| Year |
Citation |
Score |
| 2020 |
Ma Y, Cullen DA, Goodwill JM, Xu Q, More KL, Skowronski M. Exchange of ions across TiN/TaOx interface during electro-formation of TaOx-based resistive switching devices. Acs Applied Materials & Interfaces. PMID 32441092 DOI: 10.1021/Acsami.0C06960 |
0.308 |
|
| 2020 |
Xu Q, Ma Y, Skowronski M. Nanoscale density variations in sputtered amorphous TaOx functional layers in resistive switching devices Journal of Applied Physics. 127: 55107. DOI: 10.1063/1.5134098 |
0.352 |
|
| 2018 |
Ma Y, Li D, Herzing AA, Cullen DA, Sneed BT, More KL, Nuhfer NT, Bain JA, Skowronski M. Formation of the Conducting Filament in TaOx Resistive Switching Devices by Thermal-Gradient-Induced Cation Accumulation. Acs Applied Materials & Interfaces. PMID 29912544 DOI: 10.1021/Acsami.8B03726 |
0.32 |
|
| 2017 |
Yan W, Sitaputra W, Skowronski M, Feenstra RM. Growth and electronic properties of nanolines on TiO2-terminated SrTiO3(001) surfaces Journal of Applied Physics. 122: 124305. DOI: 10.1063/1.5004982 |
0.31 |
|
| 2016 |
Kwon J, Sharma AA, Chen CM, Fantini A, Jurczak M, Herzing AA, Bain JA, Picard YN, Skowronski M. Transient thermometry and HRTEM analysis of filamentary resistive switches. Acs Applied Materials & Interfaces. PMID 27351065 DOI: 10.1021/Acsami.6B05034 |
0.35 |
|
| 2015 |
Kamaladasa RJ, Sharma AA, Lai YT, Chen W, Salvador PA, Bain JA, Skowronski M, Picard YN. In situ TEM imaging of defect dynamics under electrical bias in resistive switching rutile-TiO₂. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 21: 140-53. PMID 25529361 DOI: 10.1017/S1431927614013555 |
0.362 |
|
| 2015 |
Sitaputra W, Skowronski M, Feenstra RM. Topographic and electronic structure of cleaved SrTiO3(001) surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4916890 |
0.301 |
|
| 2015 |
Sitaputra W, Sivadas N, Skowronski M, Xiao D, Feenstra RM. Oxygen vacancies on SrO-terminated SrTi O3(001) surfaces studied by scanning tunneling spectroscopy Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.205408 |
0.303 |
|
| 2015 |
Abadier M, Song H, Sudarshan TS, Picard YN, Skowronski M. Glide of threading edge dislocations after basal plane dislocation conversion during 4H–SiC epitaxial growth Journal of Crystal Growth. 418: 7-14. DOI: 10.1016/J.Jcrysgro.2015.02.004 |
0.463 |
|
| 2015 |
Kwon J, Sharma AA, Bain JA, Picard YN, Skowronski M. Oxygen vacancy creation, drift, and aggregation in TiO2-based resistive switches at low temperature and voltage Advanced Functional Materials. 25: 2876-2883. DOI: 10.1002/Adfm.201500444 |
0.352 |
|
| 2014 |
Abadier M, Myers-Ward RL, Song H, Kurt Gaskill D, Eddy CR, Sudarshan TS, Picard YN, Skowronski M. Site specific TEM specimen preparation for characterization of extended defects in 4H-SiC epilayers Microscopy and Microanalysis. 20: 344-345. DOI: 10.1017/S1431927614003444 |
0.463 |
|
| 2014 |
Sharma AA, Noman M, Abdelmoula M, Skowronski M, Bain JA. Electronic instabilities leading to electroformation of binary metal oxide-based resistive switches Advanced Functional Materials. 24: 5522-5529. DOI: 10.1002/Adfm.201400461 |
0.345 |
|
| 2013 |
Abadier M, Myers-Ward RL, Mahadik NA, Stahlbush RE, Wheeler VD, Nyakiti LO, Eddy CR, Gaskill DK, Song H, Sudarshan TS, Picard YN, Skowronski M. Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy Journal of Applied Physics. 114. DOI: 10.1063/1.4821242 |
0.476 |
|
| 2013 |
Kamaladasa RJ, Noman M, Chen W, Salvador PA, Bain JA, Skowronski M, Picard YN. Dislocation impact on resistive switching in single-crystal SrTiO 3 Journal of Applied Physics. 113. DOI: 10.1063/1.4811525 |
0.404 |
|
| 2013 |
Meng Lu Y, Noman M, Picard YN, Bain JA, Salvador PA, Skowronski M. Impact of Joule heating on the microstructure of nanoscale TiO2 resistive switching devices Journal of Applied Physics. 113. DOI: 10.1063/1.4803033 |
0.331 |
|
| 2012 |
Abadier M, Berechman R, Neudeck P, Trunek A, Skowronski M. Nucleation of 3C-SiC associated with threading edge dislocations during chemical vapor deposition Journal of Crystal Growth. 347: 45-48. DOI: 10.1016/J.Jcrysgro.2012.03.014 |
0.417 |
|
| 2012 |
Berechman RA, Chung S, Chung G, Sanchez E, Mahadik NA, Stahlbush RE, Skowronski M. Trapezoid defect in 4HSiC epilayers Journal of Crystal Growth. 338: 16-19. DOI: 10.1016/J.Jcrysgro.2011.10.009 |
0.384 |
|
| 2011 |
Wheeler VD, VanMil BL, Myers-Ward RL, Chung S, Picard YN, Skowronski M, Stahlbush RE, Mahadik NA, Eddy CR, Gaskill DK. Effects of nitrogen doping on basal plane dislocation reduction in 8° off-cut 4H-SiC epilayers Materials Science Forum. 679: 63-66. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.63 |
0.381 |
|
| 2011 |
Chung G, Loboda MJ, Zhang J, Wan JW, Carlson EP, Toth TJ, Stahlbush RE, Skowronski M, Berechman R, Sundaresan SG, Singh R. 4H-SiC epitaxy with very smooth surface and low basal plane dislocation on 4 degree off-axis wafer Materials Science Forum. 679: 123-126. DOI: 10.4028/Www.Scientific.Net/Msf.679-680.123 |
0.444 |
|
| 2011 |
Park K, Seok Go H, Jeon Y, Pelz JP, Zhang X, Skowronski M. Dependence of spontaneous polarization on stacking sequence in SiC revealed by local Schottky barrier height variations over a partially formed 8H-SiC layer on a 4H-SiC substrate Applied Physics Letters. 99: 252102. DOI: 10.1063/1.3670329 |
0.4 |
|
| 2011 |
Jiang W, Kamaladasa RJ, Lu YM, Vicari A, Berechman R, Salvador PA, Bain JA, Picard YN, Skowronski M. Local heating-induced plastic deformation in resistive switching devices Journal of Applied Physics. 110. DOI: 10.1063/1.3633271 |
0.303 |
|
| 2011 |
Jiang W, Noman M, Lu YM, Bain JA, Salvador PA, Skowronski M. Mobility of oxygen vacancy in SrTiO 3 and its implications for oxygen-migration-based resistance switching Journal of Applied Physics. 110. DOI: 10.1063/1.3622623 |
0.321 |
|
| 2011 |
