| Year |
Citation |
Score |
| 2020 |
Chen Y, Zuo P, Guan Y, Yusuf MH, Babcock SE, Kuech TF, Evans PG. Reduction of interface reactions in low-temperature solid-phase epitaxy of ScAlMgO4 on (0001) Al2O3 Crystal Growth & Design. 20: 6001-6007. DOI: 10.1021/Acs.Cgd.0C00721 |
0.341 |
|
| 2020 |
Guan Y, Luo G, Morgan D, Babcock SE, Kuech TF. Thermodynamic stability analysis of Bi-containing III-V quaternary alloys and the effect of epitaxial strain Journal of Physics and Chemistry of Solids. 138: 109245. DOI: 10.1016/J.Jpcs.2019.109245 |
0.353 |
|
| 2020 |
Guan Y, Rajeev A, Babcock SE, Mawst LJ, Kuech TF. Metal-organic vapor phase epitaxy of the quaternary metastable alloy In1–xGaxAs1−yBiy and its kinetics of growth Journal of Crystal Growth. 538: 125611. DOI: 10.1016/J.Jcrysgro.2020.125611 |
0.387 |
|
| 2020 |
Knipfer B, Rajeev A, Isheim D, Kirch J, Babcock S, Kuech T, Earles T, Botez D, Mawst L. Layer-thickness dependence of the compositions in strained III–V superlattices by atom probe tomography Journal of Crystal Growth. 535: 125550. DOI: 10.1016/J.Jcrysgro.2020.125550 |
0.417 |
|
| 2018 |
Rajeev A, Chen W, Kirch J, Babcock S, Kuech T, Earles T, Mawst L. Interfacial Mixing Analysis for Strained Layer Superlattices by Atom Probe Tomography Crystals. 8: 437. DOI: 10.3390/CRYST8110437 |
0.313 |
|
| 2018 |
Kim H, Guan Y, Babcock SE, Kuech TF, Mawst LJ. Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing Journal of Applied Physics. 123: 113102. DOI: 10.1063/1.5017965 |
0.401 |
|
| 2018 |
Evans PG, Chen Y, Tilka JA, Babcock SE, Kuech TF. Crystallization of amorphous complex oxides: New geometries and new compositions via solid phase epitaxy Current Opinion in Solid State and Materials Science. 22: 229-242. DOI: 10.1016/J.Cossms.2018.09.001 |
0.319 |
|
| 2017 |
Chen Y, Yusuf MH, Guan Y, Jacobson RB, Lagally MG, Babcock SE, Kuech TF, Evans PG. Distinct nucleation and growth kinetics of amorphous SrTiO3 on (001) SrTiO3 and SiO2/Si: A step towards new architectures. Acs Applied Materials & Interfaces. PMID 29094920 DOI: 10.1021/Acsami.7B12978 |
0.396 |
|
| 2017 |
Wood AW, Chen W, Kim H, Guan Y, Forghani K, Anand A, Kuech TF, Mawst LJ, Babcock SE. Annealing-induced precipitate formation behavior in MOVPE-grown GaAs1-x Bi x explored by atom probe tomography and HAADF-STEM. Nanotechnology. 28: 215704. PMID 28471752 DOI: 10.1088/1361-6528/Aa6Cdb |
0.395 |
|
| 2017 |
Guan Y, Forghani K, Kim H, Babcock SE, Mawst LJ, Kuech TF. Surface kinetics study of metal-organic vapor phase epitaxy of GaAs 1−y Bi y on offcut and mesa-patterned GaAs substrates Journal of Crystal Growth. 464: 39-48. DOI: 10.1016/J.Jcrysgro.2017.01.043 |
0.393 |
|
| 2016 |
Wood AW, Collar K, Li J, Brown AS, Babcock SE. Droplet-mediated formation of embedded GaAs nanowires in MBE GaAs1-x Bi x films. Nanotechnology. 27: 115704. PMID 26876494 DOI: 10.1088/0957-4484/27/11/115704 |
0.444 |
|
| 2016 |
Guan Y, Forghani K, Schulte KL, Babcock S, Mawst L, Kuech TF. Enhanced incorporation of p into tensile-strained GaAs1-yPy layers grown by metal-organic vapor phase epitaxy at very low temperatures Ecs Journal of Solid State Science and Technology. 5: P183-P189. DOI: 10.1149/2.0181603Jss |
0.388 |
|
| 2016 |
