Year |
Citation |
Score |
2012 |
Gray AX, Minár J, Ueda S, Stone PR, Yamashita Y, Fujii J, Braun J, Plucinski L, Schneider CM, Panaccione G, Ebert H, Dubon OD, Kobayashi K, Fadley CS. Bulk electronic structure of the dilute magnetic semiconductor Ga(1-x)Mn(x)As through hard X-ray angle-resolved photoemission. Nature Materials. 11: 957-62. PMID 23064495 DOI: 10.1038/Nmat3450 |
0.665 |
|
2011 |
Guzman J, Boswell-Koller CN, Beeman JW, Bustillo KC, Conry T, Dubón OD, Hansen WL, Levander AX, Liao CY, Lieten RR, Sawyer CA, Sherburne MP, Shin SJ, Stone PR, Watanabe M, et al. Reversible phase changes in Ge-Au nanoparticles Applied Physics Letters. 98. DOI: 10.1063/1.3584850 |
0.731 |
|
2011 |
Buchowicz G, Stone PR, Robinson JT, Cress CD, Beeman JW, Dubon OD. Correlation between structure and electrical transport in ion-irradiated graphene grown on Cu foils Applied Physics Letters. 98. DOI: 10.1063/1.3536529 |
0.686 |
|
2011 |
Winkler TE, Stone PR, Li T, Yu KM, Bonanni A, Dubon OD. Compensation-dependence of magnetic and electrical properties in Ga1- x Mnx P Applied Physics Letters. 98. DOI: 10.1063/1.3535957 |
0.677 |
|
2010 |
Shin SJ, Guzman J, Yuan CW, Liao CY, Boswell-Koller CN, Stone PR, Dubon OD, Minor AM, Watanabe M, Beeman JW, Yu KM, Ager JW, Chrzan DC, Haller EE. Embedded binary eutectic alloy nanostructures: a new class of phase change materials. Nano Letters. 10: 2794-8. PMID 20698591 DOI: 10.1021/Nl100670R |
0.613 |
|
2010 |
Stone PR, Dreher L, Beeman JW, Yu KM, Brandt MS, Dubon OD. Interplay of epitaxial strain and perpendicular magnetic anisotropy in insulating ferromagnetic Ga1-xc Mnx P1-y N y Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.205210 |
0.7 |
|
2010 |
Mayer MA, Stone PR, Miller N, Smith HM, Dubon OD, Haller EE, Yu KM, Walukiewicz W, Liu X, Furdyna JK. Electronic structure of Ga1-x Mnx As analyzed according to hole-concentration-dependent measurements Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.045205 |
0.7 |
|
2010 |
Tanaka T, Yu KM, Stone PR, Beeman JW, Dubon OD, Reichertz LA, Kao VM, Nishio M, Walukiewicz W. Demonstration of homojunction ZnTe solar cells Journal of Applied Physics. 108. DOI: 10.1063/1.3463421 |
0.531 |
|
2009 |
Shin SJ, Guzman J, Yuan CW, Liao CY, Stone PR, Dubon OD, Minor AM, Watanabe M, Ager JW, Chrzan DC, Haller EE. Structural characterization of GeSn alloy nanocrystals embedded in SiO 2 Materials Research Society Symposium Proceedings. 1184: 157-161. DOI: 10.1557/Proc-1184-Hh04-08 |
0.642 |
|
2009 |
Guzman J, Shin SJ, Liao CY, Yuan CW, Stone PR, Dubón OD, Yu KM, Beeman JW, Watanabe M, Ager JW, Chrzan DC, Haller EE. Photoluminescence enhancement of Er-doped silica containing Ge nanoclusters Applied Physics Letters. 95. DOI: 10.1063/1.3266846 |
0.646 |
|
2009 |
Ahlers S, Stone PR, Sircar N, Arenholz E, Dubon OD, Bougeard D. Comparison of the magnetic properties of GeMn thin films through Mn L -edge x-ray absorption Applied Physics Letters. 95. DOI: 10.1063/1.3232245 |
0.656 |
|