Chung S, Wheeler V, Myers-Ward R, Nyakiti LO, Eddy CR, Gaskill DK, Skowronski M, Picard YN. Secondary electron dopant contrast imaging of compound semiconductor junctions Journal of Applied Physics. 110: 014902. DOI: 10.1063/1.3597785 |
0.329 |
|
| 2011 |
Chung S, Wheeler V, Myers-Ward R, Eddy CR, Gaskill DK, Wu P, Picard YN, Skowronski M. Direct observation of basal-plane to threading-edge dislocation conversion in 4H-SiC epitaxy Journal of Applied Physics. 109: 094906. DOI: 10.1063/1.3579447 |
0.492 |
|
| 2011 |
Chung S, Berechman RA, McCartney MR, Skowronski M. Electronic structure analysis of threading screw dislocations in 4H–SiC using electron holography Journal of Applied Physics. 109: 034906. DOI: 10.1063/1.3544066 |
0.364 |
|
| 2010 |
Berechman RA, Skowronski M, Soloviev S, Sandvik P. Electrical characterization of 4H–SiC avalanche photodiodes containing threading edge and screw dislocations Journal of Applied Physics. 107: 114504. DOI: 10.1063/1.3432663 |
0.358 |
|
| 2010 |
Jiang W, Evans D, Bain JA, Skowronski M, Salvador PA. Electron beam induced current investigations of Pt/SrTiO3-x interface exposed to chemical and electrical stresses Applied Physics Letters. 96. DOI: 10.1063/1.3339303 |
0.409 |
|
| 2010 |
Picard Y, Kamaladasa R, Kumar N, Trager-Cowan C, Jiang W, Skowronski M, Salvador P, Behmemburg H, Giesen C, Day A, England G. Future Prospects for SEM-based Defect Analysis using Fast Electrons Microscopy and Microanalysis. 16: 608-609. DOI: 10.1017/S1431927610063348 |
0.315 |
|
| 2010 |
Chung S, McCartney M, Berechman R, Picard Y, Skowronski M. Holographic Phase Imaging of Charged Threading Dislocation in 4H-SiC Microscopy and Microanalysis. 16: 564-565. DOI: 10.1017/S1431927610059799 |
0.311 |
|
| 2009 |
Zvanut ME, Ngetich G, Chung HJ, Polyakov AY, Skowronski M, Garces NY, Glaser ER. Defect level of the carbon vacancy-carbon antisite pair center in Si 4H SiC Materials Science Forum. 600: 385-388. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.385 |
0.376 |
|
| 2009 |
Stahlbush RE, VanMil BL, Liu KX, Lew KK, Myers-Ward RL, Gaskill DK, Eddy CR, Zhang X, Skowronski M. Evolution of basal plane dislocations during 4H-SiC epitaxial growth Materials Science Forum. 600: 317-320. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.317 |
0.433 |
|
| 2009 |
Berechman RA, Skowronski M, Zhang Q. Electrical and structural investigation of triangular defects in 4H-SiC junction barrier Schottky devices Journal of Applied Physics. 105: 74513. DOI: 10.1063/1.3103308 |
0.415 |
|
| 2009 |
Zhang X, Li L, Skowronski M, Sumakeris JJ, Paisley MJ, O'Loughlin MJ. Spheroid 3C inclusions in 8° off-axis 4H-SiC epilayers grown by chemical vapor deposition Journal of Applied Physics. 105. DOI: 10.1063/1.2986138 |
0.432 |
|
| 2008 |
Liu KX, Zhang X, Stahlbush RE, Skowronski M, Caldwell JD. Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers Materials Science Forum. 345-348. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.345 |
0.372 |
|
| 2008 |
Picard YN, Liu KX, Stahlbush RE, Twigg ME, Zhang X, Skowronski M. Nondestructive dislocation delineation using topographically enhanced imaging of surface morphologies in 4H-SiC epitaxial layers Journal of Applied Physics. 103: 74904. DOI: 10.1063/1.2903873 |
0.436 |
|
| 2008 |
Fisher P, Du H, Skowronski M, Salvador PA, Maksimov O, Weng X. Stoichiometric, nonstoichiometric, and locally nonstoichiometric SrTiO3 films grown by molecular beam epitaxy Journal of Applied Physics. 103. DOI: 10.1063/1.2827992 |
0.349 |
|
| 2008 |
Li L, Nuhfer N, Skowronski M. Electron Microscopy Study of Localized Gate Forward Breakdown in AlGaN/AlN/GaN High Electron Mobility Transistors Microscopy and Microanalysis. 14: 624-625. DOI: 10.1017/S1431927608083463 |
0.327 |
|
| 2008 |
Lee J, Skowronski M, Sanchez E, Chung G. Origin of basal plane bending in hexagonal silicon carbide single crystals Journal of Crystal Growth. 310: 4126-4131. DOI: 10.1016/J.Jcrysgro.2008.07.042 |
0.74 |
|
| 2008 |
Maksimov O, Fisher P, Skowronski M, Salvador PA, Snyder M, Xu J, Weng X. MgO films grown on yttria-stabilized zirconia by molecular beam epitaxy Journal of Crystal Growth. 310: 2760-2766. DOI: 10.1016/J.Jcrysgro.2008.02.013 |
0.338 |
|
| 2008 |
Du H, Fisher PJ, Skowronski M, Salvador PA, Maksimov O. Growth and structural characterization of epitaxial Ba0.6Sr0.4TiO3 films deposited on REScO3(1 1 0) (RE=Dy, Gd) substrates using pulsed laser deposition Journal of Crystal Growth. 310: 1991-1998. DOI: 10.1016/J.Jcrysgro.2007.10.086 |
0.354 |
|
| 2008 |
Weng X, Fisher P, Skowronski M, Salvador PA, Maksimov O. Structural characterization of TiO2 films grown on LaAlO3 and SrTiO3 substrates using reactive molecular beam epitaxy Journal of Crystal Growth. 310: 545-550. DOI: 10.1016/J.Jcrysgro.2007.10.084 |
0.323 |
|
| 2008 |
Zvanut ME, Ngetich G, Chung HJ, Polyakov AY, Skowronski M. A study of vacancies and vacancy pair defects in 4H SiC grown by halide chemical vapor deposition Journal of Materials Science: Materials in Electronics. 19: 678-681. DOI: 10.1007/S10854-007-9378-2 |
0.387 |
|
| 2007 |
Sumakeris JJ, Hull BA, O'Loughlin MJ, Skowronski M, Balakrishna V. Developing an effective and robust process for manufacturing bipolar SiC power devices Materials Science Forum. 77-80. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.77 |
0.335 |
|
| 2007 |
Zvanut ME, Chung HJ, Polyakov AY, Skowronski M. Point defects in 4H SiC grown by halide chemical vapor deposition Materials Science Forum. 556: 473-476. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.473 |
0.404 |
|
| 2007 |
Neudeck PG, Du H, Skowronski M, Spry DJ, Trunek AJ. Growth and characterization of 3C–SiC and 2H–AlN/GaN films and devices produced on step-free 4H–SiC mesa substrates Journal of Physics D: Applied Physics. 40: 6139-6149. DOI: 10.1088/0022-3727/40/20/S01 |
