| Year |
Citation |
Score |
| 2023 |
Cai M, Miao MP, Liang Y, Jiang Z, Liu ZY, Zhang WH, Liao X, Zhu LF, West D, Zhang S, Fu YS. Manipulating single excess electrons in monolayer transition metal dihalide. Nature Communications. 14: 3691. PMID 37344472 DOI: 10.1038/s41467-023-39360-1 |
0.655 |
|
| 2022 |
Besse R, Wang H, West D, Da Silva JLF, Zhang S. Prediction of Effective Photoelectron and Hole Separation in Type-I MoS/PtSe van der Waals Junction. The Journal of Physical Chemistry Letters. 6407-6411. PMID 35802831 DOI: 10.1021/acs.jpclett.2c01526 |
0.69 |
|
| 2021 |
Ciesler M, West D, Zhang S. Ligand-Assisted Charge-Transfer Mechanism: The Case of CdSe/Cysteine/MoS Heterostructures. The Journal of Physical Chemistry Letters. 12329-12335. PMID 34935388 DOI: 10.1021/acs.jpclett.1c03232 |
0.624 |
|
| 2021 |
Han N, Xie W, Zhang J, Liu L, Zhao J, West D, Zhang S. Remote Passivation in Two-Dimensional Materials: The Case of the Monolayer-Bilayer Lateral Junction of MoSe. The Journal of Physical Chemistry Letters. 12: 8046-8052. PMID 34433273 DOI: 10.1021/acs.jpclett.1c02457 |
0.632 |
|
| 2021 |
Ghoshal D, Shang H, Sun X, Wen X, Chen D, Wang T, Lu Z, Gupta T, Efstathiadis H, West D, Koratkar N, Lu TM, Zhang S, Shi SF. Orientation-Controlled Large-Area Epitaxial PbI Thin Films with Tunable Optical Properties. Acs Applied Materials & Interfaces. PMID 34196518 DOI: 10.1021/acsami.1c05734 |
0.601 |
|
| 2021 |
Yang G, Wang R, Ge M, Guo M, Wang J, Ma R, Zhang J, West D, Zhang S. Switchable electronic and enhanced magnetic properties of CrI edges. Physical Chemistry Chemical Physics : Pccp. PMID 33899853 DOI: 10.1039/d0cp06155g |
0.64 |
|
| 2021 |
Qin L, Zhang ZH, Jiang Z, Fan K, Zhang WH, Tang QY, Xia HN, Meng F, Zhang Q, Gu L, West D, Zhang S, Fu YS. Realization of AlSb in the Double-Layer Honeycomb Structure: A Robust Class of Two-Dimensional Material. Acs Nano. PMID 33723991 DOI: 10.1021/acsnano.1c00470 |
0.647 |
|
| 2021 |
Zhang H, Holbrook M, Cheng F, Nam H, Liu M, Pan CR, West D, Zhang S, Chou MY, Shih CK. Epitaxial Growth of Two-Dimensional Insulator Monolayer Honeycomb BeO. Acs Nano. PMID 33481561 DOI: 10.1021/acsnano.0c06596 |
0.742 |
|
| 2020 |
Chaste J, Hnid I, Khalil L, Si C, Durnez A, Lafosse X, Zhao MQ, Johnson ATC, Zhang S, Bang J, Ouerghi A. Phase Transition in a Memristive Suspended MoS Monolayer Probed by Opto- and Electro-Mechanics. Acs Nano. PMID 33054170 DOI: 10.1021/acsnano.0c05721 |
0.669 |
|
| 2020 |
Wei X, Hui H, Perera S, Sheng A, Watson DF, Sun YY, Jia Q, Zhang S, Zeng H. Ti-Alloying of BaZrS Chalcogenide Perovskite for Photovoltaics. Acs Omega. 5: 18579-18583. PMID 32775859 DOI: 10.1021/acsomega.0c00740 |
0.618 |
|
| 2020 |
Cheng K, Wang H, Bang J, West D, Zhao J, Zhang S. Carrier Dynamics and Transfer Across the CdS/MoS Interface Upon Optical Excitation. The Journal of Physical Chemistry Letters. PMID 32693591 DOI: 10.1021/Acs.Jpclett.0C01188 |
0.785 |
|
| 2020 |
Jiang Z, Lou W, Liu Y, Li Y, Song H, Chang K, Duan W, Zhang S. Spin-Triplet Excitonic Insulator: The Case of Semihydrogenated Graphene. Physical Review Letters. 124: 166401. PMID 32383949 DOI: 10.1103/Physrevlett.124.166401 |
0.415 |
|
| 2020 |
Zhou J, Xie Y, Zhang S, Chen Y. Critical topological nodal points and nodal lines/rings in Kagome graphene. Physical Chemistry Chemical Physics : Pccp. PMID 32270831 DOI: 10.1039/D0Cp00190B |
0.379 |
|
| 2020 |
Ma J, Wang H, Nie S, Yi C, Xu Y, Li H, Jandke J, Wulfhekel W, Huang Y, West D, Richard P, Chikina A, Strocov VN, Mesot J, Weng H, ... Zhang S, et al. Emergence of Nontrivial Low-Energy Dirac Fermions in Antiferromagnetic EuCd As. Advanced Materials (Deerfield Beach, Fla.). e1907565. PMID 32091144 DOI: 10.1002/Adma.201907565 |
0.692 |
|
| 2020 |
Fratanduono DE, Smith RF, Ali SJ, Braun DG, Fernandez-Pañella A, Zhang S, Kraus RG, Coppari F, McNaney JM, Marshall MC, Kirch LE, Swift DC, Millot M, Wicks JK, Eggert JH. Probing the Solid Phase of Noble Metal Copper at Terapascal Conditions. Physical Review Letters. 124: 015701. PMID 31976690 DOI: 10.1103/Physrevlett.124.015701 |
0.326 |
|
| 2020 |
Chen J, Xie W, Li K, Zhang S, Sun Y. Benchmarking PBE+D3 and SCAN+rVV10 methods using potential energy surfaces generated with MP2+ΔCCSD(T) calculation Chinese Physics B. 29: 13102. DOI: 10.1088/1674-1056/Ab5Fbb |
0.603 |
|
| 2020 |
