RD. Epitaxial growth of III–V nitride semiconductors by metalorganic chemical vapor deposition Journal of Crystal Growth. 178: 56-73. DOI: 10.1016/S0022-0248(97)00079-1 |
0.411 |
|
| 1997 |
Islam MR, Dupuis RD, Holmes AL, Curtis AP, Gardner NF, Stillman GE, Baker JE, Hull R. Luminescence characteristics of InAlP-InGaP heterostructures having native-oxide windows Journal of Crystal Growth. 170: 413-417. DOI: 10.1016/S0022-0248(96)00587-8 |
0.673 |
|
| 1997 |
Chelakara RV, Grudowski PA, Dupuis RD. Design and growth of strained-superlattice-barrier heterostructures for use in light-emitting devices Journal of Crystal Growth. 170: 595-599. DOI: 10.1016/S0022-0248(96)00586-6 |
0.46 |
|
| 1997 |
Grudowski PA, Holmes AL, Eiting CJ, Dupuis RD. The effect of substrate misorientation on the optical, structural, and electrical properties of GaN grown on sapphire by MOCVD Journal of Electronic Materials. 26: 257-261. DOI: 10.1007/S11664-997-0160-2 |
0.413 |
|
| 1997 |
Eiting CJ, Grudowski PA, Dupuis RD. The X-ray characterization of InGaN and AiGaN heterostructures for blue-light emitters Jom. 49: 27-30. DOI: 10.1007/Bf02914347 |
0.421 |
|
| 1996 |
Dupuis RD, Holmes AL, Grudowski PA, Fertitta KG, Ponce FA. High-quality III-V nitrides grown by metalorganic chemical vapor deposition Materials Research Society Symposium - Proceedings. 395: 183-188. DOI: 10.1557/Proc-395-183 |
0.361 |
|
| 1996 |
Murtaza S, Tan I, Bowers J, Hu E, Anselm K, Islam M, Chelakara R, Dupuis R, Streetman B, Campbell J. High-finesse resonant-cavity photodetectors with an adjustable resonance frequency Journal of Lightwave Technology. 14: 1081-1089. DOI: 10.1109/50.511609 |
0.561 |
|
| 1996 |
Grudowski PA, Chelakara RV, Dupuis RD. An InAlAs/InGaAs metal‐oxide‐semiconductor field effect transistor using the native oxide of InAlAs as a gate insulation layer Applied Physics Letters. 69: 388-390. DOI: 10.1063/1.118070 |
0.321 |
|
| 1996 |
Murtaza SS, Chelakara RV, Dupuis RD, Campbell JC, Dentai AG. Resonant‐cavity photodiode operating at 1.55 μm with Burstein‐shifted In0.53Ga0.47As/InP reflectors Applied Physics Letters. 69: 2462-2464. DOI: 10.1063/1.117498 |
0.488 |
|
| 1996 |
Grudowski PA, Holmes AL, Eiting CJ, Dupuis RD. The effect of substrate misorientation on the photoluminescence properties of GaN grown on sapphire by metalorganic chemical vapor deposition Applied Physics Letters. 69: 3626-3628. DOI: 10.1063/1.117004 |
0.397 |
|
| 1996 |
Islam MR, Dupuis RD, Curtis AP, Stillman GE. Effects of thermally grown native oxides on the luminescence properties of compound semiconductors Applied Physics Letters. 69: 946-948. DOI: 10.1063/1.116952 |
0.634 |
|
| 1996 |
Islam MR, Dupuis RD, Holmes AL, Gardner NF, Curtis AP, Stillman GE, Baker JE. Enhanced luminescence from InAIP-InGaP quantum wells with native-oxide windows Electronics Letters. 32: 401-402. DOI: 10.1049/El:19960235 |
0.458 |
|
| 1996 |
Grudowski PA, Holmes AL, Eiting CJ, Dupuis RD. The luminescence characteristics of GaN heteroepitaxial films Jom. 48: 46-49. DOI: 10.1007/Bf03223027 |
0.428 |
|
| 1995 |
Murtaza SS, Tan I-, Chelakara RV, Islam MR, Srinivasan A, Anselm KA, Bowers JE, Hu EL, Dupuis RD, Streetman BG, Campbell JC. High-efficiency, dual-wavelength, wafer-fused resonant-cavity photodetector operating at long wavelengths Ieee Photonics Technology Letters. 7: 679-681. DOI: 10.1109/68.388763 |