0.451 |
|
| 2007 |
Zhang X, Skowronski M, Liu KX, Stahlbush RE, Sumakeris JJ, Paisley MJ, O'Loughlin MJ. Glide and multiplication of basal plane dislocations during 4H-SiC homoepitaxy Journal of Applied Physics. 102. DOI: 10.1063/1.2809343 |
0.46 |
|
| 2007 |
Zhang X, Ha S, Hanlumnyang Y, Chou CH, Rodriguez V, Skowronski M, Sumakeris JJ, Paisley MJ, O'Loughlin MJ. Morphology of basal plane dislocations in 4H-SiC homoepitaxial layers grown by chemical vapor deposition Journal of Applied Physics. 101. DOI: 10.1063/1.2437585 |
0.784 |
|
| 2007 |
Snyder M, Xu J, Fisher P, Skowronski M, Salvador PA, Maksimov O. WITHDRAWN: Epitaxial growth of highly mismatched rock-salt oxides Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2007.07.040 |
0.312 |
|
| 2007 |
Fanton MA, Li Q, Polyakov AY, Skowronski M. Electrical properties and deep levels spectra of bulk SiC crystals grown by hybrid physical-chemical vapor transport method Journal of Crystal Growth. 300: 314-318. DOI: 10.1016/J.Jcrysgro.2007.01.002 |
0.386 |
|
| 2006 |
Chung HJ, Huh SW, Polyakov AY, Nigam S, Li Q, Grim J, Skowronski M, Glaser ER, Carlos WE, Freitas JA, Fanton MA. Electrical properties of undoped 6H- and 4H-SiC bulk crystals grown by halide chemical vapor deposition Materials Science Forum. 527: 625-628. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.625 |
0.678 |
|
| 2006 |
Glaser ER, Shanabrook BV, Carlos WE, Chung HJ, Nigam S, Polyakov AY, Skowronski M. Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates Materials Science Forum. 613-616. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.613 |
0.639 |
|
| 2006 |
Garces NY, Carlos WE, Glaser ER, Huh SW, Chung HJ, Nigam S, Polyakov AY, Skowronski M. Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes Materials Science Forum. 547-550. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.547 |
0.639 |
|
| 2006 |
Li Q, Polyakov AY, Skowronski M, Sanchez EK, Loboda MJ, Fanton MA, Bogart T, Gamble D, Smirnov NB, Makarov Y. Resistivity distribution in undoped 6H-SiC boules and wafers Materials Science Forum. 527: 51-54. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.51 |
0.744 |
|
| 2006 |
Huh SW, Polyakov AY, Chung HJ, Nigam S, Skowronski M, Glaser ER, Carlos WE, Fanton MA, Smirnov NB. Deep electron and hole traps in 6H-SiC bulk crystals grown by the halide chemical vapor deposition Materials Science Forum. 527: 497-500. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.497 |
0.692 |
|
| 2006 |
Huh SW, Sumakeris JJ, Polyakov AY, Skowronski M, Klein PB, Shanabrook BV, O'Loughlin MJ. Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers Materials Science Forum. 493-496. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.493 |
0.377 |
|
| 2006 |
Lee JW, Skowronski M. Structure of “Star” Defect in 4H-SiC Substrates and Epilayers Materials Science Forum. 403-406. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.403 |
0.46 |
|
| 2006 |
Glembocki OJ, Skowronski M, Prokes SM, Gaskill DK, Caldwell JD. Observation of free carrier redistribution resulting from stacking fault formation in annealed 4H-SiC Materials Science Forum. 347-350. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.347 |
0.398 |
|
| 2006 |
Zhang X, Ha SY, Benamara M, Skowronski M, Sumakeris JJ, Ryu SH, Paisley MJ, O'Loughlin MJ. Structure of Carrot Defects in 4H-SiC Epilayers Materials Science Forum. 327-332. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.327 |
0.782 |
|
| 2006 |
Du H, Skowronski M, Neudeck PG, Trunek AJ, Spry DJ, Powell JA. Relaxation mechanism of the defect-free 3C-SiC epitaxial films grown on step-free 4H SiC mesas Materials Science Forum. 279-282. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.279 |
0.451 |
|
| 2006 |
Nigam S, Chung HJ, Huh SW, Grim J, Polyakov AY, Fanton MA, Weiland B, Snyder DW, Skowronski M. Growth kinetics and polytype stability in halide chemical vapor deposition of SiC Materials Science Forum. 527: 27-30. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.27 |
0.686 |
|
| 2006 |
Polyakov AY, Fanton MA, Skowronski M, Chung HJ, Nigam S, Huh SW. Halide-CVD growth of bulk SiC crystals Materials Science Forum. 527: 21-26. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.21 |
0.685 |
|
| 2006 |
Sumakeris JJ, Bergman JP, Das MK, Hallin C, Hull BA, Janzén E, Lendenmann H, O'Loughlin MJ, Paisley MJ, Ha SY, Skowronski M, Palmour JW, Carter CH. Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices Materials Science Forum. 141-146. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.141 |
0.746 |
|
| 2006 |
Grim JR, Skowronski M, Everson WJ, Heydemann VD. Selectivity and Residual Damage of Colloidal Silica Chemi-Mechanical Polishing of Silicon Carbide Materials Science Forum. 1095-1098. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1095 |
0.32 |
|
| 2006 |
Everson WJ, Heydemann VD, Gamble RD, Snyder DW, Goda G, Skowronski M, Grim JR, Berkman E, Redwing JM, Acord JD. Preparation and Evaluation of Damage Free Surfaces on Silicon Carbide Materials Science Forum. 1091-1094. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1091 |
0.46 |
|
| 2006 |
Fanton MA, Li Q, Polyakov AY, Cavalero RL, Ray RG, Weiland BE, Skowronski M. Hybrid physical-chemical vapor transport growth of SiC bulk crystals Materials Science Forum. 527: 103-106. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.103 |
0.392 |
|
| 2006 |
Fisher P, Skowronski M, Salvador PA, Snyder M, Xu J, Lanagan M, Maksimov O, Heydemann VD. Molecular Beam Epitaxial Growth and Dielectric Characterization of Ba0.6Sr0.4TiO3 Films Mrs Proceedings. 966. DOI: 10.1557/Proc-0966-T07-23 |
0.317 |
|
| 2006 |
Neudeck PG, Trunek AJ, Spry DJ, Powell JA, Du H, Skowronski M, Bassim ND, Mastro MA, Twigg ME, Holm RT, Henry RL, Eddy CR. Recent Results From Epitaxial Growth on Step Free 4H-SiC Mesas Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B08-03 |
