| Year |
Citation |
Score |
| 2023 |
Pflüger M, Brunner D, Heuser T, Lott JA, Reitzenstein S, Fischer I. Injection locking and coupling the emitters of large VCSEL arrays via diffraction in an external cavity. Optics Express. 31: 8704-8713. PMID 36859980 DOI: 10.1364/OE.473449 |
0.307 |
|
| 2020 |
Czyszanowski T, Gębski M, Pruszyńska-Karbownik E, Wasiak M, Lott JA. Monolithic high-contrast grating planar microcavities Nanophotonics. 9: 913-925. DOI: 10.1515/nanoph-2019-0520 |
0.355 |
|
| 2020 |
Gębski M, Wong P-, Riaziat M, Lott JA. 30 GHz bandwidth temperature stable 980 nm vertical-cavity surface-emitting lasers with AlAs/GaAs bottom distributed Bragg reflectors for optical data communication Journal of Physics: Photonics. 2: 035008. DOI: 10.1088/2515-7647/ab9420 |
0.341 |
|
| 2019 |
Gębski M, Lott JA, Czyszanowski T. Electrically injected VCSEL with a composite DBR and MHCG reflector. Optics Express. 27: 7139-7146. PMID 30876284 DOI: 10.1364/OE.27.007139 |
0.41 |
|
| 2019 |
Marigo-Lombart L, Rumeau A, Viallon C, Arnoult A, Calvez S, Monmayrant A, Gauthier-Lafaye O, Rosales R, Lott J, Thienpont H, Panajotov K, Almuneau G. High frequency operation of an integrated electro-absorption modulator onto a vertical-cavity surface-emitting laser Journal of Physics: Photonics. 1: 02LT01. DOI: 10.1088/2515-7647/AAF5AF |
0.311 |
|
| 2018 |
Marciniak M, Piskorski L, Gebski M, Dems M, Wasiak M, Panajotov K, Lott JA, Czyszanowski T. The Vertical-Cavity Surface-Emitting Laser as a Sensing Device Journal of Lightwave Technology. 36: 3185-3192. DOI: 10.1109/JLT.2018.2834620 |
0.355 |
|
| 2016 |
Larisch G, Moser P, Lott JA, Bimberg D. Correlation of photon lifetime and maximum bit rate for 55 Gbit/s energy-efficient 980 nm VCSELs 5th Ieee Photonics Society Optical Interconnects Conference, Oi 2016. 16-17. DOI: 10.1109/OIC.2016.7482995 |
0.31 |
|
| 2016 |
Larisch G, Moser P, Lott JA, Bimberg D. Impact of Photon Lifetime on the Temperature Stability of 50 Gb/s 980 nm VCSELs Ieee Photonics Technology Letters. 28: 2327-2330. DOI: 10.1109/LPT.2016.2592985 |
0.314 |
|
| 2016 |
Gebski M, Marciniak M, Dems M, Wasiak M, Lott JA, Czyszanowski T. Monolithic high-index-contrast grating VCSELs Proceedings - 2016 International Conference Laser Optics, Lo 2016. R315. DOI: 10.1109/LO.2016.7549725 |
0.317 |
|
| 2015 |
Maleev NA, Blokhin SA, Bobrov MA, Kuzmenkov AG, Blokhin AA, Moser P, Lott JA, Bimberg D, Ustinov VM. Study of high-speed semiconductor VCSELs based on AlInGaAs heterostructures with large gain-cavity detuning Semiconductors. 49: 88-91. DOI: 10.1134/S1063782615010170 |
0.355 |
|
| 2015 |
Blokhin SA, Bobrov MA, Maleev NA, Kuzmenkov AG, Sakharov AV, Blokhin AA, Moser P, Lott JA, Bimberg D, Ustinov VM. Impact of a large negative gain-to-cavity wavelength detuning on the performance of InGaAlAs oxide-confined vertical-cavity surface-emitting lasers Proceedings of Spie - the International Society For Optical Engineering. 9381. DOI: 10.1117/12.2080942 |
0.38 |
|
| 2015 |
Gębski M, Dems M, Wasiak M, Sarzała RP, Lott JA, Czyszanowski T. Double high refractive-index contrast grating VCSEL Proceedings of Spie - the International Society For Optical Engineering. 9381. DOI: 10.1117/12.2079328 |
0.342 |
|
| 2015 |
Moser P, Volwahsen M, Larisch G, Lott JA, Bimberg D. Maximizing the temperature insensitivity, energy efficiency, and bit rate of 980-nm VCSELs via small oxide-aperture diameters and photon lifetime tuning Proceedings of Spie - the International Society For Optical Engineering. 9381. DOI: 10.1117/12.2077771 |
0.316 |
|
| 2015 |
