| Year |
Citation |
Score |
| 2017 |
Sopori B, Basnyat P, Devayajanam S, Tan T, Upadhyaya A, Tate K, Rohatgi A, Xu H. Dissolution of Oxygen Precipitate Nuclei in n-Type CZ-Si Wafers to Improve Their Material Quality: Experimental Results Ieee Journal of Photovoltaics. 7: 97-103. DOI: 10.1109/Jphotov.2016.2621345 |
0.38 |
|
| 2013 |
Li N, Li W, Liu L, Tan TY. A nucleation-growth model of nanowires produced by the vapor-liquid-solid process Journal of Applied Physics. 114: 64302. DOI: 10.1063/1.4817794 |
0.379 |
|
| 2012 |
Sopori B, Tan T, Rupnowski P. Photovoltaic materials and devices International Journal of Photoenergy. 2012. DOI: 10.1155/2012/673975 |
0.318 |
|
| 2008 |
Li N, Tan TY, Gösele U. Transition region width of nanowire hetero- and pn-junctions grown using vapor-liquid-solid processes Applied Physics a: Materials Science and Processing. 90: 591-596. DOI: 10.1007/S00339-007-4376-Z |
0.378 |
|
| 2007 |
Li H, Li N, Joshi SM, Tan TY. Predominance of Alternate Diffusion Mechanisms for the Interstitial-Substitutional Impurity Gold in Silicon Mrs Proceedings. 994. DOI: 10.1557/Proc-0994-F02-05 |
0.794 |
|
| 2007 |
Li N, Tan TY, Gösele U. Chemical tension and global equilibrium in VLS nanostructure growth process: From nanohillocks to nanowires Applied Physics a: Materials Science and Processing. 86: 433-440. DOI: 10.1007/S00339-006-3809-4 |
0.312 |
|
| 2007 |
Zhao L, Li N, Langner A, Steinhart M, Tan TY, Pippel E, Hofmeister H, Tu KN, Gösele U. Crystallization of amorphous SiO2 microtubes catalyzed by lithium Advanced Functional Materials. 17: 1952-1957. DOI: 10.1002/Adfm.200601104 |
0.366 |
|
| 2004 |
Schubert L, Werner P, Zakharov ND, Gerth G, Kolb FM, Long L, Gösele U, Tan TY. Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy Applied Physics Letters. 84: 4968-4970. DOI: 10.1063/1.1762701 |
0.397 |
|
| 2004 |
Negoita MD, Tan TY. Metallic precipitate contribution to carrier generation in metal–oxide–semiconductor capacitors due to the Schottky effect Journal of Applied Physics. 95: 191-198. DOI: 10.1063/1.1630701 |
0.413 |
|
| 2004 |
Tan TY, Li N, Gösele U. On the thermodynamic size limit of nanowires grown by the vapor-liquid-solid process Applied Physics A. 78: 519-526. DOI: 10.1007/S00339-003-2380-5 |
0.364 |
|
| 2003 |
Negoita MD, Tan TY. Metallic precipitate contribution to generation and recombination currents in p-n junction devices due to the Schottky effect Journal of Applied Physics. 94: 5064-5070. DOI: 10.1063/1.1611289 |
0.414 |
|
| 2003 |
Tan TY, Li N, Gösele U. Is there a thermodynamic size limit of nanowires grown by the vapor-liquid-solid process? Applied Physics Letters. 83: 1199-1201. DOI: 10.1063/1.1599984 |
0.364 |
|
| 2002 |
Tan TY. Recent Progresses in Understanding Gettering in Silicon Mrs Proceedings. 719. DOI: 10.1557/Proc-719-F4.1 |
0.436 |
|
| 2002 |
Plekhanov PS, Negoita MD, Tan TY. Erratum: “Effect of Al-induced gettering and back surface field on the efficiency of Si solar cells” [J. Appl. Phys. 90, 5388 (2001)] Journal of Applied Physics. 91: 5508-5508. DOI: 10.1063/1.1464647 |
0.396 |
|
| 2002 |
Tan TY, Lee ST, Gösele U. A model for growth directional features in silicon nanowires Applied Physics A. 74: 423-432. DOI: 10.1007/S003390101133 |
0.425 |
|
| 2001 |
Tan TY, Plekhanov PS. A Quantitative Model of the Electrical Activity of Metal Silicide Precipitates in Silicon Based on the Schottky Effect Mrs Proceedings. 669. DOI: 10.1557/Proc-669-J6.11 |
0.678 |
|
| 2001 |
Plekhanov PS, Negoita MD, Tan TY. Effect of Al-induced gettering and back surface field on the efficiency of Si solar cells Journal of Applied Physics. 90: 5388-5394. DOI: 10.1063/1.1412575 |
0.416 |
|
