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Hailing Cheng, Ph.D. - Publications

Affiliations: 
2011 University of Michigan, Ann Arbor, Ann Arbor, MI 
Area:
Solid State Physics, Quantum Physics
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12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2013 Field RL, Jin Y, Cheng H, Dannecker T, Jock RM, Wang YQ, Kurdak C, Goldman RS. Influence of N incorporation on persistent photoconductivity in GaAsN alloys Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.155303  0.632
2010 Dannecker T, Jin Y, Cheng H, Gorman CF, Buckeridge J, Uher C, Fahy S, Kurdak C, Goldman RS. Publisher's Note: Nitrogen composition dependence of electron effective mass inGaAs1−xNx[Phys. Rev. B82, 125203 (2010)] Physical Review B. 82. DOI: 10.1103/Physrevb.82.159903  0.612
2010 Dannecker T, Jin Y, Cheng H, Gorman CF, Buckeridge J, Uher C, Fahy S, Kurdak C, Goldman RS. Nitrogen composition dependence of electron effective mass in GaAs 1-xNx Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.125203  0.647
2010 Leach JH, Ni X, Li X, Wu M, Özgür U, Morko̧ H, Zhou L, Cullen DA, Smith DJ, Cheng H, Kurdak C, Meyer JR, Vurgaftman I. Bias dependent two-channel conduction in InAlN/AlN/GaN structures Journal of Applied Physics. 107. DOI: 10.1063/1.3330627  0.618
2010 Leach JH, Wu M, Ni X, Li X, Özgür U, Morkoç H, Liberis J, Šermukšnis E, Matulionis A, Cheng H, Kurdak C, Moon YT. Stress test measurements of lattice-matched InAlN/AlN/GaN HFET structures applications and materials Physica Status Solidi (a) Applications and Materials Science. 207: 1345-1347. DOI: 10.1002/Pssa.200983556  0.648
2009 Leach JH, Zhu CY, Wu M, Ni X, Li X, Xie J, Özgür U, Morko̧ H, Liberis J, Šermukšnis E, Matulionis A, Cheng H, Kurdak C. Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons Applied Physics Letters. 95. DOI: 10.1063/1.3271183  0.669
2009 Cheng H, Biyikli N, Xie J, Kurdak Ç, Morkoç H. Energy relaxation probed by weak antilocalization measurements in GaN heterostructures Journal of Applied Physics. 106: 103702. DOI: 10.1063/1.3253746  0.663
2009 Jin Y, He Y, Cheng H, Jock RM, Dannecker T, Reason M, Mintairov AM, Kurdak C, Merz JL, Goldman RS. Influence of Si–N complexes on the electronic properties of GaAsN alloys Applied Physics Letters. 95: 92109. DOI: 10.1063/1.3198207  0.631
2009 Jin Y, Jock RM, Cheng H, He Y, Mintarov AM, Wang Y, Kurdak C, Merz JL, Goldman RS. Influence of N interstitials on the electronic properties of GaAsN alloys Applied Physics Letters. 95. DOI: 10.1063/1.3187915  0.652
2008 Cheng H, Biyikli N, Özgür Ü, Kurdak Ç, Morkoç H, Litvinov V. Measurement of linear and cubic spin–orbit coupling parameters in AlGaN/AlN/GaN heterostructures with a polarization-induced two-dimensional electron gas Physica E: Low-Dimensional Systems and Nanostructures. 40: 1586-1589. DOI: 10.1016/J.Physe.2007.09.184  0.641
2007 Biyikli N, Ni X, Fu Y, Xie J, Morkoç H, Cheng H, Kurdak Ç, Vurgaftman I, Meyer J. Magnetotransport properties of AlxGa1−xN∕AlN∕GaN heterostructures grown on epitaxial lateral overgrown GaN templates Journal of Applied Physics. 101: 113710. DOI: 10.1063/1.2745253  0.649
2006 Kurdak Ç, Biyikli N, Cheng H, Ozgur U, Morkoç H, Litvinov VI. Spin-Orbit Coupling and Zero-Field Electron Spin Splitting in AlGaN/AlN/GaN Heterostructures with a Polarization Induced Two-Dimensional Electron Gas Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I01-02  0.641
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