Wolf P, Li H, Moser P, Larisch G, Lott JA, Bimberg D. Extraction and analysis of high frequency response and impedance of 980 nm VCSELs as a function of temperature and oxide aperture diameter Proceedings of Spie - the International Society For Optical Engineering. 9381. DOI: 10.1117/12.2077182 |
0.306 |
|
| 2015 |
Gebski M, Dems M, Wasiak M, Lott JA, Czyszanowski T. Monolithic Subwavelength High-Index-Contrast Grating VCSEL Ieee Photonics Technology Letters. 27: 1953-1956. DOI: 10.1109/LPT.2015.2447932 |
0.356 |
|
| 2015 |
Moser P, Lott JA, Larisch G, Bimberg D. Impact of the oxide-aperture diameter on the energy efficiency, bandwidth, and temperature stability of 980-nm VCSELs Journal of Lightwave Technology. 33: 825-831. DOI: 10.1109/JLT.2014.2365237 |
0.339 |
|
| 2014 |
Li H, Moser P, Wolf P, Larisch G, Frasunkiewicz L, Dems M, Czyszanowski T, Lott JA, Bimberg D. Energy efficiency, bit rate, and modal properties of 980 nm VCSELs for very-short-reach optical interconnects Proceedings of Spie - the International Society For Optical Engineering. 9001. DOI: 10.1117/12.2045780 |
0.321 |
|
| 2014 |
Blokhin SA, Bobrov MA, Maleev NA, Kuzmenkov AG, Sakharov AV, Blokhin AA, Moser P, Lott JA, Bimberg D, Ustinov VM. Anomalous lasing of high-speed 850 nm InGaAlAs oxide-confined vertical-cavity surface-emitting lasers with a large negative gain-to-cavity wavelength detuning Applied Physics Letters. 105. DOI: 10.1063/1.4892885 |
0.463 |
|
| 2014 |
Li H, Wolf P, Moser P, Larisch G, Mutig A, Lott JA, Bimberg D. Energy-efficient and temperature-stable oxide-confined 980 nm VCSELs operating error-free at 38 Gbit/s at 85°C Electronics Letters. 50: 103-105. DOI: 10.1049/El.2013.3941 |
0.384 |
|
| 2014 |
Lott JA, Moser P, Bimberg D. Efficient emitters for computer interconnects: Tutorial Asia Communications and Photonics Conference, Acpc 2014. |
0.313 |
|
| 2013 |
Tan MP, Fryslie STM, Lott JA, Ledentsov NN, Bimberg D, Choquette KD. Error-free transmission over 1-km OM4 multimode fiber at 25 Gb/s using a single mode photonic crystal vertical-cavity surface-emitting laser Ieee Photonics Technology Letters. 25: 1823-1825. DOI: 10.1109/Lpt.2013.2275351 |
0.358 |
|
| 2013 |
Moser P, Lott JA, Bimberg D. Energy efficiency of directly modulated oxide-confined high bit rate 850-nm VCSELs for optical interconnects Ieee Journal On Selected Topics in Quantum Electronics. 19. DOI: 10.1109/JSTQE.2013.2255266 |
0.346 |
|
| 2013 |
Moser P, Lott JA, Wolf P, Larisch G, Payusov A, Ledentsov NN, Bimberg D. Energy-efficient oxide-confined 850-nm VCSELs for long-distance multimode fiber optical interconnects Ieee Journal On Selected Topics in Quantum Electronics. 19. DOI: 10.1109/Jstqe.2012.2218795 |
0.388 |
|
| 2013 |
Karachinsky LY, Blokhin SA, Novikov II, Maleev NA, Kuzmenkov AG, Bobrov MA, Lott JA, Ledentsov NN, Shchukin VA, Kropp JR, Bimberg D. Reliability performance of 25 Gbit s-1 850 nm vertical-cavity surface-emitting lasers Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/6/065010 |
0.323 |
|
| 2012 |
Moser P, Lott JA, Wolf P, Larisch G, Payusov A, Fiol G, Ledentsov NN, Hofmann W, Bimberg D. Energy-efficient vertical-cavity surface-emitting lasers (VCSELs) for "green" data and computer communication Proceedings of Spie - the International Society For Optical Engineering. 8276. DOI: 10.1117/12.906856 |
0.321 |
|
| 2012 |
Shchukin V, Lott J, Ledentsov N. Passive cavity surface-emitting and edge-emitting lasers: Physics, design, modeling Proceedings of Spie - the International Society For Optical Engineering. 8255. DOI: 10.1117/12.902645 |
0.382 |
|
| 2012 |
