| Year |
Citation |
Score |
| 2022 |
Zhou Y, Lv D, Bi D, Wu L, Wang R, Ma S, Zhang EX, Fleetwood DM, Wu A. Radiation-hardened silicon photonic passive devices on a 3 µm waveguide platform under gamma and proton irradiation. Optics Express. 30: 16921-16930. PMID 36221525 DOI: 10.1364/OE.453903 |
0.35 |
|
| 2022 |
Zhou Y, Bi D, Wang S, Wu L, Huang Y, Zhang E, Fleetwood DM, Wu A. High energy irradiation effects on silicon photonic passive devices. Optics Express. 30: 4017-4027. PMID 35209648 DOI: 10.1364/OE.447160 |
0.356 |
|
| 2020 |
Bonaldo S, Mattiazzo S, Enz C, Baschirotto A, Fleetwood DM, Paccagnella A, Gerardin S. Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh Doses Ieee Transactions On Nuclear Science. 67: 1302-1311. DOI: 10.1109/Tns.2020.2981881 |
0.526 |
|
| 2020 |
Fleetwood DM. Total-Ionizing-Dose Effects, Border Traps, and 1/ f Noise in Emerging MOS Technologies Ieee Transactions On Nuclear Science. 67: 1216-1240. DOI: 10.1109/Tns.2020.2971861 |
0.506 |
|
| 2020 |
Gorchichko M, Cao Y, Zhang EX, Yan D, Gong H, Zhao SE, Wang P, Jiang R, Liang C, Fleetwood DM, Schrimpf RD, Reed RA, Linten D. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO2/HfO2 Gate Dielectrics Ieee Transactions On Nuclear Science. 67: 245-252. DOI: 10.1109/Tns.2019.2960815 |
0.472 |
|
| 2020 |
Bonaldo S, Putcha V, Linten D, Pantelides ST, Reed RA, Schrimpf RD, Fleetwood DM, Zhao SE, O'Hara A, Gorchichko M, Zhang EX, Gerardin S, Paccagnella A, Waldron N, Collaert N. Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics Ieee Transactions On Nuclear Science. 67: 210-220. DOI: 10.1109/Tns.2019.2957028 |
0.509 |
|
| 2020 |
Chen L, Jin N, Yan D, Cao Y, Zhao L, Liang H, Liu B, Zhang EX, Gu X, Schrimpf RD, Fleetwood DM, Lu H. Charge Transport in Vertical GaN Schottky Barrier Diodes: A Refined Physical Model for Conductive Dislocations Ieee Transactions On Electron Devices. 67: 841-846. DOI: 10.1109/Ted.2020.2965953 |
0.36 |
|
| 2020 |
Wang PF, Li X, Zhang EX, Jiang R, McCurdy MW, Poling BS, Heller ER, Schrimpf RD, Fleetwood DM. Worst-Case Bias for High Voltage, Elevated-Temperature Stress of AlGaN/GaN HEMTs Ieee Transactions On Device and Materials Reliability. 20: 420-428. DOI: 10.1109/Tdmr.2020.2986401 |
0.422 |
|
| 2020 |
Toguchi S, Zhang EX, Gorchichko M, Fleetwood DM, Schrimpf RD, Reed RA, Moreau S, Cheramy S, Batude P, Brunet L, Andrieu F, Alles ML. Total-Ionizing-Dose Effects on 3D Sequentially Integrated, Fully Depleted Silicon-on-Insulator MOSFETs Ieee Electron Device Letters. 41: 637-640. DOI: 10.1109/Led.2020.2972439 |
0.47 |
|
| 2020 |
Ge H, Zhang EX, Chen J, Xu L, Wang S, Chai Z, Wang P, Fleetwood DM. Comparing the TID-induced RF performance degradation of floating body and body contacted 130 nm SOI NMOS transistors Microelectronics Reliability. 104: 113547. DOI: 10.1016/J.Microrel.2019.113547 |
0.404 |
|
| 2019 |
Geremew AK, Kargar F, Zhang EX, Zhao SE, Aytan E, Bloodgood MA, Salguero TT, Rumyantsev S, Fedoseyev A, Fleetwood DM, Balandin AA. Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices. Nanoscale. 11: 8380-8386. PMID 30984944 DOI: 10.1039/C9Nr01614G |
0.326 |
|
| 2019 |
Warren WL, Fleetwood DM, Shaneyfelt MR, Winokur PS, Devine RA. Defect-defect hole transfer and the identity of border traps in SiO2 films. Physical Review. B, Condensed Matter. 50: 14710-14713. PMID 9975716 DOI: 10.1103/Physrevb.50.14710 |
0.336 |
|
| 2019 |
Fleetwood D, Brown D, Quinn H, Esqueda IS, Robinson W, Moss S, Goiffon V, Paillet P. Comments by the Editors Ieee Transactions On Nuclear Science. 55: 1437-1437. DOI: 10.1109/Tns.2019.2920540 |
0.318 |
|
| 2019 |
Haeffner TD, Reed RA, Schrimpf RD, Fleetwood DM, Keller RF, Jiang R, Sierawski BD, Mccurdy MW, Zhang EX, Mohammed RW, Ball DR, Alles ML. Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K Ieee Transactions On Nuclear Science. 66: 911-917. DOI: 10.1109/Tns.2019.2909720 |
0.435 |
|
| 2019 |
Witczak SC, Messenger SR, Fleetwood DM, Schrimpf RD, Langlois MS, Codie Mishler M, Adams DA. Damage Separation in a Bipolar Junction Transistor Following Irradiation With 250-MeV Protons Ieee Transactions On Nuclear Science. 66: 795-800. DOI: 10.1109/Tns.2019.2904911 |
0.471 |
|
| 2019 |
Bonaldo S, Gerardin S, Jin X, Paccagnella A, Faccio F, Borghello G, Fleetwood DM. Charge Buildup and Spatial Distribution of Interface Traps in 65-nm pMOSFETs Irradiated to Ultrahigh Doses Ieee Transactions On Nuclear Science. 66: 1574-1583. DOI: 10.1109/Tns.2019.2903020 |
0.493 |
|
| 2019 |
Zhao SE, Bonaldo S, Wang P, Jiang R, Gong H, Zhang EX, Waldron N, Kunert B, Mitard J, Collaert N, Sioncke S, Linten D, Schrimpf RD, Reed RA, Gerardin S, ... ... Fleetwood DM, et al. Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si Ieee Transactions On Nuclear Science. 66: 1599-1605. DOI: 10.1109/TNS.2019.2890827 |
0.323 |
|
| 2019 |
Wang P, Kalita H, Krishnaprasad A, Dev D, O'Hara A, Jiang R, Zhang E, Fleetwood DM, Schrimpf RD, Pantelides ST, Roy T. Total-Ionizing-Dose Response of MoS2 Transistors With ZrO2 and h-BN Gate Dielectrics Ieee Transactions On Nuclear Science. 66: 1584-1591. DOI: 10.1109/Tns.2018.2885751 |
0.52 |
|
| 2019 |
Goley PS, Tzintzarov GN, Zeinolabedinzadeh S, Ildefonso A, Motoki K, Jiang R, Zhang EX, Fleetwood DM, Zimmermann L, Kaynak M, Lischke S, Mai C, Cressler JD. Total Ionizing Dose Effects in 70-GHz Bandwidth Photodiodes in a SiGe Integrated Photonics Platform Ieee Transactions On Nuclear Science. 66: 125-133. DOI: 10.1109/Tns.2018.2885327 |
0.355 |
|
| 2019 |
Gong H, Ni K, Zhang EX, Sternberg AL, Kozub JA, Alles ML, Reed RA, Fleetwood DM, Schrimpf RD, Waldron N, Kunert B, Linten D. Pulsed-Laser Induced Single-Event Transients in InGaAs FinFETs on Bulk Silicon Substrates Ieee Transactions On Nuclear Science. 66: 376-383. DOI: 10.1109/Tns.2018.2880982 |
0.428 |
|
| 2019 |
Wang P, Perini CJ, O'Hara A, Gong H, Wang P, Zhang EX, Mccurdy MW, Fleetwood DM, Schrimpf RD, Pantelides ST, Vogel EM. Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS 2 -Interlayer-MoS 2 Tunneling Junctions Ieee Transactions On Nuclear Science. 66: 420-427. DOI: 10.1109/Tns.2018.2879632 |
0.493 |
|
| 2019 |
Li X, Lu W, Guo Q, Fleetwood DM, He C, Wang X, Yu X, Sun J, Liu M, Yao S. Temperature-Switching During Irradiation as a Test for ELDRS in Linear Bipolar Devices Ieee Transactions On Nuclear Science. 66: 199-206. DOI: 10.1109/Tns.2018.2879383 |
0.444 |
|
| 2019 |
Arutt CN, Shuvra PD, Lin J, Alles ML, Alphenaar BW, Davidson JL, Walsh KM, Mcnamara S, Fleetwood DM, Schrimpf RD. Dopant-Type and Concentration Dependence of Total-Ionizing-Dose Response in Piezoresistive Micromachined Cantilevers Ieee Transactions On Nuclear Science. 66: 397-404. DOI: 10.1109/Tns.2018.2879077 |
0.427 |
|
| 2019 |
Liang C, Ma R, Li K, Su Y, Gong H, Ryder KL, Wang P, Sternberg AL, Zhang EX, Alles ML, Reed RA, Koester SJ, Fleetwood DM, Schrimpf RD. Laser-Induced Single-Event Transients in Black Phosphorus MOSFETs Ieee Transactions On Nuclear Science. 66: 384-388. DOI: 10.1109/Tns.2018.2877412 |
0.333 |
|
| 2019 |
Jiang R, Zhang EX, McCurdy MW, Wang P, Gong H, Yan D, Schrimpf RD, Fleetwood DM. Dose-Rate Dependence of the Total-Ionizing-Dose Response of GaN-Based HEMTs Ieee Transactions On Nuclear Science. 66: 170-176. DOI: 10.1109/Tns.2018.2873059 |
0.462 |
|
| 2018 |
Liao W, Zhang EX, Alles ML, Sternberg AL, Arutt CN, Wang D, Zhao SE, Wang P, McCurdy MW, Xie H, Fleetwood DM, Reed RA, Schrimpf RD. Total-Ionizing-Dose Effects on Al/SiO2 Bimorph Electrothermal Microscanners Ieee Transactions On Nuclear Science. 65: 2260-2267. DOI: 10.1109/Tns.2018.2853139 |
0.456 |
|
| 2018 |
Li X, Yang J, Fleetwood DM, Liu C, Wei Y, Barnaby HJ, Galloway KF. Hydrogen Soaking, Displacement Damage Effects, and Charge Yield in Gated Lateral Bipolar Junction Transistors Ieee Transactions On Nuclear Science. 65: 1271-1276. DOI: 10.1109/Tns.2018.2837032 |
0.462 |
|
| 2018 |
Borghello G, Faccio F, Lerario E, Michelis S, Kulis S, Fleetwood DM, Schrimpf RD, Gerardin S, Paccagnella A, Bonaldo S. Dose-Rate Sensitivity of 65-nm MOSFETs Exposed to Ultrahigh Doses Ieee Transactions On Nuclear Science. 65: 1482-1487. DOI: 10.1109/Tns.2018.2828142 |
0.479 |
|
| 2018 |
Liang CD, Ma R, Su Y, O'Hara A, Zhang EX, Alles ML, Wang P, Zhao SE, Pantelides ST, Koester SJ, Schrimpf RD, Fleetwood DM. Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics Ieee Transactions On Nuclear Science. 65: 1227-1238. DOI: 10.1109/Tns.2018.2828080 |
0.479 |
|
| 2018 |
Wang PF, Zhang EX, Chuang KH, Liao W, Gong H, Wang P, Arutt CN, Ni K, Mccurdy MW, Verbauwhede I, Bury E, Linten D, Fleetwood DM, Schrimpf RD, Reed RA. X-Ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices Ieee Transactions On Nuclear Science. 65: 1519-1524. DOI: 10.1109/Tns.2017.2789160 |
0.478 |
|
| 2018 |
Fleetwood DM. Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling Ieee Transactions On Nuclear Science. 65: 1465-1481. DOI: 10.1109/Tns.2017.2786140 |
0.504 |
|
| 2018 |
Gong H, Ni K, Zhang EX, Sternberg AL, Kozub JA, Ryder KL, Keller RF, Ryder LD, Weiss SM, Weller RA, Alles ML, Reed RA, Fleetwood DM, Schrimpf RD, Vardi A, et al. Scaling Effects on Single-Event Transients in InGaAs FinFETs Ieee Transactions On Nuclear Science. 65: 296-303. DOI: 10.1109/Tns.2017.2778640 |
0.428 |
|
| 2018 |
Deng N, Liao W, Hu J, Wang P, Xu M, Zhang H, Wang P, Liang C, Tian H, Chen L, Ouyang X, Yang Y, Ren T, Zhang EX, Fleetwood DM. Total-Ionizing-Dose Effects on a Graphene X-Ray Detector Laser-Scribed From Graphene Oxide Ieee Transactions On Nuclear Science. 65: 473-477. DOI: 10.1109/Tns.2017.2776201 |
0.338 |
|
| 2018 |
Bhuiyan MA, Zhou H, Chang S, Lou X, Gong X, Jiang R, Gong H, Zhang EX, Won C, Lim J, Lee J, Gordon RG, Reed RA, Fleetwood DM, Ye P, et al. Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric Ieee Transactions On Nuclear Science. 65: 46-52. DOI: 10.1109/Tns.2017.2774928 |
0.527 |
|
| 2018 |
Tonigan AM, Arutt CN, Parma EJ, Griffin PJ, Fleetwood DM, Schrimpf RD. Correlation of a Bipolar-Transistor-Based Neutron Displacement Damage Sensor Methodology With Proton Irradiations Ieee Transactions On Nuclear Science. 65: 495-501. DOI: 10.1109/Tns.2017.2774759 |
0.369 |
|
| 2018 |
Jiang R, Zhang EX, Zhao SE, Fleetwood DM, Schrimpf RD, Reed RA, Alles ML, Shank JC, Tellekamp MB, Doolittle WA. Total-Ionizing-Dose Response of Nb2O5-Based MIM Diodes for Neuromorphic Computing Applications Ieee Transactions On Nuclear Science. 65: 78-83. DOI: 10.1109/Tns.2017.2761904 |
0.474 |
|
| 2018 |
Wang P, Perini C, O'Hara A, Tuttle BR, Zhang EX, Gong H, Liang C, Jiang R, Liao W, Fleetwood DM, Schrimpf RD, Vogel EM, Pantelides ST. Radiation-Induced Charge Trapping and Low-Frequency Noise of Graphene Transistors Ieee Transactions On Nuclear Science. 65: 156-163. DOI: 10.1109/Tns.2017.2761747 |
0.452 |
|
| 2018 |
Zhao SE, Jiang R, Zhang EX, Liao W, Liang C, Fleetwood DM, Schrimpf RD, Reed RA, Linten D, Mitard J, Collaert N, Sioncke S, Waldron N. Capacitance–Frequency Estimates of Border-Trap Densities in Multifin MOS Capacitors Ieee Transactions On Nuclear Science. 65: 175-183. DOI: 10.1109/Tns.2017.2761298 |
0.383 |
|
| 2018 |
Faccio F, Borghello G, Lerario E, Fleetwood DM, Schrimpf RD, Gong H, Zhang EX, Wang P, Michelis S, Gerardin S, Paccagnella A, Bonaldo S. Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses Ieee Transactions On Nuclear Science. 65: 164-174. DOI: 10.1109/Tns.2017.2760629 |
0.532 |
|
| 2018 |
Arutt CN, Liao W, Gong H, Shuvra PD, Lin J, Alles ML, Alphenaar BW, Davidson JL, Walsh KM, McNamara S, Zhang EX, Sternberg AL, Fleetwood DM, Reed RA, Schrimpf RD. Dose-Rate Effects on the Total-Ionizing-Dose Response of Piezoresistive Micromachined Cantilevers Ieee Transactions On Nuclear Science. 65: 58-63. DOI: 10.1109/Tns.2017.2760242 |
0.432 |
|
| 2018 |
Gong H, Liao W, Zhang EX, Sternberg AL, McCurdy MW, Davidson JL, Reed RA, Fleetwood DM, Schrimpf RD, Shuvra PD, Lin J, McNamara S, Walsh KM, Alphenaar BW, Alles ML. Proton-Induced Displacement Damage and Total-Ionizing-Dose Effects on Silicon-Based MEMS Resonators Ieee Transactions On Nuclear Science. 65: 34-38. DOI: 10.1109/Tns.2017.2749180 |
0.397 |
|
| 2018 |
Jiang R, Shen X, Fang J, Wang P, Zhang EX, Chen J, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle EC, Speck JS, Pantelides ST. Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs Ieee Transactions On Device and Materials Reliability. 18: 364-376. DOI: 10.1109/Tdmr.2018.2847338 |
0.424 |
|
| 2018 |
Bhuiyan MA, Zhou H, Jiang R, Zhang EX, Fleetwood DM, Ye PD, Ma T. Charge Trapping in Al2O3/$\beta$ -Ga2O3-Based MOS Capacitors Ieee Electron Device Letters. 39: 1022-1025. DOI: 10.1109/Led.2018.2841899 |
0.491 |
|
| 2018 |
Zhao L, Yan D, Zhang Z, Hua B, Yang G, Cao Y, Zhang EX, Gu X, Fleetwood DM. Temperature-Dependent Efficiency Droop in GaN-Based Blue LEDs Ieee Electron Device Letters. 39: 528-531. DOI: 10.1109/Led.2018.2805192 |
0.332 |
|
| 2018 |
Yang J, Li X, Liu C, Fleetwood DM. The effect of ionization and displacement damage on minority carrier lifetime Microelectronics Reliability. 82: 124-129. DOI: 10.1016/J.Microrel.2018.01.012 |
0.502 |
|
| 2018 |
Fleetwood DM. Border traps and bias-temperature instabilities in MOS devices Microelectronics Reliability. 80: 266-277. DOI: 10.1016/J.Microrel.2017.11.007 |
0.51 |
|
| 2017 |
Xu L, Luo J, Chen J, Chai Z, He W, Zhang EX, Fleetwood DM. Improved Single-Event Transient Hardness in Tunnel-Diode Body-Contact SOI nMOS Ieee Transactions On Nuclear Science. 64: 2669-2672. DOI: 10.1109/Tns.2017.2749642 |
0.362 |
|
| 2017 |
Chen RM, Mahatme NN, Diggins ZJ, Wang L, Zhang EX, Chen YP, Liu YN, Narasimham B, Witulski AF, Bhuva BL, Fleetwood DM. Impact of Temporal Masking of Flip-Flop Upsets on Soft Error Rates of Sequential Circuits Ieee Transactions On Nuclear Science. 64: 2098-2106. DOI: 10.1109/Tns.2017.2711034 |
0.312 |
|
| 2017 |
Li X, Yang J, Barnaby HJ, Galloway KF, Schrimpf RD, Fleetwood DM, Liu C. Dependence of Ideality Factor in Lateral PNP Transistors on Surface Carrier Concentration Ieee Transactions On Nuclear Science. 64: 1549-1553. DOI: 10.1109/Tns.2017.2703310 |
0.405 |
|
| 2017 |
Ni K, Sternberg AL, Zhang EX, Kozub JA, Jiang R, Schrimpf RD, Reed RA, Fleetwood DM, Alles ML, McMorrow D, Lin J, Vardi A, del Alamo J. Understanding Charge Collection Mechanisms in InGaAs FinFETs Using High-Speed Pulsed-Laser Transient Testing With Tunable Wavelength Ieee Transactions On Nuclear Science. 64: 2069-2078. DOI: 10.1109/Tns.2017.2699482 |
0.397 |
|
| 2017 |
