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Kibog Park, Ph.D. - Publications

Affiliations: 
2006 Ohio State University, Columbus, Columbus, OH 
Area:
Condensed Matter Physics
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32 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Yoon HH, Song W, Jung S, Kim J, Mo K, Choi G, Jeong HY, Lee JH, Park K. Negative Fermi-level Pinning Effect of Metal/n-GaAs(001) Junction Induced by Graphene Interlayer. Acs Applied Materials & Interfaces. PMID 31755257 DOI: 10.1021/Acsami.9B12074  0.39
2019 Choi G, Yoon HH, Park K, Kim J, Jung S, Chong Y. Multi-Level Capacitive Memory Effect in Metal/Oxide/Floating-Schottky Junction Journal of the Korean Physical Society. 74: 979-983. DOI: 10.3938/Jkps.74.979  0.372
2018 Jang J, Lee Y, Yoon JY, Yoon HH, Koo J, Choe J, Jeon S, Sung J, Park J, Lee WC, Lee H, Jeong HY, Park K, Kim K. 1D Assembly on 2D: AuCN Nanowire Epitaxy on Graphene for Hybrid Phototransistors. Nano Letters. PMID 30247914 DOI: 10.1021/Acs.Nanolett.8B02259  0.321
2018 Yu J, Lev B, Jin H, Park K, Chae D, Kim W, Kim J. Surface-induced transition of nematic liquid crystals on graphene/SiC substrate Epl. 124: 46004. DOI: 10.1209/0295-5075/124/46004  0.308
2018 Lee J, Seo J, Jung S, Park K, Park H. Unveiling the Direct Correlation between the CVD-Grown Graphene and the Growth Template Journal of Nanomaterials. 2018: 1-6. DOI: 10.1155/2018/7610409  0.304
2017 Jeon Y, Jung S, Jin H, Mo K, Kim KR, Park WK, Han ST, Park K. Highly-Sensitive Thin Film THz Detector Based on Edge Metal-Semiconductor-Metal Junction. Scientific Reports. 7: 16830. PMID 29203788 DOI: 10.1038/S41598-017-16923-Z  0.35
2017 Ullah F, Sim Y, Le CT, Seong MJ, Jang JI, Rhim SH, Tran Khac BC, Chung KH, Park K, Lee Y, Kim K, Jeong HY, Kim YS. Growth and Simultaneous Valley Manipulation of Two-Dimensional MoSe2-WSe2 Lateral Heterostructure. Acs Nano. PMID 28825796 DOI: 10.1021/Acsnano.7B02914  0.332
2017 Bae G, Choi J, Cho C, Lee J, Kwak J, Na H, Park K, Park K, Kwon S. Optical and microstructural properties of InGaN/GaN multiple quantum wells with embedded graphene coating Journal of Alloys and Compounds. 713: 87-94. DOI: 10.1016/J.Jallcom.2017.04.120  0.374
2017 Jin H, Lee J, Kim J, Jung S, Mo K, Park K. Formation of graphene on amorphous SiC film by surface-confined heating with electron beam irradiation Current Applied Physics. 18: 335-339. DOI: 10.1016/J.Cap.2017.12.013  0.357
2016 Yoon HH, Jung S, Choi G, Kim J, Jeon Y, Kim YS, Jeong HY, Kim K, Kwon SY, Park K. Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer. Nano Letters. PMID 27960259 DOI: 10.1021/Acs.Nanolett.6B03137  0.384
2016 Jung S, Jeon Y, Jin H, Lee JY, Ko JH, Kim N, Eom D, Park K. Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields. Scientific Reports. 6: 30646. PMID 27476475 DOI: 10.1038/Srep30646  0.313
2016 Ryu MW, Lee JS, Kim KS, Park K, Yang JR, Han ST, Kim KR. High-Performance Plasmonic THz Detector Based on Asymmetric FET With Vertically Integrated Antenna in CMOS Technology Ieee Transactions On Electron Devices. DOI: 10.1109/Ted.2016.2526677  0.304
2015 Jin HB, Jeon Y, Jung S, Modepalli V, Kang HS, Lee BC, Ko JH, Shin HJ, Yoo JW, Kim SY, Kwon SY, Eom D, Park K. Enhanced crystallinity of epitaxial graphene grown on hexagonal SiC surface with molybdenum plate capping. Scientific Reports. 5: 9615. PMID 25905989 DOI: 10.1038/Srep09615  0.359
2015 Choi JK, Kwak J, Park SD, Yun HD, Kim SY, Jung M, Kim SY, Park K, Kang S, Kim SD, Park DY, Lee DS, Hong SK, Shin HJ, Kwon SY. Growth of wrinkle-free graphene on texture-controlled platinum films and thermal-assisted transfer of large-scale patterned graphene. Acs Nano. 9: 679-86. PMID 25494828 DOI: 10.1021/Nn5060909  0.311
2015 Jeon Y, Jin HB, Jung S, Go H, Lee I, Lee C, Joo YK, Park K. Highly flexible touch screen panel fabricated with silver nanowire crossing electrodes and transparent bridges Journal of the Optical Society of Korea. 19: 508-513. DOI: 10.3807/Josk.2015.19.5.508  0.312
