| Year |
Citation |
Score |
| 2019 |
Mascarenhas A, Kurtz S, Kibbler A, Olson JM. Polarized band-edge photoluminescence and ordering in Ga0.52In0.48P. Physical Review Letters. 63: 2108-2111. PMID 10040764 DOI: 10.1103/Physrevlett.63.2108 |
0.422 |
|
| 2019 |
Zhang Y, Mascarenhas A. Conduction- and valence-band effective masses in spontaneously ordered GaInP2. Physical Review. B, Condensed Matter. 51: 13162-13173. PMID 9978114 DOI: 10.1103/Physrevb.51.13162 |
0.416 |
|
| 2017 |
Mascarenhas A, Fluegel B, Bhusal L. Ferroelastic modulation and the Bloch formalism. Science Advances. 3: e1602754. PMID 28630910 DOI: 10.1126/Sciadv.1602754 |
0.364 |
|
| 2017 |
Christian TM, Beaton DA, Perkins JD, Fluegel B, Alberi K, Mascarenhas A. Bismuth interstitial impurities and the optical properties of GaP 1- x - y Bi x N y Japanese Journal of Applied Physics. 56: 111201. DOI: 10.7567/Jjap.56.111201 |
0.326 |
|
| 2017 |
Christian TM, Alberi K, Beaton DA, Fluegel B, Mascarenhas A. Spectrally resolved localized states in GaAs1− x Bi x Japanese Journal of Applied Physics. 56: 35801. DOI: 10.7567/Jjap.56.035801 |
0.404 |
|
| 2016 |
Christian TM, Fluegel B, Beaton DA, Alberi K, Mascarenhas A. Bismuth-induced Raman modes in GaP1-xBix Japanese Journal of Applied Physics. 55: 108002. DOI: 10.7567/Jjap.55.108002 |
0.402 |
|
| 2016 |
Alberi K, Fluegel B, Crooker SA, Mascarenhas A. Magnetic field stabilized electron-hole liquid in indirect-band-gapAlxGa1−xAs Physical Review B. 93. DOI: 10.1103/Physrevb.93.075310 |
0.35 |
|
| 2016 |
Joshya RS, Rajaji V, Narayana C, Mascarenhas A, Kini RN. Anharmonicity in light scattering by optical phonons in GaAs1-xBix Journal of Applied Physics. 119: 205706. DOI: 10.1063/1.4952381 |
0.353 |
|
| 2015 |
Fluegel B, Mialitsin AV, Beaton DA, Reno JL, Mascarenhas A. Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors. Nature Communications. 6: 7136. PMID 26017853 DOI: 10.1038/Ncomms8136 |
0.328 |
|
| 2015 |
Fluegel B, Alberi K, Reno J, Mascarenhas A. Spectroscopic determination of the bandgap crossover composition in MBE-grown AlxGa1−xAs Japanese Journal of Applied Physics. 54: 042402. DOI: 10.7567/Jjap.54.042402 |
0.428 |
|
| 2015 |
Christian TM, Beaton DA, Alberi K, Fluegel B, Mascarenhas A. Mysterious absence of pair luminescence in gallium phosphide bismide Applied Physics Express. 8. DOI: 10.7567/Apex.8.061202 |
0.419 |
|
| 2015 |
Beaton DA, Mascarenhas A, Alberi K. Insight into the epitaxial growth of high optical quality GaAs1–xBix Journal of Applied Physics. 118: 235701. DOI: 10.1063/1.4937574 |
0.358 |
|
| 2015 |
Vaisakh CP, Mascarenhas A, Kini RN. THz generation mechanisms in the semiconductor alloy, GaAs1−xBix Journal of Applied Physics. 118: 165702. DOI: 10.1063/1.4933290 |
0.378 |
|
| 2014 |
Alberi K, Mialitsin AV, Fluegel B, Crooker SA, Reno JL, Mascarenhas A. Magnetic field-induced direct–indirect crossover in AlxGa1−xAs Applied Physics Express. 7: 111201. DOI: 10.7567/Apex.7.111201 |
0.322 |
|
| 2014 |
Alberi K, Fluegel B, DiNezza MJ, Liu S, Zhang Y, Mascarenhas A. Probing carrier lifetimes at dislocations in epitaxial CdTe Applied Physics Express. 7: 065503. DOI: 10.7567/Apex.7.065503 |
0.315 |
|
| 2014 |
Joshya RS, Ptak AJ, France R, Mascarenhas A, Kini RN. Resonant state due to Bi in the dilute bismide alloy GaAs1-xBix Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.165203 |
0.351 |
|
| 2014 |
Haegel NM, Christian T, Scandrett C, Norman AG, Mascarenhas A, Misra P, Liu T, Sukiasyan A, Pickett E, Yuen H. Doping dependence and anisotropy of minority electron mobility in molecular beam epitaxy-grown p type GaInP Applied Physics Letters. 105. DOI: 10.1063/1.4902316 |
0.345 |
|
| 2014 |
Joshya RS, Ptak AJ, France R, Mascarenhas A, Kini RN. Coherent acoustic phonon generation in GaAs1-xBi x Applied Physics Letters. 104. DOI: 10.1063/1.4867702 |
0.337 |
|
| 2014 |
Mukherjee K, Beaton DA, Mascarenhas A, Bulsara MT, Fitzgerald EA. Effects of dislocation strain on the epitaxy of lattice-mismatched AlGaInP layers Journal of Crystal Growth. 392: 74-80. DOI: 10.1016/J.Jcrysgro.2014.01.058 |
0.372 |
|
| 2013 |
Beaton DA, Alberi K, Fluegel B, Mascarenhas A, Reno JL. Precise Determination of the Direct–Indirect Band Gap Energy Crossover Composition in AlxGa1-xAs Applied Physics Express. 6: 71201. DOI: 10.7567/Apex.6.071201 |
0.439 |
|
| 2013 |
Mialitsin AV, Mascarenhas A. Raman Scattering Signature of a Localized-to-Delocalized Transition at the Inception of a Dilute Abnormal GaAs1-xNx Alloy Applied Physics Express. 6: 52401. DOI: 10.7567/Apex.6.052401 |
0.368 |
|
| 2013 |
Beaton DA, Christian T, Alberi K, Mascarenhas A, Mukherjee K, Fitzgerald EA. Determination of the direct to indirect bandgap transition composition in AlxIn1-xP Journal of Applied Physics. 114. DOI: 10.1063/1.4833540 |
0.445 |
|
| 2013 |
Christian TM, Beaton DA, Mukherjee K, Alberi K, Fitzgerald EA, Mascarenhas A. Amber-green light-emitting diodes using order-disorder Al xIn1-xP heterostructures Journal of Applied Physics. 114. DOI: 10.1063/1.4818477 |
0.314 |
|
| 2013 |
Mukherjee K, Beaton DA, Christian T, Jones EJ, Alberi K, Mascarenhas A, Bulsara MT, Fitzgerald EA. Growth, microstructure, and luminescent properties of direct-bandgap InAlP on relaxed InGaAs on GaAs substrates Journal of Applied Physics. 113. DOI: 10.1063/1.4804264 |
0.381 |
|
| 2012 |
Fluegel B, Alberi K, Beaton DA, Crooker SA, Ptak AJ, Mascarenhas A. Evolution of superclusters and delocalized states in GaAs1−xNx Physical Review B. 86. DOI: 10.1103/Physrevb.86.205203 |