0.461 |
|
| 2006 |
Sumakeris JJ, Hull BA, O'Loughlin MJ, Ha S, Skowronski M, Palmour JW, Carter CH. Do You Really Expect To Grow Epilayers On That? A Rationale For Growing Epilayers On Roughened Surfaces Mrs Proceedings. 911. DOI: 10.1557/Proc-0911-B03-06 |
0.763 |
|
| 2006 |
Maksimov O, Fisher P, Du H, Acord JD, Weng X, Skowronski M, Heydemann VD. Growth of GaN films on GaAs substrates in an As-free environment Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1671-1675. DOI: 10.1116/1.2192538 |
0.386 |
|
| 2006 |
Grim JR, Benamara M, Skowronski M, Everson WJ, Heydemann VD. Transmission electron microscopy analysis of mechanical polishing-related damage in silicon carbide wafers Semiconductor Science and Technology. 21: 1709-1713. DOI: 10.1088/0268-1242/21/12/035 |
0.427 |
|
| 2006 |
Maksimov O, Heydemann VD, Fisher P, Skowronski M, Salvador PA. Structural properties of SrO thin films grown by molecular beam epitaxy on LaAlO3 substrates Applied Physics Letters. 89. DOI: 10.1063/1.2424440 |
0.317 |
|
| 2006 |
Klein PB, Shanabrook BV, Huh SW, Polyakov AY, Skowronski M, Sumakeris JJ, O'Loughlin MJ. Lifetime-limiting defects in n - 4H-SiC epilayers Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2170144 |
0.384 |
|
| 2006 |
Skowronski M, Ha S. Degradation of hexagonal silicon-carbide-based bipolar devices Journal of Applied Physics. 99. DOI: 10.1063/1.2159578 |
0.789 |
|
| 2006 |
Huh SW, Chung HJ, Nigam S, Polyakov AY, Li Q, Skowronski M, Glaser ER, Carlos WE, Shanabrook BV, Fanton MA, Smirnov NB. Residual impurities and native defects in 6H-SiC bulk crystals grown by halide chemical-vapor deposition Journal of Applied Physics. 99. DOI: 10.1063/1.2150593 |
0.67 |
|
| 2006 |
Maksimov O, Gong Y, Du H, Fisher P, Skowronski M, Kuskovsky IL, Heydemann VD. Structural and optical properties of GaN films grown on GaAs substrates by molecular beam epitaxy Vacuum. 80: 1042-1045. DOI: 10.1016/J.Vacuum.2006.01.001 |
0.397 |
|
| 2006 |
Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Pearton SJ, Kolin NG, Merkurisov DI, Boiko VM, Skowronski M, Lee I-. Neutron irradiation effects in AlGaN/GaN heterojunctions Physica B-Condensed Matter. 376: 523-526. DOI: 10.1016/J.Physb.2005.12.133 |
0.351 |
|
| 2006 |
Fisher P, Maksimov O, Du H, Heydemann VD, Skowronski M, Salvador PA. Growth, structure, and morphology of TiO2 films deposited by molecular beam epitaxy in pure ozone ambients Microelectronics Journal. 37: 1493-1497. DOI: 10.1016/J.Mejo.2006.05.010 |
0.36 |
|
| 2006 |
Maksimov O, Fisher P, Skowronski M, Heydemann VD. Effect of nitridation on crystallinity of GaN grown on GaAs by MBE Materials Chemistry and Physics. 100: 457-459. DOI: 10.1016/J.Matchemphys.2006.01.024 |
0.369 |
|
| 2006 |
Fanton M, Snyder D, Weiland B, Cavalero R, Polyakov A, Skowronski M, Chung H. Growth of nitrogen-doped SiC boules by halide chemical vapor deposition Journal of Crystal Growth. 287: 359-362. DOI: 10.1016/J.Jcrysgro.2005.11.044 |
0.442 |
|
| 2006 |
Fanton MA, Li Q, Polyakov AY, Skowronski M, Cavalero R, Ray R. Effects of hydrogen on the properties of SiC crystals grown by physical vapor transport: Thermodynamic considerations and experimental results Journal of Crystal Growth. 287: 339-343. DOI: 10.1016/J.Jcrysgro.2005.11.022 |
0.375 |
|
| 2006 |
Skowronski M, Schunemann PG, Derby JJ. Journal of Crystal Growth: Preface Journal of Crystal Growth. 287: 213. DOI: 10.1016/J.Jcrysgro.2005.10.099 |
0.337 |
|
| 2006 |
Neudeck P, Trunek A, Spry D, Powell J, Du H, Skowronski M, Huang X, Dudley M. CVD Growth of 3C-SiC on 4H/6H Mesas Chemical Vapor Deposition. 12: 531-540. DOI: 10.1002/Cvde.200506460 |
0.436 |
|
| 2005 |
Sumakeris JJ, Das MK, Ha SY, Hurt E, Irvine KG, Paisley MJ, O'Loughlin MJ, Palmour JW, Skowronski M, Hobgood HM, CHCJ. Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices Materials Science Forum. 155-158. DOI: 10.4028/Www.Scientific.Net/Msf.483-485.155 |
0.733 |
|
| 2005 |
Zolper JC, Skowronski M. Advances in Silicon Carbide Electronics Mrs Bulletin. 30: 273-278. DOI: 10.1557/Mrs2005.73 |
0.37 |
|
| 2005 |
Park K, Pelz JP, Grim J, Skowronski M. Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy Applied Physics Letters. 87: 232103. DOI: 10.1063/1.2138442 |
0.416 |
|
| 2005 |
Li Q, Polyakov AY, Skowronski M, Fanton MA, Cavalero RC, Ray RG, Weiland BE. Properties of 6H-SiC crystals grown by hydrogen-assisted physical vapor transport Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1923181 |
0.425 |
|
| 2005 |
Li Q, Polyakov AY, Skowronski M, Sanchez EK, Loboda MJ, Fanton MA, Bogart T, Gamble RD. Nonuniformities of electrical resistivity in undoped 6H-SiC wafers Journal of Applied Physics. 97. DOI: 10.1063/1.1921340 |
0.721 |
|
| 2005 |
Chung HJ, Polyakov AY, Huh SW, Nigam S, Skowronski M, Fanton MA, Weiland BE, Snyder DW. Bulk growth of high-purity 6H-SiC single crystals by halide chemical-vapor deposition Journal of Applied Physics. 97. DOI: 10.1063/1.1865317 |
0.697 |
|
| 2005 |
Polyakov AY, Li Q, Huh SW, Skowronski M, Lopatiuk O, Chernyak L, Sanchez E. Minority carrier diffusion length measurements in 6H-SiC Journal of Applied Physics. 97: 53703. DOI: 10.1063/1.1853501 |
0.367 |
|
| 2005 |
Benamara M, Zhang X, Skowronski M, Ruterana P, Nouet G, Sumakeris JJ, Paisley MJ, O'Loughlin MJ. Structure of the carrot defect in 4H-SiC epitaxial layers Applied Physics Letters. 86. DOI: 10.1063/1.1849416 |
0.435 |
|
| 2005 |
Nigam S, Chung HJ, Polyakov AY, Fanton MA, Weiland BE, Snyder DW, Skowronski M. Growth kinetics study in halide chemical vapor deposition of SiC Journal of Crystal Growth. 284: 112-122. DOI: 10.1016/J.Jcrysgro.2005.06.027 |
0.673 |
|
| 2004 |
Ha S, Skowronski M, Sumakeris JJ, Paisley MJ, Das MK. Driving force of stacking-fault formation in SiC p-i-n diodes. Physical Review Letters. 92: 175504. PMID 15169168 DOI: 10.1103/Physrevlett.92.175504 |