Jackson DHK, Laskar MR, Fang S, Xu S, Ellis RG, Li X, Dreibelbis M, Babcock SE, Mahanthappa MK, Morgan D, Hamers RJ, Kuech TF. Optimizing AlF3 atomic layer deposition using trimethylaluminum and TaF5: Application to high voltage Li-ion battery cathodes Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4943385 |
0.388 |
|
| 2016 |
Li J, Collar K, Jiao W, Kong W, Kuech TF, Babcock SE, Brown A. Impact of vicinal GaAs(001) substrates on Bi incorporation and photoluminescence in molecular beam epitaxy-grown GaAs1-xBix Applied Physics Letters. 108. DOI: 10.1063/1.4953408 |
0.336 |
|
| 2016 |
Kuech TF, Babcock SE, Mawst L. Growth far from equilibrium: Examples from III-V semiconductors Applied Physics Reviews. 3. DOI: 10.1063/1.4944801 |
0.327 |
|
| 2016 |
Kim H, Forghani K, Guan Y, Kim K, Wood AW, Lee J, Babcock SE, Kuech TF, Mawst LJ. Impact of in-situ annealing on dilute-bismide materials and its application to photovoltaics Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2016.04.039 |
0.406 |
|
| 2016 |
Chen W, Ronsheim PA, Wood AW, Forghani K, Guan Y, Kuech TF, Babcock SE. Atom probe tomography evidence for uniform incorporation of Bi across the growth front in GaAs1-xBix/GaAs superlattice Journal of Crystal Growth. 446: 27-32. DOI: 10.1016/J.Jcrysgro.2016.04.031 |
0.356 |
|
| 2016 |
Rajeev A, Mawst LJ, Kirch JD, Botez D, Miao J, Buelow P, Kuech TF, Li X, Sigler C, Babcock SE, Earles T. Regrowth of quantum cascade laser active regions on metamorphic buffer layers Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2016.01.029 |
0.435 |
|
| 2015 |
Mawst LJ, Rajeev A, Kirch JD, Kim TW, Botez D, Zutter B, Buelow P, Schulte K, Kuech TF, Wood A, Babcock SE, Earles T. Quantum-cascade-laser active regions on metamorphic buffer layers Proceedings of Spie - the International Society For Optical Engineering. 9370. DOI: 10.1117/12.2075457 |
0.39 |
|
| 2015 |
Wood AW, Babcock SE, Li J, Brown AS. Increased bismuth concentration in MBE GaAs1-xBix films by oscillating III/V flux ratio during growth Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4916575 |
0.422 |
|
| 2015 |
Wood AW, Guan Y, Forghani K, Anand A, Kuech TF, Babcock SE. Unexpected bismuth concentration profiles in metal-organic vapor phase epitaxy-grown Ga(As1-xBix)/GaAs superlattices revealed by Z-contrast scanning transmission electron microscopy imaging Apl Materials. 3. DOI: 10.1063/1.4915301 |
0.462 |
|
| 2014 |
Schulte KL, Zutter BT, Wood AW, Babcock SE, Kuech TF. Design and characterization of thick InxGa1-xAs metamorphic buffer layers grown by hydride vapor phase epitaxy Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/3/035013 |
0.445 |
|
| 2014 |
Forghani K, Guan Y, Losurdo M, Luo G, Morgan D, Babcock SE, Brown AS, Mawst LJ, Kuech TF. GaAs1-y-zPyBiz, an alternative reduced band gap alloy system lattice-matched to GaAs Applied Physics Letters. 105. DOI: 10.1063/1.4895116 |
0.368 |
|
| 2014 |
Wood AW, Guan Y, Forghani K, Mawst LJ, Kuech TF, Babcock SE. Unexpected bismuth concentration profiles in MOVPE GaAs<inf>1-x</inf>Bi<inf>x</inf> films revealed by HAADF STEM imaging Microscopy and Microanalysis. 20: 196-197. DOI: 10.1017/S1431927614002700 |
0.339 |
|
| 2014 |
Forghani K, Guan Y, Wood AW, Anand A, Babcock SE, Mawst LJ, Kuech TF. Self-limiting growth when using trimethyl bismuth (TMBi) in the metal-organic vapor phase epitaxy (MOVPE) of GaAs1-yBiy Journal of Crystal Growth. 395: 38-45. DOI: 10.1016/J.Jcrysgro.2014.03.014 |