0.37 |
|
| 2012 |
Mialitsin A, Fluegel B, Ptak A, Mascarenhas A. Mechanism of asymmetric lineshape broadening in GaAs 1-xN x Raman spectra Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.045209 |
0.4 |
|
| 2012 |
Alberi K, Fluegel B, Beaton DA, Ptak AJ, Mascarenhas A. Localization-delocalization transition of electrons at the percolation threshold of semiconductor GaAs 1-xN x alloys: The appearance of a mobility edge Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.041201 |
0.385 |
|
| 2012 |
Mialitsin A, Schmult S, Solov’yov IA, Fluegel B, Mascarenhas A. Eigenstate localization in an asymmetric coupled quantum well pair Superlattices and Microstructures. 51: 834-841. DOI: 10.1016/J.Spmi.2012.03.019 |
0.318 |
|
| 2012 |
Beaton DA, Ptak AJ, Alberi K, Mascarenhas A. Quaternary bismide alloy ByGa 1 -yAs 1 -x Bix lattice matched to GaAs Journal of Crystal Growth. 351: 37-40. DOI: 10.1016/J.Jcrysgro.2012.04.028 |
0.429 |
|
| 2012 |
Ptak AJ, Beaton DA, Mascarenhas A. Growth of BGaAs by molecular-beam epitaxy and the effects of a bismuth surfactant Journal of Crystal Growth. 351: 122-125. DOI: 10.1016/J.Jcrysgro.2012.04.026 |
0.351 |
|
| 2011 |
Fluegel B, Alberi K, Bhusal L, Mascarenhas A, Snoke DW, Karunasiri G, Pfeiffer LN, West K. Exciton pattern generation in GaAs/AlxGa1-xAs multiple quantum wells Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.195320 |
0.305 |
|
| 2011 |
Alberi K, Fluegel B, Steiner MA, France R, Olavarria W, Mascarenhas A. Direct-indirect crossover in Ga xIn 1-xP alloys Journal of Applied Physics. 110. DOI: 10.1063/1.3663439 |
0.338 |
|
| 2011 |
Fluegel B, Kini RN, Ptak AJ, Beaton D, Alberi K, Mascarenhas A. Shubnikov-de Haas measurement of electron effective mass in GaAs1−xBix Applied Physics Letters. 99: 162108. DOI: 10.1063/1.3655198 |
0.385 |
|
| 2010 |
Wang K, Chen JJ, Zeng ZM, Tarr J, Zhou WL, Zhang Y, Yan YF, Jiang CS, Pern J, Mascarenhas A. Synthesis and photovoltaic effect of vertically aligned ZnO/ZnS core/shell nanowire arrays Applied Physics Letters. 96: 123105. DOI: 10.1063/1.3367706 |
0.309 |
|
| 2009 |
Fluegel B, Mascarenhas A, Geisz JF. Polarized photoluminescence from point emitters in orderedGaxIn1−xP Physical Review B. 80. DOI: 10.1103/Physrevb.80.125333 |
0.404 |
|
| 2009 |
Zhang Y, Mascarenhas A, Wei S, Wang L. Comparison of atomistic simulations and statistical theories for variable degree of long-range order in semiconductor alloys Physical Review B. 80. DOI: 10.1103/Physrevb.80.045206 |
0.362 |
|
| 2009 |
Bhusal L, Ptak AJ, Mascarenhas A. Contactless electroreflectance studies of ultra-dilute GaAs1?xBix alloys Semiconductor Science and Technology. 24: 35018. DOI: 10.1088/0268-1242/24/3/035018 |
0.451 |
|
| 2009 |
Bhusal L, Fluegel B, Steiner MA, Mascarenhas A. Ordering induced direct-indirect transformation in unstrained Ga xIn1-xP for 0.76≤x0.78 Journal of Applied Physics. 106. DOI: 10.1063/1.3266175 |
0.317 |
|
| 2009 |
Steiner MA, Bhusal L, Geisz JF, Norman AG, Romero MJ, Olavarria WJ, Zhang Y, Mascarenhas A. CuPt ordering in high bandgap Gax In1-x P alloys on relaxed GaAsP step grades Journal of Applied Physics. 106. DOI: 10.1063/1.3213376 |
0.365 |
|
| 2009 |
Kini RN, Bhusal L, Ptak AJ, France R, Mascarenhas A. Electron hall mobility in GaAsBi Journal of Applied Physics. 106. DOI: 10.1063/1.3204670 |
0.328 |
|
| 2009 |
Zhang Y, Jiang C-, Friedman DJ, Geisz JF, Mascarenhas A. Tailoring the electronic properties of GaxIn1-xP beyond simply varying alloy composition Applied Physics Letters. 94: 91113. DOI: 10.1063/1.3094918 |
0.349 |
|
| 2009 |
Mascarenhas A, Kini R, Zhang Y, France R, Ptak A. Comparison of the dilute bismide and nitride alloys GaAsBi and GaAsN Physica Status Solidi (B) Basic Research. 246: 504-507. DOI: 10.1002/Pssb.200880547 |
0.38 |
|
| 2008 |
Forrest RL, Golding TD, Moss SC, Zhang Y, Geisz JF, Olson JM, Mascarenhas A, Ernst P, Geng C. X-ray diffraction and excitation photoluminescence analysis of ordered GaInP (Physical Review B - Condensed Matter and Materials Physics (1998) 58 (15355)) Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.119901 |
0.301 |
|
| 2008 |
Francoeur S, Tixier S, Young E, Tiedje T, Mascarenhas A. Bi isoelectronic impurities in GaAs Physical Review B. 77: 85209. DOI: 10.1103/Physrevb.77.085209 |
0.7 |
|
| 2008 |
Kini RN, Mascarenhas A, France R, Ptak AJ. Low temperature photoluminescence from dilute bismides Journal of Applied Physics. 104. DOI: 10.1063/1.3041479 |
0.434 |
|
| 2008 |
Wang K, Chen J, Zhou W, Zhang Y, Yan Y, Pern J, Mascarenhas A. Direct Growth of Highly Mismatched Type II ZnO/ZnSe Core/Shell Nanowire Arrays on Transparent Conducting Oxide Substrates for Solar Cell Applications Advanced Materials. 20: 3248-3253. DOI: 10.1002/Adma.200800145 |
0.325 |
|
| 2007 |
Fluegel B, Mascarenhas A, Ptak AJ, Tixier S, Young EC, Tiedje T. E+transition inGaAs1−xNxandGaAs1−xBixdue to isoelectronic-impurity-induced perturbation of the conduction band Physical Review B. 76. DOI: 10.1103/Physrevb.76.155209 |
0.415 |
|
| 2007 |
Karaiskaj D, Mascarenhas A, Klem JF, Volz K, Stolz W, Adamcyk M, Tiedje T. Excitons bound to nitrogen pairs in GaAs as seen by photoluminescence of high spectral and spatial resolution Physical Review B. 76. DOI: 10.1103/Physrevb.76.125209 |
0.39 |
|
| 2007 |
Yoon S, Seong MJ, Fluegel B, Mascarenhas A, Tixier S, Tiedje T. Photogenerated plasmons in GaAs1−xBix Applied Physics Letters. 91: 082101. DOI: 10.1063/1.2770760 |
0.409 |
|
| 2007 |
