| Year |
Citation |
Score |
| 2020 |
Han D, Ruiz DC, Bonomo G, Saranovac T, Ostinelli OJS, Bolognesi CR. Low-Noise Microwave Performance of 30 nm GaInAs MOS-HEMTs: Comparison to Low-Noise HEMTs Ieee Electron Device Letters. 41: 1320-1323. DOI: 10.1109/Led.2020.3012017 |
0.396 |
|
| 2019 |
Bolognesi CR, Quan W, Arabhavi AM, Saranovac T, Flückiger R, Ostinelli O, Wen X, Luisier M. Advances in InP/Ga(In)AsSb double heterojunction bipolar transistors (DHBTs) Japanese Journal of Applied Physics. 58. DOI: 10.7567/1347-4065/Ab02E6 |
0.42 |
|
| 2019 |
Saranovac T, Ruiz DC, Han D, Arabhavi AM, Ostinelli O, Bolognesi CR. Effects of Electrochemical Etching on InP HEMT Fabrication Ieee Transactions On Semiconductor Manufacturing. 32: 496-501. DOI: 10.1109/Tsm.2019.2940320 |
0.392 |
|
| 2019 |
Ruiz DC, Saranovac T, Han D, Hambitzer A, Arabhavi AM, Ostinelli O, Bolognesi CR. InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs Ieee Transactions On Electron Devices. 66: 4685-4691. DOI: 10.1109/Ted.2019.2940638 |
0.38 |
|
| 2018 |
Bolognesi CR. Advances in InP Double Heterojunction Bipolar Transistors The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2018.D-5-01 |
0.374 |
|
| 2018 |
Mukherjee C, Raya C, Ardouin B, Deng M, Fregonese S, Zimmer T, Nodjiadjim V, Riet M, Dupuy J, Luisier M, Quan W, Arabhavi A, Bolognesi CR, Maneux C. Scalable Compact Modeling of III–V DHBTs: Prospective Figures of Merit Toward Terahertz Operation Ieee Transactions On Electron Devices. 65: 5357-5364. DOI: 10.1109/Ted.2018.2876551 |
0.342 |
|
| 2018 |
Weimann NG, Johansen TK, Stoppel D, Matalla M, Brahem M, Nosaeva K, Boppel S, Volkmer N, Ostermay I, Krozer V, Ostinelli O, Bolognesi CR. Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With ${f}_{\text{max}}$ ~ 0.53 THz Ieee Transactions On Electron Devices. 65: 3704-3710. DOI: 10.1109/Ted.2018.2854546 |
0.41 |
|
| 2018 |
Shivan T, Weimann N, Hossain M, Stoppel D, Boppel S, Ostinelli O, Doerner R, Bolognesi CR, Krozer V, Heinrich W. A Highly Efficient Ultrawideband Traveling-Wave Amplifier in InP DHBT Technology Ieee Microwave and Wireless Components Letters. 28: 1029-1031. DOI: 10.1109/Lmwc.2018.2871336 |
0.351 |
|
| 2018 |
Quan W, Arabhavi AM, Fluckiger R, Ostinelli O, Bolognesi CR. Quaternary Graded-Base InP/GaInAsSb DHBTs With ${f}_{\text{T}}$ / ${f}_{\text{MAX}}$ = 547/784 GHz Ieee Electron Device Letters. 39: 1141-1144. DOI: 10.1109/Led.2018.2849351 |
0.342 |
|
| 2017 |
Saranovac T, Hambitzer A, Ruiz DC, Ostinelli O, Bolognesi CR. Pt Gate Sink-In Process Details Impact on InP HEMT DC and RF Performance Ieee Transactions On Semiconductor Manufacturing. 30: 462-467. DOI: 10.1109/Tsm.2017.2749479 |
0.372 |
|
| 2016 |
Marti D, Lugani L, Carlin J, Malinverni M, Grandjean N, Bolognesi CR. $W$ -Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon Ieee Electron Device Letters. 37: 1025-1028. DOI: 10.1109/Led.2016.2581301 |
0.416 |
|
| 2015 |
Marti D, Tirelli S, Teppati V, Lugani L, Carlin J, Malinverni M, Grandjean N, Bolognesi CR. 94-GHz Large-Signal Operation of AlInN/GaN High-Electron-Mobility Transistors on Silicon With Regrown Ohmic Contacts Ieee Electron Device Letters. 36: 17-19. DOI: 10.1109/Led.2014.2367093 |
0.442 |
|
| 2014 |
Flückiger R, Lövblom R, Alexandrova M, Ostinelli O, Bolognesi CR. Type-II InP/GaAsSb double-heterojunction bipolar transistors with fMAX > 700 GHz Applied Physics Express. 7: 34105. DOI: 10.7567/Apex.7.034105 |
0.441 |
|
| 2014 |
Teppati V, Benedickter H, Marti D, Garelli M, Tirelli S, Lovblom R, Fluckiger R, Alexandrova M, Ostinelli O, Bolognesi CR. A $W$ -Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques Ieee Transactions On Microwave Theory and Techniques. 62: 148-153. DOI: 10.1109/Tmtt.2013.2292042 |