Chen RM, Diggins ZJ, Mahatme NN, Wang L, Zhang EX, Chen YP, Zhang H, Liu YN, Narasimham B, Witulski AF, Bhuva BL, Fleetwood DM. Effects of Temperature and Supply Voltage on SEU- and SET-Induced Errors in Bulk 40-nm Sequential Circuits Ieee Transactions On Nuclear Science. 64: 2122-2128. DOI: 10.1109/Tns.2017.2647749 |
0.323 |
|
| 2017 |
Loveless TD, Jagannathan S, Zhang EX, Fleetwood DM, Kauppila JS, Haeffner TD, Massengill LW. Combined Effects of Total Ionizing Dose and Temperature on a K-Band Quadrature LC-Tank VCO in a 32 nm CMOS SOI Technology Ieee Transactions On Nuclear Science. 64: 204-211. DOI: 10.1109/Tns.2016.2637699 |
0.31 |
|
| 2017 |
Wang P, Jiang R, Chen J, Zhang EX, McCurdy MW, Schrimpf RD, Fleetwood DM. 1/ $f$ Noise in As-Processed and Proton-Irradiated AlGaN/GaN HEMTs Due to Carrier Number Fluctuations Ieee Transactions On Nuclear Science. 64: 181-189. DOI: 10.1109/Tns.2016.2636123 |
0.399 |
|
| 2017 |
Zhang EX, Fleetwood DM, Hachtel JA, Liang C, Reed RA, Alles ML, Schrimpf RD, Linten D, Mitard J, Chisholm MF, Pantelides ST. Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si Ieee Transactions On Nuclear Science. 64: 226-232. DOI: 10.1109/Tns.2016.2635023 |
0.425 |
|
| 2017 |
Sierawski BD, Warren KM, Sternberg AL, Austin RA, Trippe JM, McCurdy MW, Reed RA, Weller RA, Alles ML, Schrimpf RD, Massengill LW, Fleetwood DM, Monteiro A, Buxton GW, Brandenburg JC, et al. CubeSats and Crowd-Sourced Monitoring for Single Event Effects Hardness Assurance Ieee Transactions On Nuclear Science. 64: 293-300. DOI: 10.1109/Tns.2016.2632440 |
0.331 |
|
| 2017 |
Liao W, Zhang EX, Alles ML, Zhang CX, Gong H, Ni K, Sternberg AL, Xie H, Fleetwood DM, Reed RA, Schrimpf RD. Total-Ionizing-Dose Effects on Piezoelectric Micromachined Ultrasonic Transducers Ieee Transactions On Nuclear Science. 64: 233-238. DOI: 10.1109/Tns.2016.2631470 |
0.431 |
|
| 2017 |
Gong H, Liao W, Zhang EX, Sternberg AL, McCurdy MW, Davidson JL, Reed RA, Fleetwood DM, Schrimpf RD, Shuvra PD, Lin J, McNamara S, Walsh KM, Alphenaar BW, Alles ML. Total-Ionizing-Dose Effects in Piezoresistive Micromachined Cantilevers Ieee Transactions On Nuclear Science. 64: 263-268. DOI: 10.1109/Tns.2016.2631458 |
0.43 |
|
| 2017 |
Jiang R, Zhang EX, McCurdy MW, Chen J, Shen X, Wang P, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle ECH, Speck JS, Pantelides ST. Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs Ieee Transactions On Nuclear Science. 64: 218-225. DOI: 10.1109/Tns.2016.2626962 |
0.454 |
|
| 2017 |
Ren S, Bhuiyan MA, Wu H, Jiang R, Ni K, Zhang EX, Reed RA, Fleetwood DM, Ye P, Ma TP. Total Ionizing Dose (TID) Effects in Ultra-Thin Body Ge-on-Insulator (GOI) Junctionless CMOSFETs With Recessed Source/Drain and Channel Ieee Transactions On Nuclear Science. 64: 176-180. DOI: 10.1109/Tns.2016.2624294 |
0.466 |
|
| 2017 |
Ni K, Zhang EX, Schrimpf RD, Fleetwood DM, Reed RA, Alles ML, Lin J, del Alamo JA. Gate Bias and Geometry Dependence of Total-Ionizing-Dose Effects in InGaAs Quantum-Well MOSFETs Ieee Transactions On Nuclear Science. 64: 239-244. DOI: 10.1109/Tns.2016.2623492 |
0.481 |
|
| 2017 |
Wan X, Baker OK, McCurdy MW, Zhang EX, Zafrani M, Wainwright SP, Xu J, Bo HL, Reed RA, Fleetwood DM, Ma TP. Low Energy Proton Irradiation Effects on Commercial Enhancement Mode GaN HEMTs Ieee Transactions On Nuclear Science. 64: 253-257. DOI: 10.1109/Tns.2016.2621065 |
0.443 |
|
| 2017 |
Ren S, Bhuiyan MA, Zhang J, Lou X, Si M, Gong X, Jiang R, Ni K, Wan X, Zhang EX, Gordon RG, Reed RA, Fleetwood DM, Ye P, Ma TP. Total Ionizing Dose (TID) Effects in GaAs MOSFETs With La-Based Epitaxial Gate Dielectrics Ieee Transactions On Nuclear Science. 64: 164-169. DOI: 10.1109/Tns.2016.2620993 |
0.502 |
|
| 2017 |
Omprakash AP, Fleetwood ZE, Raghunathan US, Ildefonso A, Cardoso AS, Lourenco NE, Babcock J, Mukhopadhyay R, Zhang EX, McMarr PJ, Fleetwood DM, Cressler JD. Total Ionizing Dose Effects on a High-Voltage (>30V) Complementary SiGe on SOI Technology Ieee Transactions On Nuclear Science. 64: 277-284. DOI: 10.1109/Tns.2016.2617201 |
0.459 |
|
| 2017 |
Liang C, Su Y, Zhang EX, Ni K, Alles ML, Schrimpf RD, Fleetwood DM, Koester SJ. Total Ionizing Dose Effects on HfO2-Passivated Black Phosphorus Transistors Ieee Transactions On Nuclear Science. 64: 170-175. DOI: 10.1109/Tns.2016.2616282 |
0.394 |
|
| 2017 |
Chen RM, Diggins ZJ, Mahatme NN, Wang L, Zhang EX, Chen YP, Liu YN, Narasimham B, Witulski AF, Bhuva BL, Fleetwood DM. Effects of Total-Ionizing-Dose Irradiation on SEU- and SET-Induced Soft Errors in Bulk 40-nm Sequential Circuits Ieee Transactions On Nuclear Science. 64: 471-476. DOI: 10.1109/Tns.2016.2614963 |
0.34 |
|
| 2017 |
Liu G, Zhang EX, Liang CD, Bloodgood MA, Salguero TT, Fleetwood DM, Balandin AA. Total-Ionizing-Dose Effects on Threshold Switching in $1{T}$ -TaS2 Charge Density Wave Devices Ieee Electron Device Letters. 38: 1724-1727. DOI: 10.1109/Led.2017.2763597 |
0.44 |
|
| 2017 |
Puzyrev YS, Shen X, Zhang CX, Hachtel J, Ni K, Choi BK, Zhang E-, Ovchinnikov O, Schrimpf RD, Fleetwood DM, Pantelides ST. Memristive devices from ZnO nanowire bundles and meshes Applied Physics Letters. 111: 153504. DOI: 10.1063/1.5008265 |
0.358 |
|
| 2016 |
Ni K, Eneman G, Simoen E, Mocuta A, Collaert N, Thean A, Schrimpf RD, Reed RA, Fleetwood DM. Electrical Effects of a Single Extended Defect in MOSFETs Ieee Transactions On Electron Devices. 63: 3069-3075. DOI: 10.1109/Ted.2016.2583434 |
0.396 |
|
| 2016 |
Mukherjee S, Puzyrev Y, Chen J, Fleetwood DM, Schrimpf RD, Pantelides ST. Hot-Carrier Degradation in GaN HEMTs Due to Substitutional Iron and Its Complexes Ieee Transactions On Electron Devices. 63: 1486-1494. DOI: 10.1109/Ted.2016.2532806 |
0.415 |
|
| 2016 |
Duan GX, Hachtel JA, Zhang EX, Zhang CX, Fleetwood DM, Schrimpf RD, Reed RA, Mitard J, Linten D, Witters L, Collaert N, Mocuta A, Thean AV, Chisholm MF, Pantelides ST. Effects of Negative-Bias-Temperature-Instability on Low-Frequency Noise in SiGe ${p}$ MOSFETs Ieee Transactions On Device and Materials Reliability. 16: 541-548. DOI: 10.1109/Tdmr.2016.2611533 |
0.381 |
|
| 2016 |
Chen J, Puzyrev YS, Zhang EX, Fleetwood DM, Schrimpf RD, Arehart AR, Ringel SA, Kaun SW, Kyle ECH, Speck JS, Saunier P, Lee C, Pantelides ST. High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs Ieee Transactions On Device and Materials Reliability. 16: 282-289. DOI: 10.1109/Tdmr.2016.2581178 |
0.425 |
|
| 2016 |
Jiang R, Shen X, Chen J, Duan GX, Zhang EX, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle ECH, Speck JS, Pantelides ST. Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 109. DOI: 10.1063/1.4958706 |
0.425 |
|
| 2016 |
Zhang Z, Cardwell D, Sasikumar A, Kyle ECH, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, Speck JS, Arehart AR, Ringel SA. Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures Journal of Applied Physics. 119. DOI: 10.1063/1.4948298 |
0.452 |
|
| 2016 |
Caudel D, McCurdy M, Fleetwood DM, Reed RA, Weller RA, Goodwin B, Rowe E, Buliga V, Groza M, Stassun K, Burger A. Radiation damage of strontium iodide crystals due to irradiation by 137Cs gamma rays: A novel approach to altering nonproportionality Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 835: 177-181. DOI: 10.1016/J.Nima.2016.08.041 |
0.37 |
|
| 2015 |
Schrimpf RD, Fleetwood DM, Pantelides ST, Puzyrev YS, Mukherjee S, Reed RA, Speck JS, Mishra UK. Physical Mechanisms Affecting the Reliability of GaN-based High Electron Mobility Transistors Mrs Proceedings. 1792. DOI: 10.1557/Opl.2015.475 |
0.309 |
|
| 2015 |
Wan X, Zhou WS, Ren S, Liu DG, Xu J, Bo HL, Zhang EX, Schrimpf RD, Fleetwood DM, Ma TP. SEB Hardened Power MOSFETs with High-K Dielectrics Ieee Transactions On Nuclear Science. 62: 2830-2836. DOI: 10.1109/Tns.2015.2498145 |
0.328 |
|
| 2015 |
Ren S, Si M, Ni K, Wan X, Chen J, Chang S, Sun X, Zhang EX, Reed RA, Fleetwood DM, Ye P, Cui S, Ma TP. Total Ionizing Dose (TID) Effects in Extremely Scaled Ultra-Thin Channel Nanowire (NW) Gate-All-Around (GAA) InGaAs MOSFETs Ieee Transactions On Nuclear Science. 62: 2888-2893. DOI: 10.1109/Tns.2015.2497090 |
0.521 |
|
| 2015 |
Ni K, Zhang EX, Samsel IK, Schrimpf RD, Reed RA, Fleetwood DM, Sternberg AL, McCurdy MW, Ren S, Ma TP, Dong L, Zhang JY, Ye PD. Charge Collection Mechanisms in GaAs MOSFETs Ieee Transactions On Nuclear Science. 62: 2752-2759. DOI: 10.1109/Tns.2015.2495203 |
0.442 |
|
| 2015 |
Arutt CN, Warren KM, Schrimpf RD, Weller RA, Kauppila JS, Rowe JD, Sternberg AL, Reed RA, Ball DR, Fleetwood DM. Proton Irradiation as a Screen for Displacement-Damage Sensitivity in Bipolar Junction Transistors Ieee Transactions On Nuclear Science. 62: 2498-2504. DOI: 10.1109/Tns.2015.2494584 |
0.386 |
|
| 2015 |
Samsel IK, Zhang EX, Sternberg AL, Ni K, Reed RA, Fleetwood DM, Alles ML, Schrimpf RD, Linten D, Mitard J, Witters L, Collaert N. Charge Collection Mechanisms of Ge-Channel Bulk p MOSFETs Ieee Transactions On Nuclear Science. 62: 2725-2731. DOI: 10.1109/Tns.2015.2489020 |
0.398 |
|
| 2015 |
Wang L, Zhang EX, Schrimpf RD, Fleetwood DM, Duan GX, Hachtel JA, Zhang CX, Reed RA, Samsel IK, Alles ML, Witters L, Collaert N, Linten D, Mitard J, Chisholm MF, et al. Total Ionizing Dose Effects on Ge Channel pFETs with Raised Si0.55Ge0.45 Source/Drain Ieee Transactions On Nuclear Science. 62: 2412-2416. DOI: 10.1109/Tns.2015.2489019 |
0.484 |
|
| 2015 |
Chen J, Puzyrev YS, Jiang R, Zhang EX, McCurdy MW, Fleetwood DM, Schrimpf RD, Pantelides ST, Arehart AR, Ringel SA, Saunier P, Lee C. Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs Ieee Transactions On Nuclear Science. 62: 2423-2430. DOI: 10.1109/Tns.2015.2488650 |
0.436 |
|
| 2015 |
Shen X, Puzyrev YS, Fleetwood DM, Schrimpf RD, Pantelides ST. Quantum mechanical modeling of radiation-induced defect dynamics in electronic devices Ieee Transactions On Nuclear Science. 62: 2169-2180. DOI: 10.1109/Tns.2015.2470665 |
0.459 |
|
| 2015 |
Fleetwood D, Brown D, Girard S, Gouker P, Gerardin S, Quinn H, Barnaby H. 2015 Special Issue of the IEEE Transactions on Nuclear Science Modeling and Simulation of Radiation Effects Editor Comments Ieee Transactions On Nuclear Science. 62: 1439. DOI: 10.1109/Tns.2015.2462231 |
0.324 |
|
| 2015 |
Reed RA, Weller RA, Mendenhall MH, Fleetwood DM, Warren KM, Sierawski BD, King MP, Schrimpf RD, Auden EC. Physical Processes and Applications of the Monte Carlo Radiative Energy Deposition (MRED) Code Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.2015.2454446 |
0.367 |
|
| 2015 |
Fleetwood DM. $1/f$ Noise and Defects in Microelectronic Materials and Devices Ieee Transactions On Nuclear Science. 62: 1462-1486. DOI: 10.1109/Tns.2015.2405852 |
0.405 |
|
| 2015 |
Shank JC, Tellekamp MB, Zhang EX, Bennett WG, McCurdy MW, Fleetwood DM, Alles ML, Schrimpf RD, Doolittle WA. Self-healing of proton damage in lithium niobite (LiNbO}2) Ieee Transactions On Nuclear Science. 62: 542-547. DOI: 10.1109/Tns.2015.2398513 |
0.409 |
|
| 2015 |
Bhandaru S, Hu S, Fleetwood DM, Weiss SM. Total ionizing dose effects on silicon ring resonators Ieee Transactions On Nuclear Science. 62: 323-328. DOI: 10.1109/Tns.2014.2387772 |
0.392 |
|
| 2015 |
Duan GX, Hatchtel J, Shen X, Zhang EX, Zhang CX, Tuttle BR, Fleetwood DM, Schrimpf RD, Reed RA, Franco J, Linten D, Mitard J, Witters L, Collaert N, Chisholm MF, et al. Activation Energies for Oxide- and Interface-Trap Charge Generation Due to Negative-Bias Temperature Stress of Si-Capped SiGe-pMOSFETs Ieee Transactions On Device and Materials Reliability. 15: 352-358. DOI: 10.1109/Tdmr.2015.2442152 |
0.461 |
|
| 2015 |
Sasikumar A, Zhang Z, Kumar P, Zhang EX, Fleetwood DM, Schrimpf RD, Saunier P, Lee C, Ringel SA, Arehart AR. Proton irradiation-induced traps causing V<inf>T</inf> instabilities and RF degradation in GaN HEMTs Ieee International Reliability Physics Symposium Proceedings. 2015: 2E31-2E36. DOI: 10.1109/IRPS.2015.7112688 |
0.378 |
|
| 2015 |
Zhang Z, Farzana E, Sun WY, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, McSkimming B, Kyle ECH, Speck JS, Arehart AR, Ringel SA. Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN Journal of Applied Physics. 118. DOI: 10.1063/1.4933174 |
0.391 |
|
| 2015 |
Gaur G, Koktysh DS, Fleetwood DM, Weller RA, Reed RA, Weiss SM. Influence of interfacial oxide on the optical properties of single layer CdTe/CdS quantum dots in porous silicon scaffolds Applied Physics Letters. 107. DOI: 10.1063/1.4928663 |
0.329 |
|
| 2015 |
Puzyrev YS, Schrimpf RD, Fleetwood DM, Pantelides ST. Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors Applied Physics Letters. 106. DOI: 10.1063/1.4907675 |
0.328 |
|
| 2015 |
Zhang Z, Arehart AR, Kyle ECH, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, Speck JS, Ringel SA. Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy Applied Physics Letters. 106. DOI: 10.1063/1.4905783 |
0.361 |
|
| 2015 |
Bhandaru S, Zhang EX, Fleetwood DM, Reed RA, Weller RA, Harl RR, Rogers BR, Weiss SM. Ultra-thin oxide growth on silicon during 10 keV x-ray irradiation Surface Science. 635: 49-54. DOI: 10.1016/J.Susc.2014.12.006 |
0.401 |
|
| 2014 |
Sasikumar A, Arehart AR, Kaun SW, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, Speck JS, Ringel SA. Defects in GaN based transistors Proceedings of Spie - the International Society For Optical Engineering. 8986. DOI: 10.1117/12.2042020 |
0.418 |
|
| 2014 |
Chatterjee I, Zhang EX, Bhuva BL, Reed RA, Alles ML, Mahatme NN, Ball DR, Schrimpf RD, Fleetwood DM, Linten D, Simoen E, Mitard J, Claeys C. Geometry dependence of total-dose effects in bulk FinFETs Ieee Transactions On Nuclear Science. 61: 2951-2958. DOI: 10.1109/Tns.2014.2367157 |
0.477 |
|
| 2014 |
Zhang CX, Wang B, Duan GX, Zhang EX, Fleetwood DM, Alles ML, Schrimpf RD, Rooney AP, Khestanova E, Auton G, Gorbachev RV, Haigh SJ, Pantelides ST. Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices Ieee Transactions On Nuclear Science. 61: 2868-2873. DOI: 10.1109/Tns.2014.2367036 |
0.421 |
|
| 2014 |
Zhang CX, Newaz AKM, Wang B, Zhang EX, Duan GX, Fleetwood DM, Alles ML, Schrimpf RD, Bolotin KI, Pantelides ST. Electrical stress and total ionizing dose effects on {\hbox {MoS}}2 transistors Ieee Transactions On Nuclear Science. 61: 2862-2867. DOI: 10.1109/Tns.2014.2365522 |
0.457 |
|
| 2014 |
Ni K, Zhang EX, Hooten NC, Bennett WG, McCurdy MW, Sternberg AL, Schrimpf RD, Reed RA, Fleetwood DM, Alles ML, Kim TW, Lin J, Del Alamo JA. Single-event transient response of InGaAs MOSFETs Ieee Transactions On Nuclear Science. 61: 3550-3556. DOI: 10.1109/Tns.2014.2365437 |
