| Year |
Citation |
Score |
| 2008 |
Ignatiev A, Wu NJ, Chen X, Nian YB, Papagianni C, Liu SQ, Strozier J. Resistance switching in oxide thin films Phase Transitions. 81: 791-806. DOI: 10.1080/01411590802212374 |
0.66 |
|
| 2007 |
Nian YB, Strozier J, Wu NJ, Chen X, Ignatiev A. Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides. Physical Review Letters. 98: 146403. PMID 17501295 DOI: 10.1103/Physrevlett.98.146403 |
0.658 |
|
| 2007 |
Ignatiev A, Wu N, Chen X, Nian Y, Papagianni C, Liu S, Strozier J. Resistance Non-volatile Memory – RRAM Mrs Proceedings. 997. DOI: 10.1557/Proc-0997-I05-03 |
0.737 |
|
| 2007 |
Ignatiev A, Wu N, Chen X, Nian Y, Papagianni C, Liu S, Strozier J. Resistance non-volatile memory - RRAM Materials Research Society Symposium Proceedings. 997: 181-189. |
0.665 |
|
| 2006 |
Chen X, Strozier J, Wu NJ, Ignatiev A, Nian YB. A study of the symmetry properties and multi-state nature of perovskite oxide-based electrical pulse induced resistance-change devices New Journal of Physics. 8. DOI: 10.1088/1367-2630/8/10/229 |
0.59 |
|
| 2006 |
Ignatiev A, Wu NJ, Liu SQ, Chen X, Nian YB, Papaginanni C, Strozier J, Xing ZW. Resistance switching memory effect in transition metal oxide thin films 7th Annual Non-Volatile Memory Technology Symposium, Nvmts. 100-103. |
0.659 |
|
| 2004 |
Ignatiev A, Wu NJ, Nian Y, Luttrell B. Ultra-radiation hard computer memory for space exploration International Astronautical Federation - 55th International Astronautical Congress 2004. 4: 2099-2103. |
0.598 |
|
| Show low-probability matches. |