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Geonwook Yoo, Ph.D. - Publications

Affiliations: 
2011 University of Michigan, Ann Arbor, Ann Arbor, MI 
Area:
Electronics and Electrical Engineering
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36 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Yeom MJ, Yang JY, Lee CH, Heo J, Chung RBK, Yoo G. Low Subthreshold Slope AlGaN/GaN MOS-HEMT with Spike-Annealed HfO Gate Dielectric. Micromachines. 12. PMID 34945290 DOI: 10.3390/mi12121441  0.328
2020 Ma J, Yoo G. Electrical Properties of Top-Gate -Ga₂O₃ Nanomembrane Metal-Semiconductor Field-Effect Transistor. Journal of Nanoscience and Nanotechnology. 20: 516-519. PMID 31383202 DOI: 10.1166/Jnn.2020.17259  0.443
2020 Park JY, Jeon H, Park N, Yoo G, Han CJ, Oh MS, Ju BK, Kim Ys. Design of Transparent Multicolor LED Signage with an Oxide-Metal-Oxide Interconnect Electrode Journal of the Korean Physical Society. 77: 82-86. DOI: 10.3938/Jkps.77.82  0.333
2020 Park TH, Yang JY, Ma J, Yoo G. Impact of ALD HfO 2 Gate-Oxide Geometries on the Electrical Properties and Single-Event Effects of β-Ga 2 O 3 MOSFETs: A Simulation Study Journal of the Korean Physical Society. 77: 317-322. DOI: 10.3938/Jkps.77.317  0.421
2020 Yang JY, Ma J, Yoo G. ALD grown polycrystalline HfO2 dielectric layer on (−2 0 1) β-Ga2O3 for MOS capacitors Results in Physics. 17: 103119. DOI: 10.1016/J.Rinp.2020.103119  0.31
2019 Ma J, Yoo G. Surface depletion effect on negative bias stress instability of β-Ga2O3 (100) nanomembrane FETs Japanese Journal of Applied Physics. 58. DOI: 10.7567/1347-4065/Aaf7Fc  0.412
2019 Jo S, Yoo G, Heo J. Modeling and Simulation Study of Reduced Self-Heating in Bottom-Gate β-Ga2O3 MISFETs with a h-BN Gate Insulator Journal of the Korean Physical Society. 74: 1171-1175. DOI: 10.3938/Jkps.74.1171  0.37
2019 Ma J, Yoo G. Low Subthreshold Swing Double-Gate $\beta$ -Ga2O3 Field-Effect Transistors With Polycrystalline Hafnium Oxide Dielectrics Ieee Electron Device Letters. 40: 1317-1320. DOI: 10.1109/Led.2019.2924680  0.441
2019 Ma J, Lee O, Yoo G. Effect of Al 2 O 3 Passivation on Electrical Properties of $\beta$ -Ga 2 O 3 Field-Effect Transistor Ieee Journal of the Electron Devices Society. 7: 512-516. DOI: 10.1109/Jeds.2019.2912186  0.408
2018 Ma J, Yoo G. Thickness-Dependent Electrical Properties of MoS₂ Field-Effect Transistors Fabricated on Sol-Gel Prepared AlO Layer. Journal of Nanoscience and Nanotechnology. 18: 5986-5990. PMID 29677729 DOI: 10.1166/Jnn.2018.15588  0.469
2018 Ma J, Yoo G. Effects of Various Passivation Layers on Electrical Properties of Multilayer MoS₂ Transistors. Journal of Nanoscience and Nanotechnology. 18: 5982-5985. PMID 29677728 DOI: 10.1166/Jnn.2018.15586  0.434
2018 Yoo G, Ma J, Park Y, Kim SH, Joo YW, Heo J, Oh MS. Threshold Voltage Tuning in Multilayer MoS2 Transistors via Fluorine-Based Plasma Treatment Science of Advanced Materials. 10: 1427-1430. DOI: 10.1166/Sam.2018.3346  0.313
2018 Yoo G, Ma J. The Effects of Fluoropolymer Gate-Dielectric on the Air Stability of MoS2 Field-Effect Transistors Science of Advanced Materials. 10: 181-184. DOI: 10.1166/Sam.2018.3221  0.345
2018 Ma J, Lee O, Yoo G. Abnormal Bias-Temperature Stress and Thermal Instability of $\beta$ -Ga 2 O 3 Nanomembrane Field-Effect Transistor Ieee Journal of the Electron Devices Society. 6: 1124-1128. DOI: 10.1109/Jeds.2018.2868905  0.42
2018 Ma J, Choi K, Kim SH, Lee H, Yoo G. All polymer encapsulated, highly-sensitive MoS2 phototransistors on flexible PAR substrate Applied Physics Letters. 113: 13102. DOI: 10.1063/1.5036556  0.414
2017 Park H, Han GC, Lee SW, Lee H, Jeong SH, Naqi M, AlMutairi A, Kim YJ, Lee J, Kim WJ, Kim S, Yoon Y, Yoo G. Label-free and recalibrated multilayer MoS2 biosensor for point-of-care diagnostics. Acs Applied Materials & Interfaces. PMID 29171259 DOI: 10.1021/Acsami.7B14479  0.335
2017 Park J, Park Y, Yoo G, Heo J. Bias-dependent photoresponsivity of multi-layer MoS2 phototransistors. Nanoscale Research Letters. 12: 599. PMID 29164338 DOI: 10.1186/S11671-017-2368-2  0.364