0.416 |
|
| 2014 |
Luo J, Chen J, Chai Z, Lu K, He W, Yang Y, Zhang EX, Fleetwood DM, Wang X. Total Dose Effects in Tunnel-Diode Body-Contact SOI $n$MOSFETs Ieee Transactions On Nuclear Science. 61: 3018-3022. DOI: 10.1109/Tns.2014.2364923 |
0.34 |
|
| 2014 |
Duan GX, Zhang CX, Zhang EX, Hachtel J, Fleetwood DM, Schrimpf RD, Reed RA, Alles ML, Pantelides ST, Bersuker G, Young CD. Bias dependence of total ionizing dose effects in SiGe-SiO2HfO2 p MOS FinFETs Ieee Transactions On Nuclear Science. 61: 2834-2838. DOI: 10.1109/Tns.2014.2362918 |
0.512 |
|
| 2014 |
Chen J, Zhang EX, Zhang CX, McCurdy MW, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle ECH, Speck JS. RF performance of proton-irradiated AlGaN/GaN HEMTs Ieee Transactions On Nuclear Science. 61: 2959-2964. DOI: 10.1109/Tns.2014.2362872 |
0.426 |
|
| 2014 |
Weeden-Wright SL, Bennett WG, Hooten NC, Zhang EX, McCurdy MW, King MP, Weller RA, Mendenhall MH, Alles ML, Linten D, Jurczak M, Degraeve R, Fantini A, Reed RA, Fleetwood DM, et al. TID and displacement damage resilience of 1T1R HfO2 Resistive Memories Ieee Transactions On Nuclear Science. 61: 2972-2978. DOI: 10.1109/Tns.2014.2362538 |
0.338 |
|
| 2014 |
Haeffner TD, Loveless TD, Zhang EX, Sternberg AL, Jagannathan S, Schrimpf RD, Kauppila JS, Alles ML, Fleetwood DM, Massengill LW, Haddad NF. Irradiation and temperature effects for a 32 nm RF silicon-on-insulator CMOS process Ieee Transactions On Nuclear Science. 61: 3037-3042. DOI: 10.1109/Tns.2014.2360455 |
0.375 |
|
| 2014 |
Cardoso AS, Chakraborty PS, Karaulac N, Fleischhauer DM, Lourenco NE, Fleetwood ZE, Omprakash AP, England TD, Jung S, Najafizadeh L, Roche NJH, Khachatrian A, Warner JH, McMorrow D, Buchner SP, ... ... Fleetwood DM, et al. Single-event transient and total dose response of precision voltage reference circuits designed in a 90-nm SiGe BiCMOS technology Ieee Transactions On Nuclear Science. 61: 3210-3217. DOI: 10.1109/Tns.2014.2358078 |
0.336 |
|
| 2014 |
Zhang EX, Samsel IK, Hooten NC, Bennett WG, Funkhouser ED, Ni K, Ball DR, McCurdy MW, Fleetwood DM, Reed RA, Alles ML, Schrimpf RD, Linten D, Mitard J. Heavy-ion and laser induced charge collection in sige channel pMOSFETs Ieee Transactions On Nuclear Science. 61: 3187-3192. DOI: 10.1109/Tns.2014.2357440 |
0.33 |
|
| 2014 |
Arora R, Fleetwood ZE, Zhang EX, Lourenco NE, Cressler JD, Fleetwood DM, Schrimpf RD, Sutton AK, Freeman G, Greene B. Impact of technology scaling in sub-100 nm nMOSFETs on total-dose radiation response and hot-carrier reliability Ieee Transactions On Nuclear Science. 61: 1426-1432. DOI: 10.1109/Tns.2014.2320494 |
0.422 |
|
| 2014 |
Puzyrev Y, Paccagnella A, Pantelides ST, Mukherjee S, Chen J, Roy T, Silvestri M, Schrimpf RD, Fleetwood DM, Singh J, Hinckley JM. Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs Ieee Transactions On Electron Devices. 61: 1316-1320. DOI: 10.1109/Ted.2014.2309278 |
0.399 |
|
| 2014 |
Fleetwood ZE, Kenyon EW, Lourenco NE, Jain S, Zhang EX, England TD, Cressler JD, Schrimpf RD, Fleetwood DM. Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems Ieee Transactions On Device and Materials Reliability. 14: 844-848. DOI: 10.1109/Tdmr.2014.2331980 |
0.398 |
|
| 2014 |
Zhang CX, Zhang EX, Fleetwood DM, Alles ML, Schrimpf RD, Rutherglen C, Galatsis K. Total-ionizing-dose effects and reliability of carbon nanotube FET devices Microelectronics Reliability. 54: 2355-2359. DOI: 10.1016/J.Microrel.2014.05.011 |
0.392 |
|
| 2013 |
Gaur G, Koktysh D, Fleetwood DM, Reed RA, Weller RA, Weiss SM. Effects of x-ray and gamma-ray irradiation on the optical properties of quantum dots immobilized in porous silicon Proceedings of Spie. 8725. DOI: 10.1117/12.2015595 |
0.315 |
|
| 2013 |
Samsel IK, Zhang EX, Hooten NC, Funkhouser ED, Bennett WG, Reed RA, Schrimpf RD, McCurdy MW, Fleetwood DM, Weller RA, Vizkelethy G, Sun X, Ma TP, Saadat OI, Palacios T. Charge collection mechanisms in AlGaN/GaN MOS high electron mobility transistors Ieee Transactions On Nuclear Science. 60: 4439-4445. DOI: 10.1109/Tns.2013.2289383 |
0.5 |
|
| 2013 |
Bi JS, Han ZS, Zhang EX, McCurdy MW, Reed RA, Schrimpf RD, Fleetwood DM, Alles ML, Weller RA, Linten D, Jurczak M, Fantini A. The impact of X-ray and proton irradiation on HfO2/Hf-based bipolar resistive memories Ieee Transactions On Nuclear Science. 60: 4540-4546. DOI: 10.1109/Tns.2013.2289369 |
0.433 |
|
| 2013 |
Greenlee JD, Shank JC, Tellekamp MB, Zhang EX, Bi J, Fleetwood DM, Alles ML, Schrimpf RD, Doolittle WA. Radiation effects on LiNbO2 memristors for neuromorphic computing applications Ieee Transactions On Nuclear Science. 60: 4555-4562. DOI: 10.1109/Tns.2013.2288218 |
0.425 |
|
| 2013 |
Chatterjee I, Zhang EX, Bhuva BL, Alles MA, Schrimpf RD, Fleetwood DM, Fang YP, Oates A. Bias dependence of total-dose effects in bulk finfets Ieee Transactions On Nuclear Science. 60: 4476-4482. DOI: 10.1109/Tns.2013.2287872 |
0.491 |
|
| 2013 |
King MP, Reed RA, Weller RA, Mendenhall MH, Schrimpf RD, Sierawski BD, Sternberg AL, Narasimham B, Wang JK, Pitta E, Bartz B, Reed D, Monzel C, Baumann RC, Deng X, ... ... Fleetwood DM, et al. Electron-induced single-event upsets in static random access memory Ieee Transactions On Nuclear Science. 60: 4122-4129. DOI: 10.1109/Tns.2013.2286523 |
0.391 |
|
| 2013 |
Zhang EX, Fleetwood DM, Pate ND, Reed RA, Witulski AF, Schrimpf RD. Time-Domain Reflectometry Measurements of Total-Ionizing-Dose Degradation of $n$ MOSFETs Ieee Transactions On Nuclear Science. 60: 4470-4475. DOI: 10.1109/Tns.2013.2285129 |
0.46 |
|
| 2013 |
Jagannathan S, Loveless TD, Zhang EX, Fleetwood DM, Schrimpf RD, Haeffner TD, Kauppila JS, Mahatme N, Bhuva BL, Alles ML, Holman WT, Witulski AF, Massengill LW. Sensitivity of high-frequency RF circuits to total ionizing dose degradation Ieee Transactions On Nuclear Science. 60: 4498-4504. DOI: 10.1109/Tns.2013.2283457 |
0.371 |
|
| 2013 |
Chen J, Puzyrev YS, Zhang CX, Zhang EX, McCurdy MW, Fleetwood DM, Schrimpf RD, Pantelides ST, Kaun SW, Kyle ECH, Speck JS. Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs Ieee Transactions On Nuclear Science. 60: 4080-4086. DOI: 10.1109/Tns.2013.2281771 |
0.398 |
|
| 2013 |
Sun X, Saadat OI, Chen J, Zhang EX, Cui S, Palacios T, Fleetwood DM, Ma TP. Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs Ieee Transactions On Nuclear Science. 60: 4074-4079. DOI: 10.1109/Tns.2013.2278314 |
0.496 |
|
| 2013 |
Fleetwood DM. Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices Ieee Transactions On Nuclear Science. 60: 1706-1730. DOI: 10.1109/Tns.2013.2259260 |
0.524 |
|
| 2013 |
Simoen E, Gaillardin M, Paillet P, Reed RA, Schrimpf RD, Alles ML, El-Mamouni F, Fleetwood DM, Griffoni A, Claeys C. Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors Ieee Transactions On Nuclear Science. 60: 1970-1991. DOI: 10.1109/Tns.2013.2255313 |
0.477 |
|
| 2013 |
Weeden-Wright SL, Gollub SL, Harl R, Hmelo AB, Fleetwood DM, Rogers BR, Schrimpf RD, Walker DG. Radiation effects on the photoluminescence of rare-earth doped pyrochlore powders Ieee Transactions On Nuclear Science. 60: 2444-2449. DOI: 10.1109/Tns.2013.2246582 |
0.391 |
|
| 2013 |
Sun X, Xue F, Chen J, Zhang EX, Cui S, Lee J, Fleetwood DM, Ma TP. Total Ionizing Dose Radiation Effects in Al 2 O $_{3}$ -Gated Ultra-Thin Body In $_{0.7}$ Ga $_{0.3}$ As MOSFETs Ieee Transactions On Nuclear Science. 60: 402-407. DOI: 10.1109/Tns.2012.2237522 |
0.513 |
|
| 2013 |
Zhang CX, Shen X, Zhang EX, Fleetwood DM, Schrimpf RD, Francis SA, Roy T, Dhar S, Ryu SH, Pantelides ST. Temperature dependence and postirradiation annealing response of the 1/f noise of 4H-SiC MOSFETs Ieee Transactions On Electron Devices. 60: 2361-2367. DOI: 10.1109/Ted.2013.2263426 |
0.407 |
|
| 2013 |
Zhang CX, Zhang EX, Fleetwood DM, Schrimpf RD, Dhar S, Ryu S, Shen X, Pantelides ST. Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs Ieee Electron Device Letters. 34: 117-119. DOI: 10.1109/Led.2012.2228161 |
0.368 |
|
| 2013 |
Chatterjee I, Zhang EX, Bhuva BL, Fleetwood DM, Fang YP, Oates A. Length and fin number dependence of ionizing radiation-induced degradation in bulk FinFETs Ieee International Reliability Physics Symposium Proceedings. DOI: 10.1109/IRPS.2013.6532115 |
0.424 |
|
| 2013 |
Zhang Z, Arehart AR, Cinkilic E, Chen J, Zhang EX, Fleetwood DM, Schrimpf RD, McSkimming B, Speck JS, Ringel SA. Impact of proton irradiation on deep level states in n-GaN Applied Physics Letters. 103. DOI: 10.1063/1.4816423 |
0.373 |
|
| 2013 |
Mukherjee S, Puzyrev Y, Hinckley J, Schrimpf RD, Fleetwood DM, Singh J, Pantelides ST. Role of bias conditions in the hot carrier degradation of AlGaN/GaN high electron mobility transistors Physica Status Solidi (C). 10: 794-798. DOI: 10.1002/Pssc.201200620 |
0.382 |
|
| 2012 |
Zhang CX, Zhang EX, Fleetwood DM, Alles ML, Schrimpf RD, Song EB, Kim SM, Galatsis K, Wang KLW. Electrical Stress and Total Ionizing Dose Effects on Graphene-Based Non-Volatile Memory Devices Ieee Transactions On Nuclear Science. 59: 2974-2978. DOI: 10.1109/Tns.2012.2224135 |
0.364 |
|
| 2012 |
Puzyrev YS, Wang B, Zhang EX, Zhang CX, Newaz AKM, Bolotin KI, Fleetwood DM, Schrimpf RD, Pantelides ST. Surface Reactions and Defect Formation in Irradiated Graphene Devices Ieee Transactions On Nuclear Science. 59: 3039-3044. DOI: 10.1109/Tns.2012.2224134 |
0.327 |
|
| 2012 |
Mahatme NN, Zhang EX, Reed RA, Bhuva BL, Schrimpf RD, Fleetwood DM, Linten D, Simoen E, Griffoni A, Aoulaiche M, Jurczak M, Groeseneken G. Impact of back-gate bias and device geometry on the total ionizing dose response of 1-transistor floating body rams Ieee Transactions On Nuclear Science. 59: 2966-2973. DOI: 10.1109/Tns.2012.2223828 |
0.466 |
|
| 2012 |
Rowsey NL, Law ME, Schrimpf RD, Fleetwood DM, Tuttle BR, Pantelides ST. Mechanisms Separating Time-Dependent and True Dose-Rate Effects in Irradiated Bipolar Oxides Ieee Transactions On Nuclear Science. 59: 3069-3076. DOI: 10.1109/Tns.2012.2222669 |
0.437 |
|
| 2012 |
Zhang EX, Fleetwood DM, Duan GX, Zhang CX, Francis SA, Schrimpf RD. Charge pumping measurements of radiation-induced interface-trap density in floating-body SOI FinFETs Ieee Transactions On Nuclear Science. 59: 3062-3068. DOI: 10.1109/Tns.2012.2222443 |
0.791 |
|
| 2012 |
El-Mamouni F, Zhang EX, Ball DR, Sierawski B, King MP, Schrimpf RD, Reed RA, Alles ML, Fleetwood DM, Linten D, Simoen E, Vizkelethy G. Heavy-ion-induced current transients in bulk and SOI FinFETs Ieee Transactions On Nuclear Science. 59: 2674-2681. DOI: 10.1109/Tns.2012.2221478 |
0.425 |
|
| 2012 |
Hughart DR, Schrimpf RD, Fleetwood DM, Rowsey NL, Law ME, Tuttle BR, Pantelides ST. The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing Ieee Transactions On Nuclear Science. 59: 3087-3092. DOI: 10.1109/Tns.2012.2220982 |
0.46 |
|
| 2012 |
Zhang EX, Newaz AKM, Wang B, Zhang CX, Fleetwood DM, Bolotin KI, Schrimpf RD, Pantelides ST, Alles ML. Ozone-exposure and annealing effects on graphene-on-SiO 2 transistors Applied Physics Letters. 101. DOI: 10.1063/1.4753817 |
0.325 |
|
| 2012 |
Zhang EX, Fleetwood DM, Francis SA, Zhang CX, El-Mamouni F, Schrimpf RD. Charge pumping and DCIV currents in SOI FinFETs Solid-State Electronics. 78: 75-79. DOI: 10.1016/J.Sse.2012.05.043 |
0.754 |
|
| 2012 |
Rezzak N, Maillard P, Schrimpf RD, Alles ML, Fleetwood DM, Li YA. The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies Microelectronics Reliability. 52: 2521-2526. DOI: 10.1016/J.Microrel.2012.05.013 |
0.425 |
|
| 2012 |
Pantelides ST, Puzyrev Y, Shen X, Roy T, Dasgupta S, Tuttle BR, Fleetwood DM, Schrimpf RD. Reliability of III-V devices - The defects that cause the trouble Microelectronic Engineering. 90: 3-8. DOI: 10.1016/J.Mee.2011.04.019 |
0.347 |
|
| 2011 |
Li M, Li YF, Wu YJ, Cai S, Zhu NY, Rezzak N, Schrimpf RD, Fleetwood DM, Wang JQ, Cheng XX, Wang Y, Wang DL, Hao Y. Including radiation effects and dependencies on process-related variability in advanced foundry SPICE models using a new physical model and parameter extraction approach Ieee Transactions On Nuclear Science. 58: 2876-2882. DOI: 10.1109/Tns.2011.2171503 |
0.306 |
|
| 2011 |
Hughart DR, Schrimpf RD, Fleetwood DM, Tuttle BR, Pantelides ST. Mechanisms of interface trap buildup and annealing during elevated temperature irradiation Ieee Transactions On Nuclear Science. 58: 2930-2936. DOI: 10.1109/Tns.2011.2171364 |
0.414 |
|
| 2011 |
Puzyrev YS, Roy T, Zhang EX, Fleetwood DM, Schrimpf RD, Pantelides ST. Radiation-Induced Defect Evolution and Electrical Degradation of AlGaN/GaN High-Electron-Mobility Transistors Ieee Transactions On Nuclear Science. 58: 2918-2924. DOI: 10.1109/Tns.2011.2170433 |
0.439 |
|
| 2011 |
Rowsey NL, Law ME, Schrimpf RD, Fleetwood DM, Tuttle BR, Pantelides ST. A quantitative model for ELDRS and H 2 degradation effects in irradiated oxides based on first principles calculations Ieee Transactions On Nuclear Science. 58: 2937-2944. DOI: 10.1109/Tns.2011.2169458 |
0.432 |
|
| 2011 |
Dasgupta A, Fleetwood DM, Reed RA, Weller RA, Mendenhall MH. Effects of Metal Gates and Back-End-of-Line Materials on X-Ray Dose in ${\rm HfO}_{2}$ Gate Oxide Ieee Transactions On Nuclear Science. 58: 3139-3144. DOI: 10.1109/Tns.2011.2169279 |
0.36 |
|
| 2011 |
Song J, Choi BK, Zhang EX, Schrimpf RD, Fleetwood DM, Park C, Jeong Y, Kim O. Fin Width and Bias Dependence of the Response of Triple-Gate MOSFETs to Total Dose Irradiation Ieee Transactions On Nuclear Science. 58: 2871-2875. DOI: 10.1109/Tns.2011.2168977 |
0.501 |
|
| 2011 |
Zhang CX, Zhang EX, Fleetwood DM, Schrimpf RD, Dhar S, Ryu S, Shen X, Pantelides ST. Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices Ieee Transactions On Nuclear Science. 58: 2925-2929. DOI: 10.1109/Tns.2011.2168424 |
0.542 |
|
| 2011 |
Zhang EX, Newaz AKM, Wang B, Bhandaru S, Zhang CX, Fleetwood DM, Bolotin KI, Pantelides ST, Alles ML, Schrimpf RD, Weiss SM, Reed RA, Weller RA. Low-energy X-ray and ozone-exposure induced defect formation in graphene materials and devices Ieee Transactions On Nuclear Science. 58: 2961-2967. DOI: 10.1109/Tns.2011.2167519 |
0.367 |
|
| 2011 |
Arora R, Zhang EX, Seth S, Cressler JD, Fleetwood DM, Schrimpf RD, Rosa GL, Sutton AK, Nayfeh HM, Freeman G. Trade-Offs Between RF Performance and Total-Dose Tolerance in 45-nm RF-CMOS Ieee Transactions On Nuclear Science. 58: 2830-2837. DOI: 10.1109/Tns.2011.2167518 |
0.49 |
|
| 2011 |
Zhang CX, Francis SA, Zhang EX, Fleetwood DM, Schrimpf RD, Galloway KF, Simoen E, Mitard J, Claeys C. Effect of ionizing radiation on defects and 1/f noise in Ge pMOSFETs Ieee Transactions On Nuclear Science. 58: 764-769. DOI: 10.1109/Tns.2011.2128347 |