0.402 |
|
| 2013 |
Schulte KL, Wood AW, Reedy RC, Ptak AJ, Meyer NT, Babcock SE, Kuech TF. Heteroepitaxy of GaAs on (001)→ 6° Ge substrates at high growth rates by hydride vapor phase epitaxy Journal of Applied Physics. 113. DOI: 10.1063/1.4803037 |
0.449 |
|
| 2012 |
Paulson CA, Jha S, Song X, Rathi M, Babcock SE, Mawst L, Kuech TF. The effect of helium ion implantation on the relaxation of strained InGaAs thin films Thin Solid Films. 520: 2147-2154. DOI: 10.1016/J.Tsf.2011.09.028 |
0.387 |
|
| 2010 |
Kirch J, Garrod T, Kim S, Park JH, Shin JC, Mawst LJ, Kuech TF, Song X, Babcock SE, Vurgaftman I, Meyer JR, Kuan TS. InAs yP 1-y metamorphic buffer layers on InP substrates for mid-IR diode lasers Journal of Crystal Growth. 312: 1165-1169. DOI: 10.1016/J.Jcrysgro.2009.12.057 |
0.374 |
|
| 2009 |
Huang JYT, Mawst LJ, Kuech TF, Song X, Babcock SE, Kim CS, Vurgaftman I, Meyer JR, Holmes AL. Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/2/025108 |
0.332 |
|
| 2009 |
Jha S, Liu CC, Kuan TS, Babcock SE, Nealey PF, Park JH, Mawst LJ, Kuech TF. Defect reduction in epitaxial GaSb grown on nanopatterned GaAs substrates using full wafer block copolymer lithography Applied Physics Letters. 95. DOI: 10.1063/1.3204013 |
0.345 |
|
| 2008 |
Kuech TF, Khandekar AA, Rathi M, Mawst LJ, Huang JYT, Song X, Babcock SE, Meyer JR, Vurgaftman I. MOVPE growth of antimonide-containing alloy materials for long wavelength applications Journal of Crystal Growth. 310: 4826-4830. DOI: 10.1016/J.Jcrysgro.2008.09.006 |
0.339 |
|
| 2008 |
Jha S, Song X, Babcock SE, Kuech TF, Wheeler D, Wu B, Fay P, Seabaugh A. Growth of InAs on Si substrates at low temperatures using metalorganic vapor phase epitaxy Journal of Crystal Growth. 310: 4772-4775. DOI: 10.1016/J.Jcrysgro.2008.07.048 |
0.349 |
|
| 2008 |
Huang JYT, Xu DP, Song X, Babcock SE, Kuech TF, Mawst LJ. Growth of strained GaAs1-ySby and GaAs1-y-zSbyNz quantum wells on InP substrates Journal of Crystal Growth. 310: 2382-2389. DOI: 10.1016/J.Jcrysgro.2007.11.207 |
0.388 |
|
| 2008 |
Song X, Babcock SE, Paulson CA, Kuech TF, Huang JYT, Xu DP, Park J, Mawst LJ. Nanostructure of GaAs0.88Sb0.10N0.02/InP quantum wells grown by metalorganic chemical vapor deposition on InP Journal of Crystal Growth. 310: 2377-2381. DOI: 10.1016/J.Jcrysgro.2007.11.018 |
0.375 |
|
| 2007 |
Xu D, Huang JY, Park JH, Mawst LJ, Kuech TF, SONG X, Babcock SE. Characteristics of Strained GaAsSb(N)/InP Quantum Wells Grown by Metalorganic Chemical Vapor Deposition on InP Substrates Mrs Proceedings. 994. DOI: 10.1557/Proc-0994-F11-01 |
0.414 |
|
| 2007 |
Huang JYT, Xu DP, Park JH, Mawst LJ, Kuech TF, Song X, Babcock SE, Vurgaftman I, Meyer JR. Characteristics of strained GaAs1-ySby (0.16 ≤ y ≤ 0.69) quantum wells on InP substrates Journal of Physics D: Applied Physics. 40: 7656-7661. DOI: 10.1088/0022-3727/40/24/010 |
0.364 |
|
| 2007 |
Khandekar AA, Yeh JY, Mawst LJ, Song X, Babcock SE, Kuech TF. Effects of Ga- and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs1-ySby films grown via metalorganic vapor phase epitaxy Journal of Crystal Growth. 303: 456-465. DOI: 10.1016/J.Jcrysgro.2006.12.034 |
0.409 |
|
| 2007 |