0.379 |
|
| 2014 |
Alexandrova M, Flueckiger R, Lovblom R, Ostinelli O, Bolognesi CR. GaAsSb-Based DHBTs With a Reduced Base Access Distance and $f_{\mathrm {T}}/f_{\mathrm {MAX}}=$ 503/780 GHz Ieee Electron Device Letters. 35: 1218-1220. DOI: 10.1109/Led.2014.2364622 |
0.391 |
|
| 2014 |
Fluckiger R, Lovblom R, Alexandrova M, Ostinelli O, Bolognesi CR. Uniform-Base InP/GaInAsSb DHBTs Exhibiting $f_{\rm MAX}/f_{\rm T}>635/420~{\rm GHz}$ Ieee Electron Device Letters. 35: 166-168. DOI: 10.1109/Led.2013.2295424 |
0.412 |
|
| 2014 |
Lugani L, Malinverni M, Tirelli S, Marti D, Giraud E, Carlin J-, Bolognesi CR, Grandjean N. n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts Applied Physics Letters. 105: 202113. DOI: 10.1063/1.4902347 |
0.392 |
|
| 2014 |
Fedoryshyn Y, Ostinelli O, Alt A, Pallin A, Bolognesi CR. Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures Journal of Applied Physics. 115: 43718. DOI: 10.1063/1.4863332 |
0.378 |
|
| 2013 |
Tirelli S, Marti D, Lugani L, Carlin J, Grandjean N, Bolognesi CR. AlN-Capped AlInN/GaN High Electron Mobility Transistors with 4.5 W/mm Output Power at 40 GHz Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.08Jn16 |
0.439 |
|
| 2013 |
Tirelli S, Lugani L, Marti D, Carlin J, Grandjean N, Bolognesi CR. AlInN-Based HEMTs for Large-Signal Operation at 40 GHz Ieee Transactions On Electron Devices. 60: 3091-3098. DOI: 10.1109/Ted.2013.2262136 |
0.429 |
|
| 2013 |
Alt AR, Bolognesi CR. Temperature Dependence of Annealed and Nonannealed HEMT Ohmic Contacts Between 5 and 350 K Ieee Transactions On Electron Devices. 60: 787-792. DOI: 10.1109/Ted.2012.2234751 |
0.326 |
|
| 2013 |
Alt AR, Marti D, Bolognesi CR. Transistor Modeling: Robust Small-Signal Equivalent Circuit Extraction in Various HEMT Technologies Ieee Microwave Magazine. 14: 83-101. DOI: 10.1109/Mmm.2013.2248593 |
0.343 |
|
| 2013 |
Lovblom R, Fluckiger R, Alexandrova M, Ostinelli O, Bolognesi CR. InP/GaAsSb DHBTs With Simultaneous $f_{\rm T}/f_{\rm MAX}=428/621~{\rm GHz}$ Ieee Electron Device Letters. 34: 984-986. DOI: 10.1109/Led.2013.2269711 |
0.453 |
|
| 2013 |
Lovblom R, Fluckiger R, Ostinelli O, Alexandrova M, Bolognesi CR. Emitter Size Effect in GaAsSb-Based DHBTs With AlInP and GaInP Emitters Ieee Electron Device Letters. 34: 602-604. DOI: 10.1109/Led.2013.2250897 |
0.348 |
|
| 2012 |
Marti D, Tirelli S, Alt AR, Roberts J, Bolognesi CR. 150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon Ieee Electron Device Letters. 33: 1372-1374. DOI: 10.1109/Led.2012.2204855 |
0.406 |
|
| 2012 |
Fluckiger R, Lovblom R, Ostinelli O, Benedickter H, Bolognesi CR. InP/GaAsSb DHBTs Fabricated in a Low-Temperature Teflon Planarization Process Ieee Electron Device Letters. 33: 1135-1137. DOI: 10.1109/Led.2012.2201443 |
0.45 |
|
| 2012 |
Liu L, Alt AR, Benedickter H, Bolognesi CR. InP-HEMT X-band Low-Noise Amplifier With Ultralow 0.6-mW Power Consumption Ieee Electron Device Letters. 33: 209-211. DOI: 10.1109/Led.2011.2176713 |
0.385 |
|
| 2011 |
Ostinelli O, Bolognesi CR. Demonstration of Ditertiary Butyl Sulfide as a Dopant Source for n-Type InP by Metalorganic Vapor-Phase Epitaxy Applied Physics Express. 4: 85501. DOI: 10.1143/Apex.4.085501 |
0.343 |
|
| 2011 |
Marti D, Bolognesi CR, Cordier Y, Chmielowska M, Ramdani M. RF Performance of AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon (110) Applied Physics Express. 4: 64105. DOI: 10.1143/Apex.4.064105 |
0.461 |
|
| 2011 |
Tirelli S, Marti D, Sun H, Alt AR, Carlin J-, Grandjean N, Bolognesi CR. Fully Passivated AlInN/GaN HEMTs With $f_{\rm T}/f_{\rm MAX}$ of 205/220 GHz Ieee Electron Device Letters. 32: 1364-1366. DOI: 10.1109/Led.2011.2162087 |