0.814 |
|
| 2011 |
DasGupta S, Shen X, Schrimpf RD, Reed RA, Pantelides ST, Fleetwood DM, Bergman JI, Brar B. Degradation in InAs–AlSb HEMTs Under Hot-Carrier Stress Ieee Transactions On Electron Devices. 58: 1499-1507. DOI: 10.1109/Ted.2011.2116157 |
0.457 |
|
| 2011 |
Rowsey NL, Law ME, Schrimpf RD, Fleetwood DM, Tuttle BR, Pantelides ST. Radiation-induced oxide charge in low- and high-H 2 environments Proceedings of the European Conference On Radiation and Its Effects On Components and Systems, Radecs. 51-53. DOI: 10.1109/RADECS.2011.6131384 |
0.316 |
|
| 2011 |
Warnick KH, Puzyrev Y, Roy T, Fleetwood DM, Schrimpf RD, Pantelides ST. Room-temperature diffusive phenomena in semiconductors: The case of AlGaN Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.214109 |
0.317 |
|
| 2011 |
Roy T, Zhang EX, Puzyrev YS, Shen X, Fleetwood DM, Schrimpf RD, Koblmueller G, Chu R, Poblenz C, Fichtenbaum N, Suh CS, Mishra UK, Speck JS, Pantelides ST. Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors Applied Physics Letters. 99. DOI: 10.1063/1.3662041 |
0.393 |
|
| 2011 |
Shen X, Zhang EX, Zhang CX, Fleetwood DM, Schrimpf RD, Dhar S, Ryu S, Pantelides ST. Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures Applied Physics Letters. 98: 063507. DOI: 10.1063/1.3554428 |
0.371 |
|
| 2011 |
Puzyrev YS, Roy T, Beck M, Tuttle BR, Schrimpf RD, Fleetwood DM, Pantelides ST. Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors Journal of Applied Physics. 109. DOI: 10.1063/1.3524185 |
0.38 |
|
| 2011 |
Arinero R, Zhang EX, Rezzak N, Schrimpf RD, Fleetwood DM, Choï BK, Hmelo AB, Mekki J, Touboul AD, Saigné F. High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors Microelectronics Reliability. 51: 2093-2096. DOI: 10.1016/J.Microrel.2011.05.019 |
0.415 |
|
| 2011 |
Roy T, Puzyrev YS, Zhang EX, Dasgupta S, Francis SA, Fleetwood DM, Schrimpf RD, Mishra UK, Speck JS, Pantelides ST. 1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH3-rich conditions Microelectronics Reliability. 51: 212-216. DOI: 10.1016/J.Microrel.2010.09.022 |
0.747 |
|
| 2011 |
Schrimpf RD, Fleetwood DM, Alles ML, Reed RA, Lucovsky G, Pantelides ST. Radiation effects in new materials for nano-devices Microelectronic Engineering. 88: 1259-1264. DOI: 10.1016/J.Mee.2011.03.117 |
0.39 |
|
| 2010 |
Li Y, Rezzak N, Zhang EX, Schrimpf RD, Fleetwood DM, Wang J, Wang D, Wu Y, Cai S. Including the effects of process-related variability on radiation response in advanced foundry process design kits Ieee Transactions On Nuclear Science. 57: 3570-3574. DOI: 10.1109/Tns.2010.2086478 |
0.369 |
|
| 2010 |
Tuttle BR, Hughart DR, Schrimpf RD, Fleetwood DM, Pantelides ST. Defect interactions of H2 in SiO2: Implications for ELDRS and latent interface trap buildup Ieee Transactions On Nuclear Science. 57: 3046-3053. DOI: 10.1109/Tns.2010.2086076 |
0.388 |
|
| 2010 |
Rezzak N, Schrimpf RD, Alles ML, Zhang EX, Fleetwood DM, Li YA. Layout-related stress effects on radiation-induced leakage current Ieee Transactions On Nuclear Science. 57: 3288-3292. DOI: 10.1109/Tns.2010.2083690 |
0.496 |
|
| 2010 |
Zhang CX, Zhang EX, Fleetwood DM, Schrimpf RD, Galloway KF, Simoen E, Mitard J, Claeys C. Effects of processing and radiation bias on leakage currents in Ge pMOSFETs Ieee Transactions On Nuclear Science. 57: 3066-3070. DOI: 10.1109/Tns.2010.2080286 |
0.509 |
|
| 2010 |
Dasgupta A, Fleetwood DM, Reed RA, Weller RA, Mendenhall MH, Sierawski BD. Dose enhancement and reduction in SiO2 and high-κ MOS insulators Ieee Transactions On Nuclear Science. 57: 3463-3469. DOI: 10.1109/Tns.2010.2079950 |
0.406 |
|
| 2010 |
El-Mamouni F, Bawedin M, Zhang EX, Schrimpf RD, Fleetwood DM, Cristoloveanu S. Total Dose Effects on the Performance of Irradiated Capacitorless MSDRAM Cells Ieee Transactions On Nuclear Science. 57: 3054-3059. DOI: 10.1109/Tns.2010.2077310 |
0.435 |
|
| 2010 |
Zhang EX, Fleetwood DM, El-Mamouni FE, Alles ML, Schrimpf RD, Xiong W, Hobbs C, Akarvardar K, Cristoloveanu S. Total Ionizing Dose Effects on FinFET-Based Capacitor-Less 1T-DRAMs Ieee Transactions On Nuclear Science. 57: 3298-3304. DOI: 10.1109/Tns.2010.2075942 |
0.386 |
|
| 2010 |
Roy T, Zhang EX, Puzyrev YS, Fleetwood DM, Schrimpf RD, Choi BK, Hmelo AB, Pantelides ST. Process Dependence of Proton-Induced Degradation in GaN HEMTs Ieee Transactions On Nuclear Science. 57: 3060-3065. DOI: 10.1109/Tns.2010.2073720 |
0.399 |
|
| 2010 |
Francis SA, Dasgupta A, Fleetwood DM. Effects of total dose irradiation on the gate-voltage dependence of the 1/f noise of nMOS and pMOS transistors Ieee Transactions On Electron Devices. 57: 503-510. DOI: 10.1109/Ted.2009.2036297 |
0.786 |
|
| 2010 |
Li Y, Rezzak N, Schrimpf RD, Fleetwood DM, Zhang E, Wu Y, Cai S, Wang J, Wang D. Including the effects of process-related variability on radiation response using a new test chip Icsict-2010 - 2010 10th Ieee International Conference On Solid-State and Integrated Circuit Technology, Proceedings. 1636-1638. DOI: 10.1109/ICSICT.2010.5667408 |
0.301 |
|
| 2010 |
King MP, Gong D, Liu C, Liu T, Xiang AC, Ye J, Schrimpf RD, Reed RA, Alles ML, Fleetwood DM. Response of a 0.25 μm thin-film silicon-on-sapphire CMOS technology to total ionizing dose Journal of Instrumentation. 5. DOI: 10.1088/1748-0221/5/11/C11021 |
0.456 |
|
| 2010 |
Ryckman JD, Reed RA, Weller RA, Fleetwood DM, Weiss SM. Enhanced room temperature oxidation in silicon and porous silicon under 10 keV x-ray irradiation Journal of Applied Physics. 108: 113528. DOI: 10.1063/1.3512965 |
0.421 |
|
| 2010 |
Shen X, Dasgupta S, Reed RA, Schrimpf RD, Fleetwood DM, Pantelides ST. Recoverable degradation in InAs/AlSb high-electron mobility transistors: The role of hot carriers and metastable defects in AlSb Journal of Applied Physics. 108. DOI: 10.1063/1.3505795 |
0.397 |
|
| 2010 |
Tsetseris L, Fleetwood DM, Schrimpf RD, Pantelides ST. Hydrogen-dopant interactions in SiGe and strained Si Applied Physics Letters. 96. DOI: 10.1063/1.3456395 |
0.371 |
|
| 2010 |
Roy T, Puzyrev YS, Tuttle BR, Fleetwood DM, Schrimpf RD, Brown DF, Mishra UK, Pantelides ST. Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions Applied Physics Letters. 96. DOI: 10.1063/1.3377004 |
0.371 |
|
| 2009 |
Fleetwood DM, Francis SA, Dasgupta A, Zhou XJ, Schrimpf RD, Shaneyfelt MR, Schwank JR. Moisture effects on the 1/f noise of MOS devices Ecs Transactions. 19: 363-377. DOI: 10.1149/1.3122102 |
0.364 |
|
| 2009 |
Beck MJ, Puzyrev YS, Sergueev N, Varga K, Schrimpf RD, Fleetwood DM, Pantelides ST. The role of atomic displacements in ION-induced dielectric breakdown Ieee Transactions On Nuclear Science. 56: 3210-3217. DOI: 10.1109/Tns.2009.2034157 |
0.422 |
|
| 2009 |
Kalavagunta A, Silvestri M, Beck MJ, Dixit SK, Schrimpf RD, Reed RA, Fleetwood DM, Shen L, Mishra UK. Impact of proton irradiation-induced bulk defects on gate-lag in GaN HEMTs Ieee Transactions On Nuclear Science. 56: 3192-3195. DOI: 10.1109/Tns.2009.2034156 |
0.473 |
|
| 2009 |
Mamouni FE, Zhang EX, Schrimpf RD, Fleetwood DM, Reed RA, Cristoloveanu S, Xiong W. Fin-Width Dependence of Ionizing Radiation-Induced Subthreshold-Swing Degradation in 100-nm-Gate-Length FinFETs Ieee Transactions On Nuclear Science. 56: 3250-3255. DOI: 10.1109/Tns.2009.2034155 |
0.487 |
|
| 2009 |
Hughart DR, Schrimpf RD, Fleetwood DM, Chen XJ, Barnaby HJ, Holbert KE, Pease RL, Platteter DG, Tuttle BR, Pantelides ST. The effects of aging and hydrogen on the radiation response of gated lateral PNP bipolar transistors Ieee Transactions On Nuclear Science. 56: 3361-3366. DOI: 10.1109/Tns.2009.2034151 |
0.474 |
|
| 2009 |
Silvestri M, Gerardin S, Schrimpf RD, Fleetwood DM, Faccio F, Paccagnella A. The Role of Irradiation Bias on the Time-Dependent Dielectric Breakdown of 130-nm MOSFETs Exposed to X-rays Ieee Transactions On Nuclear Science. 56: 3244-3249. DOI: 10.1109/Tns.2009.2033360 |
0.448 |
|
| 2009 |
Arora R, Rozen J, Fleetwood DM, Galloway KF, Xuan Zhang C, Han J, Dimitrijev S, Kong F, Feldman LC, Pantelides ST, Schrimpf RD. Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides Ieee Transactions On Nuclear Science. 56: 3185-3191. DOI: 10.1109/Tns.2009.2031604 |
0.474 |
|
| 2008 |
Batyrev IG, Hughart D, Durand R, Bounasser M, Tuttle BR, Fleetwood DM, Schrimpf RD, Rashkeev SN, Dunham GW, Law M, Pantelides ST. Effects of hydrogen on the radiation response of bipolar transistors: Experiment and modeling Ieee Transactions On Nuclear Science. 55: 3039-3045. DOI: 10.1109/Tns.2008.2009353 |
0.408 |
|
| 2008 |
Beck MJ, Tuttle BR, Schrimpf RD, Fleetwood DM, Pantelides ST. Atomic displacement effects in single-event gate rupture Ieee Transactions On Nuclear Science. 55: 3025-3031. DOI: 10.1109/Tns.2008.2009215 |
0.397 |
|
| 2008 |
Chen XJ, Barnaby HJ, Vermeire B, Holbert KE, Wright D, Pease RL, Schrimpf RD, Fleetwood DM, Pantelides ST, Shaneyfelt MR, Adell P. Post-irradiation annealing mechanisms of defects generated in hydrogenated bipolar oxides Ieee Transactions On Nuclear Science. 55: 3032-3038. DOI: 10.1109/Tns.2008.2006972 |
0.427 |
|
| 2008 |
Park H, Dixit SK, Choi YS, Schrimpf RD, Fleetwood DM, Nishida T, Thompson SE. Total ionizing dose effects on strained HfO2-based nMOSFETs Ieee Transactions On Nuclear Science. 55: 2981-2985. DOI: 10.1109/Tns.2008.2006837 |
0.465 |
|
| 2008 |
Fleetwood DM, Schrimpf RD, Pantelides ST, Pease RL, Dunham GW. Electron capture, hydrogen release, and enhanced gain degradation in linear bipolar devices Ieee Transactions On Nuclear Science. 55: 2986-2991. DOI: 10.1109/Tns.2008.2006485 |
0.433 |
|
| 2008 |
Schwank JR, Shaneyfelt MR, Dasgupta A, Francis SA, Zhou XJ, Fleetwood DM, Schrimpf RD, Pantelides ST, Felix JA, Dodd PE, Ferlet-Cavrois V, Paillet P, Dalton SM, Swanson SE, Hash GL, et al. Effects of moisture and hydrogen exposure on radiation-induced MOS device degradation and its implications for long-term aging Ieee Transactions On Nuclear Science. 55: 3206-3215. DOI: 10.1109/Tns.2008.2005676 |
0.802 |
|
| 2008 |
Zhou XJ, Fleetwood DM, Schrimpf RD, Faccio F, Gonella L. Radiation effects on the 1/f noise of field-oxide field effect transistors Ieee Transactions On Nuclear Science. 55: 2975-2980. DOI: 10.1109/Tns.2008.2005107 |
0.478 |
|
| 2008 |
Kalavagunta A, Touboul A, Shen L, Schrimpf RD, Reed RA, Fleetwood DM, Jain RK, Mishra UK. Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs Ieee Transactions On Nuclear Science. 55: 2106-2112. DOI: 10.1109/Tns.2008.2001705 |
0.445 |
|
| 2008 |
Schwank JR, Shaneyfelt MR, Fleetwood DM, Felix JA, Dodd PE, Paillet P, Ferlet-Cavrois V. Radiation effects in MOS oxides Ieee Transactions On Nuclear Science. 55: 1833-1853. DOI: 10.1109/Tns.2008.2001040 |
0.797 |
|
| 2008 |
Schrimpf RD, Warren KM, Ball DR, Weller RA, Reed RA, Fleetwood DM, Massengill LW, Mendenhall MH, Rashkeev SN, Pantelides ST, Alles MA. Multi-Scale Simulation of Radiation Effects in Electronic Devices Ieee Transactions On Nuclear Science. 55: 1891-1902. DOI: 10.1109/Tns.2008.2000853 |
0.356 |
|
| 2008 |
Lu X, Pasternak R, Park H, Qi J, Tolk NH, Chatterjee A, Schrimpf RD, Fleetwood DM. Temperature-dependent second- and third-order optical nonlinear susceptibilities at the Si/ SiO2 interface Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.155311 |
0.367 |
|
| 2008 |
Faccio F, Barnaby HJ, Chen XJ, Fleetwood DM, Gonella L, McLain M, Schrimpf RD. Total ionizing dose effects in shallow trench isolation oxides Microelectronics Reliability. 48: 1000-1007. DOI: 10.1016/J.Microrel.2008.04.004 |
0.499 |
|
| 2008 |
Pantelides S, Lu Z, Nicklaw C, Bakos T, Rashkeev S, Fleetwood D, Schrimpf R. The E′ center and oxygen vacancies in SiO2 Journal of Non-Crystalline Solids. 354: 217-223. DOI: 10.1016/J.Jnoncrysol.2007.08.080 |
0.421 |
|
| 2007 |
Alles ML, Pasternak R, Lu X, Tolk NH, Schrimpf RD, Fleetwood DM, Dolan RP, Standley RW. Second harmonic generation for noninvasive metrology of silicon-on-insulator wafers Ieee Transactions On Semiconductor Manufacturing. 20: 107-112. DOI: 10.1109/Tsm.2007.896642 |
0.373 |
|
| 2007 |
Dixit SK, Zhou XJ, Schrimpf RD, Fleetwood DM, Pantelides ST, Choi R, Bersuker G, Feldman LC. Radiation induced charge trapping in ultrathin HfO 2-based MOSFETs Ieee Transactions On Nuclear Science. 54: 1883-1890. DOI: 10.1109/Tns.2007.911423 |
0.537 |
|
| 2007 |
Akarvardar K, Schrimpf RD, Fleetwood DM, Cristoloveanu S, Gentil P, Blalock BJ. Evidence of Radiation-Induced Dopant Neutralization in Partially-Depleted SOI NMOSFETs Ieee Transactions On Nuclear Science. 54: 1920-1924. DOI: 10.1109/Tns.2007.910874 |
0.464 |
|
| 2007 |
Chen DK, Mamouni FE, Zhou XJ, Schrimpf RD, Fleetwood DM, Galloway KF, Lee S, Seo H, Lucovsky G, Jun B, Cressler JD. Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors Ieee Transactions On Nuclear Science. 54: 1931-1937. DOI: 10.1109/Tns.2007.910862 |
0.467 |
|
| 2007 |
Beck MJ, Hatcher R, Schrimpf RD, Fleetwood DM, Pantelides ST. Quantum mechanical description of displacement damage formation Ieee Transactions On Nuclear Science. 54: 1906-1912. DOI: 10.1109/Tns.2007.910231 |
0.306 |
|
| 2007 |
Jun B, Sutton AK, Diestelhorst RM, Duperon GJ, Cressler JD, Black JD, Haeffner T, Reed RA, Alles ML, Schrimpf RD, Fleetwood DM, Marshall PW. The application of RHBD to n-MOSFETs intended for use in cryogenic-temperature radiation environments Ieee Transactions On Nuclear Science. 54: 2100-2105. DOI: 10.1109/Tns.2007.910123 |
0.49 |
|
| 2007 |
Cheng P, Jun B, Sutton A, Appaswamy A, Zhu C, Cressler JD, Schrimpf RD, Fleetwood DM. Understanding radiation- and hot carrier-induced damage processes in SiGe HBTs using mixed-mode electrical stress Ieee Transactions On Nuclear Science. 54: 1938-1945. DOI: 10.1109/Tns.2007.909985 |
0.413 |
|
| 2007 |
Bellini M, Jun B, Sutton AK, Appaswamy AC, Cheng P, Cressler JD, Marshall PW, Schrimpf RD, Fleetwood DM, El-Kareh B, Balster S, Steinmann P, Yasuda H. The effects of proton and X-ray irradiation on the DC and AC performance of complementary (npn + pnp) SiGe HBTs on thick-film SOI Ieee Transactions On Nuclear Science. 54: 2245-2250. DOI: 10.1109/Tns.2007.909022 |
0.367 |
|
| 2007 |
Caussanel M, Canals A, Dixit SK, Beck MJ, Touboul AD, Schrimpf RD, Fleetwood DM, Pantelides ST. Doping-type dependence of damage in silicon diodes exposed to X-ray, proton, and He+ irradiations Ieee Transactions On Nuclear Science. 54: 1925-1930. DOI: 10.1109/Tns.2007.909021 |
0.391 |
|
| 2007 |