Xu D, Huang JYT, Park JH, Mawst LJ, Kuech TF, Song X, Babcock SE. Characteristics of strained GaAsSb(N)/InP quantum wells grown by metalorganic chemical vapor deposition on InP substrates Materials Research Society Symposium Proceedings. 994: 111-116. |
0.309 |
|
| 2007 |
Suryanarayanan G, Khandekar AA, Kuech TF, Babcock SE. Development of lateral epitaxial overgrown InAs microstructure on patterned (100) GaAs substrates Journal of Optoelectronics and Advanced Materials. 9: 1242-1245. |
0.31 |
|
| 2006 |
Khandekar AA, Suryanarayanan G, Babcock SE, Kuech TF. The evolution of the microstructure and morphology of metal-organic vapor-phase epitaxy-grown InAs films on (1 0 0) GaAs Journal of Crystal Growth. 292: 40-52. DOI: 10.1016/J.Jcrysgro.2006.04.086 |
0.484 |
|
| 2005 |
Khandekar AA, Suryanarayanan G, Babcock SE, Kuech TF. InAs growth and development of defect microstructure on GaAs Journal of Crystal Growth. 275. DOI: 10.1016/J.Jcrysgro.2004.11.133 |
0.456 |
|
| 2003 |
Suryanarayanan G, Khandekar AA, Kuech TF, Babcock SE. Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates Applied Physics Letters. 83: 1977-1979. DOI: 10.1063/1.1609231 |
0.477 |
|
| 2002 |
Suryanarayanan G, Khandekar AA, Hawkins BE, Kuech TF, Babcock SE. Lateral Epitaxial Overgrowth of InAs on (100) GaAs Substrates Mrs Proceedings. 744. DOI: 10.1557/Proc-744-M1.4 |
0.452 |
|
| 2002 |
Song X, Babcock SE, Eom CB, Larbalestier DC, Regan KA, Cava RJ, Bud'Ko SL, Canfield PC, Finnemore DK. Anisotropic grain morphology, crystallographic texture and their implications for flux pinning mechanisms in MgB2 pellets, filaments and thin films Superconductor Science and Technology. 15: 511-518. DOI: 10.1088/0953-2048/15/4/306 |
0.468 |
|
| 2002 |
Yang CY, Babcock SE, Ichinose A, Goyal A, Kroeger DM, Lee DF, List FA, Norton DP, Mathis JE, Paranthaman M, Park C. Microstructure of pulsed laser deposited YBa2Cu3O7-δ films on yttria-stabilized zirconia/CeO2 buffered biaxially textured Ni substrates Physica C: Superconductivity and Its Applications. 377: 333-347. DOI: 10.1016/S0921-4534(01)01285-0 |
0.563 |
|
| 2001 |
Aytug T, Kang BW, Cantoni C, Specht ED, Paranthaman M, Goyal A, Christen DK, Verebelyi DT, Wu JZ, Ericson RE, Thomas CL, Yang C, Babcock SE. Growth and characterization of conductive SrRuO3 and LaNiO3 multilayers on textured Ni tapes for high-Jc Yba2Cu3O7–delta; coated conductors Journal of Materials Research. 16: 2661-2669. DOI: 10.1557/Jmr.2001.0365 |
0.377 |
|
| 2001 |
Feldmann DM, Reeves JL, Polyanskii AA, Goyal A, Feenstra R, Lee DF, Paranthaman M, Kroeger DM, Christen DK, Babcock SE, Larbalestier DC. Magneto-optical imaging of transport currents in YBa2Cu3O7-x on RABiTS™ Ieee Transactions On Applied Superconductivity. 11: 3772-3775. DOI: 10.1109/77.919885 |
0.379 |
|
| 2001 |
Patnaik S, Cooley LD, Gurevich A, Polyanskii AA, Jiang J, Cai XY, Squitieri AA, Naus MT, Lee MK, Choi JH, Belenky L, Bu SD, Letteri J, Song X, Schlom DG, ... Babcock SE, et al. Electronic anisotropy, magnetic field-temperature phase diagram and their dependence on resistivity in c-axis oriented MgB2 thin films Superconductor Science and Technology. 14: 315-319. DOI: 10.1088/0953-2048/14/6/304 |
0.397 |
|
| 2001 |
Tsu IF, Wang JL, Babcock SE, Polyanskii AA, Larbalestier DC, Sickafus KE. Structure and properties of an intragranular weak link in Bi2Sr2CaCu2O8+x single crystals Physica C: Superconductivity and Its Applications. 349: 8-18. DOI: 10.1016/S0921-4534(00)01523-9 |