0.432 |
|
| 2011 |
Sun H, Alt AR, Tirelli S, Marti D, Benedickter H, Piner E, Bolognesi CR. Nanometric AlGaN/GaN HEMT Performance with Implant or Mesa Isolation Ieee Electron Device Letters. 32: 1056-1058. DOI: 10.1109/Led.2011.2151172 |
0.366 |
|
| 2011 |
Teppati V, Zeng Y, Ostinelli O, Bolognesi CR. Highly Efficient InP/GaAsSb DHBTs With 62% Power-Added Efficiency at 40 GHz Ieee Electron Device Letters. 32: 886-888. DOI: 10.1109/Led.2011.2143690 |
0.332 |
|
| 2011 |
Lövblom R, Flückiger R, Zeng Y, Ostinelli O, Alt AR, Benedickter H, Bolognesi CR. InP/GaAsSb DHBTs With 500-GHz Maximum Oscillation Frequency Ieee Electron Device Letters. 32: 629-631. DOI: 10.1109/Led.2011.2118738 |
0.438 |
|
| 2011 |
Sun H, Alt AR, Benedickter H, Feltin E, Carlin J, Gonschorek M, Grandjean N, Bolognesi CR. High-speed and low-noise AlInN/GaN HEMTs on SiC Physica Status Solidi (a). 208: 429-433. DOI: 10.1002/Pssa.201000518 |
0.418 |
|
| 2010 |
Marti D, Vetter M, Alt AR, Benedickter H, Bolognesi CR. 110GHz characterization of coplanar waveguides on GaN-on-Si substrates Applied Physics Express. 3. DOI: 10.1143/Apex.3.124101 |
0.385 |
|
| 2010 |
Sun H, Alt AR, Benedickter H, Bolognesi CR, Feltin E, Carlin J{, Gonschorek M, Grandjean N. Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F-T=143 GHz Applied Physics Express. 3: 94101. DOI: 10.1143/Apex.3.094101 |
0.46 |
|
| 2010 |
Sun H, Alt AR, Benedickter H, Feltin E, Carlin J, Gonschorek M, Grandjean N, Bolognesi CR. Low-Noise Microwave Performance of 0.1 $\mu$ m Gate AlInN/GaN HEMTs on SiC Ieee Microwave and Wireless Components Letters. 20: 453-455. DOI: 10.1109/Lmwc.2010.2049008 |
0.387 |
|
| 2010 |
Zeng Y, Ostinelli O, Lövblom R, Alt AR, Benedickter H, Bolognesi CR. 400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance Ieee Electron Device Letters. 31: 1122-1124. DOI: 10.1109/Led.2010.2061213 |
0.402 |
|
| 2010 |
Sun H, Alt AR, Benedickter H, Feltin E, Carlin J-, Gonschorek M, Grandjean NR, Bolognesi CR. 205-GHz (Al,In)N/GaN HEMTs Ieee Electron Device Letters. 31: 957-959. DOI: 10.1109/Led.2010.2055826 |
0.471 |
|
| 2010 |
Tirelli S, Marti D, Sun H, Alt AR, Benedickter H, Piner EL, Bolognesi CR. 107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies Ieee Electron Device Letters. 31: 296-298. DOI: 10.1109/Led.2009.2039847 |
0.418 |
|
| 2010 |
Sun H, Alt AR, Benedickter H, Feltin E, Carlin J, Gonschorek M, Grandjean N, Bolognesi CR. 100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With Ieee Electron Device Letters. 31: 293-295. DOI: 10.1109/Led.2009.2039845 |
0.384 |
|
| 2010 |
Ostinelli O, Alt AR, Lövblom R, Bolognesi CR. Growth and characterization of iron-doped semi-insulating InP buffer layers for Al-free GaInP/GaInAs high electron mobility transistors Journal of Applied Physics. 108: 114502. DOI: 10.1063/1.3516490 |
0.445 |
|
| 2010 |
Zeng Y, Lövblom R, Ostinelli O, Bolognesi CR. (Ga,In)P emitter composition effect on the performance of (Ga,In)P/GaAsSb/InP DHBTs grown by MOCVD Physica Status Solidi (C). 7: 2490-2493. DOI: 10.1002/Pssc.200983883 |
0.339 |
|
| 2009 |
Subramanian A, Alt AR, Dong L, Kratochvil BE, Bolognesi CR, Nelson BJ. Electrostatic actuation and electromechanical switching behavior of one-dimensional nanostructures. Acs Nano. 3: 2953-64. PMID 19739601 DOI: 10.1021/Nn900436X |
0.374 |
|
| 2009 |
Sun H, Alt AR, Marti D, Vetter M, Benedickter H, Bolognesi CR. Small-Signal Microwave Performance Comparison of Deep Submicron AlGaN/GaN High Electron Mobility Transistors on High-Resistivity Silicon and Insulating Substrates Applied Physics Express. 2: 111002. DOI: 10.1143/Apex.2.111002 |