Lian Z, Jiang Z, Wang T, Blei M, Qin Y, Washington M, Lu T, Tongay S, Zhang S, Shi S. Anisotropic band structure of TiS3 nanoribbon revealed by polarized photocurrent spectroscopy Applied Physics Letters. 117: 073101. DOI: 10.1063/5.0019828 |
0.379 |
|
| 2020 |
Wang R, Su Y, Yang G, Zhang J, Zhang S. Bipolar Doping by Intrinsic Defects and Magnetic Phase Instability in Monolayer CrI3 Chemistry of Materials. 32: 1545-1552. DOI: 10.1021/Acs.Chemmater.9B04645 |
0.379 |
|
| 2020 |
Chen Y, Xie Y, Yan X, Cohen ML, Zhang S. Topological carbon materials: A new perspective Physics Reports. 868: 1-32. DOI: 10.1016/J.Physrep.2020.05.003 |
0.448 |
|
| 2020 |
Wei X, Hui H, Zhao C, Deng C, Han M, Yu Z, Sheng A, Roy P, Chen A, Lin J, Watson DF, Sun Y, Thomay T, Yang S, Jia Q, ... Zhang S, et al. Realization of BaZrS3 chalcogenide perovskite thin films for optoelectronics Nano Energy. 68: 104317. DOI: 10.1016/J.Nanoen.2019.104317 |
0.632 |
|
| 2020 |
Chai J, Shao Z, Wang H, Ming C, Oh W, Ye T, Zhang Y, Cao X, Jin P, Zhang S, Sun Y. Ultrafast processes in photochromic material YH x O y studied by excited-state density functional theory simulation Science China. Materials. 63: 1579-1587. DOI: 10.1007/S40843-020-1343-X |
0.644 |
|
| 2020 |
Gao Y, Zhang Y, Sun J, Zhang L, Zhang S, Du S. Quantum anomalous Hall effect in two-dimensional Cu-dicyanobenzene coloring-triangle lattice Nano Research. 13: 1571-1575. DOI: 10.1007/S12274-020-2772-2 |
0.69 |
|
| 2020 |
Gupta T, Ghoshal D, Yoshimura A, Basu S, Chow PK, Lakhnot AS, Pandey J, Warrender JM, Efstathiadis H, Soni A, Osei‐Agyemang E, Balasubramanian G, Zhang S, Shi S, Lu T, et al. An Environmentally Stable and Lead‐Free Chalcogenide Perovskite Advanced Functional Materials. 30: 2001387. DOI: 10.1002/Adfm.202001387 |
0.31 |
|
| 2019 |
Wang H, Qiu Z, Xia W, Ming C, Han Y, Cao L, Lu J, Zhang P, Zhang S, Xu H, Sun YY. Correction to "Semimetal or Semiconductor: The Nature of High Intrinsic Electrical Conductivity in TiS". The Journal of Physical Chemistry Letters. 160. PMID 31846334 DOI: 10.1021/Acs.Jpclett.9B03400 |
0.635 |
|
| 2019 |
Wang C, Li A, Li C, Zhang S, Li H, Zhou X, Hu L, Feng Y, Wang K, Zhu Z, Shao R, Chen Y, Gao P, Mao S, Huang J, et al. Ultrahigh Photocatalytic Rate at a Single-Metal-Atom-Oxide. Advanced Materials (Deerfield Beach, Fla.). e1903491. PMID 31725182 DOI: 10.1002/Adma.201903491 |
0.34 |
|
| 2019 |
Wang H, Qiu Z, Xia W, Ming C, Han Y, Cao L, Lu J, Zhang P, Zhang S, Xu H, Sun YY. Semimetal or Semiconductor: the Nature of High Intrinsic Electrical Conductivity in TiS. The Journal of Physical Chemistry Letters. PMID 31652068 DOI: 10.1021/Acs.Jpclett.9B02710 |
0.688 |
|
| 2019 |
Tan H, Liu H, Li Y, Duan W, Zhang S. Understanding the origin of bandgap problem in transition and post-transition metal oxides. The Journal of Chemical Physics. 151: 124703. PMID 31575162 DOI: 10.1063/1.5111188 |
0.368 |
|
| 2019 |
Chai J, Zheng Z, Pan H, Zhang S, Lakshmi KV, Sun YY. Correction: Significance of hydrogen bonding networks in the proton-coupled electron transfer reactions of photosystem II from a quantum-mechanics perspective. Physical Chemistry Chemical Physics : Pccp. PMID 31552964 DOI: 10.1039/C9Cp90238D |
0.601 |
|
| 2019 |
Jiang Z, Li Y, Duan W, Zhang S. Half-Excitonic Insulator: A Single-Spin Bose-Einstein Condensate. Physical Review Letters. 122: 236402. PMID 31298916 DOI: 10.1103/Physrevlett.122.236402 |
0.379 |
|
| 2019 |
Si C, Choe DH, Xie W, Wang H, Sun Z, Bang J, Zhang S. Photo-Induced Vacancy Ordering and Phase Transition in MoTe2. Nano Letters. PMID 31096752 DOI: 10.1021/Acs.Nanolett.9B00613 |
0.769 |
|
| 2019 |
Chai J, Zheng Z, Pan H, Zhang S, Lakshmi KV, Sun YY. Significance of hydrogen bonding networks in the proton-coupled electron transfer reactions of photosystem II from a quantum-mechanics perspective. Physical Chemistry Chemical Physics : Pccp. PMID 30968099 DOI: 10.1039/c9cp00868c |
0.589 |
|
| 2019 |
Zhang SB, Jackson WB, Chadi DJ. Diatomic-hydrogen-complex dissociation: A microscopic model for metastable defect generation in Si. Physical Review Letters. 65: 2575-2578. PMID 10042632 DOI: 10.1103/Physrevlett.65.2575 |
0.349 |
|
| 2019 |
Xiao C, Wang X, Pi X, Yang SA, Feng Y, Lu Y, Zhang S. Spontaneous symmetry lowering of Si (001) towards two-dimensional ferro/antiferroelectric behavior Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.044410 |