0.373 |
|
| 2000 |
Dunn KA, Babcock SE, Stone DS, Matyi RJ, Zhang L, Kuech TF. Dislocation arrangement in a thick LEO GaN film on sapphire Materials Research Society Symposium - Proceedings. 595. DOI: 10.1557/s1092578300004130 |
0.369 |
|
| 2000 |
Dunn KA, Babcock SE, Stone DS, Matyi RJ, Zhang L, Kuech TF. Dislocation arrangement in a thick LEO GaN film on sapphire Materials Research Society Symposium - Proceedings. 595. DOI: 10.1557/S1092578300004130 |
0.464 |
|
| 2000 |
Feng Z, Lovell EG, Engelstad RL, Kuech TF, Babcock SE. Simulation of Stress Generation during GaN Lateral Epitaxial Overgrowth Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G3.15 |
0.352 |
|
| 2000 |
Ichinose A, Yang CY, Daniels G, Liao SY, Larbalestier DC, Babcock SE, Kikuchi A, Tachikaw K, Akita S. Studies of the improvement in microstructure of Y2O3 buffer layers and its effect on YBa2Cu3O7-x film growth Superconductor Science and Technology. 13: 1023-1028. DOI: 10.1088/0953-2048/13/7/320 |
0.536 |
|
| 2000 |
Feldmann DM, Reeves JL, Polyanskii AA, Kozlowski G, Biggers RR, Nekkanti RM, Maartense I, Tomsic M, Barnes P, Oberly CE, Peterson TL, Babcock SE, Larbalestier DC. Influence of nickel substrate grain structure on YBa2Cu3O7-x supercurrent connectivity in deformation-textured coated conductors Applied Physics Letters. 77: 2906-2908. DOI: 10.1063/1.1315631 |
0.435 |
|
| 2000 |
Yang CY, Ichinose A, Babcock SE, Morrell JS, Mathis JE, Verebelyi DT, Paranthaman M, Beach DB, Christen DK. Microstructure of a high Jc, laser-ablated YBa2Cu3O7-δ/sol-gel deposited NdGaO3 buffer layer/(001) SrTiO3 multi-layer structure Physica C: Superconductivity and Its Applications. 331: 73-78. DOI: 10.1016/S0921-4534(99)00624-3 |
0.58 |
|
| 2000 |
Yang CY, Pashitski A, Polyanskii A, Larbalestier DC, Babcock SE, Goyal A, List FA, Park C, Paranthaman M, Norton DP, Lee DF, Kroeger B DM. Micro structural homogeneity and electromagnetic connectivity of YBa2Cu3O7-δ grown on rolling-assisted biaxially textured coated conductor substrates Physica C: Superconductivity and Its Applications. 329: 114-120. DOI: 10.1016/S0921-4534(99)00581-X |
0.547 |
|
| 1999 |
Babcock SE, Yang CY, Reeves JL, Wu Y, Pashitski AE, Polyanskii A, Larbalestier DC, Goyal A, Paranthaman M, List FA, Norton DP, Kroeger DM, Ichinose A. Electromagnetic connectivity and microstructure in YBa2Cu3O7-δ films on rolling-assisted biaxially-textured substrates Materials Science Forum. 294: 165-168. DOI: 10.4028/Www.Scientific.Net/Msf.294-296.165 |
0.416 |
|
| 1999 |
Ichinose A, Yang CY, Larbalestier DC, Babcock SE, Kikuchi A, Tachikawa K, Akita S. Growth conditions and microstructure of Y2O3 buffer layers on cube-textured Ni Physica C: Superconductivity and Its Applications. 324: 113-122. DOI: 10.1016/S0921-4534(99)00478-5 |
0.557 |
|
| 1999 |
Matsubara I, Paranthaman M, Singhal A, Vallet C, Lee DF, Martin PM, Hunt RD, Feenstra R, Yang CY, Babcock SE. Preparation of textured YBCO films using all-iodide precursors Physica C: Superconductivity and Its Applications. 319: 127-132. DOI: 10.1016/S0921-4534(99)00303-2 |
0.518 |
|
| 1999 |
Babcock SE, Dunn KA, Zhou M, Reeves JL, Kuech TF, Hansen DM, Moran PD. Microstructure of epitaxial (InGa)As on a borosilicate glass-bonded compliant substrate Materials Science Forum. 294: 783-786. |