0.532 |
|
| 1995 |
Islam MR, Chelakara RV, Dupuis RD. InAlP/InGaP strain‐modulated aperiodic superlattice heterobarrier for enhanced electron confinement in visible (λ∼650 nm) light‐emitting devices Applied Physics Letters. 67: 2057-2059. DOI: 10.1063/1.115077 |
0.463 |
|
| 1995 |
Ries MJ, Holonyak N, Chen EI, Maranowski SA, Islam MR, Holmes AL, Dupuis RD. Visible-spectrum (λ=650 nm) photopumped (pulsed, 300 K) laser operation of a vertical-cavity AlAs-AlGaAs/InAlP-InGaP quantum well heterostructure utilizing native oxide mirrors Applied Physics Letters. 67: 1107. DOI: 10.1063/1.114976 |
0.389 |
|
| 1995 |
Richard TA, Maranowski SA, Holonyak N, Chen EI, Ries MJ, Neff JG, Grudowski PA, Dupuis RD. Enhanced hot-carrier spontaneous and stimulated recombination in a photopumped vertical cavity AlxGa1-xAs-GaAs quantum well heterostructure with multiple top and bottom native oxide mirrors Applied Physics Letters. 589. DOI: 10.1063/1.114022 |
0.401 |
|
| 1995 |
Holmes AL, Islam MR, Chelakara RV, Ciuba FJ, Dupuis RD, Ries MJ, Chen EI, Maranowski SA, Holonyak N. High-reflectivity visible-wavelength semiconductor native oxide Bragg reflectors grown by metalorganic chemical vapor deposition Applied Physics Letters. 66: 2831. DOI: 10.1063/1.113444 |
0.438 |
|
| 1995 |
Chelakara RV, Islam MR, Dupuis RD. Enhancement of potential barrier height by superlattice barriers in the InGaAsP/InP materials system Electronics Letters. 31: 321-323. DOI: 10.1049/El:19950200 |
0.386 |
|
| 1995 |
Islam MR, Chelakara RV, Neff JG, Fertitta KG, Grudowski PA, Holmes AL, Ciuba FJ, Dupuis RD, Fouquet JE. The growth and characterization of AlGaAs double heterostructures for the evaluation of reactor and source quality Journal of Electronic Materials. 24: 787-792. DOI: 10.1007/Bf02659741 |
0.367 |
|
| 1995 |
Fertitta KG, Holmes AL, Ciuba FJ, Dupuis RD, Ponce FA. High-quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition Journal of Electronic Materials. 24: 257-261. DOI: 10.1007/Bf02659684 |
0.362 |
|
| 1994 |
Pinzone CJ, Neff IG, Chelakara RV, Fertitta K, Dupuis RD. The Use of Tetraethyltin as an N Type Dopant Source in GAAs, ALGAAs, and ALAS for Lasers and Bragg Reflectors Grown by MOCVD Mrs Proceedings. 340: 283. DOI: 10.1557/Proc-340-283 |
0.359 |
|
| 1994 |
Fertitta KG, Holmes AL, Neff JG, Ciuba FJ, Dupuis RD. High‐quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition Applied Physics Letters. 65: 1823-1825. DOI: 10.1063/1.112855 |
0.328 |
|
| 1994 |
Chelakara RV, Islam MR, Neff JG, Fertitta KG, Holmes AL, Ciuba FJ, Dupuis RD, Richard TA, Holonyak N, Hsieh KC. Short-Wavelength Room-Temperature Continuous-Wave Laser Operation Of Inalp-Ingap Superlattices Grown By Metalorganic Chemical Vapor Deposition Applied Physics Letters. 65: 854-856. DOI: 10.1063/1.112181 |
0.358 |
|
| 1994 |
Holmes AL, Fertitta KG, Ciuba FJ, Dupuis RD. X-ray diffraction studies of high-quality GaN heteroepitaxial films grown by metal organic chemical vapour deposition Electronics Letters. 30: 1252-1254. DOI: 10.1049/El:19940820 |
0.344 |
|
| 1994 |
Neff J, Islam M, Chelakara R, Fertitta K, Ciuba F, Dupuis R. Characterization of GaP / InGaP and GaP / GaAsP strained-layer quantum wells grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 145: 746-751. DOI: 10.1016/0022-0248(94)91137-1 |