| 2001 |
Joshi SM, Gösele UM, Tan TY. Extended high temperature Al gettering for improvement and homogenization of minority carrier diffusion lengths in multicrystalline Si Solar Energy Materials and Solar Cells. 70: 231-238. DOI: 10.1016/S0927-0248(01)00029-0 |
0.798 |
|
| 2000 |
Plekhanov PS, Tan TY. Schottky effect model of electrical activity of metallic precipitates in silicon Applied Physics Letters. 76: 3777-3779. DOI: 10.1063/1.126778 |
0.485 |
|
| 1999 |
Chen C, Gösele UM, Tan TY. Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs Journal of Applied Physics. 86: 5376-5384. DOI: 10.1063/1.371534 |
0.409 |
|
| 1999 |
Plekhanov PS, Gafiteanu R, Gösele UM, Tan TY. Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications Journal of Applied Physics. 86: 2453-2458. DOI: 10.1063/1.371075 |
0.411 |
|
| 1999 |
Scholz RF, Werner P, Gösele U, Tan TY. The contribution of vacancies to carbon out-diffusion in silicon Applied Physics Letters. 74: 392-394. DOI: 10.1063/1.123081 |
0.394 |
|
| 1999 |
Chen C-, Gösele UM, Tan TY. Dopant diffusion and segregation in semiconductor heterostructures : Part III, diffusion of Si into GaAs Applied Physics A. 69: 313-321. DOI: 10.1007/S003390051007 |
0.525 |
|
| 1999 |
Chen C-, Gösele UM, Tan TY. Dopant diffusion and segregation in semiconductor heterostructures: Part 2. B in GexSi1-x/Si structures Applied Physics A. 68: 19-24. DOI: 10.1007/S003390050848 |
0.485 |
|
| 1999 |
Chen C-, Gösele UM, Tan TY. Dopant diffusion and segregation in semiconductor heterostructures: Part 1. Zn and Be in III-V compound superlattices Applied Physics A. 68: 9-18. DOI: 10.1007/S003390050847 |
0.369 |
|
| 1998 |
Scholz RF, Gösele UM, Breitenstein O, Egger U, Tan TY. Cathodoluminescence Investigation of Diffusion Studies on the Arsenic Sublattice in Gallium Arsenide Solid State Phenomena. 183-190. DOI: 10.4028/Www.Scientific.Net/Ssp.63-64.183 |
0.383 |
|
| 1998 |
Chen C, Gösele UM, Tan TY. Fermi-Level Effect and Junction Carrier Concentration Effect on Boron Distribution in Ge x Si l−x /Si Heterostructures Mrs Proceedings. 535: 275. DOI: 10.1557/Proc-535-275 |
0.487 |
|
| 1998 |
Tan TY, Chen C-, Gösele U, Scholz R. Fermi-Level Effect, Electric Field Effect, and Diffusion Mechanisms in GaAs Based III-V Compound Semiconductors Mrs Proceedings. 527: 321. DOI: 10.1557/Proc-527-321 |
0.362 |
|
| 1998 |
Plekhanov PS, Gösele UM, Tan TY. Modeling of nucleation and growth of voids in silicon Journal of Applied Physics. 84: 718-726. DOI: 10.1063/1.368128 |
0.436 |
|
| 1998 |
Schultz M, Egger U, Scholz R, Breitenstein O, Gösele U, Tan TY. Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide Journal of Applied Physics. 83: 5295-5301. DOI: 10.1063/1.367354 |
0.395 |
|
| 1998 |
Tan TY. Mass transport equations unifying descriptions of isothermal diffusion, thermomigration, segregation, and position-dependent diffusivity Applied Physics Letters. 73: 2678-2680. DOI: 10.1063/1.122551 |
0.32 |
|
| 1998 |
Scholz R, Gösele U, Huh JY, Tan TY. Carbon-induced undersaturation of silicon self-interstitials Applied Physics Letters. 72: 200-202. DOI: 10.1063/1.120684 |
0.42 |
|
| 1998 |
Tong QY, Scholz R, Gösele U, Lee TH, Huang LJ, Chao YL, Tan TY. A "smarter-cut" approach to low temperature silicon layer transfer Applied Physics Letters. 72: 49-51. DOI: 10.1063/1.120601 |
0.371 |
|
| 1997 |
Gösele UM, Tan TY, Schultz M, Egger U, Werner P, Scholz R, Breitenstein O. Diffusion in GaAs and Related Compounds: Recent Developments Defect and Diffusion Forum. 1079-1094. DOI: 10.4028/Www.Scientific.Net/Ddf.143-147.1079 |
0.331 |
|
| 1997 |
