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Jonathan Pelz - Publications

Affiliations: 
Ohio State University, Columbus, Columbus, OH 
Area:
Condensed Matter Physics
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31 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Pelz J, Clarke J. Quantitative "local-interference" model for 1/f noise in metal films. Physical Review. B, Condensed Matter. 36: 4479-4482. PMID 9943442 DOI: 10.1103/Physrevb.36.4479  0.344
2017 Xu J, Katoch J, Ahmed AS, Pinchuk IV, Young JR, Johnston-Halperin E, Pelz J, Kawakami RK. Growth of uniform CaGe 2 films by alternating layer molecular beam epitaxy Journal of Crystal Growth. 460: 134-138. DOI: 10.1016/J.Jcrysgro.2016.12.102  0.371
2013 Cardwell DW, Sasikumar A, Arehart AR, Kaun SW, Lu J, Keller S, Speck JS, Mishra UK, Ringel SA, Pelz JP. Spatially-resolved spectroscopic measurements of Ec - 0.57 eV traps in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 102. DOI: 10.1063/1.4806980  0.325
2012 Cai W, Che Y, Pelz JP, Hemesath ER, Lauhon LJ. Direct measurements of lateral variations of Schottky barrier height across "end-on" metal contacts to vertical Si nanowires by ballistic electron emission microscopy. Nano Letters. 12: 694-8. PMID 22214531 DOI: 10.1021/Nl203568C  0.399
2012 Cardwell DW, Arehart AR, Poblenz C, Pei Y, Speck JS, Mishra UK, Ringel SA, Pelz JP. Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor Applied Physics Letters. 100. DOI: 10.1063/1.4714536  0.342
2011 Park K, Seok Go H, Jeon Y, Pelz JP, Zhang X, Skowronski M. Dependence of spontaneous polarization on stacking sequence in SiC revealed by local Schottky barrier height variations over a partially formed 8H-SiC layer on a 4H-SiC substrate Applied Physics Letters. 99: 252102. DOI: 10.1063/1.3670329  0.655
2010 Marginean C, Pelz JP, Lehman SY, Cederberg JG. Measurements of the quantum-confined conduction band energy in the wetting layer surrounding individual In0.4 Ga0.6 As quantum dots by cross-sectional ballistic electron emission microscopy Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/PhysRevB.82.035304  0.376
2009 Cai W, Park K, Pelz JP. Nanometer-resolution measurement and modeling of lateral variations of the effective work function at the bilayerPt/Al/SiO2interface Physical Review B. 80. DOI: 10.1103/Physrevb.80.165322  0.671
2007 Cai W, Stone SE, Pelz JP, Edge LF, Schlom DG. Conduction band energies and hot-electron transport characteristics of epitaxial Sc2O3∕Si (111) studied by ballistic electron emission microscopy and internal photoemission Applied Physics Letters. 91: 042901. DOI: 10.1063/1.2757150  0.357
2006 Park K, Ding Y, Pelz JP, Neudeck PG, Trunek AJ. Valence band structure and band offset of 3C- and 4H-SiC studied by ballistic hole emission microscopy Applied Physics Letters. 89: 042103. DOI: 10.1063/1.2218302  0.645
2006 Haick H, Pelz JP, Ligonzo T, Ambrico M, Cahen D, Wei C, Marginean C, Tivarus C, Tung RT. Controlling Au/n-GaAs junctions by partial molecular monolayers Physica Status Solidi (a) Applications and Materials Science. 203: 3438-3451. DOI: 10.1002/Pssa.200622381  0.776
2005 Tivarus C, Pelz JP, Hudait MK, Ringel SA. Direct measurement of quantum confinement effects at metal to quantum-well nanocontacts. Physical Review Letters. 94: 206803. PMID 16090268 DOI: 10.1103/Physrevlett.94.206803  0.782
2005 Park K, Pelz JP, Grim J, Skowronski M. Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy Applied Physics Letters. 87: 232103. DOI: 10.1063/1.2138442  0.712
2005 Tivarus C, Pelz JP, Hudait MK, Ringel SA. Spatial resolution of ballistic electron emission microscopy measured on metal/quantum-well Schottky contacts Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2120899  0.784