Tan PH, Xu ZY, Luo XD, Ge WK, Zhang Y, Mascarenhas A, Xin HP, Tu CW. Unusual carrier thermalization in a dilute GaAs1−xNx alloy Applied Physics Letters. 90: 061905. DOI: 10.1063/1.2454552 |
0.402 |
|
| 2006 |
Fluegel B, Francoeur S, Mascarenhas A, Tixier S, Young EC, Tiedje T. Giant spin-orbit bowing in GaAs1-xBix. Physical Review Letters. 97: 067205. PMID 17026200 DOI: 10.1103/PhysRevLett.97.067205 |
0.626 |
|
| 2006 |
Zhang Y, Dalpian GM, Fluegel B, Wei SH, Mascarenhas A, Huang XY, Li J, Wang LW. Novel approach to tuning the physical properties of organic-inorganic hybrid semiconductors. Physical Review Letters. 96: 026405. PMID 16486607 DOI: 10.1103/Physrevlett.96.026405 |
0.383 |
|
| 2006 |
Zhang Y, Mascarenhas A, Wang L. Systematic approach to distinguishing a perturbed host state from an impurity state in a supercell calculation for a doped semiconductor: Using GaP:N as an example Physical Review B. 74. DOI: 10.1103/Physrevb.74.041201 |
0.355 |
|
| 2006 |
Karaiskaj D, Mascarenhas A, Adamcyk M, Young EC, Tiedje T. Ultranarrow photoluminescence transitions of nitrogen cluster bound excitons in dilute GaAsN Physical Review B. 74. DOI: 10.1103/Physrevb.74.035208 |
0.372 |
|
| 2006 |
Tan P, Luo X, Xu Z, Zhang Y, Mascarenhas A, Xin H, Tu C, Ge W. Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1−xNx alloys: A microphotoluminescence study Physical Review B. 73. DOI: 10.1103/Physrevb.73.205205 |
0.449 |
|
| 2006 |
Tan PH, Xu ZY, Luo XD, Ge WK, Zhang Y, Mascarenhas A, Xin HP, Tu CW. Resonant Raman scattering with the E+ band in a dilute GaAs1−xNx alloy (x=0.1%) Applied Physics Letters. 89: 101912. DOI: 10.1063/1.2345605 |
0.444 |
|
| 2005 |
Smith S, Dhere R, Gessert T, Stradins P, Wang T, Ramanathan K, Noufi R, Mascarenhas A. Sub-micron Optoelectronic Properties of Polycrystalline Solar Cell Materials Mrs Proceedings. 865. DOI: 10.1557/Proc-865-F1.5 |
0.308 |
|
| 2005 |
Yoon S, Geisz JF, Han S, Mascarenhas A, Rübhausen M, Schulz B. Resonant Raman scattering spectroscopy of Ga P1-x Nx and Ga As1-x Nx in the ultraviolet range Physical Review B. 71: 155208. DOI: 10.1103/Physrevb.71.155208 |
0.366 |
|
| 2005 |
Ma BS, Su FH, Ding K, Li GH, Zhang Y, Mascarenhas A, Xin HP, Tu CW. Pressure behavior of the alloy band edge and nitrogen-related centers inGaAs0.999N0.001 Physical Review B. 71. DOI: 10.1103/Physrevb.71.045213 |
0.392 |
|
| 2005 |
Tixier S, Webster SE, Young EC, Tiedje T, Francoeur S, Mascarenhas A, Wei P, Schiettekatte F. Band gaps of the dilute quaternary alloys GaNxAs1−x−yBiy and Ga1−yInyNxAs1−x Applied Physics Letters. 86: 112113. DOI: 10.1063/1.1886254 |
0.702 |
|
| 2005 |
Seong M, Francoeur S, Yoon S, Mascarenhas A, Tixier S, Adamcyk M, Tiedje T. Bi-induced vibrational modes in GaAsBi Superlattices and Microstructures. 37: 394-400. DOI: 10.1016/J.Spmi.2005.02.004 |
0.633 |
|
| 2004 |
Francoeur S, Klem JF, Mascarenhas A. Optical spectroscopy of single impurity centers in semiconductors. Physical Review Letters. 93: 067403. PMID 15323662 DOI: 10.1103/PhysRevLett.93.067403 |
0.636 |
|
| 2004 |
Fluegel B, Zhang Y, Mascarenhas A, Huang X, Li J. Electronic properties of hybrid organic–inorganic semiconductors Physical Review B. 70. DOI: 10.1103/Physrevb.70.205308 |
0.388 |
|
| 2004 |
Caha O, Křápek V, Holý V, Moss SC, Li JH, Norman AG, Mascarenhas A, Reno JL, Stangl J, Meduňa M. X-ray diffraction on laterally modulated (InAs)n∕(AlAs)m short-period superlattices Journal of Applied Physics. 96: 4833-4838. DOI: 10.1063/1.1781768 |
0.314 |
|
| 2004 |
Wei P, Tixier S, Chicoine M, Francoeur S, Mascarenhas A, Tiedje T, Schiettekatte F. Ion beam characterization of GaAs1−x−yNxBiy epitaxial layers Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 219: 671-675. DOI: 10.1016/J.Nimb.2004.01.140 |
0.663 |
|
| 2003 |
Huang X, Li J, Zhang Y, Mascarenhas A. From 1D chain to 3D network: tuning hybrid II-VI nanostructures and their optical properties. Journal of the American Chemical Society. 125: 7049-55. PMID 12783559 DOI: 10.1021/Ja0343611 |
0.312 |
|
| 2003 |
Xu ZY, Luo XD, Yang XD, Tan PH, Yang CL, Ge WK, Zhang Y, Mascarenhas A, Xin HP, Tu CW. Optical Study of Localized and Delocalized States in GaAsN/GaAs Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y5.68 |
0.413 |
|
| 2003 |
Zhang Y, Mascarenhas A. Effects Due to and Derived from Spontaneous Ordering in III-V Semiconductor Alloys Mrs Proceedings. 794. DOI: 10.1557/Proc-63-T10.1 |
0.344 |
|
| 2003 |
Karazhanov SZ, Zhang Y, Wang L, Mascarenhas A, Deb S. Resonant defect states and strong lattice relaxation of oxygen vacancies inWO3 Physical Review B. 68. DOI: 10.1103/Physrevb.68.233204 |
0.384 |
|
| 2003 |
Mascarenhas A, Seong MJ, Yoon S, Verley JC, Geisz JF, Hanna MC. Evolution of electronic states inGaAs1−xNxprobed by resonant Raman spectroscopy Physical Review B. 68: 233201. DOI: 10.1103/Physrevb.68.233201 |
0.423 |
|
| 2003 |
Smith S, Mascarenhas A, Olson JM. Magnetophotoluminescence of quantum confined states in orderedGaxIn1−xPwith 200 nanometer resolution Physical Review B. 68. DOI: 10.1103/Physrevb.68.153202 |
0.314 |
|
| 2003 |
Zhang Y, Fluegel B, Hanna MC, Mascarenhas A, Wang L, Wang YJ, Wei X. Impurity perturbation to the host band structure and recoil of the impurity state Physical Review B. 68. DOI: 10.1103/Physrevb.68.075210 |
0.371 |
|
| 2003 |
Francoeur S, Seong MJ, Hanna MC, Geisz JF, Mascarenhas A, Xin HP, Tu CW. Origin of the nitrogen-induced optical transitions inGaAs1−xNx Physical Review B. 68. DOI: 10.1103/Physrevb.68.075207 |
0.708 |
|
| 2003 |