0.749 |
|
| 2004 |
Fanton M, Skowronski M, Snyder DW, Chung HJ, Nigam S, Weiland B, Huh SW. Growth of Bulk SiC by Halide Chemical Vapor Deposition Materials Science Forum. 87-90. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.87 |
0.637 |
|
| 2004 |
Heydemann VD, Everson WJ, Gamble RD, Snyder DW, Skowronski M. Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC Substrates Materials Science Forum. 805-808. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.805 |
0.347 |
|
| 2004 |
Sanchez EM, Wan J, Wang SP, Loboda MJ, Li CH, Skowronski M. Electrical Characterization of Semi-Insulating 6H-SiC Substrates Materials Science Forum. 669-672. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.669 |
0.339 |
|
| 2004 |
Sumakeris JJ, Das MK, Hobgood HM, Müller SG, Paisley MJ, Ha SY, Skowronski M, Palmour JW, CHCJ. Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices Materials Science Forum. 1113-1116. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1113 |
0.704 |
|
| 2004 |
Zhang X, Ha S, Benamara M, Skowronski M, O’Loughlin MJ, Sumakeris JJ. Cross-sectional structure of carrot defects in 4H–SiC epilayers Applied Physics Letters. 85: 5209-5211. DOI: 10.1063/1.1825072 |
0.773 |
|
| 2004 |
Dashiell MW, Xuan G, Ansorge E, Zhang X, Kolodzey J, DeSalvo GC, Gigante JR, Malkowski WJ, Clarke RC, Liu J, Skowronski M. Pseudomorphic SiC alloys formed by Ge ion implantation Applied Physics Letters. 85: 2253-2255. DOI: 10.1063/1.1791741 |
0.379 |
|
| 2004 |
Huh SW, Chung HJ, Benamara M, Skowronski M, Sumakeris JJ, Paisley MJ. Doping-induced strain and relaxation of Al-doped 4H-SiC homoepitaxial layers Journal of Applied Physics. 96: 4637-4641. DOI: 10.1063/1.1789627 |
0.391 |
|
| 2004 |
Ha S, Hu K, Skowronski M, Sumakeris JJ, Paisley MJ, Das MK. Stacking fault formation in SiC p-i-n diodes of (11-20) orientation Applied Physics Letters. 84: 5267-5269. DOI: 10.1063/1.1765209 |
0.768 |
|
| 2004 |
Ha S, Skowronski M, Lendenmann H. Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide p-i-n diodes Journal of Applied Physics. 96: 393-398. DOI: 10.1063/1.1756218 |
0.76 |
|
| 2004 |
Li Q, Polyakov AY, Skowronski M, Roth MD, Fanton MA, Snyder DW. Electrical nonuniformities and their impact on the electron mobility in semi-insulating SiC crystals Journal of Applied Physics. 96: 411-414. DOI: 10.1063/1.1739290 |
0.407 |
|
| 2004 |
Ha S, Chung HJ, Nuhfer NT, Skowronski M. Dislocation nucleation in 4H silicon carbide epitaxy Journal of Crystal Growth. 262: 130-138. DOI: 10.1016/J.Jcrysgro.2003.09.054 |
0.787 |
|
| 2003 |
Chung HJ, Liu JQ, Henry A, Skowronski M. Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing Materials Science Forum. 253-256. DOI: 10.4028/Www.Scientific.Net/Msf.433-436.253 |
0.429 |
|
| 2003 |
Neudeck PG, Powell JA, Spry DJ, Trunek AJ, Huang X, Vetter WM, Dudley M, Skowronski M, Liu JQ. Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas During Step-Free Surface Heteroepitaxy Materials Science Forum. 213-216. DOI: 10.4028/Www.Scientific.Net/Msf.433-436.213 |
0.441 |
|
| 2003 |
Liu JQ, Sanchez EK, Skowronski M. Surface-Damage-Induced Threading Dislocations in 6H-SiC Layers Grown by Physical Vapor Transport Journal of the Electrochemical Society. 150: G223. DOI: 10.1149/1.1545470 |
0.743 |
|
| 2003 |
Ha S, Benamara M, Skowronski M, Lendenmann H. Core structure and properties of partial dislocations in silicon carbide p-i-n diodes Applied Physics Letters. 83: 4957-4959. DOI: 10.1063/1.1633969 |
0.775 |
|
| 2003 |
Vetter W, Liu J, Dudley M, Skowronski M, Lendenmann H, Hallin C. Dislocation loops formed during the degradation of forward-biased 4H–SiC p-n junctions Materials Science and Engineering: B. 98: 220-224. DOI: 10.1016/S0921-5107(03)00040-0 |
0.428 |
|
| 2003 |
Chung HJ, Skowronski M. High-resolution X-ray diffraction and optical absorption study of heavily nitrogen-doped 4H-SiC crystals Journal of Crystal Growth. 259: 52-60. DOI: 10.1016/S0022-0248(03)01584-7 |
0.393 |
|
| 2003 |
Ma R, Zhang H, Ha S, Skowronski M. Integrated process modeling and experimental validation of silicon carbide sublimation growth Journal of Crystal Growth. 252: 523-537. DOI: 10.1016/S0022-0248(03)00944-8 |
0.744 |
|
| 2002 |
Ha SY, Vetter WM, Dudley M, Skowronski M. A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC Layers Materials Science Forum. 443-446. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.443 |
0.727 |
|
| 2002 |
Liu JQ, Sanchez EM, Skowronski M. Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC Materials Science Forum. 435-438. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.435 |
0.345 |
|
| 2002 |
Liu JQ, Sanchez EM, Skowronski M. Analysis of Sub-Surface Damage-Induced Threading Dislocations in Physical Vapor Transport Growth of 6H-SiC Materials Science Forum. 415-418. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.415 |
0.383 |
|
| 2002 |
Skowronski M. Growth-Induced Structural Defects in SiC PVT Boules Materials Science Forum. 385-390. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.385 |
0.364 |
|
| 2002 |
Ha SY, Mieszkowski P, Rowland LB, Skowronski M. Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial Layers Materials Science Forum. 231-234. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.231 |
0.769 |
|
| 2002 |
Liu JQ, Skowronski M, Hallin C, Söderholm R, Lendenmann H. Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes Materials Science Forum. 1281-1284. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.1281 |
0.339 |
|
| 2002 |
Sanchez EK, Ha S, Grim J, Skowronski M, Vetter WM, Dudley M, Bertke R, Mitchel WC. Assessment of Polishing-Related Surface Damage in Silicon Carbide Journal of the Electrochemical Society. 149: G131. DOI: 10.1149/1.1430416 |
0.806 |