0.426 |
|
| 1994 |
Chelakara RV, Islam MR, Neff JG, Fertitta KG, Holmes AL, Ciuba FJ, Dupuis RD. Growth of high-quality InAlP/InGaP quantum wells and InAlP/InGaP superlattice barrier cladding layers by metalorganic chemical vapor deposition Journal of Crystal Growth. 145: 179-186. DOI: 10.1016/0022-0248(94)91047-2 |
0.492 |
|
| 1993 |
Lei C, Huang Z, Deppe DG, Pinzone CJ, Dupuis RD. Spectral interference effects in the light emission from Fabry-Perot cavities Journal of Applied Physics. 73: 2700-2704. DOI: 10.1063/1.353041 |
0.54 |
|
| 1993 |
Lei C, Pinzone CJ, Huang Z, Huffaker DL, Deppe DG, Dupuis RD. Room temperature spontaneous emission in five-micron-long Fabry-Pérot vertical cavities Journal of Applied Physics. 73: 3153-3157. DOI: 10.1063/1.352984 |
0.542 |
|
| 1992 |
Dupuis RD, Neff JG, Pinzone CJ. Very smooth AlGaAs-GaAs quantum wells grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 124: 558-564. DOI: 10.1016/0022-0248(92)90517-M |
0.435 |
|
| 1991 |
Tsai C, Campbell JC, Dupuis RD. Optically controlled varactor diode Journal of Applied Physics. 70: 3989-3991. DOI: 10.1063/1.349167 |
0.512 |
|
| 1991 |
Dupuis RD, Deppe DG, Pinzone CJ, Gerrard ND, Singh S, Zydzik GJ, van der Ziel JP, Green CA. In 0.47Ga0.53As-InP heterostructures for vertical cavity surface emitting lasers at 1.65 μm wavelength Journal of Crystal Growth. 107: 790-795. DOI: 10.1016/0022-0248(91)90559-N |
0.594 |
|
| 1990 |
Dallesasse JM, El-Zein N, Holonyak N, Hsieh KC, Burnham RD, Dupuis RD. Environmental degradation of AlxGa1−xAs‐GaAs quantum‐well heterostructures Journal of Applied Physics. 68: 2235-2238. DOI: 10.1063/1.346527 |
0.694 |
|
| 1990 |
Pinzone CJ, Gerrard ND, Dupuis RD, Ha NT, Luftman HS. Heavily-doped n-type InP and InGaAs grown by metalorganic chemical vapor deposition using tetraethyltin Journal of Applied Physics. 67: 6823-6829. DOI: 10.1063/1.345072 |
0.444 |
|
| 1990 |
Deppe DG, Gerrard ND, Pinzone CJ, Dupuis RD, Schubert EF. Quarter-wave Bragg reflector stack of InP-In0.53Ga 0.47As for 1.65 μm wavelength Applied Physics Letters. 56: 315-317. DOI: 10.1063/1.102814 |
0.511 |
|
| 1987 |
Van Der Ziel JP, Dupuis RD, Logan RA, Pinzone CJ. Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates Applied Physics Letters. 51: 89-91. DOI: 10.1063/1.98997 |
0.437 |
|
| 1987 |
Van Der Ziel JP, Dupuis RD, Logan RA, Mikulyak RM, Pinzone CJ, Savage A. Low threshold pulsed and continuous laser oscillation from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Si substrates Applied Physics Letters. 50: 454-456. DOI: 10.1063/1.98266 |
0.4 |
|
| 1987 |
Dupuis RD, Van Der Ziel JP, Logan RA, Brown JM, Pinzone CJ. Low-threshold high-efficiency AlGaAs-GaAs double-heterostructure injection lasers grown on Si substrates by metalorganic chemical vapor deposition Applied Physics Letters. 50: 407-409. DOI: 10.1063/1.98185 |
0.442 |
|
| 1986 |
Ziel JPvd, Dupuis RD, Bean JC. Low threshold, optically pumped, room‐temperature laser oscillation at 0.88 μm from AlGaAs/GaAs double heterostructures grown by metalorganic chemical vapor deposition on Ge‐coated Si substrates Applied Physics Letters. 48: 1713-1715. DOI: 10.1063/1.96812 |
0.43 |
|