0.374 |
|
| 2018 |
Lei SY, Shen HY, Sun YY, Wan N, Yu H, Zhang S. Enhancing the ambient stability of few-layer black phosphorus by surface modification. Rsc Advances. 8: 14676-14683. PMID 35540766 DOI: 10.1039/c8ra00560e |
0.593 |
|
| 2018 |
Choe DH, West D, Zhang S. Band Alignment and the Built-in Potential of Solids. Physical Review Letters. 121: 196802. PMID 30468617 DOI: 10.1103/Physrevlett.121.196802 |
0.803 |
|
| 2018 |
Chen L, Liu J, Jiang C, Zhao K, Chen H, Shi X, Chen L, Sun C, Zhang S, Wang Y, Zhang Z. Nanoscale Behavior and Manipulation of the Phase Transition in Single-Crystal Cu Se. Advanced Materials (Deerfield Beach, Fla.). e1804919. PMID 30422346 DOI: 10.1002/Adma.201804919 |
0.3 |
|
| 2018 |
Lin Z, Choi JH, Zhang Q, Qin W, Yi S, Wang P, Li L, Wang Y, Zhang H, Sun Z, Wei L, Zhang S, Guo T, Lu Q, Cho JH, et al. Flatbands and Emergent Ferromagnetic Ordering in Fe_{3}Sn_{2} Kagome Lattices. Physical Review Letters. 121: 096401. PMID 30230862 DOI: 10.1103/Physrevlett.121.096401 |
0.392 |
|
| 2018 |
Li Z, Wang T, Lu Z, Jin C, Chen Y, Meng Y, Lian Z, Taniguchi T, Watanabe K, Zhang S, Smirnov D, Shi SF. Revealing the biexciton and trion-exciton complexes in BN encapsulated WSe. Nature Communications. 9: 3719. PMID 30213927 DOI: 10.1038/S41467-018-05863-5 |
0.39 |
|
| 2018 |
Lu Z, Sun X, Xue W, Littlejohn A, Wang GC, Zhang S, Washington MA, Lu TM. Remote epitaxy of copper on sapphire through monolayer graphene buffer. Nanotechnology. PMID 30124437 DOI: 10.1088/1361-6528/Aadb78 |
0.302 |
|
| 2018 |
Li Y, Wang T, Wang H, Li Z, Chen Y, West D, Sankar R, Ulaganathan RK, Chou FC, Wetzel C, Xu CY, Zhang S, Shi S. Enhanced Light Emission from the Ridge of Two-dimensional InSe Flakes. Nano Letters. PMID 30021441 DOI: 10.1021/Acs.Nanolett.8B01940 |
0.699 |
|
| 2018 |
Zheng F, Zhao J, Liu Z, Li M, Zhou M, Zhang S, Zhang P. Tunable spin states in the two-dimensional magnet CrI. Nanoscale. PMID 30015343 DOI: 10.1039/C8Nr03230K |
0.326 |
|
| 2018 |
Zhu Z, Cui P, Cai X, Xia M, Jia Y, Zhang S, Zhang Z. Red phosphorus in its two-dimensional limit: novel clathrates with varying band gaps and superior chemical stabilities. Nanoscale. PMID 30009303 DOI: 10.1039/C8Nr02877J |
0.385 |
|
| 2018 |
Chen NK, Li XB, Bang J, Wang XP, Han D, West D, Zhang S, Sun HB. Directional Forces by Momentumless Excitation and Order-to-Order Transition in Peierls-Distorted Solids: The Case of GeTe. Physical Review Letters. 120: 185701. PMID 29775378 DOI: 10.1103/Physrevlett.120.185701 |
0.76 |
|
| 2018 |
Li X, Li B, Fan X, Wei L, Li L, Tao R, Zhang X, Zhang H, Zhang Q, Zhu H, Zhang S, Zhang Z, Zeng C. Atomically flat and thermally stable graphene on Si(111) with preserved intrinsic electronic properties. Nanoscale. PMID 29701214 DOI: 10.1039/C8Nr02005A |
0.358 |
|
| 2018 |
Xie SY, Wang L, Liu F, Li XB, Bai L, Prakapenka VB, Cai Z, Mao HK, Zhang S, Liu H. Correlated High-Pressure Phase Sequence of VO under Strong Compression. The Journal of Physical Chemistry Letters. PMID 29669204 DOI: 10.1021/Acs.Jpclett.8B00771 |
0.307 |
|
| 2018 |
Zhang J, Xie W, Agiorgousis ML, Choe DH, Meunier V, Xu X, Zhao J, Zhang S. Quantum oscillation in carrier transport in two-dimensional junctions. Nanoscale. PMID 29666851 DOI: 10.1039/C8Nr01359D |
0.765 |
|
| 2018 |
Chen N, Li X, Wang X, Xie S, Tian WQ, Zhang S, Sun H. Erratum to “Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study” [Jan 18 140-146] Ieee Transactions On Nanotechnology. 17: 614-614. DOI: 10.1109/Tnano.2018.2823098 |
0.303 |
|
| 2018 |
Chen N, Li X, Wang X, Xie S, Tian WQ, Zhang S, Sun H. Metal–Insulator Transition of Ge–Sb–Te Superlattice: An Electron Counting Model Study Ieee Transactions On Nanotechnology. 17: 140-146. DOI: 10.1109/Tnano.2017.2779579 |
0.418 |
|
| 2018 |
Zhang W, West D, Lee SH, Qiu Y, Chang C, Moodera JS, Hor YS, Zhang S, Wu W. Electronic fingerprints of Cr and V dopants in the topological insulator
Sb2Te3 Physical Review B. 98. DOI: 10.1103/Physrevb.98.115165 |
0.659 |
|
| 2018 |
Jiang Z, Li Y, Zhang S, Duan W. Realizing an intrinsic excitonic insulator by decoupling exciton binding energy from the minimum band gap Physical Review B. 98: 81408. DOI: 10.1103/Physrevb.98.081408 |
0.404 |
|
| 2018 |