2005 Tivarus C, Park KB, Hudait MK, Ringel SA, Pelz JP. Nanoscale characterization of metal/semiconductor nanocontacts Aip Conference Proceedings. 788: 280-284. DOI: 10.1063/1.2062977  0.749
2005 Park K, Ding Y, Pelz JP, Mikhov MK, Wang Y, Skromme BJ. Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts: Cubic inclusions in hexagonal SiC Applied Physics Letters. 86: 222109. DOI: 10.1063/1.1935757  0.674
2004 Ding Y, Park K, Pelz JP, Palle KC, Mikhov MK, Skromme BJ, Meidia H, Mahajan S. Cubic inclusions in 4H-SiC studied with ballistic electron-emission microscopy Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 22: 1351-1355. DOI: 10.1116/1.1705644  0.721
2004 Ding Y, Park K, Pelz JP, Palle KC, Mikhov MK, Skromme BJ, Meidia H, Mahajan S. Quantum well state of self-forming3C−SiCinclusions in4HSiC determined by ballistic electron emission microscopy Physical Review B. 69. DOI: 10.1103/Physrevb.69.041305  0.726
2004 Hudait MK, Lin Y, Palmisiano MN, Tivarus C, Pelz JP, Ringel SA. Comparison of mixed anion, InAs yP 1-y and mixed cation, In xAl 1-xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates Journal of Applied Physics. 95: 3952-3960. DOI: 10.1063/1.1667006  0.745
2003 Ebner C, Park K, Nielsen J, Pelz JP. Simulations of denuded-zone formation during growth on surfaces with anisotropic diffusion Physical Review B. 68. DOI: 10.1103/Physrevb.68.245404  0.617
2003 Heller ER, Tivarus C, Pelz JP. Avalanche ballistic electron emission microscopy with single hot-electron sensitivity Applied Physics Letters. 83: 2841-2843. DOI: 10.1063/1.1613996  0.767
2003 Heller ER, Pelz JP. Observation of a scanning tunneling microscopy induced photocurrent during ballistic electron emission microscopy Applied Physics Letters. 82: 3919-3921. DOI: 10.1063/1.1579844  0.351
2003 Hudait MK, Lin Y, Wilt DM, Speck JS, Tivarus CA, Heller ER, Pelz JP, Ringel SA. High-quality InAsyP1-y step-graded buffer by molecular-beam epitaxy Applied Physics Letters. 82: 3212-3214. DOI: 10.1063/1.1572476  0.75
2002 Tivarus C, Ding Y, Pelz JP. Calculated potential profile near charged threading dislocations at metal/semiconductor interfaces Journal of Applied Physics. 92: 6010-6013. DOI: 10.1063/1.1516272  0.772
2001 Im HJ, Ding Y, Pelz JP, Heying B, Speck JS. Characterization of individual threading dislocations in GaN using ballistic electron emission microscopy. Physical Review Letters. 87: 106802. PMID 11531495 DOI: 10.1103/PhysRevLett.87.106802  0.644
2001 Im H, Ding Y, Pelz JP, Choyke WJ. Nanometer-scale test of the Tung model of Schottky-barrier height inhomogeneity Physical Review B. 64. DOI: 10.1103/Physrevb.64.075310  0.341
1999 Kaczer B, Im H, Pelz JP, Wallace RM. Erratum: “Microscopic characterization of hot-electron spreading and trapping in SiO2 films using ballistic electron emission microscopy” [Appl. Phys. Lett. 73, 1871 (1998)] Applied Physics Letters. 74: 478-478. DOI: 10.1063/1.123041  0.324
1998 Kaczer B, Im H, Pelz JP, Chen J, Choyke WJ. Direct observation of conduction-band structure of4H- and6H−SiCusing ballistic electron emission microscopy Physical Review B. 57: 4027-4032. DOI: 10.1103/Physrevb.57.4027  0.339
1998 Kaczer B, Im H, Pelz JP, Wallace RM. Microscopic characterization of hot-electron spreading and trapping in SiO2 films using ballistic electron emission microscopy Applied Physics Letters. 73: 1871-1873. DOI: 10.1063/1.122310  0.333
1998 Im H, Kaczer B, Pelz JP, Choyke WJ. Ballistic electron emission microscopy study of Schottky contacts on 6H- and 4H-SiC Applied Physics Letters. 72: 839-841. DOI: 10.1063/1.120910  0.304
1998 Im HJ, Kaczer B, Pelz JP, Limpijumnong S, Lambrecht WRL, Choyke WJ. Nanometer-scale investigation of metal-SiC interfaces using ballistic electron emission microscopy Journal of Electronic Materials. 27: 345-352. DOI: 10.1007/S11664-998-0413-8  0.306
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