Smith S, Mascarenhas A, Ahrenkiel SP, Hanna MC, Olson JM. Spatially resolved below-gap emission in partially orderedGaxIn1−xPalloys Physical Review B. 68. DOI: 10.1103/Physrevb.68.035310 |
0.371 |
|
| 2003 |
Yoon S, Seong MJ, Geisz JF, Duda A, Mascarenhas A. Evolution of electronic states inGaP1−xNxstudied by resonant Raman scattering spectroscopy Physical Review B. 67. DOI: 10.1103/Physrevb.67.235209 |
0.386 |
|
| 2003 |
Seong MJ, Cheong HM, Yoon S, Geisz JF, Mascarenhas A. Symmetry ofGaAs1−xNxconduction-band minimum probed by resonant Raman scattering Physical Review B. 67. DOI: 10.1103/Physrevb.67.153301 |
0.424 |
|
| 2003 |
Wang YJ, Wei X, Zhang Y, Mascarenhas A, Xin HP, Hong YG, Tu CW. Evolution of the electron localization in a nonconventional alloy system GaAs1−xNx probed by high-magnetic-field photoluminescence Applied Physics Letters. 82: 4453-4455. DOI: 10.1063/1.1584789 |
0.323 |
|
| 2003 |
Francoeur S, Seong M, Mascarenhas A, Tixier S, Adamcyk M, Tiedje T. Band gap of GaAs1−xBix, 0Applied Physics Letters. 82: 3874-3876. DOI: 10.1063/1.1581983 |
0.709 |
|
| 2003 |
Tixier S, Adamcyk M, Tiedje T, Francoeur S, Mascarenhas A, Wei P, Schiettekatte F. Molecular beam epitaxy growth of GaAs1−xBix Applied Physics Letters. 82: 2245-2247. DOI: 10.1063/1.1565499 |
0.677 |
|
| 2003 |
Luo XD, Huang JS, Xu ZY, Yang CL, Liu J, Ge WK, Zhang Y, Mascarenhas A, Xin HP, Tu CW. Alloy states in dilute GaAs1−xNx alloys (x<1%) Applied Physics Letters. 82: 1697-1699. DOI: 10.1063/1.1560872 |
0.428 |
|
| 2003 |
Seong MJ, Mićić OI, Nozik AJ, Mascarenhas A, Cheong HM. Size-dependent Raman study of InP quantum dots Applied Physics Letters. 82: 185-187. DOI: 10.1063/1.1535272 |
0.304 |
|
| 2003 |
Karazhanov SZ, Zhang Y, Mascarenhas A, Deb S, Wang L-. Oxygen vacancy in cubic WO3 studied by first-principles pseudopotential calculation Solid State Ionics. 165: 43-49. DOI: 10.1016/J.Ssi.2003.08.012 |
0.389 |
|
| 2003 |
Zhang Y, Fluegel B, Hanna MC, Geisz JF, Wang L, Mascarenhas A. Effects of heavy nitrogen doping in III–V semiconductors– How well does the conventional wisdom holdfor the dilute nitrogen“III–V-N alloys”? Physica Status Solidi (B). 240: 396-403. DOI: 10.1002/Pssb.200303329 |
0.378 |
|
| 2002 |
Li J, Moss SC, Holy V, Norman A, Mascarenhas A, Reno J. X-Ray Characterization of Nanostructured Semiconductor Short-Period Superlattices Mrs Proceedings. 749. DOI: 10.1557/Proc-749-W20.2 |
0.354 |
|
| 2002 |
Seong MJ, Chun SH, Cheong HM, Samarth N, Mascarenhas A. Spectroscopic determination of hole density in the ferromagnetic semiconductor Ga 1-x Mn x As Physical Review B. 66: 33202. DOI: 10.1103/Physrevb.66.033202 |
0.36 |
|
| 2002 |
Fluegel B, Smith S, Zhang Y, Mascarenhas A, Geisz JF, Olson JM. Resonant excitation study of ultrasharp emission lines in orderedGaxIn1−xP Physical Review B. 65. DOI: 10.1103/Physrevb.65.115320 |
0.313 |
|
| 2002 |
Francoeur S, Norman AG, Mascarenhas A, Jones ED, Reno JL, Lee SR, Follstaedt DM. Two-dimensional array of self-assembled AlInAs quantum wires Applied Physics Letters. 81: 529-531. DOI: 10.1063/1.1493222 |
0.661 |
|
| 2002 |
Cheong HM, Kim D, Hanna MC, Mascarenhas A. Effect of doping on photoluminescence upconversion in GaAs/AlxGa1−xAs heterostructures Applied Physics Letters. 81: 58-60. DOI: 10.1063/1.1491303 |
0.351 |
|
| 2002 |
Li JH, Forrest RL, Moss SC, Zhang Y, Mascarenhas A, Bai J. Determination of the order parameter of CuPt-Bordered GaInP2 films by x-ray diffraction Journal of Applied Physics. 91: 9039-9042. DOI: 10.1063/1.1476971 |
0.348 |
|
| 2002 |
Shin B, Lin A, Lappo K, Goldman RS, Hanna MC, Francoeur S, Norman AG, Mascarenhas A. Initiation and evolution of phase separation in heteroepitaxial InAlAs films Applied Physics Letters. 80: 3292-3294. DOI: 10.1063/1.1476386 |
0.652 |
|
| 2002 |
Zhang Y, Mascarenhas A, Wang L. Band alignment between GaAs and partially ordered GaInP Applied Physics Letters. 80: 3111-3113. DOI: 10.1063/1.1472478 |
0.428 |
|
| 2002 |
Francoeur S, Hanna MC, Norman AG, Mascarenhas A. Observation of large optical anisotropy and valence band splitting in AlInAs self-assembled lateral quantum wells Applied Physics Letters. 80: 243-245. DOI: 10.1063/1.1432754 |
0.709 |
|
| 2002 |
Francoeur S, Norman A, Hanna M, Mascarenhas A, Reno J, Follstaedt D, Lee S. Optical properties of self-assembled lateral superlattices in AlInAs epitaxial layers and AlAs/InAs short-period superlattices Materials Science and Engineering: B. 88: 118-124. DOI: 10.1016/S0921-5107(01)00862-5 |
0.681 |
|
| 2002 |
Lee SH, Seong MJ, Tracy CE, Mascarenhas A, Pitts JR, Deb SK. Raman spectroscopic studies of electrochromic a-MoO3 thin films Solid State Ionics. 147: 129-133. DOI: 10.1016/S0167-2738(01)01035-9 |
0.337 |
|
| 2001 |
Jones ED, Bajaj KK, Coli G, Crooker SA, Zhang Y, Mascarenhas A, Olsen JM. Exciton Diamagnetic Shifts and Magnetic Field Dependent Linewidths in Ordered and Disordered InGaP Alloys Mrs Proceedings. 692. DOI: 10.1557/Proc-692-H6.37.1 |
0.309 |
|
| 2001 |
Zhang Y, Fluegel B, Hanna M, Duda A, Mascarenhas A. Electronic structure near the band gap of heavily nitrogen doped GaAs and GaP Mrs Proceedings. 692. DOI: 10.1557/Proc-692-H2.1.1 |
0.423 |
|
| 2001 |
Zhang Y, Mascarenhas A, Wang L. Statistical aspects of electronic and structural properties in partially ordered semiconductor alloys Physical Review B. 64. DOI: 10.1103/Physrevb.64.125207 |
0.403 |
|
| 2001 |
Perkins JD, Mascarenhas A, Geisz JF, Friedman DJ. Conduction-band-resonant nitrogen-induced levels in GaAs{sub 1-x}N{sub x} with x Physical Review B. 64: 121301. DOI: 10.1103/Physrevb.64.121301 |