0.356 |
|
| 1999 |
Rehder E, Zhou M, Zhang L, Perkins NR, Babcock SE, Kuech TF. Structure of A1N on Si (111) deposited with metal organic vapor phase epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 4. |
0.342 |
|
| 1999 |
Render E, Zhou M, Zhang L, Perkins NR, Babcock SE, Kuech TF. Structure of ain on Si (111) deposited with metal organic vapor phase epitaxy Materials Research Society Symposium - Proceedings. 537. |
0.341 |
|
| 1998 |
Babcock SE, Dunn KA, Zhou M, Reeves JL, Kuech TF, Hansen DM, Moran PD. Microstructure of Epitaxial (InGa)As on a Borosilicate Glass-Bonded Compliant Substrate Materials Science Forum. 783-786. DOI: 10.4028/Www.Scientific.Net/Msf.294-296.783 |
0.453 |
|
| 1998 |
Rehder E, Zhou M, Zhang L, Perkins NR, Babcock SE, Kuech TF. Structure of Ain on Si (111) Deposited with Metal Organic Vapor Phase Epitaxy Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G3.56 |
0.315 |
|
| 1998 |
Cai XY, Gurevich A, Tsu I, Kaiser DL, Babcock SE, Larbalestier DC. Large enhancement of critical-current density due to vortex matching at the periodic facet structure inYBa2Cu3O7−δbicrystals Physical Review B. 57: 10951-10958. DOI: 10.1103/Physrevb.57.10951 |
0.363 |
|
| 1998 |
Yang CY, Babcock SE, Goyal A, Paranthaman M, List FA, Norton DP, Kroeger DM, Ichinose A. Microstructure of electron-beam-evaporated epitaxial yttria-stabilized zirconia/CeO2 bilayers on biaxially textured Ni tape Physica C: Superconductivity and Its Applications. 307: 87-98. DOI: 10.1016/S0921-4534(98)00419-5 |
0.553 |
|
| 1998 |
Tsu I, Wang J, Kaiser D, Babcock S. A comparison of grain boundary topography and dislocation network structure in bulk-scale [001] tilt bicrystals of Bi2Sr2CaCu2O8+x and YBa2Cu3O7−δ Physica C: Superconductivity. 306: 163-187. DOI: 10.1016/S0921-4534(98)00361-X |
0.429 |
|
| 1998 |
Hansen DM, Moran PD, Dunn KA, Babcock SE, Matyi RJ, Kuech TF. Development of a glass-bonded compliant substrate Journal of Crystal Growth. 195: 144-150. DOI: 10.1016/S0022-0248(98)00579-X |
0.425 |
|
| 1998 |
Tsu IF, Wang JL, Kaiser DL, Babcock SE. A comparison of grain boundary topography and dislocation network structure in bulk-scale [001] tilt bicrystals of Bi2Sr2CaCu2O8+x and YBa2Cu3O7-δ Physica C: Superconductivity and Its Applications. 306: 163-187. |
0.33 |
|
| 1997 |
Zhou M, Perkins NR, Rehder E, Kuech TF, Babcock SE. The Effect of Growth Temperature On The Microstructure of Movpe AlN/Si (111) Mrs Proceedings. 482. DOI: 10.1557/Proc-482-185 |
0.452 |
|
| 1997 |
Vargas J, Zhang N, Kaiser D, Babcock S. Systematic copper concentration variations along grain boundaries in bulk-scale YBa2Cu307−δ bicrystals Physica C: Superconductivity. 292: 1-16. DOI: 10.1016/S0921-4534(97)01688-2 |
0.405 |
|
| 1997 |
Zhou M, Perkins NR, Rehder E, Kuech TF, Babcock SE. Effect of growth temperature on the microstructure of MOVPE AlN/Si(111) Materials Research Society Symposium - Proceedings. 482: 185-190. |
0.341 |
|
| 1997 |
Dunn KA, Babcock SE, Vaudo R, Phanse V, Redwing J. Dislocation distribution and subgrain structure of GaN films deposited on sapphire by HVPE and MOVPE Materials Research Society Symposium - Proceedings. 482: 417-422. |
0.328 |
|
| 1997 |