Madan A, Jun B, Diestelhorst RM, Appaswamy A, Cressler JD, Schrimpf RD, Fleetwood DM, Marshall PW, Isaacs-Smith T, Williams JR, Koester SJ. The radiation tolerance of strained Si/SiGe n-MODFETs Ieee Transactions On Nuclear Science. 54: 2251-2256. DOI: 10.1109/Tns.2007.907871 |
0.452 |
|
| 2007 |
Diestelhorst RM, Finn S, Jun B, Sutton AK, Cheng P, Marshall PW, Cressler JD, Schrimpf RD, Fleetwood DM, Gustat H, Heinemann B, Fischer GG, Knoll D, Tillack B. The Effects of X-Ray and Proton Irradiation on a 200 GHz/90 GHz Complementary $(npn + pnp)$ SiGe:C HBT Technology Ieee Transactions On Nuclear Science. 54: 2190-2195. DOI: 10.1109/Tns.2007.907869 |
0.392 |
|
| 2007 |
Schwank JR, Sexton FW, Shaneyfelt MR, Fleetwood DM. Total Ionizing Dose Hardness Assurance Issues for High Dose Rate Environments Ieee Transactions On Nuclear Science. 54: 1042-1048. DOI: 10.1109/Tns.2007.893000 |
0.406 |
|
| 2007 |
Chen DK, Schrimpf RD, Fleetwood DM, Galloway KF, Pantelides ST, Dimoulas A, Mavrou G, Sotiropoulos A, Panayiotatos Y. Total dose response of Ge MOS capacitors with HfO2/Dy 2O3 gate stacks Ieee Transactions On Nuclear Science. 54: 971-974. DOI: 10.1109/Tns.2007.892116 |
0.559 |
|
| 2007 |
Tsetseris L, Zhou XJ, Fleetwood DM, Schrimpf RD, Pantelides ST. Hydrogen-related instabilities in MOS devices under bias temperature stress Ieee Transactions On Device and Materials Reliability. 7: 502-508. DOI: 10.1109/Tdmr.2007.910438 |
0.395 |
|
| 2007 |
Marinopoulos AG, Batyrev I, Zhou XJ, Schrimpf RD, Fleetwood DM, Pantelides ST. Hydrogen shuttling near Hf-defect complexes in Si∕SiO2∕HfO2 structures Applied Physics Letters. 91: 233503. DOI: 10.1063/1.2820380 |
0.365 |
|
| 2007 |
Zhou XJ, Fleetwood DM, Danciu I, Dasgupta A, Francis SA, Touboul AD. Effects of aging on the 1f noise of metal-oxide-semiconductor field effect transistors Applied Physics Letters. 91. DOI: 10.1063/1.2800380 |
0.416 |
|
| 2007 |
Xiong HD, Wang W, Li Q, Richter CA, Suehle JS, Hong WK, Lee T, Fleetwood DM. Random telegraph signals in n -type ZnO nanowire field effect transistors at low temperature Applied Physics Letters. 91. DOI: 10.1063/1.2761254 |
0.401 |
|
| 2007 |
Pantelides ST, Tsetseris L, Rashkeev S, Zhou X, Fleetwood D, Schrimpf R. Hydrogen in MOSFETs – A primary agent of reliability issues Microelectronics Reliability. 47: 903-911. DOI: 10.1016/J.Microrel.2006.10.011 |
0.345 |
|
| 2007 |
Fleetwood D, Rodgers M, Tsetseris L, Zhou X, Batyrev I, Wang S, Schrimpf R, Pantelides S. Effects of device aging on microelectronics radiation response and reliability Microelectronics Reliability. 47: 1075-1085. DOI: 10.1016/J.Microrel.2006.06.009 |
0.468 |
|
| 2007 |
Tolk NH, Alles ML, Pasternak R, Lu X, Schrimpf RD, Fleetwood DM, Dolan RP, Standley RW. Oxide interface studies using second harmonic generation Microelectronic Engineering. 84: 2089-2092. DOI: 10.1016/J.Mee.2007.04.101 |
0.361 |
|
| 2007 |
Tsetseris L, Fleetwood D, Schrimpf R, Zhou X, Batyrev I, Pantelides S. Hydrogen effects in MOS devices Microelectronic Engineering. 84: 2344-2349. DOI: 10.1016/J.Mee.2007.04.076 |
0.424 |
|
| 2006 |
Pantelides ST, Wang S, Franceschetti A, Buczko R, Ventra MD, Rashkeev SN, Tsetseris L, Evans MH, Batyrev IG, Feldman LC, Dhar S, McDonald K, Weller RA, Schrimpf RD, Fleetwood DM, et al. Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances Materials Science Forum. 935-948. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.935 |
0.397 |
|
| 2006 |
Jun B, Diestelhorst RM, Bellini M, Espinel G, Appaswamy A, Prakash AFG, Cressler JD, Chen D, Schrimpf RD, Fleetwood DM, Turowski M, Raman A. Temperature-dependence of off-state drain leakage in X-ray irradiated 130 nm CMOS devices Ieee Transactions On Nuclear Science. 53: 3203-3209. DOI: 10.1109/Tns.2006.886230 |
0.51 |
|
| 2006 |
Lucovsky G, Fleetwood DM, Lee S, Seo H, Schrimpf RD, Felix JA, Lüning J, Fleming LB, Ulrich M, Aspnes DE. Differences between charge trapping states in irradiated nano-crystalline HfO2 and non-crystalline Hf silicates Ieee Transactions On Nuclear Science. 53: 3644-3648. DOI: 10.1109/Tns.2006.886211 |
0.761 |
|
| 2006 |
Bellini M, Jun B, Chen T, Cressler JD, Marshall PW, Chen D, Schrimpf RD, Fleetwood DM, Cai J. X-Ray Irradiation and Bias Effects in Fully-Depleted and Partially-Depleted SiGe HBTs Fabricated on CMOS-Compatible SOI Ieee Transactions On Nuclear Science. 53: 3182-3186. DOI: 10.1109/Tns.2006.885795 |
0.456 |
|
| 2006 |
Beck MJ, Tsetseris L, Caussanel M, Schrimpf RD, Fleetwood DM, Pantelides ST. Atomic-scale mechanisms for low-NIEL dopant-type dependent damage in Si Ieee Transactions On Nuclear Science. 53: 3621-3628. DOI: 10.1109/Tns.2006.885383 |
0.377 |
|
| 2006 |
Sutton AK, Prakash APG, Jun B, Zhao E, Bellini M, Pellish J, Diestelhorst RM, Carts MA, Phan A, Ladbury R, Cressler JD, Marshall PW, Marshall CJ, Reed RA, Schrimpf RD, ... Fleetwood DM, et al. An Investigation of Dose Rate and Source Dependent Effects in 200 GHz SiGe HBTs Ieee Transactions On Nuclear Science. 53: 3166-3174. DOI: 10.1109/Tns.2006.885382 |
0.478 |
|
| 2006 |
Ramachandran V, Narasimham B, Fleetwood DM, Schrimpf RD, Holman WT, Witulski AF, Pease RL, Dunham GW, Seiler JE, Platteter DG. Modeling total-dose effects for a low-dropout voltage regulator Ieee Transactions On Nuclear Science. 53: 3223-3231. DOI: 10.1109/Tns.2006.885377 |
0.438 |
|
| 2006 |
Chen XJ, Barnaby HJ, Schrimpf RD, Fleetwood DM, Pease RL, Platteter DG, Dunham GW. Nature of interface defect buildup in gated bipolar devices under low dose rate irradiation Ieee Transactions On Nuclear Science. 53: 3649-3654. DOI: 10.1109/Tns.2006.885375 |
0.541 |
|
| 2006 |
Dixit SK, Dhar S, Rozen J, Wang S, Schrimpf RD, Fleetwood DM, Pantelides ST, Williams JR, Feldman LC. Total dose radiation response of nitrided and non-nitrided SiO 2/4H-SiC MOS capacitors Ieee Transactions On Nuclear Science. 53: 3687-3692. DOI: 10.1109/Tns.2006.885164 |
0.536 |
|
| 2006 |
Batyrev IG, Rodgers MP, Fleetwood DM, Schrimpf RD, Pantelides ST. Effects of water on the aging and radiation response of MOS devices Ieee Transactions On Nuclear Science. 53: 3629-3635. DOI: 10.1109/Tns.2006.884787 |
0.46 |
|
| 2006 |
Zhou XJ, Fleetwood DM, Tsetseris L, Schrimpf RD, Pantelides ST. Effects of switched-bias annealing on charge trapping in HfO2 gate dielectrics Ieee Transactions On Nuclear Science. 53: 3636-3643. DOI: 10.1109/Tns.2006.884249 |
0.543 |
|
| 2006 |
White YV, Lu X, Pasternak R, Tolk NH, Chatterjee A, Schrimpf RD, Fleetwood DM, Ueda A, Mu R. Studies of charge carrier trapping and recombination processes in Si/SiO 2/MgO structures using second-harmonic generation Applied Physics Letters. 88. DOI: 10.1063/1.2172008 |
0.373 |
|
| 2005 |
Rodgers MP, Fleetwood DM, Schrimpf RD, Batyrev IG, Wang S, Pantelides ST. The effects of aging on MOS irradiation and annealing response Ieee Transactions On Nuclear Science. 52: 2642-2648. DOI: 10.1109/Tns.2005.861079 |
0.509 |
|
| 2005 |
Tsetseris L, Schrimpf RD, Fleetwood DM, Pease RL, Pantelides ST. Common origin for enhanced low-dose-rate sensitivity and bias temperature instability under negative bias Ieee Transactions On Nuclear Science. 52: 2265-2271. DOI: 10.1109/Tns.2005.860670 |
0.5 |
|
| 2005 |
Karmarkar AP, White BD, Buttari D, Fleetwood DM, Schrimpf RD, Weller RA, Brillson LJ, Mishra UK. Proton-induced damage in gallium nitride-based schottky diodes Ieee Transactions On Nuclear Science. 52: 2239-2244. DOI: 10.1109/Tns.2005.860668 |
0.469 |
|
| 2005 |
Zhou XJ, Fleetwood DM, Felix JA, Gusev EP, D'Emic C. Bias-temperature instabilities and radiation effects in MOS devices Ieee Transactions On Nuclear Science. 52: 2231-2238. DOI: 10.1109/Tns.2005.860667 |
0.784 |
|
| 2005 |
Cizmarik RR, Schrimpf RD, Fleetwood DM, Galloway KF, Platteter DG, Shaneyfelt MR, Pease RL, Boch J, Ball DR, Rowe JD, Maher MC. The impact of mechanical stress on the total-dose response of linear bipolar transistors with various passivation layers Ieee Transactions On Nuclear Science. 52: 1513-1517. DOI: 10.1109/Tns.2005.855815 |
0.424 |
|
| 2005 |
Tsetseris L, Zhou XJ, Fleetwood DM, Schrimpf RD, Pantelides ST. Physical mechanisms of negative-bias temperature instability Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1897075 |
0.358 |
|
| 2004 |
Rashkeev SN, Fleetwood DM, Schrimpf RD, Pantelides ST. Hydrogen at the Si/SiO2 interface: From atomic-scale calculations to engineering models International Journal of High Speed Electronics and Systems. 14: 575-580. DOI: 10.1142/S0129156404002521 |
0.491 |
|
| 2004 |
Weller RA, Mendenhall MH, Fleetwood DM. A screened Coulomb scattering module for displacement damage computations in Geant4 Ieee Transactions On Nuclear Science. 51: 3669-3678. DOI: 10.1109/Tns.2004.839643 |
0.353 |
|
| 2004 |
Stacey JW, Schrimpf RD, Fleetwood DM, Holmes KC. Using surface charge analysis to characterize the radiation response of Si/SiO2 structures Ieee Transactions On Nuclear Science. 51: 3686-3691. DOI: 10.1109/Tns.2004.839259 |
0.494 |
|
| 2004 |
Jun B, Xiong HD, Sternberg AL, Cirba CR, Chen D, Schrimpf RD, Fleetwood DM, Schwank JR, Cristoloveanu S. Total dose effects on double gate fully depleted SOI MOSFETs Ieee Transactions On Nuclear Science. 51: 3767-3772. DOI: 10.1109/Tns.2004.839256 |
0.44 |
|
| 2004 |
Felix JA, Shaneyfelt MR, Fleetwood DM, Schwank JR, Dodd PE, Gusev EP, Fleming RM, D'Emic C. Charge trapping and annealing in high-/spl kappa/ gate dielectrics Ieee Transactions On Nuclear Science. 51: 3143-3149. DOI: 10.1109/Tns.2004.839204 |
0.469 |
|
| 2004 |
Rashkeev SN, Fleetwood DM, Schrimpf RD, Pantelides ST. Effects of hydrogen motion on interface trap formation and annealing Ieee Transactions On Nuclear Science. 51: 3158-3165. DOI: 10.1109/Tns.2004.839202 |
0.405 |
|
| 2004 |
Shaneyfelt MR, Pease RL, Schwank JR, Felix JA, Maher MC, Fleetwood DM, Dodd PE. Annealing behavior of linear bipolar devices with enhanced low-dose-rate sensitivity Ieee Transactions On Nuclear Science. 51: 3172-3177. DOI: 10.1109/Tns.2004.839200 |
0.788 |
|
| 2004 |
Karmarkar AP, Jun B, Fleetwood DM, Schrimpf RD, Weller RA, White BD, Brillson LJ, Mishra UK. Proton irradiation effects on GaN-based high electron-mobility transistors with Si-doped AlxGa1-xN and thick GaN Cap layers Ieee Transactions On Nuclear Science. 51: 3801-3806. DOI: 10.1109/Tns.2004.839199 |
0.486 |
|
| 2004 |
Ducret S, Saigne F, Boch J, Schrimpf RD, Fleetwood DM, Vaille JR, Dusseau L, David JP, Ecoffet R. Effect of thermal annealing on radiation-induced degradation of bipolar technologies when the dose rate is switched from high to low Ieee Transactions On Nuclear Science. 51: 3219-3224. DOI: 10.1109/Tns.2004.839145 |
0.463 |
|
| 2004 |
Boch J, Saigne F, Ducret S, Schrimpf RD, Fleetwood DM, Iacconi P, Dusseau L. Total dose effects on bipolar integrated circuits: characterization of the saturation region Ieee Transactions On Nuclear Science. 51: 3225-3230. DOI: 10.1109/Tns.2004.839143 |
0.379 |
|
| 2004 |
Jun B, Schrimpf RD, Fleetwood DM, White YV, Pasternak R, Rashkeev SN, Brunier F, Bresson N, Fouillat M, Cristoloveanu S, Tolk NH. Charge trapping in irradiated SOI wafers measured by second harmonic generation Ieee Transactions On Nuclear Science. 51: 3231-3237. DOI: 10.1109/Tns.2004.839140 |
0.436 |
|
| 2004 |
Xiong HD, Jun B, Fleetwood DM, Schrimpf RD, Schwank JR. Charge trapping and low frequency noise in SOI buried oxides Ieee Transactions On Nuclear Science. 51: 3238-3242. DOI: 10.1109/Tns.2004.839139 |
0.437 |
|
| 2004 |
Hu X, Choi BK, Barnaby HJ, Fleetwood DM, Schrimpf RD, Lee S, Shojah-Ardalan S, Wilkins R, Mishra UK, Dettmer RW. The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors Ieee Transactions On Nuclear Science. 51: 293-297. DOI: 10.1109/Tns.2004.825077 |
0.401 |
|
| 2004 |
Tsetseris L, Zhou XJ, Fleetwood DM, Schrimpf RD, Pantelides ST. Dual role of fluorine at the Si-Si O2 interface Applied Physics Letters. 85: 4950-4952. DOI: 10.1063/1.1825621 |
0.358 |
|
| 2004 |
Jun B, White YV, Schrimpf RD, Fleetwood DM, Brunier F, Bresson N, Cristoloveanu S, Tolk NH. Characterization of multiple Si/SiO 2 interfaces in silicon-on-insulator materials via second-harmonic generation Applied Physics Letters. 85: 3095-3097. DOI: 10.1063/1.1807011 |
0.404 |
|
| 2004 |
Zhou XJ, Tsetseris L, Rashkeev SN, Fleetwood DM, Schrimpf RD, Pantelides ST, Felix JA, Gusev EP, D’Emic C. Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics Applied Physics Letters. 84: 4394-4396. DOI: 10.1063/1.1757636 |
0.778 |
|
| 2004 |
Felix JA, Schwank JR, Fleetwood DM, Shaneyfelt MR, Gusev EP. Effects of radiation and charge trapping on the reliability of high-κ gate dielectrics Microelectronics Reliability. 44: 563-575. DOI: 10.1016/J.Microrel.2003.12.005 |
0.796 |
|
| 2004 |
Schwank JR, Fleetwood DM, Xiong HD, Shaneyfelt MR, Draper BL. Generation of metastable electron traps in the near interfacial region of SOI buried Oxides by ion implantation and their effect on device properties Microelectronic Engineering. 72: 362-366. DOI: 10.1016/J.Mee.2004.01.032 |
0.489 |
|
| 2004 |
Felix JA, Schwank JR, Cirba CR, Schrimpf RD, Shaneyfelt MR, Fleetwood DM, Dodd PE. Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs Microelectronic Engineering. 72: 332-341. DOI: 10.1016/J.Mee.2004.01.013 |
0.81 |
|
| 2004 |
Felix JA, Xiong HD, Fleetwood DM, Gusev EP, Schrimpf RD, Sternberg AL, D'Emic C. Interface trapping properties of nMOSFETs with Al2O 3/SiOxNy/Si(1 0 0) gate dielectric stacks after exposure to ionizing radiation Microelectronic Engineering. 72: 50-54. DOI: 10.1016/J.Mee.2003.12.015 |
0.789 |
|
| 2004 |
Choi BK, Kang WP, Davidson JL, Howell M, Schrimpf RD, Fleetwood DM. CVD diamond photoconductive devices Diamond and Related Materials. 13: 785-790. DOI: 10.1016/J.Diamond.2003.12.008 |
0.329 |
|
| 2003 |
Tsetseris L, Zhou X, Fleetwood DM, Schrimpf RD, Pantelides ST. Field-induced reactions of water molecules at Si-dielectric interfaces Materials Research Society Symposium - Proceedings. 786: 171-176. DOI: 10.1557/Proc-786-E3.3 |
0.354 |
|
| 2003 |
White BD, Bataiev M, Goss SH, Hu X, Karmarkar A, Fleetwood DM, Schrimpf RD, Schaff WJ, Brillson LJ. Electrical, Spectral, and Chemical Properties of 1.8 MeV Proton Irradiated AlGaN/GaN HEMT Structures as a Function of Proton Fluence Ieee Transactions On Nuclear Science. 50: 1934-1941. DOI: 10.1109/Tns.2003.821827 |
0.336 |
|
| 2003 |
Weller RA, Sternberg AL, Massengill LW, Schrimpf RD, Fleetwood DM. Evaluating Average and Atypical Response in Radiation Effects Simulations Ieee Transactions On Nuclear Science. 50: 2265-2271. DOI: 10.1109/Tns.2003.821576 |