Ledentsov NN, Lott JA, Kropp JR, Shchukin VA, Bimberg D, Moser P, Fiol G, Payusov AS, Molin D, Kuyt G, Amezcua A, Karachinsky LY, Blokhin SA, Novikov II, Maleev NA, et al. Progress on single mode VCSELs for data- and tele-communications Proceedings of Spie - the International Society For Optical Engineering. 8276. DOI: 10.1117/12.902643 |
0.339 |
|
| 2012 |
Hofmann W, Moser P, Wolf P, Larisch G, Li H, Li W, Lott J, Bimberg D. VCSELs for exascale computing, computer farms, and green photonics Proceedings of Spie - the International Society For Optical Engineering. 8552. DOI: 10.1117/12.2006273 |
0.335 |
|
| 2012 |
Moser P, Lott JA, Wolf P, Larisch G, Ledentsov NN, Bimberg D. 25 Gb/s operation of oxide-confined 850-nm VCSELs with ultralow 56 fJ dissipated power per bit Conference Digest - Ieee International Semiconductor Laser Conference. 157-158. DOI: 10.1109/ISLC.2012.6348382 |
0.335 |
|
| 2012 |
Tan MP, Fryslie ST, Lott JA, Ledentov NN, Choquette KD. Single mode photonic crystal vertical cavity surface emitting lasers with modulation bandwidth > 13 GHz at low current density 2012 Ieee Photonics Conference, Ipc 2012. 463-464. DOI: 10.1109/IPCon.2012.6358693 |
0.311 |
|
| 2012 |
Moser P, Lott JA, Wolf P, Larisch G, Li H, Ledentsov NN, Bimberg D. 56fJ dissipated energy per bit of oxide-confined 850nm VCSELs operating at 25Gbit/s Electronics Letters. 48: 1292-1294. DOI: 10.1049/El.2012.2944 |
0.413 |
|
| 2012 |
Lott JA, Payusov AS, Blokhin SA, Moser P, Ledentsov NN, Bimberg D. Arrays of 850 nm photodiodes and vertical cavity surface emitting lasers for 25 to 40 Gbit/s optical interconnects Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 290-293. DOI: 10.1002/Pssc.201100315 |
0.419 |
|
| 2011 |
Ledentsov NN, Lott JA. New-generation vertically emitting lasers as a key factor in the computer communication era Physics-Uspekhi. 54: 853-858. DOI: 10.3367/Ufne.0181.201108H.0884 |
0.497 |
|
| 2011 |
Maleev NA, Kuzmenkov AG, Shulenkov AS, Blokhin SA, Kulagina MM, Zadiranov YM, Tikhomirov VG, Gladyshev AG, Nadtochiy AM, Nikitina EV, Lott JA, Svede-Shvets VN, Ledentsov NN, Ustinov VM. Matrices of 960-nm vertical-cavity surface-emitting lasers Semiconductors. 45: 818-821. DOI: 10.1134/S1063782611060133 |
0.446 |
|
| 2011 |
Nadtochiy AM, Blokhin SA, Mutig A, Lott JA, Ledentsov NN, Karachinskiy LY, Maximov MV, Ustinov VM, Bimber D. Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions Semiconductors. 45: 679-684. DOI: 10.1134/S1063782611050216 |
0.449 |
|
| 2011 |
Mutig A, Moser P, Lott JA, Wolf P, Hofmann W, Ledentsov NN, Bimberg D. High-speed 850 and 980 nm VCSELs for high-performance computing applications Proceedings of Spie - the International Society For Optical Engineering. 8308. DOI: 10.1117/12.903698 |
0.309 |
|
| 2011 |
Ledentsov NN, Lott JA, Bimberg D, Mutig A, Fiol G, Blokhin SA, Nadtochiy AM, Shchukin VA, Kropp J, Novikov II, Karachinsky LY, Maximov MV. High-speed single-mode quantum dot and quantum well VCSELs Proceedings of Spie - the International Society For Optical Engineering. 7952. DOI: 10.1117/12.880404 |
0.355 |
|
| 2011 |
Crisp MJ, Qureshi Z, Ingham JD, Penty RV, White IH, Ledentsov NN, Lott JA. Analogue modulation performance of 20 GHz vertical cavity surface emitting lasers for radio over fiber applications Proceedings of Spie - the International Society For Optical Engineering. 7933. DOI: 10.1117/12.877361 |
0.318 |
|
| 2011 |
Mutig A, Lott JA, Blokhin SA, Moser P, Wolf P, Hofmann W, Nadtochiy AM, Bimberg D. High-speed highly temperature stable 980 nm VCSELs operating at 25 Gb/s at up to 85°C for short reach optical interconnects Proceedings of Spie - the International Society For Optical Engineering. 7952. DOI: 10.1117/12.876156 |
0.323 |
|
| 2011 |