| 1985 |
Ziel Jvd, Logan R, Dupuis R. High-power (AlGa)As strip-buried heterostructure lasers Ieee Journal of Quantum Electronics. 21: 1659-1665. DOI: 10.1109/Jqe.1985.1072556 |
0.392 |
|
| 1984 |
Ziel Jvd, Mikulyak R, Temkin H, Logan R, Dupuis R. Optical beam characteristics of Schottky barrier confined arrays of phase-coupled multiquantum well GaAs lasers Ieee Journal of Quantum Electronics. 20: 1259-1266. DOI: 10.1109/Jqe.1984.1072310 |
0.318 |
|
| 1984 |
Temkin H, Dupuis RD, Logan RA, Ziel JPvd. Schottky barrier restricted arrays of phase‐coupled AlGaAs quantum well lasers Applied Physics Letters. 44: 473-475. DOI: 10.1063/1.94822 |
0.398 |
|
| 1984 |
Ziel JPvd, Temkin H, Dupuis RD, Mikulyak RM. Mode‐locked picosecond pulse generation from high power phase‐locked GaAs laser arrays Applied Physics Letters. 44: 357-359. DOI: 10.1063/1.94774 |
0.304 |
|
| 1980 |
Dupuis RD. (Invited) Ga1-xAlxAs–GaAs Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition Japanese Journal of Applied Physics. 19: 415-423. DOI: 10.7567/Jjaps.19S1.415 |
0.396 |
|
| 1980 |
Holonyak N, Kolbas RM, Laidig WD, Vojak BA, Hess K, Dupuis RD, Dapkus PD. PHONON-ASSISTED RECOMBINATION AND STIMULATED EMISSION IN QUANTUM-WELL Al//xGa//1// minus //xAs-GaAs HETEROSTRUCTURES. Journal of Applied Physics. 51: 1328-1337. DOI: 10.1063/1.327818 |
0.635 |
|
| 1979 |
Milano R, Windhorn T, Anderson E, Stillman G, Dupuis R, Dapkus P. WA-B5 narrow-base Al0.5Ga0.5As/GaAs heterojunction phototransistors grown by metalorganic chemical vapor deposition Ieee Transactions On Electron Devices. 26: 1851-1851. DOI: 10.1109/T-Ed.1979.19766 |
0.6 |
|
| 1979 |
Holonyak N, Dupuis RD, Kolbas RM, Dapkus PD, Laidig WD, Vojak BA, Chin R. TA-B7 Phonon-Assisted Recombination in Quantum-Well MO-CVD AlxGa1−xAs-GaAs Heterostructure Lasers Ieee Transactions On Electron Devices. 26: 1837. DOI: 10.1109/T-Ed.1979.19726 |
0.612 |
|
| 1979 |
Milano RA, Windhorn TH, Anderson ER, Stillman GE, Dupuis RD, Dapkus PD. Al0.5Ga0.5As‐GaAs heterojunction phototransistors grown by metalorganic chemical vapor deposition Applied Physics Letters. 34: 562-564. DOI: 10.1063/1.90867 |
0.649 |
|
| 1979 |
Vojak BA, Holonyak N, Chin R, Rezek EA, Dupuis RD, Dapkus PD. Tunnel injection and phonon‐assisted recombination in multiple quantum‐well AlxGa1−xAs‐GaAs p‐n heterostructure lasers grown by metalorganic chemical vapor deposition Journal of Applied Physics. 50: 5835-5840. DOI: 10.1063/1.326730 |
0.408 |
|
| 1979 |
Vojak BA, Kirchoefer SW, Holonyak N, Chin R, Dupuis RD, Dapkus PD. Low‐temperature operation of multiple quantum‐well AlxGa1−xAs‐GaAs p‐n heterostructure lasers grown by metalorganic chemical vapor deposition Journal of Applied Physics. 50: 5830-5834. DOI: 10.1063/1.326729 |
0.439 |
|
| 1978 |
Holonyak N, Kolbas RM, Dupuis RD, Dapkus PD. MP-B1 Photopumped MO-CVD Quantum-Well Al<inf>x</inf>Ga<inf>1−x</inf>As GaAs-AlxGa<inf>1−x</inf>As Heterostructure Lasers (x = 0.4–0.6, Lz ⩽ 200 Å T = 4.2–300 K) Ieee Transactions On Electron Devices. 25: 1342. DOI: 10.1109/T-Ed.1978.19293 |
0.687 |
|
| 1978 |
Holonyak N, Kolbas RM, Laidig WD, Vojak BA, Dupuis RD, Dapkus PD. Low-threshold continuous laser operation (300-337°K) of multilayer MO-CVD AlxGa1-xAs-GaAs quantum-well heterostructures Applied Physics Letters. 33: 737-739. DOI: 10.1063/1.90522 |