0.415 |
|
| 2009 |
Sun H, Alt AR, Benedickter H, Bolognesi CR, Feltin E, Carlin J-, Gonschorek M, Grandjean N, Maier T, Quay R. 102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz Ieee Electron Device Letters. 30: 796-798. DOI: 10.1109/Led.2009.2023603 |
0.404 |
|
| 2009 |
Sun H, Alt AR, Benedickter H, Bolognesi CR. High-Performance 0.1- $\mu\hbox{m}$ Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz Ieee Electron Device Letters. 30: 107-109. DOI: 10.1109/Led.2008.2010339 |
0.422 |
|
| 2009 |
Sun HF, Alt AR, Benedickter H, Bolognesi CR. 100 nm gate AlGaN/GaN HEMTs on silicon with f T = 90 GHz Electronics Letters. 45: 376-377. DOI: 10.1049/El.2009.0074 |
0.46 |
|
| 2009 |
Lackner D, Pitts OJ, Najmi S, Sandhu P, Kavanagh KL, Yang A, Steger M, Thewalt MLW, Wang Y, McComb DW, Bolognesi CR, Watkins SP. Growth of InAsSb/InAs MQWs on GaSb for mid-IR photodetector applications Journal of Crystal Growth. 311: 3563-3567. DOI: 10.1016/J.Jcrysgro.2009.04.027 |
0.374 |
|
| 2009 |
Ostinelli O, Bolognesi CR. Impact of CBr4, V/III ratio, temperature and AsH3 concentration on MOVPE growth of GaAsSb:C Journal of Crystal Growth. 311: 1508-1514. DOI: 10.1016/J.Jcrysgro.2009.01.122 |
0.312 |
|
| 2008 |
Bolognesi CR, Liu H, Ostinelli O, Zeng Y. Development of Ultrahigh-Wideband InP/GaAsSb/InP DHBTs (Invited) The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2008.G-2-1 |
0.301 |
|
| 2008 |
Liu HG, Ostinelli O, Zeng YP, Bolognesi CR. Emitter-Size Effects and Ultimate Scalability of InP:GaInP/GaAsSb/InP DHBTs Ieee Electron Device Letters. 29: 546-548. DOI: 10.1109/Led.2008.920850 |
0.408 |
|
| 2008 |
Zeng YP, Ostinelli O, Liu HG, Bolognesi CR. Effects of arsenic mole fraction x on the gain characteristics of type-II InP/GaAsxSb1−x DHBTs Solid-State Electronics. 52: 1202-1206. DOI: 10.1016/J.Sse.2008.05.007 |
0.379 |
|
| 2007 |
Liu H, Ostinelli O, Zeng Y, Bolognesi CR. High-Gain Arsenic-Rich n-p-n InP/GaAsSb DHBTs With $F_{T} ≫ \hbox{420}\ \hbox{GHz}$ Ieee Transactions On Electron Devices. 54: 2792-2795. DOI: 10.1109/Ted.2007.904981 |
0.426 |
|
| 2007 |
Liu HG, Ostinelli O, Zeng YP, Bolognesi CR. High-Current-Gain InP/GaInP/GaAsSb/InP DHBTs With $f_{T} = \hbox{436}\ \hbox{GHz}$ Ieee Electron Device Letters. 28: 852-855. DOI: 10.1109/Led.2007.905461 |
0.472 |
|
| 2007 |
Zhou W, Tang CW, Zhu J, Lau KM, Zeng Y, Liu HG, Tao NG, Bolognesi CR. Metamorphic Heterostructure InP/GaAsSb/InP HBTs on GaAs Substrates by MOCVD Ieee Electron Device Letters. 28: 539-542. DOI: 10.1109/Led.2007.899455 |
0.431 |
|
| 2007 |
Sun HF, Alt AR, Bolognesi CR. Submicrometer Copper T-Gate AlGaN/GaN HFETs: The Gate Metal Stack Effect Ieee Electron Device Letters. 28: 350-353. DOI: 10.1109/Led.2007.895380 |
0.323 |
|
| 2007 |
Tao NG, Bolognesi CR. Kirk effect mechanism in type-II InPGaAsSb double heterojunction bipolar transistors Journal of Applied Physics. 102. DOI: 10.1063/1.2783764 |
0.423 |
|
| 2007 |
Sun HF, Bolognesi CR. Anomalous behavior of AlGaN∕GaN heterostructure field-effect transistors at cryogenic temperatures: From current collapse to current enhancement with cooling Applied Physics Letters. 90: 123505. DOI: 10.1063/1.2715032 |
0.36 |
|
| 2007 |
Sun HF, Bolognesi CR. Impact of selective Al/sub 2/O/sub 3/ passivation on current collapse in AlGaN/GaN HEMTs Electronics Letters. 43: 1314-1315. DOI: 10.1049/El:20072160 |
0.374 |
|
| 2007 |
Tao NG, Liu HG, Bolognesi CR. Impact of surface state modeling on the characteristics of InP/GaAsSb/InP DHBTs Solid-State Electronics. 51: 995-1001. DOI: 10.1016/J.Sse.2007.04.011 |
0.342 |
|
| 2007 |