Kasten AM, Brown SN, Lott JA, Shchukin VA, Ledentsov NN, Choquette KD. Passive vertical cavity surface emitting lasers Ieee Photonic Society 24th Annual Meeting, Pho 2011. 919-920. DOI: 10.1109/Pho.2011.6110859 |
0.407 |
|
| 2011 |
Mutig A, Lott JA, Blokhin SA, Moser P, Wolf P, Hofmann W, Nadtochiy AM, Bimberg D. Modulation characteristics of high-speed and high-temperature stable 980 nm range VCSELs operating error free at 25 Gbit/s up to 85°C Ieee Journal On Selected Topics in Quantum Electronics. 17: 1568-1575. DOI: 10.1109/Jstqe.2010.2098851 |
0.395 |
|
| 2011 |
Moser P, Hofmann W, Wolf P, Lott JA, Larisch G, Payusov A, Ledentsov NN, Bimberg D. 81 fJ/bit energy-to-data ratio of 850 nm vertical-cavity surface-emitting lasers for optical interconnects Applied Physics Letters. 98. DOI: 10.1063/1.3597799 |
0.432 |
|
| 2011 |
Fiol G, Lott JA, Ledentsov NN, Bimberg D. Multimode optical fibre communication at 25Gbit/s over 300m with small spectral-width 850nm VCSELs Electronics Letters. 47: 810-811. DOI: 10.1049/El.2011.1148 |
0.367 |
|
| 2011 |
Lott JA, Shchukin VA, Ledentsov NN, Kasten AM, Choquette KD. Passive cavity surface emitting laser Electronics Letters. 47: 717-719. DOI: 10.1049/El.2011.0955 |
0.459 |
|
| 2010 |
Moser P, Mutig A, Lott JA, Blokhin S, Fiol G, Nadtochiy AM, Ledentsov NN, Bimberg D. Oxide confined 850 nm VCSELs for high speed datacom applications Proceedings of Spie - the International Society For Optical Engineering. 7720. DOI: 10.1117/12.854276 |
0.304 |
|
| 2010 |
Mutig A, Blokhin S, Nadtochiy AM, Fiol G, Lott JA, Shchukin VA, Ledenstov NN, Bimberg D. High-speed 850 nm oxide-confined VCSELs for DATACOM applications Proceedings of Spie - the International Society For Optical Engineering. 7615. DOI: 10.1117/12.840950 |
0.313 |
|
| 2010 |
Mutig A, Lott JA, Blokhin SA, Wolf P, Moser P, Hofmann W, Nadtochiy AM, Payusov A, Bimberg D. Highly temperature-stable modulation characteristics of multioxide-aperture high-speed 980 nm vertical cavity surface emitting lasers Applied Physics Letters. 97. DOI: 10.1063/1.3499361 |
0.43 |
|
| 2009 |
Lott JA, Shchukina VA, Ledentsova NN, Stintzb A, Hopferc F, Mutigc A, Fiolc G, Bimbergc D, Blokhind SA, Karachinskyd LY, Maximove MV, Novikove II, Zakharov ND, Werner P. 20 Gbit/s error free transmission with ̃850 nm GaAs-based vertical cavity surface emitting lasers (VCSELs) containing InAs-GaAs submonolayer quantum dot insertions Proceedings of Spie - the International Society For Optical Engineering. 7211. DOI: 10.1117/12.816947 |
0.439 |
|
| 2009 |
Ledentsov NN, Lott JA, Shchukin VA, Quast H, Hopfer F, Fiol G, Mutig A, Moser P, Germann T, Strittmatter A, Karachinsky LY, Blokhin SA, Novikov II, Nadtochi AM, Zakharov ND, et al. Quantum dot insertions in VCSELs from 840 to 1300 nm: Growth, characterization, and device performance Proceedings of Spie - the International Society For Optical Engineering. 7224. DOI: 10.1117/12.810192 |
0.411 |
|
| 2009 |
Mutig A, Blokhin SA, Nadtochiy AM, Fiol G, Lott JA, Shchukin VA, Ledentsov NN, Bimberg D. Frequency response of large aperture oxide-confined 850 nm vertical cavity surface emitting lasers Applied Physics Letters. 95. DOI: 10.1063/1.3231446 |
0.398 |
|
| 2009 |
Blokhin SA, Lott JA, Mutig A, Fiol G, Ledentsov NN, Maximov MV, Nadtochiy AM, Shchukin VA, Bimberg D. Oxide-confined 850 nm VCSELs operating at bit rates up to 40 Gbit/s Electronics Letters. 45: 501-503. DOI: 10.1049/El.2009.0552 |
0.437 |
|
| 2008 |
Hopfer F, Mutig A, Strittmatter A, Fiol G, Moser P, Bimberg D, Shchukin VA, Ledentsov NN, Lott JA, Quast H, Kuntz M, Mikhrin SS, Krestnikov IL, Livshits DA, Kovsh AR, et al. High-speed directly and indirectly modulated VCSELs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. DOI: 10.1109/ICIPRM.2008.4703064 |