Lucking MC, Zheng F, Han MJ, Bang J, Zhang S. Doping-induced antiferromagnetic bicollinear insulating state and superconducting temperature of monolayer FeSe systems Physical Review B. 98. DOI: 10.1103/Physrevb.98.014504 |
0.678 |
|
| 2018 |
Gao Y, Chen Y, Xie Y, Chang P, Cohen ML, Zhang S. A class of topological nodal rings and its realization in carbon networks Physical Review B. 97. DOI: 10.1103/Physrevb.97.121108 |
0.443 |
|
| 2018 |
Chen Y, Chen N, Chen B, Zhang Q, Li X, Deng Q, Zhang B, Zhang S, Zhang Z, Han X. Electrical properties and structural transition of Ge2Sb2Te5 adjusted by rare-earth element Gd for nonvolatile phase-change memory Journal of Applied Physics. 124: 145107. DOI: 10.1063/1.5040988 |
0.364 |
|
| 2018 |
Lei S, Shen H, Sun Y, Wan N, Yu H, Zhang S. Enhancing the ambient stability of few-layer black phosphorus by surface modification Rsc Advances. 8: 14676-14683. DOI: 10.1039/C8Ra00560E |
0.621 |
|
| 2018 |
Agiorgousis ML, Sun Y, West D, Zhang S. Intercalated Chevrel Phase Mo6S8 as a Janus Material for Energy Generation and Storage Acs Applied Energy Materials. 1: 440-446. DOI: 10.1021/Acsaem.7B00092 |
0.658 |
|
| 2018 |
Chen N, Li X, Wang X, Tian WQ, Zhang S, Sun H. Strong electron-polarized atom chain in amorphous phase-change memory Ge Sb Te alloy Acta Materialia. 143: 102-106. DOI: 10.1016/J.Actamat.2017.10.013 |
0.331 |
|
| 2018 |
Wang G, Xie W, Xu D, Ma H, Yang H, Lu H, Sun H, Li Y, Jia S, Fu L, Zhang S, Jia J. Formation mechanism of twin domain boundary in 2D materials: The case for WTe2 Nano Research. 12: 569-573. DOI: 10.1007/S12274-018-2255-X |
0.317 |
|
| 2018 |
Liu Q, Han N, Zhang S, Zhao J, Yang F, Bao X. Tuning the structures of two-dimensional cuprous oxide confined on Au(111) Nano Research. 11: 5957-5967. DOI: 10.1007/S12274-018-2109-6 |
0.346 |
|
| 2017 |
Wang J, Sui X, Shi W, Pan J, Zhang S, Liu F, Wei SH, Yan Q, Huang B. Prediction of Ideal Topological Semimetals with Triply Degenerate Points in the NaCu_{3}Te_{2} Family. Physical Review Letters. 119: 256402. PMID 29303319 DOI: 10.1103/Physrevlett.119.256402 |
0.338 |
|
| 2017 |
Chen NK, Han D, Li XB, Liu F, Bang J, Wang XP, Chen QD, Wang HY, Zhang S, Sun HB. Giant lattice expansion by quantum stress and universal atomic forces in semiconductors under instant ultrafast laser excitation. Physical Chemistry Chemical Physics : Pccp. PMID 28861554 DOI: 10.1039/C7Cp03103C |
0.698 |
|
| 2017 |
Wang Y, Sun X, Chen Z, Sun YY, Zhang S, Lu TM, Wertz E, Shi J. High-Temperature Ionic Epitaxy of Halide Perovskite Thin Film and the Hidden Carrier Dynamics. Advanced Materials (Deerfield Beach, Fla.). PMID 28719021 DOI: 10.1002/Adma.201702643 |
0.637 |
|
| 2017 |
Zhong C, Chen Y, Yu ZM, Xie Y, Wang H, Yang SA, Zhang S. Three-dimensional Pentagon Carbon with a genesis of emergent fermions. Nature Communications. 8: 15641. PMID 28580929 DOI: 10.1038/Ncomms15641 |
0.404 |
|
| 2017 |
Zhong C, Chen Y, Xie Y, Sun YY, Zhang S. Semi-Dirac semimetal in silicene oxide. Physical Chemistry Chemical Physics : Pccp. PMID 28102377 DOI: 10.1039/C6Cp08439G |
0.655 |
|
| 2017 |
Gao N, Yang L, Gao F, Kurtz R, West D, Zhang S. Long-time atomistic dynamics through a new self-adaptive accelerated molecular dynamics method. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 28059774 DOI: 10.1088/1361-648X/Aa574B |
0.641 |
|
| 2017 |
Xie W, Lu T, Wang G, Bhat I, Zhang S. Enhanced van der Waals epitaxy via electron transfer-enabled interfacial dative bond formation Physical Review Materials. 1. DOI: 10.1103/Physrevmaterials.1.063402 |
0.362 |
|
| 2017 |
Wang D, Han D, Li X, Chen N, West D, Meunier V, Zhang S, Sun H. Charged defects in two-dimensional semiconductors of arbitrary thickness and geometry: Formulation and application to few-layer black phosphorus Physical Review B. 96. DOI: 10.1103/Physrevb.96.155424 |
0.644 |
|
| 2017 |
Gross N, Sun Y, Perera S, Hui H, Wei X, Zhang S, Zeng H, Weinstein B. Stability and Band-Gap Tuning of the Chalcogenide Perovskite
BaZrS3
in Raman and Optical Investigations at High Pressures Physical Review Applied. 8. DOI: 10.1103/Physrevapplied.8.044014 |
0.647 |
|
| 2017 |
Agiorgousis ML, Sun Y, Zhang S. The Role of Ionic Liquid Electrolyte in an Aluminum–Graphite Electrochemical Cell Acs Energy Letters. 2: 689-693. DOI: 10.1021/Acsenergylett.7B00110 |
0.616 |
|
| 2017 |