Ruiz-Palmero JM, Hammer U, Jäckel H, Liu H, Bolognesi CR. Comparative technology assessment of future InP HBT ultrahigh-speed digital circuits Solid-State Electronics. 51: 842-859. DOI: 10.1016/J.Sse.2007.04.005 |
0.379 |
|
| 2007 |
Tao NGM, Liu HG, Bolognesi CR. Two-dimensional simulation of type-II InP/GaAsSb/InP double heterojunction bipolar transistors Physica Status Solidi (C). 4: 1675-1679. DOI: 10.1002/Pssc.200674269 |
0.381 |
|
| 2007 |
Sun HF, DiSanto DW, Bolognesi CR. Performance comparison of Cu and Ni gates for deep submicrometer AlGaN/GaN HFETs Physica Status Solidi (C). 4: 1658-1661. DOI: 10.1002/Pssc.200674259 |
0.381 |
|
| 2006 |
DiSanto DW, Bolognesi CR. At-Bias Extraction of Access Parasitic Resistances in AlGaN/GaN HEMTs: Impact on Device Linearity and Channel Electron Velocity Ieee Transactions On Electron Devices. 53: 2914-2919. DOI: 10.1109/Ted.2006.885663 |
0.381 |
|
| 2006 |
Liu HG, Watkins SP, Bolognesi CR. 15-nm base type-II InP/GaAsSb/InP DHBTs with F/sub T/=384 GHz and a 6-V BV/sub CEO/ Ieee Transactions On Electron Devices. 53: 559-561. DOI: 10.1109/Ted.2005.863542 |
0.367 |
|
| 2006 |
DiSanto DW, Sun HF, Bolognesi CR. Ozone passivation of slow transient current collapse in AlGaN∕GaN field-effect transistors: The role of threading dislocations and the passivation mechanism Applied Physics Letters. 88: 13504. DOI: 10.1063/1.2161810 |
0.339 |
|
| 2006 |
Rao T, So M, Jiang W, Mayer T, Roorda S, Gujrathi S, Thewalt M, Bolognesi C, Watkins S. Optical and electrical characterization of OMVPE-grown AlGaAsSb epitaxial layers on InP substrates Journal of Crystal Growth. 287: 532-535. DOI: 10.1016/J.Jcrysgro.2005.10.026 |
0.347 |
|
| 2006 |
DiSanto DW, Bolognesi CR. At bias extraction of parasitic source and drain resistances in AlGaN/GaN HFETs: bias dependence and implications for device modelling and physics Physica Status Solidi (C). 3: 478-481. DOI: 10.1002/Pssc.200564108 |
0.387 |
|
| 2006 |
Liu HG, DiSanto DW, Watkins SP, Bolognesi CR. InP/GaAsSb/InP DHBTs with fT = 300 GHz and high maximum oscillation frequencies: the effect of scaling on device performance Physica Status Solidi (C). 3: 461-464. DOI: 10.1002/Pssc.200564106 |
0.403 |
|
| 2005 |
Tao NGM, Liu H, Bolognesi CR. Surface recombination currents in "Type-II" NpN InP-GaAsSb-InP self-aligned DHBTs Ieee Transactions On Electron Devices. 52: 1061-1066. DOI: 10.1109/Ted.2005.848101 |
0.422 |
|
| 2005 |
Zheng L, Zhang X, Zeng Y, Tatavarti SR, Watkins SP, Bolognesi CR, Demiguel S, Campbell JC. Demonstration of high-speed staggered lineup GaAsSb-InP unitraveling carrier photodiodes Ieee Photonics Technology Letters. 17: 651-653. DOI: 10.1109/Lpt.2004.842343 |
0.411 |
|
| 2005 |
Bolognesi CR. BV/sub CEO/--BV/sub CBO/ separation and sharpness of breakdown in high-speed bipolar transistors Ieee Electron Device Letters. 26: 479-482. DOI: 10.1109/Led.2005.851092 |
0.411 |
|
| 2005 |
Bolognesi CR, Liu HG, Tao N, Zhang X, Bagheri-Najimi S, Watkins SP. Neutral base recombination in InP∕GaAsSb∕InP double-heterostructure bipolar transistors: Suppression of Auger recombination in p+ GaAsSb base layers Applied Physics Letters. 86: 253506. DOI: 10.1063/1.1949290 |
0.412 |
|
| 2005 |
DiSanto DW, Bolognesi CR. Effect of gate-source access region stress on current collapse in AlGaN/GaN HFETs Electronics Letters. 41: 503-504. DOI: 10.1049/El:20050336 |
0.337 |
|
| 2004 |
Liu HG, Tao N, Watkins SP, Bolognesi CR. Extraction of the average collector velocity in high-speed "Type-II" InP-GaAsSb-InP DHBTs Ieee Electron Device Letters. 25: 769-771. DOI: 10.1109/Led.2004.838553 |
0.376 |
|
| 2004 |