Chen C-, Gösele U, Tan TY. Simulation of Under- and Supersaturation of Gallium Vacancies in Gallium Arsenide During Silicon in- and Outdiffusion Mrs Proceedings. 490. DOI: 10.1557/Proc-490-99 |
0.515 |
|
| 1997 |
Plekhanov PS, Gösele UM, Tan TY. Nucleation and Growth of Voids in Silicon Mrs Proceedings. 490: 77. DOI: 10.1557/Proc-490-77 |
0.383 |
|
| 1997 |
Joshi SM, Gösele UM, Tan TY. Gold Diffusion in Silicon During Gettering by an Aluminum Layer Mrs Proceedings. 490. DOI: 10.1557/Proc-490-117 |
0.793 |
|
| 1997 |
Chen C-, Gösele U, Tan TY. Fermi-Level Effect on Group III Atom Interdiffusion in III-V Compounds: Bandgap Heterogeneity and Low Silicon-Doping Mrs Proceedings. 490: 105. DOI: 10.1557/Proc-490-105 |
0.433 |
|
| 1997 |
Sopori BL, Alleman J, Chen W, Tan TY, Ravindra NM. Grain Enhancement of Thin Silicon Layers Using Optical Processing Mrs Proceedings. 470: 419. DOI: 10.1557/Proc-470-419 |
0.338 |
|
| 1997 |
Gösele U, Conrad D, Werner P, Tong Q-, Gafiteanu R, Tan TY. Point Defects, Diffusion and Gettering in Silicon Mrs Proceedings. 469. DOI: 10.1557/Proc-469-13 |
0.46 |
|
| 1997 |
Egger U, Schultz M, Werner P, Breitenstein O, Tan TY, Gösele U, Franzheld R, Uematsu M, Ito H. Interdiffusion studies in GaAsP/GaAs and GaAsSb/GaAs superlattices under various arsenic vapor pressures Journal of Applied Physics. 81: 6056-6061. DOI: 10.1063/1.364453 |
0.37 |
|
| 1997 |
Tan TY, Plekhanov P, Gösele UM. Nucleation barrier of voids and dislocation loops in silicon Applied Physics Letters. 70: 1715-1717. DOI: 10.1063/1.118652 |
0.446 |
|
| 1997 |
Schroer E, Hopfe S, Werner P, Gösele U, Duscher G, Rühle M, Tan TY. Oxide precipitation at silicon grain boundaries Applied Physics Letters. 70: 327-329. DOI: 10.1063/1.118405 |
0.347 |
|
| 1996 |
Tan TY, Gösele UM. Effects of p-type dopants on enhancing AlAs/GaAs superlattice disordering Materials Chemistry and Physics. 44: 45-50. DOI: 10.1016/0254-0584(95)01654-D |
0.348 |
|
| 1995 |
Gafiteanu R, Gösele U, Tan TY. Phosphorus and Aluminum Gettering of Gold in Silicon: Simulation and Optimization Considerations Mrs Proceedings. 378: 297. DOI: 10.1557/Proc-378-297 |
0.403 |
|
| 1995 |
Joshi SM, GÖsele YM, Tan TY. Minority Carrier Diffusion Length Improvement in Czochralski Silicon by Aluminum Gettering Mrs Proceedings. 378. DOI: 10.1557/Proc-378-279 |
0.785 |
|
| 1995 |
Tong Q‐, Kaido G, Tong L, Reiche M, Shi F, Steinkirchner J, Tan TY, Gösele U. A Simple Chemical Treatment for Preventing Thermal Bubbles in Silicon Wafer Bonding Journal of the Electrochemical Society. 142. DOI: 10.1149/1.2050045 |
0.323 |
|
| 1995 |
Huh J‐, Gösele U, Tan TY. Coprecipitation of oxygen and carbon in Czochralski silicon: A growth kinetic approach Journal of Applied Physics. 78: 5926-5935. DOI: 10.1063/1.360594 |
0.412 |
|
| 1995 |
Huh J‐, Tan TY, Gösele U. Model of partitioning of point defect species during precipitation of a misfitting compound in Czochralski silicon Journal of Applied Physics. 77: 5563-5571. DOI: 10.1063/1.359197 |
0.426 |
|
| 1995 |
Joshi SM, Gösele UM, Tan TY. Improvement of minority carrier diffusion length in Si by Al gettering Journal of Applied Physics. 77: 3858-3863. DOI: 10.1063/1.358563 |
0.792 |
|
| 1995 |
Uematsu M, Werner P, Schultz M, Tan TY, Gösele UM. Sulfur diffusion and the interstitial contribution to arsenic self‐diffusion in GaAs Applied Physics Letters. 67: 2863-2865. DOI: 10.1063/1.114810 |
0.379 |
|
| 1995 |
Tan TY. Point defects and diffusion mechanisms pertinent to the Ga sublattice of GaAs Materials Chemistry &Amp; Physics. 40: 245-252. DOI: 10.1016/0254-0584(95)01488-8 |
0.404 |
|
| 1995 |
Chen CH, Tan TY. On the validity of the amphoteric-defect model in gallium arsenide and a criterion for Fermi-level pinning by defects Applied Physics A. 61: 397-405. DOI: 10.1007/Bf01540114 |