0.348 |
|
| 2001 |
Seong MJ, Mascarenhas A, Olson JM, Cheong HM. Anisotropy of phonon modes in spontaneously ordered GaInP{sub 2} Physical Review B. 63: 235205. DOI: 10.1103/Physrevb.63.235205 |
0.312 |
|
| 2001 |
Zhang Y, Mascarenhas A, Wang L. Dependence of the band structure on the order parameter for partially orderedGaxIn1−xPalloys Physical Review B. 63. DOI: 10.1103/Physrevb.63.201312 |
0.393 |
|
| 2001 |
Zhang Y, Mascarenhas A, Xin HP, Tu CW. Scaling of band-gap reduction in heavily nitrogen doped GaAs Physical Review B. 63. DOI: 10.1103/Physrevb.63.161303 |
0.394 |
|
| 2001 |
Li JH, Kulik J, Holý V, Zhong Z, Moss SC, Zhang Y, Ahrenkiel SP, Mascarenhas A, Bai J. X-ray diffraction from CuPt-ordered III-V ternary semiconductor alloy films Physical Review B. 63. DOI: 10.1103/Physrevb.63.155310 |
0.374 |
|
| 2001 |
Zhong Z, Li JH, Kulik J, Chow PC, Norman AG, Mascarenhas A, Bai J, Golding TD, Moss SC. Quadruple-period ordering along [110] in aGaAs0.87Sb0.13alloy Physical Review B. 63. DOI: 10.1103/Physrevb.63.033314 |
0.357 |
|
| 2001 |
Seong MJ, Hanna MC, Mascarenhas A. Composition dependence of Raman intensity of the nitrogen localized vibrational mode in GaAs1-xNx Applied Physics Letters. 79: 3974-3976. DOI: 10.1063/1.1424469 |
0.33 |
|
| 2001 |
Seong MJ, Mascarenhas A, Geisz JF. T-L-X mixed symmetry of nitrogen-induced states in GaAs1-xNx probed by resonant Raman scattering Applied Physics Letters. 79: 1297-1299. DOI: 10.1063/1.1399010 |
0.362 |
|
| 2001 |
Li JH, Holý V, Zhong Z, Kulik J, Moss SC, Norman AG, Mascarenhas A, Reno JL, Follstaedt DM. X-ray analysis of spontaneous lateral modulation in (InAs)n/(AlAs)m short-period superlattices Applied Physics Letters. 78: 219-221. DOI: 10.1063/1.1338499 |
0.33 |
|
| 2001 |
Mascarenhas A. Dilute nitride based III–V alloys for laser and solar cell applications Current Opinion in Solid State and Materials Science. 5: 253-259. DOI: 10.1016/S1359-0286(01)00013-4 |
0.347 |
|
| 2001 |
Mascarenhas A, Zhang Y, Verley J, Seong MJ. Overcoming limitations in semiconductor alloy design Superlattices and Microstructures. 29: 395-404. DOI: 10.1006/Spmi.2001.0984 |
0.387 |
|
| 2001 |
Zhang Y, Mascarenhas A. Effects of the orientational superlattice on the electronic and vibrational properties of CuPt ordered GaInP alloys Journal of Raman Spectroscopy. 32: 831-834. DOI: 10.1002/Jrs.766 |
0.412 |
|
| 2001 |
Zhang Y, Francoeur S, Mascarenhas A, Xin H, Tu C. Electronic Structure of Heavily and Randomly Nitrogen Doped GaAs near the Fundamental Band Gap Physica Status Solidi (B). 228: 287-291. DOI: 10.1002/1521-3951(200111)228:1<287::Aid-Pssb287>3.0.Co;2-3 |
0.704 |
|
| 2001 |
Mascarenhas A, Zhang Y, Seong M. A Perspective of GaAs1-xNx and GaPxN1-x as Heavily Doped Semiconductors Physica Status Solidi (B). 228: 243-252. DOI: 10.1002/1521-3951(200111)228:1<243::Aid-Pssb243>3.0.Co;2-Z |
0.343 |
|
| 2000 |
Ahrenkiel RK, Mascarenhas A, Johnston SW, Zhang Y, Friedman DJ, Vernon SM. Photoconductive properties of GaAs 1-xN x double heterostructures as a function of excitation wavelength Materials Research Society Symposium - Proceedings. 607: 265-271. DOI: 10.1557/Proc-607-265 |
0.442 |
|
| 2000 |
Forrest RL, Meserole ED, Nielsen RT, Goorsky MS, Zhang Y, Mascarenhas A, Hanna M, Francoeur S. Single and double variant cupt-b ordered GalnAs Materials Research Society Symposium - Proceedings. 583: 249-254. DOI: 10.1557/Proc-583-249 |
0.669 |
|
| 2000 |
Zhang Y, Fluegel B, Mascarenhas A, Xin H, Tu C. Optical transitions in the isoelectronically doped semiconductor GaP:N: An evolution from isolated centers, pairs, and clusters to an impurity band Physical Review B. 62: 4493-4500. DOI: 10.1103/Physrevb.62.4493 |
0.434 |
|
| 2000 |
Cheong HM, Mascarenhas A, Geisz JF, Olson JM. Resonant Raman scattering in spontaneously orderedGaInP2 Physical Review B. 62: 1536-1539. DOI: 10.1103/Physrevb.62.1536 |
0.321 |
|
| 2000 |
Kozhevnikov M, Narayanamurti V, Reddy CV, Xin HP, Tu CW, Mascarenhas A, Zhang Y. Evolution ofGaAs1−xNxconduction states and giantAu/GaAs1−xNxSchottky barrier reduction studied by ballistic electron emission spectroscopy Physical Review B. 61: R7861-R7864. DOI: 10.1103/Physrevb.61.R7861 |
0.396 |
|
| 2000 |
Zhang Y, Mascarenhas A, Smith S, Geisz JF, Olson JM, Hanna M. Effects of spontaneous ordering and alloy statistical fluctuations on exciton linewidth inGaxIn1−xPalloys Physical Review B. 61: 9910-9912. DOI: 10.1103/Physrevb.61.9910 |
0.355 |
|
| 2000 |
Zhang Y, Mascarenhas A, Xin HP, Tu CW. Formation of an impurity band and its quantum confinement in heavily doped GaAs:N Physical Review B. 61: 7479-7482. DOI: 10.1103/Physrevb.61.7479 |
0.409 |
|
| 2000 |
Zhang Y, Mascarenhas A, Xin HP, Tu CW. Valence-band splitting and shear deformation potential of diluteGaAs1−xNxalloys Physical Review B. 61: 4433-4436. DOI: 10.1103/Physrevb.61.4433 |
0.449 |
|
| 2000 |
Zhang Y, Mascarenhas A. Isoelectronic impurity states in GaAs:N Physical Review B. 61: 15562-15564. DOI: 10.1103/Physrevb.61.15562 |
0.405 |
|
| 2000 |
Cheong HM, Zhang Y, Mascarenhas A, Geisz JF. Nitrogen-induced levels inGaAs1−xNxstudied with resonant Raman scattering Physical Review B. 61: 13687-13690. DOI: 10.1103/Physrevb.61.13687 |
0.39 |
|
| 2000 |
Karazhanov SZ, Zhang Y, Mascarenhas A, Deb S. The effect of excitons on CdTe solar cells Journal of Applied Physics. 87: 8786-8792. DOI: 10.1063/1.373611 |
0.331 |
|
| 2000 |
