Year |
Citation |
Score |
2022 |
Khatoon S, Yadav SK, Singh J, Singh RB. Design of a CHNHPbI/CsPbI-based bilayer solar cell using device simulation. Heliyon. 8: e09941. PMID 35874084 DOI: 10.1016/j.heliyon.2022.e09941 |
0.317 |
|
2020 |
Bedi G, Venayagamoorthy GK, Singh R. Development of an IoT-Driven Building Environment for Prediction of Electric Energy Consumption Ieee Internet of Things Journal. 7: 4912-4921. DOI: 10.1109/Jiot.2020.2975847 |
0.347 |
|
2018 |
Bedi G, Venayagamoorthy GK, Singh R, Brooks RR, Wang K. Review of Internet of Things (IoT) in Electric Power and Energy Systems Ieee Internet of Things Journal. 5: 847-870. DOI: 10.1109/Jiot.2018.2802704 |
0.338 |
|
2016 |
Anderson TH, Faryad M, Mackay TG, Lakhtakia A, Singh R. Combined optical-electrical finite-element simulations of thin-film solar cells with homogeneous and nonhomogeneous intrinsic layers Journal of Photonics For Energy. 6. DOI: 10.1117/1.Jpe.6.025502 |
0.402 |
|
2016 |
Abdelhamid M, Pilla S, Singh R, Haque I, Filipi Z. A comprehensive optimized model for on-board solar photovoltaic system for plug-in electric vehicles: energy and economic impacts International Journal of Energy Research. 40: 1489-1508. DOI: 10.1002/Er.3534 |
0.683 |
|
2015 |
Asif AA, Singh R, Alapatt GF. Technical and economic assessment of perovskite solar cells for large scale manufacturing Journal of Renewable and Sustainable Energy. 7. DOI: 10.1063/1.4927329 |
0.771 |
|
2014 |
Singh R, Alapatt GF, Bedi G. Why and how photovoltaics will provide cheapest electricity in the 21st century Facta Universitatis. Series Electronics and Energetics. 27: 275-298. DOI: 10.2298/Fuee1402275S |
0.744 |
|
2014 |
Abdelhamid M, Singh R, Omar M. Review of microcrack detection techniques for silicon solar cells Ieee Journal of Photovoltaics. 4: 514-524. DOI: 10.1109/Jphotov.2013.2285622 |
0.683 |
|
2013 |
Gupta N, Singh R, Wu F, Narayan J, McMillen C, Alapatt GF, Poole KF, Hwu SJ, Sulejmanovic D, Young M, Teeter G, Ullal HS. Deposition and characterization of nanostructured Cu2O thin-film for potential photovoltaic applications Journal of Materials Research. 28: 1740-1746. DOI: 10.1557/Jmr.2013.150 |
0.763 |
|
2013 |
Singh R, Alapatt GF, Lakhtakia A. Making solar cells a reality in every home: Opportunities and challenges for photovoltaic device design Ieee Journal of the Electron Devices Society. 1: 129-144. DOI: 10.1109/Jeds.2013.2280887 |
0.785 |
|
2012 |
Alapatt GF, Singh R, Poole KF. Fundamental issues in manufacturing photovoltaic modules beyond the current generation of materials Advances in Optoelectronics. 2012. DOI: 10.1155/2012/782150 |
0.781 |
|
2012 |
Singh R, Alapatt GF. Innovative paths for providing green energy for sustainable global economic growth Proceedings of Spie - the International Society For Optical Engineering. 8482. DOI: 10.1117/12.928058 |
0.734 |
|
2011 |
Shishiyanu S, Singh R, Shishiyanu T, Asher S, Reedy R. The Mechanism of Enhanced Diffusion of Phosphorus in Silicon During Rapid Photothermal Processing of Solar Cells Ieee Transactions On Electron Devices. 58: 776-781. DOI: 10.1109/Ted.2010.2096511 |
0.379 |
|
2011 |
Gupta N, McMillen C, Singh R, Podila R, Rao AM, Hawkins T, Foy P, Morris S, Rice R, Poole KF, Zhu L, Ballato J. Annealing of silicon optical fibers Journal of Applied Physics. 110. DOI: 10.1063/1.3660270 |
0.486 |
|
2009 |
Singh R, Gupta N, Alapatt GF, Podila R, Poole KF. Prospects of nanostructure-based solar cells for manufacturing future generations of photovoltaic modules International Journal of Photoenergy. 2009. DOI: 10.1155/2009/154059 |
0.777 |
|
2009 |
Singh R. Why silicon is and will remain the dominant photovoltaic material Journal of Nanophotonics. 3: 32503-32503. DOI: 10.1117/1.3196882 |
0.461 |
|
2007 |
Venkateshan A, Singh R, Poole KF, Harriss J, Senter H, Teague R, Narayan J. High-κ gate dielectrics with ultra-low leakage current for sub-45nm CMOS Electronics Letters. 43: 1130-1132. DOI: 10.1049/El:20072178 |