0.307 |
|
| 2007 |
Siskaninetz WJ, Ehret JE, Albrecht JD, Bedford RG, Nelson TR, Lott JA. Gigahertz modulation of GaAs-based bipolar cascade vertical cavity surface-emitting lasers. Optics Letters. 32: 136-8. PMID 17186042 DOI: 10.1364/Ol.32.000136 |
0.46 |
|
| 2005 |
Siskaninetz WJ, Ehret JE, Maley SB, Griffith JC, Lott JA, Nelson TR. Improved luminescence in light-emitting diodes using esaki tunnel junctions Optics Infobase Conference Papers. DOI: 10.1364/Fio.2005.Fthe4 |
0.373 |
|
| 2005 |
Lott JA, Stintz A, Kovsh AR, Ledentsov NN. GaAs-based bipolar cascade InAs/InGaAs quantum dot VCSELs emitting near 1300 nm Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2005: 533-534. DOI: 10.1109/LEOS.2005.1548114 |
0.301 |
|
| 2005 |
Lott JA, Kovsh AR, Ledentsov NN, Bimberg D. GaAs-based InAs/InGaAs quantum dot vertical cavity and vertical external cavity surface emitting lasers emitting near 1300 nm Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 2005: 160-161. DOI: 10.1109/CLEOPR.2005.1569382 |
0.406 |
|
| 2005 |
Siskaninetz WJ, Ehret JE, Lott JA, Griffith JC, Nelson TR. Enhanced performance of bipolar cascade light-emitting diodes by doping the aluminum oxide apertures Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1885168 |
0.396 |
|
| 2004 |
Kovsh AR, Ledentsov NN, Mikhrin SS, Zhukov AE, Livshits DA, Maleev NA, Maximov MV, Ustinov VM, Gubenko AE, Gadjiev IM, Portnoi EL, Wang JS, Chi J, Ouyang D, Bimberg D, ... Lott JA, et al. Long-wavelength (1.3 -1.5 micron) quantum dot lasers based on GaAs Proceedings of Spie - the International Society For Optical Engineering. 5349: 31-45. DOI: 10.1117/12.531245 |
0.411 |
|
| 2003 |
Ochoa EM, Lott JA, Nelson TR, Harvey MC, Raley JA, Stintz A, Malloy KJ. Monolithic III-V and hybrid polysilicon-III-V microelectromechanical tunable multilayer filters and vertical cavity surface emitting lasers Proceedings of Spie - the International Society For Optical Engineering. 5116: 465-472. DOI: 10.1117/12.499674 |
0.391 |
|
| 2003 |
Starman LA, Lott JA, Amer MS, Cowan WD, Busbee JD. Stress characterization of MEMS microbridges by micro-Raman spectroscopy Sensors and Actuators, a: Physical. 104: 107-116. DOI: 10.1016/S0924-4247(02)00432-6 |
0.607 |
|
| 2003 |
Lott JA, Ledentsov NN, Kovsh AR, Ustinov VM, Bimberg D. Multiple stacks of InAs/InGaAs quantum dots for GaAs-based 1.3 μm vertical cavity surface emitting lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 2: 499-500. |
0.402 |
|
| 2002 |
Bimberg D, Ledentsov NN, Lott JA. Quantum-dot vertical-cavity surface-emitting lasers Mrs Bulletin. 27: 531-537. DOI: 10.1557/Mrs2002.172 |
0.477 |
|
| 2002 |
Ledentsov NN, Bimberg D, Ustinov VM, Alferov ZI, Lott JA. Self-organized InGaAs quantum dots for advanced applications in optoelectronics Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 41: 949-952. DOI: 10.1143/Jjap.41.949 |
0.443 |
|
| 2002 |
Ledentsov NN, Ustinov VM, Bimberg D, Lott JA, Alferov ZI. Applications of quantum dots in semiconductor lasers International Journal of High Speed Electronics and Systems. 12: 177-205. DOI: 10.1142/S0129156402001150 |
0.506 |
|
| 2002 |
Ustinov VM, Zhukov AE, Maleev NA, Egorov AY, Kovsh AR, Mikhrin SS, Cherkashin NA, Shernyakov YM, Maximov MV, Tsatsul'nikov AF, Ledentsov NN, Alferov ZI, Lott JA, Bimberg D. 1.3 micron edge- and surface-emitting quantum dot lasers grown on GaAs substrates Proceedings of Spie - the International Society For Optical Engineering. 4646: 38-50. DOI: 10.1117/12.470541 |
0.429 |
|
| 2002 |