Liu HG, Wu JQ, Tao N, Firth AV, Griswold EM, MacElwee TW, Bolognesi CR. High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100 mm InP substrates using PH3 and AsH3 Journal of Crystal Growth. 267: 592-597. DOI: 10.1016/J.Jcrysgro.2004.04.035 |
0.44 |
|
| 2003 |
Dvorak MW, Bolognesi CR. On the accuracy of direct extraction of the heterojunction-bipolar-transistor equivalent-circuit model parameters C/sub /spl pi//, C/sub BC/, and R/sub E/ Ieee Transactions On Microwave Theory and Techniques. 51: 1640-1649. DOI: 10.1109/Tmtt.2003.812557 |
0.345 |
|
| 2002 |
Bolognesi CR, Dvorak MW, Matine N, Pitts OJ, Watkins SP. Ultrahigh Performance Staggered Lineup (“Type-II”) InP/GaAsSb/InP NpN Double Heterojunction Bipolar Transistors Japanese Journal of Applied Physics. 41: 1131-1135. DOI: 10.1143/Jjap.41.1131 |
0.747 |
|
| 2002 |
DiSanto DW, Kwan AC, Bolognesi CR. Gate-to-drain separation and transistor cutoff frequency in wet etched AlGaN/GaN HFETs Electronics Letters. 38: 921-923. DOI: 10.1049/El:20020641 |
0.411 |
|
| 2001 |
Dvorak MW, Bolognesi CR, Pitts OJ, Watkins SP. 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BV/sub CEO/>6 V Ieee Electron Device Letters. 22: 361-363. DOI: 10.1109/55.936343 |
0.722 |
|
| 2001 |
Bolognesi C, Dvorak M, Yeo P, Xu X, Watkins S. InP/GaAsSb/InP double HBTs: a new alternative for InP-based DHBTs Ieee Transactions On Electron Devices. 48: 2631-2639. DOI: 10.1109/16.960389 |
0.405 |
|
| 2001 |
Fink V, Chevalier E, Pitts OJ, Dvorak MW, Kavanagh KL, Bolognesi CR, Watkins SP, Hummel S, Moll N. Anisotropic resistivity correlated with atomic ordering in p-type GaAsSb Applied Physics Letters. 79: 2384-2386. DOI: 10.1063/1.1406982 |
0.681 |
|
| 2000 |
Dvorak MW, Matine N, Bolognesi CR, Xu XG, Watkins SP. Design and performance of InP/GaAsSb/InP double heterojunction bipolar transistors Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 18: 761-764. DOI: 10.1116/1.582175 |
0.75 |
|
| 2000 |
Maher H, DiSanto DW, Soerensen G, Bolognesi CR, Tang H, Webb JB. Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors Applied Physics Letters. 77: 3833-3835. DOI: 10.1063/1.1330226 |
0.364 |
|
| 2000 |
Watkins SP, Pitts OJ, Dale C, Xu XG, Dvorak MW, Matine N, Bolognesi CR. Heavily carbon-doped GaAsSb grown on InP for HBT applications Journal of Crystal Growth. 221: 59-65. DOI: 10.1016/S0022-0248(00)00649-7 |
0.697 |
|
| 1999 |
Matine N, Dvorak MW, Pelouard J, Pardo F, Bolognesi CR. Fabrication and Characterization of InP Heterojunction Bipolar Transistors with Emitter Edges Parallel to [001] and [010] Crystal Orientations Japanese Journal of Applied Physics. 38: 1200-1203. DOI: 10.1143/Jjap.38.1200 |
0.719 |
|
| 1999 |
Bolognesi CR, Dvorak MW, Chow DH. Impact Ionization Effects On The Microwave Performance Of Inas Channel Heterostructure Field-Effect Transistors : The Role Of Channel Quantization Japanese Journal of Applied Physics. 38: 1190-1194. DOI: 10.1143/Jjap.38.1190 |
0.701 |
|
| 1999 |
Bolognesi CR, Matine N, Dvorak RW, Xu XG, Hu J, Watkins SP. Non-blocking collector InP/GaAs/sub 0.51/Sb/sub 0.49//InP double heterojunction bipolar transistors with a staggered lineup base-collector junction Ieee Electron Device Letters. 20: 155-157. DOI: 10.1109/55.753751 |
0.432 |
|
| 1999 |
Bolognesi CR, Dvorak MW, Chow DH. Impact ionization suppression by quantum confinement: Effects on the DC and microwave performance of narrow-gap channel InAs/AlSb HFET's Ieee Transactions On Electron Devices. 46: 826-832. DOI: 10.1109/16.760386 |
0.419 |
|
| 1999 |
Xu XG, Hu J, Watkins SP, Matine N, Dvorak MW, Bolognesi CR. Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors Applied Physics Letters. 74: 976-978. DOI: 10.1063/1.123428 |
0.731 |
|
| 1999 |