0.751 |
|
2005 |
Damjanovic D, Singh R, Poole KF. In situ fabrication of metal gate/high- κ dielectric gate stacks using a potential lower cost front-end process for the sub-90 nm CMOS technology node Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 437-442. DOI: 10.1116/1.1865115 |
0.431 |
|
2005 |
Damjanovic D, Bolla HK, Singh R, Poole KF, Senter HF, Narayan J. Effect of UV/VUV enhanced RTP on process variation and device performance of metal gate/high-κ gate stacks for the Sub-90-nm CMOS regime Ieee Transactions On Semiconductor Manufacturing. 18: 55-61. DOI: 10.1109/Tsm.2004.841823 |
0.444 |
|
2004 |
Fakhruddin M, Singh R, Poole KF, Kondapi SV, Narayan J. The effect of interfacial layers on high-performance gate dielectrics processed by RTP-ALD Journal of the Electrochemical Society. 151: G507-G511. DOI: 10.1149/1.1768132 |
0.751 |
|
2003 |
Singh R, Fakhruddin M, Poole KF. The impact of single-wafer processing on semiconductor manufacturing Ieee Transactions On Semiconductor Manufacturing. 16: 96-101. DOI: 10.1109/Tsm.2003.810941 |
0.765 |
|
2000 |
Parihar V, Singh R, Sharangpani R, Russell SD, Young CA. Effect of vacuum ultraviolet radiation on the gap fill properties of Teflon amorphous fluoropolymer film deposited by direct liquid injection Ieee Transactions On Electron Devices. 47: 1463-1465. DOI: 10.1109/16.848292 |
0.362 |
|
2000 |
Singh R, Fakhruddin M, Poole KF. Rapid photothermal processing as a semiconductor manufacturing technology for the 21st century Applied Surface Science. 168: 198-203. DOI: 10.1016/S0169-4332(00)00590-0 |
0.772 |
|
1999 |
Chen Y, Singh R, Rajan K, Dumin DJ, DeBoer S, Thakur RPS. A study of rapid photothermal annealing on the electrical properties and reliability of tantalum pentoxide Ieee Transactions On Electron Devices. 46: 814-816. DOI: 10.1109/16.753723 |
0.374 |
|
1999 |
Venkataraman S, Singh R, Parihar V, Poole KF, Rohatgi A, Yeludur V, Ebong A. A study of the effect of ultraviolet (UV) and vacuum ultraviolet (VUV) photons on the minority carrier lifetime of single crystal silicon processed by rapid thermal and rapid photothermal processing Journal of Electronic Materials. 28: 1394-1398. DOI: 10.1007/S11664-999-0128-5 |
0.407 |
|
1998 |
Parihar V, Singh R. Process Integration issues for Interlevel Dielectric Materials for Sub-quarter Micron Silicon Integrated Circuits Mrs Proceedings. 511: 241. DOI: 10.1557/Proc-511-241 |
0.361 |
|
1998 |
Sharangpani R, Singh R. Role of rapid photothermal processing in environmentally conscious semiconductor manufacturing Journal of Materials Research. 13: 61-67. DOI: 10.1557/Jmr.1998.0009 |
0.377 |
|
1998 |
Singh R, Vedagarbha V, Nimmagadda SV, Narayanan S. Comparative study of back surface field contact formation using different lamp configurations in rapid thermal processing Journal of Vacuum Science & Technology B. 16: 613-618. DOI: 10.1116/1.589872 |
0.411 |
|
1998 |
Singh R, Nimmagadda SV, Parihar V, Chen Y, Poole KF. Role of rapid photothermal processing in process integration Ieee Transactions On Electron Devices. 45: 643-654. DOI: 10.1109/16.661226 |
0.463 |
|
1998 |
Singh R, Parihar V, Venkataraman S, Poole K, Thakur R, Rohatgi A. Changing from rapid thermal processing to rapid photothermal processing: what does it buy for a particular technology? Materials Science in Semiconductor Processing. 1: 219-230. DOI: 10.1016/S1369-8001(98)00042-0 |
0.447 |
|
1998 |
Singh R, Vedula L, Gong C. Dependence of activation energy of mass transport limited region on the photospectrum of photons participating in rapid photothermal assisted chemical vapor deposition Journal of Electronic Materials. 27: L13-L16. DOI: 10.1007/S11664-998-0206-0 |
0.402 |
|
1998 |
Ratakonda D, Singh R, Vendula L, Narayanan S. Ohmic contacts formation of silicon Schottky diodes by screen printing and rapid isothermal processing Journal of Electronic Materials. 27: 402-404. DOI: 10.1007/S11664-998-0167-3 |