0.3 |
|
| 1994 |
Tan TY, Taylor WJ. Chapter 9 Mechanisms of Oxygen Precipitation: Some Quantitative Aspects Semiconductors and Semimetals. 42: 353-390. DOI: 10.1016/S0080-8784(08)60252-5 |
0.37 |
|
| 1994 |
Hsia SL, McGuire GE, Tan TY, Smith PL, Lynch WT. High resistivity Co and Ti silicide formation on silicon-on-insulator substrates Thin Solid Films. 253: 462-466. DOI: 10.1016/0040-6090(94)90367-0 |
0.334 |
|
| 1993 |
Hsia SL, Tan TY, Smith PL, Mcguire GE. Arsenic Diffusion and Segregation Behavior at the Interface of Epitaxial CoSi 2 Film and Si Substrate Mrs Proceedings. 320: 409. DOI: 10.1557/Proc-320-409 |
0.434 |
|
| 1993 |
Hsia SL, Tan TY, Smith PL, Mcguire GE. CoSi and CoSi 2 Phase Formation on Bulk and Soi Si Substrates Mrs Proceedings. 320. DOI: 10.1557/Proc-320-373 |
0.445 |
|
| 1993 |
Gafiteanu R, You H-, Göesele U, Tan TY. Diffusion-Segregation Equation for Simulation in Heterostructures Mrs Proceedings. 318: 31. DOI: 10.1557/Proc-318-31 |
0.309 |
|
| 1993 |
Tan TY, You H, Gösele UM. Thermal Equilibrium Concentrations and Effects of Ga Vacancies in n-TYPE GaAs Mrs Proceedings. 300: 377. DOI: 10.1557/Proc-300-377 |
0.308 |
|
| 1993 |
Taylor WJ, Gösele UM, Tan TY. Co-Precipitation of Carbon and Oxygen in Silicon: The Dominant Flux Criterion Japanese Journal of Applied Physics. 32: 4857-4862. DOI: 10.1143/Jjap.32.4857 |
0.314 |
|
| 1993 |
You H, Gösele UM, Tan TY. Simulation of the transient indiffusion‐segregation process of triply negatively charged Ga vacancies in GaAs and AlAs/GaAs superlattices Journal of Applied Physics. 74: 2461-2470. DOI: 10.1063/1.354683 |
0.362 |
|
| 1993 |
You HM, Tan TY, Gösele UM, Lee S‐, Höfler GE, Hsieh KC, Holonyak N. Al–Ga interdiffusion, carbon acceptor diffusion, and hole reduction in carbon‐doped Al0.4Ga0.6As/GaAs superlattices: The As4 pressure effect Journal of Applied Physics. 74: 2450-2460. DOI: 10.1063/1.354682 |
0.37 |
|
| 1993 |
Jäger W, Rucki A, Urban K, Hettwer H, Stolwijk NA, Mehrer H, Tan TY. Formation of void/Ga‐precipitate pairs during Zn diffusion into GaAs: The competition of two thermodynamic driving forces Journal of Applied Physics. 74: 4409-4422. DOI: 10.1063/1.354412 |
0.363 |
|
| 1993 |
Zimmermann H, Gösele U, Tan TY. Modeling of zinc‐indiffusion‐induced disordering of GaAs/AlAs superlattices Journal of Applied Physics. 73: 150-157. DOI: 10.1063/1.353892 |
0.363 |
|
| 1993 |
You H, Gösele UM, Tan TY. A study of Si outdiffusion from predoped GaAs Journal of Applied Physics. 73: 7207-7216. DOI: 10.1063/1.352394 |
0.513 |
|
| 1993 |
Taylor WJ, Tan TY, Gösele U. Carbon precipitation in silicon: Why is it so difficult? Applied Physics Letters. 62: 3336-3338. DOI: 10.1063/1.109063 |
0.331 |
|
| 1993 |
Zimmermann H, Gösele U, Tan TY. Diffusion of Fe in InP via the kick‐out mechanism Applied Physics Letters. 62: 75-77. DOI: 10.1063/1.108832 |
0.376 |
|
| 1993 |
Taylor WJ, Gösele UM, Tan TY. Precipitate strain relief via point defect interaction: models for SiO2 in silicon Materials Chemistry and Physics. 34: 166-174. DOI: 10.1016/0254-0584(93)90208-4 |
0.305 |
|
| 1993 |
Tan TY, You HM, Gösele UM. Thermal equilibrium concentrations and effects of negatively charged Ga vacancies in n -type GaAs Applied Physics A. 56: 249-258. DOI: 10.1007/Bf00539483 |
0.314 |
|
| 1992 |
Gösele UM, Tan TY. Diffusion in Semiconductors - Unsolved Problems Defect and Diffusion Forum. 83: 189-206. DOI: 10.4028/Www.Scientific.Net/Ddf.83.189 |
0.341 |
|
| 1992 |
You H, GöSele UM, Tan TY. Crystal Surface Stoichiometry and the Fermi Level Effects on Outdiffusion of Si in GaAs Mrs Proceedings. 282: 151. DOI: 10.1557/Proc-282-151 |