Vargas JL, Zhang N, Kaiser DL, Babcock SE. Systematic copper concentration variations along grain boundaries in bulk-scale YBa2Cu3O7-δ bicrystals Physica C: Superconductivity and Its Applications. 292: 1-16. |
0.317 |
|
| 1996 |
Tsu I, Babcock SE, Kaiser D. Faceting, dislocation network structure, and various scales of heterogeneity in a YBa2Cu3O7−δ low-angle [001] tilt boundary Journal of Materials Research. 11: 1383-1397. DOI: 10.1557/Jmr.1996.0174 |
0.412 |
|
| 1996 |
Wang J, Tsu I, Cai XY, Kelley RJ, Vaudin MD, Babcock SE, Larbalestier DC. Electromagnetic and microstructural investigations of a naturally grown 8° [001] tilt bicrystal of Bi2Sr2CaCu208 + x Journal of Materials Research. 11: 868-877. DOI: 10.1557/Jmr.1996.0108 |
0.443 |
|
| 1996 |
Heinig NF, Redwing RD, Tsu IF, Gurevich A, Nordman JE, Babcock SE, Larbalestier DC. Evidence for channel conduction in low misorientation angle [001] tilt YBa2Cu3O7-x bicrystal films Applied Physics Letters. 69: 577-579. DOI: 10.1063/1.117758 |
0.381 |
|
| 1996 |
Tsu IF, Babcock SE, Kaiser DL. Faceting, dislocation network structure, and various scales of heterogeneity in a YBa2Cu3O7-δ low-angle [001] tilt boundary Journal of Materials Research. 11: 1383-1397. |
0.311 |
|
| 1996 |
Wang JL, Tsu IF, Cai XY, Kelley RJ, Vaudin MD, Babcock SE, Larbalestier DC. Electromagnetic and microstructural investigations of a naturally grown 8° [001] tilt bicrystal of Bi2Sr2CaCu2O8+x Journal of Materials Research. 11: 868-877. |
0.349 |
|
| 1995 |
Heinig NF, Redwing RD, Tsu IF, Gurevich A, Nordman JE, Babcock SE, Larbalestier DC. Evidence for channel conduction in low misorientation angle [001] tilt YBa2Cu3O7-x bicrystal films Applied Physics Letters. 577. |
0.304 |
|
| 1994 |
Wang JL, Cai XY, Kelley RJ, Vaudin MD, Babcock SE, Larbalestier DC. Electromagnetic coupling character of [001] twist boundaries in sintered Bi2Sr2CaCu2O8+x bicrystals Physica C: Superconductivity and Its Applications. 230: 189-198. DOI: 10.1016/0921-4534(94)90463-4 |
0.385 |
|
| 1994 |
Babcock SE, Cai XY, Larbalestier DC, Shin DH, Zhang N, Zhang H, Kaiser DL, Gao Y. A TEM-EELS study of hole concentrations near strongly and weakly coupled grain boundaries in electromagnetically characterized YBa2Cu3O7-δ bicrystals Physica C: Superconductivity and Its Applications. 227: 183-196. DOI: 10.1016/0921-4534(94)90372-7 |
0.415 |
|
| 1994 |
Babcock SE, Larbalestier DC. Bicrystal studies of high transition temperature superconductors Journal of Physics and Chemistry of Solids. 55: 1125-1136. DOI: 10.1016/0022-3697(94)90130-9 |
0.392 |
|
| 1993 |
Babcock SE, Cai X, Gao YF, Kaiser DL, Larbalestier DC, Merkle KL, Shin DH, Zhang H, Zhang N. Studies of Microstructure/Critical Current Density Relationships for Grain Boundaries in YBa2Cu3O7-δ Bicrystals Materials Science Forum. 745-748. DOI: 10.4028/Www.Scientific.Net/Msf.126-128.745 |
0.37 |
|
| 1993 |
Field MB, Cai XY, Babcock SE, Larbalestier DC. Transport Properties Across High-Angle Bicrystals of Melt-Textured YBa2Cu306+x Ieee Transactions On Applied Superconductivity. 3: 1479-1482. DOI: 10.1109/77.233615 |
0.414 |
|
| 1992 |
BABCOCK SE, ZHANG N, GAO Y, CAI XY, KAISER DL, LARBALESTIER DC, MERKLE KL. MICROSTRUCTURE AND COMPOSITION OF ELECTROMAGNETICALLY-CHARACTERIZED YBa2Cu3O7-δ GRAIN BOUNDARIES Journal of Advanced Science. 4: 119-124,f2. DOI: 10.2978/Jsas.4.119 |