Lott JA. Fabrication and applications of lift-off vertical cavity surface emitting laser (VCSEL) disks Proceedings of Spie - the International Society For Optical Engineering. 4649: 203-210. DOI: 10.1117/12.469235 |
0.314 |
|
| 2002 |
Siskaninetz WJ, Ehret JE, Dang TN, Van Nostrand JE, Lott JA, Nelson TR. Reduced power consumption in GaAs-based bipolar cascade lasers Electronics Letters. 38: 1259-1261. DOI: 10.1049/El:20020857 |
0.446 |
|
| 2002 |
Grundmann M, Ledentsov NN, Hopfer F, Heinrichsdorff F, Guffarth F, Bimberg D, Ustinov VM, Zhukov AE, Kovsh AR, Maximov MV, Musikhin YG, Alferov ZI, Lott JA, Zhakharov ND, Werner P. Long-wavelength quantum-dot lasers Journal of Materials Science: Materials in Electronics. 13: 643-647. DOI: 10.1023/A:1020610109933 |
0.453 |
|
| 2002 |
Ledentsov N, Bimberg D, Ustinov VM, Alferov ZI, Lott JA. Quantum dots for VCSEL applications at λ = 1.3 μm Physica E: Low-Dimensional Systems and Nanostructures. 13: 871-875. DOI: 10.1016/S1386-9477(02)00223-0 |
0.495 |
|
| 2001 |
Sakharov AV, Krestnikov IL, Maleev NA, Kovsh AR, Zhukov AE, Tsatsul'nikov AF, Ustinov VM, Ledentsov NN, Bimberg D, Lott JA, Alferov ZI. 1.3 μm vertical microcavities with InAs/InGaAs quantum dots and devices based on them Semiconductors. 35: 854-859. DOI: 10.1134/1.1385724 |
0.456 |
|
| 2001 |
Ledentsov NN, Ustinov VM, Shchukin VA, Bimberg D, Lott JA, Alferov ZI. High-power long-wavelength lasers using GaAs-based quantum dots Proceedings of Spie - the International Society For Optical Engineering. 4287: 71-82. DOI: 10.1117/12.429786 |
0.346 |
|
| 2001 |
Krestnikov IL, Maleev NA, Sakharov AV, Kovsh AR, Zhukov AE, Tsatsul'Nikov AF, Ustinov VM, Alferov ZI, Ledentsov NN, Bimberg D, Lott JA. 1.3 μm resonant-cavity InGaAs/GaAs quantum dot light-emitting devices Semiconductor Science and Technology. 16: 844-848. DOI: 10.1088/0268-1242/16/10/306 |
0.455 |
|
| 2001 |
Ustinov VM, Maleev NA, Zhukov AE, Kovsh AR, Sakharov AV, Volovik BV, Tsatsul'nikov AF, Ledentsov NN, Alferov ZI, Lott JA, Bimberg D. Vertical-cavity emitting devices with quantum-dot structures Physics-Uspekhi. 44: 813-816. DOI: 10.1070/Pu2001V044N08Abeh000967 |
0.412 |
|
| 2001 |
Ustinov VM, Zhukov AE, Maleev NA, Kovsh AR, Mikhrin SS, Volovik BV, Musikhin YG, Shernyakov YM, Maximov MV, Tsatsul'nikov AF, Ledentsov NN, Alferov ZI, Lott JA, Bimberg D. 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy Journal of Crystal Growth. 227: 1155-1161. DOI: 10.1016/S0022-0248(01)01006-5 |
0.516 |
|
| 2001 |
Bimberg D, Grundmann M, Ledentsov NN, Mao MH, Ribbat C, Sellin R, Ustinov VM, Zhukov AE, Alferov ZI, Lott JA. Novel infrared quantum dot lasers: Theory and reality Physica Status Solidi (B) Basic Research. 224: 787-796. DOI: 10.1002/(Sici)1521-3951(200104)224:3<787::Aid-Pssb787>3.0.Co;2-M |
0.485 |
|
| 2001 |
Lott JA, Ledentsov NN, Ustinov VM, Alferov ZI, Bimberg D. Continuous wave 1.3 μm InAs-InGaAs quantum dot VCSELs on GaAs substrates Conference On Lasers and Electro-Optics Europe - Technical Digest. 137. |
0.357 |
|
| 2001 |
Lott JA, Ledentsov NN, Ustinov VM, Bimberg D. Quantum dot vertical cavity lasers Leos Summer Topical Meeting. 17-18. |
0.381 |
|
| 2000 |
Lott JA, Ochoa EM, Siskaninetz WJ, Noble MJ. Tunable red vertical cavity surface emitting lasers using electrostatic actuation Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 2000: 13-16. DOI: 10.1109/COMMAD.2000.1022882 |
0.355 |
|
| 2000 |
Ledentsov NN, Grundmann M, Heinrichsdorff F, Bimberg D, Ustinov VM, Zhukov AE, Maximov MV, Alferov ZI, Lott JA. Quantum-dot heterostructure lasers Ieee Journal On Selected Topics in Quantum Electronics. 6: 439-451. DOI: 10.1109/2944.865099 |