0.498 |
|
| 1992 |
Tan TY, You HM, Yu S, Gitesele UM, Jäger W, Zypman F, Tsu R, Lee ST. Disordering and Characterization Studies of 69 GaAs/ 71 GaAs Isotope Superlattice Structures: The Effect of Outdiffusion of the Substrate Dopant Si Mrs Proceedings. 262: 873. DOI: 10.1557/Proc-262-873 |
0.415 |
|
| 1992 |
Zimmermann H, Tan TY, Goesele U. A Consistent Model for Disordering of GaAs/AlAs- Superiattices During Zinc Diffusion Mrs Proceedings. 262: 861. DOI: 10.1557/Proc-262-861 |
0.363 |
|
| 1992 |
Tan TY, You HM, Yu S, Gösele UM, Jäger W, Boeringer DW, Zypman F, Tsu R, Lee ST. Disordering in 69GaAs/71GaAs isotope superlattice structures Journal of Applied Physics. 72: 5206-5212. DOI: 10.1063/1.352002 |
0.437 |
|
| 1992 |
Hsia SL, Tan TY, Smith P, McGuire GE. Resistance and structural stabilities of epitaxial CoSi2 films on (001) Si substrates Journal of Applied Physics. 72: 1864-1873. DOI: 10.1063/1.351659 |
0.329 |
|
| 1992 |
Taylor WJ, Gösele U, Tan TY. SiO2 precipitate strain relief in Czochralski Si : self-interstitial emission versus prismatic dislocation loop punching Journal of Applied Physics. 72: 2192-2196. DOI: 10.1063/1.351610 |
0.353 |
|
| 1992 |
Li J, Yang W, Tan TY, Chevacharoenkul S, Chapman R. Liquid silicide formation on the Si wafer free surface during Ni diffusion at 1200 °C Journal of Applied Physics. 71: 196-203. DOI: 10.1063/1.350736 |
0.456 |
|
| 1992 |
Li J, Yang W, Tan TY. Enhancement of gold solubility in silicon wafers Journal of Applied Physics. 71: 527-529. DOI: 10.1063/1.350693 |
0.374 |
|
| 1991 |
Gösele UM, Tan TY. Point Defects and Diffusion in Semiconductors Mrs Bulletin. 16: 42-46. DOI: 10.1557/S0883769400055512 |
0.457 |
|
| 1991 |
Yu S, Tan TY, Gösele U. Mechanism of Cr Diffusion in GaAs Mrs Proceedings. 240: 747. DOI: 10.1557/Proc-240-747 |
0.373 |
|
| 1991 |
Tan TY, Yu S, Gösele U. Determination of Ga Self-Diffusion Coefficient in GaAs Mrs Proceedings. 240: 739. DOI: 10.1557/Proc-240-739 |
0.326 |
|
| 1991 |
Tan TY, Gösele U, Yu S. Point defects, diffusion mechanisms, and superlattice disordering in gallium arsenide-based materials Critical Reviews in Solid State and Materials Sciences. 17: 47-106. DOI: 10.1080/10408439108244631 |
0.395 |
|
| 1991 |
Hsia SL, Tan TY, Smith P, McGuire GE. Formation of epitaxial CoSi2 films on (001) silicon using Ti‐Co alloy and bimetal source materials Journal of Applied Physics. 70: 7579-7587. DOI: 10.1063/1.349713 |
0.342 |
|
| 1991 |
Chen S, Lee S‐, Braunstein G, Ko KY, Tan TY. Distribution mechanism of voids in Si‐implanted GaAs Journal of Applied Physics. 70: 656-660. DOI: 10.1063/1.349669 |
0.363 |
|
| 1991 |
Yu S, Tan TY, Gösele U. Diffusion mechanism of chromium in GaAs Journal of Applied Physics. 70: 4827-4836. DOI: 10.1063/1.349049 |
0.345 |
|
| 1991 |
Yu S, Tan TY, Gösele U. Diffusion mechanism of zinc and beryllium in gallium arsenide Journal of Applied Physics. 69: 3547-3565. DOI: 10.1063/1.348497 |
0.37 |
|
| 1991 |
Taylor WJ, Tan TY, Gösele UM. Oxygen precipitation in silicon: The role of strain and self‐interstitials Applied Physics Letters. 59: 2007-2009. DOI: 10.1063/1.106136 |
0.401 |
|
| 1991 |
Tan TY. Point defect thermal equilibria in GaAs Materials Science and Engineering B. 10: 227-239. DOI: 10.1016/0921-5107(91)90130-N |
0.317 |
|
| 1991 |
Lee S-, Chen S, Braunstein G, Ko K, Tan TY. Anomalous electrical activation in Si-implanted GaAs/AlGaAs superlattices Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 59: 999-1002. DOI: 10.1016/0168-583X(91)95750-8 |
0.39 |
|
| 1991 |
Tan TY, Yu S, Gösele U. Atomistic mechanisms of dopant-induced multiple quantum well mixing and related phenomena Optical and Quantum Electronics. 23. DOI: 10.1007/Bf00624976 |