|
| 2002 |
Chung HJ, Liu JQ, Skowronski M. Stacking fault formation in highly doped 4H-SiC epilayers during annealing Applied Physics Letters. 81: 3759-3761. DOI: 10.1063/1.1519961 |
0.409 |
|
| 2002 |
Kuhr TA, Liu J, Chung HJ, Skowronski M, Szmulowicz F. Spontaneous formation of stacking faults in highly doped 4H–SiC during annealing Journal of Applied Physics. 92: 5863-5871. DOI: 10.1063/1.1516250 |
0.774 |
|
| 2002 |
Skowronski M, Liu JQ, Vetter WM, Dudley M, Hallin C, Lendenmann H. Recombination-enhanced defect motion in forward-biased 4H–SiC p-n diodes Journal of Applied Physics. 92: 4699-4704. DOI: 10.1063/1.1505994 |
0.42 |
|
| 2002 |
Ha S, Skowronski M, Vetter WM, Dudley M. Basal plane slip and formation of mixed-tilt boundaries in sublimation-grown hexagonal polytype silicon carbide single crystals Journal of Applied Physics. 92: 778-785. DOI: 10.1063/1.1484229 |
0.787 |
|
| 2002 |
Liu JQ, Chung HJ, Kuhr T, Li Q, Skowronski M. Structural instability of 4H–SiC polytype induced by n-type doping Applied Physics Letters. 80: 2111-2113. DOI: 10.1063/1.1463203 |
0.796 |
|
| 2002 |
Liu JQ, Skowronski M, Hallin C, Söderholm R, Lendenmann H. Structure of recombination-induced stacking faults in high-voltage SiC p–n junctions Applied Physics Letters. 80: 749-751. DOI: 10.1063/1.1446212 |
0.379 |
|
| 2002 |
Sanchez EK, Liu JQ, Graef MD, Skowronski M, Vetter WM, Dudley M. Nucleation of threading dislocations in sublimation grown silicon carbide Journal of Applied Physics. 91: 1143-1148. DOI: 10.1063/1.1428088 |
0.759 |
|
| 2002 |
Liu JQ, Skowronski M, Neudeck PG, Powell JA. TEM Observation on Single Defect in SiC Microscopy and Microanalysis. 8: 1180-1181. DOI: 10.1017/S143192760210777X |
0.373 |
|
| 2002 |
Ha S, Mieszkowski P, Skowronski M, Rowland LB. Dislocation conversion in 4H silicon carbide epitaxy Journal of Crystal Growth. 244: 257-266. DOI: 10.1016/S0022-0248(02)01706-2 |
0.793 |
|
| 2001 |
Kuhr TA, Sanchez EK, Skowronski M, Vetter WM, Dudley M. Hexagonal voids and the formation of micropipes during SiC sublimation growth Journal of Applied Physics. 89: 4625-4630. DOI: 10.1063/1.1355716 |
0.803 |
|
| 2000 |
Ha SY, Rohrer GS, Skowronski M, Heydemann VD, Snyder DW. Plastic Deformation and Residual Stresses in SiC Boules Grown by PVT Materials Science Forum. 67-70. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.67 |
0.724 |
|
| 2000 |
Sanchez EM, Heydemann VD, Snyder DW, Rohrer GS, Skowronski M. Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide Materials Science Forum. 63-66. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.63 |
0.4 |
|
| 2000 |
Sanchez EM, Heydemann VD, Snyder DW, Rohrer GS, Skowronski M. Thermal Decomposition Cavities in Physical Vapor Transport Grown SiC Materials Science Forum. 55-58. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.55 |
0.303 |
|
| 2000 |
Ha SY, Nuhfer NT, Graef MD, Rohrer GS, Skowronski M. Origin of Threading Dislocation Arrays in SiC Boules Grown by PVT Materials Science Forum. 477-480. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.477 |
0.762 |
|
| 2000 |
Kuhr TA, Vetter WM, Dudley M, Skowronski M. X-ray Characterization of 3 inch Diameter 4H and 6H-SiC Experimental Wafers Materials Science Forum. 473-476. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.473 |
0.76 |
|
| 2000 |
Sanchez EK, Liu J, Vetter WM, Dudley M, Bertke R, Mitchel WC, Skowronski M. The Effect of Surface Finish on the Dislocation Density in Sublimation grown SiC Layers Mrs Proceedings. 640. DOI: 10.1557/Proc-640-H1.3 |
0.716 |
|
| 2000 |
Ha S, Nuhfer NT, Rohrer GS, De Graef M, Skowronski M. Origin of domain structure in hexagonal silicon carbide boules grown by the physical vapor transport method Journal of Crystal Growth. 220: 308-315. DOI: 10.1016/S0022-0248(00)00867-8 |
0.78 |
|
| 2000 |
Ha S, Nuhfer NT, Rohrer GS, de Graef M, Skowronski M. Identification of prismatic slip bands in 4H SiC boules grown by physical vapor transport Journal of Electronic Materials. 29: L5-L8. DOI: 10.1007/S11664-000-0194-1 |
0.783 |
|
| 2000 |
Sanchez EK, Kuhr T, Heydemann VD, Snyder DW, Rohrer GS, Skowronski M. Formation of thermal decomposition cavities in physical vapor transport of silicon carbide Journal of Electronic Materials. 29: 347-352. DOI: 10.1007/S11664-000-0075-7 |
0.791 |
|
| 1999 |
Dudley M, Huang XR, Huang W, Powell A, Wang S, Neudeck P, Skowronski M. The mechanism of micropipe nucleation at inclusions in silicon carbide Applied Physics Letters. 75: 784-786. DOI: 10.1063/1.124512 |
0.423 |
|
| 1999 |
Skierbiszewski C, Suski T, Leszczynski M, Shin M, Skowronski M, Bremser MD, Davis RF. Evidence for localized Si-donor state and its metastable properties in AlGaN Applied Physics Letters. 74: 3833-3835. DOI: 10.1063/1.124195 |
0.338 |
|
| 1999 |
Smith A, Feenstra R, Greve D, Shin M, Skowronski M, Neugebauer J, Northrup J. GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculations Surface Science. 423: 70-84. DOI: 10.1016/S0039-6028(98)00903-0 |
0.326 |
|
| 1998 |
Sanchez EK, Heydemann VD, Rohrer GS, Skowronski M, Solomon J, Capano MA, Mitchel WC. Structural characterization of SiC crystals grown by physical vapor transport Materials Science Forum. 264: 433-436. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.433 |
0.451 |
|
| 1998 |
Heydemann VD, Rohrer GS, Sanchez EM, Skowronski M. The Structural Evolution of Seed Surfaces During the Initial Stages of Physical Vapor Transport SiC Growth Materials Science Forum. 37-40. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.37 |
0.323 |
|
| 1998 |
Shin MC, Polyakov AY, Skowronski M, Rohrer GS, Wilson RG. Surface Defects in GaN and AlxGa1-xN Epilayers Deposited on Sapphire by Organometallic Vapor Phase Epitaxy Materials Science Forum. 1251-1254. DOI: 10.4028/Www.Scientific.Net/Msf.264-268.1251 |
0.36 |
|