Li W, Ma Y, Yang S, Gong J, Zhang S, Xiao X. Nanoscopic study of the compositions, structures, and electronic properties of grain boundaries in Cu(InGa)Se2 photovoltaic thin films Nano Energy. 33: 157-167. DOI: 10.1016/J.Nanoen.2017.01.041 |
0.321 |
|
| 2017 |
Wang F, Li F, Zhang L, Zeng H, Sun Y, Zhang S, Xu X. S-TiO 2 with enhanced visible-light photocatalytic activity derived from TiS 2 in deionized water Materials Research Bulletin. 87: 20-26. DOI: 10.1016/J.Materresbull.2016.11.014 |
0.622 |
|
| 2017 |
Palakawong N, Sun Y, T-Thienprasert J, Zhang S, Limpijumnong S. Ga acceptor defects in SnO2 revisited: A hybrid functional study Ceramics International. 43. DOI: 10.1016/J.Ceramint.2017.05.235 |
0.352 |
|
| 2017 |
Lu C, Yang H, Xu J, Xu L, Chshiev M, Zhang S, Gu C. Spontaneous formation of graphene on diamond (111) driven by B-doping induced surface reconstruction Carbon. 115: 388-393. DOI: 10.1016/J.Carbon.2017.01.030 |
0.345 |
|
| 2017 |
Wang X, Li X, Chen N, Chen Q, Han X, Zhang S, Sun H. Element-specific amorphization of vacancy-ordered GeSbTe for ternary-state phase change memory Acta Materialia. 136: 242-248. DOI: 10.1016/J.Actamat.2017.07.006 |
0.306 |
|
| 2016 |
Cheng S, Lu J, Han D, Liu M, Lu X, Ma C, Zhang S, Chen C. Manipulation of Optical Transmittance by Ordered-Oxygen-Vacancy in Epitaxial LaBaCo2O5.5+δ Thin Films. Scientific Reports. 6: 37496. PMID 27876830 DOI: 10.1038/Srep37496 |
0.334 |
|
| 2016 |
Ma C, Han D, Liu M, Collins G, Wang H, Xu X, Lin Y, Jiang J, Zhang S, Chen C. Anisotropic Strain Induced Directional Metallicity in Highly Epitaxial LaBaCo2O5.5+δ Thin Films on (110) NdGaO3. Scientific Reports. 6: 37337. PMID 27869137 DOI: 10.1038/Srep37337 |
0.335 |
|
| 2016 |
Wang Y, Seewald L, Sun YY, Keblinski P, Sun X, Zhang S, Lu TM, Johnson JM, Hwang J, Shi J. Nonlinear Electron-Lattice Interactions in a Wurtzite Semiconductor Enabled via Strongly Correlated Oxide. Advanced Materials (Deerfield Beach, Fla.). PMID 27572096 DOI: 10.1002/Adma.201602178 |
0.645 |
|
| 2016 |
Han D, Bang J, Xie W, Meunier V, Zhang S. Phonon-enabled Carrier Transport of Localized States at Non-polar Semiconductor Surfaces: A First-principles Based Prediction. The Journal of Physical Chemistry Letters. PMID 27552528 DOI: 10.1021/Acs.Jpclett.6B01608 |
0.705 |
|
| 2016 |
Sun YY, Zhang S. Communication: Effect of accidental mode degeneracy on Raman intensity in 2D materials: Hybrid functional study of bilayer phosphorene. The Journal of Chemical Physics. 145: 021102. PMID 27421389 DOI: 10.1063/1.4958460 |
0.619 |
|
| 2016 |
Gao Y, Chen Y, Zhong C, Zhang Z, Xie Y, Zhang S. Electron and phonon properties and gas storage in carbon honeycombs. Nanoscale. PMID 27315245 DOI: 10.1039/C6Nr03655D |
0.319 |
|
| 2016 |
Wang H, Bang J, Sun Y, Liang L, West D, Meunier V, Zhang S. The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures. Nature Communications. 7: 11504. PMID 27160484 DOI: 10.1038/Ncomms11504 |
0.78 |
|
| 2016 |
Lei SY, Wang H, Huang L, Sun YY, Zhang S. Stacking fault enriching the electronic and transport properties of few-layer phosphorenes and black phosphorus. Nano Letters. PMID 26799596 DOI: 10.1021/Acs.Nanolett.5B04719 |
0.683 |
|
| 2016 |
Sun YY, Zhang S. Kinetics stabilized doping: computational optimization of carbon-doped anatase TiO2 for visible-light driven water splitting. Physical Chemistry Chemical Physics : Pccp. PMID 26725589 DOI: 10.1039/C5Cp07109G |
0.645 |
|
| 2016 |
Wang N, Sun Y, Zhang Y, West D, Duan W, Zhang S. Stability investigations on the non-vdW-exfoliated surfaces of the topological insulator Bi2Te3: A first-principles study Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.115306 |
0.768 |
|
| 2016 |
Gao W, Gao X, Abtew TA, Sun YY, Zhang S, Zhang P. Quasiparticle band gap of organic-inorganic hybrid perovskites: Crystal structure, spin-orbit coupling, and self-energy effects Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.085202 |
0.667 |
|
| 2016 |
Zhang J, Xie W, Zhao J, Zhang S. Band alignment of two-dimensional lateral heterostructures 2d Materials. 4: 015038. DOI: 10.1088/2053-1583/Aa50Cc |
0.342 |
|
| 2016 |
Li F, Zhang Q, Tang C, Liu C, Shi J, Nie CN, Zhou G, Li Z, Zhang W, Song CL, He K, Ji S, Zhang S, Gu L, Wang L, et al. Atomically resolved FeSe/SrTiO3(001) interface structure by scanning transmission electron microscopy 2d Materials. 3. DOI: 10.1088/2053-1583/3/2/024002 |