0.384 |
|
| 2003 |
Pasternak R, Chatterjee A, Shirokaya YV, Choi BK, Marka Z, Miller JK, Albridge RG, Rashkeev SN, Pantelides ST, Schrimpf RD, Fleetwood DM, Tolk NH. Contactless Ultra-Fast Laser Probing of Radiation-Induced Leakage Current in Ultra-Thin Oxides Ieee Transactions On Nuclear Science. 50: 1929-1933. DOI: 10.1109/Tns.2003.821387 |
0.437 |
|
| 2003 |
Jun B, Fleetwood DM, Schrimpf RD, Zhou X, Montes EJ, Cristoloveanu S. Charge separation techniques for irradiated pseudo-MOS SOI transistors Ieee Transactions On Nuclear Science. 50: 1891-1895. DOI: 10.1109/Tns.2003.821380 |
0.506 |
|
| 2003 |
Hu X, Karmarkar AP, Jun B, Fleetwood DM, Schrimpf RD, Geil RD, Weller RA, White BD, Bataiev M, Brillson LJ, Mishra UK. Proton-Irradiation Effects on AlGaN/AlN/GaN High Electron Mobility Transistors Ieee Transactions On Nuclear Science. 50: 1791-1796. DOI: 10.1109/Tns.2003.820792 |
0.457 |
|
| 2003 |
Boch J, Fleetwood DM, Schrimpf RD, Cizmarik RR, Saigné F. Impact of Mechanical Stress on Total-Dose Effects in Bipolar ICs Ieee Transactions On Nuclear Science. 50: 2335-2340. DOI: 10.1109/Tns.2003.820768 |
0.339 |
|
| 2003 |
Felix JA, Shaneyfelt MR, Fleetwood DM, Meisenheimer TL, Schwank JR, Schrimpf RD, Dodd PE, Gusev EP, D'Emic C. Radiation-induced charge trapping in thin Al/sub 2/O/sub 3//SiO/sub x/N/sub y//Si(100) gate dielectric stacks Ieee Transactions On Nuclear Science. 50: 1910-1918. DOI: 10.1109/Tns.2003.820763 |
0.771 |
|
| 2003 |
Rashkeev SN, Fleetwood DM, Schrimpf RD, Pantelides ST. Statistical Modeling of Radiation-Induced Proton Transport in Silicon: Deactivation of Dopant Acceptors in Bipolar Devices Ieee Transactions On Nuclear Science. 50: 1896-1900. DOI: 10.1109/Tns.2003.820751 |
0.477 |
|
| 2003 |
Fleetwood DM, Eisen HA. Total-dose radiation hardness assurance Ieee Transactions On Nuclear Science. 50: 552-564. DOI: 10.1109/Tns.2003.813130 |
0.442 |
|
| 2003 |
Xiong HD, Fleetwood DM, Felix JA, Gusev EP, D’Emic C. Low-frequency noise and radiation response of metal-oxide-semiconductor transistors with Al2O3/SiOxNy/Si(100) gate stacks Applied Physics Letters. 83: 5232-5234. DOI: 10.1063/1.1635071 |
0.782 |
|
| 2003 |
Rashkeev SN, Fleetwood DM, Schrimpf RD, Pantelides ST. Radiation-induced acceptor deactivation in bipolar devices: Effects of electric field Applied Physics Letters. 83: 4646-4648. DOI: 10.1063/1.1630368 |
0.485 |
|
| 2003 |
Marka Z, Pasternak R, Albridge RG, Rashkeev SN, Pantelides ST, Tolk NH, Choi BK, Fleetwood DM, Schrimpf RD. Two-color optical technique for characterization of x-ray radiation-enhanced electron transport in SiO2 Journal of Applied Physics. 93: 1865-1870. DOI: 10.1063/1.1534904 |
0.361 |
|
| 2003 |
Raparla VAK, Lee SC, Schrimpf RD, Fleetwood DM, Galloway KF. A model of radiation effects in nitride-oxide films for power MOSFET applications Solid-State Electronics. 47: 775-783. DOI: 10.1016/S0038-1101(02)00375-1 |
0.509 |
|
| 2003 |
Pasternak R, Shirokaya YV, Marka Z, Miller JK, Rashkeev SN, Pantelides ST, Tolk NH, Choi BK, Schrimpf RD, Fleetwood DM. Laser detection of radiation enhanced electron transport in ultra-thin oxides Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 514: 150-155. DOI: 10.1016/J.Nima.2003.08.098 |
0.393 |
|
| 2003 |
Jiang Y, Pasternak R, Marka Z, Shirokaya YV, Miller JK, Rashkeev SN, Glinka YD, Perakis IE, Roy PK, Kozub J, Choi BK, Fleetwood DM, Schrimpf RD, Liu X, Sasaki Y, et al. Spin/carrier dynamics at semiconductor interfaces using intense, tunable, ultra-fast lasers Physica Status Solidi (B) Basic Research. 240: 490-499. DOI: 10.1002/Pssb.200303861 |
0.332 |
|
| 2002 |
Lu ZY, Nicklaw CJ, Fleetwood DM, Schrimpf RD, Pantelides ST. Structure, properties, and dynamics of oxygen vacancies in amorphous SiO2. Physical Review Letters. 89: 285505. PMID 12513159 DOI: 10.1103/Physrevlett.89.285505 |
0.369 |
|
| 2002 |
White BD, Bataiev M, Brillson LJ, Choi BK, Fleetwood DM, Schrimpf RD, Pantelides ST, Dettmer RW, Schaff WJ, Champlain JG, Mishra UK. Characterization of 1.8-MeV proton-irradiated AlGaN/GaN field-effect transistor structures by nanoscale depth-resolved luminescence spectroscopy Ieee Transactions On Nuclear Science. 49: 2695-2701. DOI: 10.1109/Tns.2002.805427 |
0.411 |
|
| 2002 |
Barnaby HJ, Smith SK, Schrimpf RD, Fleetwood DM, Pease RL. Analytical model for proton radiation effects in bipolar devices Ieee Transactions On Nuclear Science. 49: 2643-2649. DOI: 10.1109/Tns.2002.805410 |
0.46 |
|
| 2002 |
Nicklaw CJ, Lu ZY, Fleetwood DM, Schrimpf RD, Pantelides ST. The structure, properties, and dynamics of oxygen vacancies in amorphous SiO2 Ieee Transactions On Nuclear Science. 49: 2667-2673. DOI: 10.1109/Tns.2002.805408 |
0.342 |
|
| 2002 |
Fleetwood DM, Xiong HD, Lu Z-, Nicklaw CJ, Felix JA, Schrimpf RD, Pantelides ST. Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices Ieee Transactions On Nuclear Science. 49: 2674-2683. DOI: 10.1109/Tns.2002.805407 |
0.769 |
|
| 2002 |
Hu X, Choi BK, Barnaby HJ, Fleetwood DM, Schrimpf RD, Galloway KF, Weller RA, McDonald K, Mishra UK, Dettmer RW. Proton-induced degradation in AlGaAs/GaAs heterojunction bipolar transistors Ieee Transactions On Nuclear Science. 49: 3213-3216. DOI: 10.1109/Tns.2002.805399 |
0.445 |
|
| 2002 |
Felix JA, Fleetwood DM, Schrimpf RD, Hong JG, Lucovsky G, Schwank JR, Shaneyfelt MR. Total-dose radiation response of hafnium-silicate capacitors Ieee Transactions On Nuclear Science. 49: 3191-3196. DOI: 10.1109/Tns.2002.805392 |
0.811 |
|
| 2002 |
Choi BK, Fleetwood DM, Schrimpf RD, Massengill LW, Galloway KF, Shaneyfelt MR, Meisenheimer TL, Dodd PE, Schwank JR, Lee YM, John RS, Lucovsky G. Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation Ieee Transactions On Nuclear Science. 49: 3045-3050. DOI: 10.1109/Tns.2002.805389 |
0.393 |
|
| 2002 |
Rashkeev S, Cirba C, Fleetwood D, Schrimpf R, Witczak S, Michez A, Pantelides S. Physical model for enhanced interface-trap formation at low dose rates Ieee Transactions On Nuclear Science. 49: 2650-2655. DOI: 10.1109/Tns.2002.805387 |
0.475 |
|
| 2002 |
Shaneyfelt MR, Pease RL, Schwank JR, Maher MC, Hash GL, Fleetwood DM, Dodd PE, Reber CA, Witczak SC, Riewe LC, Hjalmarson HP, Banks JC, Doyle BL, Knapp JA. Impact of passivation layers on enhanced low-dose-rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar linear ICs Ieee Transactions On Nuclear Science. 49: 3171-3179. DOI: 10.1109/Tns.2002.805365 |
0.395 |
|
| 2002 |
Xiong HD, Fleetwood DM, Choi BK, Sternberg AL. Temperature dependence and irradiation response of 1/f-noise in MOSFETs Ieee Transactions On Nuclear Science. 49: 2718-2723. DOI: 10.1109/Tns.2002.805354 |
0.413 |
|
| 2002 |
White BD, Brillson LJ, Bataiev M, Fleetwood DM, Schrimpf RD, Choi BK, Pantelides ST. Detection of trap activation by ionizing radiation in SiO 2 by spatially localized cathodoluminescence spectroscopy Journal of Applied Physics. 92: 5729-5734. DOI: 10.1063/1.1512319 |
0.443 |
|
| 2002 |
Rashkeev SN, Fleetwood DM, Schrimpf RD, Pantelides ST. Dual behavior of H+ at Si-SiO2 interfaces: Mobility versus trapping Applied Physics Letters. 81: 1839-1841. DOI: 10.1063/1.1504879 |
0.364 |
|
| 2002 |
Choi B, Fleetwood D, Massengill L, Schrimpf R, Galloway K, Shaneyfelt M, Meisenheimer T, Dodd P, Schwank J, Lee Y, Johnson R, Lucovsky G. Reliability degradation of ultra-thin oxynitride and Al2O3 gate dielectric films owing to heavy-ion irradiation Electronics Letters. 38: 157. DOI: 10.1049/El:20020119 |
0.323 |
|
| 2002 |
Fleetwood DM. Effects of hydrogen transport and reactions on microelectronics radiation response and reliability Microelectronics Reliability. 42: 523-541. DOI: 10.1016/S0026-2714(02)00019-7 |
0.491 |
|
| 2001 |
Rashkeev SN, Fleetwood DM, Schrimpf RD, Pantelides ST. Defect generation by hydrogen at the Si- SiO(2) interface. Physical Review Letters. 87: 165506. PMID 11690213 DOI: 10.1103/Physrevlett.87.165506 |
0.347 |
|
| 2001 |
Karmarkar AP, Choi BK, Schrimpf RD, Fleetwood DM. Aging and baking effects on the radiation hardness of MOS capacitors Ieee Transactions On Nuclear Science. 48: 2158-2163. DOI: 10.1109/23.983189 |
0.459 |
|
| 2001 |
Felix JA, Fleetwood DM, Riewe LC, Shaneyfelt MR, Winokur PS. Bias and frequency dependence of radiation-induced-charge trapping in MOS devices Ieee Transactions On Nuclear Science. 48: 2114-2120. DOI: 10.1109/23.983181 |
0.779 |
|
| 2001 |
Rashkeev SN, Fleetwood DM, Schrimpf RD, Pantelides ST. Proton-induced defect generation at the Si-SiO 2 interface Ieee Transactions On Nuclear Science. 48: 2086-2092. DOI: 10.1109/23.983177 |
0.366 |
|
| 2001 |
Massengill L, Choi B, Fleetwood D, Schrimpf R, Galloway K, Shaneyfelt M, Meisenheimer T, Dodd P, Schwank J, Lee Y, Johnson R, Lucovsky G. Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics Ieee Transactions On Nuclear Science. 48: 1904-1912. DOI: 10.1109/23.983149 |
0.404 |
|
| 2001 |
Schwank JR, Shaneyfelt MR, Meisenheimer TL, Draper BL, Vanhesden K, Fleetwood DM. Silicon-on-insulator non-volatile field-effect transistor memory Microelectronic Engineering. 59: 253-258. DOI: 10.1016/S0167-9317(01)00636-0 |
0.413 |
|
| 2000 |
Shaneyfelt MR, Schwank JR, Witczak SC, Fleetwood DM, Pease RL, Winokur PS, Riewe LC, Hash GL. Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs Ieee Transactions On Nuclear Science. 47: 2539-2545. DOI: 10.1109/23.903805 |
0.41 |
|
| 2000 |
Barnaby HJ, Cirba CR, Schrimpf RD, Fleetwood DM, Pease RL, Shaneyfelt MR, Turflinger T, Krieg JF, Maher MC. Origins of total-dose response variability in linear bipolar microcircuits Ieee Transactions On Nuclear Science. 47: 2342-2349. DOI: 10.1109/23.903775 |
0.491 |
|
| 2000 |
Fleetwood DM, Riewe LC, Winokur PS, Sexton FW. Dielectric breakdown of thin oxides during ramped current-temperature stress Ieee Transactions On Nuclear Science. 47: 2305-2310. DOI: 10.1109/23.903769 |
0.461 |
|
| 2000 |
Lee S, Raparla A, Li YF, Gasiot G, Schrimpf RD, Fleetwood DM, Galloway KF, Featherby M, Johnson D. Total dose effects in composite nitride-oxide films Ieee Transactions On Nuclear Science. 47: 2297-2304. DOI: 10.1109/23.903768 |
0.367 |
|
| 2000 |
Bunson P, Di Ventra M, Pantelides S, Fleetwood D, Schrimpf R. Hydrogen-related defects in irradiated SiO/sub 2/ Ieee Transactions On Nuclear Science. 47: 2289-2296. DOI: 10.1109/23.903767 |
0.367 |
|
| 2000 |
White BD, Brillson LJ, Lee SC, Fleetwood DM, Schrimpf RD, Pantelides ST, Lee Y-, Lucovsky G. Low energy electron-excited nanoscale luminescence: a tool to detect trap activation by ionizing radiation Ieee Transactions On Nuclear Science. 47: 2276-2280. DOI: 10.1109/23.903765 |
0.471 |
|
| 2000 |
Nicklaw CJ, Pagey MP, Pantelides ST, Fleetwood DM, Schrimpf RD, Galloway KF, Wittig JE, Howard BM, Taw E, McNeil WH, Conley JF. Defects and nanocrystals generated by Si implantation into a-SiO/sub 2/ Ieee Transactions On Nuclear Science. 47: 2269-2275. DOI: 10.1109/23.903764 |
0.399 |
|
| 2000 |
Pantelides ST, Rashkeev SN, Buczko R, Fleetwood DM, Schrimpf RD. Reactions of hydrogen with Si-SiO 2 interfaces Ieee Transactions On Nuclear Science. 47: 2262-2268. DOI: 10.1109/23.903763 |
0.444 |
|
| 2000 |
Marka Z, Singh SK, Wang W, Lee SC, Kavich J, Glebov B, Rashkeev SN, Karmarkar AP, Albridge RG, Pantelides ST, Schrimpf RD, Fleetwood DM, Tolk NH. Characterization of X-ray radiation damage in Si/SiO2 structures using second-harmonic generation Ieee Transactions On Nuclear Science. 47: 2256-2261. DOI: 10.1109/23.903762 |
0.442 |
|
| 2000 |
Schwank JR, Shaneyfelt MR, Dodd PE, Ferlet-Cavrois V, Loemker RA, Winokur PS, Fleetwood DM, Paillet P, Leray J-, Draper BL, Witczak SC, Riewe LC. Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides Ieee Transactions On Nuclear Science. 47: 2175-2182. DOI: 10.1109/23.903750 |
0.435 |
|
| 2000 |
Scofield JH, Borland N, Fleetwood DM. Temperature-independent switching rates for a random telegraph signal in a silicon metal–oxide–semiconductor field-effect transistor at low temperatures Applied Physics Letters. 76: 3248-3250. DOI: 10.1063/1.126596 |
0.344 |
|
| 2000 |
Fleetwood DM, Winokur PS, Dodd PE. An overview of radiation effects on electronics in the space telecommunications environment Microelectronics Reliability. 40: 17-26. DOI: 10.1016/S0026-2714(99)00225-5 |
0.391 |
|
| 1999 |
Vanheusden K, Korambath P, Kurtz H, Karna S, Fleetwood D, Shedd W, Pugh R. The effect of near-interface network strain on proton trapping in SiO/sub 2/ Ieee Transactions On Nuclear Science. 46: 1562-1567. DOI: 10.1109/23.819121 |
0.404 |
|
| 1999 |
Flament O, Paillet P, Leray JL, Fleetwood DM. Considerations on isochronal anneal technique: From measurement to physics Ieee Transactions On Nuclear Science. 46: 1526-1533. DOI: 10.1109/23.819117 |
0.422 |
|
| 1999 |
Fleetwood DM, Winokur PS, Riewe LC, Flament O, Paillet P, Leray JL. The role of electron transport and trapping in MOS total-dose modeling Ieee Transactions On Nuclear Science. 46: 1519-1525. DOI: 10.1109/23.819116 |
0.454 |
|
| 1999 |
Fleetwood DM, Winokur PS, Flament O, Leray JL. Stability of trapped electrons in SiO 2 Applied Physics Letters. 74: 2969-2971. DOI: 10.1063/1.123982 |
0.474 |
|
| 1999 |
Vanheusden K, Fleetwood DM, Devine RAB, Warren WL. Reactions and diffusion during annealing-induced H + generation in SOI buried oxides Microelectronic Engineering. 48: 363-366. DOI: 10.1016/S0167-9317(99)00406-2 |
0.35 |
|
| 1999 |
Fleetwood DM, Reber RA, Riewe LC, Winokur PS. Thermally stimulated current in SiO2 Microelectronics Reliability. 39: 1323-1336. DOI: 10.1016/S0026-2714(99)00084-0 |
0.458 |
|
| 1999 |
Vanheusden K, Warren WL, Devine RAB, Fleetwood DM, Draper BL, Schwank JR. A non-volatile MOSFET memory device based on mobile protons in SiO2 thin films Journal of Non-Crystalline Solids. 254: 1-10. DOI: 10.1016/S0022-3093(99)00366-X |
0.442 |
|
| 1998 |
Hjalmarson HP, Schultz PA, Bowman DJ, Fleetwood DM. A Unified Computational Approach to Oxide Aging Processes Mrs Proceedings. 538. DOI: 10.1557/Proc-538-257 |
0.39 |
|
| 1998 |
Vanheusden K, Warren WL, Fleetwood DM, Devine RAB, Draper BL, Schwank JR, Shaneyfelt MR, Wlnokur PS. A Nonvolatile MOSFET Memory Device Based on Mobile Protons in the Gate Dielectric Mrs Proceedings. 510: 463. DOI: 10.1557/Proc-510-463 |
0.472 |
|
| 1998 |
Witczak SC, Schrimpf RD, Barnaby HJ, Lacoe RC, Mayer DC, Galloway KF, Pease RL, Fleetwood DM. Moderated degradation enhancement of lateral pnp transistors due to measurement bias Ieee Transactions On Nuclear Science. 45: 2644-2648. DOI: 10.1109/23.736509 |