2015 Choi G, Yoon HH, Jung S, Jeon Y, Lee JY, Bahng W, Park K. Schottky barrier modulation of metal/4H-SiC junction with thin interface spacer driven by surface polarization charge on 4H-SiC substrate Applied Physics Letters. 107. DOI: 10.1063/1.4938070  0.387
2014 Ryu MW, Lee JS, Park K, Park W, Han S, Kim KR. Photoresponse enhancement of plasmonic terahertz wave detector based on asymmetric silicon MOSFETs with antenna integration Japanese Journal of Applied Physics. 53. DOI: 10.7567/Jjap.53.04Ej05  0.319
2012 Choi JK, Huh JH, Kim SD, Moon D, Yoon D, Joo K, Kwak J, Chu JH, Kim SY, Park K, Kim YW, Yoon E, Cheong H, Kwon SY. One-step graphene coating of heteroepitaxial GaN films. Nanotechnology. 23: 435603. PMID 23059535 DOI: 10.1088/0957-4484/23/43/435603  0.357
2012 Chu JH, Kwak J, Kwon TY, Park SD, Go H, Kim SY, Park K, Kang S, Kwon SY. Facile synthesis of few-layer graphene with a controllable thickness using rapid thermal annealing. Acs Applied Materials & Interfaces. 4: 1777-82. PMID 22397526 DOI: 10.1021/Am3000177  0.319
2012 Kwak J, Chu JH, Choi JK, Park SD, Go H, Kim SY, Park K, Kim SD, Kim YW, Yoon E, Kodambaka S, Kwon SY. Near room-temperature synthesis of transfer-free graphene films. Nature Communications. 3: 645. PMID 22273683 DOI: 10.1038/Ncomms1650  0.333
2012 Hwang HC, Park K, Park W, Han S, Kim KR. Design and Characterization of Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors Japanese Journal of Applied Physics. 51. DOI: 10.1143/Jjap.51.06Fe17  0.331
2012 Go H, Kwak J, Jeon Y, Kim S, Cheol Lee B, Suk Kang H, Ko J, Kim N, Kim B, Yoo J, Youb Kim S, Kim Y, Kwon S, Park K. Low-temperature formation of epitaxial graphene on 6H-SiC induced by continuous electron beam irradiation Applied Physics Letters. 101: 092105. DOI: 10.1063/1.4748592  0.357
2011 Park K, Seok Go H, Jeon Y, Pelz JP, Zhang X, Skowronski M. Dependence of spontaneous polarization on stacking sequence in SiC revealed by local Schottky barrier height variations over a partially formed 8H-SiC layer on a 4H-SiC substrate Applied Physics Letters. 99: 252102. DOI: 10.1063/1.3670329  0.638
2009 Cai W, Park K, Pelz JP. Nanometer-resolution measurement and modeling of lateral variations of the effective work function at the bilayerPt/Al/SiO2interface Physical Review B. 80. DOI: 10.1103/Physrevb.80.165322  0.637
2006 Park K, Ding Y, Pelz JP, Neudeck PG, Trunek AJ. Valence band structure and band offset of 3C- and 4H-SiC studied by ballistic hole emission microscopy Applied Physics Letters. 89: 042103. DOI: 10.1063/1.2218302  0.598
2005 Park K, Pelz JP, Grim J, Skowronski M. Quantum well behavior of single stacking fault 3C inclusions in 4H-SiC p-i-n diodes studied by ballistic electron emission microscopy Applied Physics Letters. 87: 232103. DOI: 10.1063/1.2138442  0.658
2005 Tivarus C, Park KB, Hudait MK, Ringel SA, Pelz JP. Nanoscale characterization of metal/semiconductor nanocontacts Aip Conference Proceedings. 788: 280-284. DOI: 10.1063/1.2062977  0.659
2005 Park K, Ding Y, Pelz JP, Mikhov MK, Wang Y, Skromme BJ. Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts: Cubic inclusions in hexagonal SiC Applied Physics Letters. 86: 222109. DOI: 10.1063/1.1935757  0.629
2004 Ding Y, Park KB, Pelz JP, Los AV, Mazzola MS. Ballistic electron emission microscopy study of p-type 4H-SiC Materials Science Forum. 457: 1077-1080. DOI: 10.4028/Www.Scientific.Net/Msf.457-460.1077  0.303
2004 Ding Y, Park K, Pelz JP, Palle KC, Mikhov MK, Skromme BJ, Meidia H, Mahajan S. Cubic inclusions in 4H-SiC studied with ballistic electron-emission microscopy Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 22: 1351-1355. DOI: 10.1116/1.1705644  0.654
2004 Ding Y, Park K, Pelz JP, Palle KC, Mikhov MK, Skromme BJ, Meidia H, Mahajan S. Quantum well state of self-forming3C−SiCinclusions in4HSiC determined by ballistic electron emission microscopy Physical Review B. 69. DOI: 10.1103/Physrevb.69.041305  0.67
2003 Ebner C, Park K, Nielsen J, Pelz JP. Simulations of denuded-zone formation during growth on surfaces with anisotropic diffusion Physical Review B. 68. DOI: 10.1103/Physrevb.68.245404  0.584
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