0.371 |
|
| 2016 |
Wang D, Han D, Li X, Xie S, Chen N, Tian WQ, Zhang S, Sun H. Possible n/p-type conductivity of two-dimensional graphene oxide by boron and nitrogen doping: Evaluated via constrained excitation Applied Physics Letters. 109: 203113. DOI: 10.1063/1.4967981 |
0.356 |
|
| 2016 |
Gu C, Li W, Xu J, Xu S, Lu C, Xu L, Li J, Zhang S. Graphene grown out of diamond Applied Physics Letters. 109: 162105. DOI: 10.1063/1.4964710 |
0.333 |
|
| 2016 |
Mohanty D, Xie W, Wang Y, Lu Z, Shi J, Zhang S, Wang GC, Lu TM, Bhat IB. Van der Waals epitaxy of CdTe thin film on graphene Applied Physics Letters. 109. DOI: 10.1063/1.4964127 |
0.328 |
|
| 2016 |
Zhang B, Zhang W, Shen Z, Chen Y, Li J, Zhang S, Zhang Z, Wuttig M, Mazzarello R, Ma E, Han X. Element-resolved atomic structure imaging of rocksalt Ge2Sb2Te5 phase-change material Applied Physics Letters. 108. DOI: 10.1063/1.4949011 |
0.369 |
|
| 2016 |
Wang Y, Sun YY, Zhang S, Lu TM, Shi J. Band gap engineering of a soft inorganic compound PbI2 by incommensurate van der Waals epitaxy Applied Physics Letters. 108. DOI: 10.1063/1.4939269 |
0.642 |
|
| 2016 |
Zheng Z, Sun Y, Xie W, Zhao J, Zhang S. Solvent-Based Atomistic Theory for Doping Colloidal-Synthesized Quantum Dots via Cation Exchange The Journal of Physical Chemistry C. 120: 27085-27090. DOI: 10.1021/Acs.Jpcc.6B11150 |
0.656 |
|
| 2016 |
Zhang J, Xie W, Xu X, Zhang S, Zhao J. Structural and Electronic Properties of Interfaces in Graphene and Hexagonal Boron Nitride Lateral Heterostructures Chemistry of Materials. 28: 5022-5028. DOI: 10.1021/Acs.Chemmater.6B01764 |
0.432 |
|
| 2016 |
Xie W, Lucking M, Chen L, Bhat I, Wang GC, Lu TM, Zhang S. Modular Approach for Metal-Semiconductor Heterostructures with Very Large Interface Lattice Misfit: A First-Principles Perspective Crystal Growth and Design. 16: 2328-2334. DOI: 10.1021/Acs.Cgd.6B00118 |
0.346 |
|
| 2016 |
Gao W, Abtew TA, Cai T, Sun YY, Zhang S, Zhang P. On the applicability of hybrid functionals for predicting fundamental properties of metals Solid State Communications. 234: 10-13. DOI: 10.1016/J.Ssc.2016.02.014 |
0.644 |
|
| 2016 |
Perera S, Hui H, Zhao C, Xue H, Sun F, Deng C, Gross N, Milleville C, Xu X, Watson DF, Weinstein B, Sun YY, Zhang S, Zeng H. Chalcogenide perovskites - an emerging class of ionic semiconductors Nano Energy. 22: 129-135. DOI: 10.1016/J.Nanoen.2016.02.020 |
0.668 |
|
| 2016 |
Zhong C, Xie Y, Chen Y, Zhang S. Coexistence of flat bands and Dirac bands in a carbon-Kagome-lattice family Carbon. 99: 65-70. DOI: 10.1016/J.Carbon.2015.11.073 |
0.362 |
|
| 2015 |
Chen YP, Xie Y, Yang SA, Pan H, Zhang F, Cohen ML, Zhang S. Nanostructured carbon allotropes with Weyl-like loops and points. Nano Letters. PMID 26426355 DOI: 10.1021/Acs.Nanolett.5B02978 |
0.506 |
|
| 2015 |
Sun YY, Shi J, Lian J, Gao W, Agiorgousis ML, Zhang P, Zhang S. Discovering lead-free perovskite solar materials with a split-anion approach. Nanoscale. PMID 26349623 DOI: 10.1039/C5Nr04310G |
0.629 |
|
| 2015 |
Liu W, West D, He L, Xu Y, Liu J, Wang K, Wang Y, van der Laan G, Zhang R, Zhang S, Wang KL. Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators. Acs Nano. PMID 26348798 DOI: 10.1021/Acsnano.5B03980 |
0.646 |
|
| 2015 |
Wang F, Sun YY, Hatch JB, Xing H, Zhu X, Zhang H, Xu X, Luo H, Perera S, Zhang S, Zeng H. Realizing chemical codoping in TiO2. Physical Chemistry Chemical Physics : Pccp. 17: 17989-94. PMID 26096158 DOI: 10.1039/C5Cp02020D |
0.656 |
|
| 2015 |
Lucking M, Sun YY, West D, Zhang S. A nucleus-coupled electron transfer mechanism for TiO2-catalyzed water splitting. Physical Chemistry Chemical Physics : Pccp. 17: 16779-83. PMID 26050615 DOI: 10.1039/C5Cp01202C |
0.76 |
|
| 2015 |
Jiang Y, Zhang X, Wang Y, Wang N, West D, Zhang S, Zhang Z. Vertical/Planar Growth and Surface Orientation of Bi2Te3 and Bi2Se3 Topological Insulator Nanoplates. Nano Letters. 15: 3147-52. PMID 25919088 DOI: 10.1021/Acs.Nanolett.5B00240 |
0.629 |
|
| 2015 |
Sun YY, Agiorgousis ML, Zhang P, Zhang S. Chalcogenide perovskites for photovoltaics. Nano Letters. 15: 581-5. PMID 25548882 DOI: 10.1021/Nl504046X |
0.631 |
|
| 2015 |
Xie SY, Li XB, Tian WQ, Chen NK, Wang Y, Zhang S, Sun HB. A novel two-dimensional MgB6 crystal: metal-layer stabilized boron kagome lattice. Physical Chemistry Chemical Physics : Pccp. 17: 1093-8. PMID 25414074 DOI: 10.1039/C4Cp03728F |