2017 Yoo G, Choi SL, Park SJ, Lee KT, Lee S, Oh MS, Heo J, Park HJ. Flexible and Wavelength-Selective MoS2 Phototransistors with Monolithically Integrated Transmission Color Filters. Scientific Reports. 7: 40945. PMID 28098252 DOI: 10.1038/Srep40945  0.333
2017 Lee S, Park Y, Yoo G, Heo J. Wavelength-selective enhancement of photo-responsivity in metal-gated multi-layer MoS2 phototransistors Applied Physics Letters. 111: 223106. DOI: 10.1063/1.5003315  0.334
2017 Yoo G, Hong S, Heo J, Kim S. Enhanced photoresponsivity of multilayer MoS2 transistors using high work function MoOx overlayer Applied Physics Letters. 110: 053112. DOI: 10.1063/1.4975626  0.452
2017 Vikraman D, Akbar K, Hussain S, Yoo G, Jang J, Chun S, Jung J, Park HJ. Direct synthesis of thickness-tunable MoS2 quantum dot thin layers: Optical, structural and electrical properties and their application to hydrogen evolution Nano Energy. 35: 101-114. DOI: 10.1016/J.Nanoen.2017.03.031  0.371
2017 Hong S, Yoo G, Kim DH, Song WG, Le OK, Hong YK, Takahashi K, Omkaram I, Son DN, Kim S. The doping mechanism and electrical performance of polyethylenimine‐doped MoS­2 transistor Physica Status Solidi (C). 14. DOI: 10.1002/Pssc.201600262  0.36
2016 Yoo G, Park Y, Sang P, Baac HW, Heo J. High-frequency optoacoustic transmitter based on nanostructured germanium via metal-assisted chemical etching Optical Materials Express. 6: 2567-2572. DOI: 10.1364/Ome.6.002567  0.33
2016 Lim W, Kum H, Choi YJ, Sim SH, Yeon JH, Kim JS, Seong HK, Cha NG, Kim YI, Park YS, Yoo G, Pearton SJ. SiO2 nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4959027  0.358
2016 Yoo G, Choi SL, Lee S, Yoo B, Kim S, Oh MS. Enhancement-mode operation of multilayer MoS2 transistors with a fluoropolymer gate dielectric layer Applied Physics Letters. 108. DOI: 10.1063/1.4955024  0.443
2016 Hong YK, Yoo G, Kwon J, Hong S, Song WG, Liu N, Omkaram I, Yoo B, Ju S, Kim S, Oh MS. High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics Aip Advances. 6. DOI: 10.1063/1.4953062  0.437
2016 Park Y, Baac HW, Heo J, Yoo G. Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors Applied Physics Letters. 108: 083102. DOI: 10.1063/1.4942406  0.39
2016 Yoo G, Park H, Kim M, Song WG, Jeong S, Kim MH, Lee H, Lee SW, Hong YK, Lee MG, Lee S, Kim S. Real-time electrical detection of epidermal skin MoS2 biosensor for point-of-care diagnostics Nano Research. 10: 767-775. DOI: 10.1007/S12274-016-1289-1  0.313
2016 Yoo G, Choi SL, Yoo B, Oh MS. Solution-processed high-k oxide dielectric via deep ultraviolet and rapid thermal annealing for high-performance MoS2 FETs Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/Pssa.201600619  0.426
2015 Yoo G, Lee S, Yoo B, Han C, Kim S, Oh MS. Electrical Contact Analysis of Multilayer MoS2 Transistor with Molybdenum Source/Drain Electrodes Ieee Electron Device Letters. 36: 1215-1218. DOI: 10.1109/Led.2015.2478899  0.401
2015 Kwon J, Hong S, Hong YK, Lee S, Yoo G, Yoon Y, Kim S. Photosensitivity enhancement in hydrogenated amorphous silicon thin-film phototransistors with gate underlap Applied Physics Letters. 107. DOI: 10.1063/1.4935979  0.457
2011 Yoo G, Radtke D, Baek G, Zeitner UD, Kanicki J. Electrical instability of the a-Si:H TFTs fabricated by maskless laser-write lithography on a spherical surface Ieee Transactions On Electron Devices. 58: 160-164. DOI: 10.1109/Ted.2010.2088403  0.589
2010 Yoo G, Lee H, Kanicki J. Electrical stability of hexagonal a-Si:H TFTs Ieee Electron Device Letters. 31: 53-55. DOI: 10.1109/LED.2009.2034760  0.539
2010 Yoo G, Fung Tc, Radtke D, Stumpf M, Zeitner U, Kanicki J. Hemispherical thin-film transistor passive pixel sensors Sensors and Actuators, a: Physical. 158: 280-283. DOI: 10.1016/J.Sna.2009.11.019  0.514
2010 Yoo G, Lee H, Radtke D, Stumpf M, Zeitner U, Kanicki J. A maskless laser-write lithography processing of thin-film transistors on a hemispherical surface Microelectronic Engineering. 87: 83-87. DOI: 10.1016/J.Mee.2009.05.032  0.585
2009 Lee H, Yoo G, Yoo JS, Kanicki J. Asymmetric electrical properties of fork a-Si:H thin-film transistor and its application to flat panel displays Journal of Applied Physics. 105. DOI: 10.1063/1.3153968  0.589
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