0.669 |
|
| 1978 |
Holonyak N, Kolbas RM, Rezek EA, Chin R, Dupuis RD, Dapkus PD. Bandfilling in metalorganic chemical vapor deposited AlxGa 1-xAs-GaAs-AlxGa1-xAs quantum-well heterostructure lasers Journal of Applied Physics. 49: 5392-5397. DOI: 10.1063/1.324494 |
0.639 |
|
| 1973 |
Holonyak N, Dupuis R, Macksey H, Zack G, Craford M, Finn D. Photoexcited resonance-enhanced nitrogen-trap GaAs 1-x P x :N laser Ieee Journal of Quantum Electronics. 9: 379-383. DOI: 10.1109/Jqe.1973.1077464 |
0.314 |
|
| 1973 |
Macksey HM, Holonyak N, Dupuis RD, Campbell JC, Zack GW. Crystal synthesis, electrical properties, and spontaneous and stimulated photoluminescence of In1−xGaxP:N grown from solution Journal of Applied Physics. 44: 1333-1341. DOI: 10.1063/1.1662349 |
0.327 |
|
| 1973 |
Macksey HM, Lee MH, Holonyak N, Hitchens WR, Dupuis RD, Campbell JC. Crystal and luminescence properties of constant‐temperature liquid‐phase‐expitaxial In1−xGaxP (x [inverted lazy s]0.7) grown on (100) GaAs1−xPx(x [inverted lazy s]0.4) Journal of Applied Physics. 44: 5035-5040. DOI: 10.1063/1.1662083 |
0.352 |
|
| 1973 |
Dupuis R, Holonyak N, Lee M, Campbell J, Craford M, Finn D, Keune D. Laser operation of GaAs1−xPx:N (x= 0.37, 77 °K) on photopumped NN3pair transitions Applied Physics Letters. 22: 369-371. DOI: 10.1063/1.1654677 |
0.336 |
|
| 1972 |
Holonyak N, Scifres DR, MacKsey HM, Dupuis RD, Moroz YS, Duke CB, Kleiman GG, Williams FV. Stimulated emission and laser operation (cw, 77°K) associated with deep isoelectronic traps in indirect semiconductors Physical Review Letters. 28: 230-233. DOI: 10.1103/Physrevlett.28.230 |
0.307 |
|
| 1972 |
Scifres DR, Holonyak N, Macksey HM, Dupuis RD, Zack GW, Craford MG, Groves WO, Keune DL. Stimulated Emission and Laser Operation (cw, 77°K) of Direct and Indirect GaAs1−xPx on Nitrogen Isoelectronic Trap Transitions Journal of Applied Physics. 43: 2368-2375. DOI: 10.1063/1.1661505 |
0.317 |
|
| 1972 |
Holonyak N, Scifres DR, Macksey HM, Dupuis RD. Long‐Wavelength Shift in the Operation of Lightly Doped Semiconductor Lasers Journal of Applied Physics. 43: 2302-2306. DOI: 10.1063/1.1661495 |
0.333 |
|
| 1972 |
Scifres DR, Macksey HM, Holonyak N, Dupuis RD. Optically Pumped In1−xGax P Platelet Lasers from the Infrared to the Yellow (8900−5800 Å, 77°K) Journal of Applied Physics. 43: 1019-1022. DOI: 10.1063/1.1661211 |
0.338 |
|
| 1972 |
Duke CB, Smith DL, Kleiman GG, Macksey HM, Holonyak N, Dupuis RD, Campbell JC. Resonant enhancement of the recombination probability associated with isoelectronic trap states in semiconductor alloys: In1−xGaxP:N laser operation (77 °K) in the yellow‐green (λ≲5560 Å, ℏ ω≳2.23 eV) Journal of Applied Physics. 43: 5134-5140. DOI: 10.1063/1.1661085 |
0.339 |
|
| 1972 |
Holonyak N, Dupuis RD, Macksey HM, Craford MG, Groves WO. Spontaneous and stimulated photoluminescence on nitrogen A‐line and NN‐pair line transitions in GaAs1−x Px : N Journal of Applied Physics. 43: 4148-4153. DOI: 10.1063/1.1660889 |
0.341 |
|
| 1970 |
Keune DL, Holonyak N, Burnham RD, Dapkus PD, Dupuis RD. THIN SEMICONDUCTOR LASER TO THIN PLATELET OPTICAL COUPLER Applied Physics Letters. 16: 18-20. DOI: 10.1063/1.1653015 |
0.522 |
|
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