0.438 |
|
| 1990 |
Chen S, Lee S-, Braunstein G, Ko KY, Tan TY. On the Distribution Mechanism of Voids in Si-Implanted GaAs Mrs Proceedings. 209. DOI: 10.1557/Proc-209-421 |
0.373 |
|
| 1990 |
Chen S, Lee S-, Braunstein G, Ko K-, Zheng LR, Tan TY. Void formation and its effect on dopant diffusion and carrier activation in Si-implanted GaAs Japanese Journal of Applied Physics. 29. DOI: 10.1143/Jjap.29.L1950 |
0.478 |
|
| 1990 |
Lee S‐, Chen S, Braunstein G, Ko K, Ott ML, Tan TY. Void formation, electrical activation, and layer intermixing in Si‐implanted GaAs/AlGaAs superlattices Applied Physics Letters. 57: 389-391. DOI: 10.1063/1.103701 |
0.403 |
|
| 1990 |
Ahn K-, Stengl R, Tan TY, Gösele U, Smith P. Growth, shrinkage, and stability of interfacial oxide layers between directly bonded silicon wafers Applied Physics A. 50: 85-94. DOI: 10.1007/Bf00323957 |
0.314 |
|
| 1989 |
Ko K, Chen S, Lee ST, Zheng L, Tan TY. Correlation of Void Formation with the Reduction of Carrier Activation and Anomalous Dopant Diffusion in Si-Implanted GaAs Mrs Proceedings. 163: 983. DOI: 10.1557/Proc-163-983 |
0.461 |
|
| 1989 |
Gösele U, Tan TY, Yu S. Diffusion in Gallium Arsenide and GaAs-Based Layered Structures Mrs Proceedings. 163: 715. DOI: 10.1557/Proc-163-715 |
0.358 |
|
| 1989 |
Stengl R, Tan T, Gösele U. A Model for the Silicon Wafer Bonding Process Japanese Journal of Applied Physics. 28: 1735-1741. DOI: 10.1143/Jjap.28.1735 |
0.318 |
|
| 1989 |
Taylor W, Marioton BPR, Tan TY, Gösele U. The diffusivity of silicon self-interstitials Radiation Effects and Defects in Solids. 131-150. DOI: 10.1080/10420158908212989 |
0.441 |
|
| 1989 |
Yu S, Gösele UM, Tan TY. A model of Si diffusion in GaAs based on the effect of the Fermi level Journal of Applied Physics. 66: 2952-2961. DOI: 10.1063/1.344176 |
0.502 |
|
| 1989 |
Rogers WB, Massoud HZ, Fair RB, Gösele UM, Tan TY, Rozgonyi GA. The role of silicon self‐interstitial supersaturation in the retardation of oxygen precipitation in Czochralski silicon Journal of Applied Physics. 65: 4215-4219. DOI: 10.1063/1.343303 |
0.394 |
|
| 1989 |
Ahn K‐, Stengl R, Tan TY, Gösele U, Smith P. Stability of interfacial oxide layers during silicon wafer bonding Journal of Applied Physics. 65: 561-563. DOI: 10.1063/1.343141 |
0.365 |
|
| 1989 |
Kola RR, Rozgonyi GA, Li J, Rogers WB, Tan TY, Bean KE, Lindberg K. Transition metal silicide precipitation in silicon induced by rapid thermal processing and free‐surface gettering Applied Physics Letters. 55: 2108-2110. DOI: 10.1063/1.102342 |
0.443 |
|
| 1989 |
Chen S, Lee S‐, Braunstein G, Tan TY. Void formation and inhibition of layer intermixing in ion‐impIanted GaAs/AlGaAs superlattices Applied Physics Letters. 55: 1194-1196. DOI: 10.1063/1.101653 |
0.362 |
|
| 1989 |
Marioton BPR, Tan TY, Gösele U. Influence of dislocations on diffusion‐induced nonequilibrium point defects in III‐V compounds Applied Physics Letters. 54: 849-851. DOI: 10.1063/1.100846 |
0.322 |
|
| 1989 |
Gösele U, Ahn KY, Marioton BPR, Tan TY, Lee ST. Do oxygen molecules contribute to oxygen diffusion and thermal donor formation in silicon Applied Physics A. 48: 219-228. DOI: 10.1007/Bf00619388 |
0.352 |
|
| 1988 |
Gösele UM, Tan TY. Point Defects and Diffusion in Silicon and Gallium Arsenide Defect and Diffusion Forum. 59: 1-16. DOI: 10.4028/Www.Scientific.Net/Ddf.59.1 |
0.464 |
|
| 1988 |
Tan TY, Gösele U. Mechanisms of doping‐enhanced superlattice disordering and of gallium self‐diffusion in GaAs Applied Physics Letters. 52: 1240-1242. DOI: 10.1063/1.99168 |
0.309 |
|
| 1988 |