0.48 |
|
| 2000 |
Ustinov VM, Zhukov AE, Kovsh AR, Mikhrin SS, Maleev NA, Volovik BV, Musikhin YG, Shernyakov YM, Kondat'eva EY, Maximov MV, Tsatsul'nikov AF, Ledentsov NN, Alferov ZI, Lott JA, Bimberg D. Long-wavelength quantum dot lasers on GaAs substrates Nanotechnology. 11: 397-400. DOI: 10.1088/0957-4484/11/4/341 |
0.496 |
|
| 2000 |
Lott JA, Ledentsov NN, Ustinov VM, Maleev NA, Zhukov AE, Kovsh AR, Maximov MV, Volovik BV, Alferov ZI, Bimberg D. InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 μm Electronics Letters. 36: 1384-1385. DOI: 10.1049/El:20000988 |
0.493 |
|
| 2000 |
Lott JA, Ledentsov NN, Ustinov VM, Maleev NA, Zhukov AE, Maximov MV, Volovik BV, Alferov ZI, Bimberg D. Vertical cavity surface emitting lasers with InAs-InGaAs quantum dot active regions on GaAs substrates emitting at 1.3 μm Conference Digest - Ieee International Semiconductor Laser Conference. 13-14. |
0.413 |
|
| 2000 |
Lott JA, Ledentsov NN, Ustinov VM, Maleev NA, Zhukov AE, Kovsh AR, Maximov MV, Volovik BV, Alferov ZI, Bimberg D. Room temperature continuous wave InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 μm Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 304-305. |
0.357 |
|
| 2000 |
Bimberg D, Ledentsov NN, Sellin R, Ribbat C, Mao M, Grundmann M, Ustinov VM, Zhukov AE, Kovsh AR, Alferov ZI, Lott JA. Quantum dot lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 1: 302-303. |
0.383 |
|
| 2000 |
Ustinov VM, Zhukov AE, Kovsh AR, Mikhrin SS, Maleev NA, Volovik BV, Musikhin YG, Shernyakov YM, Kondrat'eva EY, Maximov MV, Tsatsul'nikov AF, Ledentsov NN, Alferov ZI, Lott JA, Bimberg D. Long wavelength quantum dot lasers on GaAs substrates Proceedings of the 8th International Symposium Nanostructures: Physics and Technology. 551-556. |
0.412 |
|
| 1999 |
Ledentsov NN, Bimberg D, Ustinov VM, Maximov MV, Alferov ZI, Kalosha VP, Lott JA. Interconnection between gain spectrum and cavity mode in a quantum-dot vertical-cavity laser Semiconductor Science and Technology. 14: 99-102. DOI: 10.1088/0268-1242/14/1/016 |
0.454 |
|
| 1998 |
Lott JA. Design of semiconductor microcavity emitters and detectors for optical memory and interconnect systems Proceedings of Spie. 3547: 168-178. DOI: 10.1117/12.319637 |
0.434 |
|
| 1998 |
Loehr JP, Noble MJ, Lott JA. Effects of native oxides and optical confinement on microactivity VCSEL spontaneous emission High-Power Lasers and Applications. 3283: 830-840. DOI: 10.1117/12.316736 |
0.367 |
|
| 1998 |
Lott JA, Noble MJ, Loehr JP, Ledentsov NN, Ustinov VM, Bimberg D. Measurement of resonant-mode blueshifts in quantum-dot vertical-cavity surface-emitting lasers Proceedings of Spie. 3419: 208-211. DOI: 10.1117/12.311011 |
0.471 |
|
| 1998 |
Noble MJ, Loehr JP, Lott JA. Optical optimization of microcavity VCSELs High-Power Lasers and Applications. 3286: 230-239. DOI: 10.1117/12.305464 |
0.342 |
|
| 1998 |
Noble M, Lott J, Loehr J. Quasi-exact optical analysis of oxide-apertured microcavity VCSELs using vector finite elements Ieee Journal of Quantum Electronics. 34: 2327-2339. DOI: 10.1109/3.736102 |
0.348 |
|
| 1998 |
Noble M, Loehr J, Lott J. Analysis of microcavity VCSEL lasing modes using a full-vector weighted index method Ieee Journal of Quantum Electronics. 34: 1890-1903. DOI: 10.1109/3.720225 |
0.447 |
|
| 1998 |
Bimberg D, Ledentsov N, Grundmann M, Heinrichsdorff F, Ustinov V, Kop’ev P, Maximov M, Alferov Z, Lott J. Application of self-organized quantum dots to edge emitting and vertical cavity lasers Physica E: Low-Dimensional Systems and Nanostructures. 3: 129-136. DOI: 10.1016/S1386-9477(98)00227-6 |
0.505 |
|
| 1998 |