Matine N, Soerensen G, Bolognesi CR, DiSanto D, Xu X, Watkins SP. Electrical stress damage reversal in nonpassivated fully self-aligned InP HBTs by ozone surface treatment Electronics Letters. 35: 2229-2231. DOI: 10.1049/El:19991467 |
0.366 |
|
| 1999 |
Bolognesi C, Matine N, Xu X, Soerensen G, Watkins S. InP/GaAs0.51Sb0.49/InP fully self-aligned double heterojunction bipolar transistors with a C-doped base: a preliminary reliability study Microelectronics Reliability. 39: 1833-1838. DOI: 10.1016/S0026-2714(99)00192-4 |
0.48 |
|
| 1998 |
Watkins S, Xu X, Hu J, Ares R, Yeo P, Harrison D, Thewalt M, Bolognesi C, Springthorpe A. Phosphorus Passivation of GaAs Mrs Proceedings. 510. DOI: 10.1557/Proc-510-647 |
0.351 |
|
| 1998 |
Bolognesi CR, Dvorak MW, Chow DH. High-transconductance delta-doped InAs/AlSb HFETs with ultrathin silicon-doped InAs quantum well donor layer Ieee Electron Device Letters. 19: 83-85. DOI: 10.1109/55.661172 |
0.452 |
|
| 1998 |
Hu J, Xu XG, Stotz JAH, Watkins SP, Curzon AE, Thewalt MLW, Matine N, Bolognesi CR. Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy Applied Physics Letters. 73: 2799-2801. DOI: 10.1063/1.122594 |
0.364 |
|
| 1998 |
Matine N, Dvorak M, Bolognesi C, Xu X, Hu J, Watkins S, Thewalt M. Nearly ideal InP/GaAsSb/InP double heterojunction bipolar transistors with ballistically launched collector electrons Electronics Letters. 34: 1700. DOI: 10.1049/El:19981160 |
0.732 |
|
| 1998 |
Xu X, McLaughlin S, Hu J, Watkins S, Bolognesi C. Comparison of single- and double-barrier pseudomorphic InGaP/InGaAs HFETs Journal of Crystal Growth. 195: 687-693. DOI: 10.1016/S0022-0248(98)00588-0 |
0.396 |
|
| 1998 |
Bolognesi CR, Dvorak MW, Chow DH. Gate metallurgy effects in InAs/AlSb HFETs: preliminary results and demonstration of surface Fermi level shifts Journal of Electronic Materials. 27. DOI: 10.1007/S11664-998-0136-X |
0.396 |
|
| 1997 |
Bolognesi CR, Dvorak MW, Chow DH. Sidegating-Induced Negative Differential Resistance in MBE-Grown InAs/AlSb HFETs Japanese Journal of Applied Physics. 36: 1789-1794. DOI: 10.1143/Jjap.36.1789 |
0.732 |
|
| 1997 |
Harrison DA, Arès R, Watkins SP, Thewalt MLW, Bolognesi CR, Beckett DJS, SpringThorpe AJ. Large photoluminescence enhancements from epitaxial GaAs passivated by postgrowth phosphidization Applied Physics Letters. 70: 3275-3277. DOI: 10.1063/1.118426 |
0.35 |
|
| 1997 |
Bolognesi CR, Dvorak MW, Soerensen G, Watkins SP. Improved breakdown voltages in submicrometre planar GaAs MESFETs with a thin (Ga,ln)P surface layer Electronics Letters. 33: 636-637. DOI: 10.1049/El:19970394 |
0.727 |
|
| 1997 |
Watkins SP, Arès R, Soerensen G, Zhong W, Tran CA, Bryce JE, Bolognesi CR. Atomic force microscopy study of morphology and dislocation structure of InAs and GaSb grown on highly mismatched substrates Journal of Crystal Growth. 170: 788-793. DOI: 10.1016/S0022-0248(96)00633-1 |
0.357 |
|
| 1996 |
Bolognesi CR, Dvorak MW, Chow DH. Sidegating-Induced Negative Differential Resistance in MBE-Grown InAs/AlSb HFETs The Japan Society of Applied Physics. 1996: 548-549. DOI: 10.7567/Ssdm.1996.C-3-2 |
0.661 |
|
| 1996 |
Bolognesi CR, Chow DH. InAs/AlSb dual-gate HFETs Ieee Electron Device Letters. 17: 534-536. DOI: 10.1109/55.541772 |
0.425 |
|
| 1996 |
Dvorak MW, Bolognesi CR, Chow DH. Demonstration of NAND logic switching in InAs/AlSb dual-gate HFETs Electronics Letters. 32: 2273-2274. DOI: 10.1049/El:19961526 |
0.398 |
|
| 1995 |
Bolognesi CR, Rowlandson MB. Impact of fluorine incorporation in the polysilicon emitter of NPN bipolar transistors Ieee Electron Device Letters. 16: 172-174. DOI: 10.1109/55.382230 |
0.407 |
|
| 1994 |