Francoeur S, Zhang Y, Norman AG, Alsina F, Mascarenhas A, Reno JL, Jones ED, Lee SR, Follstaedt DM. Optical properties of spontaneous lateral composition modulation in AlAs/InAs short-period superlattices Applied Physics Letters. 77: 1765. DOI: 10.1063/1.1311598 |
0.698 |
|
| 2000 |
Follstaedt DM, Reno JL, Jones ED, Lee SR, Norman AG, Moutinho HR, Mascarenhas A, Twesten RD. Effect of surface steps on the microstructure of lateral composition modulation Applied Physics Letters. 77: 669-671. DOI: 10.1063/1.127080 |
0.308 |
|
| 2000 |
Xin HP, Tu CW, Zhang Y, Mascarenhas A. Effects of nitrogen on the band structure of GaNxP1−x alloys Applied Physics Letters. 76: 1267-1269. DOI: 10.1063/1.126005 |
0.412 |
|
| 1999 |
Cheong HM, Zhang Y, Norman AG, Perkins JD, Mascarenhas A, Cheng KY, Hsieh KC. Profiling Composition Variations in Composition-Modulated GaP/InP Short-Period Superlattices Using Resonance Raman Scattering Mrs Proceedings. 583. DOI: 10.1557/Proc-583-361 |
0.393 |
|
| 1999 |
Follstaedt DM, Lee SR, Reno JL, Jones ED, Mascarenhas A, Millunchick JM. Reciprocal-Space and Real-Space Analyses of Compositional Modulation in InAs/AlAs Short-Period Superlattices Mrs Proceedings. 583: 333. DOI: 10.1557/Proc-583-333 |
0.323 |
|
| 1999 |
Norman AG, Ahrenkiel SP, Moutinho HR, Ballif C, Al-Jassim MM, Mascarenhas A, Follstaedt DM, Lee SR, Reno JL, Jones ED, Mirecki-Millunchick J, Twesten RD. The nature and origin of lateral composition modulations in short-period strained-layer superlattices Mrs Proceedings. 583: 297. DOI: 10.1557/Proc-583-297 |
0.362 |
|
| 1999 |
Zhang Y, Fluegel B, Ahrenkiel SP, Friedman DJ, Geisz JF, Olson JM, Mascarenhas A. Electronic and Optical Properties of Orientational Superlattices in Gainp Alloys Mrs Proceedings. 583. DOI: 10.1557/Proc-583-255 |
0.412 |
|
| 1999 |
Ahrenkiel SP, Jones KM, Matson RJ, Al-Jassim MM, Zhang Y, Mascarenhas A, Friedman DJ, Arent DJ, Olson JM, Hanna MC. CuPt-B Ordered Microstructures in GaInP and GaInAs Films Mrs Proceedings. 583: 243. DOI: 10.1557/Proc-583-243 |
0.339 |
|
| 1999 |
Alsina F, Cheong HM, Mestres N, Pascual J, Mascarenhas A. CuPt Ordering Signatures of Phonons in GaInP 2 Mrs Proceedings. 583: 223. DOI: 10.1557/Proc-583-223 |
0.351 |
|
| 1999 |
Smith S, Mascarenhas A, Olson JM, Kazmerski LL. Spatially Resolved Photoluminescence in Spontaneously-ordered GaInP2 Mrs Proceedings. 583. DOI: 10.1557/Proc-583-211 |
0.371 |
|
| 1999 |
Perkins JD, Mascarenhas A, Zhang Y, Geisz JF, Friedman DJ, Olson JM, Kurtz SR. Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction in GaAs{sub 1{minus}x}N{sub x } with x {lt} 0.03 Physical Review Letters. 82: 3312-3315. DOI: 10.1103/Physrevlett.82.3312 |
0.395 |
|
| 1999 |
Fluegel B, Zhang Y, Mascarenhas A, Geisz JF, Olson JM, Duda A. Crystal anisotropy and spin-polarized photoluminescence of orderedGaxIn1−xP Physical Review B. 60: R11261-R11264. DOI: 10.1103/Physrevb.60.R11261 |
0.35 |
|
| 1999 |
Cheong HM, Zhang Y, Norman AG, Perkins JD, Mascarenhas A, Cheng KY, Hsieh KC. Resonance Raman scattering studies of composition-modulated GaP/InP short-period superlattices Physical Review B. 60: 4883-4888. DOI: 10.1103/Physrevb.60.4883 |
0.412 |
|
| 1999 |
Alsina F, Webb JD, Mascarenhas A, Geisz JF, Olson JM, Duda A. Far-infrared transmission studies in disordered and orderedGa0.52In0.48P Physical Review B. 60: 1484-1487. DOI: 10.1103/Physrevb.60.1484 |
0.36 |
|
| 1999 |
Twesten RD, Follstaedt DM, Lee SR, Jones ED, Reno JL, Millunchick JM, Norman AG, Ahrenkiel SP, Mascarenhas A. Characterizing composition modulations in InAs/AlAs short-period superlattices Physical Review B. 60: 13619-13635. DOI: 10.1103/Physrevb.60.13619 |
0.395 |
|
| 1999 |
Kozhevnikov M, Narayanamurti V, Mascarenhas A, Zhang Y, Olson JM, Smith DL. Ordering-induced band structure effects in GaInP2 studied by ballistic electron emission microscopy Applied Physics Letters. 75: 1128-1130. DOI: 10.1063/1.124618 |
0.391 |
|
| 1999 |
Lee S, Cheong HM, Zhang J, Mascarenhas A, Benson DK, Deb SK. Electrochromic mechanism in a-WO3−y thin films Applied Physics Letters. 74: 242-244. DOI: 10.1063/1.123268 |
0.317 |
|
| 1999 |
Smith S, Cheong HM, Fluegel BD, Geisz JF, Olson JM, Kazmerski LL, Mascarenhas A. Spatially resolved photoluminescence in partially ordered GaInP2 Applied Physics Letters. 74: 706-708. DOI: 10.1063/1.123189 |
0.315 |
|
| 1999 |
Jones E, Follstaedt D, Lee S, Reno J, Mirecki Millunchick J, Ahrenkiel S, Mascarenhas A, Norman A, Zhang Y, Twesten R. Photoluminescence studies of lateral composition modulated short-period AlAs/InAs superlattices Thin Solid Films. 357: 31-34. DOI: 10.1016/S0040-6090(99)00470-8 |
0.372 |
|
| 1999 |
Lee S, Cheong HM, Tracy C, Mascarenhas A, Benson DK, Deb SK. Raman spectroscopic studies of electrochromic a-WO3 Electrochimica Acta. 44: 3111-3115. DOI: 10.1016/S0013-4686(99)00027-4 |
0.315 |
|
| 1998 |
Cheong HM, Fluegel B, Hanna MC, Mascarenhas A. Photoluminescence up-conversion in GaAs/Al{sub x}Ga{sub 1{minus}x}As heterostructures Physical Review B. 58. DOI: 10.1103/Physrevb.58.R4254 |
0.355 |
|
| 1998 |
Forrest RL, Golding TD, Moss SC, Zhang Y, Geisz JF, Olson JM, Mascarenhas A, Ernst P, Geng C. X-ray diffraction and excitation photoluminescence analysis of ordered GaInP Physical Review B. 58: 15355-15358. DOI: 10.1103/Physrevb.58.15355 |
0.41 |
|
| 1998 |
Cheong HM, Mascarenhas A, Geisz JF, Olson JM, Keller MW, Wendt JR. Statistical distribution of the order parameter in spontaneously orderedGa0.52In0.48Palloys Physical Review B. 57: R9400-R9403. DOI: 10.1103/Physrevb.57.R9400 |
0.32 |
|
| 1998 |