| 1998 |
Polyakov AY, Smirnov NB, Govorkov AV, Greve DW, Skowronski M, Shin M, Redwing JM. Schottky diodes on MOCVD grown AlGaN films Mrs Internet Journal of Nitride Semiconductor Research. 3. DOI: 10.1557/S1092578300001095 |
0.346 |
|
| 1998 |
Smith AR, Ramachandran V, Feenstra RM, Greve DW, Ptak A, Myers T, Sarney W, Salamanca-Riba L, Shin M, Skowronski M. Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001) Mrs Internet Journal of Nitride Semiconductor Research. 3. DOI: 10.1557/S1092578300000843 |
0.376 |
|
| 1998 |
Smith AR, Ramachandran V, Feenstra RM, Greve DW, Shin M-, Skowronski M, Neugebauer J, Northrup JE. Wurtzite GaN surface structures studied by scanning tunneling microscopy and reflection high energy electron diffraction Journal of Vacuum Science and Technology. 16: 1641-1645. DOI: 10.1116/1.581134 |
0.339 |
|
| 1998 |
Polyakov AY, Smirnov NB, Govorkov AV, Shin M, Skowronski M, Greve DW. Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy Journal of Applied Physics. 84: 870-876. DOI: 10.1063/1.368149 |
0.38 |
|
| 1998 |
Hamdani F, Yeadon M, Smith DJ, Tang H, Kim W, Salvador A, Botchkarev AE, Gibson JM, Polyakov AY, Skowronski M, Morkoç H. Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy Journal of Applied Physics. 83: 983-990. DOI: 10.1063/1.366786 |
0.405 |
|
| 1998 |
Polyakov AY, Govorkov AV, Smirnov NB, Mil'vidskii MG, Redwing JM, Shin M, Skowronski M, Greve DW. Scanning electron microscope studies of AlGaN films grown by organometallic vapor phase epitaxy Solid-State Electronics. 42: 637-646. DOI: 10.1016/S0038-1101(97)00278-5 |
0.356 |
|
| 1998 |
Polyakov AY, Smirnov NB, Govorkov AV, Mil'vidskii MG, Redwing JM, Shin M, Skowronski M, Greve DW, Wilson RG. Properties of Si donors and persistent photoconductivity in AlGaN Solid-State Electronics. 42: 627-635. DOI: 10.1016/S0038-1101(97)00277-3 |
0.367 |
|
| 1997 |
Heydemann VD, Sanchez EK, Rohrer GS, Skowronski M. The Structural Evolution Of Lely Seeds During The Initial Stages Of Sic Sublimation Growth Mrs Proceedings. 483. DOI: 10.1557/Proc-483-295 |
0.729 |
|
| 1997 |
Smith AR, Ramachandran V, Feenstra RM, Greve DW, Neugebauer J, Northrup JE, Shin M, Skowronski M. Scanning tunneling microscopy observation of surface reconstruction of GaN on sapphire and 6H-SiC Mrs Proceedings. 482: 363. DOI: 10.1557/Proc-482-363 |
0.376 |
|
| 1997 |
Goorsky MS, Polyakov AY, Skowronski M, Shin M, Greve DW. High-resolution x-ray diffraction analysis of GaN-based heterostructures grown by OMVPE Materials Research Society Symposium - Proceedings. 449: 489-494. DOI: 10.1557/Proc-449-489 |
0.425 |
|
| 1997 |
Qian W, Skowronski M, Kaspi R, De Graef M, Dravid VP. Nucleation of misfit and threading dislocations during epitaxial growth of GaSb on GaAs(001) substrates Journal of Applied Physics. 81: 7268-7272. DOI: 10.1063/1.365324 |
0.466 |
|
| 1997 |
Polyakov AY, Shin M, Qian W, Skowronski M, Greve DW, Wilson RG. Growth of AlBN solid solutions by organometallic vapor-phase epitaxy Journal of Applied Physics. 81: 1715-1719. DOI: 10.1063/1.364066 |
0.363 |
|
| 1997 |
Polyakov A, Shin M, Skowronski M, Wilson R, Greve D, Pearton S. Ion implantation of Si, Mg and C into Al0.12Ga0.88N Solid-State Electronics. 41: 703-706. DOI: 10.1016/S0038-1101(96)00182-7 |
0.334 |
|
| 1997 |
Giocondi J, Rohrer GS, Skowronski M, Balakrishna V, Augustine G, Hobgood HM, Hopkins RH. An atomic force microscopy study of super-dislocation/micropipe complexes on the 6H-SiC(0 0 0 1) growth surface Journal of Crystal Growth. 181: 351-362. DOI: 10.1016/S0022-0248(97)00303-5 |
0.415 |
|
| 1997 |
Polyakov AY, Shin M, Skowronski M, Greve DW, Wilson RG, Govorkov AV, Desrosiers RM. Growth of GaBN ternary solutions by organometallic vapor phase epitaxy Journal of Electronic Materials. 26: 237-242. DOI: 10.1007/S11664-997-0157-X |
0.368 |
|
| 1996 |
Polyakov AY, Shin M, Greve DW, Skowronski M, Wilson RG. High Resistivity AlxGa1−xN Layers Grown by MOCVD Mrs Internet Journal of Nitride Semiconductor Research. 1. DOI: 10.1557/S1092578300002088 |
0.396 |
|
| 1996 |
Polyakov AY, Govorkov AV, Smirnov NB, Shin M, Skowronski M, Greve DW. Studies of Electrically and Recombination Active Centers in Undoped GaN Grown by OMVPE Mrs Proceedings. 449. DOI: 10.1557/Proc-449-591 |
0.376 |
|
| 1996 |
Goorsky M, Polyakov A, Skowronski M, Shin M, Greve D. High Resolution X-ray Diffraction Analysis of GaN-Based Heterostructures Grown by OMVPE Mrs Proceedings. 449. DOI: 10.1557/PROC-449-489 |
0.313 |
|
| 1996 |
Shin M, Polyakov AY, Qian W, Skowronski M, Greve DW, Wilson RG. Growth of AlBN Solid Solution by OMVPE Mrs Proceedings. 449. DOI: 10.1557/Proc-449-141 |
0.369 |
|
| 1996 |
Sanchez EK, Graef MD, Qian W, Skowronski M. Hrtem Characterization of 6H-15R Polytype Boundaries in Silicon Carbide Grown by Physical Vapor Transport Mrs Proceedings. 442: 655. DOI: 10.1557/Proc-442-655 |
0.694 |
|
| 1996 |
Shin M, Polyakov AY, Skowronski M, Greve DW, Wilson RG, Freitas JA. Factors Influencing the Electrical and Optical Properties of Aigan Layers on Sapphire Mrs Proceedings. 423. DOI: 10.1557/Proc-423-643 |
0.341 |
|
| 1996 |
Giocondi J, Rohrer GS, Skowronski M, Balakrishna V, Augustine G, Hobgood HM, Hopkins RH. The Relationship Between Micropipes and Screw Dislocations in Pvt Grown 6H-Sic Mrs Proceedings. 423. DOI: 10.1557/Proc-423-539 |
0.394 |
|
| 1996 |
Jenny JR, Skowronski M, Mitchel WC, Smith SR, Evwaraye AO, Hobgood HM, Augustine G, Hopkins RH. Electrical and optical investigation of the position of vanadium related defects in the 4H and 6H SiC bandgaps Mrs Proceedings. 423. DOI: 10.1557/Proc-423-507 |
0.326 |
|
| 1996 |
Gian W, Skowronski M, Rohrer GS. Structural Defects and Their Relationship to Nucleation of Gan Thin Films Mrs Proceedings. 423. DOI: 10.1557/Proc-423-475 |
0.437 |
|
| 1996 |