0.368 |
|
| 2015 |
Bang J, Sun YY, West D, Meyer BK, Zhang S. Molecular doping of ZnO by ammonia: A possible shallow acceptor Journal of Materials Chemistry C. 3: 339-344. DOI: 10.1039/C4Tc02209B |
0.783 |
|
| 2015 |
Lucking MC, Bang J, Terrones H, Sun YY, Zhang S. Multivalency-induced band gap opening at MoS2 edges Chemistry of Materials. 27: 3326-3331. DOI: 10.1021/Acs.Chemmater.5B00398 |
0.787 |
|
| 2015 |
Li F, Jiang X, Zhao J, Zhang S. Graphene oxide: A promising nanomaterial for energy and environmental applications Nano Energy. 16: 488-515. DOI: 10.1016/J.Nanoen.2015.07.014 |
0.329 |
|
| 2015 |
Chen NK, Li XB, Wang XP, Xia MJ, Xie SY, Wang HY, Song Z, Zhang S, Sun HB. Origin of high thermal stability of amorphous Ge1Cu2Te3 alloy: A significant Cu-bonding reconfiguration modulated by Te lone-pair electrons for crystallization Acta Materialia. 90: 88-93. DOI: 10.1016/J.Actamat.2015.02.015 |
0.354 |
|
| 2015 |
Su PY, Dahal R, Wang GC, Zhang S, Lu TM, Bhat IB. Single-Crystal CdTe Homojunction Structures for Solar Cell Applications Journal of Electronic Materials. DOI: 10.1007/S11664-015-3829-Y |
0.306 |
|
| 2014 |
Agiorgousis ML, Sun YY, Zeng H, Zhang S. Strong covalency-induced recombination centers in perovskite solar cell material CH3NH3PbI3. Journal of the American Chemical Society. 136: 14570-5. PMID 25243595 DOI: 10.1021/Ja5079305 |
0.674 |
|
| 2014 |
Fang L, Iyer RG, Tan G, West DJ, Zhang S, Kanatzidis MG. The new phase [Tl₄Sb₆Se₁₀][Sn₅Sb₂Se₁₄]: a naturally formed semiconducting heterostructure with two-dimensional conductance. Journal of the American Chemical Society. 136: 11079-84. PMID 25058471 DOI: 10.1021/Ja505301Y |
0.686 |
|
| 2014 |
Xie SY, Li XB, Tian WQ, Chen NK, Zhang XL, Wang Y, Zhang S, Sun HB. First-principles calculations of a robust two-dimensional boron honeycomb sandwiching a triangular molybdenum layer Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.035447 |
0.387 |
|
| 2014 |
Mann C, West D, Miotkowski I, Chen YP, Zhang S, Shih C. Observation of Coulomb repulsion between Cu intercalants inCuxBi2Se3 Physical Review B. 89. DOI: 10.1103/Physrevb.89.155312 |
0.61 |
|
| 2014 |
Bang J, Kim Y, Park CH, Gao F, Zhang SB. Understanding the presence of vacancy clusters in ZnO from a kinetic perspective Applied Physics Letters. 104: 252101. DOI: 10.1063/1.4884653 |
0.655 |
|
| 2014 |
Lucking M, Sun Y, West D, Zhang S. Absolute redox potential of liquid water: a first-principles theory Chemical Science. 5: 1216-1220. DOI: 10.1039/C3Sc52287C |
0.741 |
|
| 2014 |
Liu X, Sun YY, West D, Gao X, Zhang SB. Modulation of the Band Gap Increase in Nanocrystals by Surface Passivation The Journal of Physical Chemistry C. 118: 14026-14030. DOI: 10.1021/Jp503701K |
0.655 |
|
| 2014 |
Jiang Y, Wang Y, Zhang YY, Zhang Z, Yuan W, Sun C, Wei X, Brodsky CN, Tsung CK, Li J, Zhang X, Mao SX, Zhang S. Direct observation of Pt nanocrystal coalescence induced by electron-excitation-enhanced van der Waals interactions Nano Research. 7: 308-314. DOI: 10.1007/S12274-013-0396-5 |
0.583 |
|
| 2013 |
Li L, Wang Y, Xie S, Li XB, Wang YQ, Wu R, Sun H, Zhang S, Gao HJ. Two-dimensional transition metal honeycomb realized: Hf on Ir(111). Nano Letters. 13: 4671-4. PMID 24016148 DOI: 10.1021/Nl4019287 |
0.547 |
|
| 2013 |
Wang Z, Gu M, Zhou Y, Zu X, Connell JG, Xiao J, Perea D, Lauhon LJ, Bang J, Zhang S, Wang C, Gao F. Electron-rich driven electrochemical solid-state amorphization in Li-Si alloys. Nano Letters. 13: 4511-6. PMID 23944904 DOI: 10.1021/Nl402429A |
0.7 |
|
| 2013 |
Mann C, West D, Miotkowski I, Chen YP, Zhang S, Shih CK. Mapping the 3D surface potential in Bi₂Se₃. Nature Communications. 4: 2277. PMID 23912773 DOI: 10.1038/Ncomms3277 |
0.663 |
|
| 2013 |
Jiang Y, Wang Y, Sagendorf J, West D, Kou X, Wei X, He L, Wang KL, Zhang S, Zhang Z. Direct atom-by-atom chemical identification of nanostructures and defects of topological insulators. Nano Letters. 13: 2851-6. PMID 23713705 DOI: 10.1021/Nl401186D |
0.69 |
|
| 2013 |
Bang J, Meng S, Sun YY, West D, Wang Z, Gao F, Zhang SB. Regulating energy transfer of excited carriers and the case for excitation-induced hydrogen dissociation on hydrogenated graphene. Proceedings of the National Academy of Sciences of the United States of America. 110: 908-11. PMID 23277576 DOI: 10.1073/Pnas.1210313110 |