Fluegel B, Mascarenhas A, Geisz JF, Olson JM. Second harmonic generation in orderedGa1−xInxP Physical Review B. 57: R6787-R6790. DOI: 10.1103/Physrevb.57.R6787 |
0.342 |
|
| 1998 |
Zhang Y, Mascarenhas A. Electronic and optical properties of laterally composition-modulatedAlxIn1−xAs,GaxIn1−xP,andGaxIn1−xAsalloys Physical Review B. 57: 12245-12254. DOI: 10.1103/Physrevb.57.12245 |
0.429 |
|
| 1998 |
Ahrenkiel SP, Norman AG, Al-Jassim MM, Mascarenhas A, Mirecki-Millunchick J, Twesten RD, Lee SR, Follstaedt DM, Jones ED. Laterally modulated composition profiles in AlAs/InAs short-period superlattices Journal of Applied Physics. 84: 6088-6094. DOI: 10.1063/1.368921 |
0.342 |
|
| 1998 |
Perkins JD, Zhang Y, Geisz JF, McMahon WE, Olson JM, Mascarenhas A. Electroreflectance measurements of electric fields in ordered GaInP2 Journal of Applied Physics. 84: 4502-4508. DOI: 10.1063/1.368675 |
0.322 |
|
| 1998 |
Zhang Y, Mascarenhas A, Deb S. Effects of excitons on solar cells Journal of Applied Physics. 84: 3966-3971. DOI: 10.1063/1.368575 |
0.3 |
|
| 1998 |
Cheong HM, Mascarenhas A, Ahrenkiel SP, Jones KM, Geisz JF, Olson JM. Effect of microstructure on excitonic luminescence of spontaneously ordered Ga0.52In0.48P alloys Journal of Applied Physics. 83: 5418-5420. DOI: 10.1063/1.367371 |
0.378 |
|
| 1998 |
Cheong HM, Zhang Y, Mascarenhas A, Geisz JF, Olson JM. Low-temperature cleaved-edge polarized-photoluminescence studies of spontaneously ordered GaInP2 alloys Journal of Applied Physics. 83: 1773-1775. DOI: 10.1063/1.366898 |
0.382 |
|
| 1998 |
Zhang Y, Mascarenhas A, Jones ED. Magnetoexcitons in anisotropic semiconductors Journal of Applied Physics. 83: 448-454. DOI: 10.1063/1.366659 |
0.309 |
|
| 1998 |
Cheong HM, Ahrenkiel SP, Hanna MC, Mascarenhas A. Phonon signatures of spontaneous CuPt ordering in Ga0.47In0.53As/InP Applied Physics Letters. 73: 2648-2650. DOI: 10.1063/1.122541 |
0.385 |
|
| 1998 |
Liu N, Shih CK, Geisz J, Mascarenhas A, Olson JM. Alloy ordering in GaInP alloys: A cross-sectional scanning tunneling microscopy study Applied Physics Letters. 73: 1979-1981. DOI: 10.1063/1.122341 |
0.364 |
|
| 1998 |
Norman AG, Ahrenkiel SP, Moutinho H, Al-Jassim MM, Mascarenhas A, Millunchick JM, Lee SR, Twesten RD, Follstaedt DM, Reno JL, Jones ED. Strain-dependent morphology of spontaneous lateral composition modulations in (AlAs)m(InAs)n short-period superlattices grown by molecular beam epitaxy Applied Physics Letters. 73: 1844-1846. DOI: 10.1063/1.122301 |
0.328 |
|
| 1998 |
Follstaedt D, Twesten R, Mirecki Millunchick J, Lee S, Jones E, Ahrenkiel S, Zhang Y, Mascarenhas A. Spontaneous lateral composition modulation in InAlAs and InGaAs short-period superlattices Physica E: Low-Dimensional Systems and Nanostructures. 2: 325-329. DOI: 10.1016/S1386-9477(98)00068-X |
0.335 |
|
| 1998 |
Jones ED, Millunchick JM, Follstaedt D, Lee S, Reno J, Twesten RD, Zhang Y, Mascarenhas A. Detection of lateral composition modulation by magnetoexciton spectroscopy Physica E-Low-Dimensional Systems & Nanostructures. 2: 44-48. DOI: 10.1016/S1386-9477(98)00011-3 |
0.307 |
|
| 1998 |
Zhang Y, Mascarenhas A, Ahrenkiel S, Friedman D, Geisz J, Olson J. Electronic and optical properties of periodically stacked orientational domains in CuPt-ordered GaInP2 Solid State Communications. 109: 99-103. DOI: 10.1016/S0038-1098(98)00521-3 |
0.363 |
|
| 1997 |
Millunchick JM, Twesten R, Lee S, Follstaedt D, Jones E, Ahrenkiel S, Zhang Y, Cheong H, Mascarenhas A. Spontaneous Lateral Composition Modulation in III-V Semiconductor Alloys Mrs Bulletin. 22: 38-43. DOI: 10.1557/S088376940003339X |
0.351 |
|
| 1997 |
Cheong HM, Alsina F, Mascarenhas A, Geisz JF, Olson JM. Phonon modes in spontaneously orderedGaInP2studied by micro-Raman scattering measurements Physical Review B. 56: 1888-1892. DOI: 10.1103/Physrevb.56.1888 |
0.359 |
|
| 1997 |
Cheong HM, Mascarenhas A, Ernst P, Geng C. Effects of spontaneous ordering on Raman spectra of GaInP 2 Physical Review B. 56: 1882-1887. DOI: 10.1103/Physrevb.56.1882 |
0.4 |
|
| 1997 |
Alsina F, Cheong HM, Webb JD, Mascarenhas A, Geisz JF, Olson JM. Far-infrared reflection studies in orderedGaInP2 Physical Review B. 56: 13126-13131. DOI: 10.1103/Physrevb.56.13126 |
0.354 |
|
| 1997 |
Luo JS, Olson JM, Zhang Y, Mascarenhas A. Near-Band-Gap Reflectance Anisotropy In Ordered Ga0.5In0.5P Physical Review B. 55: 16385-16389. DOI: 10.1103/Physrevb.55.16385 |
0.368 |
|
| 1997 |
Fluegel B, Zhang Y, Cheong HM, Mascarenhas A, Geisz JF, Olson JM, Duda A. Exciton absorption bleaching studies in orderedGaxIn1−xP Physical Review B. 55: 13647-13650. DOI: 10.1103/Physrevb.55.13647 |
0.433 |
|
| 1997 |
Zhang Y, Mascarenhas A. Orientational superlattices formed by CuPt-ordered zinc-blende semiconductor alloys Physical Review B. 55: 13100-13110. DOI: 10.1103/Physrevb.55.13100 |
0.41 |
|
| 1997 |
Zhang Y, Mascarenhas A, Ernst P, Driessen FAJM, Friedman DJ, Bertness KA, Olson JM, Geng C, Scholz F, Schweizer H. Effects of strain, substrate misorientation, and excitonic transition on the optical polarization of ordered zinc-blende semiconductor alloys Journal of Applied Physics. 81: 6365-6373. DOI: 10.1063/1.364390 |
0.355 |
|
| 1997 |
Ernst P, Zhang Y, Driessen FAJM, Mascarenhas A, Jones ED, Geng C, Scholz F, Schweizer H. Magnetoluminescence study on the effective mass anisotropy of CuPtB-ordered GaInP2 alloys Journal of Applied Physics. 81: 2814-2817. DOI: 10.1063/1.363938 |
0.404 |
|
| 1997 |