Polyakov AY, Shin M, Freitas JA, Skowronski M, Greve DW, Wilson RG. On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy Journal of Applied Physics. 80: 6349-6354. DOI: 10.1063/1.363653 |
0.357 |
|
| 1996 |
Jenny JR, Skowronski M, Mitchel WC, Hobgood HM, Glass RC, Augustine G, Hopkins RH. Optical And Electrical Characterization Of Boron Impurities In Silicon Carbide Grown By Physical Vapor Transport Journal of Applied Physics. 79: 2326-2331. DOI: 10.1063/1.361158 |
0.347 |
|
| 1995 |
Rohrer GS, Payne J, Qian W, Skowronski M, Doverspike K, Rowland LB, Gaskill DK. A Microscopic Evaluation of the Surface Structure of OMVPE Deposited α-GaN Epilayers Mrs Proceedings. 395. DOI: 10.1557/Proc-395-381 |
0.41 |
|
| 1995 |
Kaspi R, Evans KR, Reynolds DC, Brown J, Skowronski M. Surfactant-Mediated Growth of Aigaas by Molecular Beam Epitaxy Mrs Proceedings. 379. DOI: 10.1557/Proc-379-79 |
0.37 |
|
| 1995 |
Park Y, Skowronski M. Atomic Structure of Deep Level Defects in Dimethylaluminum Methoxide-Doped GaAs Mrs Proceedings. 378. DOI: 10.1557/Proc-378-159 |
0.352 |
|
| 1995 |
Evans KR, Kaspi R, Ehret JE, Skowronski M, Jones CR. Surface chemistry evolution during molecular beam epitaxy growth of InGaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 1820-1823. DOI: 10.1116/1.587819 |
0.363 |
|
| 1995 |
Yu PW, Park Y, Skowronski M, Timmons ML. Deep-center oxygen-related photoluminescence in GaAs doped with dimethylaluminum methoxide during organometallic vapor phase epitaxy Journal of Applied Physics. 78: 2015-2021. DOI: 10.1063/1.360177 |
0.359 |
|
| 1995 |
Jenny JR, Skowronski M, Mitchel WC, Hobgood HM, Glass RC, Augustine G, Hopkins RH. On the compensation mechanism in high‐resistivity 6H–SiC doped with vanadium Journal of Applied Physics. 78: 3839-3842. DOI: 10.1063/1.359899 |
0.397 |
|
| 1995 |
Qian W, Rohrer GS, Skowronski M, Doverspike K, Rowland LB, Gaskill DK. Open‐core screw dislocations in GaN epilayers observed by scanning force microscopy and high‐resolution transmission electron microscopy Applied Physics Letters. 67: 2284-2286. DOI: 10.1063/1.115127 |
0.439 |
|
| 1995 |
Qian W, Skowronski M, Graef MD, Doverspike K, Rowland LB, Gaskill DK. Microstructural characterization of α‐GaN films grown on sapphire by organometallic vapor phase epitaxy Applied Physics Letters. 66: 1252-1254. DOI: 10.1063/1.113253 |
0.41 |
|
| 1995 |
Hobgood HM, Glass RC, Augustine G, Hopkins RH, Jenny J, Skowronski M, Mitchel WC, Roth M. Semi‐insulating 6H–SiC grown by physical vapor transport Applied Physics Letters. 66: 1364-1366. DOI: 10.1063/1.113202 |
0.361 |
|
| 1995 |
Samara G, Skowronski M, Mitchel W. Pressure as a probe of deep levels and defects in semiconductors: Antisites and oxygen centers in GaAs Journal of Physics and Chemistry of Solids. 56: 625-629. DOI: 10.1016/0022-3697(94)00253-3 |
0.318 |
|
| 1995 |
Qian W, Skowronski M, Doverspike K, Rowland LB, Gaskill DK. Observation of nanopipes in α-GaN crystals Journal of Crystal Growth. 151: 396-400. DOI: 10.1016/0022-0248(95)00082-8 |
0.388 |
|
| 1994 |
Park Y, Skowronski M. Compensation of shallow donors in dimethylaluminum methoxide‐doped GaAs Journal of Applied Physics. 76: 5813-5819. DOI: 10.1063/1.358394 |
0.328 |
|
| 1994 |
Park Y, Skowronski M. Photoluminescence of GaAs doped with dimethylaluminum methoxide during organometallic vapor phase epitaxy Journal of Applied Physics. 75: 2640-2643. DOI: 10.1063/1.356240 |
0.357 |
|
| 1994 |
Park Y, Skowronski M, Rosseel T. Incorporation of aluminum and oxygen in dimethylaluminum methoxide doped GaAs during organometallic vapor phase epitaxy Journal of Crystal Growth. 137: 442-451. DOI: 10.1016/0022-0248(94)90983-0 |
0.349 |
|
| 1994 |
Philips B, Norman A, Seong T, Mahajan S, Booker G, Skowronski M, Harbison J, Keramidas V. Mechanism for CuPt-type ordering in mixed III–V epitaxial layers Journal of Crystal Growth. 140: 249-263. DOI: 10.1016/0022-0248(94)90297-6 |
0.352 |
|
| 1993 |
McFadden R, Skowronski M, Mahajan S. Influence of Growth Temperature on Ordering in InGaAs Grown on (001) InP USING Tertiarybutylarsine Source MOCVD Mrs Proceedings. 326. DOI: 10.1557/Proc-326-287 |
0.32 |
|
| 1993 |
Shah M, Manasreh M, Kaspi R, Yen MY, Philips BA, Skowronski M, Shinar J. Band Edge Optical Absorption of Molecular Beam Epitaxial GaSb Grown on Semi-Insulating GaAs Substrate Mrs Proceedings. 325. DOI: 10.1557/Proc-325-449 |
0.35 |
|
| 1993 |
Park Y, Skowronski M, Rosseel T, Manasreh M. Oxygen Doping of GaAs During Omvpe Controlled Introduction of Impurity Complexes Mrs Proceedings. 325. DOI: 10.1557/Proc-325-293 |
0.34 |
|
| 1993 |
Evwaraye AO, Smith SR, Skowronski M, Mitchel WC. Observation of surface defects in 6H‐SiC wafers Journal of Applied Physics. 74: 5269-5271. DOI: 10.1063/1.354269 |
0.373 |
|
| 1992 |
Park Y, Skowronski M, Rosseel TM. Alkoxide Doping of GaAs During Organometallic Vapor Phase Epitaxy Mrs Proceedings. 282. DOI: 10.1557/Proc-282-75 |
0.321 |
|
| 1991 |
Skowronski M, Kremer RE. Effects of thermal annealing on oxygen related centers in gaas Journal of Applied Physics. 69: 7825-7830. DOI: 10.1063/1.347513 |
0.314 |
|
| 1991 |
Neild ST, Skowronski M, Lagowski J. Signature of the gallium-oxygen-gallium defect in GaAs by deep level transient spectroscopy measurements Applied Physics Letters. 58: 859-861. DOI: 10.1063/1.104513 |
0.323 |
|
| 1987 |
Skowronski M, Lagowski J, Milshtein M, Kang CH, Dabkowski FP, Hennel A, Gatos HC. Effect of plastic deformation on electronic properties of GaAs Journal of Applied Physics. 62: 3791-3798. DOI: 10.1063/1.339218 |
0.352 |
|
| 1986 |
Lagowski J, Gatos HC, Kang CH, Skowronski M, Ko KY, Lin DG. Inverted thermal conversion—GaAs, a new alternative material for integrated circuits Applied Physics Letters. 49: 892-894. DOI: 10.1063/1.97527 |
0.364 |
|
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