J Koester S, Bolognesi CR, Hu EL, Kroemer H, Rooks MJ. Quantized conductance in an InAs/AlSb split-gate ballistic constriction with 1.0 microm channel length. Physical Review. B, Condensed Matter. 49: 8514-8517. PMID 10009627 DOI: 10.1103/Physrevb.49.8514 |
0.502 |
|
| 1994 |
Koester SJ, Bolognesi CR, Thomas M, Hu EL, Kroemer H, Rooks MJ. Determination of one-dimensional subband spacings in InAs/AlSb ballistic constrictions using magnetic-field measurements. Physical Review. B, Condensed Matter. 50: 5710-5712. PMID 9976920 DOI: 10.1103/Physrevb.50.5710 |
0.447 |
|
| 1994 |
Bolognesi CR, Caine EJ, Kroemer H. Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors Ieee Electron Device Letters. 15: 16-18. DOI: 10.1109/55.289476 |
0.586 |
|
| 1994 |
Utzmeier T, Schlösser T, Ensslin K, Kotthaus JP, Bolognesi CR, Nguyen C, Kroemer H. Lateral potential modulation in InAs/AlSb quantum wells by wet etching Solid-State Electronics. 37: 575-578. DOI: 10.1016/0038-1101(94)90250-X |
0.516 |
|
| 1993 |
Bolognesi CR, Werking JD, Caine EJ, Kroemer H, Hu EL. Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor Ieee Electron Device Letters. 14: 13-15. DOI: 10.1109/55.215085 |
0.592 |
|
| 1993 |
Bolognesi CR, Caine EJ, Kroemer H. Improved charge control and the frequency performance in InAs/AlSb HFET's Ieee Transactions On Electron Devices. 40: 2114. DOI: 10.1109/16.239786 |
0.566 |
|
| 1993 |
Koester SJ, Bolognesi CR, Rooks MJ, Hu EL, Kroemer H. Quantized conductance of ballistic constrictions in InAs/AlSb quantum wells Applied Physics Letters. 62: 1373-1375. DOI: 10.1063/1.108683 |
0.526 |
|
| 1993 |
Scriba J, Wixforth A, Kotthaus JP, Bolognesi C, Nguyen C, Kroemer H. Spin-and Landau-splitting of the cyclotron resonance in a nonparabolic two-dimensional electron system Solid State Communications. 86: 633-636. DOI: 10.1016/0038-1098(93)90829-C |
0.471 |
|
| 1993 |
Nguyen C, Brar B, Bolognesi CR, Pekarik JJ, Kroemer H, English JH. Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations Journal of Electronic Materials. 22: 255-258. DOI: 10.1007/Bf02665035 |
0.577 |
|
| 1992 |
Sela I, Bolognesi CR, Kroemer H. Single-mode behavior of AlSb1-xAsx alloys. Physical Review. B, Condensed Matter. 46: 16142-16143. PMID 10003753 DOI: 10.1103/Physrevb.46.16142 |
0.462 |
|
| 1992 |
Sela I, Samoska LA, Bolognesi CR, Gossard AC, Kroemer H. Raman scattering from interface modes in Ga1-xInxSb/InAs superlattices. Physical Review. B, Condensed Matter. 46: 7200-7203. PMID 10002432 DOI: 10.1103/Physrevb.46.7200 |
0.505 |
|
| 1992 |
Werking JD, Bolognesi CR, Chang L-, Nguyen C, Hu EL, Kroemer H. High-transconductance InAs/AlSb heterojunction field-effect transistors with delta -doped AlSb upper barriers Ieee Electron Device Letters. 13: 164-166. DOI: 10.1109/55.144998 |
0.604 |
|
| 1992 |
Bolognesi CR, Kroemer H, English JH. Interface roughness scattering in InAs/AlSb quantum wells Applied Physics Letters. 61: 213-215. DOI: 10.1063/1.108221 |
0.539 |
|
| 1992 |
Sela I, Bolognesi CR, Samoska LA, Kroemer H. Study of interface composition and quality in AlSb/InAs/AlSb quantum wells by Raman scattering from interface modes Applied Physics Letters. 60: 3283-3285. DOI: 10.1063/1.106720 |
0.498 |
|
| 1991 |
Sela I, Campbell IH, Laurich BK, Smith DL, Samoska LA, Bolognesi CR, Gossard AC, Kroemer H. Raman scattering study of InAs/GaInSb strained layer superlattices Journal of Applied Physics. 70: 5608-5614. DOI: 10.1063/1.350174 |
0.529 |
|
| 1991 |
Campbell IH, Sela I, Laurich BK, Smith DL, Bolognesi CR, Samoska LA, Gossard AC, Kroemer H. Far-infrared photoresponse of the InAs/GaInSb superlattice Applied Physics Letters. 59: 846-848. DOI: 10.1063/1.105255 |
0.514 |
|
| Show low-probability matches. |