2008 |
Stone PR, Alberi K, Tardif SK, Beeman JW, Yu KM, Walukiewicz W, Dubon OD. Metal-insulator transition by isovalent anion substitution in Ga1-xMnxAs: implications to ferromagnetism. Physical Review Letters. 101: 087203. PMID 18764655 DOI: 10.1103/Physrevlett.101.087203 |
0.753 |
|
2008 |
Stone PR, Bihler C, Kraus M, Scarpulla MA, Beeman JW, Yu KM, Brandt MS, Dubon OD. Compensation-dependent in-plane magnetization reversal processes in Ga 1-xMnxP1-ySy Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.214421 |
0.743 |
|
2008 |
Alberi K, Yu KM, Stone PR, Dubon OD, Walukiewicz W, Wojtowicz T, Liu X, Furdyna JK. Publisher's Note: Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing (Physical Review B - Condensed Matter and Materials Physics (2008) 78, (075201)) Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.159904 |
0.721 |
|
2008 |
Alberi K, Yu KM, Stone PR, Dubon OD, Walukiewicz W, Wojtowicz T, Liu X, Furdyna JK. Formation of Mn-derived impurity band in III-Mn-V alloys by valence band anticrossing Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.075201 |
0.648 |
|
2008 |
Yuan CW, Shin SJ, Liao CY, Guzman J, Stone PR, Watanabe M, Ager JW, Haller EE, Chrzan DC. Structure map for embedded binary alloy nanocrystals Applied Physics Letters. 93. DOI: 10.1063/1.3027066 |
0.451 |
|
2008 |
Scarpulla MA, Stone PR, Sharp ID, Haller EE, Dubon OD, Beeman JW, Yu KM. Nonmagnetic compensation in ferromagnetic Ga1-x Mnx As and Ga1-xMnx P synthesized by ion implantation and pulsed-laser melting Journal of Applied Physics. 103. DOI: 10.1063/1.2940361 |
0.774 |
|
2008 |
Scarpulla MA, Farshchi R, Stone PR, Chopdekar RV, Yu KM, Suzuki Y, Dubon OD. Electrical transport and ferromagnetism in Ga1-x Mnx As synthesized by ion implantation and pulsed-laser melting Journal of Applied Physics. 103. DOI: 10.1063/1.2890411 |
0.763 |
|
2007 |
Bihler C, Kraus M, Huebl H, Brandt MS, Goennenwein STB, Opel M, Scarpulla MA, Stone PR, Farshchi R, Dubon OD. Magnetocrystalline anisotropy and magnetization reversal in Ga1-x Mnx P synthesized by ion implantation and pulsed-laser melting Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.214419 |
0.777 |
|
2007 |
Stone PR, Beeman JW, Yu KM, Dubon OD. Tuning of ferromagnetism through anion substitution in Ga-Mn-pnictide ferromagnetic semiconductors Physica B: Condensed Matter. 401: 454-457. DOI: 10.1016/J.Physb.2007.08.210 |
0.682 |
|
2006 |
Stone PR, Scarpulla MA, Farshchi R, Sharp ID, Haller EE, Dubon OD, Yu KM, Beeman JW, Arenholz E, Denlinger JD, Ohldag H. Mn L 3,2 x-ray absorption and magnetic circular dichroism in ferromagnetic Ga 1-xMn xP Applied Physics Letters. 89. DOI: 10.1063/1.2219713 |
0.771 |
|
2006 |
Farshchi R, Scarpulla MA, Stone PR, Yu KM, Sharp ID, Beeman JW, Silvestri HH, Reichertz LA, Haller EE, Dubon OD. Compositional tuning of ferromagnetism in Ga1-xMnxP Solid State Communications. 140: 443-446. DOI: 10.1016/J.Ssc.2006.09.010 |
0.776 |
|
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