Tan TY, Gösele U. Diffusion mechanisms and superlattice disordering in GaAs Materials Science and Engineering B-Advanced Functional Solid-State Materials. 1: 47-65. DOI: 10.1016/0921-5107(88)90030-X |
0.458 |
|
| 1987 |
Tan TY, Gösele U, Marioton BPR. Mechanisms of Doping-Enhanced Superlattice Disordering and of Gallium Self-Diffusion in GaAs Mrs Proceedings. 104: 605. DOI: 10.1557/Proc-104-605 |
0.368 |
|
| 1987 |
Tan TY, Gösele U. Destruction mechanism of III‐V compound quantum well structures due to impurity diffusion Journal of Applied Physics. 61: 1841-1845. DOI: 10.1063/1.338027 |
0.383 |
|
| 1986 |
Oehrlein GS, Tan TY, Kleinhenz RL, Lindstrom JL. On the Question of Oxygen Diffusion During Oxygen Related Thermal Donor Formation In Silicon. Mrs Proceedings. 71. DOI: 10.1557/Proc-71-65 |
0.346 |
|
| 1986 |
Tan TY, Kung CY. Oxygen precipitation retardation and recovery phenomena in Czochralski silicon: Experimental observations, nuclei dissolution model, and relevancy with nucleation issues Journal of Applied Physics. 59: 917-931. DOI: 10.1063/1.336564 |
0.381 |
|
| 1985 |
Tan TY. Exigent-Accommodation-Volume of Precipitation and Formation of Oxygen Precipitates in Silicon Mrs Proceedings. 59: 269. DOI: 10.1557/Proc-59-269 |
0.372 |
|
| 1985 |
Tan TY, Kleinhenz R, Schneider CP. On the Kinetics of Oxygen Clustering and Thermal Donor Formation in Czochralski Silicon Mrs Proceedings. 59. DOI: 10.1557/Proc-59-195 |
0.315 |
|
| 1985 |
Tan TY, Yang KH, Schneider CP. Observation of a doping‐dependent orientation effect of the depletion of silicon self‐interstitials during oxidation Journal of Applied Physics. 57: 1812-1815. DOI: 10.1063/1.334408 |
0.486 |
|
| 1985 |
Tan TY, Gösele U. Point defects, diffusion processes, and swirl defect formation in silicon Applied Physics A. 37: 1-17. DOI: 10.1007/Bf00617863 |
0.437 |
|
| 1985 |
Braunig D, Yang KH, Tan TY, Schneider CP. In depth generation lifetime profiling of heat‐treated czochralski silicon Physica Status Solidi (a). 92: 327-335. DOI: 10.1002/Pssa.2210920134 |
0.416 |
|
| 1984 |
Yang KH, Tan TY. On the Interaction of Intrinsic and Extrinsic Gettering Schemes in Silicon Mrs Proceedings. 36: 223. DOI: 10.1557/Proc-36-223 |
0.319 |
|
| 1984 |
Butz R, Rubloff GW, Tan TY, Ho PS. Chemical and structural aspects of reaction at the Ti/Si interface Physical Review B. 30: 5421-5429. DOI: 10.1103/Physrevb.30.5421 |
0.419 |
|
| 1984 |
Clabes JG, Rubloff GW, Tan TY. Chemical reaction and Schottky-barrier formation at V/Si interfaces Physical Review B. 29: 1540-1550. DOI: 10.1103/Physrevb.29.1540 |
0.468 |
|
| 1983 |
Tan TY. Intrinsic Point Defects and Diffusion Processes in Silicon Mrs Proceedings. 31. DOI: 10.1557/Proc-31-127 |
0.484 |
|
| 1983 |
Schmid PE, Ho PS, Föll H, Tan TY. Effects of variations of silicide characteristics on the Schottky-barrier height of silicide-silicon interfaces Physical Review B. 28: 4593-4601. DOI: 10.1103/Physrevb.28.4593 |
0.477 |
|
| 1983 |
Tan TY, Ginsberg BJ. Observation of oxidation‐enhanced and oxidation‐retarded diffusion of antimony in silicon Applied Physics Letters. 42: 448-450. DOI: 10.1063/1.93966 |
0.489 |
|
| 1983 |
Tan TY, Gösele U, Morehead FF. On the nature of point defects and the effect of oxidation on substitutional dopant diffusion in silicon Applied Physics A. 31: 97-108. DOI: 10.1007/Bf00616312 |
0.425 |
|
| 1982 |
GÖsele U, Tan TY. The Nature of Point Defects and their Influence on Diffusion Processes in Silicon at High Temperatures Mrs Proceedings. 14: 45. DOI: 10.1557/Proc-14-45 |
0.433 |
|
| 1982 |
GÖsele U, Tan TY. Thermal Donor Formation by the Agglomeration of Oxygen in Silicon Mrs Proceedings. 14. DOI: 10.1557/Proc-14-153 |
0.35 |
|
| 1982 |