Bimberg D, Ledentsov N, Grundmann M, Heinrichsdorff F, Ustinov V, Kop'ev P, Alferov Z, Lott J. Edge and vertical cavity surface emitting InAs quantum dot lasers Solid-State Electronics. 42: 1433-1437. DOI: 10.1016/S0038-1101(98)00044-6 |
0.499 |
|
| 1997 |
Lott J, Ledentsov N, Ustinov V, Egorov A, Zhukov A, Kop'ev P, Alferov Z, Bimberg D. Vertical cavity lasers based on vertically coupled quantum dots Electronics Letters. 33: 1150. DOI: 10.1049/El:19970785 |
0.49 |
|
| 1997 |
Lott J. Design of vertical cavity lasers with intracavity photodetectors Electronics Letters. 33: 955. DOI: 10.1049/El:19970662 |
0.457 |
|
| 1994 |
Choquette KD, Schneider RP, Lott JA. Lasing characteristics of visible AlGaInP/AlGaAs vertical-cavity lasers. Optics Letters. 19: 969-71. PMID 19844504 DOI: 10.1364/Ol.19.000969 |
0.347 |
|
| 1994 |
SCHNEIDER R, LOTT J, CRAWFORD MH, CHOQUETTE K. EPITAXIAL DESIGN AND PERFORMANCE OF AlGaInP RED (650–690 nm) VCSELs International Journal of High Speed Electronics and Systems. 5: 625-666. DOI: 10.1142/S0129156494000255 |
0.309 |
|
| 1994 |
Howard AJ, Ashby CIH, Lott JA, Schneider RP, Corless RF. Electrochemical sulfur passivation of visible (~670 nm) AlGaInP lasers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 1063-1067. DOI: 10.1116/1.579285 |
0.341 |
|
| 1994 |
Chow WW, Schneider RP, Lott JA, Choquette KD. Wavelength dependence of the threshold in an InGaP‐InAlGaP vertical cavity surface emitting laser Applied Physics Letters. 65: 135-137. DOI: 10.1063/1.112972 |
0.344 |
|
| 1994 |
Hibbs-Brenner M, Schneider R, Morgan R, Walterson R, Lehman J, Kalweit E, Lott J, Lear K, Choquette K, Juergensen H. Metalorganic vapour-phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes Microelectronics Journal. 25: 747-755. DOI: 10.1016/0026-2692(94)90138-4 |
0.331 |
|
| 1994 |
Schneider R, Lott J, Lear K, Choquette K, Crawford M, Kilcoyne S, Figiel J. Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes Journal of Crystal Growth. 145: 838-845. DOI: 10.1016/0022-0248(94)91151-7 |
0.347 |
|
| 1993 |
Lott J, Schneider R, Molly K. Visible (639 nm >or= lambda >or=661 nm) vertical cavity surface emitting laser diodes Ieee Transactions On Electron Devices. 40: 2115-2116. DOI: 10.1109/16.239763 |
0.338 |
|
| 1993 |
Lott JA, Schneider RP, Zolper JC, Malloy KJ. AlGaInP visible vertical cavity surface emitting lasers operating with gain contributions from then=2 quantum well transition Applied Physics Letters. 63: 3485-3487. DOI: 10.1063/1.110128 |
0.421 |
|
| 1993 |
Schneider RP, Lott JA. Cavity design for improved electrical injection in InAlGaP/AlGaAs visible (639–661 nm) vertical‐cavity surface‐emitting laser diodes Applied Physics Letters. 63: 917-919. DOI: 10.1063/1.109844 |
0.306 |
|
| 1993 |
Lott J, Schneider R, Choquette K, Kilcoyne S, Figiel J, Lott J. Room temperature continuous wave operation of red vertical cavity surface emitting laser diodes Electronics Letters. 29: 1693. DOI: 10.1049/El:19931126 |
0.346 |
|
| 1993 |
Lott J, Schneider R. Electrically injected visible (639–661 nm) vertical cavity surface emitting lasers Electronics Letters. 29: 830-832. DOI: 10.1049/el:19930555 |
0.328 |
|
| 1992 |
Schneider RP, Bryan RP, Lott JA, Olbright GR. Visible (657 nm) InGaP/InAlGaP strained quantum well vertical‐cavity surface‐emitting laser Applied Physics Letters. 60: 1830-1832. DOI: 10.1063/1.107178 |
0.311 |
|
| 1992 |
Schneider R, Bryan R, Lott J, Jones E, Olbright G. MOVPE growth of InAlGaP-based visible vertical-cavity surface-emitting lasers Journal of Crystal Growth. 124: 763-771. DOI: 10.1016/0022-0248(92)90549-X |
0.313 |
|
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