0.495 |
|
| 1998 |
Sexton FW, Fleetwood DM, Shaneyfelt MR, Dodd PE, Hash GL, Schanwald LP, Loemker RA, Krisch KS, Green ML, Weir BE, Silverman PJ. Precursor ion damage and angular dependence of single event gate rupture in thin oxides Ieee Transactions On Nuclear Science. 45: 2509-2518. DOI: 10.1109/23.736492 |
0.394 |
|
| 1998 |
Vanheusden K, Fleetwood DM, Shaneyfelt MR, Draper BL, Schwank JR. The effects of irradiation and proton implantation on the density of mobile protons in SiO/sub 2/ thin films Ieee Transactions On Nuclear Science. 45: 2391-2397. DOI: 10.1109/23.736459 |
0.47 |
|
| 1998 |
Fleetwood DM, Winokur PS, Shaneyfelt MR, Riewe LC, Flament O, Paillet P, Leray JL. Effects of isochronal annealing and irradiation temperature on radiation-induced trapped charge Ieee Transactions On Nuclear Science. 45: 2366-2374. DOI: 10.1109/23.736456 |
0.459 |
|
| 1998 |
Witczak SC, Lacoe RC, Mayer DC, Fleetwood DM, Schrimpf RD, Galloway KF. Space charge limited degradation of bipolar oxides at low electric fields Ieee Transactions On Nuclear Science. 45: 2339-2351. DOI: 10.1109/23.736453 |
0.543 |
|
| 1998 |
Fleetwood DM, Winokur PS, Riewe LC, Reber RA. Bulk oxide traps and border traps in metal–oxide–semiconductor capacitors Journal of Applied Physics. 84: 6141-6148. DOI: 10.1063/1.368881 |
0.472 |
|
| 1998 |
Vanheusden K, Warren WL, Fleetwood DM, Schwank JR, Shaneyfelt MR, Draper BL, Winokur PS, Devine RAB, Archer LB, Brown GA, Wallace RM. Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films Applied Physics Letters. 73: 674-676. DOI: 10.1063/1.121944 |
0.351 |
|
| 1998 |
Vanheusden K, Karna SP, Pugh RD, Warren WL, Fleetwood DM, Devine RAB, Edwards AH. Thermally activated electron capture by mobile protons in SiO2 thin films Applied Physics Letters. 72: 28-30. DOI: 10.1063/1.121447 |
0.321 |
|
| 1998 |
Barnaby HJ, Schrimpf RD, Fleetwood DM, Kosier SL. Effects of emitter-tied field plates on lateral PNP ionizing radiation response Proceedings of the Ieee Bipolar/Bicmos Circuits and Technology Meeting. 35-38. |
0.309 |
|
| 1997 |
Sexton FW, Fleetwood DM, Shaneyfelt MR, Dodd PE, Hash GL. Single event gate rupture in thin gate oxides Ieee Transactions On Nuclear Science. 44: 2345-2352. DOI: 10.1109/23.659060 |
0.395 |
|
| 1997 |
Vanheusden K, Devine RAB, Schwank JR, Fleetwood DM, Polcawich RG, Warren WL, Karna SP, Pugh RD. Irradiation response of mobile protons in buried SiO/sub 2/ films Ieee Transactions On Nuclear Science. 44: 2087-2094. DOI: 10.1109/23.659021 |
0.529 |
|
| 1997 |
Simons M, Pease RL, Fleetwood DM, Schwank JR, Krzesniak MF. Dose enhancement in a room cobalt-60 source Ieee Transactions On Nuclear Science. 44: 2052-2057. DOI: 10.1109/23.658990 |
0.358 |
|
| 1997 |
Shaneyfelt MR, Winokur PS, Fleetwood DM, Hash GL, Schwank JR, Sexton FW, Pease RL. Impact of aging on radiation hardness[CMOS SRAMs] Ieee Transactions On Nuclear Science. 44: 2040-2047. DOI: 10.1109/23.658987 |
0.38 |
|
| 1997 |
Witczak SC, Schrimpf RD, Fleetwood DM, Galloway KF, Lacoe RC, Mayer DC, Puhl JM, Pease RL, Suehle JS. Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures Ieee Transactions On Nuclear Science. 44: 1989-2000. DOI: 10.1109/23.658978 |
0.47 |
|
| 1997 |
Pease RL, Cohn LM, Fleetwood DM, Gehlhausen MA, Turflinger TL, Brown DB, Johnston AH. A proposed hardness assurance test methodology for bipolar linear circuits and devices in a space ionizing radiation environment Ieee Transactions On Nuclear Science. 44: 1981-1988. DOI: 10.1109/23.658976 |
0.368 |
|
| 1997 |
Wu A, Schrimpf RD, Barnaby HJ, Fleetwood DM, Pease RL, Rosier SL. Radiation-induced gain degradation in lateral pnp b jts with lightly and heavily doped emitters Ieee Transactions On Nuclear Science. 44: 1914-1921. DOI: 10.1109/23.658962 |
0.482 |
|
| 1997 |
Fleetwood DM. Revised model of thermally stimulated current in MOS capacitors Ieee Transactions On Nuclear Science. 44: 1826-1833. DOI: 10.1109/23.658949 |
0.427 |
|
| 1997 |
Fleetwood DM, Johnson MJ, Meisenheimer TL, Winokur PS, Warren WL, Witczak SC. 1/f noise, hydrogen transport, and latent interface-trap buildup in irradiated MOS devices Ieee Transactions On Nuclear Science. 44: 1810-1817. DOI: 10.1109/23.658947 |
0.431 |
|
| 1997 |
Warren WL, Fleetwood DM, Schwank JR, Shaneyfelt MR, Draper BL, Winokur PS, Knoll MG, Vanheusden K, Devine RAB, Archer LB, Wallace RM. Protonic nonvolatile field effect transistor memories in Si/SiO/sub 2//Si structures Ieee Transactions On Nuclear Science. 44: 1789-1798. DOI: 10.1109/23.658944 |
0.42 |
|
| 1997 |
Johnson MJ, Fleetwood DM. Correlation between latent interface trap buildup and 1/f noise in metal–oxide–semiconductor transistors Applied Physics Letters. 70: 1158-1160. DOI: 10.1063/1.118512 |
0.433 |
|
| 1997 |
Vanheusden K, Warren WL, Devine RAB, Fleetwood DM, Schwank JR, Shaneyfelt MR, Winokur PS, Lemnios ZJ. Non-volatile memory device based on mobile protons in SiO 2 thin films Nature. 386: 587-589. DOI: 10.1038/386587A0 |
0.467 |
|
| 1997 |
Vanheusden K, Schwank JR, Warren WL, Fleetwood DM, Devine RAB. Radiation-induced H+ trapping in buried SiO2 Microelectronic Engineering. 36: 241-244. DOI: 10.1016/S0167-9317(97)00056-7 |
0.475 |
|
| 1996 |
Vanheusden K, Warren WL, Fleetwood DM. Direct observation of mobile protons in SiO{sub 2} thin films: Potential application in a novel memory device Mrs Proceedings. 446: 187. DOI: 10.1557/Proc-446-187 |
0.439 |
|
| 1996 |
Witczak SC, Schrimpf RD, Galloway KF, Fleetwood DM, Pease RL, Puhl JM, Schmidt DM, Combs WE, Suehle JS. Gain degradation of lateral and substrate pnp bipolar junction transistors Ieee Transactions On Nuclear Science. 43: 3151-3160. DOI: 10.1109/23.556919 |
0.489 |
|
| 1996 |
Schmidt DM, Wu A, Schrimpf RD, Fleetwood DM, Pease RL. Modeling ionizing radiation induced gain degradation of the lateral PNP bipolar junction transistor Ieee Transactions On Nuclear Science. 43: 3032-3039. DOI: 10.1109/23.556902 |
0.463 |
|
| 1996 |
Warren WL, Vanheusden K, Fleetwood DM, Schwank JR, Shaneyfelt MR, Winokur PS, Devine RAB. A proposed model for positive charge in SiO/sub 2/ thin films. Over-coordinated oxygen centers Ieee Transactions On Nuclear Science. 43: 2617-2626. DOI: 10.1109/23.556844 |
0.443 |
|
| 1996 |
Fleetwood DM, Riewe LC, Schwank JR, Witczak SC, Schrimpf RD. Radiation effects at low electric fields in thermal, SIMOX, and bipolar-base oxides Ieee Transactions On Nuclear Science. 43: 2537-2546. DOI: 10.1109/23.556834 |
0.506 |
|
| 1996 |
Fleetwood DM, Saks NS. Oxide, interface, and border traps in thermal, N2O, and N2O‐nitrided oxides Journal of Applied Physics. 79: 1583-1594. DOI: 10.1063/1.361002 |
0.467 |
|
| 1996 |
Warren WL, Vanheusden K, Schwank JR, Fleetwood DM, Winokur PS, Devine RAB. Mechanism for anneal‐induced interfacial charging in SiO2 thin films on Si Applied Physics Letters. 68: 2993-2995. DOI: 10.1063/1.116674 |
0.421 |
|
| 1996 |
Vanheusden K, Warren WL, Schwank JR, Fleetwood DM, Shaneyfelt MR, Winokur PS, Devine RAB. Nonuniform Oxide Charge And Paramagnetic Interface Traps In High-Temperature Annealed Si/Sio2/Si Structures Applied Physics Letters. 68: 2117-2119. DOI: 10.1063/1.115603 |
0.425 |
|
| 1996 |
Schmidt DM, Wu A, Schrimpf RD, Fleetwood DM, Pease RL. Modeling ionizing radiation induced gain degradation of the lateral PNP bipolar junction transistor Ieee Transactions On Nuclear Science. 43: 3032-3039. |
0.358 |
|
| 1995 |
Warren WL, Shaneyfelt MR, Fleetwood DM, Winokur PS, Montague S. Electron and hole trapping in doped oxides Ieee Transactions On Nuclear Science. 42: 1731-1739. DOI: 10.1109/23.488772 |
0.399 |
|
| 1995 |
Fleetwood DM, Warren WL, Schwank JR, Winokur PS, Shaneyfelt MR, Riewe LC. Effects of interface traps and border traps on MOS postirradiation annealing response Ieee Transactions On Nuclear Science. 42: 1698-1707. DOI: 10.1109/23.488768 |
0.493 |
|
| 1995 |
Schrimpf RD, Graves RJ, Schmidt DM, Fleetwood DM, Pease RL, Combs WE, DeLaus M. Hardness-Assurance Issues for Lateral PNP Bipolar Junction Transistors Ieee Transactions On Nuclear Science. 42: 1641-1649. DOI: 10.1109/23.488761 |
0.428 |
|
| 1995 |
Schmidt DM, Fleetwood DM, Schrimpf RD, Pease RL, Graves RJ, Johnson GH, Galloway KF, Combs WE. Comparison of Ionizing-Radiation-Induced Gain Degradation in Lateral, Substrate, and Vertical PNP BJTs Ieee Transactions On Nuclear Science. 42: 1541-1549. DOI: 10.1109/23.488748 |
0.424 |
|
| 1995 |
Kosier SL, Wei A, Schrimpf RD, Fleetwood DM, DeLaus MD, Pease RL, Combs WE. Physically based comparison of hot-carrier-induced and ionizing-radiation-induced degradation in BJTs Ieee Transactions On Electron Devices. 42: 436-444. DOI: 10.1109/16.368041 |
0.422 |
|
| 1995 |
Warren WL, Shaneyfelt MR, Fleetwood DM, Winokur PS. Nature of defect centers in B‐ and P‐doped SiO2 thin films Applied Physics Letters. 67: 995-997. DOI: 10.1063/1.114970 |
0.383 |
|
| 1995 |
Fleetwood DM, Shaneyfelt MR, Warren WL, Schwank JR, Meisenheimer TL, Winokur PS. Border traps: issues for MOS radiation response and long-term reliability Microelectronics Reliability. 35: 403-428. DOI: 10.1016/0026-2714(95)93068-L |
0.529 |
|
| 1995 |
Fleetwood DM, Warren WL, Shaneyfelt MR, Devine RAB, Scofield JH. Enhanced MOS 1/f noise due to near-interfacial oxygen deficiency Journal of Non-Crystalline Solids. 187: 199-205. DOI: 10.1016/0022-3093(95)00138-7 |
0.481 |
|
| 1994 |
Warren WL, Fleetwood DM, Shaneyfelt MR, Winokur PS, Devine RAB, Mathiot D, Wilson IH, Xu JB. Reliability Implications of Defects in High Temperature Annealed Si/SiO 2 /Si Structures Mrs Proceedings. 338: 3. DOI: 10.1557/Proc-338-3 |
0.427 |
|
| 1994 |
Dreike PL, Fleetwood DM, King DB, Sprauer DC, Zipperian TE. An overview of high-temperature electronic device technologies and potential applications Ieee Transactions On Components, Packaging, and Manufacturing Technology: Part A. 17: 594-609. DOI: 10.1109/95.335047 |
0.379 |
|
| 1994 |
Nowlin RN, Fleetwood DM, Schrimpf RD. Saturation of the Dose-Rate Response of Bipolar Transistors Below 10 rad(SiO2)/s: Implications for Hardness Assurance Ieee Transactions On Nuclear Science. 41: 2637-2641. DOI: 10.1109/23.340625 |
0.409 |
|
| 1994 |
Pease RL, Kosier SL, Schrimpf RD, Combs WE, Davey M, DeLaus M, Fleetwood DM. Comparison of hot-carrier and radiation induced increases in base current in bipolar transistors Ieee Transactions On Nuclear Science. 41: 2567-2573. DOI: 10.1109/23.340617 |
0.458 |
|
| 1994 |
Khosropour P, Galloway KF, Schrimpf RD, Fleetwood DM, Calvel P. Evaluation of a Method for Estimating Low-Dose-Rate Irradiation Response of MOSFETs Ieee Transactions On Nuclear Science. 41: 2560-2566. DOI: 10.1109/23.340616 |
0.434 |
|
| 1994 |
Shaneyfelt MR, Fleetwood DM, Schwank JR, Meisenheimer TL, Winokur PS. Effects of burn-in on radiation hardness Ieee Transactions On Nuclear Science. 41: 2550-2559. DOI: 10.1109/23.340615 |
0.353 |
|
| 1994 |
Fleetwood DM, Kosier SL, Nowlin RN, Schrimpf RD, Reber RA, DeLaus M, Winokur PS, Wei A, Combs WE, Pease RL. Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates Ieee Transactions On Nuclear Science. 41: 1871-1883. DOI: 10.1109/23.340519 |
0.475 |
|
| 1994 |
Saks NS, Simons M, Fleetwood DM, Yount JT, Lenahan PM, Klein RB. Radiation effects in oxynitrides grown in N/sub 2/O Ieee Transactions On Nuclear Science. 41: 1854-1863. DOI: 10.1109/23.340517 |
0.346 |
|
| 1994 |
Warren WL, Shaneyfelt MR, Fleetwood DM, Schwank JR, Winokur PS, Devine RAB. Microscopic nature of border traps in MOS oxides Ieee Transactions On Nuclear Science. 41: 1817-1827. DOI: 10.1109/23.340513 |
0.427 |
|
| 1994 |
Winokur PS, Shaneyfelt MR, Meisenheimer TL, Fleetwood DM. Advanced qualification techniques [microelectronics] Ieee Transactions On Nuclear Science. 41: 538-548. DOI: 10.1109/23.299796 |
0.33 |
|
| 1994 |
Fleetwood DM, Meisenheimer TL, Scofield JH. 1/f noise and radiation effects in MOS devices Ieee Transactions On Electron Devices. 41: 1953-1964. DOI: 10.1109/16.333811 |
0.489 |
|
| 1994 |
Scofield JH, Borland N, Fleetwood DM. Reconciliation of different gate-voltage dependencies of 1/f noise in n-MOS and p-MOS transistors Ieee Transactions On Electron Devices. 41: 1946-1952. DOI: 10.1109/16.333810 |
0.33 |
|
| 1994 |
Wei A, Kosier SL, Schrimpf RD, Fleetwood DM, Combs WE. Dose-rate effects on radiation-induced bipolar junction transistor gain degradation Applied Physics Letters. 65: 1918-1920. DOI: 10.1063/1.112816 |
0.472 |
|
| 1994 |
Warren WL, Fleetwood DM, Shaneyfelt MR, Schwank JR, Winokur PS, Devine RAB, Mathiot D. Links between oxide, interface, and border traps in high‐temperature annealed Si/SiO2 systems Applied Physics Letters. 64: 3452-3454. DOI: 10.1063/1.111943 |
0.425 |
|
| 1994 |
Fleetwood DM, Shaneyfelt MR, Schwank JR. Estimating oxide‐trap, interface‐trap, and border‐trap charge densities in metal‐oxide‐semiconductor transistors Applied Physics Letters. 64: 1965-1967. DOI: 10.1063/1.111757 |
0.436 |
|
| 1994 |
Warren WL, Fleetwood DM, Schwank JR, Shaneyfelt MR, Winokur PS, Devine RAB, Maszara WP. Shallow oxygen‐related donors in bonded and etchback silicon on insulator structures Applied Physics Letters. 64: 508-510. DOI: 10.1063/1.111112 |
0.327 |
|
| 1994 |
Winokur PS, Fleetwood DM, Sexton FW. Radiation-hardened microelectronics for space applications Radiation Physics and Chemistry. 43: 175-190. DOI: 10.1016/0969-806X(94)90210-0 |
0.392 |
|
| 1994 |
Fleetwood DM, Winokur PS, Barnes CE, Shaw DC. Accounting for time-dependent effects on CMOS total-dose response in space environments Radiation Physics and Chemistry. 43: 129-138. DOI: 10.1016/0969-806X(94)90206-2 |
0.505 |
|
| 1994 |
Devine RAB, Warren WL, Shaneyfelt MR, Fleetwood DM, Aspar B. Oxide modification due to high temperature processing of Si/SiO2/Si structures Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 84: 254-257. DOI: 10.1016/0168-583X(94)95765-7 |
0.381 |
|
| 1993 |
Devine RAB, Mathiot D, Warren WL, Fleetwood DM. Near interface oxide degradation in high temperature annealed Si/SiO2/Si structures Mrs Proceedings. 318. DOI: 10.1557/Proc-318-623 |
0.395 |
|
| 1993 |
Kosier SL, Shrimpf RD, Nowlin RN, Fleetwood DM, DeLaus M, Pease RL, Combs WE, Wei A, Chai F. Charge separation for bipolar transistors Ieee Transactions On Nuclear Science. 40: 1276-1285. DOI: 10.1109/23.273541 |
0.447 |
|
| 1993 |
Mayer TS, Fleetwood DM, Beutler DE, Cooper JA, Melloch MR. Unexpected increase in the thermal generation rate of bulk GaAs due to electron-beam metallization Ieee Transactions On Nuclear Science. 40: 1293-1299. DOI: 10.1109/23.273539 |