Tan TY, Ginsberg BJ. Observation of Oxidation-Enhanced and -Retarded Diffusion of Antimony in Silicon: The Behavior of (111) Wafers Mrs Proceedings. 14: 141. DOI: 10.1557/Proc-14-141 |
0.421 |
|
| 1982 |
Tan TY, Gösele U. Oxidation‐enhanced or retarded diffusion and the growth or shrinkage of oxidation‐induced stacking faults in silicon Applied Physics Letters. 40: 616-619. DOI: 10.1063/1.93200 |
0.483 |
|
| 1982 |
Tan TY, Gösele U. Kinetics of silicon stacking fault growth/shrinkage in an oxidizing ambient containing a chlorine compound Journal of Applied Physics. 53: 4767-4778. DOI: 10.1063/1.331312 |
0.32 |
|
| 1982 |
Gösele U, Tan TY. Oxygen diffusion and thermal donor formation in silicon Applied Physics A. 28: 79-92. DOI: 10.1007/Bf00617135 |
0.427 |
|
| 1981 |
Smith DA, Tan TY. Effect of Doping and Oxidation on Grain Growth in Polysilicon Mrs Proceedings. 5. DOI: 10.1557/Proc-5-65 |
0.367 |
|
| 1981 |
Tan TY, Föll H, Hu SM. On the diamond-cubic to hexagonal phase transformation in silicon Philosophical Magazine. 44: 127-140. DOI: 10.1080/01418618108244498 |
0.389 |
|
| 1981 |
Tan TY. Atomic modelling of homogeneous nucleation of dislocations from condensation of point defects in silicon Philosophical Magazine a: Physics of Condensed Matter, Structure, Defects and Mechanical Properties. 44: 101-125. DOI: 10.1080/01418618108244497 |
0.317 |
|
| 1981 |
Tan TY, Gösele U. Growth kinetics of oxidation‐induced stacking faults in silicon: A new concept Applied Physics Letters. 39: 86-88. DOI: 10.1063/1.92526 |
0.425 |
|
| 1981 |
Corbett JW, Karins JP, Tan TY. Ion-induced defects in semiconductors Nuclear Instruments and Methods. 457-476. DOI: 10.1016/0029-554X(81)90717-5 |
0.328 |
|
| 1980 |
Tice WK, Tan TY. Precipitation of Oxygen and Intrinsic Gettering in Silicon Mrs Proceedings. 2: 367. DOI: 10.1557/Proc-2-367 |
0.381 |
|
| 1980 |
Krakow W, Tan TY, Foell H. Detection of Point Defect Chains in Ion Irradiated Silicon by High Resolution Electron Microscopy Mrs Proceedings. 2: 185. DOI: 10.1557/Proc-2-185 |
0.304 |
|
| 1980 |
Tan TY, Foell H, Mader S, Krakow W. A Tentative Identification of the Nature of {113} Stacking Faults in Si – Model and Experiment Mrs Proceedings. 2. DOI: 10.1557/Proc-2-179 |
0.341 |
|
| 1980 |
Foell H, Tan TY, Krakow W. Undissociated Dislocations and Intermediate Defects in as+ Ion Damaged Silicon Mrs Proceedings. 2. DOI: 10.1557/Proc-2-173 |
0.34 |
|
| 1980 |
Tan TY. Dislocation Nucleation Models From Point Defect Condensations in Silicon and Germanium Mrs Proceedings. 2. DOI: 10.1557/Proc-2-163 |
0.417 |
|
| 1980 |
Tan TY, Föll H, Krakow W. Detection of extended interstitial chains in ion‐damaged silicon Applied Physics Letters. 37: 1102-1104. DOI: 10.1063/1.91888 |
0.379 |
|
| 1979 |
Ho PS, Tan TY, Lewis JE, Rubloff GW. CHEMICAL AND STRUCTURAL PROPERTIES OF THE Pd/Si INTERFACE DURING THE INITIAL STAGES OF SILICIDE FORMATION. Journal of Vacuum Science and Technology. 16: 1120-1124. DOI: 10.1116/1.570171 |
0.405 |
|
| 1979 |
Tan TY. Residual stacking-fault-type contrast in silicon after apparent unfaulting reactions Applied Physics Letters. 34: 714-716. DOI: 10.1063/1.90616 |
0.337 |
|
| 1977 |
Tan TY, Gardner EE, Tice WK. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si Applied Physics Letters. 30: 175-176. DOI: 10.1063/1.89340 |
0.443 |
|
| 1976 |
Tan TY, Tice WK. Oxygen precipitation and the generation of dislocations in silicon Philosophical Magazine. 34: 615-631. DOI: 10.1080/14786437608223798 |
0.351 |
|
| 1976 |
Tice WK, Tan TY. Nucleation of CuSi precipitate colonies in oxygen‐rich silicon Applied Physics Letters. 28: 564-565. DOI: 10.1063/1.88825 |
0.444 |
|
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