0.788 |
|
| 2013 |
Northrup JE, Xie W, Sun Y, Zhang S. Electronic Structure and Mobility of Alkylated and Nonalkylated Organic Semiconductors: Role of van der Waals Interactions Applied Physics Express. 6: 71601. DOI: 10.7567/Apex.6.071601 |
0.62 |
|
| 2013 |
Bang J, Li Z, Sun YY, Samanta A, Zhang YY, Zhang W, Wang L, Chen X, Ma X, Xue Q, Zhang SB. Atomic and electronic structures of single-layer FeSe on SrTiO3(001): The role of oxygen deficiency Physical Review B. 87. DOI: 10.1103/Physrevb.87.220503 |
0.74 |
|
| 2013 |
Bang J, Wang Z, Gao F, Meng S, Zhang SB. Suppression of nonradiative recombination in ionic insulators by defects: Role of fast electron trapping in Tl-doped CsI Physical Review B. 87. DOI: 10.1103/Physrevb.87.205206 |
0.729 |
|
| 2013 |
Xie W, Bang J, Zhang S. Microscopic Origin for Electrically Benign Small-angle Grain Boundaries in Low-cost Semiconductors Materials Research Letters. 2: 51-56. DOI: 10.1080/21663831.2013.859639 |
0.654 |
|
| 2013 |
Xie W, West DJ, Sun Y, Zhang S. Role of nano in catalysis: Palladium catalyzed hydrogen desorption from nanosized magnesium hydride Nano Energy. 2: 742-748. DOI: 10.1016/J.Nanoen.2012.12.010 |
0.601 |
|
| 2013 |
Gao X, Wei Z, Meunier V, Sun Y, Zhang SB. Opening a large band gap for graphene by covalent addition Chemical Physics Letters. 555: 1-6. DOI: 10.1016/J.Cplett.2012.10.069 |
0.606 |
|
| 2012 |
Wang Z, Zhou Y, Bang J, Prange M, Zhang S, Gao F. Modification of Defect Structures in Graphene by Electron Irradiation: Ab Initio Molecular Dynamics Simulations The Journal of Physical Chemistry C. 116: 16070-16079. DOI: 10.1021/Jp303905U |
0.715 |
|
| 2012 |
Zheng Z, Zhao J, Sun Y, Zhang S. Structures and lattice energies of molecular crystals using density functional theory: Assessment of a local atomic potential approach Chemical Physics Letters. 550: 94-98. DOI: 10.1016/J.Cplett.2012.09.017 |
0.631 |
|
| 2011 |
Wang L, Zhao J, Sun YY, Zhang SB. Characteristics of Raman spectra for graphene oxide from ab initio simulations. The Journal of Chemical Physics. 135: 184503. PMID 22088071 DOI: 10.1063/1.3658859 |
0.605 |
|
| 2011 |
Wang L, Zhao J, Wang L, Yan T, Sun YY, Zhang SB. Titanium-decorated graphene oxide for carbon monoxide capture and separation. Physical Chemistry Chemical Physics : Pccp. 13: 21126-31. PMID 22025026 DOI: 10.1039/C1Cp21778J |
0.587 |
|
| 2011 |
Wang G, Zhu XG, Sun YY, Li YY, Zhang T, Wen J, Chen X, He K, Wang LL, Ma XC, Jia JF, Zhang SB, Xue QK. Topological insulator thin films of Bi2Te3 with controlled electronic structure. Advanced Materials (Deerfield Beach, Fla.). 23: 2929-32. PMID 21544877 DOI: 10.1002/Adma.201100678 |
0.61 |
|
| 2010 |
Lu T, Li H, Gaire C, LiCausi N, Chan TL, Bhat I, Zhang S, Wang GC. Quasi-single Crystal Semiconductors on Glass Substrates Through Biaxially Oriented Buffer Layers Mrs Proceedings. 1268. DOI: 10.1557/Proc-1268-Ee03-06 |
0.325 |
|
| 2009 |
Wang L, Lee K, Sun YY, Lucking M, Chen Z, Zhao JJ, Zhang SB. Graphene oxide as an ideal substrate for hydrogen storage. Acs Nano. 3: 2995-3000. PMID 19856979 DOI: 10.1021/Nn900667S |
0.592 |
|
| 2008 |
Li Y, Zhou Z, Zhang S, Chen Z. MoS2 nanoribbons: high stability and unusual electronic and magnetic properties. Journal of the American Chemical Society. 130: 16739-44. PMID 19554733 DOI: 10.1021/Ja805545X |
0.384 |
|
| 2008 |
Du MH, Zhang SB, Northrup JE, Erwin SC. Stabilization mechanisms of polar surfaces: ZnO surfaces Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.155424 |
0.31 |
|
| 2008 |
Whitney E, Dillon AC, Curtis C, Engtrakul C, O'Neill K, Davis M, Simpson L, Jones K, Zhao Y, Kim YH, Zhang S, Parilla P. Novel organometallic fullerene complexes for vehicular hydrogen storage Materials Research Society Symposium Proceedings. 1041: 107-116. DOI: 10.1002/Pssb.200776157 |
0.309 |
|
| 2000 |
Wei S, Zhang S, Zunger A. Band Structure and Stability of Ternary Semiconductor Polytypes Japanese Journal of Applied Physics. 39: 237. DOI: 10.7567/Jjaps.39S1.237 |
0.324 |
|
| 1990 |
García A, Cohen ML, Zhang SB. Theoretical Study of a new Transition Sequence in III-V Compounds: High-Pressure Phases of InSb Mrs Proceedings. 193. DOI: 10.1557/Proc-193-89 |
0.354 |
|
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