Mirecki Millunchick J, Twesten RD, Follstaedt DM, Lee SR, Jones ED, Zhang Y, Ahrenkiel SP, Mascarenhas A. Lateral composition modulation in AlAs/InAs short period superlattices grown on InP(001) Applied Physics Letters. 70: 1402-1404. DOI: 10.1063/1.118589 |
0.334 |
|
| 1997 |
Millunchick JM, Twesten RD, Lee SR, Follstaedt DM, Jones ED, Ahrenkeil SP, Zhang Y, Cheong HM, Mascarenhas A. Spontaneous lateral composition modulation in AlAs/InAs short period superlattices via the growth front Journal of Electronic Materials. 26: 1048-1052. DOI: 10.1007/S11664-997-0242-1 |
0.351 |
|
| 1997 |
Mascarenhas A, Fluegel B, Zhang Y, Geisz JF, Olson JM. Carrier Relaxation and Exciton Bleaching in Spontaneously Ordered GaInP Physica Status Solidi (a). 164: 477-480. DOI: 10.1002/1521-396X(199711)164:1<477::Aid-Pssa477>3.0.Co;2-5 |
0.375 |
|
| 1996 |
Driessen FA, Cheong HM, Mascarenhas A, Deb SK, Hageman PR, Bauhuis GJ, Giling LJ. Interface-induced conversion of infrared to visible light at semiconductor interfaces. Physical Review. B, Condensed Matter. 54: R5263-R5266. PMID 9986584 DOI: 10.1103/Physrevb.54.R5263 |
0.414 |
|
| 1996 |
Ernst P, Geng C, Hahn G, Scholz F, Schweizer H, Phillipp F, Mascarenhas A. Influence of domain size on optical properties of ordered GaInP2 Journal of Applied Physics. 79: 2633-2639. DOI: 10.1063/1.361099 |
0.311 |
|
| 1996 |
Froyen S, Zunger A, Mascarenhas A. Polarization fields and band offsets in GaInP/GaAs and ordered/disordered GaInP superlattices Applied Physics Letters. 68: 2852-2854. DOI: 10.1063/1.116346 |
0.407 |
|
| 1996 |
Mascarenhas A, Zhang Y, Alonso R, Froyen S. Orientational superlattices in ordered GaInP2 Solid State Communications. 100: 47-51. DOI: 10.1016/0038-1098(96)00375-4 |
0.414 |
|
| 1995 |
Jones ED, Schneider RP, Mascarenhas A. Magnetoluminescence studies in ordered InGaP{sub 2} Mrs Proceedings. 417. DOI: 10.1557/Proc-417-73 |
0.348 |
|
| 1995 |
Ernst P, Geng C, Hahn G, Scholz F, Schweizer H, Zhang Y, Mascarenhas A. Optical Properties of Ordered Gainp Mrs Proceedings. 417. DOI: 10.1557/Proc-417-19 |
0.428 |
|
| 1995 |
Sinha K, Mascarenhas A, Kurtz SR, Olson JM. Determination of free carrier concentration inn‐GaInP alloy by Raman scattering Journal of Applied Physics. 78: 2515-2519. DOI: 10.1063/1.360715 |
0.36 |
|
| 1995 |
Ernst P, Geng C, Scholz F, Schweizer H, Zhang Y, Mascarenhas A. Band‐gap reduction and valence‐band splitting of ordered GaInP2 Applied Physics Letters. 67: 2347-2349. DOI: 10.1063/1.114340 |
0.372 |
|
| 1994 |
Horner GS, Mascarenhas A, Alonso RG, Froyen S, Bertness KA, Olson JM. Photoluminescence and excitation-photoluminescence study of spontaneous ordering in GaInP2. Physical Review. B, Condensed Matter. 49: 1727-1731. PMID 10010965 DOI: 10.1103/Physrevb.49.1727 |
0.395 |
|
| 1994 |
Sinha K, Mascarenhas A, Horner GS, Bertness KA, Kurtz SR, Olson JM. Raman line-shape analysis of random and spontaneously ordered GaInP2 alloy. Physical Review. B, Condensed Matter. 50: 7509-7513. PMID 9974733 DOI: 10.1103/Physrevb.50.7509 |
0.442 |
|
| 1994 |
Sinha K, Mascarenhas A, Alonso RG, Horner GS, Bertness KA, Kurtz SR, Olson JM. Optical investigation of the influence of substrate orientation on spontaneous ordering in Ga0.5In0.5P alloy Solid State Communications. 89: 843-847. DOI: 10.1016/0038-1098(94)90068-X |
0.441 |
|
| 1993 |
Mascarenhas A, Alonso RG, Horner GS, Froyen S, Hsieh KC, Cheng KY. Spontaneously generated effective-mass lateral superlattices. Physical Review. B, Condensed Matter. 48: 4907-4909. PMID 10008989 DOI: 10.1103/Physrevb.48.4907 |
0.334 |
|
| 1993 |
Sinha K, Mascarenhas A, Horner GS, Alonso RG, Bertness KA, Olson JM. Resonance Raman study of spontaneous ordering in GaInP2. Physical Review. B, Condensed Matter. 48: 17591-17594. PMID 10008380 DOI: 10.1103/Physrevb.48.17591 |
0.389 |
|
| 1993 |
Alonso RG, Mascarenhas A, Horner GS, Bertness KA, Kurtz SR, Olson JM. Spontaneous ordering in GaInP2: A polarized-piezomodulated-reflectivity study. Physical Review. B, Condensed Matter. 48: 11833-11837. PMID 10007522 DOI: 10.1103/Physrevb.48.11833 |
0.371 |
|
| 1993 |
Horner GS, Mascarenhas A, Froyen S, Alonso RG, Bertness K, Olson JM. Photoluminescence-excitation-spectroscopy studies in spontaneously ordered GaInP2. Physical Review. B, Condensed Matter. 47: 4041-4043. PMID 10006527 DOI: 10.1103/Physrevb.47.4041 |
0.376 |
|
| 1993 |
Alonso RG, Mascarenhas A, Horner GS, Sinha K, Zhu J, Friedman DJ, Bertness KA, Olson JM. Evidence for pyroelectricity in single variant spontaneously ordered GaInP2 Solid State Communications. 88: 341-344. DOI: 10.1016/0038-1098(93)90220-H |
0.314 |
|
| 1993 |
Alonso RG, Mascarenhas A, Froyen S, Horner GS, Bertness K, Olson JM. Polarized piezomodulated reflectance study of spontaneous ordering in GaInP2 Solid State Communications. 85: 1021-1024. DOI: 10.1016/0038-1098(93)90158-J |
0.37 |
|
| 1992 |
Mascarenhas A, Alonso RG, Horner GS, Froyen S, Hsieh KC, Cheng KY. Experimental evidence for a spontaneously generated effective mass lateral superlattice Superlattices and Microstructures. 12: 57-61. DOI: 10.1016/0749-6036(92)90220-Y |
0.345 |
|
| 1990 |
Mascarenhas A, Kurtz S, Kibbler A, Olsonsolar JM. Optical Investigations of Symmetry Breaking in GaInP 2 Mrs Proceedings. 198: 65. DOI: 10.1557/Proc-198-65 |
0.421 |
|
| 1988 |
Mascarenhas A, Geller S, Xu LC, Katayama‐Yoshida H, Pankove JI, Deb SK. Raman spectroscopic investigation of superconducting YBa2Cu3O7−x, semiconducting YBa2Cu3O6+x, and possible impurity phases Applied Physics Letters. 52: 242-243. DOI: 10.1063/1.99651 |
0.334 |
|
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