0.4 |
|
| 1992 |
Feng Y, Larbalestier DC, Babcock SE, Vander Sande JB. (001) faceting and Bi2Sr2CuO6+x(T c=7-22 K) phase formation at the Ag/Bi-Sr-Ca-Cu-O interface in Ag-clad Bi2Sr2CaCu2O8+x(T c=75-95 K) superconducting tapes Applied Physics Letters. 61: 1234-1236. DOI: 10.1063/1.107605 |
0.332 |
|
| 1992 |
Feng Y, Hautanen KE, High YE, Larbalestier DC, Ray R, Hellstrom EE, Babcock SE. Microstructural analysis of high critical current density Ag-clad BiSrCaCuO (2:2:1:2) tapes Physica C: Superconductivity and Its Applications. 192: 293-305. DOI: 10.1016/0921-4534(92)90834-Y |
0.391 |
|
| 1991 |
Larbalestier DC, Babcock SE, Cai XY, Field MB, Gao Y, Heinig NF, Kaiser DL, Merkle K, Williams LK, Zhang N. Electrical transport across grain boundaries in bicrystals of YBa2Cu3O7δ Physica C: Superconductivity and Its Applications. 185: 315-320. DOI: 10.1016/0921-4534(91)91992-D |
0.41 |
|
| 1990 |
Babcock SE, Larbalestier DC. Observations and implications of grain boundary dislocation networks in high-angle YBa2Cu3O7−δ grain boundaries Journal of Materials Research. 5: 919-928. DOI: 10.1557/JMR.1990.0919 |
0.3 |
|
| 1990 |
Babcock SE, Cai XY, Kaiser DL, Larbalestier DC. Weak-link-free behaviour of high-angle YBa 2 Cu 3 O 7–δ grain boundaries in high magnetic fields Nature. 347: 167-169. DOI: 10.1038/347167A0 |
0.415 |
|
| 1990 |
Babcock SE, Cai XY, Kaiser DL, Larbalestier DC. Weak-link-free behaviour of high-angle YBa2Cu3O7-δ grain boundaries in high magnetic fields Nature. 347: 167-169. |
0.309 |
|
| 1989 |
Babcock SE, Larbalestier DC. Evidence for local composition variations within YBa2Cu 3O7-δ grain boundaries Applied Physics Letters. 55: 393-395. DOI: 10.1063/1.102422 |
0.399 |
|
| 1989 |
Babcock SE, Balluffi RW. Grain boundary kinetics-II. In situ observations of the role of grain boundary dislocations in high-angle boundary migration Acta Metallurgica. 37: 2367-2376. DOI: 10.1016/0001-6160(89)90034-5 |
0.394 |
|
| 1989 |
Babcock SE, Balluffi RW. Grain boundary kinetics-I. In situ observations of coupled grain boundary dislocation motion, crystal translation and boundary displacement Acta Metallurgica. 37: 2357-2365. DOI: 10.1016/0001-6160(89)90033-3 |
0.375 |
|
| 1988 |
Larbalestier DC, Babcock SE, Cai X, Daeumling M, Hampshire DP, Kelly TF, Lavanier LA, Lee PJ, Seuntjens J. Weak links and the poor transport critical currents of the 123 compounds Physica C: Superconductivity and Its Applications. 153: 1580-1585. DOI: 10.1016/0921-4534(88)90426-1 |
0.368 |
|
| 1988 |
Babcock SE, Kelly TF, Lee PJ, Seuntjens JM, Lavanier LA, Larbalestier DC. Investigation of composition variations near grain boundaries in high-quality sintered samples of YBa2Cu3O7-δ Physica C: Superconductivity and Its Applications. 152: 25-38. DOI: 10.1016/0921-4534(88)90070-6 |
0.444 |
|
| 1986 |
Babcock SE, Tu KN. Titanium-tungsten contacts to silicon. II. Stability against aluminum penetration Journal of Applied Physics. 59: 1599-1605. DOI: 10.1063/1.336470 |
0.383 |
|
| 1982 |
Babcock SE, Tu KN. Titanium-tungsten contacts to Si: The effects of alloying on Schottky contact and on silicide formation Journal of Applied Physics. 53: 6898-6905. DOI: 10.1063/1.330031 |
0.366 |
|
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