0.394 |
|
1997 |
Vedagarbha V, Singh R, Ratakonda D, Vedula L, Rohatgi A, Narayanan S. Exploitation of Quantum Photoeffects in Reducing Microscopic Defects and Processing Cycle Time in Advanced Rapid Thermal Processing Mrs Proceedings. 470. DOI: 10.1557/Proc-470-425 |
0.432 |
|
1997 |
Thakur RPS, DeBoer SJ, Singh R. Enabling Thermal Processing of High and Low Dielectric Constant Materials Mrs Proceedings. 470: 369. DOI: 10.1557/Proc-470-369 |
0.357 |
|
1997 |
Chen Y, Singh R, DeBoer S, Thakur RPS. High Performance High Dielectric Constant Films Deposited by Dual Spectral Source Rapid Isothermal Assisted Metalorganic Chemical Vapor Deposition (MOCVD) Mrs Proceedings. 470. DOI: 10.1557/Proc-470-133 |
0.386 |
|
1997 |
Vedula L, Singh R, Ratakonda D, Rohatgi A, Narayanan S. Defect Reduction and Improved Device Performance using Rapid Isothermal Diffusion in Silicon Mrs Proceedings. 469. DOI: 10.1557/Proc-469-437 |
0.381 |
|
1997 |
Sharangpani R, Cherukuri KC, Singh R. Importance of high energy photons in the curing of spin-on low dielectric constant interconnect materials Journal of the Electrochemical Society. 144: 669-673. DOI: 10.1149/1.1837465 |
0.39 |
|
1997 |
Sharangpani R, Singh R, Drews M, Ivey K. Chemical vapor deposition and characterization of amorphous Teflon fluoropolymer thin films Journal of Electronic Materials. 26: 402-409. DOI: 10.1007/S11664-997-0110-Z |
0.405 |
|
1997 |
Chen Y, Singh R, Narayan J. Deposition of tantalum oxide films by dual spectral source assisted metalorganic chemical vapor deposition (MOCVD) Journal of Electronic Materials. 26: 350-354. DOI: 10.1007/S11664-997-0100-1 |
0.367 |
|
1997 |
Singh R, Cherukuri KC, Vedula L, Rohatgi A, Mejia J, Narayanan S. Enhanced diffusion and improved device performance using dual spectral source rapid thermal processing Journal of Electronic Materials. 26: 1422-1427. DOI: 10.1007/S11664-997-0061-4 |
0.407 |
|
1997 |
Singh R, Chen Y. Role of high energy photons in dual spectral source rapid isothermal CVD Journal of Electronic Materials. 26: 1184-1188. DOI: 10.1007/S11664-997-0017-8 |
0.447 |
|
1996 |
Singh R, Sharangpani R, Cherukuri KC, Chen Y, Dawson DM, Poole KF, Rohatgi A, Narayanan S, Thakur RPS. How Rapid Isothermal Processing Can be a Dominant Semiconductor Processing Technology in the 21st Century Mrs Proceedings. 429. DOI: 10.1557/Proc-429-81 |
0.468 |
|
1996 |
Sharangpani R, Cherukuri KC, Singh R. Low thermal budget processing of organic dielectrics Ieee Transactions On Electron Devices. 43: 1168-1170. DOI: 10.1109/16.502430 |
0.4 |
|
1995 |
Sharangpani R, Singh R, Cherukuri KC, Thakur RPS. Low Thermal Budget Processing Of Organic Dielectrics Mrs Proceedings. 381. DOI: 10.1557/Proc-381-117 |
0.326 |
|
1994 |
Singh R, Mavoori J, Thakur RPS, Narayanan S. Importance of the Photoeffects in Rapid Isothermal Processing (RIP) Mrs Proceedings. 342: 437. DOI: 10.1557/Proc-342-437 |
0.318 |
|
1994 |
Mavoori J, Singh R, Sharangpani R, Gong C, Poole KF, Singh RK, Natarajan R. Deposition of Oxide Based Advanced Electronic and Optical Materials by Rapid Isothermal Processing (RIP) Assisted Metalorganic Chemical Vapor Deposition (MOCVD) Mrs Proceedings. 342. DOI: 10.1557/Proc-342-201 |
0.347 |
|
1991 |
Singh R, Sinha S, Thakur RPS, Hsu NJ. Role of Photoeffects in Integrated Rapid Isothermal Processing Mrs Proceedings. 224. DOI: 10.1557/Proc-224-197 |
0.316 |
|
1991 |
Chaudhuri J, Hashmi F, Singh R, Thakur RPS. X-RAY Double Crystal Analysis of Structure and Stress Relaxation in Solid Phase Epitaxial CaF 2 and Ge/CaF 2 Films on (111) Si by in Situ Rapid Isothermal Processing Mrs Proceedings. 221: 199. DOI: 10.1557/Proc-221-199 |
0.313 |
|
1991 |
Singh R, Thakur RPS. Role of In-Situ Rapid Isothermal Processing in the Advanced Metallizations Iete Journal of Research. 37: 219-223. DOI: 10.1080/03772063.1991.11436959 |
0.389 |
|
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