0.39 |
|
| 1993 |
Fleetwood DM, Shaneyfelt MR, Riewe LC, Winokur PS, Reber RA. Role of border traps in MOS high-temperature postirradiation annealing response Ieee Transactions On Nuclear Science. 40: 1323-1334. DOI: 10.1109/23.273535 |
0.518 |
|
| 1993 |
Schwank JR, Fleetwood DM, Shaneyfelt MR, Winokur PS. A critical comparison of charge-pumping, dual-transistor, and midgap measurement techniques (MOS transistors) Ieee Transactions On Nuclear Science. 40: 1666-1677. DOI: 10.1109/23.273494 |
0.449 |
|
| 1993 |
Shaneyfelt MR, Fleetwood DM, Winokur PS, Schwank JR, Meisenheimer TL. Effects of device scaling and geometry on MOS radiation hardness assurance Ieee Transactions On Nuclear Science. 40: 1678-1685. DOI: 10.1109/23.273493 |
0.466 |
|
| 1993 |
Nowlin RN, Schrimpf RD, Fleetwood DM, Pease RL, Combs WE. Hardness-Assurance and Testing Issues for Bipolar/BiCMOS Devices Ieee Transactions On Nuclear Science. 40: 1686-1693. DOI: 10.1109/23.273492 |
0.462 |
|
| 1993 |
Warren WL, Shaneyfelt MR, Schwank JR, Fleetwood DM, Winokur PS, Devine RAB, Maszara WP, McKitterick JB. Paramagnetic defect centers in BESOI and SIMOX buried oxides Ieee Transactions On Nuclear Science. 40: 1755-1764. DOI: 10.1109/23.273482 |
0.448 |
|
| 1993 |
Miller SL, Fleetwood DM, McWhorter PJ, Reber RA, Murray JR. A general centroid determination methodology, with application to multilayer dielectric structures and thermally stimulated current measurements Journal of Applied Physics. 74: 5068-5077. DOI: 10.1063/1.354291 |
0.378 |
|
| 1993 |
Fleetwood DM, Winokur PS, Reber RA, Meisenheimer TL, Schwank JR, Shaneyfelt MR, Riewe LC. Effects of oxide traps, interface traps, and "border traps" on metal-oxide-semiconductor devices Journal of Applied Physics. 73: 5058-5074. DOI: 10.1063/1.353777 |
0.472 |
|
| 1993 |
Devine RAB, Mathiot D, Warren WL, Fleetwood DM, Aspar B. Point defect generation during high temperature annealing of the Si‐SiO2 interface Applied Physics Letters. 63: 2926-2928. DOI: 10.1063/1.110275 |
0.363 |
|
| 1993 |
Warren WL, Fleetwood DM, Shaneyfelt MR, Schwank JR, Winokur PS, Devine RAB. Excess‐Si related defect centers in buried SiO2 thin films Applied Physics Letters. 62: 3330-3332. DOI: 10.1063/1.109061 |
0.346 |
|
| 1993 |
Warren WL, Schwank JR, Shaneyfelt MR, Fleetwood DM, Winokur PS. Hydrogen interactions with delocalized spin centers in buried SiO2 thin films Applied Physics Letters. 62: 1661-1663. DOI: 10.1063/1.108619 |
0.412 |
|
| 1993 |
Warren WL, Schwank JR, Shaneyfelt MR, Fleetwood DM, Winokur PS, Maszara WP, McKitterick JB. Radiation-induced defect centers in bonded and etchback SOI materials Microelectronic Engineering. 22: 387-390. DOI: 10.1016/0167-9317(93)90194-A |
0.359 |
|
| 1993 |
Kosier SL, Schrimpf RD, Wei A, DeLaus M, Fleetwood DM, Combs WE. Effects of oxide charge and surface recombination velocity on the excess base current of BJTs Proceedings of the 1993 Bipolar/Bicoms Circuits and Technology. 211-214. |
0.33 |
|
| 1992 |
Miller SL, Fleetwood DM, McWhorter PJ. Determining the energy distribution of traps in insulating thin films using the thermally stimulated current technique. Physical Review Letters. 69: 820-823. PMID 10047041 DOI: 10.1103/Physrevlett.69.820 |
0.387 |
|
| 1992 |
Schwank JR, Fleetwood DM, Shaneyfelt MR, Winokur PS. Latent thermally activated interface-trap generation in MOS devices Ieee Electron Device Letters. 13: 203-205. DOI: 10.1109/55.145021 |
0.445 |
|
| 1992 |
Fleetwood DM. 'Border traps' in MOS devices Ieee Transactions On Nuclear Science. 39: 269-271. DOI: 10.1109/23.277495 |
0.459 |
|
| 1992 |
Shaneyfelt MR, Schwank JR, Fleetwood DM, Winokur PS, Hughes KL, Hash GL, Connors MP. Interface-trap building rates in wet and dry oxides Ieee Transactions On Nuclear Science. 39: 2244-2251. DOI: 10.1109/23.211427 |
0.439 |
|
| 1992 |
Fleetwood DM, Miller SL, Reber RA, McWhorter PJ, Winokur PS, Shaneyfelt MR, Schwank JR. New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis Ieee Transactions On Nuclear Science. 39: 2192-2203. DOI: 10.1109/23.211421 |
0.462 |
|
| 1992 |
Schwank JR, Fleetwood DM, Shaneyfelt MR, Winokur PS, Axness CL, Riewe LC. Latent interface-trap buildup and its implications for hardness assurance (MOS transistors) Ieee Transactions On Nuclear Science. 39: 1953-1963. DOI: 10.1109/23.211391 |
0.435 |
|
| 1992 |
Sexton FW, Fleetwood DM, Aldridge CC, Garrett G, Pelletier JC, Gaona JI. Qualifying commercial ICs for space total-dose environments Ieee Transactions On Nuclear Science. 39: 1869-1875. DOI: 10.1109/23.211380 |
0.463 |
|
| 1992 |
Reber RA, Fleetwood DM. Thermally stimulated current measurements of SiO2 defect density and energy in irradiated metal-oxide-semiconductor capacitors Review of Scientific Instruments. 63: 5714-5725. DOI: 10.1063/1.1143354 |
0.396 |
|
| 1992 |
Fleetwood DM, Reber RA, Winokur PS. Trapped-hole annealing and electron trapping in metal-oxide-semiconductor devices Applied Physics Letters. 60: 2008-2010. DOI: 10.1063/1.107126 |
0.466 |
|
| 1991 |
Shaneyfelt MR, Enlow EW, Hughes KL, Schwank JR, Sexton FW, Fleetwood DM, Winokur PS. Wafer-level radiation testing for hardness assurance Ieee Transactions On Nuclear Science. 38: 1598-1605. DOI: 10.1109/23.124151 |
0.327 |
|
| 1991 |
Scofield JH, Fleetwood DM. Physical basis for nondestructive tests of MOS radiation hardness Ieee Transactions On Nuclear Science. 38: 1567-1577. DOI: 10.1109/23.124147 |
0.462 |
|
| 1991 |
Fleetwood DM, Winokur PS, Meisenheimer TL. Hardness assurance for low-dose space applications (MOS devices) Ieee Transactions On Nuclear Science. 38: 1552-1559. DOI: 10.1109/23.124145 |
0.46 |
|
| 1991 |
Meisenheimer TL, Fleetwood DM, Shaneyfelt MR, Riewe LC. 1/f noise in n- and p-channel MOS devices through irradiation and annealing Ieee Transactions On Nuclear Science. 38: 1297-1303. DOI: 10.1109/23.124108 |
0.417 |
|
| 1991 |
Shaneyfelt MR, Fleetwood DM, Schwank JR, Hughes KL. Charge yield for cobalt-60 and 10-keV X-ray irradiations of MOS devices Ieee Transactions On Nuclear Science. 38: 1187-1194. DOI: 10.1109/23.124092 |
0.433 |
|
| 1991 |
Fleetwood DM, Reber RA, Winokur PS. Effect of bias on thermally stimulated current (TSC) in irradiated MOS devices Ieee Transactions On Nuclear Science. 38: 1066-1077. DOI: 10.1109/23.124076 |
0.457 |
|
| 1991 |
Miller PA, Fleetwood DM, Schubert WK. Damage due to electron, ion, and x‐ray lithography Journal of Applied Physics. 69: 488-494. DOI: 10.1063/1.348909 |
0.408 |
|
| 1991 |
Scofield JH, Trawick M, Klimecky P, Fleetwood DM. Correlation between preirradiation channel mobility and radiation‐induced interface‐trap charge in metal‐oxide‐semiconductor transistors Applied Physics Letters. 58: 2782-2784. DOI: 10.1063/1.104760 |
0.438 |
|
| 1990 |
Fleetwood DM, Scofield JH. Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors. Physical Review Letters. 64: 579-582. PMID 10042020 DOI: 10.1103/Physrevlett.64.579 |
0.405 |
|
| 1990 |
Beutler DE, Beezhold W, Browning JS, Fleetwood DM, Counts NE, Knott DP, Freshman CL, Conners MP. Comparison of photocurrent enhancement and upset enhancement in CMOS devices in a medium-energy X-ray environment Ieee Transactions On Nuclear Science. 37: 1541-1547. DOI: 10.1109/23.55867 |
0.397 |
|
| 1990 |
Fleetwood DM, Winokur PS, Riewe LC. Predicting switched-bias response from steady-state irradiations MOS transistors Ieee Transactions On Nuclear Science. 37: 1806-1817. DOI: 10.1109/23.101194 |
0.422 |
|
| 1990 |
Winokur PS, Sexton FW, Fleetwood DM, Terry MD, Shaneyfelt MR, Dressendorfer PV, Schwank JR. Implementing QML for radiation hardness assurance Ieee Transactions On Nuclear Science. 37: 1794-1805. DOI: 10.1109/23.101193 |
0.396 |
|
| 1990 |
Meisenheimer TL, Fleetwood DM. Effect of radiation-induced charge on 1/f noise in MOS devices Ieee Transactions On Nuclear Science. 37: 1696-1702. DOI: 10.1109/23.101179 |
0.492 |
|
| 1990 |
Shaneyfelt MR, Schwank JR, Fleetwood DM, Winokur PS, Hughes KL, Sexton FW. Field dependence of interface-trap buildup in polysilicon and metal gate MOS devices Ieee Transactions On Nuclear Science. 37: 1632-1640. DOI: 10.1109/23.101171 |
0.423 |
|
| 1989 |
Schwank JR, Sexton FW, Fleetwood DM, Rodgers MS, Shaneyfelt MR, Hughes KL. Strategies for lot acceptance testing using CMOS transistors and ICs Ieee Transactions On Nuclear Science. 36: 1971-1980. DOI: 10.1109/23.45394 |
0.332 |
|
| 1989 |
Fleetwood DM, Winokur PS, Riewe LC, Pease RL. An improved standard total dose test for CMOS space electronics Ieee Transactions On Nuclear Science. 36: 1963-1970. DOI: 10.1109/23.45393 |
0.448 |
|
| 1989 |
Scofield JH, Doerr TP, Fleetwood DM. Correlation between preirradiation 1/f noise and postirradiation oxide-trapped charge in MOS transistors Ieee Transactions On Nuclear Science. 36: 1946-1953. DOI: 10.1109/23.45391 |
0.465 |
|
| 1989 |
Fleetwood DM, Shaneyfelt MR, Schwank JR, Winokur PS, Sexton FW. Theory and application of dual-transistor charge separation analysis Ieee Transactions On Nuclear Science. 36: 1816-1824. DOI: 10.1109/23.45374 |
0.433 |
|
| 1989 |
McWhorter PJ, Fleetwood DM, Pastorek RA, Zimmerman GT. Comparison of MOS capacitor and transistor postirradiation response Ieee Transactions On Nuclear Science. 36: 1792-1799. DOI: 10.1109/23.45371 |
0.445 |
|
| 1988 |
Fleetwood DM, Thome FV, Tsao SS, Dressendorfer PV, Dandini VJ, Schwank JR. High-temperature silicon-on-insulator electronics for space nuclear power systems: requirements and feasibility Ieee Transactions On Nuclear Science. 35: 1099-1112. DOI: 10.1109/23.7506 |
0.41 |
|
| 1988 |
Axness CL, Schwank JR, Winokur PS, Browning JS, Koga R, Fleetwood DM. Single event upset in irradiated 16 K CMOS SRAMs Ieee Transactions On Nuclear Science. 35: 1602-1607. DOI: 10.1109/23.25505 |
0.388 |
|
| 1988 |
Fleetwood DM, Winokur PS, Schwank JR. Using laboratory X-ray and cobalt-60 irradiations to predict CMOS device response in strategic and space environments Ieee Transactions On Nuclear Science. 35: 1497-1505. DOI: 10.1109/23.25487 |
0.525 |
|
| 1988 |
Schwank JR, Sexton FW, Fleetwood DM, Jones RV, Flores RS, Rodgers MS, Hughes KL. Temperature effects on the radiation response of MOS Devices Ieee Transactions On Nuclear Science. 35: 1432-1437. DOI: 10.1109/23.25476 |
0.451 |
|
| 1988 |
Fleetwood DM, Tsao SS, Winokur PS. Total-dose hardness assurance issues for SOI MOSFETs Ieee Transactions On Nuclear Science. 35: 1361-1367. DOI: 10.1109/23.25465 |
0.485 |
|
| 1988 |
Fleetwood DM, Beutler DE, Lorence LJ, Brown DB, Draper BL, Riewe LC, Rosenstock HB, Knott DP. Comparison of enhanced device response and predicted X-ray dose enhancement effects on MOS oxides Ieee Transactions On Nuclear Science. 35: 1265-1271. DOI: 10.1109/23.25450 |
0.414 |
|
| 1988 |
Schwank JR, Fleetwood DM. Effect of post‐oxidation anneal temperature on radiation‐induced charge trapping in metal‐oxide‐semiconductor devices Applied Physics Letters. 53: 770-772. DOI: 10.1063/1.99828 |
0.318 |
|
| 1988 |
Fleetwood DM, Winokur PS, Dozier CM, Brown DB. Effect of bias on the response of metal‐oxide‐semiconductor devices to low‐energy x‐ray and cobalt‐60 irradiation Applied Physics Letters. 52: 1514-1516. DOI: 10.1063/1.99116 |
0.455 |
|
| 1987 |
Tsao SS, Fleetwood DM, Weaver HT, Pfeiffer L, Celler GK. Radiation-Tolerant, Sidewall-Hardened SOI/MOS Transistors Ieee Transactions On Nuclear Science. 34: 1686-1691. DOI: 10.1109/Tns.1987.4337537 |
0.486 |
|
| 1987 |
Beutler DE, Fleetwood DM, Beezhold W, Knott D, Lorence LJ, Draper BL. Variations in Semiconductor Device Response in a Medium-Energy X-Ray Dose-Enhancing Environment Ieee Transactions On Nuclear Science. 34: 1544-1550. DOI: 10.1109/Tns.1987.4337513 |
0.489 |
|
| 1987 |
Dozier CM, Fleetwood DM, Brown DB, Winokur PS. An Evaluation of Low-Energy X-Ray and Cobalt-60 Irradiations of MOS Transistors Ieee Transactions On Nuclear Science. 34: 1535-1539. DOI: 10.1109/Tns.1987.4337511 |
0.412 |
|
| 1987 |
Fleetwood DM, Dressendorfer PV. A Simple Method to Identify Radiation and Annealing Biases That Lead to Worst-Case CMOS Static Ram Postirradiation Response Ieee Transactions On Nuclear Science. 34: 1408-1413. DOI: 10.1109/Tns.1987.4337489 |
0.415 |
|
| 1987 |
Fleetwood DM, Dressendorfer PV, Turpin DC. A Reevaluation of Worst-Case Postirradiation Response for Hardened MOS Transistors Ieee Transactions On Nuclear Science. 34: 1178-1183. DOI: 10.1109/Tns.1987.4337449 |
0.499 |
|
| 1987 |
Schwank JR, Fleetwood DM, Winokur PS, Dressendorfer PV, Turpin DC, Sanders DT. The Role of Hydrogen in Radiation-Induced Defect Formation in Polysilicon Gate MOS Devices Ieee Transactions On Nuclear Science. 34: 1152-1158. DOI: 10.1109/Tns.1987.4337445 |
0.512 |
|
| 1986 |
Winokur PS, Sexton FW, Schwank JR, Fleetwood DM, Dressendorfer PV, Wrobel TF, Turpin DC. Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance Testing Ieee Transactions On Nuclear Science. 33: 1343-1351. DOI: 10.1109/Tns.1986.4334603 |
0.378 |
|
| 1986 |
Fleetwood DM, Beegle RW, Sexton FW, Winokur PS, Miller SL, Treece RK, Schwank JR, Jones RV, McWhorter PJ. USING A 10-KEV X-RAY SOURCE FOR HARDNESS ASSURANCE. Ieee Transactions On Nuclear Science. DOI: 10.1109/Tns.1986.4334601 |
0.38 |
|
| 1986 |
Fleetwood DM, Winokur PS, Lorence LJ, Beezhold W, Dressendorfer PV, Schwank JR. The Response of MOS Devices to Dose-Enhanced Low-Energy Radiation Ieee Transactions On Nuclear Science. 33: 1245-1251. DOI: 10.1109/Tns.1986.4334586 |
0.48 |
|
| 1986 |
Schwank JR, Winokur PS, Sexton FW, Fleetwood DM, Perry JH, Dressendorfer PV, Sanders DT, Turpin DC. “Radiation-induced interface-state generation in MOS devices” Ieee Transactions On Nuclear Science. 33: 1177-1184. DOI: 10.1109/Tns.1986.4334575 |
0.396 |
|
| 1985 |
Fleetwood DM, Winokur PS, Beegle RW, Dressendorfer PV, Draper BL. Accounting for Dose-Enhancement Effects with CMOS Transistors Ieee Transactions On Nuclear Science. 32: 4369-4375. DOI: 10.1109/Tns.1985.4334126 |
0.484 |
|
| 1985 |
Winokur PS, Errett EB, Fleetwood DM, Dressendorfer PV, Turpin DC. Optimizing and Controlling the Radiation Hardness of a Si-Gate CMOS Process Ieee Transactions On Nuclear Science. 32: 3953-3960. DOI: 10.1109/Tns.1985.4334049 |
0.418 |
|
| 1985 |
McBrayer JD, Fleetwood DM, Pastorek RA, Jones RV. Correlation of Hot-Carrier and Radiation Effects in MOS Transistors Ieee Transactions On Nuclear Science. 32: 3935-3939. DOI: 10.1109/Tns.1985.4334046 |
0.449 |
|
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